JPH07215733A - Cover glass for solid-state image pickup element - Google Patents

Cover glass for solid-state image pickup element

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Publication number
JPH07215733A
JPH07215733A JP6026010A JP2601094A JPH07215733A JP H07215733 A JPH07215733 A JP H07215733A JP 6026010 A JP6026010 A JP 6026010A JP 2601094 A JP2601094 A JP 2601094A JP H07215733 A JPH07215733 A JP H07215733A
Authority
JP
Japan
Prior art keywords
glass
solid
state image
cover glass
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6026010A
Other languages
Japanese (ja)
Other versions
JP3112053B2 (en
Inventor
Hiroki Nagai
裕樹 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP06026010A priority Critical patent/JP3112053B2/en
Publication of JPH07215733A publication Critical patent/JPH07215733A/en
Application granted granted Critical
Publication of JP3112053B2 publication Critical patent/JP3112053B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To provide an inexpensive cover glass for solid-state image pickup device small in radiant quantity of alpha-ray beta-ray, having excellent weather resistance and capable of sealing in an alumina package since the average coefficient of linear expansion is 60-75X10<-7>/ deg.C. CONSTITUTION:This cover glass has the composition of, by wt.%, 65.0-75.0% SiO2, 7.0-11.0% Al2O3, 8.0-12.0% B2O3, 3.1-6.9% Li2O does not practically contain K2O and each quantity of uranium (U) and thorium (Th) is <=50ppb.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、CCDと呼ばれる固体
撮像素子を収容するアルミナなどのセラミックパッケー
ジの窓ガラスとして使用される固体撮像素子用カバーガ
ラスに関し、特に固体撮像素子の機能低下を抑えること
が可能なカバーガラスに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cover glass for a solid-state image pickup element used as a window glass of a ceramic package such as alumina for accommodating a solid-state image pickup element called CCD, and particularly to suppressing the deterioration of the function of the solid-state image pickup element. The present invention relates to a cover glass that can be used.

【0002】[0002]

【従来の技術】従来より固体撮像装置の一種として、ア
ルミナなどのセラミックパッケージ内にCCDなどの固
体撮像素子を搭載し、窓ガラスとしての機能をもつカバ
ーガラスをセラミックパッケージの外表面に封着するこ
とによって、固体撮像素子を収納した電子部品が広く使
用されている。
2. Description of the Related Art Conventionally, as a kind of solid-state image pickup device, a solid-state image pickup device such as CCD is mounted in a ceramic package such as alumina, and a cover glass functioning as a window glass is sealed on the outer surface of the ceramic package. As a result, electronic components housing a solid-state image sensor are widely used.

【0003】固体撮像素子は、半導体ICと同様に、シ
リコンの基板上に微細な受光素子を多数集積したもので
あり、光信号を素子に取り込む必要があるため、固体撮
像装置のカバーガラスには、高い光透過特性を有し、固
体撮像素子の機能を損なわせないことが要求される。
Similar to a semiconductor IC, a solid-state image pickup element is an integration of a large number of fine light-receiving elements on a silicon substrate, and since it is necessary to take an optical signal into the element, the solid-state image pickup device has a cover glass. It is required that the solid-state image sensor has high light transmission characteristics and does not impair the function of the solid-state image sensor.

【0004】一般にこの種のカバーガラスの材質として
は、ホウケイ酸ガラスや無アルカリガラスが用いられて
いるが、これらのホウケイ酸ガラスや無アルカリガラス
は、α線放射量が大きく、しかもカバーガラスは、素子
に対面するように取り付けられるため、そこから放射さ
れるα線は、素子に対して大きな悪影響を与える。
Borosilicate glass and non-alkali glass are generally used as the material for this type of cover glass. However, these borosilicate glass and non-alkali glass have a large amount of α-ray radiation, and the cover glass is Since the device is mounted so as to face the device, the α rays emitted from the device have a great adverse effect on the device.

【0005】すなわちカバーガラスからα線が放射さ
れ、これが固体撮像素子に入射すると、α線のエネルギ
ーによって正孔・電子対が誘起され、これが原因となっ
て瞬間的に画像に輝点や白点を生じさせる、所謂ソフト
エラーと呼ばれる現象が発生する。
That is, when α rays are emitted from the cover glass and enter the solid-state image sensor, the energy of α rays induces a hole-electron pair, which causes a bright spot or a white spot in the image instantaneously. A phenomenon called a soft error occurs that causes

【0006】特に近年、単位面積当りの画素数の増大に
よる高精度化が進められるに従い、素子がますます微細
になり、そのためα線の影響が一層顕著に現れるように
なってきている。
In particular, in recent years, as the precision has been improved by increasing the number of pixels per unit area, the element has become finer and finer, and the influence of α rays has become more prominent.

【0007】上記の事情から、カバーガラスから発生す
るα線対策が各種試みられており、例えば特開平1−1
73639号公報には、カバーガラスとしてα線の放射
量の少ない高純度石英ガラスを使用することが提案さ
れ、また特開平3−74874号公報には、素子上に鉛
を含むシリケートガラス薄膜を形成することによってα
線を遮蔽することが提案されている。
Under the circumstances described above, various attempts have been made to prevent α rays generated from the cover glass, for example, Japanese Patent Laid-Open No. 1-1.
In Japanese Patent No. 73639, it is proposed to use high-purity quartz glass having a small amount of α-ray radiation as a cover glass, and in Japanese Patent Laid-Open No. 3-74887, a silicate glass thin film containing lead is formed on an element. By doing α
It has been proposed to shield the lines.

【0008】さらに特開平5−279074号公報に
は、α線の放射量が少ないホウケイ酸ガラスからなる固
体撮像素子用カバーガラスが提案されている。
Further, Japanese Unexamined Patent Publication (Kokai) No. 5-279074 proposes a cover glass for a solid-state image pickup device, which is made of borosilicate glass which emits a small amount of α rays.

【0009】[0009]

【発明が解決しようとする課題】特開平1−17363
9号公報では、カバーガラスとして高純度石英ガラスを
用い、セラミックパッケージの熱膨張係数を高純度石英
ガラスの熱膨張係数と、固体撮像素子の熱膨張係数の中
間の値にすることが提案されているが、高純度石英ガラ
スは、非常に高価であり、且つ、線膨張係数が、アルミ
ナセラミックの線膨張係数(約70×10-7/℃)に比
べてかなり大きいため、アルミナ以外の材料からなる特
殊なパッケージを使用する必要があり、固体撮像素子の
低コスト化が困難となる。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
No. 9, it is proposed that high-purity quartz glass is used as the cover glass, and the coefficient of thermal expansion of the ceramic package is set to an intermediate value between the coefficient of thermal expansion of the high-purity quartz glass and the coefficient of thermal expansion of the solid-state image sensor. However, high-purity quartz glass is very expensive, and its coefficient of linear expansion is considerably larger than that of alumina ceramics (about 70 × 10 −7 / ° C.). Therefore, it is difficult to reduce the cost of the solid-state image sensor.

【0010】また特開平3−74874号公報では、膜
付けのためのプロセスが必要となり、しかもα線を遮蔽
するためには、かなりの厚みをもつ膜が必要となるた
め、膜付け工程に長時間を要する。
Further, in Japanese Patent Laid-Open No. 3-74874, a film-forming process is required, and a film having a considerable thickness is required to shield α rays, so that the film-forming process is long. It takes time.

【0011】特開平5−279074号公報のカバーガ
ラスは、安価な材料から作製され、しかもウラン
(U)、トリウム(Th)などの放射性同位元素が少な
いため、α線の放射量が少ない。しかしながらこのガラ
スは、Al23 を5.0%以下しか含まないため、ガ
ラスの耐候性が悪いという欠点がある。すなわちガラス
の耐候性が悪いと、長期に亙って使用している間に、ガ
ラス表面からアルカリ金属やアルカリ土類金属の結晶が
析出し、透明性が損なわれるという問題が発生する。
The cover glass disclosed in Japanese Unexamined Patent Publication (Kokai) No. 5-279074 has a small amount of α-ray radiation because it is made of an inexpensive material and contains few radioactive isotopes such as uranium (U) and thorium (Th). However, since this glass contains Al 2 O 3 in an amount of 5.0% or less, it has a drawback that the weather resistance of the glass is poor. That is, when the weather resistance of glass is poor, crystals of alkali metal or alkaline earth metal are precipitated from the glass surface during long-term use, and the transparency is impaired.

【0012】さらにこのカバーガラスは、溶融を促進す
る目的でK2 Oを含有しているが、そのためβ線の放射
量が多くなる。β線は、α線に比べて透過性が強いた
め、撮像素子への影響は微弱ではあるが、これによって
も素子の機能が損なわれる可能性があり、この種のガラ
スは、できるだけβ線の放射量についても少ないことが
望ましい。β線の放射量を少なくするためには、ガラス
の構成成分としてβ崩壊する同位体を有するような成分
を避ける必要があるが、カリウムはこの成分に該当す
る。
Further, this cover glass contains K 2 O for the purpose of accelerating melting, and therefore the amount of β-ray radiation increases. β-rays have higher transparency than α-rays, so the influence on the image sensor is weak, but this may also impair the function of the element. It is also desirable that the radiation dose be low. In order to reduce the amount of β-ray radiation, it is necessary to avoid a component having a β-decaying isotope as a constituent of glass, but potassium falls under this component.

【0013】本発明は、安価で、α線及びβ線の放射量
が少なく、優れた耐候性を有し、しかも平均線膨張係数
が60〜75×10-7/℃であるため、アルミナパッケ
ージに封着可能な固体撮像素子用カバーガラスを提供す
ることを目的とするものである。
The present invention is inexpensive, has a small amount of α-ray and β-ray radiation, has excellent weather resistance, and has an average linear expansion coefficient of 60 to 75 × 10 -7 / ° C. It is an object of the present invention to provide a cover glass for a solid-state image sensor that can be sealed.

【0014】[0014]

【課題を解決するための手段】本発明の固体撮像素子用
カバーガラスは、重量百分率で、SiO2 65.0〜
75.0%、Al23 7.0〜11.0%、B2
3 8.0〜12.0%、Li2 O 3.1〜6.9
%、Na2 O 4.5〜7.5%の組成を有し、本質的
にK2 Oを含有せず、ガラス中に含有されるウラン
(U)、トリウム(Th)の量が、各々50ppb以下
であることを特徴とする。
The cover glass for a solid-state image pickup device according to the present invention has a weight percentage of SiO 2 of 65.0-.
75.0%, Al 2 O 3 7.0-11.0%, B 2 O
3 8.0~12.0%, Li 2 O 3.1~6.9
%, Na 2 O 4.5 to 7.5%, essentially no K 2 O, and the amounts of uranium (U) and thorium (Th) contained in the glass are respectively It is characterized by being 50 ppb or less.

【0015】また本発明の固体撮像素子用カバーガラス
は、好ましくは、重量百分率で、SiO2 67.0〜
73.0%、Al23 8.0〜10.0%、B2
3 9.0〜11.0%、Li2 O 3.1〜6.9%、
Na2 O 4.9〜6.9%の組成を有し、本質的にK
2 Oを含有しないすることを特徴とする。
The cover glass for a solid-state image pickup device of the present invention preferably has a weight percentage of SiO 2 of 67.0.
73.0%, Al 2 O 3 8.0 to 10.0%, B 2 O
3 9.0 to 11.0%, Li 2 O 3.1 to 6.9%,
Na 2 O having a composition of 4.9-6.9% and having essentially K
It is characterized by not containing 2 O.

【0016】[0016]

【作用】ガラスのα線発生の主因は、ガラスに不純物と
して含まれるUとThであり、これらの量を一定値以下
に抑えれば、α線の放射量を少なくすることが可能であ
り、具体的には、各々の量を50ppb以下にすればα
線による固体撮像素子のソフトエラーを防ぐことができ
る。
The main cause of α-ray generation of glass is U and Th contained as impurities in the glass, and if the amount of these is kept below a certain value, the amount of α-ray radiation can be reduced. Specifically, if each amount is 50 ppb or less, α
It is possible to prevent a soft error of the solid-state image sensor due to the lines.

【0017】以前よりUやThが、ジルコニア原料に多
く含まれていることは広く知られているが、バリウム原
料にもUやThが多く含まれている。従ってUとThの
量を各々50ppb以下にするためには、BaOを極力
含有しないようにし、例え含有させる場合でも原料とし
て高純度品を使用することが必要である。
It has been widely known that U and Th are contained in the zirconia raw material in a large amount, but the barium raw material also contains a large amount of U and Th. Therefore, in order to reduce the amounts of U and Th to 50 ppb or less, it is necessary to minimize the content of BaO and use a high-purity material as a raw material even when it is contained.

【0018】また本発明においては、バリウム以外に
も、他の全ての成分について原料を選定することが要求
され、さらに溶融時及び加工時のUやThの混入も極力
避けなければならない。
Further, in the present invention, it is required to select raw materials for all other components besides barium, and it is also necessary to avoid mixing U and Th during melting and processing as much as possible.

【0019】さらにカリウムの原料は、Kの放射性同位
元素40Kを有しており、これがβ線放射の原因となるた
め、K2 Oの含有も避ける必要がある。
Further, the raw material of potassium has a radioactive isotope of 40 K, which causes β-ray emission, and therefore it is necessary to avoid the inclusion of K 2 O.

【0020】本発明の固体撮像素子用カバーガラスは、
α線やβ線の放射量以外にも、耐候性、線膨張係数、製
造のしやすさを考慮した上で組成を決定しており、その
組成を上記のように限定した理由は、以下のとおりであ
る。
The cover glass for a solid-state image sensor of the present invention comprises
In addition to the radiation dose of α-rays and β-rays, the weather resistance, the coefficient of linear expansion, and the ease of manufacturing are taken into account when determining the composition. The reason for limiting the composition as described above is as follows. It is as follows.

【0021】まずSiO2 は、ガラスの耐候性を向上さ
せる作用を有するが、その含有量が65.0%以下にな
ると、このような作用が得られ難くなり、75.0%以
上になると、ガラスの溶融及び成形が困難となる。
First, SiO 2 has a function of improving the weather resistance of glass. If the content of SiO 2 is 65.0% or less, it becomes difficult to obtain such a function, and if it is 75.0% or more, Melting and shaping of glass becomes difficult.

【0022】Al23 もガラスの耐候性を向上させる
作用を有するが、その含有量が7.0%以下になると、
耐候性が悪くなって実用性に乏しくなり、11.0%以
上になると、ガラスの溶融が困難となる。
Al 2 O 3 also has an effect of improving the weather resistance of glass, but when the content thereof is 7.0% or less,
If the weather resistance is poor and the practicality is poor and the content is 11.0% or more, it becomes difficult to melt the glass.

【0023】B23 は、ガラスの溶融性と耐失透性を
向上させる作用を有するが、その含有量が8.0%以下
になると、成形温度の上昇に伴って作業性が悪くなり、
12.0%以上になると、ガラスの化学的耐久性が悪く
なる。
B 2 O 3 has the function of improving the melting property and devitrification resistance of the glass, but if its content is less than 8.0%, the workability becomes worse as the molding temperature rises. ,
If it is 12.0% or more, the chemical durability of glass deteriorates.

【0024】Li2 Oは、線膨張係数を調整すると共
に、ガラスの溶融性を向上する作用を有するが、その含
有量が3.1%以下になると、ガラスの溶融性が悪くな
ると共に、平均線膨張係数が60×10-7/℃以下にな
りやすく、一方、6.9%以上になると、耐候性が悪く
なると共に、ガラス溶融時のガラス表面からの蒸着が著
しくなり、脈理不良の原因となるため好ましくない。
Li 2 O has the effect of adjusting the linear expansion coefficient and improving the meltability of the glass, but if the content thereof is 3.1% or less, the meltability of the glass deteriorates and the average If the coefficient of linear expansion is less than 60 × 10 −7 / ° C., on the other hand, if it is more than 6.9%, the weather resistance deteriorates and vapor deposition from the glass surface during melting of the glass becomes remarkable, resulting in poor striae. It is not preferable because it causes the problem.

【0025】Na2 Oも、線膨張係数を調整すると共
に、ガラスの溶融性を向上する作用を有するが、その含
有量が4.5%以下になると、ガラスの溶融性が悪くな
ると共に、平均線膨張係数が60×10-7/℃以下にな
りやすく、一方、7.5%以上になると、耐水性が著し
く悪くなると共に平均線膨張係数が75×10-7/℃以
上になりやすい。
Na 2 O also has the effects of adjusting the linear expansion coefficient and improving the meltability of the glass, but if its content is less than 4.5%, the meltability of the glass deteriorates and the average When the linear expansion coefficient is 60 × 10 −7 / ° C. or less, on the other hand, when it is 7.5% or more, the water resistance is significantly deteriorated and the average linear expansion coefficient is easily 75 × 10 −7 / ° C. or more.

【0026】尚、本発明においては、上記の成分以外に
も、清澄剤として、As23 、Sb23 、塩化物、
コーンスターチ、カーボン、サッカロース、金属粉、弗
化物を含有させることが可能である。また弗化物あるい
は塩化物の添加により、ガラス中にF、Clを含有させ
ることも可能である。さらに膨張係数や粘度の微調整を
図るため、必要に応じてアルカリ土類元素であるMg、
Ca、Sr、Baを炭酸塩原料により添加することも可
能である。また必要に応じてガラスを着色するための添
加物として、遷移金属元素のイオンを炭酸塩等の塩とし
て微量添加することも可能である。
In the present invention, in addition to the above components, As 2 O 3 , Sb 2 O 3 , chloride,
It is possible to contain corn starch, carbon, sucrose, metal powder, and fluoride. Further, it is possible to add F or Cl to the glass by adding a fluoride or a chloride. Further, in order to finely adjust the expansion coefficient and the viscosity, the alkaline earth element Mg,
It is also possible to add Ca, Sr, and Ba by a carbonate raw material. It is also possible to add a trace amount of ions of a transition metal element as a salt such as a carbonate as an additive for coloring the glass, if necessary.

【0027】[0027]

【実施例】以下、本発明の固体撮像素子用カバーガラス
を実施例に基づき詳細に説明する。
EXAMPLES The cover glass for a solid-state image pickup device of the present invention will be described in detail below based on examples.

【0028】表1、2は、本発明の実施例(試料No.
1〜8)と、比較例(試料No.9〜13)のガラスを
示すものである。
Tables 1 and 2 show examples of the present invention (Sample No.
1 to 8) and comparative examples (sample Nos. 9 to 13).

【0029】[0029]

【表1】 [Table 1]

【0030】[0030]

【表2】 [Table 2]

【0031】表のNo.1〜13の各試料は、次のよう
にして調製した。
No. in the table. Each sample of 1 to 13 was prepared as follows.

【0032】まず表に示す組成のガラスとなるように調
合したガラス原料を白金ルツボに入れ、電気炉内で15
00℃、5時間の条件で溶融した後、この溶融ガラスを
グラファイト上に流し出し、次いで徐冷炉内で除歪し
た。
First, glass raw materials prepared to give a glass having the composition shown in the table are put in a platinum crucible and placed in an electric furnace for 15 minutes.
After melting under the conditions of 00 ° C. for 5 hours, the molten glass was poured onto graphite and then strained in a slow cooling furnace.

【0033】こうして作製した各試料について、不純物
量、α線とβ線の放射量、平均線膨張係数及びアルカリ
溶出量を測定し、その結果を表に示した。また各試料の
アルカリ溶出量を求めた後、高温高湿試験に供し、その
結果も表に示した。
The amount of impurities, the amount of α-ray and β-ray radiation, the average coefficient of linear expansion and the amount of alkali elution were measured for each of the samples thus prepared, and the results are shown in the table. Further, after determining the amount of alkali elution of each sample, the sample was subjected to a high temperature and high humidity test, and the results are also shown in the table.

【0034】表から明らかなように実施例であるNo.
1〜8の各試料は、不純物であるUとThの量が、各々
50ppb以下であるため、α線放射量が、0.009
C/cm2 ・hr.以下、β線放射量が、4×10-6μ
Ci/cm2 以下と少なかった。また平均線膨張係数
が、60.0〜70.0×10-7/℃とアルミナセラミ
ックのそれに近似しており、さらにアルカリ溶出量が、
0.06mg以下と少なく、高温高湿試験に供しても、
表面に異常は認められず、優れた耐候性を有していた。
As is apparent from the table, No.
In each of the samples 1 to 8, since the amounts of U and Th that are impurities are 50 ppb or less, the α-ray emission amount is 0.009.
C / cm 2 · hr. Below, the β-ray radiation dose is 4 × 10 -6 μ
It was as low as Ci / cm 2 or less. Moreover, the average linear expansion coefficient is 60.0 to 70.0 × 10 −7 / ° C., which is close to that of alumina ceramics, and the amount of alkali elution is
As little as 0.06 mg or less, even when subjected to a high temperature and high humidity test,
No abnormalities were observed on the surface and it had excellent weather resistance.

【0035】それに対して比較例であるNo.9の試料
は、不純物であるUの量が、200ppb、Thの量が
150ppbと多いため、α線の放射量が、0.06C
/cm2 ・hr.と多かった。またNo.10の試料
は、K2 Oを0.5%含有しているため、β線の放射量
が、6×10-6μCi/cm2 と多かった。さらにN
o.11の試料は、Li2 Oの含有量が3.0%と少な
いため、平均線膨張係数が58×10-7/℃と低かっ
た。またNo.12の試料は、Al23 の含有量が
5.0%と少ないため、アルカリ溶出量が0.12mg
と多く、高温高湿試験によって表面に結晶の析出が認め
られた。さらにNo.13の試料は、Na2 Oを7.6
%も含有するため、平均線膨張係数が77×10-7/℃
と高く、しかもアルカリ溶出量が0.15mgと多く、
高温高湿試験によって表面に結晶の析出が認められた。
On the other hand, No. The sample No. 9 had a large amount of U as an impurity of 200 ppb and a large amount of Th of 150 ppb.
/ Cm 2 · hr. There were many. In addition, No. Sample No. 10 contained 0.5% of K 2 O, and therefore had a large β-ray radiation amount of 6 × 10 −6 μCi / cm 2 . Furthermore N
o. Sample No. 11 had a low Li 2 O content of 3.0% and thus had a low average linear expansion coefficient of 58 × 10 −7 / ° C. In addition, No. The sample of No. 12 had a small Al 2 O 3 content of 5.0%, so the alkali elution amount was 0.12 mg.
Precipitation of crystals was observed on the surface by the high temperature and high humidity test. Furthermore, No. Sample No. 13 contained Na 2 O at 7.6
%, The average linear expansion coefficient is 77 × 10 -7 / ° C.
And the amount of alkali elution is as high as 0.15 mg,
Precipitation of crystals was recognized on the surface by the high temperature and high humidity test.

【0036】尚、表中の不純物であるUとThの量は、
ICP(誘導結合高周波プラズマ)分析によって求めた
ものである。またα線放射量とβ線放射量は、ガスフロ
ー比例計数管測定装置を用いて測定し、平均線膨張係数
は、石英管式膨張計を用いて、30〜380℃における
平均値を求めたものである。さらにアルカリ溶出量は、
JIS R3502の規定に基づいて求めたものであ
る。
The amounts of U and Th that are impurities in the table are
It is obtained by ICP (inductively coupled high frequency plasma) analysis. The α-ray radiation amount and β-ray radiation amount were measured using a gas flow proportional counter measuring device, and the average linear expansion coefficient was obtained by using a quartz tube type dilatometer at 30 to 380 ° C. It is a thing. Furthermore, the alkaline elution amount is
It is obtained based on the regulation of JIS R3502.

【0037】また高温高湿試験は、各試料をアルカリ溶
出試験に供した後、酸化セリウムによって鏡面ポリッシ
ュして、20×20×1mmの寸法の板状に加工し、次
いでこれを85℃−85%、500時間の条件下に放置
した後の表面状態を電子顕微鏡によって観察したもので
あり、表面に変化の認められなかったものを異常無と
し、アルカリ金属やアルカリ土類金属の結晶の析出が認
められたものを結晶析出とした。
In the high temperature and high humidity test, each sample was subjected to an alkali elution test, and then mirror-polished with cerium oxide to form a plate having a size of 20 × 20 × 1 mm, which was then heated at 85 ° C.-85 ° C. %, The state of the surface after being left under the condition of 500 hours was observed by an electron microscope. When no change was observed on the surface, it was regarded as normal and the precipitation of alkali metal or alkaline earth metal crystals was confirmed. What was recognized was defined as crystal precipitation.

【0038】[0038]

【発明の効果】以上のように本発明の固体撮像素子用カ
バーガラスは、α線及びβ線の放射量が少ないため、素
子にソフトエラーを発生させることがなく、優れた耐候
性を有し、しかも線膨張係数がアルミナセラミックのそ
れに近似しているため、アルミナパッケージに封着可能
である。
As described above, the cover glass for a solid-state image pickup device of the present invention has a small amount of α-ray and β-ray radiation, and therefore does not cause a soft error in the device and has excellent weather resistance. Moreover, since the coefficient of linear expansion is similar to that of alumina ceramic, it can be sealed in an alumina package.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 重量百分率で、SiO2 65.0〜7
5.0%、Al23 7.0〜11.0%、B23
8.0〜12.0%、Li2 O 3.1〜6.9%、
Na2 O 4.5〜7.5%の組成を有し、本質的にK
2 Oを含有せず、ガラス中に含有されるウラン(U)、
トリウム(Th)の量が、各々50ppb以下であるこ
とを特徴とする固体撮像素子用カバーガラス。
1. A weight percentage of SiO 2 65.0-7.
5.0%, Al 2 O 3 7.0-11.0%, B 2 O 3
8.0 to 12.0%, Li 2 O 3.1 to 6.9%,
Na 2 O 4.5-7.5% composition, essentially K
Uranium (U), which does not contain 2 O and is contained in glass,
A cover glass for a solid-state image pickup device, wherein the amount of thorium (Th) is 50 ppb or less, respectively.
【請求項2】 重量百分率で、SiO2 67.0〜7
3.0%、Al23 8.0〜10.0%、B23
9.0〜11.0%、Li2 O 3.1〜6.9%、
Na2 O 4.9〜6.9%の組成を有し、本質的にK
2 Oを含有しないことを特徴とする請求項1の固体撮像
素子用カバーガラス。
2. SiO 2 67.0 to 7 by weight percentage.
3.0%, Al 2 O 3 8.0 to 10.0%, B 2 O 3
9.0 to 11.0%, Li 2 O 3.1 to 6.9%,
Na 2 O having a composition of 4.9-6.9% and having essentially K
The cover glass for a solid-state image pickup device according to claim 1, which does not contain 2 O.
JP06026010A 1994-01-28 1994-01-28 Cover glass for solid-state imaging device Expired - Fee Related JP3112053B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06026010A JP3112053B2 (en) 1994-01-28 1994-01-28 Cover glass for solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06026010A JP3112053B2 (en) 1994-01-28 1994-01-28 Cover glass for solid-state imaging device

Publications (2)

Publication Number Publication Date
JPH07215733A true JPH07215733A (en) 1995-08-15
JP3112053B2 JP3112053B2 (en) 2000-11-27

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ID=12181736

Family Applications (1)

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Country Status (1)

Country Link
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