JPH07156399A - Ink jet recording head, and its production method - Google Patents

Abstract

PURPOSE:To contrive a simplification of an etching process and a junction process at a formation of a spacer through an anisotropic etching of a silicon monocrystal substrate. CONSTITUTION:An etching liquid used in an anisotropic etching of a silicon monocrystal has a durability, an etching-resistant layer forming a thin wall section 37 of an oscillation plate 8 has a crystal orientation (110) formed on a face of one side, and a pressure generating rooms 12, 13, an ink feeding opening and a communicating hole which becomes a reservoir are formed by executing an anisotropic etching of a silicon monocrystal substrate becoming a body of the spacer 6. A quantity of the anisotropic etching becomes stable as it is controlled by the etching-resistant layer. Besides, the oscillation plate 8 and the spacer 6 can compose a flow path composing member with an adhesion agent-less state, and further only by connecting a nozzle plate 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ink jet type recording head using a silicon single crystal substrate and a method for manufacturing the same.

[0002]

2. Description of the Related Art A nozzle plate having a nozzle opening and a vibrating plate are bonded together with a spacer interposed therebetween to form a pressure chamber,
The ink jet type recording head in which the vibrating plate is deformed by the piezoelectric vibrator does not use heat energy as a drive source for ejecting ink droplets, so there is no deterioration of the ink due to heat and high density printing is possible. The recording head is ideal for simple color printing. On the other hand, when trying to perform higher quality color printing using an ink jet recording head, higher resolution is required, so the size of the piezoelectric vibrator, the partition wall of the spacer member, etc. is inevitably reduced, and High precision is required for processing and assembly of members.

For this reason, a part manufacturing technique using anisotropic etching of a silicon single crystal substrate having a crystal axis (110) as a crystal plane capable of processing a fine shape with high precision by a relatively simple method, so-called micromachining. It has been studied to process a member constituting an ink jet recording head by applying a technique, and various techniques and methods have been proposed (for example, JP-A-3-87755, JP-A-3-87756, JP-A-3-87757, JP-A-4-2790, JP-A-4-129745, JP-A-5-62964).

These techniques are based on the premise that the piezoelectric vibrator is capable of deforming the pressure plate to an extent sufficient to cause ideal mechanical energy, that is, ink to fly, and the processing characteristics of a silicon single crystal substrate by etching are positive. In order to simplify the manufacturing process for mass-producing recording heads that can print dots stably with high resolution and to manufacture technology that can achieve stable quality, just by disclosing the method for effective use. I have not come up with a proposal.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object of the present invention is to realize a simplified etching process of a silicon single crystal substrate and easy assembly. It is to provide a novel ink jet recording head that can do this. Another object of the present invention is to propose a method for manufacturing the ink jet recording head.

[0006]

In order to solve such a problem, in the present invention, an etching resistant layer having durability to an etching solution used for anisotropic etching of a silicon single crystal is formed on one surface. Crystallographic orientation (110)
A silicon single crystal substrate having a pressure generating chamber, an ink supply port, and a through hole serving as a reservoir formed by anisotropic etching, and a nozzle opening at a pitch that matches the pressure generating chamber. A piezoelectric vibrator that expands and contracts the pressure generating chamber while bonding the nozzle plate to the nozzle plate, and the silicon single crystal substrate in a region that partitions the adjacent pressure generating chamber and ink supply port is the nozzle opening side. And the reservoir is separated so as to have a free end, and the etching resistant layer has an island portion made of a thick portion formed in a region facing the pressure generating chamber to function as a diaphragm. I did it.

[0007]

[Function] Since the silicon single crystal substrate is etched up to the etching resistant layer, the control of the etching process is simplified, the dimensional accuracy of the flow path is high, and the diaphragm and spacer are integrally manufactured without using an adhesive. Therefore, the flow path forming member can be formed only by joining the nozzle plates, the manufacturing process is simplified, and the dimensional accuracy is prevented from being lowered due to the adhesive flowing into the through hole.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below with reference to the illustrated embodiments. FIG. 1 is an assembled perspective view showing an embodiment of the present invention, and FIG. 2 is a sectional view in the case where two nozzle opening rows are provided to simplify the structure.
In the figure, reference numeral 1 is a nozzle plate, which has nozzle openings 2, 2, 2, ..., At a predetermined pitch, for example, 180 DPI.
The nozzle opening rows 4, 5, ... Having the holes 3, 3, 3 ,.

Reference numeral 6 is a spacer manufactured integrally with a diaphragm 8 which will be described later, and in order to simplify the structure, an example of a case where there are two rows of nozzle openings will be described. As shown in FIG. Through holes 22 and 22, which form pressure generating chambers 12 and 13, reservoirs 14 and 15 and ink supply ports 17 and 18 which connect these to the nozzle opening rows 2 and 3.
.., 23, 23, 23, .., through holes 24, 25 and through holes 27, 27, 27 .., 28, 28, 28.

Reference numeral 8 denotes the above-mentioned vibrating plate, which is formed integrally with the spacer 6 and faces the nozzle plate 1 so as to face the pressure generating chambers 12 and 13, the reservoirs 14 and 15, and the ink supply port 1.
7, 18 are formed, and as shown in FIG. 4, the piezoelectric vibrators 33 of the piezoelectric vibrator units 31, 31, 31 ,.
The pressure generating chamber 1
Island portions 35, 35 having rigidity so as to transmit to a large area of 2, 13 and thin portions 37, 3 in the peripheral region thereof.
7 and 7.

.. are piezoelectric vibrators,
The piezoelectric vibrating material 40, the segment electrodes 42 and 42, and the common electrodes 44 and 44 are alternately laminated in a sandwich shape, and are fixed to the fixing plate 46 in conformity with the arrangement pitch of the nozzle openings 2 and 3 to form a unit. It is summarized in 31, 31, 31. These vibrator units 31 are housed in the piezoelectric vibrator housing holes 52, 52 of the base 50 of the head,
It is fixed to the base 50 via the fixing plate 46. The segment electrodes 42, 42, 42, ... Are connected to the circuit board 56 by flexible cables 54, 54, and receive signals corresponding to print data from an external device.

The vibrator units 31, 31, 31 are housed in the unit housing holes 43, 43, 43, ... so that the free ends of the piezoelectric vibrators 33, 33, 33.
The member in which the vibration plate 8 and the spacer 6 are integrated on the surface and the nozzle plate 1 are positioned and fixed to the base 50 by the frame 58 which also functions as an electrostatic shield, and are assembled as a recording head main body. In the figure, reference numeral 60 is a fixed substrate for fixing to a printer carriage, and 61 is a fixed substrate.
The reservoirs 14, 15 are connected to an ink tank (not shown).
An ink supply port for supplying ink is shown.

As a result, the through holes 22, 22, of the spacer 6,
The openings 22 are closed by the nozzle plate 1 and the vibration plate 8 so that the pressure generating chamber 1
2, 12, 12, ..., 13, 13, 13, ..
4, 25 are reservoirs 14, 15 and further through holes 27, 2
7, 27 ..., 2828, 28 ... Ink supply port 1
7, 17, 17 ..., 18, 18, 18 ... Then, the pressure generating chambers 12 and 13 are contracted by the deformation of the vibration plate 10 in which the expansion and contraction of the piezoelectric vibrators 33 and 33 are received by the island portions 35, 35 and 35, the ink existing therein is compressed, and the nozzle openings 2 and It will be ejected from 3 as an ink droplet.

FIG. 5 shows an enlarged view of the vicinity of the through holes 12 and 13 constituting the pressure generating chamber of one embodiment of the spacer 4 described above, and has a thickness necessary for the spacer, for example, 220 μm. Since a silicon single crystal substrate having a crystal orientation (110) on its surface is manufactured by performing anisotropic etching from one surface, the surface facing the nozzle opening is open to the surface of the silicon single crystal substrate. The sloping surfaces 6b and 6b having a crystal orientation (111) that expands are formed, and the other surface 6d is formed as a crystal orientation (111) surface perpendicular to the surface of the silicon single crystal substrate.

When the trapezoidal cross section of the pressure generating chamber is positively utilized, the nozzle openings 2, 3 of the nozzle opening rows 4, 5 of the nozzle plate 1 facing each other are positively utilized as shown in FIG. Is arranged at a position covered by the slopes 6b and 6b, the distance ΔL between the nozzle opening rows can be arranged as small as possible. As the distance ΔL between the facing nozzle opening rows 4 and 5 becomes smaller, the deviation of the dot formation position due to the inclination of the entire recording head becomes smaller, so that the print quality can be improved.

The vibrating plate 8 is provided in the vicinity of the nozzle openings 2 and 3 in the base 50 except in the area where it abuts on the piezoelectric vibrator 33.
The thick portion 35a is also formed in the region supported by the pressure generating chamber 12, and the end portions 35b, 35b of the thick portion 35a are formed more than the end portions 6c, 6c on the opening side of the spacer that divides the nozzle opening row. The thin wall portions 37, 37 of the vibrating plate 8 are inadvertently formed by the spacer 6 by being configured to project into the spacer 6.
It is possible to prevent stress from being concentrated by contacting the end portions 6c and 6c of a.

Next, a manufacturing method for integrally forming the spacer 6 having the pressure generating chamber, the ink supply port, and the through hole serving as the reservoir and the diaphragm 8 having the island portion and the thin portion as described above. Will be described. In FIG. 8, reference numeral 100 has a crystal orientation (110) on the surface and is a thickness necessary to secure the thickness of the pressure generating chamber, for example, 220 μm.
In the silicon single crystal substrate of, at least the entire surface on the side where anisotropic etching is performed, in an oxygen atmosphere containing water vapor,
A silicon dioxide film (SiO ₂ ) 102 is formed by a so-called thermal oxidation method or the like, which is heated at 1000 ° C. for about 4 hours, to a thickness of, for example, 1 μm so as to function as a protective film in an etching step described later (see FIG. 8 ( a)). A photoresist film is formed on the surface opposite to the surface on which the vibration plate is formed, and a pattern corresponding to a flow path such as a pressure generating chamber is exposed and developed on the photoresist film to form a resist layer 104 (FIG. b)).

This substrate is etched with a silicon oxide etching solution, such as a buffered hydrofluoric acid solution, to remove the silicon dioxide film 102 in regions other than the resist layer 104.
As a result, the silicon dioxide film 106 corresponding to the pattern of the region defining the flow path remains on one surface of the substrate 100, and a window 108 for anisotropic etching, for example, 100 μm wide is formed (FIG. 8C). ). After the silicon dioxide film 106 is formed, the photoresist layer 104 is no longer needed, so it is removed.

On the surface opposite to the surface on which the anisotropic etching window 108 is formed, a metal material having resistance to an anisotropic etching solution such as nickel or chromium is deposited, sputtered, or ion-plated. A metal layer 110 having a thickness that can function as a thin portion of the diaphragm of the ink jet recording head, for example, 2 μm is formed by a film forming means such as the above. From the viewpoint of adhesion strength and ink resistance, it is desirable to first form a chromium layer and then a nickel layer. The metal layer 110 functions as a protective film against anisotropic etching during etching, and also functions as a thin portion 37 of the diaphragm 8 when assembled as a recording head (FIG. 8D).

A photoresist layer 112 similar to the one described above is formed on the entire surface of the metal layer 110 (FIG. 8 (e)),
A resist layer 116 for partitioning the window 114 having a width of, for example, 30 μm, which corresponds to the island portion 35 and other regions requiring a thickness, is provided (FIG. 9A). When the metal layer 110 is used as one negative electrode and plating of nickel or the like is performed until the island portion grows to a required thickness, for example, 20 μm, so-called electroforming is performed, a thick portion 118 that becomes the island portion 35 is formed. This is the case (Fig. 9 (b)). After the island portion is formed, the photoresist film 116 is unnecessary and is removed.

Then, the entire substrate is immersed in an aqueous solution of KOH maintained at a temperature of 80 ° C. with a concentration of about 25 wt%. As a result, anisotropic etching is started from the window 108 formed by the silicon dioxide film 106. Needless to say, the metal layer 110 has durability against an aqueous solution of KOH, so that the etching proceeds only from one surface where the window 108 is formed (FIG. 9C). When the silicon single crystal substrate is pulled up from the etching solution and the silicon dioxide film 106 is removed by the buffered hydrofluoric acid solution when the etching reaches the metal layer 110 in this way, the nozzle plate such as the pressure generating chamber and the vibrating plate are separated. For example, a through hole 1 having a width of 100 μm and a depth of 220 μm corresponding to a space to be formed between
A spacer and a diaphragm having a wall of, for example, 41 μm in thickness between 20, 120 and the through holes 120, 120 are completed (FIG. 9D).

The flow path forming member is completed by applying an adhesive to the opening side of the integrally formed spacer and diaphragm thus manufactured, that is, the surface of the spacer and joining the nozzle plate 1. In this invention, since the spacer and the diaphragm are integrally formed without using an adhesive and only the adhesive is used for joining with the nozzle plate, it is possible to connect the pressure generating chamber and the ink supply port with each other. The flow of the adhesive can be reduced as much as possible, and the reliability can be improved and the assembly process can be simplified.

By the way, when only the spacers manufactured by anisotropic etching are viewed alone, the reservoirs 14, 24, and 25 are separated from each other although they are integrally connected to the main body of the silicon single crystal substrate 100 at the nozzle opening side. Further, for example, it is formed as a number of elongated, so-called cantilever-shaped silicon pieces 19, 19 ... With a thickness of 41 μm and a length of 2 mm (FIGS. 3 and 6), but as a part of the diaphragm. Since the etching is performed integrally with the functioning metal layer 110, the cantilever-shaped silicon pieces 19, 19 are not displaced when the nozzle plate 1 is joined due to deformation such as bending. That is, the nozzle plate 1 is joined at an accurate position according to the etching pattern. Further, since the diaphragm having the thin wall portion and the thick wall portion is directly formed on the rigid silicon single crystal substrate, it is possible to drastically reduce breakage and warpage as compared with the case where the diaphragm is formed alone. It is possible to form an extremely high-quality diaphragm.

In the above embodiment, the silicon single crystal substrate 100 is anisotropically etched after the thick portion 118 to be the island portion is formed. e), at the stage when the process of FIG. 9A is completed (FIG. 10A), anisotropic etching is performed to form the through holes 122 that partition the pressure generating chamber and the like, and then the thick portion is formed. It can also be formed.

That is, when the metal layer 110 is exposed by anisotropic etching (FIG. 10 (b)), a window corresponding to an island portion or other region requiring a thickness is formed on the surface of the metal layer 110, as described above. Resist layer 128 partitioning 126
Are provided (FIG. 10C). The metal layer 110 may be used as one negative electrode to perform plating of nickel or the like until the island portion is grown to a required thickness to form the thick portion 130 to be the island portion (FIG. 10D).

FIG. 11 shows a second manufacturing method of the present invention. In the figure, reference numeral 100 indicates a crystal orientation (11
0) The thickness required to secure the thickness of the pressure generating chamber,
For example, on a silicon single crystal substrate having a thickness of 220 μm, at least the entire surface on which anisotropic etching is performed is heated at 1000 ° C. for about 4 hours in an oxygen atmosphere containing water vapor. Is formed to have a thickness of, for example, 1 μm so as to function as a protective film in an etching process described later (FIG. 11A).

Silicon dioxide film 132 on the non-doped side
A protective film is formed on the upper surface, etching is performed with a buffered hydrofluoric acid solution, and then the protective film is removed (FIG. 11B).
A boron dopant 136 composed of boron oxide and an organic binder is coated on the crystal surface exposed by this etching to a predetermined thickness. 600 when the coating is over
The organic binder is oxidized and removed by firing in an oxygen atmosphere at 0 ° C. for about 1 hour. Then, it is baked in an inert gas atmosphere such as nitrogen at a temperature of 1100 ° C. for about 4 hours to diffuse boron into the silicon single crystal substrate 100. (FIG.11 (c)).

As a result, boron is diffused to such a thickness that it can function as a diaphragm (FIG. 11 (d)). Then, after cleaning by boron diffusion, that is, a resist coat layer is formed again on the surface of the silicon dioxide film, the boron oxide layer 140 remaining on the surface is removed by a removing agent, and the unnecessary resist coat layer is removed. Boron diffusion layer 1 on one side
38 and a silicon boride layer 139, and a silicon dioxide film 132 on the other side is completed (FIG. 11).
(E)).

This substrate is baked in an oxygen atmosphere containing water vapor at a temperature of 600 ° C. for about 1 hour to form the silicon boride layer 13
9 is oxidized to form a film 142 of silicon dioxide and boron oxide on the surface of the boron diffusion layer 138 (FIG. 12A). Next, a photoresist layer 146 is formed on the surface of the silicon dioxide film 132, which defines a window 144 for etching a through hole that forms a flow path as described above (FIG. 12).
(B)). Then, when etching is performed with a silicon dioxide etching solution, a pattern of the silicon dioxide film 150 that defines the window 148 for forming a through hole that will be a channel is formed, and at the same time, the surface of the boron diffusion layer 138 on the other surface is oxidized. The silicon and boron oxide film 142 is removed (FIG. 12).
(C)). And the resist coat film 146 is no longer needed
To remove. On the surface of the boron diffusion layer 138, a metal layer 152 such as nickel or chromium, which will serve as an electrode, is formed to a thickness of 1 by a film forming means such as vapor deposition, sputtering, or ion plating.
It is formed with a thickness of 00 nm (FIG. 12D).

A photoresist layer 154 having a pattern for forming a thick portion such as an island portion is formed on the surface of the metal layer 152 (FIG. 13A). Metal layer 152
When the plating of nickel or the like is performed by using as a negative electrode until the island portion grows to a required thickness, a thick portion 156 to be the island portion is formed (FIG. 13B).

Next, the whole is immersed in an aqueous solution of KOH maintained at a temperature of 80 ° C. with a concentration of about 25 wt%. As a result, the silicon single crystal substrate 100 is anisotropically etched through the window 158 defined by the silicon dioxide film 150. Since the layer in which boron is diffused has durability against an aqueous solution of KOH, etching proceeds only from one surface where the window 158 is formed (FIG. 13C).

When the etching proceeds to the boundary region of the boron diffusion layer 138 in this way, the silicon dioxide film 150 is removed from the etching solution and removed by the buffered hydrofluoric acid solution, whereby the boron diffusion layer 138 and the metal layer 152 are formed. A diaphragm having a thin portion formed by electroforming and a thick portion 156 formed by electroforming and a spacer in which a through hole 160 forming a flow path is formed are completed (FIG. 13).
(D)). According to this embodiment, since the thin portion of the diaphragm is formed of the same material as the spacer, there is no peeling between the spacer and the diaphragm due to insufficient adhesion or a difference in coefficient of thermal expansion, and durability is improved. A high ink jet recording head can be realized.

Although the boron diffusion layer 138 is substantially used as the thin portion of the diaphragm in the above-mentioned embodiment, when the boron diffusion layer is made thin, a resin layer is formed for reinforcement. You may do it. That is, when the formation of the boron diffusion layer 162 having a predetermined thickness, for example, about 0.1 to 0.5 μm is completed by the above-described step (FIG. 12C), the thickness is changed by the chemical vapor deposition method or the coating method. A resin film having a thickness of about 3 μm, for example, a polyimide film 164 is formed (FIG. 14A).

A metal layer 166 is formed on the surface of the resin film 164, and a silicon dioxide film 150 which defines a window 158 of a through hole which serves as a flow channel is formed (FIG. 14B). Then, a pattern for forming a thick portion such as an island portion is formed on the surface of the metal layer 166 by the photoresist layer 167 (FIG. 14C). When the metal layer 166 is used as one negative electrode and plating of nickel or the like is performed until it grows to a required thickness as an island portion, a thick portion 168 to be an island portion is formed. Then, anisotropic etching is performed using the pattern 150 of silicon dioxide, and when the etching reaches the boron diffusion layer 162, the silicon dioxide film 150 is removed from the etching solution and removed by a buffered hydrofluoric acid solution. 162, resin film 164
Thin portion and thick portion 168 constituted by the metal layer 166 and
The diaphragm having the above and the spacer having the through hole 160 forming the flow path are integrally formed (FIG. 14D).

According to this embodiment, since the thin-walled portion of the diaphragm is made of the same material as the spacer and the resin is compounded, the flexibility as the diaphragm can be improved, while the resin is formed by the boron diffusion silicon layer. It is possible to prevent the liquid from absorbing and swelling.

In the above embodiment, the metal layers 152 and 166, which function as electrodes for forming the thick portion, are also made to function as the diaphragm. However, if necessary, only this film may be etched. It may be selectively removed. Since the metal layers 152 and 166 are extremely thin with a thickness of 100 nm, the size of other metal portions such as island portions does not substantially change even if etching is performed to remove them.

Further, in the above-mentioned embodiment, the island portion is formed and then the anisotropic etching of the silicon single crystal substrate is performed. However, the through hole is formed in the silicon single crystal substrate by the anisotropic etching. After that, the island portion may be formed. Further, in place of the boron-diffused silicon layer, a two-layer composite diaphragm of a silicon dioxide film by thermal oxidation and a resin, or a diaphragm made only of a resin material in which a thin boron-diffused layer and a silicon dioxide film are finally removed by etching. It is also possible to do so.

FIG. 15 shows a third embodiment of the present invention. In the figure, reference numeral 100 designates a crystal orientation (11
0) The thickness required to secure the thickness of the pressure generating chamber,
For example, on a silicon single crystal substrate of 220 μm, at least the entire surface on the side where anisotropic etching is performed is heated at 1000 ° C. for about 4 hours in an oxygen atmosphere containing water vapor. (SiO ₂ ) 17
0 is formed to have a thickness of, for example, 1 μm so as to function as a protective film in a silicon etching step described later (FIG. 15A).

A protective pattern for anisotropic etching is formed by silicon dioxide 172 on the side where nitriding is not performed by chemical vapor deposition of nitrogen (FIG. 15B). A layer 174 of silicon nitride (Si ₃ N ₂ ) having a thickness that can function as a thin portion of the diaphragm is formed on this substrate by a plasma chemical vapor deposition method in a nitrogen atmosphere (FIG. 15C).
Then, when anisotropic etching is performed by the same process as described above, the anisotropic etching is stopped at the silicon nitride layer 174, so that a through hole 176 to be a flow path is formed (FIG. 15D).

When anisotropic etching is completed, a photosensitive resin 178 having a thickness of, for example, 20 μm, which functions as an island portion, is applied to the surface of the silicon nitride layer 174 (FIG. 16A), and the island is formed. A pattern corresponding to an area to be a thick wall portion is exposed. As a result, the photosensitive resin in the exposed region, that is, the region that becomes the thick portion 178 is cured (FIG. 16B). By developing this, the unexposed region is removed and the island portion 180 is formed (FIG. 16C). In addition, a curing process is performed as needed.

[0041]

As described above, in the present invention,
A silicon single crystal substrate having a crystal orientation (110) in which an etching resistant layer having durability to an etching solution used for anisotropic etching of a silicon single crystal is formed on one surface is subjected to a pressure generation chamber by anisotropic etching. , The ink supply port, and a flow path forming member having a through hole serving as a reservoir, and a nozzle plate in which nozzle openings are formed at a pitch corresponding to the pressure generating chamber, are joined together, and the adjacent pressure generating chamber, ink The silicon single crystal substrate in the region that defines the supply port is continuous on the nozzle opening side and is cut off so that the reservoir is a free end, and the etching resistant layer is thick in the region facing the pressure generating chamber. Since an island part consisting of parts is formed to function as a diaphragm,
Not only can the etching amount be mechanically controlled by the anti-etching layer and the control of the etching process can be simplified. The dimensional accuracy of the flow path is high, the diaphragm and the spacer are adhesive-free, and since the flow path constituent member can be configured simply by joining the nozzle plate, the manufacturing process is simplified,
The flow of the adhesive into the flow path can be reduced, and a recording head with high printing quality can be realized.

[0042]

[Brief description of drawings]

FIG. 1 is an assembly exploded view showing an embodiment of an ink jet recording head to which the present invention is applied.

FIG. 2 is a cross-sectional view showing a structure in the vicinity of a row of nozzle openings facing each other in the same apparatus.

FIG. 3 is a top view showing an example of the structure of spacers in the same apparatus when the nozzle opening row is two rows.

FIG. 4 is a perspective view showing an example of the structure of a diaphragm in the same apparatus when the nozzle opening row is two rows.

FIG. 5 is a diagram showing a structure of a through hole of a spacer forming a pressure chamber.

FIG. 6 is a diagram showing a configuration of a flow path by removing a part of a nozzle plate.

FIG. 7 is a cross-sectional view showing a structure in the vicinity of a nozzle opening when two nozzle opening rows are arranged so as to face each other.

FIG. 8 is an explanatory view showing the first half of the steps of the first embodiment of the method of manufacturing an integrated body of the diaphragm and the spacer described above.

FIG. 9 is an explanatory diagram showing a second half of the process of the first embodiment.

FIG. 10 is an explanatory view showing a modified example in which the steps of the first embodiment of the manufacturing method of the present invention are replaced.

FIG. 11 is an explanatory view showing the first half of the steps of the second embodiment of the method of manufacturing the above-described diaphragm and spacer integrated body.

FIG. 12 is an explanatory diagram showing a process of the middle stage of the second embodiment.

FIG. 13 is an explanatory diagram showing a second half of the process of the second embodiment.

FIG. 14 is a diagram showing a modified example in which the steps of the second embodiment are changed.

FIG. 15 is a diagram showing a first half process of the third embodiment.

FIG. 16 is a diagram showing a second half of the process of the third embodiment.

[Explanation of symbols]

 1 Nozzle Plate 2, 3 Nozzle Opening 4, 5 Nozzle Opening Row 6 Spacer 8 Vibrating Plate 12, 13 Pressure Generating Chamber 17, 18 Ink Supply Port 31 Piezoelectric Vibrating Unit 33 Piezoelectric Vibrating 50 Base

Claims (12)

[Claims] 1. An anisotropic silicon single crystal substrate having a crystal orientation (110) in which an etching resistant layer having durability against an etching solution used for anisotropic etching of a silicon single crystal is formed on one surface. A flow path forming member having a pressure generating chamber, an ink supply port, and a through hole serving as a reservoir formed by etching is joined to a nozzle plate having nozzle openings formed at a pitch corresponding to the pressure generating chamber. A piezoelectric oscillator that expands and contracts the pressure generating chamber is provided, and the silicon single crystal substrate in a region that divides the pressure generating chamber and the ink supply port adjacent to each other is continuous on the nozzle opening side, and the reservoir is a free end. The etching-resistant layer functions as a vibration plate by forming an island portion having a thick portion in a region facing the pressure generating chamber. That the ink-jet recording head. 2. The etching resistant layer is a metal layer formed on one surface of the silicon single crystal substrate.
Inkjet recording head. 3. The ink jet recording head according to claim 1, wherein the etching resistant layer is a resin film. 4. The ink jet recording head according to claim 1, wherein the etching resistant layer is a boron-doped layer formed by doping one surface of the silicon single crystal substrate with boron. 5. The ink jet recording head according to claim 1, wherein the etching resistant layer is a composite layer of a boron-doped layer and a resin layer. 6. The ink jet recording head according to claim 1, wherein the etching resistant layer is silicon nitride formed by a plasma chemical vapor deposition method of nitrogen. 7. The through hole forming the pressure generating chamber has a crystal orientation (1) perpendicular to the surface of the silicon single crystal substrate.
11) surface and the crystal orientation (11
2. The ink jet recording head according to claim 1, wherein the ink jet recording head is partitioned by the inclined surface of 1) and the position is set so that the nozzle opening of the nozzle plate exists in the area covered by the inclined surface. 8. The vibrating plate has a thick portion having the same thickness as the island portion in a region in which the nozzle opening is in contact with the facing inclined surface, and the vibrating plate protrudes toward the pressure generating chamber side from the inclined surface. The ink jet recording head according to claim 7, 9. The ink jet recording head according to claim 1, wherein the thick portion is formed by a plating method. 10. The ink jet recording head according to claim 1, wherein the thick portion is made of a photosensitive resin. 11. A pressure generating chamber having a thickness necessary for the pressure generating chamber,
A step of forming an etching resistant layer on one surface of a silicon single crystal substrate having a crystal orientation (110) and a flow path pattern of silicon dioxide on the other surface; and a step of anisotropically etching the silicon single crystal substrate. A step of forming an island portion on the surface of the etching resistant layer so as to correspond to a pressure generating chamber, and a step of joining a nozzle plate to the opening side of the through hole formed by the etching, Production method. 12. A pressure generating chamber having a necessary thickness,
A step of forming an etching resistant layer on one surface of a silicon single crystal substrate having a crystal orientation (110) and a flow path pattern made of silicon dioxide on the other surface is the same as the pressure generating chamber on the surface of the etching resistant layer. Forming an island portion, anisotropically etching the silicon single crystal substrate, and joining a nozzle plate to the opening side of the through hole formed by the etching. Production method.