JPH0722128B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH0722128B2 JPH0722128B2 JP16883785A JP16883785A JPH0722128B2 JP H0722128 B2 JPH0722128 B2 JP H0722128B2 JP 16883785 A JP16883785 A JP 16883785A JP 16883785 A JP16883785 A JP 16883785A JP H0722128 B2 JPH0722128 B2 JP H0722128B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- wafer
- pattern
- laser
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔概要〕 直接描画による堆積（deposition）またはエッチング
を、レーザと液晶遮蔽板を用いて行う方法である。DETAILED DESCRIPTION OF THE INVENTION [Outline] This is a method of performing deposition or etching by direct writing using a laser and a liquid crystal shielding plate.
本発明は半導体装置の製造方法に関するもので、更に詳
しく言えばレーザと液晶遮蔽板を用いて配線パターンま
たは絶縁膜のパターンを形成する方法に関するものであ
る。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a wiring pattern or an insulating film pattern using a laser and a liquid crystal shield plate.
第３図を参照して多結晶シリコン（ポリシリコン）配線
を絶縁膜上に形成する方法を説明すると、先ず同図
（ａ）に示される如く基板31（例えばシリコンウエハ）
上に二酸化シリコン（SiO2）の絶縁膜32を作り、その上
にポリシリコンを例えば化学気相成長（CVD）法で堆積
し、ポリシリコン膜33を形成する。A method of forming polycrystalline silicon (polysilicon) wiring on an insulating film will be described with reference to FIG. 3. First, as shown in FIG. 3A, a substrate 31 (eg, silicon wafer) is formed.
An insulating film 32 of silicon dioxide (SiO 2 ) is formed on top, and polysilicon is deposited thereon by, for example, a chemical vapor deposition (CVD) method to form a polysilicon film 33.
次いで同図（ｂ）に示される如くポリシリコン膜33上に
ホトレジスト（以下レジストという）を塗布してレジス
ト膜34を形成する。Next, as shown in FIG. 3B, a photoresist (hereinafter referred to as a resist) is applied on the polysilicon film 33 to form a resist film 34.
次に同図（ｃ）に示される如く、別途作成された所定の
パターンをもつマスク35を通し紫外線36をレジスト膜34
に照射し、レジストを現像して得られるレジストパター
ンをマスクにしてポリシリコンをエッチングし、レジス
トを除去すると、同図（ｄ）に模式的に示されるポリシ
リコン配線37のパターンが作られる。Next, as shown in FIG. 3C, ultraviolet rays 36 are passed through a mask 35 having a predetermined pattern, which is prepared separately, and ultraviolet rays 36 are applied to the resist film 34.
Then, the polysilicon is etched by using the resist pattern obtained by developing the resist as a mask and the resist is removed to form the pattern of the polysilicon wiring 37 schematically shown in FIG.
他方、マスク35の製造方法を第４図を参照して説明す
る。On the other hand, a method of manufacturing the mask 35 will be described with reference to FIG.
先ず、ガラス基板41上にクロム（Cr）を例えば蒸着で被
着してクロム膜42を作る。First, chromium (Cr) is deposited on the glass substrate 41 by, for example, vapor deposition to form a chromium film 42.
次いで同図（ｂ）に示される如くクロム膜の上にレジス
トを塗布してレジスト膜43を作る。Next, a resist is applied on the chromium film to form a resist film 43 as shown in FIG.
次に、別途作成されたマスクデータを用いコンピュータ
で制御された電子ビーム（EBビーム）44でレジストを露
光する（同図（ｃ））。Next, the resist is exposed by an electron beam (EB beam) 44 controlled by a computer using the mask data created separately ((c) in the same figure).
次いでレジストを現像して得られるレジストパターンを
マスクにしてクロムをエッチングすると、同図（ｄ）に
模式的に示されるクロムパターン45が得られる。Then, the chrome is etched by using the resist pattern obtained by developing the resist as a mask to obtain a chrome pattern 45 schematically shown in FIG.
上記はポリシリコン配線の形成工程であるが、それには
多くの工程とマスクが必要となる。Although the above is the process of forming the polysilicon wiring, many processes and masks are required for it.
本発明はこのような点に鑑みて創作されたもので、レー
ザおよび液晶遮蔽板を用い直接描画によってパターンの
形成をなす方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for forming a pattern by direct drawing using a laser and a liquid crystal shielding plate.
第１図は本発明実施例の断面図、第２図は第１図の液晶
遮蔽板の詳細を示す断面図である。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view showing details of the liquid crystal shielding plate of FIG.
第１図の装置を用いて試料例えばウエハ11上にアルミニ
ウム（Al）配線を形成するには、減圧チャンバ12内にウ
エハ11を配置し、チャンバ12内には所定の成長ガスとキ
ャリアガスを導入し、他方レーザ光13をマスクデータ記
憶装置20のマスクデータに対応して駆動される液晶遮蔽
板14を通してウエハ11に照射して前記装置20の記憶する
パターンのAl配線をウエハ11上に形成する。In order to form aluminum (Al) wiring on a sample such as a wafer 11 using the apparatus shown in FIG. 1, the wafer 11 is placed in a decompression chamber 12, and a predetermined growth gas and carrier gas are introduced into the chamber 12. On the other hand, the laser beam 13 is applied to the wafer 11 through the liquid crystal shielding plate 14 driven according to the mask data of the mask data storage device 20 to form the Al wiring of the pattern stored in the device 20 on the wafer 11. .
前記した成長ガスをトリメチルアルミニウムのガス、キ
ャリアガスを水素（H2）ガスとし、前者と後者の混合比
を1:3としてチャンバ内に導入すると、トリメチルアル
ミニウムがレーザ光を吸収し、光分解を起し、ウエハ上
の光の照射されたところにだけAlが成長し、光照射部は
所望のパターンを作成するマスクデータによって決定さ
れるので、所望のパターンのAl配線がウエハ上に形成さ
れる。When trimethylaluminum gas is used as the growth gas and hydrogen (H 2 ) gas is used as the carrier gas, and the mixture ratio of the former and the latter is 1: 3 and introduced into the chamber, trimethylaluminum absorbs laser light and photodecomposes. Al is grown only where the light is irradiated on the wafer, and the light irradiation portion is determined by the mask data for forming a desired pattern, so that the Al wiring of the desired pattern is formed on the wafer. .
以下、図面を参照して本発明の実施例を詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図に戻ると、ウエハ11はXYステージ15上に冷却部16
を介して置かれたホットチャック17上に配置され、チャ
ンバ12は0.5Torrの圧力に保たれ、トリメチルアルミニ
ウム:H2＝1:3の混合比のガスがチャンバ12内に供給さ
れ、チャンバ12にはレーザ光13の透過のための窓12aが
設けてある。Returning to FIG. 1, the wafer 11 is placed on the XY stage 15 and the cooling unit 16 is provided.
Placed on a hot chuck 17 placed through the chamber, the chamber 12 is kept at a pressure of 0.5 Torr, and a gas having a mixture ratio of trimethylaluminum: H 2 = 1: 3 is supplied into the chamber 12 and is supplied to the chamber 12. Is provided with a window 12a for transmitting the laser light 13.
エキシマレーザ18から出てくるレーザ光13は、液晶遮蔽
板14、レンズ19、窓12aを通してウエハ11を照射する。
レンズはレーザ光13（KrFレーザ、波長248nm）を1/100
に縮小する。ウエハ11上のレーザ光13が照射したところ
では、トリメチルアルミニウムの光分解によってAlが堆
積する。レーザ光13のウエハ上の照射領域はマスクデー
タ記憶装置20からの情報によって働くコンピュータ21に
よって制御される駆動手段22によって操作される液晶遮
蔽板14によって制御されるので、マスクデータ記憶装置
20の記憶する所望のパターンにAl配線がウエハ11上に形
成される。The laser light 13 emitted from the excimer laser 18 irradiates the wafer 11 through the liquid crystal shielding plate 14, the lens 19 and the window 12a.
The lens is 1/100 of laser light 13 (KrF laser, wavelength 248 nm)
Shrink to. Where laser light 13 is irradiated on the wafer 11, Al is deposited by photolysis of trimethylaluminum. Since the irradiation area of the laser beam 13 on the wafer is controlled by the liquid crystal shielding plate 14 operated by the driving means 22 controlled by the computer 21 which operates according to the information from the mask data storage device 20, the mask data storage device
Al wiring is formed on the wafer 11 in a desired pattern stored in 20.
液晶遮蔽板14は第２図に詳細に示される装置であり、透
明電極23、AC電源24、TN型液晶25、偏光板26からなる。
レーザ光13はエキシマレーザ18を出るとき図に矢印Ｉで
示す如く変更されており、AC電源24からTN型液晶25に加
えられる交流電界がOFFのときには偏光面は90゜回転す
るため（図に矢印IIで示す）偏光板26によりレーザ光は
遮断され、電界がONのときには液晶が配列変化をなし、
偏光面は変化しない（図に矢印Ｉで示す）ために光は偏
光板26を透過する。The liquid crystal shielding plate 14 is a device shown in detail in FIG. 2, and comprises a transparent electrode 23, an AC power source 24, a TN type liquid crystal 25, and a polarizing plate 26.
The laser beam 13 is changed as shown by an arrow I in the figure when it exits the excimer laser 18, and the polarization plane rotates 90 ° when the AC electric field applied from the AC power source 24 to the TN type liquid crystal 25 is OFF (see the figure. Laser light is blocked by the polarizing plate 26 (indicated by arrow II), and when the electric field is ON, the liquid crystal undergoes alignment change,
Since the plane of polarization does not change (indicated by arrow I in the figure), light passes through the polarizing plate 26.
以上はAl配線の形成について説明したが、ポリシリコン
配線はシランガスを用いて同様に形成され、またSiO2膜
の所望の部分に窓開けをなすときはHClガスのClを同様
に遊離させそれでSiO2と反応させ窓開けをなし、更には
シランとO2ガスを供給して所望の部分にSiO2膜を形成す
るなど、本発明の適用範囲は広範囲にわたる。Although the formation of the Al wiring has been described above, the polysilicon wiring is similarly formed by using the silane gas, and when a window is opened in a desired portion of the SiO 2 film, Cl of HCl gas is similarly liberated, and the SiO 2 is thus formed. The application range of the present invention is wide-ranging, such as reacting with 2 to form a window, and further supplying silane and O 2 gas to form a SiO 2 film at a desired portion.
以上述べてきたように、本発明によれば、従来の多数の
工程が１工程に短縮され、半導体装置製造の作業性が向
上する効果がある。As described above, according to the present invention, many conventional steps are shortened to one step, and the workability of manufacturing a semiconductor device is improved.
第１図は本発明実施例の断面図、 第２図は第１図の液晶遮蔽板の断面図、 第３図と第４図は従来例の断面図である。 第１図と第２図において、 11はウエハ、 12はチャンバ、 12aは窓、 13はレーザ光、 14は液晶遮蔽板、 15はXYステージ、 16は冷却部、 17はホットチャック、 18はエキシマレーザ、 19はレンズ、 20はマスクデータ記憶装置、 21はコンピュータ、 22は駆動手段、 23は透明電極、 24はAC電源、 25はTN型液晶、 26は偏光板である。 FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of the liquid crystal shielding plate of FIG. 1, and FIGS. 3 and 4 are sectional views of a conventional example. In FIGS. 1 and 2, 11 is a wafer, 12 is a chamber, 12a is a window, 13 is a laser beam, 14 is a liquid crystal shielding plate, 15 is an XY stage, 16 is a cooling unit, 17 is a hot chuck, and 18 is an excimer. A laser, 19 is a lens, 20 is a mask data storage device, 21 is a computer, 22 is a driving means, 23 is a transparent electrode, 24 is an AC power source, 25 is a TN type liquid crystal, and 26 is a polarizing plate.
Claims (1)
る条件のチャンバ（12）内に試料（11）を配置し、 前記試料（11）に対し、マスクデータ記憶装置（20）に
より作動する液晶遮蔽板（14）を通してレーザ光（13）
を照射し、 試料（11）に対しマスクデータ記憶装置（20）の記録す
るパターンを転写することを特徴とする半導体装置の製
造方法。1. A sample (11) is placed in a chamber (12) under the condition that a growth gas causes photodecomposition due to light absorption, and the sample (11) is operated by a mask data storage device (20). Laser light (13) through the liquid crystal shield (14)
And a pattern to be recorded by the mask data storage device (20) is transferred onto the sample (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16883785A JPH0722128B2 (en) | 1985-07-31 | 1985-07-31 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16883785A JPH0722128B2 (en) | 1985-07-31 | 1985-07-31 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6230332A JPS6230332A (en) | 1987-02-09 |
| JPH0722128B2 true JPH0722128B2 (en) | 1995-03-08 |
Family
ID=15875441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16883785A Expired - Lifetime JPH0722128B2 (en) | 1985-07-31 | 1985-07-31 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722128B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01157791A (en) * | 1987-12-15 | 1989-06-21 | Komatsu Ltd | Laser transfer processor |
-
1985
- 1985-07-31 JP JP16883785A patent/JPH0722128B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6230332A (en) | 1987-02-09 |
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