JPH07202475A - Electronic device - Google Patents

Electronic device

Info

Publication number
JPH07202475A
JPH07202475A JP5336358A JP33635893A JPH07202475A JP H07202475 A JPH07202475 A JP H07202475A JP 5336358 A JP5336358 A JP 5336358A JP 33635893 A JP33635893 A JP 33635893A JP H07202475 A JPH07202475 A JP H07202475A
Authority
JP
Japan
Prior art keywords
insulating layer
metal
shield
metal pattern
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5336358A
Other languages
Japanese (ja)
Other versions
JP3269235B2 (en
Inventor
Tomoharu Shinoda
智晴 信田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP33635893A priority Critical patent/JP3269235B2/en
Publication of JPH07202475A publication Critical patent/JPH07202475A/en
Application granted granted Critical
Publication of JP3269235B2 publication Critical patent/JP3269235B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

PURPOSE:To enhance the shielding structure for an electronic device while simplifying the structure for mounting a high frequency device. CONSTITUTION:A lead-out metal electrode 2, a lower shield electrode 13 and an insulating layer 3 are provided on an alumina substrate 1 and an annular shield metal pattern 4 is provided on the insulating layer 3. A high frequency device is then mounted on the insulating layer 3 and a metal cap is bonded to the shield metal pattern 4 through a conductive sealing material. Consequently, the shielding effect is enhanced through a simple structure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子部品のシールド構
造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shield structure for electronic parts.

【0002】[0002]

【従来の技術】図4は従来例の電子部品の断面図を示し
ている。1はセラミック基板でこの基板1上には高周波
部品8が接着剤7で貼付けられることにより実装されて
いる。また、この高周波部品8は上部を金属キャップ6
で覆われている。このとき基板1は裏面にシールドのた
めの金属膜23を貼付けたアルミナ材料で形成されてい
る。
2. Description of the Related Art FIG. 4 shows a sectional view of a conventional electronic component. Reference numeral 1 denotes a ceramic substrate on which a high frequency component 8 is mounted by being attached with an adhesive 7. The high-frequency component 8 has a metal cap 6 at the top.
Is covered with. At this time, the substrate 1 is made of an alumina material having a metal film 23 for shielding attached to its back surface.

【0003】[0003]

【発明が解決しようとする課題】上記構成において問題
になるのは、基板1上にある高周波部品8をシールドす
る方法である。シールド用には上部の金属キャップ6と
裏面の金属膜23とが寄与するが、このままではどちら
も接地端子に接続されていない浮いた状態であり、更に
改めて接続しなければならない。また、基板1の厚み分
のすき間ができており、そこから電磁ノイズが漏れて入
ってくるという不具合もある。
A problem in the above structure is how to shield the high frequency component 8 on the substrate 1. The metal cap 6 on the upper side and the metal film 23 on the back side contribute to the shield, but if they are left as they are, they are in a floating state where they are not connected to the ground terminal and must be connected again. In addition, there is a problem that a gap corresponding to the thickness of the substrate 1 is formed, and electromagnetic noise leaks from there.

【0004】そこで本発明は高周波部品8の電磁シール
ド性を、簡易な構造的変更にて向上することを目的とす
る。
Therefore, an object of the present invention is to improve the electromagnetic shielding property of the high frequency component 8 by a simple structural change.

【0005】[0005]

【課題を解決するための手段】この目的を達成するため
に、本発明は高耐熱性絶縁基板と、その高耐熱性絶縁基
板上に引出し電極及び下部シールド用金属電極を設け、
前記金属電極の高周波部品との接合部と前記高耐熱性絶
縁基板上の端部に設けた引出し部以外の前記高耐熱性絶
縁基板上を絶縁層で覆い、前記絶縁層上にリング状のシ
ールド用金属パターンを設け、シールド用金属パターン
は金属電極の接地電極と接続し、前記絶縁層上に高周波
部品を実装し、前記シールド用金属パターンに対応する
部分に端面を設けた金属キャップを、前記シールド用金
属パターンに導電性接着剤で接合し、封止した構成とす
るものである。
In order to achieve this object, the present invention provides a high heat resistant insulating substrate, and a lead electrode and a lower shield metal electrode provided on the high heat resistant insulating substrate.
A ring-shaped shield is formed on the insulating layer by covering the high heat-resistant insulating substrate other than the joint between the metal electrode and the high-frequency component and the lead-out portion provided at the end of the high heat-resistant insulating substrate. A metal pattern for shielding, the metal pattern for shielding is connected to a ground electrode of a metal electrode, a high frequency component is mounted on the insulating layer, and a metal cap having an end face at a portion corresponding to the metal pattern for shielding is provided. The shield metal pattern is joined with a conductive adhesive and sealed.

【0006】[0006]

【作用】以上の構成とすれば、下部シールド用金属電極
と、接地電極と、シールド用金属パターンと導電性接着
剤と金属キャップにて、中の高周波部品が完全にシール
ドされ、電磁雑音に強い電子部品とすることができる。
With the above configuration, the high frequency components inside are completely shielded by the lower shield metal electrode, the ground electrode, the shield metal pattern, the conductive adhesive, and the metal cap, and are resistant to electromagnetic noise. It can be an electronic component.

【0007】[0007]

【実施例】以下、図を用いて本発明の実施例を説明す
る。図1は本発明の一実施例の電子部品の基板部の分解
斜視図である。図2はその平面図である。図3はこの基
板を使用した電子部品の完成品の断面図である。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an exploded perspective view of a board portion of an electronic component according to an embodiment of the present invention. FIG. 2 is a plan view thereof. FIG. 3 is a sectional view of a completed electronic component using this substrate.

【0008】図1,図2,図3において1はアルミナで
形成された基板で、この基板1上には引出し用金属電極
2,絶縁層3,シールド用金属パターン4が備えられ、
絶縁層3の上には圧電共振子などのKHz帯からMHz
帯までの高周波部品8が実装されている。この高周波部
品8の下面と絶縁層3表面間には接着剤7を設けてお
り、これにより固着されている。そしてこの状態で高周
波部品8とその外周の8個の電極2とは図3に示すごと
くボンディングワイヤ9を介して接続される。ワイヤー
が接続される部分は図2の11の箇所に相当する。ま
た、高周波部品8の上面には金属キャップ6が配置さ
れ、導電性のシール材5を介して中の高周波部品8が密
封されるように基板1上の金属パターン4と接合されて
いる。
In FIGS. 1, 2 and 3, 1 is a substrate made of alumina, on which a metal electrode 2 for extraction, an insulating layer 3, and a metal pattern 4 for shielding are provided.
From the KHz band such as a piezoelectric resonator to MHz on the insulating layer 3.
The high frequency components 8 up to the band are mounted. An adhesive 7 is provided between the lower surface of the high frequency component 8 and the surface of the insulating layer 3 and is fixed by this. Then, in this state, the high frequency component 8 and the eight electrodes 2 on the outer periphery thereof are connected via the bonding wires 9 as shown in FIG. The portion to which the wire is connected corresponds to the portion 11 in FIG. Further, a metal cap 6 is arranged on the upper surface of the high-frequency component 8, and is joined to the metal pattern 4 on the substrate 1 so that the high-frequency component 8 therein is sealed via a conductive sealing material 5.

【0009】更に詳細に述べると、図1において絶縁層
3は基板1のほぼ全面に均一な厚みで設けられた絶縁層
であり、これには孔3aを有している。この孔3aを介
して、電極2のうちの接地用電極10の一部10aとシ
ールド用金属パターン4の一部4aが電気的に接続され
ている。接地用電極10はさらに、高周波部品が多く搭
載される基板1の中央部に設けた下部シールド電極13
に接続されている。一方、金属パターン4については、
前述したように金属キャップ6と導電性シール材5によ
り電気的に接続されている。これらの構成により、金属
キャップ6、金属パターン4、接地用電極10、および
下部シールド電極13にて、高周波部品8は完全に接地
シールドされているものである。
More specifically, in FIG. 1, the insulating layer 3 is an insulating layer provided on the substantially entire surface of the substrate 1 with a uniform thickness and has a hole 3a. A portion 10a of the ground electrode 10 of the electrode 2 and a portion 4a of the shielding metal pattern 4 of the electrode 2 are electrically connected via the hole 3a. The grounding electrode 10 further includes a lower shield electrode 13 provided in the central portion of the substrate 1 on which many high frequency components are mounted.
It is connected to the. On the other hand, regarding the metal pattern 4,
As described above, the metal cap 6 and the conductive sealing material 5 are electrically connected. With these configurations, the high-frequency component 8 is completely grounded and shielded by the metal cap 6, the metal pattern 4, the grounding electrode 10, and the lower shield electrode 13.

【0010】以上のような構造の電子部品では、シール
ドが完全にされている為、外部からの電磁雑音に中の高
周波部品が影響されることが少なく、安定した特性の電
子部品となる。
In the electronic component having the above-mentioned structure, since the shield is perfect, the high frequency component in the inside is less affected by the electromagnetic noise from the outside, and the electronic component has stable characteristics.

【0011】また、従来のように、下部のシールド材や
金属キャップを改めて接地接続させなければならないと
いう手間がかからず、電子部品を組み立てたパッケージ
にする工程の中で、併せて接続が行われてしまう為、簡
易に組み立てが出来るものである。
Further, unlike the conventional case, it is not necessary to reconnect the lower shield material and the metal cap to the ground, and the connection is also performed in the process of packaging the electronic parts. It can be easily assembled because it will be broken.

【0012】[0012]

【発明の効果】以上のように、高耐熱性絶縁基板とその
高耐熱性絶縁基板上に設けた引出し用及び下部シールド
用金属電極と、前記引出し用金属電極の高周波部品との
接合部を残し、前記高耐熱性絶縁基板上を被覆する絶縁
層と、前記絶縁層上に設け、一部を前記金属電極に接合
したリング状のシールド用金属パターンと、前記シール
ド用金属パターンに対応する部分に端面を設けたキャッ
プと、この端面と前記シールド用金属パターンを封止接
合する導電性シール材とで気密パッケージした電子部品
の構成にすることにより、簡易な組み立てで、しかも電
磁雑音に強い高度なシールドをした電子部品が実現でき
る。
As described above, the high-heat-resistant insulating substrate, the metal electrodes for drawing and lower shields provided on the high-heat-resistant insulating substrate, and the joining portion of the high-frequency component of the metal electrode for drawing are left. , An insulating layer covering the high heat resistant insulating substrate, a ring-shaped shield metal pattern provided on the insulating layer, a part of which is joined to the metal electrode, and a portion corresponding to the shield metal pattern. By constructing an electronic component airtightly packaged with a cap provided with an end face and a conductive sealing material for sealingly joining the end face and the shielding metal pattern, a simple assembly and a high level of resistance to electromagnetic noise can be achieved. Shielded electronic components can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の電子部品の基板の分解斜視
FIG. 1 is an exploded perspective view of a board of an electronic component according to an embodiment of the present invention.

【図2】図1の基板の平面図FIG. 2 is a plan view of the substrate of FIG.

【図3】本発明の一実施例の電子部品の断面図FIG. 3 is a sectional view of an electronic component according to an embodiment of the present invention.

【図4】従来例を示す断面図FIG. 4 is a sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 アルミナで形成された基板 2 引出し用金属電極 3 絶縁層 4 シールド用金属パターン 5 導電性シール材 6 金属キャップ 7 接着剤 8 高周波部品 1 A substrate formed of alumina 2 Metal electrode 3 for extraction 3 Insulating layer 4 Metal pattern for shielding 5 Conductive sealant 6 Metal cap 7 Adhesive 8 High frequency component

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 高耐熱性絶縁基板と、この高耐熱性絶縁
基板上に設けた引出し用及び下部シールド用金属電極
と、前記引出し用金属電極の高周波部品との接合部を残
し前記高耐熱性絶縁基板上を被覆する絶縁層と、前記絶
縁層上に設け、一部を前記金属電極に接合したリング状
のシールド用金属パターンと、前記絶縁層上に実装され
た高周波部品と、前記シールド用金属パターンに対応す
る部分に端面を設けたキャップと、この端面と前記シー
ルド用金属パターンを接合する導電性シール材とを備え
た電子部品。
1. A high heat resistant insulating substrate, a metal electrode for extraction and a lower shield provided on the high heat resistant insulating substrate, and a joining portion between the high frequency component of the metal electrode for extraction and the high thermal resistance. An insulating layer covering the insulating substrate, a ring-shaped shield metal pattern provided on the insulating layer and partly joined to the metal electrode, a high-frequency component mounted on the insulating layer, and the shield An electronic component comprising: a cap having an end face provided at a portion corresponding to a metal pattern; and a conductive sealing material for joining the end face and the shielding metal pattern.
JP33635893A 1993-12-28 1993-12-28 Electronic components Expired - Fee Related JP3269235B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33635893A JP3269235B2 (en) 1993-12-28 1993-12-28 Electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33635893A JP3269235B2 (en) 1993-12-28 1993-12-28 Electronic components

Publications (2)

Publication Number Publication Date
JPH07202475A true JPH07202475A (en) 1995-08-04
JP3269235B2 JP3269235B2 (en) 2002-03-25

Family

ID=18298309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33635893A Expired - Fee Related JP3269235B2 (en) 1993-12-28 1993-12-28 Electronic components

Country Status (1)

Country Link
JP (1) JP3269235B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5727727A (en) * 1995-02-02 1998-03-17 Vlt Corporation Flowing solder in a gap
US5808358A (en) * 1994-11-10 1998-09-15 Vlt Corporation Packaging electrical circuits
JP2008187144A (en) * 2007-01-31 2008-08-14 Sanyo Electric Co Ltd Circuit device and its manufacturing method
CN102970855A (en) * 2012-12-06 2013-03-13 山东彼岸电力科技有限公司 High-voltage electric shielding device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808358A (en) * 1994-11-10 1998-09-15 Vlt Corporation Packaging electrical circuits
JPH10303542A (en) * 1994-11-10 1998-11-13 Vlt Corp Method for soldering electrical circuit
US5906310A (en) * 1994-11-10 1999-05-25 Vlt Corporation Packaging electrical circuits
US6096981A (en) * 1994-11-10 2000-08-01 Vlt Corporation Packaging electrical circuits
US6119923A (en) * 1994-11-10 2000-09-19 Vlt Corporation Packaging electrical circuits
US6159772A (en) * 1994-11-10 2000-12-12 Vlt Corporation Packaging electrical circuits
US5727727A (en) * 1995-02-02 1998-03-17 Vlt Corporation Flowing solder in a gap
JP2008187144A (en) * 2007-01-31 2008-08-14 Sanyo Electric Co Ltd Circuit device and its manufacturing method
CN102970855A (en) * 2012-12-06 2013-03-13 山东彼岸电力科技有限公司 High-voltage electric shielding device

Also Published As

Publication number Publication date
JP3269235B2 (en) 2002-03-25

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