JP3657284B2 - Inkjet recording head and method for manufacturing the same - Google Patents

Description

[0001]
[Industrial application fields]
The present invention relates to an ink jet recording head using a silicon single crystal substrate and a method for manufacturing the same.
[0002]
[Prior art]
An ink jet recording head of a type that forms a pressure chamber by adhering a nozzle plate with a nozzle opening and a diaphragm sandwiched by a spacer to deform the diaphragm by a piezoelectric vibrator. Since no thermal energy is used as a source, the ink is not deteriorated by heat and high-density printing is possible. Therefore, the recording head is optimal for simple color printing.
On the other hand, if higher-quality color printing is performed using an ink jet recording head, a higher resolution is required. Therefore, the size of the piezoelectric vibrator, the partition wall of the spacer member is inevitably reduced, and the member High accuracy is required for processing and assembly of members.
[0003]
For this reason, a part manufacturing technique using anisotropic etching of a silicon single crystal substrate with a crystal axis (110) as a crystal plane that can process a fine shape with high accuracy by a relatively simple method, so-called micromachining technique is applied. Then, it has been studied to process the members constituting the ink jet recording head, and various techniques and techniques have been proposed (for example, Japanese Patent Laid-Open Nos. 3-187755, 3-187756, and 3). JP-A-187757, JP-A 4-2790, JP-A-4-129745, JP-A-5-62964).
[0004]
These technologies are based on the premise that the piezoelectric vibrator can deform the pressure plate to an ideal mechanical energy, that is, enough to fly ink, and actively utilize the processing characteristics of silicon single crystal substrates by etching. In order to propose a manufacturing technology that simplifies the manufacturing process and realizes stable quality for mass production of recording heads that can stably print dots with high resolution and high resolution simply by disclosing the method Is not reached.
[0005]
[Problems to be solved by the invention]
The present invention has been made in view of such circumstances, and the object of the present invention is a novel ink jet recording capable of realizing the simplification of the etching process of a silicon single crystal substrate and the ease of assembly. Is to provide a head.
Another object of the present invention is to propose a method for manufacturing the ink jet recording head.
[0006]
[Means for solving problems]
In order to solve such a problem, in the present invention, a flow path forming member in which a pressure generation chamber, an ink supply port, and a reservoir are formed by anisotropic etching of a silicon single crystal substrate having a crystal orientation (110) , The pressure generating chamber includes a vibration plate that joins a nozzle plate having nozzle openings formed at a pitch that matches the pressure generating chamber, and expands and contracts the volume of the pressure generating chamber by a piezoelectric vibrator. The region is divided by a plane having a crystal orientation (111) perpendicular to the surface of the silicon single crystal substrate and a slope having a crystal orientation (111) expanding toward the nozzle plate, and is covered with the slope. There was a nozzle opening in the nozzle plate .
[0007]
[Action]
Dot formation position due to the inclination of the whole recording head by reducing the distance between the nozzle opening rows by arranging the nozzle openings in the slope area by actively utilizing the trapezoidal cross section of the pressure generating chamber To improve printing quality.
[0008]
【Example】
Therefore, details of the present invention will be described below based on the illustrated embodiment.
FIG. 1 is an assembled perspective view showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view in which two nozzle opening rows are provided in order to simplify the structure. The nozzle plate is formed so that the nozzle opening rows 4, 5,... In which the nozzle openings 2, 2, 2,..., 3, 3,. ing.
[0009]
Reference numeral 6 denotes a spacer manufactured integrally with a diaphragm 8 to be described later. In order to simplify the structure, the nozzle opening array will be described by taking an example in the case of two nozzle opening arrays. As shown in FIG. Corresponding to the rows 2 and 3, the pressure generating chambers 12 and 13, the reservoirs 14 and 15, and the through holes 22, 22, 22..., 23, 23, 23 forming the ink supply ports 17 and 18 connecting them. ..., through holes 24, 25 and through holes 27, 27, 27, ..., 28, 28, 28, ... are formed.
[0010]
Reference numeral 8 denotes the diaphragm described above, which is formed integrally with the spacer 6 and forms pressure generating chambers 12 and 13, reservoirs 14 and 15, and ink supply ports 17 and 18 facing the nozzle plate 1. As shown in FIG. 4, the piezoelectric vibrator units 31, 31,... Are in contact with the tips of the piezoelectric vibrators 33, 33, 33 to transmit the displacement to a large area of the pressure generating chambers 12, 13. It comprises island portions 35 and 35 having rigidity and thin-walled portions 37 and 37 in the peripheral region.
[0011]
33, 33, 33,... Are piezoelectric vibrators, which are configured by alternately laminating piezoelectric vibration materials 40, segment electrodes 42, 42, and common electrodes 44, 44 in the form of sandwiches. The units 31, 31, and 31 are gathered together by being fixed to the fixed plate 46 in accordance with the arrangement pitch. These vibrator units 31 are housed in the piezoelectric vibrator housing holes 52, 52 of the head base 50 and are fixed to the base 50 via the fixing plate 46. The segment electrodes 42, 42, 42,... Are connected to the circuit board 56 by flexible cables 54, 54, and receive signals corresponding to print data from an external device.
[0012]
The vibrator units 31, 31, 31 are accommodated in the unit accommodation holes 43, 43, 43,... So that the free ends of the piezoelectric vibrators 33, 33, 33,. 6 and the nozzle plate 1 are positioned and fixed to the base 50 by a frame body 58 that also serves as an electrostatic shield, and the recording head main body is assembled. Reference numeral 60 in the figure denotes a fixed substrate for fixing to the carriage of the printer, and 61 denotes an ink supply port that communicates with an ink tank (not shown) and supplies ink to the reservoirs 14 and 15.
[0013]
As a result, the through holes 22, 22, 22,..., 23, 23, 23,... Of the spacer 6 are sealed by the nozzle plate 1 and the diaphragm 8 so that the pressure generating chambers 12, 12, 12,. 13, 13, 13..., Through holes 24, 25 are reservoirs 14, 15, and through holes 27, 27, 27..., 2828, 28 are ink supply ports 17, 17, 17. 18, 18, 18... The pressure generating chambers 12 and 13 are contracted by the deformation of the diaphragm 10 that receives the expansion and contraction of the piezoelectric vibrators 33 and 33 by the island portions 35, 35 and 35, compresses the ink existing therein, and 3 is ejected as ink droplets.
[0014]
FIG. 5 is an enlarged view of the vicinity of the through holes 12 and 13 constituting the pressure generating chamber according to an embodiment of the spacer 4 described above, and a crystal orientation (for example, 220 μm) necessary for the spacer is provided. 110) is manufactured by performing anisotropic etching from one surface, the surface facing the nozzle opening is expanded to the open side with respect to the surface of the silicon single crystal substrate. It is formed as slopes 6b and 6b having a crystal orientation (111), and the other surface 6d is formed as a surface having a crystal orientation (111) perpendicular to the surface of the silicon single crystal substrate.
[0015]
If the fact that the cross-sectional shape of the pressure generating chamber becomes trapezoidal in this way is positively utilized, the nozzle openings 2 and 3 of the nozzle opening rows 4 and 5 opposed to the nozzle plate 1 as shown in FIG. , 6b makes it possible to arrange the distance ΔL between the nozzle opening rows as small as possible. As the distance ΔL between the nozzle opening rows 4 and 5 facing each other becomes smaller in this way, the dot formation position deviation due to the inclination of the entire recording head becomes smaller, so that the printing quality can be improved.
[0016]
The diaphragm 8 forms a thick portion 35a in a region supported by the base 50 in the vicinity of the nozzle openings 2 and 3 in addition to a region in contact with the piezoelectric vibrator 33, and an end portion 35b thereof. , 35b are configured to protrude into the pressure generating chambers 12 and 13 rather than the end portions 6c and 6c on the opening side of the spacers dividing the nozzle opening row, so that the thin portions 37 and 37 of the diaphragm 8 It is possible to prevent the stress from being inadvertently brought into contact with the end portions 6c and 6c of the spacer 6a.
[0017]
Next, a manufacturing method for integrally configuring the spacer 6 having the pressure generation chamber, the ink supply port, and the reservoir serving as the reservoir and the diaphragm 8 having the island portion and the thin portion will be described. .
In FIG. 8, reference numeral 100 denotes a silicon single crystal substrate having a crystal orientation (110) on the surface and a thickness necessary for securing the thickness of the pressure generating chamber, for example, 220 μm, and at least the surface on the side where anisotropic etching is performed Overall, the silicon dioxide film (SiO ₂ ) 102 is heated at 1000 ° C. for about 4 hours in an oxygen atmosphere containing water vapor, so that the silicon dioxide film (SiO ₂ ) 102 functions as a protective film in an etching process described later. For example, it is formed at 1 μm (FIG. 8A). A photoresist film is formed on the surface opposite to the surface on which the vibration plate is formed, and a resist layer 104 is formed by exposing and developing a pattern corresponding to a flow path such as a pressure generating chamber (FIG. 8 ( b)).
[0018]
The substrate is etched with a silicon oxide etchant, for example, a buffered hydrofluoric acid solution, to remove the silicon dioxide film 102 in a region other than the resist layer 104. As a result, a silicon dioxide film 106 matching the pattern of the region defining the flow path remains on one surface of the substrate 100, and a window 108 having a width of 100 μm, for example, is formed for anisotropic etching (FIG. 8C). ). Note that after the silicon dioxide film 106 is formed, the photoresist layer 104 is not necessary and is removed.
[0019]
On the surface opposite to the surface on which the anisotropic etching window 108 is formed, a metal material having durability against an anisotropic etching solution such as nickel or chromium is deposited, or a film such as sputtering or ion platen is used. A metal layer 110 having a thickness that can function as a thin portion of the vibration plate of the ink jet recording head, for example, 2 μm, is formed by the forming means. From the viewpoint of adhesion strength and ink resistance, it is desirable to first form a chromium layer and then form a nickel layer. The metal layer 110 functions as a protective film against anisotropic etching during etching, and functions as the thin portion 37 of the diaphragm 8 when assembled as a recording head (FIG. 8D).
[0020]
A photoresist layer 112 similar to that described above is formed on the entire surface of the metal layer 110 (FIG. 8 (e)), and corresponds to the island portion 35 and other regions requiring a thickness, for example, a window 114 having a width of 30 μm. A resist layer 116 for partitioning is provided (FIG. 9A). When the metal layer 110 is used as one negative electrode and nickel or the like is plated until the island portion is grown to a necessary thickness, for example, 20 μm, so-called electroforming is performed, a thick portion 118 that becomes the island portion 35 is formed. (FIG. 9B). After the island portion is formed, the photoresist film 116 is unnecessary and is removed.
[0021]
Next, the entire substrate is immersed in an aqueous solution of KOH maintained at a temperature of 80 ° C. with a concentration of about 25 wt%. Thereby, anisotropic etching is started from the window 108 formed of the silicon dioxide film 106. Needless to say, since the metal layer 110 is durable against an aqueous solution of KOH, the etching proceeds only from one surface on which the window 108 is formed (FIG. 9C).
When the etching proceeds to the metal layer 110 in this way, the silicon single crystal substrate is pulled up from the etching solution, and the silicon dioxide film 106 is removed with a buffered hydrofluoric acid solution. An integrated body of a diaphragm and a diaphragm having a through hole 120, 120 having a width of, for example, 100 μm and a depth of 220 μm corresponding to a space to be formed therebetween, and a wall having a thickness of, for example, 41 μm between the through holes 120, 120 Is completed (FIG. 9D).
[0022]
By applying an adhesive to the opening side of the integrated spacer and diaphragm manufactured in this way, that is, on the surface of the spacer and joining the nozzle plate 1, the flow path component is completed. In the present invention, the spacer and the diaphragm are integrally formed without using an adhesive, and only the adhesive is used for joining to the nozzle plate. Therefore, the spacer and the diaphragm are connected to the pressure generating chamber and the ink supply port. The flow of the adhesive can be reduced as much as possible, and the reliability can be improved and the assembly process can be simplified.
[0023]
By the way, when only the spacers manufactured by anisotropic etching are viewed alone, the reservoirs 14, 24, and 25 are separated from each other, although they are integrally connected to the main body of the silicon single crystal substrate 100 on the nozzle opening side. Although it is formed as a large number of so-called cantilevered silicon pieces 19, 19... With a thickness of 41 μm and a length of 2 mm (FIGS. 3 and 6), the metal functions as a part of the diaphragm. Since the etching is performed integrally with the layer 110, the etching pattern does not occur when the nozzle plate 1 is joined without causing displacement due to deformation such as bending of the cantilevered silicon pieces 19, 19. It is joined to the nozzle plate 1 at the exact position of the street.
In addition, since the diaphragm having a thin part and a thick part is formed directly on the rigid silicon single crystal substrate, tearing, warping, etc. can be drastically reduced compared with the case where the diaphragm is formed alone. Thus, a very high quality diaphragm can be formed.
[0024]
In the above-described embodiment, the silicon single crystal substrate 100 is anisotropically etched after the thick portion 118 serving as the island portion is formed, but the above-described FIGS. When the step of FIG. 9 (a) is completed (FIG. 10 (a)), anisotropic etching is performed to form the through holes 122 that define the pressure generating chambers and the like, and then to form the thick portion. You can also.
[0025]
That is, at the stage where the metal layer 110 is exposed by anisotropic etching (FIG. 10B), the window 126 corresponding to the island portion and other regions where the thickness is required is defined on the surface thereof as described above. A resist layer 128 is provided (FIG. 10C). The metal layer 110 may be used as one negative electrode, and nickel or the like may be plated until the island portion is grown to a required thickness to form the thick portion 130 that becomes the island portion (FIG. 10D).
[0026]
FIG. 11 shows a second manufacturing method of the present invention. In FIG. 11, reference numeral 100 denotes a silicon single piece having a crystal orientation (110) and a thickness necessary for securing the thickness of the pressure generating chamber, for example, 220 μm. A silicon dioxide film 132 is etched by a so-called thermal oxidation method, which will be described later, which is heated at 1000 ° C. for about 4 hours in an oxygen atmosphere containing water vapor on at least the entire surface of the crystal substrate on which anisotropic etching is performed. It is formed with a thickness that functions as a protective film in the process, for example, 1 μm (FIG. 11A).
[0027]
A protective film is formed on the non-doped silicon dioxide film 132 and etching is performed with a buffered hydrofluoric acid solution, after which the protective film is removed (FIG. 11B). A boron dopant 136 made of boron oxide and an organic binder is coated to a predetermined thickness on the crystal plane exposed by this etching. When coating is completed, the organic binder is oxidized and removed by baking in an oxygen atmosphere at 600 ° C. for about 1 hour. Next, boron is diffused into the silicon single crystal substrate 100 by baking in an inert gas atmosphere such as nitrogen at a temperature of 1100 ° C. for about 4 hours. (FIG. 11 (c)).
[0028]
As a result, boron diffuses to such a thickness that it can function as a diaphragm (FIG. 11D). Next, after the completion of boron diffusion, that is, the resist coating layer is again formed on the surface of the silicon dioxide film, the boron oxide layer 140 remaining on the surface is removed with a remover, and the unnecessary resist coating layer is removed. A substrate having a boron diffusion layer 138 and a silicon boride layer 139 on one side and a silicon dioxide film 132 on the other side is completed (FIG. 11E).
[0029]
This substrate is baked in an oxygen atmosphere containing water vapor at a temperature of 600 ° C. for about 1 hour to oxidize the silicon boride layer 139 to form a silicon dioxide / boron oxide film 142 on the surface of the boron diffusion layer 138 (FIG. 12). (A)). Next, a photoresist layer 146 is formed on the surface of the silicon dioxide film 132 to partition a window 144 for etching a through hole that forms a flow path as described above (FIG. 12B). When etching is performed with the silicon dioxide etching solution, a pattern of the silicon dioxide film 150 that defines the window 148 for forming a through hole serving as a flow path is formed. The silicon and boron oxide film 142 is removed (FIG. 12C). Then, the resist coat film 146 that has become unnecessary is removed. A metal layer 152 such as nickel or chromium serving as an electrode is formed on the surface of the boron diffusion layer 138 with a thickness of 100 nm by film forming means such as vapor deposition, sputtering, or ion plating (FIG. 12D).
[0030]
A photoresist layer 154 having a pattern for forming a thick portion such as an island portion is formed on the surface of the metal layer 152 (FIG. 13A). When plating with nickel or the like is performed using the metal layer 152 as a negative electrode until the island portion is grown to a required thickness, a thick portion 156 that becomes an island portion is formed (FIG. 13B).
[0031]
Next, the whole is immersed in an aqueous solution of KOH maintained at a temperature of 80 ° C. with a concentration of about 25 wt%. Thereby, the silicon single crystal substrate 100 is subjected to anisotropic etching from the window 158 defined by the silicon dioxide film 150. Since the layer in which boron is diffused has durability against an aqueous solution of KOH, etching proceeds only from one surface where the window 158 is formed (FIG. 13C).
[0032]
When the etching proceeds to the boundary region of the boron diffusion layer 138 in this way, the silicon dioxide film 150 is removed from the etching solution by using a buffered hydrofluoric acid solution, and the thin wall formed by the boron diffusion layer 138 and the metal layer 152. And a diaphragm having a thick part 156 formed by electroforming and a spacer formed with a through hole 160 constituting a flow path are completed (FIG. 13D).
According to this embodiment, since the thin portion of the diaphragm is formed of the same material as the spacer, there is no separation between the spacer and the diaphragm due to insufficient adhesion or a difference in thermal expansion coefficient, and durability is improved. A high ink jet recording head can be realized.
[0033]
In the above-described embodiment, the boron diffusion layer 138 is substantially used as a thin portion of the diaphragm. However, when the boron diffusion layer is thinned, a resin layer is formed for reinforcement. Also good. That is, when the formation of the boron diffusion layer 162 having a predetermined thickness, for example, about 0.1 to 0.5 μm, is completed by the above-described process (FIG. 12C), the thickness is increased by chemical vapor deposition or coating. A resin film having a thickness of about 3 μm, for example, a polyimide film 164 is formed (FIG. 14A).
[0034]
A metal layer 166 is formed on the surface of the resin film 164, and a silicon dioxide film 150 that defines a through-hole window 158 serving as a flow path is formed (FIG. 14B). Then, a pattern for forming a thick portion such as an island portion is formed on the surface of the metal layer 166 by the photoresist layer 167 (FIG. 14C). When plating of nickel or the like is performed using the metal layer 166 as one negative pole until the island portion is grown to a required thickness, a thick portion 168 that becomes an island portion is formed. Then, anisotropic etching is performed using the silicon dioxide pattern 150. When the etching proceeds to the boron diffusion layer 162, the silicon dioxide film 150 is removed from the etching solution by the buffered hydrofluoric acid solution. 162, an integrated body of a diaphragm having a thin portion and a thick portion 168 constituted by a resin film 164 and a metal layer 166, and a spacer having a through hole 160 forming a flow path is completed (FIG. 14 ( d)).
[0035]
According to this embodiment, since the resin is compounded by adding the thin portion of the diaphragm to the same material as the spacer, the flexibility as the diaphragm can be improved, while the resin is absorbed by the boron diffusion silicon layer. It is possible to prevent swelling.
[0036]
In the above-described embodiment, the metal layers 152 and 166 that function as electrodes for forming the thick portion are also made to function as the diaphragm, but only this film is selectively etched by etching as necessary. It may be removed. Since these metal layers 152 and 166 are extremely thin with a thickness of 100 nm, the size of other metal parts such as island parts does not substantially change even if etching is performed to remove them.
[0037]
In the above-described embodiment, the anisotropic etching of the silicon single crystal substrate is performed after the island portion is formed. However, after the through holes are formed in the silicon single crystal substrate by anisotropic etching. An island part may be formed. Also, instead of the boron diffusion silicon layer, a two-layer composite vibration plate of a silicon dioxide film and a resin by thermal oxidation, or a vibration plate only of a resin material from which a thin boron diffusion layer or a silicon dioxide film is finally removed by etching, It is also possible to do.
[0038]
FIG. 15 shows a third embodiment of the present invention. In the figure, reference numeral 100 denotes a silicon having a crystal orientation (110) and a thickness necessary for securing the thickness of the pressure generating chamber, for example, 220 μm. a single crystal substrate, the entire surface on the side to perform at least anisotropic etching, in an oxygen atmosphere containing water vapor, heated about 4 hours at 1000 ° C., oxide film of silicon by so-called thermal oxidation (SiO ₂₎ 170 is formed to a thickness that functions as a protective film in a later-described silicon etching step, for example, 1 μm (FIG. 15A).
[0039]
A protective pattern for anisotropic etching is formed by silicon dioxide 172 on the side not subjected to nitriding by chemical vapor deposition of nitrogen (FIG. 15B).
A silicon nitride (Si ₃ N ₂ ) layer 174 having a thickness sufficient to function as a thin portion of the diaphragm is formed by plasma chemical vapor deposition in a nitrogen atmosphere (FIG. 15C). Next, when anisotropic etching is performed by the same process as described above, the anisotropic etching stops at the silicon nitride layer 174, so that a through hole 176 serving as a flow path is formed (FIG. 15D).
[0040]
When the anisotropic etching is completed, a photosensitive resin 178 having a thickness that functions as an island portion, for example, 20 μm, is applied to the surface of the silicon nitride layer 174 (FIG. 16A), and the island portion has the same thickness. A pattern matching the area to be a flesh portion is exposed. As a result, the photosensitive resin in the exposed region, that is, the region that becomes the thick portion 178 is cured (FIG. 16B). By developing this, an unexposed area is removed, and an island portion 180 is formed (FIG. 16C). In addition, a hardening process is performed as needed.
[0041]
【The invention's effect】
As described above, according to the present invention, the nozzle openings are arranged in the slope region of the pressure generating chamber, thereby reducing the distance between the nozzle opening rows and eliminating the deviation of the dot formation position due to the inclination of the entire recording head. Printing quality can be improved.
[Brief description of the drawings]
FIG. 1 is an exploded view showing an embodiment of an ink jet recording head to which the present invention is applied.
FIG. 2 is a cross-sectional view showing a structure in the vicinity of an opposing nozzle opening row in the apparatus.
FIG. 3 is a top view showing an example of the structure of the spacer in the apparatus according to the embodiment when there are two nozzle opening rows.
FIG. 4 is a perspective view showing an example of the structure of the diaphragm in the above-described apparatus when there are two nozzle opening rows.
FIG. 5 is a view showing a structure of a through hole of a spacer forming a pressure chamber.
FIG. 6 is a diagram illustrating a configuration of a flow path by removing a part of a nozzle plate.
FIG. 7 is a cross-sectional view showing a structure in the vicinity of a nozzle opening when two nozzle opening rows are arranged facing each other.
FIG. 8 is an explanatory view showing the first half of the first embodiment of the method for manufacturing the above-described integrated diaphragm and spacer.
FIG. 9 is an explanatory diagram showing a latter half of the process of the first embodiment.
FIG. 10 is an explanatory view showing a modification in which the steps of the first embodiment of the manufacturing method of the present invention are replaced.
FIG. 11 is an explanatory view showing the first half of the second embodiment of the method for manufacturing the above-described integral diaphragm and spacer.
FIG. 12 is an explanatory diagram showing a process in the middle of the second embodiment.
FIG. 13 is an explanatory view showing the latter half of the process of the second embodiment.
FIG. 14 is a view showing a modification in which the steps of the second embodiment are changed.
FIG. 15 is a diagram showing the first half of the third embodiment.
FIG. 16 is a diagram illustrating a process in the latter half of the third embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Nozzle plate 2, 3 Nozzle opening 4, 5 Nozzle opening row | line | column 6 Spacer 8 Diaphragm 12, 13 Pressure generation chamber 17, 18 Ink supply port 31 Piezoelectric vibrator unit 33 Piezoelectric vibrator 50 Base

Claims (10)

A flow path forming member in which a pressure generating chamber, an ink supply port, and a reservoir are formed by anisotropic etching of a silicon single crystal substrate having a crystal orientation (110), and nozzle openings are formed at a pitch that matches the pressure generating chamber. And a vibrating plate that expands and contracts the volume of the pressure generating chamber by a piezoelectric vibrator,
The pressure generating chamber is partitioned by a plane having a crystal orientation (111) perpendicular to the surface of the silicon single crystal substrate and a slope having a crystal orientation (111) expanding toward the nozzle plate, An ink jet recording head in which a nozzle opening of the nozzle plate is present in a region covered with the ink. An etching resistant layer is formed on the surface of the silicon single crystal substrate, and an island portion including a thick portion is formed in a region facing the pressure generating chamber of the etching resistant layer, and the etching resistant layer and the island portion are The ink jet recording head according to claim 1, which functions as the vibration plate.   3. The ink jet recording head according to claim 2, wherein the etching resistant layer is a metal layer formed on one surface of the silicon single crystal substrate.   The ink jet recording head according to claim 2, wherein the etching resistant layer is a boron doped layer formed by doping boron on one surface of the silicon single crystal substrate.   3. The ink jet recording head according to claim 2, wherein the etching resistant layer is a composite layer of a boron doped layer and a resin layer.   3. The ink jet recording head according to claim 2, wherein the etching resistant layer is silicon nitride formed by a plasma chemical vapor deposition method of nitrogen. The diaphragm abuts region the slope which the nozzle openings are opposed, the island portion has a thick portion having the same thickness and, claim protrudes pressure generating chamber side of the inclined surface 6 Inkjet recording head. 8. The ink jet recording head according to claim 7 , wherein the thick part is formed by a plating method. The ink jet recording head according to claim 7 , wherein the thick portion is formed of a photosensitive resin. A silicon single crystal substrate having a crystal orientation (110) is anisotropically etched to have a crystal orientation (111) surface perpendicular to the surface of the silicon single crystal substrate and a crystal orientation ( 111) forming a pressure generating chamber partitioned by the slope of
Bonding the nozzle plate such that the nozzle opening faces the inclined surface;
An ink jet recording head manufacturing method comprising:

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