JPH07169668A - Substrate treatment device - Google Patents

Substrate treatment device

Info

Publication number
JPH07169668A
JPH07169668A JP31212393A JP31212393A JPH07169668A JP H07169668 A JPH07169668 A JP H07169668A JP 31212393 A JP31212393 A JP 31212393A JP 31212393 A JP31212393 A JP 31212393A JP H07169668 A JPH07169668 A JP H07169668A
Authority
JP
Japan
Prior art keywords
substrate
nozzle
treatment
pure water
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31212393A
Other languages
Japanese (ja)
Inventor
Izuru Izeki
出 井関
Takeshi Fukuchi
毅 福地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP31212393A priority Critical patent/JPH07169668A/en
Publication of JPH07169668A publication Critical patent/JPH07169668A/en
Pending legal-status Critical Current

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  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

PURPOSE:To make ununiform treatment hard to generate even by treatment by less treatment liquid by applying treatment liquid to an upper surface of a substrate after cutting water of a substrate which got wet by a water supply means. CONSTITUTION:A substrate P is attracted by vacuum by a substrate holding part 4 and a tip of a pure water nozzle 22 is arranged at a center of the substrate P. Then, the substrate holding part 4 is rotated at a slow speed by motor mechanism 26, and pure water is dripped to the substrate P and diffused all over the substrate P. Then, the substrate holding part 4 is rotated at a fast speed for a specified time and dewatering treatment is carried out for removing pure water adhering to the substrate P. The substrate P is wetted with water before applying developer for making an upper surface of the substrate P hydrophilic. Then, developer is discharged from a nozzle slit 20 of a nozzle part 7 to the substrate P and developer is applied to the substrate P. Treatment liquid is thereby spreaded readily all over a substrate even if treatment liquid is little and ununiform treatment is made hard to generate in a substrate surface.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基板処理装置、特に、
基板に所定の処理液を供給して基板の表面処理を行う基
板処理装置に関する。
BACKGROUND OF THE INVENTION The present invention relates to a substrate processing apparatus, and more particularly to
The present invention relates to a substrate processing apparatus that supplies a predetermined processing liquid to a substrate to perform a surface treatment on the substrate.

【0002】[0002]

【従来の技術】たとえば、特開平5−158055号公
報に開示された基板現像装置(基板処理装置の一例)
は、基板を水平に保持するスピンチャックと、スピンチ
ャック上に載置された基板に現像液を供給する現像液供
給ノズルとを備えている。現像液供給ノズルは、吐出部
が基板表面に近接した状態で、基板表面に沿って相対的
に平行移動しながら基板表面に現像液を吐出する。現像
が終了すると、スピンチャックが高速回転し、基板表面
の現像液を振り切る。
2. Description of the Related Art For example, a substrate developing apparatus (an example of a substrate processing apparatus) disclosed in Japanese Patent Laid-Open No. 5-158055.
Includes a spin chuck that holds the substrate horizontally, and a developing solution supply nozzle that supplies a developing solution to the substrate placed on the spin chuck. The developing solution supply nozzle discharges the developing solution onto the surface of the substrate while relatively moving in parallel along the surface of the substrate with the discharging portion being close to the surface of the substrate. When the development is completed, the spin chuck rotates at high speed to shake off the developing solution on the substrate surface.

【0003】[0003]

【発明が解決しようとする課題】環境問題等の観点から
現像液の消費量を減らすことが望まれている。しかし、
特開平5−158055号公報に開示された基板現像装
置において、現像液の消費量を減らすため基板1枚あた
りに供給する現像液の量を減らすと、基板表面に存在す
る現像液の量が少なくなり、基板表面の外周部で現像液
が不足する部分が発生する。そして、著しい場合には、
現像液が不足した部分が現像不良になる。
From the viewpoint of environmental problems, it is desired to reduce the consumption of the developing solution. But,
In the substrate developing apparatus disclosed in Japanese Patent Laid-Open No. 158055/1993, if the amount of the developing solution supplied per substrate is reduced in order to reduce the consumption of the developing solution, the amount of the developing solution present on the surface of the substrate becomes small. As a result, a portion where the developing solution is insufficient is generated in the outer peripheral portion of the substrate surface. And in striking cases,
The area where the developer is insufficient causes poor development.

【0004】本発明の目的は、少ない処理液による処理
でも処理むらを生じにくくすることにある。
An object of the present invention is to prevent uneven processing even with a small amount of processing liquid.

【0005】[0005]

【課題を解決するための手段】本発明に係る基板処理装
置は、基板に所定の処理液を供給して基板の表面処理を
行う装置であり、基板保持部と水供給手段と水切り手段
と処理液供給手段とを備えている。基板保持部は基板を
水平に保持する。水供給手段は基板保持部に保持された
基板上面に水を供給する。水切り手段は、水供給手段に
よって濡れた基板を水切りする。処理液供給手段は、水
切り手段による水切り後、基板上面に処理液を液盛りす
る。
A substrate processing apparatus according to the present invention is an apparatus for performing a surface treatment of a substrate by supplying a predetermined processing liquid to the substrate, and a substrate holding section, a water supply means, a draining means and a treatment. And a liquid supply means. The substrate holder holds the substrate horizontally. The water supply means supplies water to the upper surface of the substrate held by the substrate holder. The draining means drains the substrate wet by the water supply means. The processing liquid supply means fills the processing liquid on the upper surface of the substrate after the water is drained by the water draining means.

【0006】[0006]

【作用】本発明では、基板が水平に保持されると、保持
された基板上面に水が供給される。続いて、濡れた基板
が水切りされる。そして水切りが終わると、基板上面に
処理液が液盛りされる。ここでは、処理液の液盛り前に
基板上面が水で濡らされて親水性になっているので、処
理液が基板上面で広がりやすい。これにより、処理液の
量が少なくても、処理液は基板表面全体に容易に行きわ
たり、基板表面に処理むらが生じにくくなる。
In the present invention, when the substrate is held horizontally, water is supplied to the upper surface of the held substrate. Subsequently, the wet substrate is drained. Then, when the draining is completed, the processing liquid is poured on the upper surface of the substrate. Here, since the upper surface of the substrate is wetted with water to be hydrophilic before the processing liquid is piled up, the processing liquid easily spreads on the upper surface of the substrate. As a result, even if the amount of the processing liquid is small, the processing liquid easily spreads over the entire surface of the substrate and uneven processing on the surface of the substrate hardly occurs.

【0007】[0007]

【実施例】図1において、本発明の一実施例としての基
板現像装置は、現像処理部1と、現像液圧送部2と、水
供給部20とを主に備えている。この基板現像装置で用
いられる矩形のガラス基板Pは、図1の紙面奥行き方向
に延びる短辺A(図9)がたとえば320mmであり、
図1の紙面左右方向に延びる長辺B(図9)がたとえば
400mmである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIG. 1, a substrate developing apparatus as an embodiment of the present invention mainly comprises a developing processing section 1, a developing solution pressure feeding section 2 and a water supply section 20. The rectangular glass substrate P used in this substrate developing apparatus has a short side A (FIG. 9) extending in the depth direction of the paper of FIG. 1 of 320 mm, for example.
The long side B (FIG. 9) extending in the left-right direction of the paper surface of FIG. 1 is 400 mm, for example.

【0008】現像処理部1は、基板Pを真空吸着口によ
り吸着し水平に保持し得る基板保持部4と、基板保持部
4に保持された基板Pに対して現像液を供給する現像液
供給部5とを備えている。基板保持部4は、モータ機構
26によって垂直軸回りに回転させられるようになって
いる。基板保持部4の周囲には、回転時に現像液やリン
ス液(純水)の飛散を防止するためのカップ6が配置さ
れている。
The development processing section 1 supplies a developing solution to the substrate holding section 4 capable of adsorbing the substrate P by a vacuum suction port and holding it horizontally and the substrate P held by the substrate holding section 4. And part 5. The substrate holding part 4 is adapted to be rotated around a vertical axis by a motor mechanism 26. A cup 6 is disposed around the substrate holder 4 to prevent the developer or rinse liquid (pure water) from scattering during rotation.

【0009】現像液供給部5は、図2に示すように、基
板Pの上面に沿って基板Pの短辺方向(図1の奥行き方
向)に延びるノズル部7を有している。ノズル部7は、
ノズル支持アーム8の下端に固定されている。ノズル支
持アーム8の上端部は、移動フレーム9に上下移動可能
に支持されている。移動フレーム9は、移動ガイド10
に移動可能に支持されている。移動ガイド10は、基板
Pの長手方向(図1の左右方向)に沿って延びている。
この結果、ノズル部7は、基板Pの長手方向に基板Pの
上面に沿って移動して、基板Pの全面に現像液を塗布し
得る。
As shown in FIG. 2, the developing solution supply section 5 has a nozzle section 7 extending along the upper surface of the substrate P in the short side direction of the substrate P (depth direction in FIG. 1). The nozzle part 7 is
It is fixed to the lower end of the nozzle support arm 8. The upper end of the nozzle support arm 8 is supported by the moving frame 9 so as to be vertically movable. The moving frame 9 is a moving guide 10
It is movably supported by. The movement guide 10 extends along the longitudinal direction of the substrate P (left-right direction in FIG. 1).
As a result, the nozzle portion 7 can move in the longitudinal direction of the substrate P along the upper surface of the substrate P and apply the developing solution to the entire surface of the substrate P.

【0010】ノズル部7は、図3に示すように断面が倒
立家型の部材である。ノズル部7の底面は、基板Pの長
手方向両端から中央に向かって低くなるように傾斜して
いる。ノズル部7の底面と基板Pとのなす角度θは、た
とえば5°程度である。なお、この角度は、液盛り時に
現像液を表面張力によって引っ張って液垂れしない角度
であればよく、1〜30°の範囲、好ましくは3〜10
°の範囲であればよい。
As shown in FIG. 3, the nozzle portion 7 is a member having an inverted cross section. The bottom surface of the nozzle portion 7 is inclined so as to decrease from both ends in the longitudinal direction of the substrate P toward the center. An angle θ formed by the bottom surface of the nozzle portion 7 and the substrate P is, for example, about 5 °. It should be noted that this angle may be an angle at which the developer is pulled by the surface tension and does not drip when the liquid is piled up, and it is in the range of 1 to 30 °, preferably 3 to 10 °.
It may be in the range of °.

【0011】ノズル部7内には、下方に開口するスリッ
トノズル30が形成されている。スリットノズル30の
途中には、上下に配置された1対の液溜め31,32が
形成されている。この液溜め31,32は、現像液供給
配管16から供給された現像液をノズル部7の長手方向
(図3の奥行き方向)に均一に拡散させるためのもので
ある。
A slit nozzle 30 having a downward opening is formed in the nozzle portion 7. In the middle of the slit nozzle 30, a pair of upper and lower liquid reservoirs 31, 32 are formed. The liquid reservoirs 31, 32 are for uniformly diffusing the developer supplied from the developer supply pipe 16 in the longitudinal direction of the nozzle portion 7 (the depth direction in FIG. 3).

【0012】現像液圧送部2は、図1に示すように、現
像液を貯溜したポリタンク12を収納し、かつ内部が気
密に封止された加圧タンク11を有している。加圧タン
ク11の上部には、図示しない窒素ガス源から加圧され
た窒素ガスが供給される加圧配管13が開口している。
加圧配管13の途中には、給排用三方弁14及びレギュ
レータ15が加圧タンク11側からこの順に配置されて
いる。なお、三方弁14は、窒素ガスを加圧タンク11
に供給するかまたは他に排気するかを選択できる。一端
がポリタンク12の底面近傍に達する現像液供給配管1
6は、他端がノズル部7に接続されている。現像液供給
配管16の途中には、流量計17及び現像液供給弁18
がポリタンク12側からこの順で配置されている。
As shown in FIG. 1, the developing solution pressure-feeding section 2 has a pressure tank 11 for accommodating a poly tank 12 storing a developing solution and hermetically sealing the inside. A pressure pipe 13 to which pressurized nitrogen gas is supplied from a nitrogen gas source (not shown) is opened at the upper part of the pressure tank 11.
A supply / discharge three-way valve 14 and a regulator 15 are arranged in this order from the pressurizing tank 11 side in the middle of the pressurizing pipe 13. The three-way valve 14 is used to pressurize the nitrogen gas in the pressure tank 11.
Can be supplied to or exhausted to another. Developer supply pipe 1 whose one end reaches near the bottom of the plastic tank 12
The other end of 6 is connected to the nozzle part 7. A flow meter 17 and a developer supply valve 18 are provided in the middle of the developer supply pipe 16.
Are arranged in this order from the plastic tank 12 side.

【0013】水供給部20は、カップ6の外周側に上下
に配置された純水ノズルアーム21と、純水ノズルアー
ム21の上端から水平に延びる純水ノズル22とを有し
ている。純水ノズル22の先端は下方に折れ曲がってい
る。純水ノズルアーム21は、図示しない駆動部によ
り、たとえば90°水平に回動可能である。この回動に
よって、純水ノズル22は、2点鎖線で示す供給位置と
実線で示す待機位置との間で回動する。純水ノズル22
が供給位置に回動すると、先端が基板Pの中心に配置さ
れる。純水ノズル22には、純水供給弁27を介して図
示しない純水供給源が接続されている。
The water supply unit 20 has a pure water nozzle arm 21 vertically arranged on the outer peripheral side of the cup 6, and a pure water nozzle 22 extending horizontally from the upper end of the pure water nozzle arm 21. The tip of the pure water nozzle 22 is bent downward. The pure water nozzle arm 21 can be horizontally rotated, for example, by 90 ° by a driving unit (not shown). By this rotation, the pure water nozzle 22 rotates between the supply position shown by the chain double-dashed line and the standby position shown by the solid line. Pure water nozzle 22
When is rotated to the supply position, the tip is arranged at the center of the substrate P. A pure water supply source (not shown) is connected to the pure water nozzle 22 via a pure water supply valve 27.

【0014】さらに、この基板現像装置は、図4に示す
ように、マイクロコンピュータからなる制御部23を備
えている。制御部23には、基板保持部4(真空チャッ
ク)と、ノズル支持アーム8及び移動フレーム9の駆動
部と、給排用三方弁14と、純水供給弁27と、現像液
供給弁18と、モータ機構26と、純水ノズルアーム2
1の駆動部とが接続されている。さらに、制御部23に
は、ノズル支持アーム8や移動フレーム9や純水ノズル
アーム21の位置の検出を行うセンサ等の各種センサ
(図示せず)、及びその他の入出力部が接続されてい
る。
Further, as shown in FIG. 4, this substrate developing apparatus is provided with a control section 23 composed of a microcomputer. The control unit 23 includes a substrate holding unit 4 (vacuum chuck), a drive unit for the nozzle support arm 8 and the moving frame 9, a supply / discharge three-way valve 14, a pure water supply valve 27, and a developer supply valve 18. , Motor mechanism 26 and pure water nozzle arm 2
1 drive unit is connected. Further, the control unit 23 is connected to various sensors (not shown) such as a sensor for detecting the positions of the nozzle support arm 8, the moving frame 9, and the pure water nozzle arm 21, and other input / output units. .

【0015】次に、基板現像装置の動作を、図5〜図8
に示す制御フローチャートにしたがって説明する。始め
にステップS1では、基板現像装置全体の初期設定を行
う。次に、ステップS2に移行し、図示しない搬送機構
が基板Pを基板現像装置に搬入するのを待つ。この基板
Pは、予め感光性樹脂が塗布されかつ所定のパターンに
露光されたものである。基板Pが搬入されると、ステッ
プS3に移行し、基板保持部4により基板Pを真空吸着
する。
Next, the operation of the substrate developing device will be described with reference to FIGS.
A description will be given according to the control flowchart shown in FIG. First, in step S1, initial setting of the entire substrate developing apparatus is performed. Next, the process proceeds to step S2, and waits for the transport mechanism (not shown) to load the substrate P into the substrate developing apparatus. This substrate P is a substrate to which a photosensitive resin has been applied and which has been exposed in a predetermined pattern. When the substrate P is loaded, the process proceeds to step S3, and the substrate holding unit 4 suctions the substrate P by vacuum.

【0016】続いて、ステップS4で前処理を行う。図
6に示す前処理では、まずステップS11で、純水ノズ
ルアーム21を待機位置から供給位置に回動し、純水ノ
ズル22の先端を基板Pの中心に配置する。ステップS
12では、純水供給弁27を所定時間(たとえば3秒
間)開くとともに、モータ機構26により、基板保持部
4をたとえば100rpmで低速回転させる。これによ
り、純水が基板P上に滴下され、基板P全体に拡散す
る。ステップS13では、純水ノズルアーム21を供給
位置から待機位置に復帰する。ステップS14では、基
板保持部4を所定時間(たとえば17秒間)たとえば2
000rpmで高速回転させる。これにより、基板Pに
付着した純水を振り切る水切り処理を行う。ステップS
14での処理が終了すると図5のメインルーチンに戻
る。ここでは、現像液を液盛りする前に、基板Pを水で
一旦濡らして基板P上面を親水性にする。
Then, in step S4, preprocessing is performed. In the pretreatment shown in FIG. 6, first, in step S11, the pure water nozzle arm 21 is rotated from the standby position to the supply position, and the tip of the pure water nozzle 22 is placed at the center of the substrate P. Step S
At 12, the pure water supply valve 27 is opened for a predetermined time (for example, 3 seconds), and the motor mechanism 26 rotates the substrate holding unit 4 at a low speed of, for example, 100 rpm. As a result, pure water is dropped on the substrate P and diffused over the entire substrate P. In step S13, the pure water nozzle arm 21 is returned from the supply position to the standby position. In step S14, the substrate holding unit 4 is held for a predetermined time (for example, 17 seconds), for example, 2
Rotate at high speed at 000 rpm. As a result, a draining process is performed to shake off the pure water attached to the substrate P. Step S
When the process in 14 is completed, the process returns to the main routine of FIG. Here, the substrate P is once wetted with water to make the upper surface of the substrate P hydrophilic before the developing solution is poured.

【0017】続いて、図5のステップS5で液盛り処理
を行う。図7に示す液盛り処理では、始めにステップS
20でノズル部7をスタート位置に移動させる。ここで
は、ノズル部7が図9及び図10の点線位置(すなわち
基板Pの左端)に配置される。このとき、ノズル部7の
底面が基板Pから0.5〜1.5mmの隙間をあけて配
置される。
Subsequently, a puddle process is performed in step S5 of FIG. In the puddle processing shown in FIG. 7, first, step S
At 20, the nozzle unit 7 is moved to the start position. Here, the nozzle portion 7 is arranged at the dotted line position in FIG. 9 and FIG. 10 (that is, the left end of the substrate P). At this time, the bottom surface of the nozzle portion 7 is arranged with a gap of 0.5 to 1.5 mm from the substrate P.

【0018】ステップS21では、ノズル部7のノズル
スリット20から基板Pに現像液を吐出させる。この吐
出開始動作は、三方弁14を供給側に切り換えさらに現
像液供給弁18を開いて、ポリタンク12から現像液を
ノズル部7に供給することで行う。ステップS22で
は、移動フレーム9に対し基板P上での水平移動をさ
せ、図2及び図3に示すように基板Pに現像液Dを液盛
りする。ステップS23では、ノズル部7が図9及び図
10に矢印で示すように移動して基板Pの右端に到達す
るのを待つ。
In step S21, the developing solution is discharged onto the substrate P from the nozzle slit 20 of the nozzle portion 7. This discharge start operation is performed by switching the three-way valve 14 to the supply side, opening the developing solution supply valve 18, and supplying the developing solution from the plastic tank 12 to the nozzle portion 7. In step S22, the moving frame 9 is horizontally moved on the substrate P, and the developing solution D is placed on the substrate P as shown in FIGS. In step S23, it waits for the nozzle part 7 to move as shown by an arrow in FIGS. 9 and 10 and reach the right end of the substrate P.

【0019】ノズル部7が基板Pの右端に到達するとス
テップS24に移行する。ステップS24では、三方弁
14を排気側に切り換えるとともに現像液供給弁18を
閉じて、現像液の供給を停止する。ステップS25で
は、ノズル部7の移動を停止する。そしてステップS2
6で、ノズル部7を基板Pの右端斜め上方の退避位置に
退避させる。ステップS26での処理が終了すれば図5
のメインルーチンに戻る。
When the nozzle portion 7 reaches the right end of the substrate P, the process proceeds to step S24. In step S24, the three-way valve 14 is switched to the exhaust side, the developer supply valve 18 is closed, and the supply of the developer is stopped. In step S25, the movement of the nozzle unit 7 is stopped. And step S2
At 6, the nozzle portion 7 is retracted to the retracted position diagonally above the right end of the substrate P. When the processing in step S26 is completed, FIG.
Return to the main routine of.

【0020】以上の液盛り処理時には、予め前処理(ス
テップS4)において基板Pの表面が親水性になってい
ることから、現像液の使用量が少なくて済む。また現像
液の塗布スピードを高めることもできる。たとえば、ノ
ズル部7の移動速度は100〜150mm/秒であり、
そのときノズル部7から吐出される現像液の流量は3.
0〜7.0リットル/分、好ましくは3.5リットル/
分である。
At the time of the above-mentioned liquid piling treatment, since the surface of the substrate P is hydrophilic in advance in the pretreatment (step S4), the amount of the developing solution used can be small. It is also possible to increase the coating speed of the developing solution. For example, the moving speed of the nozzle unit 7 is 100 to 150 mm / sec,
At this time, the flow rate of the developing solution discharged from the nozzle portion 7 is 3.
0-7.0 liters / minute, preferably 3.5 liters / minute
Minutes.

【0021】次に、ステップS6で現像処理を行う。図
8に示す現像処理では、ステップS28において、モー
タ機構26を駆動して基板保持部4を回転させる。この
ときの基板保持部4の回転速度は1〜10rpm程度の
低速である。ステップS29では、一定時間が経過する
のを待つ。この低速回転のエネルギーにより、前処理に
よって予め親水性になっている基板Pの上面における現
像液の分布はより均一となる。すなわち、少ない現像液
でも基板Pの表面に現像液が平均的に供給される。な
お、このときに基板Pは低速で回転しているために、強
力な遠心力は発生せず、現像液が中央部分で不足するよ
うなことはない。
Next, in step S6, a developing process is performed. In the developing process shown in FIG. 8, in step S28, the motor mechanism 26 is driven to rotate the substrate holding unit 4. The rotation speed of the substrate holding unit 4 at this time is a low speed of about 1 to 10 rpm. In step S29, it waits for a certain period of time to elapse. Due to the energy of the low speed rotation, the distribution of the developer on the upper surface of the substrate P which has been made hydrophilic by the pretreatment becomes more uniform. That is, even with a small amount of developing solution, the developing solution is supplied to the surface of the substrate P on average. At this time, since the substrate P is rotating at a low speed, a strong centrifugal force is not generated, and the developer does not run short in the central portion.

【0022】ステップS29からステップS30に移行
すると、モータ機構26の回転を停止させる。ステップ
S31では、基板Pを静止させた状態を維持することで
現像を行う。一定時間が経過して現像が終了すると、図
5のメインルーチンに戻る。図5のステップS7では、
純水ノズル22により基板Pをリンス(洗浄)する。こ
のリンス時には、モータ機構26により基板保持部4を
中速回転させる。ステップS8では、基板保持部4を高
速回転させて、基板Pに対し液切り乾燥を行う。液切り
乾燥が終了すると、ステップS9に移行し、基板保持部
4による基板Pの吸着を解除する。ステップS10で
は、図示しない搬送機構が基板Pを次の処理のために排
出するのを待つ。基板Pが搬出されれば、ステップS2
に戻り、次の基板Pが搬入されるのを待つ。
When the process proceeds from step S29 to step S30, the rotation of the motor mechanism 26 is stopped. In step S31, development is performed by keeping the substrate P stationary. When the development is completed after a certain period of time, the process returns to the main routine of FIG. In step S7 of FIG.
The substrate P is rinsed (cleaned) by the pure water nozzle 22. At the time of this rinse, the motor mechanism 26 rotates the substrate holder 4 at a medium speed. In step S8, the substrate holding unit 4 is rotated at a high speed, and the substrate P is drained and dried. When the liquid-drying is completed, the process proceeds to step S9, and the suction of the substrate P by the substrate holding unit 4 is released. In step S10, the transfer mechanism (not shown) waits for the substrate P to be discharged for the next process. If the substrate P is unloaded, step S2
Then, the process waits until the next substrate P is loaded.

【0023】〔他の実施例〕 (a) 現像装置だけではなく、液盛りによって基板表
面の処理を行うエッチング装置及び剥離装置にも本発明
は適用可能である。 (b) 水供給部20で扱われる水は純水に限定される
ことはなく、たとえば界面活性剤を含んだ水でもよい。
[Other Embodiments] (a) The present invention can be applied not only to the developing device but also to an etching device and a peeling device for treating the surface of the substrate with a liquid puddle. (B) The water handled in the water supply unit 20 is not limited to pure water, and may be water containing a surfactant, for example.

【0024】[0024]

【発明の効果】本発明に係る基板処理装置では、処理液
による処理に先立って基板上面に水が供給されるので、
処理液の量が少なくても、処理液は基板表面全体に容易
に行きわたり、基板表面に処理むらが生じにくくなる。
In the substrate processing apparatus according to the present invention, since water is supplied to the upper surface of the substrate prior to the processing with the processing liquid,
Even if the amount of the treatment liquid is small, the treatment liquid easily spreads over the entire surface of the substrate, and uneven treatment on the substrate surface hardly occurs.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による基板現像装置のブロッ
ク模式図。
FIG. 1 is a schematic block diagram of a substrate developing apparatus according to an embodiment of the present invention.

【図2】液盛り動作中のノズル部の斜視部分図。FIG. 2 is a perspective partial view of a nozzle portion during a liquid piling operation.

【図3】図2のIII −III 断面図。FIG. 3 is a sectional view taken along line III-III of FIG.

【図4】基板現像装置の制御部構成を示すブロック模式
図。
FIG. 4 is a block schematic diagram showing a configuration of a control unit of the substrate developing device.

【図5】基板現像装置の制御フローチャート。FIG. 5 is a control flowchart of the substrate developing device.

【図6】基板現像装置の制御フローチャート。FIG. 6 is a control flowchart of the substrate developing device.

【図7】基板現像装置の制御フローチャート。FIG. 7 is a control flowchart of the substrate developing device.

【図8】基板現像装置の制御フローチャート。FIG. 8 is a control flowchart of the substrate developing device.

【図9】液盛り処理の一状態を示す平面概略図。FIG. 9 is a schematic plan view showing one state of the liquid piling process.

【図10】図9のX矢視図。FIG. 10 is a view on arrow X in FIG.

【符号の説明】[Explanation of symbols]

1 現像処理部 4 基板保持部 5 現像液供給部 20 水供給部 26 モータ機構 P 基板 1 Development Processing Section 4 Substrate Holding Section 5 Developer Solution Supply Section 20 Water Supply Section 26 Motor Mechanism P Substrate

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 G03F 7/16 501 7/30 502 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location G03F 7/16 501 501 7/30 502

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板に所定の処理液を供給して前記基板の
表面処理を行う基板処理装置であって、 前記基板を水平に保持する基板保持部と、 前記基板保持部に保持された基板上面に水を供給する水
供給手段と、 前記水供給手段によって濡れた基板を水切りする水切り
手段と、 前記水切り手段による水切り後、前記基板上面に処理液
を液盛りする処理液供給手段と、を備えた基板処理装
置。
1. A substrate processing apparatus for performing a surface treatment of a substrate by supplying a predetermined processing liquid to the substrate, the substrate holding unit holding the substrate horizontally, and the substrate held by the substrate holding unit. Water supply means for supplying water to the upper surface, a drainer means for draining the substrate wet by the water supply means, and a treatment liquid supply means for piling a treatment liquid on the upper surface of the substrate after draining by the water draining means, Substrate processing equipment provided.
JP31212393A 1993-12-13 1993-12-13 Substrate treatment device Pending JPH07169668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31212393A JPH07169668A (en) 1993-12-13 1993-12-13 Substrate treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31212393A JPH07169668A (en) 1993-12-13 1993-12-13 Substrate treatment device

Publications (1)

Publication Number Publication Date
JPH07169668A true JPH07169668A (en) 1995-07-04

Family

ID=18025531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31212393A Pending JPH07169668A (en) 1993-12-13 1993-12-13 Substrate treatment device

Country Status (1)

Country Link
JP (1) JPH07169668A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093170A1 (en) * 2003-04-14 2004-10-28 Tokyo Electron Limited Developing method and developing device
KR100618723B1 (en) * 1999-08-19 2006-08-31 동경 엘렉트론 주식회사 Resist pattern forming method
JP2008182257A (en) * 2008-03-05 2008-08-07 Dainippon Screen Mfg Co Ltd Developing device and a development method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618723B1 (en) * 1999-08-19 2006-08-31 동경 엘렉트론 주식회사 Resist pattern forming method
WO2004093170A1 (en) * 2003-04-14 2004-10-28 Tokyo Electron Limited Developing method and developing device
JP2008182257A (en) * 2008-03-05 2008-08-07 Dainippon Screen Mfg Co Ltd Developing device and a development method

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