JPH071799Y2 - Package for storing semiconductor devices - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a package, and more particularly to a semiconductor element housing package for housing a semiconductor element.

[Conventional technology]

With the increase in speed and capacity of information processing, efforts have been made to improve semiconductor devices applied to information processing so as to be able to handle higher power at higher frequencies. For example, as an active semiconductor element, a Schottky barrier type field effect transistor made of a compound semiconductor such as gallium and arsenide has been developed in place of the conventional semiconductor element made of silicon, so that it can handle a large amount of power at high frequencies. Is being improved.

Therefore, as a package for housing such a semiconductor element handling high frequency and large power, a metal base body, a metal frame body mounted on the metal base body, and a terminal mounting member fitted and brazed to the metal frame body. Those with and are already known.

As shown in FIG. 5, the terminal mounting member has a flat plate portion 1 made of ceramic and a standing wall portion 2 fixed on the flat plate portion 1. At the center of the upper surface of the flat plate portion 1, the standing wall portion 2
A terminal attachment metal layer 3 is formed which extends in a direction orthogonal to the direction. Further, a brazing metal layer 4 is formed on the entire outer peripheral surface of the standing wall portion 2 and both side surfaces of the flat plate portion 1.

[Problems to be solved by the device]

In the terminal mounting member, the terminal mounting metal layer 3,
The brazing metal layer 4 formed on the side surface of the flat plate portion 1 is close to each other, and the gap G between them is narrow. If the gap G is narrowed, the stray capacitance generated between the metal layers 3 and 4 is increased and the high frequency characteristics are deteriorated. Therefore, in order to improve the high frequency characteristics, it is necessary to widen the gap G.

Therefore, in the above-described conventional configuration, improvements are made such that the terminal mounting member is enlarged and the width of the terminal mounting metal layer 3 is narrowed. However, with this configuration, there are problems that it is not possible to deal with a multi-terminal semiconductor element and the strength of attaching leads to the metal layer 3 is reduced.

The object of the present invention is to reduce the stray capacitance generated between the terminal mounting metal layer and the brazing metal layer without increasing the size of the terminal mounting member or narrowing the terminal mounting metal layer. It is to provide a package for housing a semiconductor element.

[Means for Solving the Problems]

A semiconductor element housing package according to the present invention includes a metal base, a metal frame, and a terminal mounting member. The metal frame body is mounted on the metal base body and has a cutout portion. The terminal mounting member is a member made of ceramic which is fitted into the notch portion of the metal frame body and brazed.

The terminal mounting member has a flat plate portion and a standing wall portion fixed on the flat plate portion. At the center of the upper surface of the flat plate portion, a terminal attachment metal layer extending in a direction intersecting with the standing wall portion is provided. In addition, a brazing metal layer is provided on the outer edge surface of the standing wall portion and on the side surface of the flat plate portion that extends the outer edge surface.

[Action]

In the package for housing a semiconductor device according to the present invention, the semiconductor device is housed in the space surrounded by the metal base and the metal frame, and bonded to the terminal mounting metal layer of the terminal mounting member for use.

In this package for housing a semiconductor element, the brazing metal layer of the terminal mounting member is provided only on the outer edge surface of the standing wall portion and the portion of the side surface of the flat plate portion that extends the outer edge surface. Therefore, the influence of the brazing metal layer on the terminal mounting metal layer is small, and the stray capacitance generated between the both is small. As a result, the high frequency characteristics can be improved without increasing the size of the terminal mounting member and narrowing the terminal mounting metal layer.

〔Example〕

FIG. 2 shows a semiconductor element housing package for housing a field effect transistor as an embodiment of the present invention. As is clear from FIG. 2, this semiconductor element housing package has a rectangular flat metal base 1, a metal frame 3 mounted on the metal base 1, and a metal frame 3.
And a lid 2 that can be fixed to the upper surface of the. The terminal mounting members 4 are fitted and brazed into the pair of notches 3a formed in the metal frame 3, respectively. An input / output terminal 5 is brazed to each of the terminal mounting members 4.

A field effect transistor (not shown) is housed in the space formed by the upper surface of the metal substrate 1 and the metal frame 3. At this time, the metal substrate 1 is used as a ground terminal and a heat sink of the field effect transistor. Further, through holes a are provided at both ends of the metal base 1. The through hole a is used as a hole through which a screw is inserted when fixing the semiconductor element housing package housing the field effect transistor to the external electric circuit board.

The metal substrate 1 and the metal frame 3 are made of, for example, a metal mainly containing aluminum (aluminum alone or a metal containing a slight amount of impurities in aluminum). For example, the metal used, which is mainly composed of aluminum, has a specific gravity of about 2.7, and the specific gravity of oxygen-free copper or Kovar (8.36 or more).
Compared with, it is about 1/3. As a result, the metal base 1 and the metal frame 3 are about 1/3 lighter than the conventional products. Further, since the metal mainly composed of aluminum is a non-magnetic substance, even if a current flows through the metal base 1 or the metal frame 3 when the field effect transistor is operated, an unnecessary magnetic field is not generated. Absent. Therefore, in this case, the characteristics of the field effect transistor are not deteriorated by the unnecessary magnetic field. Further, since the metal mainly composed of aluminum has excellent oxidation resistance, the metal base 1
It is not necessary to coat the outer surface of the metal frame 3 with a metal having excellent oxidation resistance for preventing oxidation. Therefore, in this case, the manufacturing process of the semiconductor element housing package can be simplified and the cost can be reduced.

The lid 2 is also made of the same metal as the metal base 1 and the metal frame 3. The lid body 2 is such that a field effect transistor or the like is housed in the frame body 3 and then fixed to the upper surface of the frame body 3 in a hermetically sealed state.

The input / output terminal mounting member 4 is fitted into a pair of notches 3a formed in the two side walls of the metal frame 3 which face each other. The mounting member 4 is a member made of, for example, ceramic containing alumina or the like. As shown in FIG. 1, the terminal mounting member 4 is a rectangular parallelepiped flat plate portion 10.
And a standing wall portion 11 fixed on the flat plate portion 10.
At the center of the upper surface of the flat plate portion 10, a terminal attachment metal layer 12 extending in a direction orthogonal to the standing wall portion 11 is formed. A brazing metal layer 13 is provided on the outer edge surface of the standing wall portion 11 and on the side surface of the flat plate portion 10 where the outer edge surface is extended. The metal layers 12 and 13 are made of a refractory metal such as tungsten, molybdenum, or manganese.

Metal layer 12 for terminal mounting not covered by the upright wall portion 11
The input / output terminal 5 (FIG. 2) is fixed to one of the two parts. Input / output terminals such as field effect transistors are bonded to the other side. . On the other hand, the brazing metal layer 13 faces the notch 3a when the terminal mounting member 4 is fitted into the notch 3a of the frame body 3 shown in FIG. Then, the terminal mounting member 4 is fixed to the frame body 3 by brazing between the brazing metal layer 13 and the surface of the notch 3a.

In this embodiment, since the metal layer 13 for brazing is formed only on the side surface of the flat plate portion 10 extending from the outer edge surface of the standing wall portion, the metal layer 12 for terminal mounting and the brazing metal layer 12 for brazing are formed. The stray capacitance generated with the metal layer 13 is small. Further, in this terminal mounting member 4, one end of the metal layer 12 for terminal mounting is connected to an external circuit and the other end is connected to an internal circuit with the standing wall portion 11 as a boundary, and the coaxial characteristics are provided. It is close to the railroad track.

Next, a method for manufacturing the above-mentioned package for housing a semiconductor element will be described.

First, when forming the terminal mounting member 4, as shown in FIG. 3A, an unfired ceramic substrate (green sheet) is used.
A flat plate portion 10 consisting of is prepared. A metal layer 12 for terminal attachment is formed on the unsintered flat plate portion 10. Next, as shown in FIG. 3B, the standing wall portion 11 is placed on the flat plate portion 10 to form the brazing metal layer 13. Then, the whole is sintered to be sintered and integrated to obtain the terminal mounting member shown in FIG.

Next, as shown in FIG. 3C, the terminal mounting member 4 is fitted into the notch 3a of the frame body 3, and the brazing metal layer 13 and the notch 3a are inserted.
Braze between the surface and. Next, the metal frame 3 is brazed onto the metal base 1 using an aluminum brazing material.
Further, the input / output terminal 5 is brazed to the terminal mounting metal layer 12 by using a silver brazing material.

Then, a field effect transistor or the like is housed and fixed in the space inside the metal frame 3, and each electrode of the field effect transistor or the like and the terminal mounting metal layer 12 are connected by wire bonding. Further, the frame body 2 is fixed to the upper surface of the metal frame body 3 in an airtight state using glass, resin or the like. by this,
A semiconductor device in which a semiconductor element is housed in a package can be obtained. In the obtained semiconductor device, the gap between the terminal mounting metal layer 12 of the terminal mounting member 4 and the brazing metal layer 13 is widened, so that the stray capacitance generated therebetween is reduced. Therefore, the terminal mounting member 4 can be downsized, and the width of the terminal mounting metal layer 12 can be widened. Therefore, the attachment strength of the input / output terminal 5 and the semiconductor element to the terminal attachment metal layer 12 is improved.

[Other Examples]

(A) The present invention can be similarly applied to a package for housing a semiconductor device using the terminal mounting member 4 shown in FIG. In FIG. 4, the terminal mounting member 4 formed so that the width of the portion exposed to the outside is larger than the width of the portion of the terminal mounting metal layer 12 existing under the standing wall portion 11. I'm using it. The width t of the portion of the metal layer 12 for terminal attachment shown in FIG. 4 which is covered with the standing wall portion 11 is the same as the thickness T of the flat plate portion 10. As a result, the impedance of the terminal mounting metal layer 12 is set to 50Ω.

(B) As the terminal mounting member, a member formed in a circular shape or another polygonal shape can be adopted when viewed from the mounting direction of the input / output terminal 5.

(C) Although the notch 3a is a notch opened to the side of the base body 1, it may be a shape in which the side of the base body 1 is closed. It is also possible to employ a notch 3a having a shape in which the lid 2 side is open.

(D) It is also possible to adopt a configuration in which more notches 3a are provided according to the number of input / output terminals of the semiconductor element to be housed, and the terminal mounting member 4 is fitted and fixed in the notches 3a.

[Effect of device]

According to the semiconductor element housing package of the present invention, since the brazing metal layer of the terminal mounting member has the above-described shape, stray capacitance generated between the brazing metal layer and the terminal mounting metal layer is eliminated. Get smaller. Therefore, according to the present invention, the terminal mounting member can be downsized.
In addition, since the width of the metal layer for attaching terminals can be increased, wire bonding and brazing of lead wires can be facilitated, and mechanical strength can be improved.

[Brief description of drawings]

FIG. 1 is a perspective view of a terminal mounting member used in one embodiment of the present invention, FIG. 2 is a partially exploded perspective view of one embodiment of the present invention, and FIGS. 3A, 3B and 3C are FIG. 4 is a perspective view illustrating a manufacturing process of an embodiment of the present invention, FIG. 4 is a view corresponding to FIG. 1 of another embodiment of the present invention, and FIG. 5 is a view corresponding to FIG. 1 of a conventional example. is there. 1 ... Metal substrate, 3 ... Metal frame, 4 ... Terminal mounting member, 5 ... Input / output terminal, 10 ... Flat plate part, 11 ... Standing wall part,
12 …… Metal layer for mounting terminals, 13 …… Metal layer for brazing.

Claims (1)

[Scope of utility model registration request] 1. A semiconductor element housing package for housing a semiconductor element, comprising: a metal base; a metal frame body mounted on the metal base and having a cutout portion; and fitted into the cutout portion. And a terminal mounting member having a flat plate portion made of ceramic and a standing wall portion fixed to the flat plate portion, wherein the terminal mounting member is provided at the center of the upper surface of the flat plate portion and the standing wall portion. A terminal mounting metal layer extending in the intersecting direction, and a brazing metal layer provided on an outer edge surface of the standing wall portion and a portion of the side surface of the flat plate portion that extends the outer edge surface, Package for semiconductor device storage.