JPH07201695A - Method of protecting electric source instantaneous stoppage of semiconductor treater - Google Patents

Abstract

PURPOSE:To reduce a semiconductor fail due to an electric source instantaneous stoppage during a treatment step and decrease treatment works. CONSTITUTION:Disregarding an instantaneous stoppage within a first specific period T1 set beforehand, a semiconductor under treatment is disposed as a failed product in an instantaneous stoppage of second specific periods T2 to T3, and disregarding an instantaneous stoppage during the first setting step with respect to the instantaneous stoppage in an intermediate period of first and second specific periods T1 to T2, a semiconductor during treatment is treated as a failed product in the second setting step, and return to a specific step before an instantaneous period plus a specific period in steps of T3 and after to restart. It is considered by applying various changes thereto that the instantaneous stoppage within 0.5sec. is disregarded and the semiconductor under treatment is treated as a failed product for the instantaneous stoppage of about 0.5sec. or more in the treatment step set beforehand, etc.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uniformly describes a power source of a semiconductor processing device as an instantaneous power failure (hereinafter abbreviated as an instantaneous power failure, and a long-term power failure that cannot be called an instantaneous power failure is also unified under the term instantaneous power failure). The present invention relates to a protection method, and more particularly to an efficient power failure protection method for a semiconductor processing apparatus that can reduce the risk of a semiconductor being processed becoming defective due to a power failure.

[0002]

2. Description of the Related Art FIG. 10 shows a structural example of a heat treatment function in a semiconductor processing apparatus. FIG. 10 schematically shows the concept of the heat treatment furnace. In FIG. 10, 1 is a heat treatment furnace,
Reference numeral 2 is a semiconductor wafer which is a material to be processed and mounted on a boat loaded in the heat treatment furnace 1. Reference numeral 3 is an electric heater for heating the heat treatment furnace 1 (hereinafter referred to as a heater). Heat treatment furnace 1
Detailed illustrations of the function of exchanging the atmospheric gas inside, the lifting mechanism of the boat loaded with the semiconductor wafer, and the control functions thereof are omitted. The heater 3 is connected via a switching function 5 composed of a transformer 4 for converting a predetermined AC power source AC to a predetermined voltage and a switching element such as a triac for controlling the temperature inside the heat treatment furnace. ing. Generally, a three-phase AC power supply is used as the AC power supply AC, but it is shown as a single phase for simplicity. The temperature inside the heat treatment furnace is detected by the temperature sensor 6 and input to the temperature control function 7 of this semiconductor processing apparatus. Temperature control function 7
In the above, the deviation temperature is compared with the set temperature provided in the control device 9 equipped with a sequencer or the like, which is an upper function of the temperature control function 7, or is set by the control device 9. The switching function 5 is adjusted according to the function preset in the temperature control function 7 so as to correct it.
Outputs a signal for controlling. The signal controlling the switching function 5 is amplified by the amplifying function 8 to a signal level suitable for the function of the semiconductor switching element forming the switching function 5, and the switching function 5 is activated. Therefore, the AC power supplied from the transformer 4 is the switching function 5
The average current value is controlled by and is supplied to the heater 3. Therefore, the semiconductor wafers-2 of all the materials to be processed loaded in the heat treatment furnace 1 are maintained at 650 ° ± 0.5 ° for a predetermined processing time as shown on the side of the semiconductor wafer-2 in the figure. It

The heat treatment furnace 1 is controlled by a time schedule as shown in FIG. 11, for example. In FIG. 11, the horizontal axis indicates the passage of time, and (A) the vertical axis indicates the set temperature of the internal temperature of the heat treatment furnace. All set temperatures are given in degrees Celsius. Further, (B) shows the type of atmospheric gas inside the heat treatment furnace at a predetermined timing. In FIG. 11, when the semiconductor wafer-2 as the material to be processed is loaded, the temperature inside the heat treatment furnace is initially set to 400 ° C., and the atmosphere inside the furnace flows at a predetermined flow rate due to a processing function (not shown) N ₂ (nitrogen). Exchanged for gas. A first pretreatment is performed in this first treatment step. Thirty minutes after the power was turned on, the temperature was raised to 500 ° C. to become the second pretreatment step which is the second treatment step. Furthermore, 40 minutes after the power was turned on, the heat treatment temperature was raised to 650 ° C., and the atmosphere inside the furnace was changed from N ₂ gas to a predetermined flow rate of SiH by a processing function not shown.
₄ (Monosilane) gas is exchanged. That is, the main processing, which is the third processing step, is executed. In the process of this treatment, as described above, the internal temperature of the heat treatment furnace is controlled so as to be maintained within ± 0.5 degrees. 100 minutes after the predetermined heat treatment time of the third treatment step is completed and the power is turned on, the fourth treatment step, which is the first post-treatment step, is started and the set temperature is lowered to 500 degrees.
The atmosphere inside the furnace is SiH _{4 due} to a processing function (not shown).
The gas is exchanged with a predetermined flow rate of N ₂ gas. Further, 110 minutes after power-on, the second post-treatment step, which is the fifth treatment step, is started and the preset temperature is lowered to 400 degrees, and after 140 minutes, all the preset treatment steps are completed and the preset temperature is returned to normal temperature. The atmosphere inside the furnace is N due to a processing function not shown.
₂ Gas is exchanged with outside air. After that, when the temperature of the semiconductor wafer-2 of the material to be processed falls to a predetermined temperature, the semiconductor wafer-2 is taken out of the heat treatment furnace 1 by a mechanism (not shown).

As is well known, a circuit breaker or the like (not shown) is inserted in the power transmission circuit of the AC power supply AC in FIG. 10 for safety. The circuit breaker (not shown) is temporarily released and reclosed when an abnormality occurs in the load circuit, for example. If the circuit breaker (not shown) is turned on again and the circuit abnormality is not recovered, the above operation is repeated again, and if it is not recovered even after a predetermined time, the circuit breaker (not shown) is released. .

By the way, as described above, when the power supply of the semiconductor heat treatment apparatus is shut off due to the operation of the circuit breaker when an abnormality occurs in the circuit or other reasons, the semiconductor processing becomes defective after the processing is completed. There was a problem of wasting the process time and materials up to that point. Further, when an instantaneous blackout is detected, the process is continued as it is or the heat treatment is stopped and the material to be processed is treated as a defective product and a predetermined process is performed.

[0006]

By the way, it is very wasteful to find a defective product due to a momentary power failure after the heat treatment is completed in the above-described processing operation. Further, in recent years, it has become necessary to further improve the accuracy of heat treatment in response to the required performance of semiconductor products that are more sophisticated than before.
That is, the above-described determination process has a problem that an excellent product cannot be obtained and the yield is deteriorated. In addition, in general, a large number of semiconductor processing equipments are installed side by side in a processing factory, so it is necessary for workers to perform prompt work after the occurrence of an instantaneous power failure, and to secure and educate workers for that purpose. The present invention solves the above-mentioned problems (problems) of the conventional ones, copes with the processing conditions of heat treatment, instantaneous blackout time, etc., and also appropriately handles the processing operation during instantaneous blackout in response to the process conditions during instantaneous blackout. To improve the yield due to a momentary power failure by automatically performing the operation based on the settings, and to reduce the demands on workers. The purpose (problem) is to provide a protection method.

[0007]

In order to solve the above-mentioned problems, in a method for protecting a semiconductor manufacturing apparatus from an instantaneous power failure in a semiconductor manufacturing apparatus according to the present invention, the processing apparatus and the target processing apparatus are protected under control conditions preset in the processing apparatus. Ignore the instantaneous blackout within the first predetermined time set in advance corresponding to the conditions of the processed semiconductor, etc., and treat the semiconductor being processed as a defective product for the instantaneous blackout longer than the second predetermined time. With respect to the instantaneous interruption between the first predetermined time and the second predetermined time, the instantaneous interruption occurs during the first setting step preset in accordance with the conditions of the processing apparatus and the semiconductor to be processed. Ignoring the stoppage, the semiconductor being processed is treated as a defective product during the second setting step, and the processing apparatus, the semiconductor to be processed, and the conditions such as the progress of the processing step are performed in the steps other than the above setting step. Corresponding to the instantaneous blackout time plus one Time before the predetermined step back again Star - added to bets. Further, under the temperature control conditions preset in this processing apparatus, the instantaneous blackout within approximately 0.5 seconds is ignored. Further, if there is an instantaneous blackout of approximately 0.5 seconds or more in the processing steps preset corresponding to the conditions of the processing apparatus and the semiconductor to be processed, the semiconductor to be processed is processed as a defective product. I chose In addition, under the temperature control condition preset in this processing apparatus, there is an instantaneous blackout within a preset time in a predetermined process before entering the preset processing process corresponding to the conditions of the processing device and the semiconductor to be processed. For example, the processing device, the semiconductor to be processed, the instantaneous blackout occurrence time, and other conditions set in advance are set so that the preset instantaneous blackout time plus a certain period of time is returned to a predetermined process and restarted. The instantaneous blackout within this preset time is about 5
It is desirable to be within seconds. In addition, the instantaneous blackout within about 5 seconds in a predetermined process after the processing process set in advance corresponding to the conditions of the processing apparatus and the semiconductor to be processed is ignored. Also, if there is an instantaneous blackout of approximately 5 seconds or more, the semiconductor being processed is treated as a defective product.

[0008]

According to the present invention, since the method as described above is used, the heat treatment is continued as it is at a timing that does not affect the heat treatment and / or a short interruption that does not affect the heat treatment.
If the heat treatment process can be redone, the conditions can be restored and restarted, or the processing time can be extended. Further, in the case of a timing that affects heat treatment or / and a long-time power failure (instantaneous interruption) that affects heat treatment, the material being processed is directly treated as a defective product. Therefore, the most effective and economical operation can be performed without the need for workers to cope with the instantaneous power failure, and the yield of the heat treatment process is improved. Therefore, it is no longer necessary to secure workers to perform the processing after the momentary power failure. The protection method described above can be appropriately and individually executed according to the conditions of the processing apparatus and the semiconductor to be processed. That is, the influence of the instantaneous blackout can be made zero by ignoring the instantaneous blackout within approximately 0.5 seconds. Further, if there is an instantaneous blackout of approximately 0.5 seconds or more in a predetermined process, the process after the instantaneous blackout is not wasted by treating the semiconductor being processed as a defective product. In addition, for a momentary blackout within a preset time in a predetermined process before entering a preset processing step, the instantaneous blackout corresponding to a preset condition such as a processing device, a semiconductor to be processed, and a momentary blackout occurrence time is set. If the process is returned to the predetermined process before the stop time plus a fixed time and restarted, the heat treatment is completed by the shortest time treatment that can eliminate the effect of the instantaneous power failure. By setting the instantaneous blackout within the preset time to approximately 5 seconds or less, it is possible to prevent defective products of the semiconductor to be processed due to the instantaneous blackout in most cases. In addition, the processing device and semiconductors to be processed, which are set in advance in correspondence with the conditions such as semiconductors, have approximately 5 steps.
By ignoring the instantaneous blackout within seconds, the effect of the instantaneous blackout can be reduced to zero. Further, if there is an instantaneous blackout of approximately 5 seconds or more, the semiconductor device being processed is treated as a defective product, so that the process after the instantaneous blackout is not wasted.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a structural example of a heat treatment function in a semiconductor processing apparatus to which the present invention is applied. In Figure 1,
The same reference numerals as those in FIG. 10 are used for the same or corresponding element functions corresponding to the conventional technology. Figure 1
1 schematically shows the concept of a heat treatment furnace, 1 is a heat treatment furnace, and 2 is a semiconductor wafer which is a material to be processed mounted in a boat loaded in the heat treatment furnace 1. Reference numeral 3 denotes a heating (electrical) heater for the heat treatment furnace 1, such as an atmosphere gas exchange function inside the heat treatment furnace, an elevating mechanism for a boat loaded with semiconductor wafers, peripheral devices and their control functions. Detailed illustration is omitted. The heater 3 has a predetermined AC power source AC,
They are connected via a transformer 4 for converting into a predetermined voltage and a switching function 5 constituted by a switching element such as a triac for controlling the internal temperature of the heat treatment furnace. Generally, a three-phase AC power supply is used as the AC power supply AC, but in the figure, it is simplified and shown as a single phase, and the connection circuit with the heater is also conceptually shown. The temperature inside the heat treatment furnace 1 is detected by the temperature sensor 6 and input to the temperature control function 7 of this semiconductor processing apparatus. The temperature control function 7 is set to a setting function provided in a higher-level control device 10 equipped with a sequencer or the like, or the deviation is compared with a set temperature specified by the control device 10 as the process progresses. A signal for controlling the switching function 5 is output according to a function preset in the temperature control function 7 so as to correct the temperature.
The signal controlling the switching function 5 is amplified by the amplifying function 8 to a signal level suitable for the function of the semiconductor switching element forming the switching function 5, and the switching function 5
To operate. Therefore, the alternating current power supplied from the transformer 4 is supplied to the heater 3 with the average current value controlled by the switching function 5. A power failure detection function 11 is connected to the AC power supply AC, and the output of the power failure detection function 11 is input to the control device 10 described above.

The heat treatment furnace 1 is operated by the controller 10 in a time schedule as shown in FIG. 2, for example.
In FIG. 2A, the horizontal axis represents the passage of time and the vertical axis represents the set temperature of the heat treatment furnace internal temperature. All set temperatures are given in degrees Celsius. FIG. 2B shows the passage of time shown on the horizontal axis, that is, the type of atmospheric gas corresponding to the processing step. Control device 1
As shown in FIG. 2 (A), processing temperatures τ1, τ2, τ3 and processing times T1, T2, T3, T4, T5 are set to 0 in advance corresponding to the conditions of the material to be heat treated.
In FIG. 2A, τ0 indicates the current environmental temperature, and T0 indicates the heat treatment start time, that is, 0 minutes. Similarly, T0 shown in FIG. 2B indicates the start time of the heat treatment, that is, 0 minute. In addition, the control device 10 may change the timing of the atmosphere gas in the heat treatment furnace, for example, T2 and T shown in FIG.
3, T5 and its flow rate when each gas is filled are set.

In FIG. 1, when a boat loaded with a semiconductor wafer of a material to be processed is loaded into a predetermined position of the heat treatment furnace 1 by a material-to-be-processed material loading function (reference numeral 2 shown in FIG. 1), control is performed. The heat treatment process is automatically executed by a process sequence preset in the apparatus 10, for example, a process sequence for executing the time schedule shown in FIG. 2 (time T
0). In the time schedule shown in FIG. 2 (B),
The atmosphere inside the heat treatment furnace 1 is exchanged from the atmosphere to N ₂ (nitrogen) gas, and the N ₂ gas is controlled at a predetermined flow rate. Also,
In the time schedule shown in FIG. 2 (A), the internal temperature of the heat treatment furnace 1 is set to τ1 degree, and the temperature control function 7 sets the heat treatment furnace internal temperature detected by the temperature sensor 6 to the set temperature τ1 degree. In this way, a signal for controlling the current to be supplied to the heater 3 is output. That is, the pre-first treatment step, which is the first step of this heat treatment, is started. Therefore, according to the output signal from the temperature control function 7, the switching function 5 continues to be in the released state while the internal temperature of the heat treatment furnace 1 is sufficiently lower than τ1 degree of the set temperature, and the internal temperature of the heat treatment furnace 1 is set to the set temperature. When τ1 degree is approached, the frequency of interruption is changed, and when the relationship between the internal temperature of the heat treatment furnace 1 and the set temperature τ1 degree reaches the preset first predetermined condition, the current is completely cut off. When the internal temperature of the heat treatment furnace 1 drops below a preset second predetermined condition, the switching function 5 is intermittently operated according to the deviation temperature between the internal temperature of the heat treatment furnace 1 and τ1 degree of the set temperature. The internal temperature of the heat treatment furnace 1 is raised to the above-mentioned first predetermined condition.

After a lapse of T1 from the time when the power is turned on, the process proceeds to the second pretreatment step, which is the second step of the heat treatment, and the set temperature is raised to τ2 degrees, and the internal temperature of the heat treatment furnace 1 is increased by the temperature control function 7 as described above. Controlled. After the lapse of T2 from the power-on, the process proceeds to the third process of this heat treatment, the main treatment process, and the set temperature is raised to the main treatment temperature τ3 degrees. At the same time, the atmosphere of the heat treatment furnace 1 is replaced with N ₂ gas by SiH ₄ (monosilane) gas and filled, and the SiH ₄ gas is controlled to a predetermined flow rate. The temperature control function 7 controls the internal temperature of the heat treatment furnace 1 by τ3 ±
Operates to maintain at 0.5 degrees. The predetermined third treatment step set in advance is completed, and the fourth treatment step, which is the fourth step, is followed by the first treatment step, and the set temperature is lowered to τ2 degrees after the power-on T3 minutes, and the heat treatment furnace 1 is operated by a treatment function (not shown). The internal atmosphere is changed from SiH ₄ gas to N ₂ gas at a predetermined flow rate. The temperature inside the heat treatment furnace drops due to the heat dissipation function that was previously configured in this heat treatment furnace. Furthermore, the fifth
After the power-on T4 minutes, the set temperature is lowered to τ1 degree, and the fifth step is completed, that is, all the steps of this heat treatment are completed and the heat treatment start T
After 5 minutes, the set temperature is returned to room temperature and the atmosphere inside the furnace is exchanged from N ₂ gas to the outside air by a processing function (not shown). After this, the semiconductor wafer that is the material to be processed-2
When the temperature decreases to a predetermined temperature, the boat (not shown) is lowered by a mechanism (not shown), the semiconductor wafer-2 is lowered from the boat (not shown) and taken out of the heat treatment furnace 1.

The heat treatment time schedule shown in FIG. 2 is an example, and the heat treatment time schedule is arbitrarily set and executed according to the conditions of the heat treatment apparatus and the treatment conditions of the material to be treated. It

Next, referring to FIG. 2, the operation of the control device when an instantaneous power failure (instantaneous power failure of the power source) occurs during the processing steps described above will be described with reference to FIGS. 3 to 8.

Embodiment 1 In FIG. 3, this semiconductor processing apparatus starts its operation and t1 is a first predetermined time.
If there is an instantaneous blackout within a second, for example, 0.5 seconds, this instantaneous blackout is ignored, and after the instantaneous blackout is completed, this heat treatment is restarted and the heat treatment as set is continued. The instantaneous blackout is t1 seconds or more and is within a second predetermined time t2 seconds, for example, within 5 seconds, and the instantaneous blackout is within T1 minutes in the time schedule described above with reference to FIG. 2, that is, the first setting. In the case of the first treatment step before the first step, which is a step, the instantaneous blackout is ignored, and after the instantaneous blackout is completed, this heat treatment is restarted and the heat treatment as set is continued. The instantaneous blackout is between t1 second and t2 seconds, and this instantaneous blackout is T in the time schedule described above with reference to FIG.
After 1 minute and within T2 minutes, that is, the second step before the second
During the processing step, the momentary blackout time set in advance corresponding to the processing conditions and the like in the processing apparatus plus a predetermined timing of the heat treatment step, which is a predetermined time before, for example, the start point of the first step or the first step. Return to the start point of step 2 and start again. Alternatively, the timing is returned to the preset timing before the occurrence of the instantaneous blackout during the second step, that is, the processing time of the second step is substantially extended. The instantaneous blackout is between t1 seconds and t2 seconds, and this instantaneous blackout is the time schedule shown in FIG.
If T3 minutes after T2 minutes, that is, during the main processing step of the third step, which is the second setting step, the heat treatment step is stopped and the semiconductor to be processed becomes a defective product. A boat (not shown) is lowered and the semiconductor wafer-2 is lowered from the boat (not shown), taken out of the heat treatment furnace 1, and subjected to a predetermined discharge process. If the instantaneous blackout is from t1 second to t2 second, and the instantaneous blackout is after T3 minutes in the time schedule described above with reference to FIG. 2, that is, during the post-treatment step which is the fourth or fifth step, Ignore the instantaneous blackout and restart this heat treatment after the instantaneous blackout is completed, and continue the heat treatment as set. Instantaneous stop is t2 seconds or more, for example 5
If it continues for more than a second, the heat treatment process is stopped regardless of the state of the heat treatment process, and the semiconductor to be processed becomes a defective product,
A boat (not shown) is lowered by a mechanism (not shown) and the semiconductor wafer-2 is lowered from the boat (not shown), taken out of the heat treatment furnace 1 and subjected to a predetermined discharge process.

Embodiment 2 In FIG. 4, this semiconductor processing apparatus starts its operation and t1 which is a first predetermined time.
If there is an instantaneous blackout within a second, for example, 0.5 seconds, this instantaneous blackout is ignored, and after the instantaneous blackout is completed, this heat treatment is restarted and the heat treatment as set is continued. The instantaneous blackout is t1 seconds or more and within a second predetermined time t2 seconds, for example, within 5 seconds,
This instantaneous blackout is the state of the set temperature τ1 degree in the time schedule shown in FIG. 2, that is, the first setting step
If it occurs during the first treatment process before the process of, the instantaneous blackout is ignored,
After the instantaneous power failure is completed, this heat treatment is restarted and the heat treatment as set is continued. The instantaneous blackout is between t1 second and t2 seconds, and this instantaneous blackout is the time schedule described above with reference to FIG.
In the case where the temperature is set to τ2 ° C. and the temperature is within T2 minutes, that is, during the previous second processing step, which is the second step, the instantaneous interruption set in advance corresponding to the processing conditions and the like in this processing apparatus is performed. A predetermined timing of this heat treatment step, which is a time plus a certain time before, is returned to the start point of the first step or the start point of the second step and restarted. Alternatively, the timing is returned to the preset timing before the occurrence of the instantaneous blackout during the second step, that is, the processing time of the second step is substantially extended. The instantaneous blackout is t1 seconds or more and t2 seconds or less, and this instantaneous blackout is in the state of the set temperature τ2 degrees in the time schedule described above with reference to FIG.
In the case of the subsequent process, which is the fourth or fifth process after the minute, the instantaneous blackout is ignored, and after the instantaneous blackout is completed, this heat treatment is restarted and the heat treatment as set is continued. The instantaneous blackout is t1 second or more and t2 seconds or less, and the instantaneous blackout is neither the set temperature τ1 nor the set temperature τ2 in the time schedule described above with reference to FIG. 2, that is, the third step which is the second setting step. If it occurs during the set temperature of τ3 degrees for the main processing step, the heat treatment step is stopped to make the semiconductor to be processed defective, and the boat (not shown) is lowered by a mechanism (not shown) (see FIG. The semiconductor wafer-2 is unloaded from (not shown) and taken out of the heat treatment furnace 1 to perform a predetermined discharge process. Further, if the instantaneous blackout continues for t2 seconds or longer, for example, 5 seconds or longer, the heat treatment step is stopped to make the semiconductor to be defective in any state of the heat treatment step, and a mechanism not shown in the figure
The semiconductor wafer-2 is lowered from the boat (not shown) and taken out of the heat treatment furnace 1 to perform a predetermined discharge process.

Both the first and second embodiments correspond to the conditions of the time schedule described above with reference to FIG. 2, and the first and second instantaneous blackout durations and the first and second It is needless to say that the instantaneous blackout handling process including the setting of the setting process may be appropriately set according to the progress of the heat treatment and the heat treatment conditions such as the conditions of the semiconductor to be processed. For example,
The processing content for the instantaneous blackout time corresponding to the processing step condition may be appropriately set by dividing the time condition of the instantaneous blackout time into more detailed divisions than the setting example of the setting step described above. Also, rather than setting the conditions according to the processing steps, the judgment steps are subdivided according to the measurement data in the heat treatment furnace and the progress state of the processing contents of the semiconductor to be processed that are understood in advance, and the judgment steps are divided. It suffices to set each process of continue, return, and stop as it is according to the condition. The return process described above also corresponds to the above-described determination conditions set corresponding to the instantaneous blackout duration time, the instantaneous blackout occurrence timing, etc., and the predetermined timing of this heat treatment step that is before the instantaneous blackout time plus a certain time is described above. Select and set as described above.

Third Embodiment Next, a third embodiment will be described with reference to FIGS. 5 to 9 show items used for the determination for determining the processing content at the time of the instantaneous power failure. Figure 5 shows the weight of the semiconductor to be processed,
The abscissa represents the weight of the material to be treated, which is below the standard, and is light, medium, and full, and the ordinate represents the actual condition inside the processing furnace, which corresponds to the abscissa, as a family function whose basic state is 1. There is. Fig. 6 shows the duration of instantaneous power failure. The horizontal axis shows the duration of power failure in three stages of minute time, short time, and long time, and the vertical axis shows the actual condition inside the processing furnace corresponding to the horizontal axis. It is indicated by a family function whose state is 1. 6A and 6B show different family function setting examples. Although the reference value of the minute time is classified into two stages of t1, for example, 0.5 seconds and t2, for example, 5 seconds in the above-mentioned embodiment, it is classified into three stages in this embodiment. FIG. 7 is a time flow chart for determining the temperature inside the furnace corresponding to the set temperature at the time of occurrence of the instantaneous power failure. The horizontal axis represents the set temperature switching timing of τ1, τ2, τ3 shown in FIG. 2 with the passage of time. Therefore, the vertical axis shows the furnace temperature corresponding to each set temperature as a family function in which the temperature equal to the set temperature is 1. FIG. 8 is a time flow chart for determining the furnace gas condition corresponding to the set gas of the furnace atmosphere at the timing of occurrence of the instantaneous power failure, and the atmosphere gas switching of N ₂ and SiH ₄ shown in FIG. 2 with the passage of time. The horizontal axis represents the timing, and the vertical axis represents the state of the in-furnace gas corresponding to each atmospheric gas as a family function in which the state filled with a predetermined gas is 1. FIG. 9 is a time flow chart for determining the reaction progress status of the semiconductor to be processed at the timing of occurrence of the instantaneous power failure. The reaction of the semiconductor to be processed in the main processing step (third step described in the previous example) The progress status and the degree of progress of each processing step are shown in the same figure, and the first step, which is the first step described in detail in the previous embodiment, with the passage of time
Switching of the treatment process, the second pre-treatment process as the second process, the main treatment process as the third process, the rear first treatment process as the fourth process, and the rear second treatment process as the fifth process. The horizontal axis represents the timing, and the vertical axis represents the progress of each process with a dotted line. The progress of the process reaction in this process is divided into four stages from unfinished to complete, and the standard state of each stage is set to 1. Family functions are shown by solid lines.

Any of the conditions shown in FIGS. 5 to 9 (FIG. 6 is either (A) or (B)) corresponding to the conditions of the heat treatment furnace, the conditions of the semiconductor to be processed, the conditions of the processing specifications, etc. Alternatively, the center of gravity of the result obtained by fuzzy inference using all or other necessary conditions is obtained, and the processing after the instantaneous power failure of the heat treatment furnace is executed according to the processing determination standard corresponding to the position of the center of gravity that is defined separately. . Similar to the previous embodiment, this processing judgment criterion is the timing at which the instantaneous blackout is disregarded and the processing is continued as it is, that is, the predetermined timing of this heat treatment step which is before the instantaneous blackout time plus a certain time, for example, the start of all steps -Restart after returning to the start point or the start point of the process in progress. Or return to the preset timing before the occurrence of the instantaneous blackout in the ongoing process, that is,
It suffices to appropriately set instructions such as substantially extending the processing time of the process in progress and treating the semiconductor to be processed as a defective product. The setting contents of the above family function is 1
This is an example, and the instantaneous blackout handling process should be set appropriately in accordance with the function of the semiconductor processing device, the time schedule of the heat treatment, and the conditions and processing specifications of the semiconductor to be processed. Is natural.

Embodiment 4 The deterministic processing of Embodiments 1 and 2 and the fuzzy inference processing shown in Embodiment 3 are combined. For example, a fuzzy inference process is performed until a predetermined condition of the reaction progress status in the above-described process, for example, the completion of this process, and a deterministic process is performed after the above-described predetermined condition, for example, in a post-processing step after the execution of this process. Run.

The above description shows the basic method for realizing the technical idea of the present invention, and it is needless to say that it can be variously applied and modified. For example, when the determination condition of the processing content is simple, the fuzzy inference processing in the third embodiment may be replaced with a means that combines the analog processing and the determination function. Further, the setting of the first and second instantaneous blackout durations and the processing items corresponding to the instantaneous blackout times are described in terms of the functions of the semiconductor processing apparatus to which the present invention is applied, the configuration and control method of the control apparatus of the semiconductor processing apparatus, Material conditions and dimensions of treated semiconductors,
Basic conditions such as processing contents and processing characteristics for the semiconductor to be processed by the semiconductor processing apparatus, reaction progress status of the processing target material at the time of instantaneous blackout occurrence, processing amount of the processing target semiconductor, specification conditions of the processing, and capacity of the processing furnace. It is only necessary to select and set necessary conditions appropriately according to the relationship with the above, the situation such as the number of times of occurrence of instantaneous blackout during the same processing, etc. The processing items also correspond to the settings of the first and second setting steps, and the instantaneous blackout is ignored and the processing is performed as set, the processing is returned to a certain time before the instantaneous blackout occurrence timing, that is, the start of processing. Return to the time point and execute the process from the beginning of the setting process, return to the start time of the process step and repeatedly execute the process step, extend the process time by a momentary blackout time plus a certain time (zero depending on the condition) That is, it suffices to appropriately set an instruction such as extending the processing time by a certain amount of time, stopping the processing, and processing the semiconductor to be processed into a predetermined defect.

[0022]

Since the present invention has the above-mentioned method,
It has the following excellent effects. Corresponding to the duration and the timing of occurrence of the instantaneous power failure, the optimal processing time for the situation and the waste prevention of the semiconductor to be processed are automatically executed, and the heat treatment work process can be protected. Appropriate work corresponding to the progress of the heat treatment process and the limiting conditions is selected and executed, so that the product yield is improved. Therefore, it is possible to prevent defective processing of the semiconductor to be processed and protect the material. It does not affect the case where a plurality of semiconductor processing devices are operated in parallel. Since it is not necessary for the worker to perform the emergency correction work, the number of workers can be reduced. The protection method of the present invention can be appropriately set and executed individually in accordance with the conditions of the processing apparatus and the semiconductor to be processed. (1) The influence of the instantaneous blackout can be made zero by ignoring the instantaneous blackout within approximately 0.5 seconds. (2) If there is an instantaneous blackout of approximately 0.5 seconds or more in a predetermined process, the process after the instantaneous blackout is not wasted if the processed semiconductor being processed is treated as a defective product. (3) For a momentary blackout within a preset time in a predetermined process before entering a preset processing step, it is preset in accordance with preset conditions such as a processing device, a semiconductor to be processed, and a momentary blackout occurrence time. If the process is returned to the predetermined process before the instantaneous blackout time plus a fixed time and restarted, the heat treatment is completed with the shortest time treatment that can eliminate the effect of the instantaneous blackout. (4) By setting the instantaneous blackout within the preset time to approximately 5 seconds or less, it is possible to execute a process with a high possibility of controlling the generation of defective products in the semiconductor to be processed. (5) By ignoring the instantaneous blackout within about 5 seconds in a predetermined process after the processing process set in advance corresponding to the conditions of the processing apparatus and the semiconductor to be processed, the effect of the instantaneous blackout can be reduced to zero. (6) If there is an instantaneous blackout of approximately 5 seconds or more, if the semiconductor being processed is treated as a defective product, the steps after the instantaneous blackout are not wasted.

[Brief description of drawings]

FIG. 1 is a configuration example of a control function of a semiconductor processing device to which a method for protecting against instantaneous power failure of a semiconductor processing device according to the present invention is applied.

2 is a time schedule diagram showing an example of control condition setting in the semiconductor processing apparatus shown in FIG.
Shows the temperature setting state, and FIG. 6B shows the exchange state of the atmospheric gas.

FIG. 3 is a process flow example diagram showing a process operation in the first embodiment at the time of a momentary power failure (instantaneous power failure) according to the present invention with reference to the time schedule showing the control condition setting example shown in FIG.

FIG. 4 is a process flow chart showing a processing operation in a second embodiment at the time of a momentary power failure (instantaneous power failure) according to the present invention with reference to a time schedule showing an example of setting control conditions shown in FIG.

FIG. 5 is a family function setting example diagram showing a family function with respect to a loading weight (treatment weight) of a material to be treated, which explains the third embodiment.

FIG. 6 is a diagram illustrating a family function setting example with respect to a power failure (instantaneous blackout) time for explaining a third embodiment, and FIGS. 6A and 6B show different setting examples.

FIG. 7 is a schematic time-flow diagram showing a family function change with respect to the temperature inside the heat treatment furnace corresponding to the set temperature in the set time schedule shown in FIG. 2 in the heat treatment furnace explaining the third embodiment.

FIG. 8 is a schematic time-flow diagram showing a family function change with respect to the atmosphere in the heat treatment furnace corresponding to the set atmosphere gas in the set time schedule shown in FIG. 2 in the heat treatment furnace for explaining the third embodiment.

FIG. 9 is a time flow chart for explaining the reaction progress situation of the semiconductor to be processed at the timing of occurrence of the instantaneous blackout, which explains the third embodiment.

FIG. 10 is a configuration example of a conventional control function of a semiconductor processing apparatus to which the present invention is applied.

FIG. 11 is a time schedule diagram showing an example of control condition setting in the semiconductor processing apparatus shown in FIG. 10, where FIG. 11A shows a temperature setting state and FIG. Is shown.

[Explanation of symbols]

 1: Heat treatment furnace 2: Semiconductor to be processed 3: Heater 4: Transformer 5: Switching function 6: Temperature sensor 7: Temperature control function 10: Control device 11: Power failure detection function

Claims (7)

[Claims] 1. A semiconductor processing apparatus that performs a heat treatment in a predetermined heating process in a predetermined atmosphere, wherein a control condition set in advance in the processing apparatus is set in advance in accordance with conditions of the processing apparatus and the semiconductor to be processed. The instantaneous power failure within the first predetermined time is ignored, and the semiconductor being processed is defective if the instantaneous power failure is longer than the second predetermined time set in advance corresponding to the conditions of the processing device and the semiconductor to be processed. And a first setting step that is set in advance in response to the conditions of the processing apparatus and the semiconductor to be processed, etc., for an instantaneous power failure at an intermediate time between the first predetermined time and the second predetermined time. Ignore this momentary power failure, and treat the semiconductor being processed as a defective product during the second setting step that has been preset corresponding to the conditions of the processing device and the semiconductor to be processed,
In the processes other than the above-mentioned setting process, the process is restarted by returning to the predetermined process of a momentary power failure time plus a certain period of time depending on the conditions such as the processing apparatus, the semiconductor to be processed, and the progress of the processing process. A method for protecting a semiconductor manufacturing apparatus from a momentary power failure of a power supply. 2. In a semiconductor processing apparatus that performs heat treatment in a predetermined heating process in a predetermined atmosphere, instantaneous power failure within approximately 0.5 seconds is ignored under temperature control conditions preset in the processing apparatus. A method for protecting a semiconductor manufacturing apparatus from a momentary power failure of a power supply. 3. A semiconductor processing apparatus for performing heat treatment by a predetermined heating step in a predetermined atmosphere, wherein the processing step set in advance corresponding to the conditions of the processing apparatus and the semiconductor to be processed is approximately 0.5 seconds or more. If there is a momentary power failure, the semiconductor device being processed is treated as a defective product. 4. A semiconductor processing apparatus for performing a heat treatment in a predetermined heating process in a predetermined atmosphere, in advance, under a temperature control condition preset in the processing apparatus, corresponding to the conditions of the processing apparatus and the semiconductor to be processed. If there is an instantaneous power failure within a preset time in the specified process before entering the set processing process, it is set in advance corresponding to the processing device, the semiconductor to be processed, the process condition at the time of the instantaneous power failure, and the like. A method for protecting an instantaneous power failure of a semiconductor manufacturing apparatus, which is characterized by returning to a predetermined process before an instantaneous power failure time plus a predetermined time and restarting. 5. The method for protecting an instantaneous power failure of a semiconductor manufacturing apparatus according to claim 4, wherein the instantaneous power failure within a preset time is within about 5 seconds. 6. In a semiconductor processing apparatus for performing heat treatment in a predetermined heating step in a predetermined atmosphere, approximately 5 seconds in a predetermined step after the processing step preset corresponding to the conditions of the processing apparatus and the semiconductor to be processed and the like. A method for protecting semiconductor manufacturing equipment from a momentary power failure, characterized by ignoring the momentary power failure within. 7. A semiconductor processing apparatus for performing heat treatment in a predetermined heating process in a predetermined atmosphere, wherein if there is a momentary power failure for about 5 seconds or more, the semiconductor being processed is treated as a defective product. A method for protecting a semiconductor manufacturing apparatus from a momentary power failure of a power supply.