JPH07198428A - Surface acoustic wave sensor - Google Patents

Surface acoustic wave sensor

Info

Publication number
JPH07198428A
JPH07198428A JP5335626A JP33562693A JPH07198428A JP H07198428 A JPH07198428 A JP H07198428A JP 5335626 A JP5335626 A JP 5335626A JP 33562693 A JP33562693 A JP 33562693A JP H07198428 A JPH07198428 A JP H07198428A
Authority
JP
Japan
Prior art keywords
substrate
acoustic wave
surface acoustic
sensor
idt electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5335626A
Other languages
Japanese (ja)
Inventor
Nobunari Araki
信成 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP5335626A priority Critical patent/JPH07198428A/en
Publication of JPH07198428A publication Critical patent/JPH07198428A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To assemble sensor members easily and to eliminate the contact between the sensor members and an IDT electrode. CONSTITUTION:A piezoelectric substrate 1 is made of a material for propagating leakage surface acoustic wave, and IDT electrode 2 for exciting the surface acoustic wave and an IDT electrode 3 for converting the leakage surface acoustic wave propagated on the substrate 1 are formed on the surface, a recessed part 1A is formed at the center of the inverse side of the substrate 1, and a sensor member 4 is applied to the recessed part 1A, thus constituting a sensor which changes the sound velocity of the leakage surface acoustic wave propagated on the substrate 1 depending on the sensing state of the sensor member 4. The sensor member 4 and the IDT electrode 2 are positioned on mutually separated surfaces for eliminating contact, thus preventing the damage and at the same time facilitating the manufacture. By providing the recessed part 1A, the sensor member 4 is positioned at a shallow location from the substrate surface, thus improving the sensor sensitivity for the leakage surface acoustic wave.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、弾性表面波を利用した
センサに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor utilizing surface acoustic waves.

【0002】[0002]

【従来の技術】この種のセンサは、図3に示すように、
圧電性基板1の両側にすだれ状のIDT(インター・デ
ィジタル・トランスデューサ)電極2、3を形成し、電
極間になる基板1面にセンサ部材4を付着させる。
2. Description of the Related Art A sensor of this type, as shown in FIG.
Interdigital transducer (IDT) electrodes 2 and 3 are formed on both sides of the piezoelectric substrate 1, and the sensor member 4 is attached to the surface of the substrate 1 between the electrodes.

【0003】この構成において、IDT電極2には高周
波信号源5から所定周波数の信号を印加し、IDT電極
2で励起された弾性表面波をIDT電極3に伝搬させ、
このIDT電極3の電気機械結合による出力周波数を計
測器6で測定する。
In this structure, a signal of a predetermined frequency is applied to the IDT electrode 2 from the high frequency signal source 5 to propagate the surface acoustic wave excited by the IDT electrode 2 to the IDT electrode 3.
The output frequency by electromechanical coupling of the IDT electrode 3 is measured by the measuring instrument 6.

【0004】センサ部材4は、基板1面に付着されるこ
とで基板1を伝搬する弾性表面波の音速を低下させる。
その度合いは、センサ部材4のセンシング状態に対応す
る。これにより、計測器6で計測される周波数は、セン
サ部材4のセンシング状態により変化し、この周波数変
化をセンサ出力として利用することができる。
The sensor member 4 attached to the surface of the substrate 1 reduces the sound velocity of the surface acoustic wave propagating through the substrate 1.
The degree corresponds to the sensing state of the sensor member 4. As a result, the frequency measured by the measuring device 6 changes depending on the sensing state of the sensor member 4, and this frequency change can be used as the sensor output.

【0005】例えば、湿度センサを構成するには、セン
サ部材4をセレン薄膜や炭素膜とし、その水分の吸収度
合いに応じて基板1の音速を変化させる。また、ガスセ
ンサは、ホルムアルデヒド脱水素酵素とその補酵素を水
晶基板の塗布膜としてホルムアルデヒドの濃度を周波数
変化として検出する。また、臭いセンサは、水晶振動子
が持つ微量質量の高検出感度を利用して臭いの元となる
化学物質を周波数変化として検出する。さらに、苦みセ
ンサや金属の腐食センサなどにもそれぞれのセンサ部材
を使った応用がなされる。
For example, to construct a humidity sensor, the sensor member 4 is made of a selenium thin film or a carbon film, and the sound velocity of the substrate 1 is changed according to the degree of water absorption. Further, the gas sensor detects formaldehyde concentration as a frequency change by using formaldehyde dehydrogenase and its coenzyme as coating films on a quartz substrate. In addition, the odor sensor detects a chemical substance that is a source of odor as a frequency change by utilizing the high detection sensitivity of a minute amount of a crystal oscillator. Furthermore, the application using each sensor member is made also to a bitterness sensor, a metal corrosion sensor, etc.

【0006】[0006]

【発明が解決しようとする課題】従来構成において、I
DT電極を設けた基板表面でセンシングを行う方法で
は、基板1自体が極めて小さくなることから、センサ作
製に際してIDT電極2、3とセンサ部材4が接触する
恐れがある。
In the conventional configuration, I
In the method of performing sensing on the surface of the substrate provided with the DT electrode, since the substrate 1 itself becomes extremely small, the IDT electrodes 2 and 3 and the sensor member 4 may come into contact with each other when manufacturing the sensor.

【0007】このため、IDT電極やセンサ部材に損傷
を与えることがある。また、電極間の短絡が起きないよ
うIDT電極の保護のための保護膜形成等の対策を取ら
なければならない。
Therefore, the IDT electrode and the sensor member may be damaged. Further, it is necessary to take measures such as forming a protective film for protecting the IDT electrodes so that a short circuit between the electrodes does not occur.

【0008】本発明の目的は、センサ部材の組み込みを
容易にし、またセンサ部材とIDT電極との接触を無く
した構造の弾性表面波センサを提供することにある。
An object of the present invention is to provide a surface acoustic wave sensor having a structure which facilitates the assembly of the sensor member and eliminates the contact between the sensor member and the IDT electrode.

【0009】[0009]

【課題を解決するための手段】本発明は、前記課題の解
決を図るため、一方の表面が平板状にされ他方の裏面が
平板状でその中央部に窪み部を形成し、表面に漏洩弾性
表面波を伝搬する圧電性基板と、前記基板の表面の両側
部の一方の部位で電気機械結合を得、信号源によって励
起された弾性表面波を発生する第1のIDT電極と、前
記基板の表面の両側部の他方の部位で電気機械結合を
得、該基板を伝搬してくる漏洩弾性表面波の周波数変化
をセンサ出力として得る第2のIDT電極と、前記基板
の窪み部に設けられ、前記基板を伝搬する漏洩弾性表面
波の音速をセンシング状態に応じて変化させるセンサ部
材とを備えたことを特徴とする。
According to the present invention, in order to solve the above-mentioned problems, one surface is made flat and the other back is made flat, and a recess is formed in the central portion thereof, and the surface has leakage elasticity. A piezoelectric substrate for propagating a surface wave, a first IDT electrode for generating a surface acoustic wave excited by a signal source by obtaining electromechanical coupling at one site on both sides of the surface of the substrate, and a substrate for the substrate. A second IDT electrode that obtains electromechanical coupling at the other part of both sides of the surface and obtains a frequency change of the leaky surface acoustic wave propagating through the substrate as a sensor output, and is provided in the recessed portion of the substrate, And a sensor member for changing the sound velocity of the leaky surface acoustic wave propagating through the substrate according to the sensing state.

【0010】[0010]

【作用】圧電性基板を伝搬する弾性表面波として、波の
エネルギーが基板表面に集中しているが、波が伝搬する
際にバルク波を基板内に放射しながら伝搬する漏洩弾性
表面波(リーキー波、疑似弾性表面波)を利用する。
Function: As the surface acoustic wave propagating through the piezoelectric substrate, the energy of the wave is concentrated on the substrate surface, but when the wave propagates, the leaky surface acoustic wave (leaky surface wave propagating while radiating the bulk wave into the substrate) Wave, pseudo surface acoustic wave) is used.

【0011】これにより、センサ部材をIDT電極が設
けられる表面に位置させるという制約を無くし、基板の
裏面に設けて漏洩弾性表面波の周波数変化作用素とする
と共に、IDT電極とは反対の基板面に設けてIDT電
極との接触を無くす。
Thus, the restriction that the sensor member is located on the surface on which the IDT electrode is provided is eliminated, and the sensor member is provided on the back surface of the substrate to serve as the frequency changing operator of the leaky surface acoustic wave, and on the surface of the substrate opposite to the IDT electrode. It is provided to eliminate contact with the IDT electrode.

【0012】漏洩弾性表面波に対するセンサ部材の作用
は、基板が薄いほど効果的であるが、基板を薄く形成す
ると保持構造や基板強度が問題となる。そこで、基板は
比較的厚くし、基板中央部には窪みを形成して該部位に
センサ部材を設ける。
The effect of the sensor member on the leaky surface acoustic wave is more effective when the substrate is thinner, but when the substrate is made thin, the holding structure and the substrate strength become problems. Therefore, the substrate is made relatively thick, and a depression is formed in the central portion of the substrate to provide the sensor member at that portion.

【0013】[0013]

【実施例】図1は、本発明の一実施例を示す素子断面図
である。
FIG. 1 is a sectional view of an element showing an embodiment of the present invention.

【0014】圧電性基板1は、一方の表面が平板状にさ
れ、その両側部にIDT電極2、3が形成される。ま
た、圧電性基板1は、他方の裏面が中央部に窪み部1A
を有して平板状に形成される。窪み部1Aにはセンサ部
材4が貼り付けられる。
One surface of the piezoelectric substrate 1 is flat, and the IDT electrodes 2 and 3 are formed on both sides thereof. Further, the piezoelectric substrate 1 has a recessed portion 1A at the center on the other back surface.
And has a flat shape. The sensor member 4 is attached to the recess 1A.

【0015】この圧電性基板1は、漏洩弾性表面波を伝
搬する材料にされる。例えば、水晶基板やLiTaO3
基板、Li247基板があり、特に零温度係数のカッ
トになるLSTカット水晶基板が好ましい。
The piezoelectric substrate 1 is made of a material that propagates a leaky surface acoustic wave. For example, a quartz substrate or LiTaO 3
There is a substrate, a Li 2 B 4 O 7 substrate, and an LST-cut quartz substrate that cuts a zero temperature coefficient is particularly preferable.

【0016】本実施例において、IDT電極2は高周波
信号源が接続され、電気機械結合によって圧電性基板1
に漏洩弾性表面波を発生する。IDT電極3は、圧電性
基板1の表面を伝搬してくる漏洩弾性表面波を電気機械
結合によって電気信号に変換し、計測器への出力を得
る。
In this embodiment, a high frequency signal source is connected to the IDT electrode 2 and the piezoelectric substrate 1 is electromechanically coupled.
Generates leaky surface acoustic waves. The IDT electrode 3 converts the leaky surface acoustic wave propagating on the surface of the piezoelectric substrate 1 into an electric signal by electromechanical coupling, and obtains an output to a measuring instrument.

【0017】ここで、圧電性基板1を伝搬する漏洩弾性
表面波が基板1内面に放射するバルク波がセンサ部材4
のセンシング状態によって影響を受け、結果的に漏洩弾
性表面波の伝搬速度が変化する。この速度変化によって
IDT電極3で変換する信号の周波数変化として捉える
センサを構成できる。
Here, the leaky surface acoustic wave propagating through the piezoelectric substrate 1 radiates to the inner surface of the substrate 1 and the bulk wave radiates into the sensor member 4.
Is affected by the sensing state of, and as a result, the propagation velocity of the leaky surface acoustic wave changes. A sensor that can be regarded as a frequency change of a signal converted by the IDT electrode 3 by this speed change can be configured.

【0018】本実施例によれば、センサ部材4とIDT
電極2、3とは圧電性基板1の表面と裏面に分離され
る。これにより、従来の構造で問題となるセンサ部材と
IDT電極との接触による損傷を無くし、また保護膜の
形成を不要にする。
According to this embodiment, the sensor member 4 and the IDT
The electrodes 2 and 3 are separated into a front surface and a back surface of the piezoelectric substrate 1. As a result, the damage due to the contact between the sensor member and the IDT electrode, which is a problem in the conventional structure, is eliminated, and the formation of the protective film is unnecessary.

【0019】また、本実施例では、圧電性基板1の窪み
部1Aにセンサ部材1を貼り付けるようにしたため、圧
電性基板1の表面から比較的浅い位置にセンサ部材1を
配置でき、センサ部材1が与える漏洩弾性表面波の伝搬
速度変化への効果を高め、センサ感度を下げることは少
ない。
Further, in this embodiment, since the sensor member 1 is attached to the recess 1A of the piezoelectric substrate 1, the sensor member 1 can be arranged at a relatively shallow position from the surface of the piezoelectric substrate 1, and the sensor member 1 The effect of 1 on the propagation velocity change of the leaky surface acoustic wave is enhanced, and the sensor sensitivity is not lowered.

【0020】図2は、本発明の他の実施例を示す。同図
が図1と異なる部分は、圧電性基板1の窪み部1Aの形
成に、センサ部材4を貼り付ける面部分のみとしたこと
にある。
FIG. 2 shows another embodiment of the present invention. 1 is different from FIG. 1 in that only the surface portion to which the sensor member 4 is attached is formed in the formation of the recessed portion 1A of the piezoelectric substrate 1.

【0021】すなわち、圧電性基板1の窪み部1Aは、
センサ部材4を取り囲む構造になり、センサ部材4の幅
方向にも壁部1Bを持つ構造になる。この構造は、圧電
性基板1の窪み部1Aをエッチングで形成することによ
って実現される。
That is, the recessed portion 1A of the piezoelectric substrate 1 is
The structure is such that it surrounds the sensor member 4, and also has a wall portion 1B in the width direction of the sensor member 4. This structure is realized by forming the recessed portion 1A of the piezoelectric substrate 1 by etching.

【0022】本実施例では前記の実施例と同様の作用効
果を得ることができるのに加えて、壁部1Bを持つこと
から窪み部1A面をIDT電極側表面に対して浅く形成
するも基板1に十分な曲げ強度を持たせることができ
る。これにより、センサ部材4を基板表面に一層近く配
置でき、センサ感度を高める効果がある。
In this embodiment, in addition to obtaining the same effects as the above-mentioned embodiment, since the wall 1B is provided, the surface of the recess 1A is formed shallower than the surface of the IDT electrode side. 1 can have a sufficient bending strength. Thereby, the sensor member 4 can be arranged closer to the surface of the substrate, which has the effect of increasing the sensor sensitivity.

【0023】[0023]

【発明の効果】以上のとおり、本発明によれば、漏洩弾
性表面波を利用することによりIDT電極を形成する面
とセンサ部材を配置する面とを圧電性基板の表面と裏面
に分離する構造としたため、IDT電極とセンサ部材の
接触が無くなり、IDT電極とセンサ部材の作製を容易
にし、しかも互いの接触による損傷を確実に防止する効
果がある。
As described above, according to the present invention, the structure in which the surface on which the IDT electrode is formed and the surface on which the sensor member is arranged are separated into the front surface and the back surface of the piezoelectric substrate by utilizing the leaky surface acoustic waves. Therefore, there is no contact between the IDT electrode and the sensor member, and there is an effect that the IDT electrode and the sensor member are easily manufactured, and moreover, damage due to mutual contact is surely prevented.

【0024】また、センサ部材の貼り付けには圧電性基
板に窪み部を設ける構造としたため、基板の厚みを比較
的厚くしてその強度に十分なものを得ると共に、センサ
部材を漏洩弾性表面波の伝搬面から比較的浅く位置させ
てセンサ感度を高めることができる。
Since the sensor member is adhered to the piezoelectric substrate by providing the recessed portion, the thickness of the substrate is made relatively thick to obtain sufficient strength, and the sensor member is leaked by a surface acoustic wave. The sensor sensitivity can be increased by positioning the sensor relatively shallowly from the propagation surface of.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す素子断面図。FIG. 1 is a sectional view of an element showing an embodiment of the present invention.

【図2】他の実施例を示す素子断面図。FIG. 2 is a sectional view of an element showing another embodiment.

【図3】従来の素子斜視図。FIG. 3 is a perspective view of a conventional element.

【符号の説明】[Explanation of symbols]

1…圧電性基板 2、3…IDT電極 4…センサ部材 5…信号源 6…計測器 1A…窪み部 1B…壁部 DESCRIPTION OF SYMBOLS 1 ... Piezoelectric substrate 2, 3 ... IDT electrode 4 ... Sensor member 5 ... Signal source 6 ... Measuring instrument 1A ... Recess 1B ... Wall

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 一方の表面が平板状にされ他方の裏面が
平板状でその中央部に窪み部を形成し、表面に漏洩弾性
表面波を伝搬する圧電性基板と、 前記基板の表面の両側部の一方の部位で電気機械結合を
得、信号源によって励起された弾性表面波を発生する第
1のIDT電極と、 前記基板の表面の両側部の他方の部位で電気機械結合を
得、該基板を伝搬してくる漏洩弾性表面波の周波数変化
をセンサ出力として得る第2のIDT電極と、 前記基板の窪み部に設けられ、前記基板を伝搬する漏洩
弾性表面波の音速をセンシング状態に応じて変化させる
センサ部材とを備えたことを特徴とする弾性表面波セン
サ。
1. A piezoelectric substrate, one surface of which is flat and the other back surface is flat, and a recess is formed in the center thereof, and a piezoelectric substrate for propagating leaky surface acoustic waves on the surface, and both sides of the surface of the substrate. Electromechanical coupling is obtained at one part of the part, and a first IDT electrode that generates a surface acoustic wave excited by a signal source, and electromechanical coupling is obtained at the other part of both sides of the surface of the substrate, A second IDT electrode that obtains a frequency change of the leaky surface acoustic wave propagating through the substrate as a sensor output, and a sound velocity of the leaky surface acoustic wave propagating through the substrate depending on the sensing state. A surface acoustic wave sensor, comprising:
JP5335626A 1993-12-28 1993-12-28 Surface acoustic wave sensor Pending JPH07198428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5335626A JPH07198428A (en) 1993-12-28 1993-12-28 Surface acoustic wave sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5335626A JPH07198428A (en) 1993-12-28 1993-12-28 Surface acoustic wave sensor

Publications (1)

Publication Number Publication Date
JPH07198428A true JPH07198428A (en) 1995-08-01

Family

ID=18290700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5335626A Pending JPH07198428A (en) 1993-12-28 1993-12-28 Surface acoustic wave sensor

Country Status (1)

Country Link
JP (1) JPH07198428A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19856951A1 (en) * 1998-12-10 1999-10-21 Bosch Gmbh Robert Sensor system for determining mechanical variables at structural element eg. pressure with evaluation of propagation condition of acoustic surface waves SAW using measuring element of piezoelectric
WO2005099089A1 (en) * 2004-04-01 2005-10-20 Toyo Communication Equipment Co., Ltd. Surface acoustic device
JPWO2005003752A1 (en) * 2003-07-04 2006-08-17 株式会社村田製作所 Surface acoustic wave sensor
JP2017072620A (en) * 2012-10-29 2017-04-13 京セラ株式会社 Surface acoustic wave sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19856951A1 (en) * 1998-12-10 1999-10-21 Bosch Gmbh Robert Sensor system for determining mechanical variables at structural element eg. pressure with evaluation of propagation condition of acoustic surface waves SAW using measuring element of piezoelectric
JPWO2005003752A1 (en) * 2003-07-04 2006-08-17 株式会社村田製作所 Surface acoustic wave sensor
US7816837B2 (en) 2003-07-04 2010-10-19 Murata Manufacturing Co., Ltd. Surface acoustic wave sensor
WO2005099089A1 (en) * 2004-04-01 2005-10-20 Toyo Communication Equipment Co., Ltd. Surface acoustic device
US7589451B2 (en) 2004-04-01 2009-09-15 Epson Toyocom Corporation Surface acoustic wave device
JP2017072620A (en) * 2012-10-29 2017-04-13 京セラ株式会社 Surface acoustic wave sensor

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