JPH07198935A - Selecting method of temperature coefficient for wavelength shift of multilayer film filter and multilayer film filter having almost zero temperature coefficient of wavelength shift - Google Patents

Selecting method of temperature coefficient for wavelength shift of multilayer film filter and multilayer film filter having almost zero temperature coefficient of wavelength shift

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Publication number
JPH07198935A
JPH07198935A JP35125893A JP35125893A JPH07198935A JP H07198935 A JPH07198935 A JP H07198935A JP 35125893 A JP35125893 A JP 35125893A JP 35125893 A JP35125893 A JP 35125893A JP H07198935 A JPH07198935 A JP H07198935A
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JP
Japan
Prior art keywords
temperature coefficient
wavelength shift
substrate
coefficient
linear expansion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP35125893A
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Japanese (ja)
Other versions
JP3243474B2 (en
Inventor
Haruo Takahashi
高橋晴夫
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KOSHIN KOGAKU KK
Original Assignee
KOSHIN KOGAKU KK
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Abstract

PURPOSE:To decide the temp. coefft. of wavelength shift of a multilayered film filter according to decision of the coefft. of linear expansion of a substrate and to obtain a multilayered film filter having almost zero temp. coefft. of wavelength shift. CONSTITUTION:Dense multilayer films are formed on different substrates by vapor deposition by an ion or plasma process. The temp. coefft. of wavelength shift of each multilayer film is plotted on the coordinate of linear expansion coefft.-temp. coefft. of wavelength shift. Based on the obtd. plot, the temp. coefft. shift line intrinsic to each multilayer film is obtd. The substrate for a multilayer film having a specified temp. coefft. of wavelength shift is selected according to this temp. coefft. shift line. Further, by using a substrate having coefft. of linear expansion of 75-150(1/10<7>), a multilayered filter having almost zero temp. coefft. of wavelength shift is obtd. Thereby, the temp. coefft. of wavelength shift can be determined from the temp. coefft. shift line. A multilayered filter having almost zero temp. coefft. of wavelength shift can be obtd. by using a substrate having the coefft. of linear expansion in a specified range.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光通信等に使用される多
層膜フィルタの波長シフト温度係数選定方法に関する。
多層膜固有の線膨張係数−波長シフト温度係数座標等を
基にして所望の波長シフト温度係数値を選定し,特に波
長シフト温度係数が略ゼロの多層膜フィルタを提供す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wavelength shift temperature coefficient selecting method for a multilayer filter used for optical communication or the like.
A desired wavelength shift temperature coefficient value is selected on the basis of the coefficient of linear expansion peculiar to a multilayer film-wavelength shift temperature coefficient coordinate, and in particular, a multilayer filter having a wavelength shift temperature coefficient of substantially zero is provided.

【0002】[0002]

【従来の技術】TiO2やSiO2等の誘電体皮膜を石英等の基
板上に積層した多層膜バンドパスフィルタ(以下多層膜
フィルタと称する)は,真空チャンバー内で250 ℃に加
熱された基板上に電子ビームによって蒸着される。この
場合の多層膜は充填密度が低く(換言すればスカス
カ),膜構造は柱状構造を呈する。使用環境下では水分
が多層膜内を吸脱着して膜の屈折率を変化させ,波長シ
フト温度係数の変動をもたらす。昇温時にはピーク透過
波長は短波長側にシフトし,降温時には長波長側にシフ
トする。稠密多層膜を提供するためイオンアシスト法,
イオンプレーティング法やイオンビームスパッター法等
のイオン−プラズマプロセス蒸着法が採用される。高充
填密度の多層膜フィルタは湿度の影響から開放される
が,狭帯域多層膜フィルタでは温度によるピーク波長シ
フトの課題が残る。
2. Description of the Related Art A multilayer bandpass filter (hereinafter referred to as a multilayer filter) in which a dielectric film such as TiO 2 or SiO 2 is laminated on a substrate such as quartz is a substrate heated to 250 ° C. in a vacuum chamber. It is vapor-deposited by an electron beam on the top. In this case, the multi-layered film has a low packing density (in other words, scathers), and the film structure has a columnar structure. In the environment of use, moisture absorbs and desorbs in the multilayer film, changing the refractive index of the film, which causes fluctuations in the wavelength shift temperature coefficient. The peak transmission wavelength shifts to the short wavelength side when the temperature rises, and shifts to the long wavelength side when the temperature falls. Ion-assisted method to provide dense multilayer film,
An ion-plasma process vapor deposition method such as an ion plating method or an ion beam sputtering method is adopted. High packing density multilayer filters are released from the influence of humidity, but narrow band multilayer filters still have the problem of peak wavelength shift due to temperature.

【0003】[0003]

【発明が解決しようとする課題】今日では稠密波長多重
通信やコヒーレント光通信が採用される。イオン−プラ
ズマプロセス法による狭帯域多層膜フィルタは,周囲温
度の変動に応じて透過ピーク波長がシフトするため,波
長シフト温度係数が略ゼロの多層膜フィルタへの要望が
極めて強い。多層膜自身の素材や物性そして蒸着方法等
を模索しているが,屈折率の温度係数に難渋している。
本発明者は基板の線膨張係数に着目し,基板から多層膜
への体積歪みを考慮した波長シフト温度係数選定理論を
確立することで,波長シフト温度係数が略ゼロの多層膜
フィルタの提供を図る。
Today, dense wavelength division multiplexing communication and coherent optical communication are adopted. Since the transmission peak wavelength of the narrow band multilayer filter by the ion-plasma process method shifts according to the fluctuation of the ambient temperature, there is an extremely strong demand for a multilayer filter having a wavelength shift temperature coefficient of almost zero. We are looking for materials, physical properties, vapor deposition methods, etc. of the multi-layer film itself, but the temperature coefficient of the refractive index is difficult.
The inventors of the present invention focused on the linear expansion coefficient of the substrate and established a theory for selecting a wavelength shift temperature coefficient in consideration of volumetric strain from the substrate to the multilayer film, thereby providing a multilayer filter having a wavelength shift temperature coefficient of substantially zero. Try.

【0004】[0004]

【課題を解決するための手段】多層膜自身の屈折率の温
度係数や,熱膨張による膜厚変動以外に,基板の熱膨張
による多層膜への体積歪みをも考慮し,波長シフト温度
係数値が基板の線膨張係数値に対して単調減少する関係
を踏まえて基板の線膨張係数を決定し,所望の波長シフ
ト温度係数値を有する多層膜フィルタを提供する。線膨
張係数値が75乃至150(/107) の範囲内にある基板上に,
TiO2とSiO2皮膜あるいはTa2O5 とSiO2皮膜を交互に繰り
返し積層して,波長シフト温度係数が略ゼロの多層膜フ
ィルタを作製する。
[Means for Solving the Problems] In addition to the temperature coefficient of the refractive index of the multilayer film itself and the film thickness fluctuation due to thermal expansion, the volume distortion of the multilayer film due to the thermal expansion of the substrate is also taken into consideration, and the wavelength shift temperature coefficient value The linear expansion coefficient of the substrate is determined in consideration of the monotonically decreasing relationship with the linear expansion coefficient value of the substrate, and a multilayer filter having a desired wavelength shift temperature coefficient value is provided. On a substrate with a linear expansion coefficient value in the range of 75 to 150 (/ 10 7 ),
TiO 2 and SiO 2 films or Ta 2 O 5 and SiO 2 films are alternately and repeatedly laminated to fabricate a multilayer filter with a wavelength shift temperature coefficient of almost zero.

【0005】[0005]

【作用】第1図は基板線膨張係数−波長シフト温度係数
座標であり,各多層膜毎の温度係数シフト直線a 〜d が
描かれている。例えば, 直線a の多層膜を波長シフト温
度係数が略0の多層膜フィルタにするには,線膨張係数
が110/107 近傍をとる基板を採用すれば良い。基板の線
膨張係数に比例して波長シフト温度係数が単調減少する
ことが理解される。基板の熱膨張による多層膜への体積
歪みを考慮した,体積歪みモデルを以下説明する。温度
t0及びt の時の蒸着膜の膜としての平均屈折率をn0,n
t , 蒸着膜の蒸着物質の部分の平均屈折率をN0, N t ,
蒸着膜の充填密度をP0,Pt , 蒸着膜の厚さをd0,d t ,
ある一定の薄膜の領域内の立方体の体積をV0,Vt とす
る。多層膜のポアソン比をs,平均線膨張係数をβ,屈折
率の温度係数をδとし,基板の線膨張係数をαとする。 n0 = N0P0 +1 −P0 V t=V0〔1+2( α−β) ×(1−2 s )/(1−s ) +3 β ] これより, P t =P0(1+3 β)/[1+3 β+2(α−β)(1 −2 s )/(1−s )] d t =d0[1−2s( α−β)(1 −s ) +β ] ここで屈折率の温度係数,δ=(1÷N)(dN/dt) と定義す
ると, nt =N t P t +1 −P t=(N0 +N0δ)P t+1 −P t これより, 多層膜フィルタの波長λでの波長シフト温度
係数(TSC) は, TSC =λ・Δ( nd)/ n0 =nt d t / n0 d0−1・・・・ で表される。第2 図は式に基づいて,屈折率の温度係
数依存性(δ)を調べた計算結果である。充填密度P =
1.0 ,ポアソン比s =0, 膜の線膨張係数β=1/107,平
均屈折率N =1.85に採る。第1 図の実験結果と見比べる
と,屈折率の温度係数は略1 .0/105程度の値を採ること
が理解される。波長シフト温度係数が基板の線膨張係数
に比例して単調減少するこの計算結果は,基板の熱膨張
による多層膜への体積歪みを考慮した体積歪みモデルの
正しさの証左となる。
OPERATION FIG. 1 shows the coordinates of the substrate linear expansion coefficient-wavelength shift temperature coefficient, and the temperature coefficient shift straight lines a to d for each multilayer film are drawn. For example, the wavelength shift temperature coefficient multilayer films of the straight line a is a multilayer film filter of substantially zero coefficient of linear expansion may be employed substrate taking 110/10 7 neighborhood. It is understood that the temperature coefficient of wavelength shift monotonically decreases in proportion to the linear expansion coefficient of the substrate. A volume strain model considering the volume strain to the multilayer film due to the thermal expansion of the substrate will be described below. temperature
The average refractive index of the deposited film at t 0 and t is n 0 , n
t , the average refractive index of the vapor deposition material portion of the vapor deposition film is N 0 , N t ,
The packing density of the deposited film is P 0 , P t , and the thickness of the deposited film is d 0 , d t ,
The volume of the cube in a certain thin film region is V 0 , V t . The Poisson's ratio of the multilayer film is s, the average linear expansion coefficient is β, the temperature coefficient of the refractive index is δ, and the linear expansion coefficient of the substrate is α. n 0 = N 0 P 0 +1 −P 0 V t = V 0 [1 + 2 (α−β) × (1−2 s) / (1−s) +3 β] From this, P t = P 0 (1 + 3 β ) / [1 + 3 β + 2 (α−β) (1−2 s) / (1−s)] d t = d 0 [1−2 s (α−β) (1 −s) + β] where temperature of refractive index coefficients, when defined as δ = (1 ÷ n) ( dN / dt), from which n t = n t P t +1 -P t = (n 0 + n 0 δ) P t +1 -P t, the multilayer filter The wavelength shift temperature coefficient (TSC) at the wavelength λ is represented by TSC = λ · Δ (nd) / n 0 = n t d t / n 0 d 0 −1. Figure 2 shows the calculation results of the dependence of the refractive index on the temperature coefficient (δ) based on the equation. Packing density P =
1.0, Poisson's ratio s = 0, coefficient of linear expansion of film β = 1/10 7 , average refractive index N = 1.85. Comparing with the experimental results in Fig. 1, it is understood that the temperature coefficient of the refractive index takes a value of about 1.0 / 10 5 . This calculation result, in which the temperature coefficient of wavelength shift monotonically decreases in proportion to the linear expansion coefficient of the substrate, is the proof of the correctness of the volume strain model considering the volume strain to the multilayer film due to the thermal expansion of the substrate.

【0006】[0006]

【実施例】多層膜フィルタの基板の線膨張係数を横軸に
とり,透過ピーク波長の波長シフト温度係数(TSC) を縦
軸にとった線膨張係数−波長シフト温度係数座標を第1
図に示す。同図における温度係数シフト直線a は, TiO2
/SiO2を交互に繰り返し33層積層した多層膜(キャビテ
ィ層は一次の共振器長を有し,SiO2で作製され,半値幅
は約0.5nm)の波長シフト温度係数直線である。この多層
膜は表1 に記載された各基板にそれぞれ蒸着されて各多
層膜フィルタが作製される。各多層膜フィルタを20℃と
60℃の2 点で透過ピーク波長を測定し, その結果の波長
シフト温度係数を同図にプロット( 〇印) する。このプ
ロットを基にして上記温度係数シフト直線a が作成され
る。二個のプロット点があれば一応は温度係数シフト直
線を描くことができる。
EXAMPLE The coefficient of linear expansion of the substrate of the multilayer filter is plotted on the horizontal axis, and the coefficient of wavelength shift (TSC) of the transmission peak wavelength is plotted on the axis of ordinate.
Shown in the figure. The temperature coefficient shift line a in the figure is TiO 2
This is a wavelength shift temperature coefficient straight line of a multilayer film in which 33 layers of / SiO 2 are alternately repeated (the cavity layer has a primary cavity length, is made of SiO 2 , and the half-value width is about 0.5 nm). This multilayer film is vapor-deposited on each substrate shown in Table 1 to produce each multilayer filter. 20 ° C for each multilayer filter
The transmission peak wavelength is measured at two points at 60 ° C, and the resulting wavelength shift temperature coefficient is plotted (marked with a circle) in the same figure. The temperature coefficient shift line a is created based on this plot. If there are two plot points, it is possible to draw a temperature coefficient shift straight line.

【表1】 次に,TiO2/SiO2が交互に31層繰り返し積層して多層
膜を作成する。上記実施例との違いは,一次の共振器長
を有するキャビティ層にTiO2を採用した点である。設計
中心波長は1540nmで半値巾は約1.0nm である。この多層
膜が蒸着される基板( 表1 に記載された各基板) 毎の波
長シフト温度係数を同じように測定して, 第1 図にプロ
ット( ●印) した。これら各点から温度係数シフト直線
b が求められる。両温度係数シフト直線a,b の違いは,
キャビティ層であるSiO2とTiO2の屈折率の温度係数の差
に起因する。Ta2O5 /SiO2を41層繰り返し交互に積層
し,一次の共振器長を有するキャビティ層にSiO2を採用
した多層膜の場合には,温度係数シフト直線cが描かれ
る。各プロット(△印)からこの直線cは求められる。
同じように,Ta2O5 /SiO2を39層繰り返し交互に積層
し,一次の共振器長を有するキャビティ層にTa2O5 を採
用した多層膜の場合には,温度係数シフト直線dが描か
れる。各プロット(□印)からこの直線dは求められ
る。両温度係数シフト直線c,dの違いは,キャビティ
層の違いである。一方のキャビティ層のSiO2よりもTa2O
5 の方が屈折率の温度係数が若干大きいためである。こ
れらの測定結果及び上記式から,線膨張係数の大きな
基板に蒸着された多層膜は,基板の熱膨張係数に引きず
られ様に,膜自身が二次元的に広がり,その結果体積歪
みを生じて,充填密度が低下し,波長シフト温度係数が
変動するという体積歪み理論が導かれる。
[Table 1] Next, 31 layers of TiO 2 / SiO 2 are alternately laminated to form a multilayer film. The difference from the above example is that TiO 2 was used for the cavity layer having the primary cavity length. The design center wavelength is 1540 nm and the half-width is about 1.0 nm. The wavelength shift temperature coefficient was similarly measured for each substrate (each substrate described in Table 1) on which this multilayer film was deposited and plotted in Fig. 1 (marked with ●). Temperature coefficient shift line from each of these points
b is required. The difference between the two temperature coefficient shift lines a and b is
This is due to the difference in temperature coefficient of refractive index between SiO 2 and TiO 2 which are cavity layers. In the case of a multilayer film in which 41 layers of Ta 2 O 5 / SiO 2 are repeatedly laminated alternately and SiO 2 is used for the cavity layer having the primary cavity length, the temperature coefficient shift line c is drawn. This straight line c can be obtained from each plot (marked with Δ).
Similarly, in the case of a multilayer film in which Ta 2 O 5 / SiO 2 is repeatedly laminated 39 layers alternately and Ta 2 O 5 is used for the cavity layer having the primary cavity length, the temperature coefficient shift line d is be painted. This straight line d can be obtained from each plot (square mark). The difference between the two temperature coefficient shift lines c and d is the difference in the cavity layers. Ta 2 O rather than SiO 2 in one cavity layer
This is because 5 has a slightly higher temperature coefficient of refractive index. From these measurement results and the above equation, in the multilayer film deposited on the substrate with a large linear expansion coefficient, the film itself spreads two-dimensionally as if it was dragged by the thermal expansion coefficient of the substrate, resulting in volume distortion. , The volume strain theory that the packing density decreases and the wavelength shift temperature coefficient fluctuates.

【0007】第1図の温度係数シフト直線a〜dから,
波長シフト温度係数値は基板の線膨張係数値に対して単
調減少することが理解される。ある波長シフト温度係数
を有する多層膜フィルタは,この直線をから導かれる多
層膜の種類と基板の線膨張係数選定によって可能にな
る。波長シフト温度係数が略ゼロの多層膜フィルタを作
製するには,線膨張係数値が75乃至150(/107) の範囲内
にある基板上に,TiO2/SiO2皮膜あるいはTa2O5 /SiO2
皮膜を交互に繰り返し積層すれば良い。
From the temperature coefficient shift straight lines a to d in FIG.
It is understood that the wavelength shift temperature coefficient value decreases monotonically with the linear expansion coefficient value of the substrate. A multilayer filter having a certain wavelength shift temperature coefficient can be obtained by selecting the type of multilayer film derived from this straight line and the linear expansion coefficient of the substrate. To fabricate a multilayer filter with a wavelength shift temperature coefficient of almost zero, a TiO 2 / SiO 2 film or Ta 2 O 5 film should be formed on a substrate with a coefficient of linear expansion within the range of 75 to 150 (/ 10 7 ). / SiO 2
The films may be laminated alternately and repeatedly.

【0008】TiO2,SiO2,Ta2O5 を蒸着皮膜として説明
してきたが,Ta2O5/SiO2/ Al2O3 あるいはTiO2/SiO2/ A
l2O3 を交互に繰り返し積層した多層膜の場合も, 温度
係数シフト直線a 〜d と略同じ傾向を有する。このAl2O
3 に限らず多層膜フィルタの設計透過ピーク波長に応じ
た皮膜が適宜採用される。これまでの実施例の蒸着物質
は,SiO2,TiO2,Ta2O5 ,Al2O3 であるが,その他に
は,ZrO2, Si, ZnS,HfO,Ge ,Nd2O6 ,Nb2O5 ,CeO2 が選
択採用される。特に, Ge( ゲルマニューム) 皮膜からな
る波長シフト温度係数が略ゼロの長波長用フィルタは,
宇宙観測機器用として期待される。これらの蒸着物質を
加速電子やイオンによってスパッターし,選定された基
板上に直接或いはプラズマ領域を通過して蒸着させる。
イオンガンによって酸素や窒素イオンを蒸着膜に照射す
る。基板は蒸発物質からの輻射熱により100 〜120 ℃に
昇温する。このイオンあるいはプラズマプロセス法によ
る多層膜は, 充填密度が略1 に近い稠密膜となる。充填
密度がこのように高い皮膜ゆえに,多層膜は基板の線膨
張係数による体積歪みを受け,充填密度の低下を招き,
波長シフト温度係数が変動する。充填密度が極めて低い
皮膜( スカスカ状態) の多層膜フィルタでは,波長シフ
ト温度係数が基板の線膨張係数から受ける影響は小さ
い。
Although TiO 2 , SiO 2 , and Ta 2 O 5 have been described as vapor-deposited films, Ta 2 O 5 / SiO 2 / Al 2 O 3 or TiO 2 / SiO 2 / A
In the case of a multilayer film in which l 2 O 3 is alternately and repeatedly laminated, the temperature coefficient shift lines a to d have almost the same tendency. This Al 2 O
Not limited to 3 , a film suitable for the design transmission peak wavelength of the multilayer filter is appropriately adopted. The vapor deposition materials in the above examples are SiO 2 , TiO 2 , Ta 2 O 5 , and Al 2 O 3 , but in addition, ZrO 2, Si, ZnS, HfO, Ge, Nd 2 O 6, Nb 2 O 5 and CeO 2 are selectively adopted. In particular , a long-wavelength filter consisting of a Ge (germanium) film with a wavelength shift temperature coefficient of almost zero is
Expected for space observation equipment. These deposition materials are sputtered by accelerated electrons or ions, and deposited on the selected substrate directly or through the plasma region.
The vapor deposition film is irradiated with oxygen and nitrogen ions by an ion gun. The substrate is heated to 100 to 120 ° C by the radiant heat from the evaporated substance. The multi-layer film produced by this ion or plasma process method is a dense film with a packing density close to 1. Due to such a high packing density, the multilayer film suffers volume distortion due to the linear expansion coefficient of the substrate, leading to a decrease in packing density.
The wavelength shift temperature coefficient fluctuates. In a multilayer filter with a film (squashed state) that has an extremely low packing density, the temperature coefficient of wavelength shift is not significantly affected by the linear expansion coefficient of the substrate.

【0009】TiO2/SiO2/ Al2O3 あるいはTiO2/SiO2/ A
l2O3を交互に繰り返し積層した多層膜で,波長シフト温
度係数が略ゼロの多層膜フィルタを作製するには,温度
係数シフト直線a〜dを参照して,線膨張係数値が75乃
至150(/107) の範囲内にある基板すれば良いことにな
る。同じようにZrO2, Si, ZnS,HfO, Ge ,Nd2O6 ,Nb2O5,
CeO2 の皮膜でも,波長シフト温度係数が略ゼロの多層
膜フィルタを作製するには,線膨張係数値が75乃至150
(/107) の範囲内にある基板を採用する。もっとも,波
長シフト温度係数値の絶対値が同じでその符号(正負)
のみが異なる二種類の多層膜フィルタを合わせて使用す
れば,波長シフト温度係数は0になる。温度係数シフト
直線a〜dを参照して正負の符号のみ異なる多層膜フィ
ルタを選定できる。
TiO 2 / SiO 2 / Al 2 O 3 or TiO 2 / SiO 2 / A
In order to fabricate a multilayer film filter having a wavelength shift temperature coefficient of substantially zero, which is a multilayer film in which l 2 O 3 is alternately and repeatedly laminated, a linear expansion coefficient value of 75 to A substrate within the range of 150 (/ 10 7 ) will suffice. Similarly, ZrO 2, Si, ZnS, HfO, Ge, Nd 2 O 6, Nb 2 O 5 ,
Even with a CeO 2 film, a linear expansion coefficient of 75 to 150 is required to fabricate a multilayer filter with a wavelength shift temperature coefficient of almost zero.
Use a substrate within the range of (/ 10 7 ). However, the absolute value of the wavelength shift temperature coefficient value is the same and its sign (positive or negative)
The wavelength shift temperature coefficient becomes 0 if two kinds of multilayer filters different in only the difference are used together. With reference to the temperature coefficient shift lines a to d, it is possible to select a multilayer film filter having different positive and negative signs.

【0010】[0010]

【発明の効果】要するに,本発明は多層膜自身の屈折率
の温度係数や,熱膨張による膜厚変動以外に,基板の熱
膨張による稠密多層膜への体積歪みをも考慮し,波長シ
フト温度係数値が基板の線膨張係数値に対して単調減少
する関係を踏まえて基板の線膨張係数を決定するため,
所定の波長シフト温度係数値を有する多層膜フィルタを
選定できる。温度係数シフト直線を参照して多層膜と基
板とを選定する。特に,線膨張係数が75乃至150(/107)
の範囲内の基板を採用すれば,波長シフト温度係数が略
ゼロの多層膜フィルタを提供できる。また,ある基板の
線膨張係数が分かっていれば,多数の温度係数シフト直
線から所定の波長シフト温度係数を有する多層膜フィル
タの多層膜を決定でき,多層膜が特定されている場合に
はその多層膜フィルタの波長シフト温度係数が予め分か
る。
In summary, the present invention considers not only the temperature coefficient of the refractive index of the multilayer film itself and the film thickness variation due to thermal expansion but also the volume strain to the dense multilayer film due to the thermal expansion of the substrate, and the wavelength shift temperature. In order to determine the linear expansion coefficient of the substrate based on the relationship that the coefficient value monotonically decreases with respect to the linear expansion coefficient value of the substrate,
A multilayer film filter having a predetermined wavelength shift temperature coefficient value can be selected. The multilayer film and the substrate are selected with reference to the temperature coefficient shift straight line. Especially, the coefficient of linear expansion is 75 to 150 (/ 10 7 )
If a substrate within the range is adopted, it is possible to provide a multilayer filter having a wavelength shift temperature coefficient of substantially zero. Also, if the linear expansion coefficient of a certain substrate is known, the multilayer film of the multilayer filter having a predetermined wavelength shift temperature coefficient can be determined from a large number of temperature coefficient shift lines, and if the multilayer film is specified, the multilayer film can be determined. The wavelength shift temperature coefficient of the multilayer filter is known in advance.

【図面の簡単な説明】[Brief description of drawings]

【図1】基板の線膨張係数と多層膜フィルタの波長シフ
ト温度係数との関係を示すグラフ図である。
FIG. 1 is a graph showing a relationship between a linear expansion coefficient of a substrate and a wavelength shift temperature coefficient of a multilayer filter.

【図2】基板の線膨張係数による多層膜への体積歪みを
考慮した計算式から導かれる温度係数シフト直線であ
る。
FIG. 2 is a temperature coefficient shift straight line derived from a calculation formula that considers volume strain to a multilayer film due to a linear expansion coefficient of a substrate.

【符号の説明】[Explanation of symbols]

a 温度係数シフト直線 b 温度係数シフト直線 c 温度係数シフト直線 d 温度係数シフト直線 a temperature coefficient shift straight line b temperature coefficient shift straight line c temperature coefficient shift straight line d temperature coefficient shift straight line

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】 多層膜自身の屈折率の温度係数や,熱膨
張による膜厚変動以外に,基板の熱膨張による多層膜へ
の体積歪みをも考慮し,波長シフト温度係数値が基板の
線膨張係数値に対して単調減少する関係を踏まえて基板
の線膨張係数を決定する,多層膜フィルタの波長シフト
温度係数の選定方法。
1. The wavelength shift temperature coefficient value is a line of the substrate in consideration of the temperature coefficient of the refractive index of the multilayer film itself and the film thickness variation due to thermal expansion, as well as the volume strain to the multilayer film due to thermal expansion of the substrate. A method for selecting the wavelength shift temperature coefficient of a multilayer filter, which determines the linear expansion coefficient of the substrate based on the relationship of monotonically decreasing with respect to the expansion coefficient value.
【請求項2】 イオンあるいはプラズマプロセス法等を
用いて稠密多層膜を基板上に積層する多層膜フィルタに
於いて,波長シフト温度係数値が基板の線膨張係数値に
対して単調減少する関係を踏まえて基板の線膨張係数を
決定する,多層膜フィルタの波長シフト温度係数の選定
方法。
2. In a multilayer filter in which a dense multilayer film is laminated on a substrate by using an ion or plasma process method, the wavelength shift temperature coefficient value monotonically decreases with respect to the substrate linear expansion coefficient value. A method for selecting the wavelength shift temperature coefficient of a multilayer filter that determines the linear expansion coefficient of the substrate based on this.
【請求項3】 線膨張係数値が75乃至150(/107) の範囲
内にある基板上に,TiO2とSiO2皮膜を交互に繰り返し積
層してなる,波長シフト温度係数が略ゼロの多層膜フィ
ルタ。
To 3. A linear expansion coefficient of 75 to 150 (/ 107) on the substrate in the range of, formed by repeatedly laminating TiO 2 and SiO 2 film alternately, wavelength shift temperature coefficient of substantially zero Multilayer filter.
【請求項4】 線膨張係数値が75乃至150(/107) の範囲
内にある基板上に,Ta2O5 とSiO2皮膜を交互に繰り返し
積層してなる,波長シフト温度係数が略ゼロの多層膜フ
ィルタ。
4. The wavelength shift temperature coefficient, which is obtained by alternately and repeatedly laminating Ta 2 O 5 and SiO 2 coatings on a substrate having a linear expansion coefficient value in the range of 75 to 150 (/ 10 7 ). Zero multilayer filter.
【請求項5】 線膨張係数値が75乃至150(/107) の範囲
内にある基板上に,Ta2O5 とSiO2そしてAl2O3 皮膜を交
互に繰り返し積層してなる,波長シフト温度係数が略ゼ
ロの多層膜フィルタ。
5. A wavelength obtained by alternately laminating Ta 2 O 5 , SiO 2 and Al 2 O 3 coatings on a substrate having a coefficient of linear expansion within the range of 75 to 150 (/ 10 7 ). Multilayer filter with a shift temperature coefficient of almost zero.
【請求項6】 線膨張係数値が75乃至150(/107) の範囲
内にある基板上に,TiO2とSiO2そしてAl2O3 皮膜を交互
に繰り返し積層してなる,波長シフト温度係数が略ゼロ
の多層膜フィルタ。
6. A wavelength shift temperature obtained by alternately and repeatedly laminating TiO 2 , SiO 2 and Al 2 O 3 coatings on a substrate having a linear expansion coefficient value within the range of 75 to 150 (/ 10 7 ). A multilayer filter with a coefficient of almost zero.
【請求項7】 蒸着物質として,TiO2,SiO2,Ta2O5
Al2O3 ,ZrO2, Si,ZnS,HfO, Ge ,Nd2O6 ,Nb2O5 ,CeO2
のいづれか一つ以上を採用し,イオンあるいはプラズマ
プロセス法により,線膨張係数値が75乃至150(/107) の
範囲内にある基板上に,上記蒸着皮膜を稠密蒸着してな
る,波長シフト温度係数が略ゼロの多層膜フィルタ。
7. The deposition material is TiO 2 , SiO 2 , Ta 2 O 5 ,
Al 2 O 3 , ZrO 2, Si, ZnS, HfO, Ge, Nd 2 O 6, Nb 2 O 5 ,, CeO 2
Wavelength shift obtained by densely depositing the above vapor-deposited film on a substrate having a coefficient of linear expansion within the range of 75 to 150 (/ 10 7 ) by an ion or plasma process method by employing one or more of A multilayer filter with a temperature coefficient of almost zero.
【請求項8】 イオンあるいはプラズマプロセス法によ
り異なった基板上に同一の多層膜を積層して二種類以上
の多層膜フィルタを作製し,各多層膜フィルタの波長シ
フト温度係数値を線膨張係数−波長シフト温度係数座標
上にプロットしてその多層膜固有の温度係数シフト直線
を描き,この直線から所定の線膨張係数を有する基板を
採用する,多層膜フィルタの波長シフト温度係数の選定
方法。
8. A multilayer filter of two or more kinds is manufactured by laminating the same multilayer film on different substrates by an ion or plasma process method, and the wavelength shift temperature coefficient value of each multilayer filter is set to a linear expansion coefficient-- Wavelength shift temperature coefficient A method of selecting the wavelength shift temperature coefficient of a multilayer filter, which is plotted on the coordinates and draws a temperature coefficient shift straight line specific to the multilayer film, and a substrate having a predetermined linear expansion coefficient is adopted from this straight line.
【請求項9】 線膨張係数値が75乃至150(/107) の範囲
内にある基板を採用し,多層膜自身の屈折率の直線温度
係数を調節して所定の波長シフト温度係数をえる,請求
項1記載の多層膜フィルタの波長シフト温度係数の選定
方法。
9. A substrate having a coefficient of linear expansion within the range of 75 to 150 (/ 10 7 ) is employed, and the linear temperature coefficient of the refractive index of the multilayer film itself is adjusted to obtain a predetermined wavelength shift temperature coefficient. A method for selecting a wavelength shift temperature coefficient of a multilayer filter according to claim 1.
【請求項10】 多層膜固有の温度係数シフト直線から
導かれる線膨張係数値の基板を採用する,波長シフト温
度係数が略ゼロの多層膜フィルタ。
10. A multilayer filter having a wavelength shift temperature coefficient of substantially zero, which employs a substrate having a linear expansion coefficient value derived from a temperature coefficient shift straight line peculiar to the multilayer film.
【請求項11】 基板のみ異なる各多層膜フィルタの線
膨張係数−波長シフト温度係数座標値から温度係数シフ
ト直線を求める,請求項10記載の波長シフト温度係数
が略ゼロの多層膜フィルタ。
11. The multilayer filter according to claim 10, wherein a temperature coefficient shift straight line is obtained from the linear expansion coefficient-wavelength shift temperature coefficient coordinate values of the respective multilayer filters having different substrates.
JP35125893A 1993-12-28 1993-12-28 Method for manufacturing multilayer bandpass filter and multilayer bandpass filter having substantially zero wavelength shift temperature coefficient Expired - Fee Related JP3243474B2 (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19700385A1 (en) * 1996-01-12 1997-07-17 Nec Corp Optical filter
JP2001318222A (en) * 2001-04-26 2001-11-16 Ohara Inc Glass-ceramics for optical filter and the optical filter
US6410466B1 (en) 1999-08-10 2002-06-25 Kabushiki Kaisha Ohara Glass-ceramics for a light filter
US6461733B1 (en) 1999-08-30 2002-10-08 Kabushiki Kaisha Ohara Glass for a light filter and light filter
US6465105B1 (en) 1999-08-02 2002-10-15 Hoya Corporation WDM optical filter and glass substrate for use in the WDM optical filter
WO2002100790A1 (en) * 2001-06-12 2002-12-19 Nippon Electric Glass Co., Ltd. Multi-layer film filter-use substrate glass and multi-layer film filter
US6582826B1 (en) 1998-03-23 2003-06-24 Kabushiki Kaisha Ohara Glass-ceramics
CN112114394A (en) * 2019-06-21 2020-12-22 福州高意光学有限公司 Optical filter and sensor system with temperature compensation effect
JP2022531156A (en) * 2019-06-05 2022-07-06 信陽舜宇光学有限公司 Near-infrared passband optical filter and optical sensing system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6019101A (en) * 1983-07-13 1985-01-31 Hoya Corp Beam splitter
JPH01287502A (en) * 1988-05-13 1989-11-20 Matsushita Electric Ind Co Ltd Light beam splitter
JPH02120803A (en) * 1988-10-31 1990-05-08 Nippon Electric Glass Co Ltd Treatment of multilayered interference filter film
JPH0394203A (en) * 1989-09-07 1991-04-19 Fujitsu Ltd Long-wave pass filter
JPH03197901A (en) * 1989-12-27 1991-08-29 Fujitsu Ltd Optical band-pass filter
JPH04217206A (en) * 1990-12-18 1992-08-07 Asahi Optical Co Ltd Fresh color separating reflective film
JPH04340504A (en) * 1991-05-17 1992-11-26 Nec Corp Gaseous argon laser mirror

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6019101A (en) * 1983-07-13 1985-01-31 Hoya Corp Beam splitter
JPH01287502A (en) * 1988-05-13 1989-11-20 Matsushita Electric Ind Co Ltd Light beam splitter
JPH02120803A (en) * 1988-10-31 1990-05-08 Nippon Electric Glass Co Ltd Treatment of multilayered interference filter film
JPH0394203A (en) * 1989-09-07 1991-04-19 Fujitsu Ltd Long-wave pass filter
JPH03197901A (en) * 1989-12-27 1991-08-29 Fujitsu Ltd Optical band-pass filter
JPH04217206A (en) * 1990-12-18 1992-08-07 Asahi Optical Co Ltd Fresh color separating reflective film
JPH04340504A (en) * 1991-05-17 1992-11-26 Nec Corp Gaseous argon laser mirror

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19700385A1 (en) * 1996-01-12 1997-07-17 Nec Corp Optical filter
US6582826B1 (en) 1998-03-23 2003-06-24 Kabushiki Kaisha Ohara Glass-ceramics
US6794043B2 (en) 1998-03-23 2004-09-21 Kabushiki Kaisha Ohara Glass-ceramics for a light filter
JP2004182598A (en) * 1999-08-02 2004-07-02 Hoya Corp Glass base for wdm optical filter, wdm optical filter, optical multiplexer/demultiplexer for wdm and method for manufacturing glass for base
US6465105B1 (en) 1999-08-02 2002-10-15 Hoya Corporation WDM optical filter and glass substrate for use in the WDM optical filter
KR100394043B1 (en) * 1999-08-10 2003-08-06 가부시키가이샤 오하라 Glass-ceramics for a light filter and a light filter
US6410466B1 (en) 1999-08-10 2002-06-25 Kabushiki Kaisha Ohara Glass-ceramics for a light filter
US6461733B1 (en) 1999-08-30 2002-10-08 Kabushiki Kaisha Ohara Glass for a light filter and light filter
KR100394044B1 (en) * 1999-08-30 2003-08-06 가부시키가이샤 오하라 Glass for a light filter and a light filter
JP2001318222A (en) * 2001-04-26 2001-11-16 Ohara Inc Glass-ceramics for optical filter and the optical filter
WO2002100790A1 (en) * 2001-06-12 2002-12-19 Nippon Electric Glass Co., Ltd. Multi-layer film filter-use substrate glass and multi-layer film filter
JP2022531156A (en) * 2019-06-05 2022-07-06 信陽舜宇光学有限公司 Near-infrared passband optical filter and optical sensing system
CN112114394A (en) * 2019-06-21 2020-12-22 福州高意光学有限公司 Optical filter and sensor system with temperature compensation effect
CN112114394B (en) * 2019-06-21 2023-03-31 福州高意光学有限公司 Optical filter and sensor system with temperature compensation effect

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