JPH07209610A - Resin sealed type solid-state image pickup element - Google Patents

Resin sealed type solid-state image pickup element

Info

Publication number
JPH07209610A
JPH07209610A JP6002177A JP217794A JPH07209610A JP H07209610 A JPH07209610 A JP H07209610A JP 6002177 A JP6002177 A JP 6002177A JP 217794 A JP217794 A JP 217794A JP H07209610 A JPH07209610 A JP H07209610A
Authority
JP
Japan
Prior art keywords
transparent resin
resin
diffraction grating
area sensor
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6002177A
Other languages
Japanese (ja)
Inventor
Tadashi Saito
正 斉藤
Toshimitsu Harada
敏満 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP6002177A priority Critical patent/JPH07209610A/en
Publication of JPH07209610A publication Critical patent/JPH07209610A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain the low-cost phase grating integrated type solid-state image pickup element which is suitable for mass-production by forming-phase type diffraction gratings which have optical low-pass effect on the surface of transparent resin covering the photodetection surface side of a CCD area sensor. CONSTITUTION:The CCD area sensor 2 is molded by having its entire peripheral surface sealed with the transparent resin, and image information of the CCD area sensor 2 is led out through a lead frame 3. The phase type diffraction gratings 1a which have the optical low-pass effect are provided on the top surface of the transparent resin 1 covering the photodetection surface 2a of the CCD area sensor 2. The diffraction gratings 1a are large enough to secure grating performance on the photodetection surface 2a of the CCD area sensor 2, and also formed at lower height for prevention against flaw. A light beam which is made incident through a photography optical system so that it is imaged on the photodetection surface 2a is separated by the phase type diffraction gratings 1a and reaches the photodetection surface 2a, thereby obtaining desired low-pass characteristics.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ビデオカメラや電子ス
チルカメラ等での撮像に用いられる固体撮像素子に係わ
り、特にモールド樹脂をもって撮像素子であるCCDエ
リアセンサを封止するようにした樹脂封止型固体撮像素
子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device used for image pickup in a video camera, an electronic still camera or the like, and in particular, a resin encapsulation for sealing a CCD area sensor which is an image pickup device with a mold resin. The present invention relates to a static solid-state image sensor.

【0002】[0002]

【従来の技術】一般にCCDエリアセンサ等の離散的画
素構造を有した固体撮像素子を用いたカメラでは、被写
体の画像情報を光学的に空間サンプリングして出力画像
を得ている。この場合、被写体の画像情報中にサンプリ
ング周波数以上の高空間周波数成分が含まれていると、
被写体が有していない偽色信号が多く発生して来る。こ
のため、従来より光学的ローパスフィルタを撮影系の一
部に配置して、被写体の高空間周波数成分を制限してい
る。
2. Description of the Related Art Generally, in a camera using a solid-state image pickup device having a discrete pixel structure such as a CCD area sensor, image information of a subject is optically spatially sampled to obtain an output image. In this case, if the image information of the subject contains high spatial frequency components higher than the sampling frequency,
Many false color signals that the subject does not have are generated. For this reason, conventionally, an optical low-pass filter is arranged in a part of the photographing system to limit the high spatial frequency component of the subject.

【0003】被写体の高空間周波数成分を制限する手段
として、撮影系の一部に光学的ローパスフィルタを配置
することがなされている。光学的ローパスフィルタとし
ては水晶板等の複屈折を利用した水晶フィルタが多く用
いられていた。しかし近年、水晶フィルタに代わる光学
的ローパスフィルタとして位相回折格子型の光学的ロー
パスフィルタが普及しつつある。しかし、位相回折格子
型の光学的ローパスフィルタは水晶フィルタに較べ安価
ではあるが、下記の問題点があった。
As a means for limiting the high spatial frequency components of a subject, an optical low pass filter is arranged in a part of the photographing system. As an optical low-pass filter, a crystal filter utilizing birefringence such as a crystal plate is often used. However, in recent years, a phase diffraction grating type optical low-pass filter is becoming popular as an optical low-pass filter which replaces the crystal filter. However, although the phase diffraction grating type optical low-pass filter is less expensive than the crystal filter, it has the following problems.

【0004】固体撮像素子を用いた撮影光学系に位相回
折格子を設ける場合には、図6(a),(b)に示すよ
うに、固体撮像素子であるCCD61と位相回折格子62と
の間に撮影光学系63を介在させるケース(a)と、介在
させないケース(b)とがある。
When a phase diffraction grating is provided in a photographic optical system using a solid-state image sensor, as shown in FIGS. 6A and 6B, a CCD 61 and a phase diffraction grating 62, which are solid-state image sensors, are provided. There are a case (a) in which the photographing optical system 63 is interposed and a case (b) in which the photographing optical system 63 is not interposed.

【0005】ケース(a)では固体撮像素子61が受光す
る影像に格子像は発生しないが、ケース(b)では位相
回折格子62とCCD61受光面の間隔により格子像が発生
してしまうという欠点がある。影像に格子像が発生しな
いためには、位相回折格子62の格子ピッチをCCD61の
画素ピッチのおよそ2倍以下にする必要があるが、この
場合、位相回折格子62とCCD61受光面との間隔はかな
り短かくなる。この間隔は格子の断面形状やローパスす
る周波数、CCDの種類によっても異なるが、一般的に
は0.1mm前後、0.2mm以下位となる。そのため位相回折格
子62とCCD61とを一体構造としない限りかかる間隔と
することはできない。
In case (a), a lattice image is not generated in the image received by the solid-state image pickup device 61, but in case (b), a lattice image is generated due to the distance between the phase diffraction grating 62 and the CCD 61 light receiving surface. is there. In order to prevent the generation of a grating image in the image, the grating pitch of the phase diffraction grating 62 needs to be about twice the pixel pitch of the CCD 61 or less. In this case, the distance between the phase diffraction grating 62 and the CCD 61 light receiving surface is It gets quite short. Although this distance varies depending on the cross-sectional shape of the grating, the low-pass frequency, and the type of CCD, it is generally around 0.1 mm and 0.2 mm or less. Therefore, unless the phase diffraction grating 62 and the CCD 61 are integrated with each other, it is not possible to set such an interval.

【0006】一方、ケース(a)ではCCD61と位相回
折格子62との間に撮影光学系63がはいるため、レンズ毎
に専用の位相専用格子を作製しなければならず、部品の
共通化という点で不利であり、特に例えばC・Csマウ
ントといった規格の汎用レンズを用いたカメラではケー
ス(a)のような構成とすることは困難で、撮影光学系
63の中に位相回折格子62を組み込むため、鏡胴の構造は
複雑となるという欠点がある。
On the other hand, in the case (a), since the photographing optical system 63 is provided between the CCD 61 and the phase diffraction grating 62, it is necessary to manufacture a dedicated phase dedicated grating for each lens, which means that parts are commonly used. It is disadvantageous in that it is difficult to construct the case (a) especially in a camera using a general-purpose lens of the standard such as C / Cs mount.
Since the phase diffraction grating 62 is incorporated in 63, there is a drawback that the structure of the lens barrel becomes complicated.

【0007】[0007]

【発明が解決しようとする課題】上記の問題点を解決す
るために、例えば特開昭63-307423号公報などのよう
に、位相回折格子フィルタと固体撮像素子とを一体化す
るという提案がなされている。しかしながらそれ等の提
案はすべて位相回折格子フィルタはCCDのパッケージ
とは別体であり、別工程であとから組み込む構成となっ
ている。そのため位置合わせや取付精度が要求され、部
品費とともに組込費もかかり、量産に適しないで、コス
トアップの要因となっている。
In order to solve the above-mentioned problems, it has been proposed to integrate a phase diffraction grating filter and a solid-state image pickup device as disclosed in, for example, Japanese Patent Laid-Open No. 63-307423. ing. However, in all of these proposals, the phase diffraction grating filter is separate from the CCD package, and is incorporated later in a separate process. For this reason, alignment and mounting accuracy are required, and assembly costs as well as parts costs are not suitable for mass production, which is a factor of cost increase.

【0008】本発明は、量産性に適してコストアップを
最小限に押さえた位相格子一体型の固体撮像素子を提供
することを目的とする。
An object of the present invention is to provide a solid-state image pickup device integrated with a phase grating, which is suitable for mass production and minimizes cost increase.

【0009】[0009]

【課題を解決するための手段】上記目的は、エリアセン
サを透明樹脂で封止してなる固体撮像素子において、C
CDエリアセンサの受光面側を覆う透明樹脂の表面に、
光学的ローパス効果を有する位相型の回折格子を成形し
たことを特徴とする樹脂封止型固体撮像素子(第1発
明)と、エリアセンサを樹脂で封止してなる固体撮像素
子において、CCDエリアセンサの受光面側を透明樹脂
で、背面側を遮光性樹脂で2種成形し、透明樹脂部の表
面に、光学的ローパス効果を有する位相型の回折格子を
成形したことを特徴とする樹脂封止型固体撮像素子(第
2発明)により達成される。
The above object is to provide a solid-state image sensor in which an area sensor is sealed with a transparent resin.
On the surface of the transparent resin that covers the light receiving surface side of the CD area sensor,
A resin-encapsulated solid-state imaging device (first invention) characterized by molding a phase-type diffraction grating having an optical low-pass effect, and a solid-state imaging device in which an area sensor is encapsulated with resin. The light-receiving side of the sensor is made of transparent resin and the back side is made of light-shielding resin. Two types are molded, and a phase type diffraction grating having an optical low pass effect is molded on the surface of the transparent resin part. This is achieved by a static solid-state imaging device (second invention).

【0010】なお上記第1発明及び第2発明の好ましい
実施態様は、共通して 上記回折格子の表面に、その透明樹脂と光学的特性の
異なる別の透明樹脂をその回折格子に噛み合うように更
に一体成形した実施態様と、 上記回折格子を成形した透明樹脂又は上記の別の透明
樹脂の何れかは、赤外光を吸収する特性を有する実施態
様が好ましい。
In the preferred embodiments of the first and second inventions, it is further common that another transparent resin having optical characteristics different from that of the transparent resin is engaged with the diffraction grating on the surface of the diffraction grating. It is preferable that the integrally molded embodiment and either the transparent resin molded of the diffraction grating or the other transparent resin described above have a characteristic of absorbing infrared light.

【0011】[0011]

【実施例】図1は本発明の第1発明の実施例を示す概略
断面図である。CCDエリアセンサ2は、その周面はす
べて透明樹脂1によって封止されモールド状となってい
て、リードフレーム3によってCCDエリアセンサ2で
の画像情報が取り出されるようになっている。そしてC
CDエリアセンサ2の受光面2aを覆う透明樹脂1の表
面には光学的ローパス効果を有した位相型の回折格子1
aが設けられている。
1 is a schematic sectional view showing an embodiment of the first invention of the present invention. The CCD area sensor 2 has a peripheral surface all of which is sealed with the transparent resin 1 and has a mold shape, and the lead frame 3 allows the image information of the CCD area sensor 2 to be taken out. And C
The phase type diffraction grating 1 having an optical low pass effect is formed on the surface of the transparent resin 1 which covers the light receiving surface 2a of the CD area sensor 2.
a is provided.

【0012】回折格子1aはCCDエリアセンサ2の受
光面2aに対して格子性能が保障される必要十分な大き
さとなっており、キズ等の防止のため一段低く形成され
ている。位相型の回折格子1aの断面形状は、CCDエ
リアセンサ2の構成およびローパス特性の設定の仕方に
よって異なるが、sin波,台形波,矩形波,三角波など
何れの波形でもよく、格子方向,方向数,ピッチ,振幅
なども加工が可能な範囲ならば自由に設定できる。図5
は矩形波状の断面形状を有した位相格子フィルタのロー
パス特性を示すMTF特性図である。撮影光学系を通り
受光面2aに結像するよう入射した光線は、位相型の回
折格子1aにより分離されて受光面2aに到達し、所望
のローパス特性が得られる。
The diffraction grating 1a has a size sufficient to ensure the grating performance with respect to the light receiving surface 2a of the CCD area sensor 2, and is formed to be one step lower in order to prevent scratches and the like. The cross-sectional shape of the phase type diffraction grating 1a may be any waveform such as a sin wave, a trapezoidal wave, a rectangular wave, and a triangular wave, depending on the configuration of the CCD area sensor 2 and the setting method of the low-pass characteristic, and the grating direction and the number of directions. , Pitch, amplitude, etc. can be freely set as long as they can be processed. Figure 5
FIG. 4 is an MTF characteristic diagram showing the low pass characteristic of a phase grating filter having a rectangular wave-shaped cross section. The light beam that has passed through the photographing optical system and is incident on the light receiving surface 2a so as to form an image is separated by the phase type diffraction grating 1a and reaches the light receiving surface 2a, so that a desired low-pass characteristic is obtained.

【0013】かかる構成とすることにより、極めて安価
な光学的ローパス効果を有するCCDが提供されること
となった。
With such a structure, a CCD having an extremely low cost optical low-pass effect can be provided.

【0014】図2は本発明の第2発明の実施例を示す概
略断面図である。CCDエリアセンサ2の受光面2a側
は透明樹脂1で、背面側を遮光性樹脂4で2種成形し、
透明樹脂1の表面に光学的ローパス効果を有した位相型
の回折格子1aを設ける構成としたもので、3はリード
フレームを示している。
FIG. 2 is a schematic sectional view showing an embodiment of the second invention of the present invention. The light receiving surface 2a side of the CCD area sensor 2 is made of a transparent resin 1, and the back surface side is made of a light-shielding resin 4.
A phase type diffraction grating 1a having an optical low-pass effect is provided on the surface of the transparent resin 1. Reference numeral 3 indicates a lead frame.

【0015】図1に示した実施例のようにCCDの外周
全体を透明樹脂とした場合には、受光部以外からの光が
容易に迷光として侵入する。これらの迷光は全て不要光
であって、進入した迷光はナイズとして作用し、画質特
にコントラストの低下を招く、図1の実施例でかかる現
象を防止するには、CCDのホルダー部の遮光を十分に
し、受光面以外への光を遮断する必要があるが、機構は
やや複雑となる。
When the entire outer periphery of the CCD is made of transparent resin as in the embodiment shown in FIG. 1, light from other than the light receiving portion easily enters as stray light. All of these stray light are unnecessary light, and the stray light that has entered acts as a noise, and in order to prevent such a phenomenon in the embodiment of FIG. Therefore, it is necessary to block the light other than the light receiving surface, but the mechanism becomes slightly complicated.

【0016】そこで図2の実施例に示すように、受光面
2aの前面以外は遮光性の樹脂として2種成形とすれ
ば、特に機構に注意を払わなくても遮光効果は充分に得
られる。なお図2に示した実施例では、受光面2aの前
面以外は全て遮光性樹脂としたが、遮光性樹脂は背面だ
けとしたり、透明樹脂の範囲をある程度変えても、それ
なりの効果は得ることができる。
Therefore, as shown in the embodiment of FIG. 2, if the light-shielding resin other than the front surface of the light-receiving surface 2a is molded in two kinds, a sufficient light-shielding effect can be obtained without paying special attention to the mechanism. In the embodiment shown in FIG. 2, the light-shielding resin is used except for the front surface of the light-receiving surface 2a. However, even if the light-shielding resin is only on the back surface or the range of the transparent resin is changed to some extent, a certain effect can be obtained. You can

【0017】図3に示す実施例は、図1に示した実施例
の回折格子1aの表面にその透明樹脂1と光学的特性の
異なる別の透明樹脂5を回折格子1aに噛み合うように
更に一体成形したものである。図1または図2の実施例
では位相回折格子1a面が露出しているため、傷が付い
たり汚れが付き易いなどの問題点を有しているが、図3
の実施例では別の透明樹脂5によって保護されて上記の
問題点を解消している。
The embodiment shown in FIG. 3 is further integrated with the surface of the diffraction grating 1a of the embodiment shown in FIG. 1 so that the transparent resin 1 and another transparent resin 5 having different optical characteristics are meshed with the diffraction grating 1a. It is molded. In the embodiment of FIG. 1 or 2, the surface of the phase diffraction grating 1a is exposed, so that there is a problem that scratches or stains easily occur.
In this embodiment, another transparent resin 5 is used to protect the above problems.

【0018】また図3に示す実施例では2種の透明樹脂
1,5の間で屈折率等の異なる光学的特性の樹脂材を組
み合わせているので、例えば特開昭52-101056号公報や
特開平3-191319号公報からも公知の通り、光学的な性能
を向上させることが可能である。
In the embodiment shown in FIG. 3, resin materials having different optical characteristics such as refractive index are combined between the two kinds of transparent resins 1 and 5, so that, for example, JP-A-52-101056 or As known from Kaihei 3-191319, it is possible to improve optical performance.

【0019】なお図3は、図1に示した実施例の回折格
子1aの表面に別の透明樹脂5を設けた実施例である
が、図2に示した実施例の回折格子1aの表面にその透
明樹脂と光学的特性の異なる別の透明樹脂層を回折格子
1aに噛み合うように更に一体成形することも可能であ
って、この場合には図3の効果に加えて図2の実施例の
有している遮光効果をも得ることができる。
FIG. 3 shows an embodiment in which another transparent resin 5 is provided on the surface of the diffraction grating 1a of the embodiment shown in FIG. 1, but the surface of the diffraction grating 1a of the embodiment shown in FIG. Another transparent resin layer having a different optical characteristic from that of the transparent resin may be integrally formed so as to be engaged with the diffraction grating 1a. In this case, in addition to the effect of FIG. 3, the embodiment of FIG. It is also possible to obtain the light-shielding effect that it has.

【0020】図4に示す実施例は、図1又は図2に示し
た実施例(図示したのは図1)の回折格子1aの表面に
その透明樹脂1と光学特性の異なる別の透明樹脂5を回
折格子1aと噛み合うように更に一体成形し、外側に位
置した透明樹脂5の受光面側にも位相型の回折格子5a
を設けている。ローパス特性を設定する場合、格子は一
方方向より2方向の方が自由度は大である。しかし位相
格子を型により作製し、その型を切削加工によって作製
する場合などは、1面に1方向しか格子の設定ができな
いケースがある。しかし図4に示した構成の場合には、
格子の方向を2方向に設定することが可能となり、良好
なローパス特性を得ることができる。
In the embodiment shown in FIG. 4, another transparent resin 5 having an optical characteristic different from that of the transparent resin 1 is formed on the surface of the diffraction grating 1a of the embodiment shown in FIG. 1 or 2 (the drawing is shown in FIG. 1). Is further integrally molded so as to mesh with the diffraction grating 1a, and the phase type diffraction grating 5a is also formed on the light receiving surface side of the transparent resin 5 located outside.
Is provided. When setting the low-pass characteristic, the degree of freedom of the lattice is greater in two directions than in one direction. However, when the phase grating is manufactured by a mold and the mold is manufactured by cutting, there are cases where the grating can be set in only one direction on one surface. However, in the case of the configuration shown in FIG.
It is possible to set the directions of the grating in two directions, and good low-pass characteristics can be obtained.

【0021】次に説明する実施例は、図1および図2に
おける透明樹脂1を赤外光を吸収する特性を有した透明
樹脂とし、また図3或いは図4の透明樹脂1或いは5の
何れかを赤外光を吸収する特性を有した透明樹脂とする
もので、このような構成とすることにより、CCDエリ
アセンサ2は視感度に近似した光波長について影像信号
を得ることができる。
In the embodiment described below, the transparent resin 1 in FIGS. 1 and 2 is a transparent resin having a characteristic of absorbing infrared light, and either the transparent resin 1 or 5 in FIG. 3 or 4 is used. Is a transparent resin having a characteristic of absorbing infrared light. With such a configuration, the CCD area sensor 2 can obtain an image signal at a light wavelength close to the luminosity factor.

【0022】[0022]

【発明の効果】本発明による樹脂封止型固体撮像素子
は、CCDエリアセンサの外周を樹脂によって一体的に
封止されているので、環境条件による影響を除いて性能
の安定化と長寿命化がはかられており、更に受光面前面
を覆う透明樹脂には光学的ローパス効果を有する位相型
の回折格子が成形されているので、量産性に優れてい
て、離散的に画像情報を得るようにしたCCDにおいて
も、偽色信号の発生するのを防止して良質の影像信号が
得られることとなった。また本発明の第2発明によって
は、先の効果に加えて、受光部に入光とする不要光を阻
止する構成となっているので、ノイズの少ない良質の影
像信号が得られることとなった。
In the resin-sealed solid-state image sensor according to the present invention, the outer periphery of the CCD area sensor is integrally sealed with resin, so that the performance is stabilized and the life is extended by eliminating the influence of environmental conditions. In addition, since the transparent resin covering the front surface of the light receiving surface is molded with a phase type diffraction grating having an optical low pass effect, it is excellent in mass productivity and discrete image information can be obtained. Even in the above CCD, a good quality image signal can be obtained by preventing the generation of false color signals. Further, according to the second invention of the present invention, in addition to the above-mentioned effect, since the unnecessary light to be incident on the light receiving portion is blocked, a high-quality image signal with less noise can be obtained. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1発明の実施例を示す概略断面図で
ある。
FIG. 1 is a schematic sectional view showing an embodiment of the first invention of the present invention.

【図2】本発明の第2発明の実施例を示す概略断面図で
ある。
FIG. 2 is a schematic sectional view showing an embodiment of the second invention of the present invention.

【図3】本発明の他の実施例を示す概略断面図である。FIG. 3 is a schematic sectional view showing another embodiment of the present invention.

【図4】本発明の更に他の実施例を示す概略断面図であ
る。
FIG. 4 is a schematic sectional view showing still another embodiment of the present invention.

【図5】位相格子フィルタのローパス特性を示すMTF
特性図である。
FIG. 5 is an MTF showing a low pass characteristic of a phase grating filter.
It is a characteristic diagram.

【図6】回折格子の配置関係を示す説明図である。FIG. 6 is an explanatory diagram showing an arrangement relationship of diffraction gratings.

【符号の説明】[Explanation of symbols]

1,5 透明樹脂 1a,5a 回折格子 2 CCDエリアセンサ 2a 受光面 3 リードフレーム 4 遮光性樹脂 1,5 Transparent resin 1a, 5a Diffraction grating 2 CCD area sensor 2a Light receiving surface 3 Lead frame 4 Light blocking resin

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 エリアセンサを透明樹脂で封止してなる
固体撮像素子において、CCDエリアセンサの受光面側
を覆う透明樹脂の表面に、光学的ローパス効果を有する
位相型の回折格子を成形したことを特徴とする樹脂封止
型固体撮像素子。
1. In a solid-state image sensor in which an area sensor is sealed with a transparent resin, a phase type diffraction grating having an optical low pass effect is formed on the surface of the transparent resin covering the light receiving surface side of the CCD area sensor. A resin-encapsulated solid-state image sensor characterized by the above.
【請求項2】 上記回折格子の表面に、その透明樹脂と
光学的特性の異なる別の透明樹脂をその回折格子に噛み
合うように更に一体成形したことを特徴とする請求項1
の樹脂封止型固体撮像素子。
2. The surface of the diffraction grating is further integrally molded with another transparent resin having optical characteristics different from that of the transparent resin so as to mesh with the diffraction grating.
Resin-encapsulated solid-state image sensor.
【請求項3】 上記の回折格子を成形した透明樹脂又は
上記の別の透明樹脂の何れかは、赤外光を吸収する特性
を有することを特徴とする請求項1又は2の樹脂封止型
固体撮像素子。
3. The resin-sealed mold according to claim 1, wherein either the transparent resin molded with the diffraction grating or the other transparent resin has a property of absorbing infrared light. Solid-state image sensor.
【請求項4】 エリアセンサを樹脂で封止してなる固体
撮像素子において、CCDエリアセンサの受光面側を透
明樹脂で、背面側を遮光性樹脂で2種成形し、透明樹脂
部の表面に、光学的ローパス効果を有する位相型の回折
格子を成形したことを特徴とする樹脂封止型固体撮像素
子。
4. A solid-state imaging device comprising an area sensor sealed with resin, wherein the light receiving surface side of the CCD area sensor is made of transparent resin and the back side is made of light-shielding resin. A resin-encapsulated solid-state imaging device, characterized in that a phase-type diffraction grating having an optical low-pass effect is molded.
【請求項5】 上記回折格子の表面に、その透明樹脂と
光学的特性の異なる別の透明樹脂をその回折格子に噛み
合うように更に一体成形したことを特徴とする請求項4
の樹脂封止型固体撮像素子。
5. The surface of the diffraction grating is further integrally formed with another transparent resin having optical characteristics different from that of the transparent resin so as to be engaged with the diffraction grating.
Resin-encapsulated solid-state image sensor.
【請求項6】 上記の回折格子を成形した透明樹脂又は
上記の別の透明樹脂の何れかは、赤外光を吸収する特性
を有することを特徴とする請求項4又は5の樹脂封止型
固体撮像素子。
6. The resin-sealed mold according to claim 4, wherein either the transparent resin molded with the diffraction grating or the other transparent resin has a property of absorbing infrared light. Solid-state image sensor.
JP6002177A 1994-01-13 1994-01-13 Resin sealed type solid-state image pickup element Pending JPH07209610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6002177A JPH07209610A (en) 1994-01-13 1994-01-13 Resin sealed type solid-state image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6002177A JPH07209610A (en) 1994-01-13 1994-01-13 Resin sealed type solid-state image pickup element

Publications (1)

Publication Number Publication Date
JPH07209610A true JPH07209610A (en) 1995-08-11

Family

ID=11522090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6002177A Pending JPH07209610A (en) 1994-01-13 1994-01-13 Resin sealed type solid-state image pickup element

Country Status (1)

Country Link
JP (1) JPH07209610A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100332018B1 (en) * 1999-06-19 2002-04-10 박원희 Image sensing module
US6980250B1 (en) 1998-09-29 2005-12-27 Fuji Photo Film Co., Ltd. Solid state imaging device for reducing camera size
JP2006229116A (en) * 2005-02-21 2006-08-31 Sony Corp Solid state image sensor
CN102128594A (en) * 2010-12-29 2011-07-20 哈尔滨量具刃具集团有限责任公司 Grating lever-structured contact-pin displacement sensor and measuring method thereof
CN108292662A (en) * 2015-12-03 2018-07-17 索尼半导体解决方案公司 Semiconductor chip and electronic device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6980250B1 (en) 1998-09-29 2005-12-27 Fuji Photo Film Co., Ltd. Solid state imaging device for reducing camera size
KR100332018B1 (en) * 1999-06-19 2002-04-10 박원희 Image sensing module
JP2006229116A (en) * 2005-02-21 2006-08-31 Sony Corp Solid state image sensor
CN102128594A (en) * 2010-12-29 2011-07-20 哈尔滨量具刃具集团有限责任公司 Grating lever-structured contact-pin displacement sensor and measuring method thereof
CN108292662A (en) * 2015-12-03 2018-07-17 索尼半导体解决方案公司 Semiconductor chip and electronic device
US11619772B2 (en) * 2015-12-03 2023-04-04 Sony Semiconductor Solutions Corporation Semiconductor chip and electronic apparatus
CN108292662B (en) * 2015-12-03 2023-06-16 索尼半导体解决方案公司 Semiconductor chip and electronic device

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