JPH0716018B2 - Photoconductive type light receiving element - Google Patents
Photoconductive type light receiving elementInfo
- Publication number
- JPH0716018B2 JPH0716018B2 JP62201265A JP20126587A JPH0716018B2 JP H0716018 B2 JPH0716018 B2 JP H0716018B2 JP 62201265 A JP62201265 A JP 62201265A JP 20126587 A JP20126587 A JP 20126587A JP H0716018 B2 JPH0716018 B2 JP H0716018B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gainas
- receiving element
- inp
- type light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は光導電型受光素子に関するものであり、特
に、その応答速度の改善された光導電型受光素子に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoconductive light receiving element, and more particularly to a photoconductive light receiving element having an improved response speed.
［従来の技術］ 光導電型受光素子は小型、高感度、安価なものであり、
光通信等に利用されている。[Prior Art] Photoconductive type photodetectors are small, highly sensitive, and inexpensive.
It is used for optical communication.
従来より、各種の半導体材料を用いた光導電型受光素子
が作成されている。第３図はたとえばＳ・Ｍ・Sze著「P
hysics of Semiconductor Devices」（第２版,744〜74
8頁,John Wiley ＆ Sons 1981年刊）に記載されている
光導電型受光素子の断面模式図である。Conventionally, photoconductive type light receiving elements using various semiconductor materials have been produced. Fig. 3 shows, for example, "P
hysics of Semiconductor Devices "(2nd edition, 744-74)
FIG. 8 is a schematic sectional view of a photoconductive type light receiving element described in page 8, John Wiley & Sons, 1981).
Ｎ型InP基板１上に、Ｎ型の格子整合したGaInAs半導体
層２が積層され、その上にＰ型GaInAs半導体層３が積層
されている。そして、該積層構造体上に電極4,4′が備
えられている。An N-type lattice-matched GaInAs semiconductor layer 2 is laminated on an N-type InP substrate 1, and a P-type GaInAs semiconductor layer 3 is laminated thereon. Then, the electrodes 4, 4'are provided on the laminated structure.
次に、該光導電型受光素子５の動作原理について説明す
る。Next, the operation principle of the photoconductive type light receiving element 5 will be described.
光導電型受光素子５に光エネルギ６が照射されると、Ｎ
型GaInAs半導体層２から電子がＰ型GaInAs半導体層３へ
飛出し、Ｎ型GaInAs半導体層２には正孔ができる。する
と、電流に寄与する電子および正孔ができ、自由に移動
できるようになる。そして、該電流は電極4,4′により
信号として取出される。このことについては、電気・電
子工学大百科事典（第25巻，第251頁，株式会社電気書
院発行,1983年）に詳述されている。When the photoconductive light receiving element 5 is irradiated with the light energy 6, N
Electrons fly out from the type GaInAs semiconductor layer 2 to the P type GaInAs semiconductor layer 3, and holes are formed in the N type GaInAs semiconductor layer 2. Then, electrons and holes that contribute to the current are generated and can move freely. Then, the current is taken out as a signal by the electrodes 4, 4 '. This is described in detail in the Encyclopedia of Electrical and Electronic Engineering (Vol. 25, 251 page, published by Denki Shoin Co., Ltd., 1983).
［発明が解決しようとする問題点］ しかしながら、一般に、従来の光導電型受光素子では、
光生成されたキャリア（電子）の寿命が長いため、応答
速度が遅いという問題点があった。[Problems to be Solved by the Invention] However, in general, in the conventional photoconductive type light receiving element,
Since the photo-generated carriers (electrons) have a long life, there is a problem that the response speed is slow.
この発明は上記問題点を解決するためになされたもの
で、応答速度が速くなるように改善された光導電型受光
素子を提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a photoconductive type light receiving element having an improved response speed.
［問題点を解決するための手段］ この発明に係る光導電型受光素子は、基板を備える。上
記基板の上に、InP層またはAlInAs層が設けられてい
る。上記基板の上にGaInAs層が設けられている。上記In
P層またはAlInAs層と、上記GaInAs層とは上記基板の上
で交互に積層されている。そして、上記GaInAs層の格子
定数を、上記InP層またはAlInAs層のそれよりも、６×1
0-4Å以上違わせていることを特徴とする。[Means for Solving Problems] A photoconductive type light receiving element according to the present invention includes a substrate. An InP layer or AlInAs layer is provided on the substrate. A GaInAs layer is provided on the substrate. Above In
The P layers or AlInAs layers and the GaInAs layers are alternately laminated on the substrate. The lattice constant of the GaInAs layer is 6 × 1 that of the InP layer or AlInAs layer.
It is characterized by making a difference of 0 -4 Å or more.
［作用］ 以上のように、本発明に係る光導電型受光素子において
は、GaInAs層の格子定数を、InP層またはAlInAs層のそ
れよりも、６×10-4Å以上違わせている。[Operation] As described above, in the photoconductive type light receiving element according to the present invention, the lattice constant of the GaInAs layer is different from that of the InP layer or the AlInAs layer by 6 × 10 −4 Å or more.
上記GaInAs層の格子定数を、上記InP層またはAlInAs層
のそれよりも６×10-4Å〜１×10-2Å違わせた場合に
は、GaInAs層中に弾性歪みが導入され、オージェ再結合
確率が高くなる。そのため、光生成キャリアの寿命が短
くなる。When the lattice constant of the GaInAs layer is different from that of the InP layer or AlInAs layer by 6 × 10 -4 Å to 1 × 10 -2 Å, elastic strain is introduced into the GaInAs layer and Auger The binding probability is high. Therefore, the life of photogenerated carriers is shortened.
また、上記GaInAs層の格子定数を、上記InP層またはAlI
nAs層のそれよりも１×10-2Å以上違わせた場合には、
上記GaInAs層中に格子欠陥が導入される。この種の格子
欠陥は一般に再結合中心として働くために、光生成キャ
リアの寿命は該格子欠陥の導入により短くなる。In addition, the lattice constant of the GaInAs layer is set to the InP layer or AlI
If the difference is more than 1 × 10 -2 Å than that of the nAs layer,
Lattice defects are introduced into the GaInAs layer. Since this type of lattice defect generally acts as a recombination center, the lifetime of photogenerated carriers is shortened by the introduction of the lattice defect.
［実施例］ 以下、この発明の実施例を図について説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例である光導電型受光素子の
断面図である。FIG. 1 is a sectional view of a photoconductive type light receiving element according to an embodiment of the present invention.
InP基板１上にInP層６またはAlInAs層６が形成され、そ
の上にGaInAs層７が形成され、さらにその上にInP層６
またはAlInAs層６が形成されている。そして、該積層構
造体上に電極4,4′が形成されている。The InP layer 6 or the AlInAs layer 6 is formed on the InP substrate 1, the GaInAs layer 7 is formed thereon, and the InP layer 6 is further formed thereon.
Alternatively, the AlInAs layer 6 is formed. Then, the electrodes 4, 4'are formed on the laminated structure.
次に、実施例にかかる光導電型受光素子の製造方法につ
いて説明する。Next, a method of manufacturing the photoconductive type light receiving element according to the embodiment will be described.
InP基板１上に、液相エピタキシャル成長法、分子線エ
ピタキシャル成長法（MPE法）、有機金属気相エピタキ
シャル成長法（OMVPE法）等により、１μｍ厚さのInP層
６またはAlInAs層６を形成する。On the InP substrate 1, a 1 μm thick InP layer 6 or AlInAs layer 6 is formed by a liquid phase epitaxial growth method, a molecular beam epitaxial growth method (MPE method), a metal organic vapor phase epitaxial growth method (OMVPE method), or the like.
OMVPE法を用いて製造する場合についてさらに詳述す
る。The case of manufacturing using the OMVPE method will be described in more detail.
ここでは、InP層６およびGaInAs層７を形成する場合に
ついて説明する。Here, the case of forming the InP layer 6 and the GaInAs layer 7 will be described.
InP基板１を導入し、トリメチルインジウムガスおよび
ホスフィンガスを600ないし650℃に加熱し、該InP基板
１上に１μｍ厚さのInP層６を形成する。次いで、トリ
メチルガリウムガス、トリメチルインジウムガスおよび
アルシンガスを600〜650℃に加熱することにより、１μ
ｍ厚さのGaInAs層７を形成する。次いで、トリメチルイ
ンジウムガスおよびホスフィンガスを600〜650℃に加熱
することにより、１μｍ厚さのInP層６を形成する。な
お、層の厚さは時間を変えることによって調節できる。InP substrate 1 is introduced and trimethylindium gas and phosphine gas are heated to 600 to 650 ° C. to form 1 μm thick InP layer 6 on InP substrate 1. Then, by heating trimethylgallium gas, trimethylindium gas and arsine gas to 600 to 650 ° C., 1 μm
A GaInAs layer 7 having a thickness of m is formed. Next, the InP layer 6 having a thickness of 1 μm is formed by heating trimethylindium gas and phosphine gas to 600 to 650 ° C. The layer thickness can be adjusted by changing the time.
また、トリメチルインジウムのガス量を調節することに
よって、これらの層の格子定数の値を調節することがで
きる。すなわち、トリメチルインジウムガスの量を多く
流すことにより、格子定数を大きくとることができる。Further, the value of the lattice constant of these layers can be adjusted by adjusting the amount of trimethylindium gas. That is, a large lattice constant can be obtained by flowing a large amount of trimethylindium gas.
なお、InP層６とGaInAs層７の格子定数の差を６×10-4
Å以上、１×10-2Å以下とすると、GaInAs層７に弾性歪
が自然に導入される。The difference in lattice constant between the InP layer 6 and the GaInAs layer 7 is 6 × 10 −4.
If it is Å or more and 1 × 10 −2 Å or less, elastic strain is naturally introduced into the GaInAs layer 7.
また、InP層６とGaInAs層７の格子定数の差を１×10-2
Å以上とすると、GaInAs層７中に格子欠陥が自然に導入
される。この格子欠陥はＸ線トポグラフ方法により確認
され得る。In addition, the difference in lattice constant between the InP layer 6 and the GaInAs layer 7 is 1 × 10 -2.
When it is Å or more, lattice defects are naturally introduced into the GaInAs layer 7. This lattice defect can be confirmed by the X-ray topography method.
次に、このような積層構造体上に、たとえばAuGe等より
なる電極4,4′を蒸着法等により形成する。なお、この
電極4,4′の接触抵抗を低減するために、400℃程度に加
熱して合金化することも可能である。Next, the electrodes 4 and 4'made of AuGe or the like are formed on such a laminated structure by a vapor deposition method or the like. In order to reduce the contact resistance of the electrodes 4 and 4 ', it is possible to heat them to about 400 ° C to alloy them.
実施例にかかる光導電型受光素子の動作原理は従来のも
の（第３図）と同じであるので、その説明を省略する。The operation principle of the photoconductive type light receiving element according to the embodiment is the same as that of the conventional one (FIG. 3), and thus the description thereof is omitted.
従来技術と異なる点は、GaInAs層７中に弾性歪または格
子欠陥が導入されている点である。The difference from the conventional technique is that elastic strain or lattice defect is introduced into the GaInAs layer 7.
GaInAs層７に弾性歪を導入することにより、GaInAs層７
中のバンド構造が変化し、オージエ再結合確率が増加す
る。再結合確率がそ増加すると、光生成キャリアの寿命
が短くなり、光導電型受光素子の応答速度を速くするこ
とができる。By introducing elastic strain into the GaInAs layer 7, the GaInAs layer 7
The inner band structure changes, and the Auger recombination probability increases. When the recombination probability increases, the life of photogenerated carriers is shortened, and the response speed of the photoconductive type light receiving element can be increased.
また、GaInAs層７中に格子欠陥が導入されると、この種
の格子欠陥は一般に再結合中心として働くために、光生
成キャリアの寿命は短くなる。光生成キャリアの寿命が
短くなると、光導電型受光素子の応答速度は速くなる。When a lattice defect is introduced into the GaInAs layer 7, this type of lattice defect generally acts as a recombination center, so that the life of photogenerated carriers is shortened. The shorter the life of the photogenerated carriers, the faster the response speed of the photoconductive type light receiving element.
なお、上記実施例ではInP層を形成する場合について説
明したが、ホスフィンガスの代わりにトリメチルアルミ
ニウムガスおよびアルシンガスを用いると、InP層の代
わりにAlInAs層が形成される。Although the case where the InP layer is formed has been described in the above-mentioned embodiment, when trimethylaluminum gas and arsine gas are used instead of the phosphine gas, the AlInAs layer is formed instead of the InP layer.
第２図はこの発明の他の実施態様を示す光導電型受光素
子の断面図である。FIG. 2 is a sectional view of a photoconductive type light receiving element showing another embodiment of the present invention.
InP基板１上に、格子定数が互いに６×10-4Å以上異な
るInP層６とGaInAs層７又は格子定数が互いに６×10-4
Å以上異なるAlInAs層６とGaInAs層７が交互に複数個、
積層されている。このように複数個積層し、その厚さを
厚くすることによって、光がより多く吸収され、より多
くの電流を得ることが可能となる。On the InP substrate 1, different lattice constants from each other 6 × 10 -4 Å or more InP layers 6 and GaInAs layer 7 or lattice constant to each other 6 × 10 -4
Å More than one different AlInAs layer 6 and GaInAs layer 7 alternately,
It is stacked. By stacking a plurality of layers in this way and increasing the thickness thereof, more light is absorbed and more current can be obtained.
なお、上記実施例では基板１にInP基板を用いた場合を
例示して説明したが、この発明はこれに限られるもので
なく、GaAs基板等を用いても実施例と同様の効果を実現
する。In the above embodiment, the case where the InP substrate is used as the substrate 1 has been described as an example. However, the present invention is not limited to this, and a GaAs substrate or the like can achieve the same effect as that of the embodiment. .
［発明の効果］ 以上説明したとおり、この発明に係る光導電型受光素子
によれば、InP層またはAlInAs層と、GaInAsが基板の上
に交互に積層されており、上記GaInAs層の格子定数を、
上記InP層またはAlInAs層のそれよりも６×10-4Å以上
違わせている。そのため、GaInAs層に弾性歪または格子
欠陥が自然と導入される。弾性歪または格子欠陥が存在
すると、GaInAs層中のバンド構造が変化し、オージエ再
結合確率が増加する。再結合確率が増加すると、光生成
キャリアの寿命は短くなる。その結果、光導電型受光素
子の応答速度が速くなる。応答速度の速い光導電型受光
素子は、光通信などの分野において非常に有効なものと
なる。[Effects of the Invention] As described above, according to the photoconductive type photodetector of the present invention, InP layers or AlInAs layers and GaInAs are alternately laminated on the substrate, and the lattice constant of the GaInAs layer is ,
The difference is 6 × 10 −4 Å or more than that of the InP layer or AlInAs layer. Therefore, elastic strain or lattice defect is naturally introduced into the GaInAs layer. The presence of elastic strain or lattice defects changes the band structure in the GaInAs layer and increases the Auger recombination probability. As the recombination probability increases, the lifetime of photogenerated carriers becomes shorter. As a result, the response speed of the photoconductive type light receiving element is increased. A photoconductive type light receiving element having a high response speed is very effective in the field of optical communication and the like.
第１図はこの発明の一実施例の断面図、第２図はこの発
明の他の実施例の断面図、第３図は従来の光導電型受光
素子の断面図である。 図において、１はInP基板、６はInP層またはAlInAs層、
７はGaInAs層、4,4′は電極である。 なお、各図中、同一符号は同一または相当部分を示す。FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of another embodiment of the present invention, and FIG. 3 is a sectional view of a conventional photoconductive type light receiving element. In the figure, 1 is an InP substrate, 6 is an InP layer or AlInAs layer,
7 is a GaInAs layer, and 4 and 4'are electrodes. In each drawing, the same reference numerals indicate the same or corresponding parts.
Claims (5)
板の上で交互に積層されている光導電型受光素子におい
て、 前記GaInAs層の格子定数を、前記InP層またはAlInAs層
のそれよりも、６×10-4Å以上違わせていることを特徴
とする、光導電型受光素子。1. A substrate, an InP layer or an AlInAs layer provided on the substrate, and a GaInAs layer provided on the substrate, the InP layer or the AlInAs layer, and the GaInAs layer. In the photoconductive type light-receiving element in which is alternately laminated on the substrate, the lattice constant of the GaInAs layer is different from that of the InP layer or AlInAs layer by 6 × 10 -4 Å or more. A photoconductive type light receiving element characterized by:
層は有機金属気相エピタキシャル成長法で形成されたも
のである特許請求の範囲第１項記載の光導電型受光素
子。2. The InP layer or AlInAs layer, and GaInAs
The photoconductive type light receiving element according to claim 1, wherein the layer is formed by a metal organic vapor phase epitaxial growth method.
第１項または第２項記載の光導電型受光素子。3. The photoconductive type light receiving element according to claim 1, wherein the substrate is an InP substrate.
たはAlInAs層のそれよりも６×10-4Å〜１×10-2Å違わ
せている、特許請求の範囲第１項記載の光導電型受光素
子。4. The lattice constant of the GaInAs layer is different from that of the InP layer or AlInAs layer by 6 × 10 −4 Å to 1 × 10 −2 Å according to claim 1. Photoconductive photodetector.
たはAlInAs層のそれよりも１×10-2Å以上違わせてい
る、特許請求の範囲第１項記載の光導電型受光素子。5. The photoconductive type light-receiving element according to claim 1, wherein the lattice constant of the GaInAs layer is different from that of the InP layer or the AlInAs layer by 1 × 10 −2 Å or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201265A JPH0716018B2 (en) | 1987-08-11 | 1987-08-11 | Photoconductive type light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62201265A JPH0716018B2 (en) | 1987-08-11 | 1987-08-11 | Photoconductive type light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6444073A JPS6444073A (en) | 1989-02-16 |
| JPH0716018B2 true JPH0716018B2 (en) | 1995-02-22 |
Family
ID=16438084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62201265A Expired - Lifetime JPH0716018B2 (en) | 1987-08-11 | 1987-08-11 | Photoconductive type light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0716018B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252221B1 (en) * | 1999-06-21 | 2001-06-26 | Agilent Technologies, Inc. | Photo-conductive switch having an improved semiconductor structure |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6255968A (en) * | 1985-09-05 | 1987-03-11 | Nec Corp | Photoconductive semiconductor photodetector |
| JPS63278282A (en) * | 1987-05-08 | 1988-11-15 | Sumitomo Electric Ind Ltd | Photoconductive photodetector |
| JPS63278283A (en) * | 1987-05-08 | 1988-11-15 | Sumitomo Electric Ind Ltd | Photoconductive photodetector |
-
1987
- 1987-08-11 JP JP62201265A patent/JPH0716018B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6444073A (en) | 1989-02-16 |
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