JPH07166348A - Method and apparatus for magnetron sputtering - Google Patents

Abstract

PURPOSE: To execute magnetron sputtering over a wide region of a cathode surface.

CONSTITUTION: The volume of the cathode 4 surface to be sputtered is affected by a magnetic field and the magnetic lines 301 and 302 of force of the magnetic field intersecting twice with the cathode 4 surface spread to a region larger than 80% of the entire part of the cathode surface area in a magnetron sputtering method. A discharge initiation pressure has a value above 3×10^-2 Pa. A discharge stopping pressure has a value above 1.5×10^-2 Pa. This method is achieved in a magnetron sputtering apparatus having the cathode surface which is defined of the regions consisting of an effective cathode region 15 occupying at least 80% of the entire part of the cathode surface to be sputtered, a central cathode region 16 and a peripheral cathode region and is sputtered.

COPYRIGHT: (C)1995,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering method and apparatus, and solves the problem of adjusting the discharge characteristics of a magnetron discharge, particularly the discharge start pressure and / or the discharge stop pressure.

[0002]

Cathode sputtering in DC glow discharge is a known process used, for example, in the formation of thin films. In conventional bipolar sputtering in glow discharge between cathode and anode, 10-100P
It was not effective because it required a high-pressure process gas of about a. Various methods have been used to achieve lower operating pressures. The most commonly used is based on the magnetron principle disclosed in US Pat. No. 3,878,085 (1975) and US Pat. No. 4,166,018 (1979). In flat plate magnetron sputtering, the magnetic field on the cathode is generated in the form of a closed tunnel due to the magnetic field lines between two concentrically arranged magnetic poles. As a result of electron drift in the crossed electric and magnetic fields, the electron trajectories become quite long. Normally, about 500 V to 10 V at a pressure at least equal to the discharge starting pressure of 5 × 10 ⁻¹ Pa to 10 Pa.
When a voltage of 00V is applied between the cathode and the vacuum chamber, a stable glow discharge is started, and then the operating pressure is adjusted to a value higher than the discharge stop pressure at which the discharge spontaneously stops. The discharge stop pressure in magnetron sputtering is usually in the range of 2 × 10 ^{−1 to 1} Pa. As an exception, J. L. Vossen and W.S. Kern edition "Th
in Film Processes "(Academic Press, New York, 197)
8 years), the magnetron glow discharge is about 1
0 ^-1 are stable at lower operating pressure Pa, the lower limit is about 5 × ^{10 -} a 2 Pa.

In addition to the conventional balanced magnetron described above, a non-balanced magnetron has also been developed.
nal of Vacuum Science and
1 of "Technology" A4 (issued in 1986)
B. published on page 96. Windows and N.W. Sav
vides's paper and "Journal of V
Acuum Science and Technology
"Agy" A9 (issued in 1991), p. Musil, S.M. Kadlec, W.C. D. Mu
It is described in a paper such as nz. The difference between a balanced magnetron and a non-balanced magnetron is that in a balanced magnetron, the magnetic field at the center of the cathode has the same strength as that of the peripheral edge, whereas in a non-balanced magnetron, the central part (non-balanced magnetron type 1) or That is, the magnetic field in any of the peripheral portions (non-equilibrium magnetron type 2) is stronger. In the unbalanced magnetron type 2, the direction of the magnetic field at the central axis is reversed at a certain distance from the cathode, where the magnetic field of the outer magnetic pole becomes dominant over the magnetic field of the inner magnetic pole. In fact, the name "non-equilibrium magnetron" is beginning to be used for the non-equilibrium magnetron type 2. This is because the plasma density in the vicinity of the substrate is higher in the non-equilibrium magnetron type 2 as compared with both the equilibrium magnetron and the non-equilibrium magnetron type 1. In all these types of magnetrons, the magnetic field near the cathode has a similar magnetic field shape, in the form of a closed tunnel of magnetic field lines between two concentric magnetic poles. Therefore, the magnetic field of these magnetrons can be called "magnetron type magnetic field". By the way, even in the non-equilibrium magnetron, the discharge stop pressure lower than the conventional one is not known.

When a combination of magnetic field and electric field is used to enable exceptionally good plasma confinement in the magnetron cathode, approximately 2 × 10 ⁻² P
The discharge stop pressure value of a was obtained. One such system is a combination of two circular magnetrons of the same size with magnets aligned in opposite directions. "IEEE Transactions on
Magnitudes 16 (5) (issued 1980), page 646. Naoe, S .; Yam
anaka, Y .; See the article by Hoshi. Czech patent application No. PV 4804-89 describes another method for achieving a low discharge stop pressure in magnetron sputtering, which combines the magnetic field of a conventional or unbalanced magnetron with a multipole field. I am using things. These systems, however, are considerably more complex than conventional magnetrons.

[0005]

The object of the present invention is to overcome the disadvantages of the prior art and to carry out magnetron sputtering at operating pressures as low as possible.

[0006]

In the magnetron sputtering method according to the present invention, a high frequency power source or a direct current power source is applied to the cathode to be sputtered to polarize the cathode negatively with respect to the anode and / or the vacuum chamber. A closed tunnel magnetic field formed by magnetic lines of force on the cathode is formed on the cathode, and then a stable glow discharge is generated between the cathode and the anode and / or the vacuum chamber at a pressure equal to or higher than the discharge starting pressure. Start and then adjust the operating pressure of the process gas to a value greater than the discharge stop pressure. The essence of the invention is that the volume on the surface of the cathode to be sputtered is influenced by a magnetic field whose shape corresponds to that of the cathode. The magnetic field lines of the magnetic field that intersect the cathode surface twice spread over as large a cathode area as possible, in particular over 80% of the total cathode surface area. The magnetic field lines of the magnetic field that intersect the cathode surface twice occur from the vicinity of the center of the cathode, and intersect the cathode again at a position away from the center. Or vice versa. That is, the magnetic field has a shape in which most of the magnetic lines of force generated from the peripheral portion of the cathode intersect with the central portion of the cathode, and similarly, most of the magnetic lines of force generated from the central portion of the cathode intersect with the peripheral portion of the cathode.

In some applications it is important to start the discharge at the lowest possible pressure. The discharge starting pressure is adjusted, for example, in the range of 3 × 10 ⁻² Pa to 10 ⁻¹ Pa. Here, the upper limit may be higher and the lower limit depends, for example, on the size of the cathode and the type of process gas used. Within this range, it is possible to use the voltage connected to the cathode to minimize the firing pressure. The value of this voltage is, for example, higher than 200V, and usually reaches the minimum discharge starting pressure in the range of 500V to 900V.

Also, among other applications, the goal is to achieve stable sputtering at the lowest possible operating pressure, ie to reach the lowest possible discharge stop pressure after the start of discharge. is there.
The discharge stop pressure is, for example, 1.5 × 10 ⁻² Pa to 5
It is adjusted within the range of × 10 ⁻² Pa. Of course, the upper limit may be higher, and the lower limit again depends, for example, on the size of the cathode and the type of process gas used.

It is still possible to adjust the magnetic flux density at the cathode surface when the shape of the magnetic field on the cathode is maintained. That is, first of all, not only the minimum discharge stop pressure can be adjusted, but also the discharge start pressure and the discharge voltage and / or the discharge current can be adjusted. Although the minimum discharge stop pressure is usually reached in the range of 250 G to 1000 G, the magnetic flux density in the center of the magnetic field line tunnel has a value higher than 50 G. The operation of the magnetron does not depend on the direction of the resulting magnetic field, i.e. whether the north pole of the magnetic field is in the center of the magnetron or at its periphery.

The minimum discharge stop pressure can also be adjusted using the discharge current. The minimum discharge stop pressure is usually reached at low values of discharge current. However, extremely low current values are excluded. The optimum current density at the cathode is usually 0.2
It is in the range of -20 mA / cm ² .

The magnetron sputtering apparatus includes a vacuum chamber having a gas inlet and a gas outlet, at least one flat cathode having a surface formed of a substance to be sputtered, and between the cathode and the vacuum chamber and / or the cathode. And a high frequency power source or a direct current power source connected between the vacuum chamber and a special anode which is insulated from the vacuum chamber and further provided with a cathode cooling water channel. The essence of the invention is to limit the spatial distribution of the magnetic field associated with the shape and size of the cathode being sputtered. The cathode surface to be sputtered has an effective cathode area defined by magnetic field lines that intersect the cathode surface twice, a central cathode area located inside and limited to the effective cathode area, and an outside of the effective cathode area. And consists of a limited peripheral cathode region. The effective cathode area according to the invention is as large as possible and occupies at least 80% of the total cathode surface to be sputtered. Also, the central cathode region,
Alternatively, the peripheral cathode area, or both, may be zero.

The cathode has a circular or substantially circular shape, with the central cathode region preferably not more than 2% of the total sputtered cathode surface and the peripheral cathode region preferably not more than 20% of the total sputtered cathode surface. Here, it is desirable that the total of both is 20% or less.

Further, the cathode may have a long shape such as a rectangle or an ellipse. In this case, the central cathode area is 10% of the total cathode surface to be sputtered.
Hereinafter, the peripheral cathode region is preferably 15% or less of the entire surface of the cathode to be sputtered. Here again, the total of both is 20% or less.

The relative limits of the above regions are not strict, and even if these limits are slightly exceeded, some effect is achieved, for example, in reducing the discharge stop pressure. But for maximum effectiveness, the actual requirements must be even more stringent.

Such stringent requirements are met by another variant of the device according to the invention. Here, the shape of the cathode is defined by the shape of the curve that defines the effective area of the cathode. For example, if the magnetic field is axisymmetric, the cathode will be circular. In the case of a magnetic field generated by a rectangular magnetic circuit, the cathode is usually not rectangular, but a shape defined by the shape and dimensions of the effective cathode area, for example oblong with rounded corners.

According to yet another variant of the device, the cathode has a rectangular shape and the periphery of the cathode is covered by a shield cover made of a non-magnetic conductor. The shield cover is electrically isolated from the cathode, the internal dimensions of which correspond to the dimensions of the active area of the cathode. The shield cover may be electrically connected to the anode or vacuum chamber, or may be maintained at a selected potential, including floating potential in the plasma. In this case, the discharge is not initiated in the space between the shield cover and the cathode periphery, but is confined in the effective cathode area.

If the magnetic field source is essentially the same as the magnetic field source of a conventional magnetron having a central cathode area of more than 10% of the total cathode area to be sputtered, a frame constructed of soft magnetic material. Is located above the outer edge of the cathode and is electrically connected to the cathode.
This attracts the magnetic field lines generated from the center of the cathode and widens the effective cathode area.

For these variants of the device, it is possible to use for example a magnetic circuit which is arranged on the back side of the cathode and which is composed of, for example, a plurality of permanent magnets or an electromagnet. Another variant describes a more flexible layout, allowing the areas of the active cathode region, the central cathode region and the peripheral cathode region to be optimally adjusted.
The essence of this variant is that the resulting magnetic field is at least two independent magnetic field sources, namely a magnetron type magnetic field source arranged behind the cathode coaxially with a central axis perpendicular to the cathode surface, and the cathode surface. It consists of the magnetic field of the source of the non-equilibrium magnetic field arranged coaxially with the central axis perpendicular to the back side of the cathode. Here, at least one of the two supply sources is an electromagnet. As the magnetron type magnetic field source, a first coil arranged coaxially with a central axis perpendicular to the cathode surface on the back side of the cathode and connected to a first current source can be used. A first core made of a soft magnetic material is arranged inside the coil. A second coil, generally larger than the cathode, can be used as the source of the unbalanced magnetic field.
Is disposed on the back side of the cathode coaxially with the central axis perpendicular to the cathode surface, and is connected to the second current supply source. On the back side of the cathode, a ring-shaped second core made of a material having high magnetic permeability is arranged around the first coil. The second coil is disposed on the second core,
The first core is connected to the back side of the first coil together with the second core by using a plate formed of a material having high magnetic permeability.

[0019]

EXAMPLES Example 1 Referring to FIG. 1, a vacuum chamber 1 is provided with a gas inlet 2 and a gas exhaust port 3, and an electrically insulated flat plate circular cathode 4 is provided inside the vacuum chamber 1. It is arranged. A DC power supply 5 is connected between the cathode 4 and the vacuum chamber 1.
The cooling water passage 6 allows the cooling liquid to flow therethrough. A magnetic field source composed of two electromagnets is arranged on the back side of the cathode 4.
The first coil 7 is used as a magnetron type magnetic field source.
Are connected to the first power supply 8. Inside the first coil 7, a first core 9 made of a magnetic material is arranged. As a supply source of the non-equilibrium magnetic field, the second coil 11 having substantially the same size as the cathode is connected to the second power supply 12. On the back side of the cathode 4, the first coil 7
A ring-shaped second core 13 made of a soft magnetic material is arranged around the inside of the second coil 11 and inside the second coil 11. The first core 9 and the second core 13 are magnetically connected to the back side of the first coil 7 using a plate 14 made of a material having a high magnetic permeability. In this embodiment, the relationship between the size of the cathode 4 and the shape of the magnetic field is as follows. That is, the effective cathode area 15 defined by the magnetic field lines 301 is constituted by almost the entire cathode surface, and the central cathode area 16 is only about 0.05% of the entire cathode surface 4 to be sputtered.
Of the peripheral cathode region 17 is not present. The magnetic field lines 302 define the effective cathode area 15. The central cathode region 16, the peripheral cathode region 17, and the effective cathode region 15 can be adjusted by utilizing the current ratio I ₂ / I ₁ . Here, I ₁ is a current from the first power supply 8 to the first coil 7, and I ₂ is a current from the second power supply 12 to the second coil 11.

Example 2 FIG. 2 is a graph showing the discharge start pressure and the discharge stop pressure in the apparatus shown in FIG. 1 as a function of the ratio of the non-equilibrium magnetic field strength to the magnetron type magnetic field strength. The device comprises a 124 mm diameter circular cathode formed from an alloy of copper and zinc. Argon was used as the process gas. The discharge current was 1 A and the discharge starting voltage was 1000V. The current ratio I ₂ / I ₁ is a measure of the ratio of both magnetic fields.
Here, I ₁ is the current from the first current supply source 8 to the first coil 7, and I ₂ is the current from the second power supply 12 to the second coil 11. Curve 2 as a function of current ratio I ₂ / I ₁
01 shows discharge start pressure, and curve 202 shows discharge stop pressure. Both curves 201 and 202 show that the current ratio I ₂ / I
_A clear minimum is shown at point B corresponding to ₁ = 2.13. This ratio corresponds to the magnetic field shape shown in FIG. Point A corresponds to the current ratio I ₂ / I ₁ = 1.25 and corresponds to the magnetic field shape shown in FIG. At point C, the current ratio I ₂ / I ₁ = 5.
0 corresponds to the magnetic field shape shown in FIG. FIG. 3, FIG. 4 and FIG. 5 show the shapes of magnetic field lines in a half of the cross section of a circular magnetron taken along a plane including the central axis of the cathode.
The magnetic field lines 301 intersect the cathode surface 4 twice, and the magnetic field lines 3
02 is the farthest line of magnetic force.
That is, the effective cathode region 15 is defined by the intersection of the magnetic field lines 302 and the cathode surface 4. The magnetic field lines 303 of FIG. 3 originate from the central cathode region 16 and do not intersect the cathode 4 twice, but they intersect, for example, the vacuum chamber 1 outside the cathode 4. Similarly, the magnetic field lines 3 in FIG.
04 originates from the peripheral cathode region 17 and does not intersect the cathode 4 twice. In FIG. 4, the central cathode region 16 and the peripheral cathode region 17 are almost absent,
The magnetic field lines 302 exactly connect the center point of the cathode 4 and its peripheral edge. That is, the effective cathode region 15
Occupy substantially the whole of the sputtered cathode surface 4, and in this configuration, the highest plasma confinement and the lowest discharge start and stop pressures can be achieved in the magnetron cathode 4.

Example 3 In a magnetron provided with a circular cathode made of copper and having a diameter of 100 mm and another cathode made of titanium, as in Example 2, the shape of the magnetic field on the cathode and the minimum discharge starting pressure were the same. The same conclusion was obtained regarding the interrelationship of discharge stop pressure.

Example 4 With a current ratio I ₂ / I ₁ = 2.13, in the same configuration as in Example 1, the discharge as a function of the voltage in the range 400 V to 1000 V introduced to the cathode to initiate the discharge. The starting pressure was measured. Discharge starting pressure is 3 × 10 ⁻² Pa
~ 8 × 10 ^-2 Pa, with a minimum value of 700 V ~
Observed in the 750V range.

Example 5 Current ratio I ₂ / I ₁ = 2.0 and discharge current 175 mA
Then, in the same structure as in Example 1, the discharge stop pressure was measured as a function of the magnetic flux density value in the range of 160 G to 600 G on the cathode surface at the center of the magnetic field line tunnel.
The discharge stop pressure is 1.5 × 10 ⁻² Pa to 2.3 × 10.
It was in the range of ^-2 Pa. The minimum value was observed at a flux density of about 400G. Comparing this example with Example 2, it can be seen that the magnetic field shape and the effective cathode region have more remarkable effects on the discharge stop pressure value than the magnetic flux density.

Example 6 The discharge stop pressure was measured as a function of the discharge current in the range of 50 mA to 3 A in the same configuration as in Example 1 with the current ratio I ₂ / I ₁ = 2.13. Discharge stop pressure is 1.5
It was in the range of × 10 ⁻² Pa to 3 × 10 ⁻² . The minimum value was observed at a discharge current of about 175 mA. This corresponds to a discharge current density of about 1.5 mA / cm ² .

Embodiment 7 Another embodiment according to the present invention is shown in FIG. FIG. 6a is a schematic cross-sectional view of a conventional magnetron cathode 4 and magnetic circuit 602 according to the prior art. FIG. 6b shows an example of a device according to the invention, and in comparison with FIG. 6a, a frame 601 made of soft magnetic material is added on the outer edge of the cathode 4, which frame 601 is electrically connected to the cathode 4. It is connected to the. The frame 601 attracts magnetic field lines very effectively and expands the effective cathode area 15,
A better magnetic field confinement is constructed on top of the sputtered cathode 4. With this design, the discharge stop pressure is significantly reduced.

The following was experimentally confirmed. Diameter 10
A conventional magnetron with a 0 mm Ti cathode shows a minimum discharge stopping pressure of 8.2 × 10 ⁻² Pa at a discharge current of 0.5 A, and when the frame 601 is added to the same magnetron, the discharge stopping is performed. The pressure is 4.
It is reduced to 3 × 10 ⁻² Pa, or about half. Yet another advantage is that with the Fe frame 601, the coil current required to minimize discharge stop pressure drops from 1.4A to 0.9A.

Embodiment 8 FIG. 7 shows an example of a design in which a magnetic field is generated by a rectangular magnetic circuit 701. The magnetic field lines 302 define the periphery of the effective cathode area 15. The shape of the cathode 4 is defined by the outer edge of the effective cathode region 15. That is, the cathode 4
Has an oblong shape with rounded corners. Therefore, the peripheral cathode region is gone, leaving only a small central cathode region 16.

Embodiment 9 FIG. 8 is a sectional view of the cathode 4 having a magnetic circuit 801. The periphery of the cathode 4 is covered with a shield cover 802. The inner size of the shield cover 802 is defined by the outer edge of the effective cathode region 15. The shield cover 802 is formed of a non-magnetic conductor and is electrically insulated from the cathode 4. The shield cover 802 is mechanically fixed to the vacuum chamber 1 via an insulating portion 803. Therefore, it is kept in a potential floating state. The shield cover 802 may form a discharge anode or may be electrically connected to the vacuum chamber. In this case, the discharge is not started in the space between the shield cover 802 and the peripheral portion of the cathode 4, but is confined in the effective cathode region 15. Therefore, in this design, it does not matter how large the peripheral cathode area 17 covered by the shield cover 802 is.

[0029]

The present invention is particularly ^{applicable to} about 1.5 × 10 ^-2 P
It can be used to initiate and sustain magnetron glow discharges at very low pressures up to the value of a. Such a magnetron discharge has an advantage that the operating parameter can be set in a wider range. When used for thin film formation,
Reduces film contamination caused by the type of process gas,
It broadens the range of properties of the formed film and reduces the probability of collisions of the sputtered atoms with the gas, which reduces the thermal rise of the atoms and allows the particles to move linearly. INDUSTRIAL APPLICABILITY The method of the present invention can be applied to film formation for so-called lift-off technology, coating of step-like structures having a large step height / step width ratio, filling of holes having a large depth / diameter ratio, and the like. However, it is needless to say that the application of the present invention is not necessarily limited to thin film formation and can be used for low pressure etching, for example.

[Brief description of drawings]

FIG. 1 is a schematic view of an embodiment of a magnetron sputtering apparatus according to the present invention.

2 is a graph showing discharge start pressure and discharge stop pressure in the device shown in FIG. 1 as a function of current ratio I ₂ / I ₁ .

3 is a diagram showing the shape of magnetic field lines in a half of a cross section of a circular magnetron, which is cut along a plane including the cathode central axis, and corresponds to point A in FIG. 2, and a current ratio I ₂ / I ₁ = 1.2.
Corresponds to 5.

FIG. 4 corresponds to point B in FIG. 2 and corresponds to current ratio I ₂ / I ₁ = 2.
It is a figure similar to FIG. 3 corresponding to FIG.

FIG. 5 corresponds to point C in FIG. 2 and corresponds to current ratio I ₂ / I ₁ = 5.
It is a figure similar to FIG. 3 corresponding to 00.

FIG. 6 shows a comparison of the shape of the cathode and magnetic field of a conventional magnetron with the design of the invention with a frame made of soft magnetic material.

FIG. 7 shows in detail a cathode having a shape defined by the shape of the effective area.

FIG. 8 is a diagram showing in detail a cathode provided with a shield cover.

[Explanation of symbols]

 1 vacuum chamber 2 gas inlet 3 gas outlet 4 cathode 5 voltage / current supply source 6 cooling circuit 7 first coil 8 first current supply source 9 first core 11 second coil 12 second current supply source 13th 2 core 14 plate 15 effective cathode region 16 central cathode region 17 peripheral cathode region 301 magnetic force line 302 magnetic force line 303 magnetic force line 304 magnetic force line

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Risky Antonin Cecco, Prague 3, Connevova 1728-118

Claims (14)

[Claims] 1. A high frequency power source or a direct current power source is applied to a cathode to be sputtered to polarize the cathode in a negative direction with respect to the anode and / or the vacuum chamber to generate a magnetic field of a closed tunnel formed by magnetic lines of force on the cathode. It is formed on the cathode, and then stable glow discharge is started between the cathode and the anode and / or the vacuum chamber at a pressure equal to or higher than the discharge starting pressure, and then the operating pressure of the process gas is changed. In a magnetron sputtering method in which the discharge stop pressure is adjusted to a value higher than the discharge stop pressure, the volume on the cathode surface to be sputtered is influenced by a magnetic field, and the magnetic field lines of the magnetic field that intersects the cathode surface twice are more than 80% of the total cathode surface area. A magnetron sputtering method characterized by spreading over a large area. 2. The discharge starting pressure is 3 × 10 ⁻² Pa.
The method according to claim 1, wherein the method has the above values. 3. The discharge stop pressure is 1.5 × 10 ^−2.
The method of claim 1, having a value of Pa or greater. 4. The method according to claim 2, wherein a minimum discharge starting pressure is adjusted by using a voltage connected to the cathode. 5. The method of claim 2, wherein the magnetic flux density at the cathode surface is used to adjust the minimum discharge stop pressure. 6. The method according to claim 3, wherein the discharge current is used to adjust the minimum discharge stop pressure. 7. A vacuum chamber having a gas inlet and a gas exhaust port, at least one flat cathode having a surface formed of a substance to be sputtered, the surface being formed in the vacuum chamber and having a cooling circuit, A high frequency power source or a direct current power source connected between the cathode and the vacuum chamber and / or between the cathode and a special anode that is insulated from the vacuum chamber and is disposed in the vacuum chamber; In a magnetron sputtering apparatus implementing the method according to claim 1, provided with a magnetic field source consisting of a closed tunnel of magnetic field lines on the cathode, the cathode surface (4) being sputtered intersects the cathode surface twice. Effective cathode area (15) defined by magnetic field lines (301, 302) and said effective cathode area (15) A central cathode region (16) located inside and limited to the effective cathode region (1
5) A magnetron, which is located outside of 5) and consists of a limited peripheral cathode region (17), said effective cathode region (15) occupying at least 80% of the whole of said sputtered cathode surface (4). Sputtering equipment. 8. The cathode (4) is circular, the central cathode region (16) is less than 2% of the total cathode surface (4) to be sputtered, and the peripheral cathode region (17) is sputtered. 20% or less of the entire cathode surface (4), and the total of both is 20%
Device according to claim 7, characterized in that: 9. The cathode (4) has an oblong shape, such as a rectangle or an ellipse, and the central cathode region (16) is 10% or less of the entire sputtered cathode surface (4), the periphery. Cathode area (1
Device according to claim 7, characterized in that 7) is less than 15% of the total surface of the cathode to be sputtered (4) and the sum of both is less than 20%. 10. Device according to claim 7, characterized in that the shape of the cathode (4) is defined by the shape of a curve defining the effective area (15) of the cathode (4). 11. A peripheral portion of the cathode (4) is covered with a shield cover (802) made of a non-magnetic electric conductor, and the shield cover is electrically insulated from the cathode (4) and has an inner size thereof. Device according to claim 7, characterized in that corresponds to the dimensions of the effective area (15) of the cathode (4). 12. A frame (6) formed from a soft magnetic material.
Device according to claim 7, characterized in that 01) is arranged above the outer edge of the cathode (4) and the frame is electrically connected to the cathode (4). 13. The magnetic field source comprises at least two independent magnetic field sources, namely, a magnetron type magnetic field source disposed on the back side of the cathode coaxially with a central axis perpendicular to the cathode surface. 8. A non-equilibrium magnetic field source disposed coaxially with a central axis perpendicular to the cathode surface on the back side of the cathode, at least one of these sources being an electromagnet. Equipment. 14. The magnetron type magnetic field source comprises:
A first coil (7) arranged on the back side of the cathode (4) coaxially with a central axis perpendicular to the surface of the cathode (4) and connected to a first current supply source (8);
A first core (9) made of a soft magnetic material is arranged inside the first coil (7), and a magnetic permeability is provided around the first coil (7) on the back side of the cathode (4). A ring-shaped second core (13) made of a high material is arranged, and the source of the non-equilibrium magnetic field is a second coil that is larger than the cathode (4), and the second coil is A second current supply source (12) arranged coaxially with a central axis perpendicular to the surface of the cathode (4) on the back side of the cathode (4).
And arranged on the second core, the first core (9) together with the second core (13) using a plate (14) made of a material having high magnetic permeability. Device according to claim 7, characterized in that it is magnetically connected to the back side of the first coil (7).