JPH0714936A - Vessel for semiconductor device - Google Patents
Vessel for semiconductor deviceInfo
- Publication number
- JPH0714936A JPH0714936A JP5149647A JP14964793A JPH0714936A JP H0714936 A JPH0714936 A JP H0714936A JP 5149647 A JP5149647 A JP 5149647A JP 14964793 A JP14964793 A JP 14964793A JP H0714936 A JPH0714936 A JP H0714936A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- stem
- container
- metallized layer
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
- H01L2924/16315—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，静電シールドされた樹
脂キャップ封止の半導体装置用容器の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a container for a semiconductor device, which is sealed with an electrostatically shielded resin cap.
【０００２】高周波用半導体素子，例えばＨＥＭＴ（高
電子易動度電界効果トランジスタ）の容器は，高周波特
性を保証するために静電シールドが施される。例えば，
半導体装置を安価に製造するために，その容器に樹脂容
器を使用する場合，通常，樹脂容器表面をメタライズし
て静電シールドがなされる。A container of a high frequency semiconductor device, for example, a HEMT (high electron mobility field effect transistor) is provided with an electrostatic shield in order to ensure high frequency characteristics. For example,
When a resin container is used for manufacturing a semiconductor device at low cost, the surface of the resin container is usually metallized to provide electrostatic shielding.
【０００３】しかし，樹脂容器は一般に，半導体素子が
形成されたチップを載置固定するためのステムと，チッ
プを掩覆する樹脂キャップとを別個に製造し，これを接
着して封止する樹脂キャップ封止型の容器が用いられ
る。かかる場合，非導電性接着剤が使用されるため接着
面での導通不良を誘起し易く，ステム上の接地パターン
とキャップのメタライズ層との電気的接続不良を生ずる
ため，静電シールド効果の劣化を起こすおそれが大き
い。However, a resin container is generally manufactured by separately manufacturing a stem for mounting and fixing a chip on which a semiconductor element is formed and a resin cap for covering the chip, and adhering and sealing the stem. A cap-sealed container is used. In such a case, since a non-conductive adhesive is used, it is easy to induce conduction failure on the adhesive surface, and a poor electrical connection between the ground pattern on the stem and the metallized layer of the cap may occur, resulting in deterioration of the electrostatic shield effect. There is a high risk of causing
【０００４】このため，ステムに形成された接地パター
ンとキャップのメタライズ層との電気的接続を確実にと
ることができる樹脂キャップ封止型の半導体容器が要求
されている。Therefore, there is a demand for a resin cap-encapsulated type semiconductor container which can ensure electrical connection between the ground pattern formed on the stem and the metallized layer of the cap.
【０００５】[0005]
【従来の技術】従来，樹脂キャップを使用する半導体装
置用容器は，上面の接着部分が平面に形成されたステム
に，円筒カップ状の樹脂キャップの円筒外周端面をその
平面部分に接着して組み立てられていた。かかる従来の
容器の組み立て工程と，その問題点とについて実施例を
参照して説明する。2. Description of the Related Art Conventionally, a semiconductor device container using a resin cap is assembled by adhering a cylindrical outer peripheral end face of a cylindrical cup-shaped resin cap to a flat part on a stem whose upper surface adhesive part is formed flat. It was being done. The conventional container assembling process and its problems will be described with reference to examples.
【０００６】図３は従来例ステム平面図であり，樹脂キ
ャップ封止型半導体装置用容器のステムを表している。
図４は従来例ステムＡＡ’断面図であり，図３における
ＡＡ’断面を表している。FIG. 3 is a plan view of a conventional stem, showing a stem of a resin cap-sealed semiconductor device container.
FIG. 4 is a cross-sectional view of the conventional stem AA ′, showing the AA ′ cross section in FIG.
【０００７】図３及び図４を参照して，ステム１は，外
周が上方に突出した側壁からなる封止部１ｂを有し，中
央が窪んだ断面凹字型の円筒皿状の絶縁体，例えばセラ
ミックスから構成される。Referring to FIGS. 3 and 4, the stem 1 has a sealing portion 1b having a side wall whose outer periphery protrudes upward, and a cylindrical dish-shaped insulator having a recessed cross section with a depressed center, For example, it is made of ceramics.
【０００８】半導体チップ５は，ステム上面中央の平坦
なヘッダー部１ａに裏面を接着されて搭載される。チッ
プ５上面に設けられた端子は，ボンデングワイヤにより
ヘッダー部１ａ表面に配設された導電パターン６に接続
される。導電パターン６は封止部及びステム側面上に延
在し，ステム下面に設けられたリード端子，例えばゲー
ト引出し線２，ドレイン引出し線３，又はソース引出し
線４に接続する。The semiconductor chip 5 is mounted by bonding the back surface to the flat header portion 1a at the center of the top surface of the stem. The terminal provided on the upper surface of the chip 5 is connected to the conductive pattern 6 provided on the surface of the header portion 1a by a bonding wire. The conductive pattern 6 extends on the seal portion and the side surface of the stem and is connected to a lead terminal provided on the lower surface of the stem, for example, the gate lead wire 2, the drain lead wire 3, or the source lead wire 4.
【０００９】図５は，従来例容器断面図であり，樹脂キ
ャップを用いて封止した半導体容器の断面を表してい
る。なお，図５の断面は図３中のＡＡ’断面であり，ソ
ース引出し線に沿う垂直断面である。FIG. 5 is a sectional view of a conventional container, showing a cross section of a semiconductor container sealed with a resin cap. The cross section of FIG. 5 is a cross section taken along the line AA ′ in FIG. 3, which is a vertical cross section along the source lead line.
【００１０】図５を参照して，チップ５を搭載したステ
ム１上に，チップ５を掩覆する円筒カップ状の樹脂キャ
ップ８が載置される。キャップ８とステム１とは，ステ
ム１の封止部１ｂ上端面と樹脂キャップ８のキャップ口
縁８ａ下端面とを樹脂系の接着剤１０を用いて接着す
る。即ち，従来の容器では，接着面となるステム１の封
止部１ｂ上端面と樹脂キャップ８のキャップ口縁８ａ下
端面とは，いずれも平面に加工されている。Referring to FIG. 5, a cylindrical cup-shaped resin cap 8 for covering the chip 5 is placed on the stem 1 on which the chip 5 is mounted. The cap 8 and the stem 1 are bonded to each other with a resin adhesive 10 between the upper end surface of the sealing portion 1b of the stem 1 and the lower end surface of the cap lip 8a of the resin cap 8. That is, in the conventional container, both the upper end surface of the sealing portion 1b of the stem 1 and the lower end surface of the cap lip 8a of the resin cap 8 which are adhesive surfaces are processed into flat surfaces.
【００１１】キャップ８外表面にはメタライズ層９が形
成される。このメタライズ層９はキャップ８とステム１
との接着部でステム１表面に形成された導電パターン６
に当接して電気的に接続され，接地電位にあるソース電
極に接続される結果，チップを静電シールドする効果を
奏する。A metallized layer 9 is formed on the outer surface of the cap 8. The metallized layer 9 includes a cap 8 and a stem 1.
Conductive pattern 6 formed on the surface of the stem 1 at the bonding portion with
The chip is electrostatically shielded as a result of being connected to and electrically connected to the source electrode at the ground potential.
【００１２】しかし，上述した従来の容器では，ステム
１とキャップ８の接着面がともに平面であるため，その
接着面に形成される接着剤１０の層を挟んでステム１と
キャップ８が分離し，キャップ９のメタライズ層９とス
テム１の導電パターンとの電気的接続が採れなくなる。
このため，メタライズ層９と導電パターンとを接続する
別個の手段，例えば導電ペーストによる接続を必要とす
る。However, in the above-mentioned conventional container, since the bonding surfaces of the stem 1 and the cap 8 are both flat, the stem 1 and the cap 8 are separated by sandwiching the layer of the adhesive 10 formed on the bonding surface. The electrical connection between the metallized layer 9 of the cap 9 and the conductive pattern of the stem 1 cannot be established.
Therefore, a separate means for connecting the metallized layer 9 and the conductive pattern, for example, a connection using a conductive paste is required.
【００１３】また，接着面が平面であるため接着剤１０
がキャップ８外周にはみ出す場合があり，かかる場合に
は導電ペーストを接着剤１０表面に塗布して導電路を形
成しなければならず，電気的接続の信頼性が損なわれ
る。Since the adhesive surface is flat, the adhesive 10
May protrude to the outer periphery of the cap 8. In such a case, the conductive paste must be applied to the surface of the adhesive 10 to form a conductive path, and the reliability of electrical connection is impaired.
【００１４】上記問題は，キャップ表面をメタライズし
ない場合には生じないが，これでは静電シールドをする
ことができないので，高周波素子の実装には用いること
ができない。The above problem does not occur when the surface of the cap is not metallized, but it cannot be used for mounting a high frequency element because it cannot provide electrostatic shielding.
【００１５】[0015]
【発明が解決しようとする課題】上述したように，静電
シールドのためのメタライズを施された樹脂キャップ
を，ステムに絶縁性接着剤を用いて平面からなる接着面
を相互に接着して封止する従来の半導体装置用容器で
は，接着面でのメタライズ層とステムとの電気的接続が
とれないという問題がある。また，接着面からはみ出し
た接着剤のため電気的接続路を形成しても信頼性に乏し
いという欠点があった。As described above, the metallized resin cap for the electrostatic shield is sealed by bonding the flat adhesive surfaces to each other by using an insulating adhesive on the stem. In the conventional semiconductor device container that is stopped, there is a problem that the metallized layer and the stem cannot be electrically connected on the adhesive surface. In addition, there is a drawback in that reliability is poor even if an electrical connection path is formed due to the adhesive protruding from the adhesive surface.
【００１６】本発明は，接着部に段差を設け段差側面を
接着面とすることにより，キャップ表面のメタライズ層
を接着層を介在させることなく直接ステム表面に当接で
きる構造としたもので，キャップ表面のメタライズ層の
接地を完全にとることができる絶縁性キャップで封止す
る半導体装置用容器の提供を目的としている。The present invention has a structure in which the metallization layer on the cap surface can directly contact the stem surface without interposing an adhesive layer by providing a step on the adhesive portion and using the side surface of the step as an adhesive surface. An object of the present invention is to provide a container for a semiconductor device, which is sealed with an insulating cap that can completely ground the metallized layer on the surface.
【００１７】[0017]
【課題を解決するための手段】図１は本発明の実施例断
面図であり，絶縁性キャップで封止した半導体装置の断
面を表している。FIG. 1 is a sectional view of an embodiment of the present invention and shows a section of a semiconductor device sealed with an insulating cap.
【００１８】図２は本発明の実施例一部拡大断面図であ
り，封止されたキャッブ及びステムのキャップ口縁及び
封止部を含む接着部分の構造を表している。図２
（ａ），（ｂ）及び（ｃ）はキャップ口縁及び封止部に
段差を設けた第一，第二及び第四実施例をそれぞれ表し
ており，図２（ｃ）は段差に代えてテーパ面を用いた実
施例を表している。FIG. 2 is a partially enlarged sectional view of an embodiment of the present invention, showing a structure of an adhesive portion including a cap rim of a sealed cab and a stem and a sealing portion. Figure 2
(A), (b) and (c) respectively show the first, second and fourth embodiments in which a step is provided on the cap rim and the sealing portion, and FIG. An example using a tapered surface is shown.
【００１９】上記課題を解決するために，本発明の第一
の構成は，図１並びに図２（ａ），（ｂ）及び（ｃ）を
参照して，上面に半導体チップ５を搭載するヘッダー部
１ａが設けられ，該上面に該ヘッダー部１ａを囲む封止
部１ｂが設けられた第一の絶縁体からなるステム１と，
少なくとも表面の一部にメタライズ層９が設けられた第
二の絶縁体からなる蓋状のキャップ８であって，キャッ
プ口縁８ａを絶縁性接着剤１０により該封止部１ｂに接
着して該チップ５を封止する該キャップ８とを有する半
導体装置用容器において，該封止部１ｂに，該キャップ
口縁８ａに設けられた第一の段差８ｂと嵌合し，かつ該
キャップ８表面の該メタライズ層９と該ステム１とが当
接するように形成された第二の段差１ｃが設けられ，該
第一及び第二の段差８ｂ，１ｃの対向する側面を該キャ
ップ８と該ステム１との接着面とすることを特徴として
構成し，及び，第二の構成は，第一の構成の半導体装置
用容器において，該封止部１ｂ及び該キャップ口縁８ａ
に形成された段差１ｃ，８ｂのうち該メタライズ層９と
該ステム１とが当接する面をテーパ面１２とすることを
特徴として構成する。In order to solve the above-mentioned problems, the first structure of the present invention is a header in which a semiconductor chip 5 is mounted on the upper surface with reference to FIGS. 1 and 2A, 2B and 2C. A stem 1 made of a first insulator having a portion 1a and a sealing portion 1b surrounding the header portion 1a on the upper surface;
A cap 8 made of a second insulating material having a metallized layer 9 on at least a part of its surface, wherein a cap lip 8a is adhered to the sealing portion 1b with an insulating adhesive 10. In a container for a semiconductor device having the cap 8 for sealing the chip 5, the sealing portion 1b is fitted with the first step 8b provided on the cap rim 8a, and the surface of the cap 8 is A second step 1c is formed so that the metallized layer 9 and the stem 1 are in contact with each other, and the side surfaces of the first and second steps 8b and 1c facing each other are provided with the cap 8 and the stem 1. The second configuration is the same as that of the semiconductor device container of the first configuration, in which the sealing portion 1b and the cap lip 8a are formed.
Of the steps 1c and 8b formed in the above, the surface where the metallized layer 9 and the stem 1 abut is a tapered surface 12.
【００２０】[0020]
【作用】本発明の構成では，図１，及び図２（ａ）を参
照して，キャップとステムとの接着は，キャップ及びス
テムに設けられた段差を嵌合せしめ，その対向する段差
側面に接着剤を介在させてなされる。In the structure of the present invention, referring to FIG. 1 and FIG. 2A, the cap and the stem are adhered to each other by fitting the step provided on the cap and the stem to the side surface of the opposing step. It is made with an adhesive.
【００２１】即ち，キャップ口縁８ａに，その下端面外
周を削除した形状の段差８ｂを形成する。一方，ステム
１封止部１ｂに，その上端面内周を削除した形状の段差
１ｃを形成する。本発明では，これらキャップ口縁８ａ
及びステム１封止部１ｂに形成された段差８ｂ，１ｃを
異なる高さに形成することを特徴とする。That is, a step 8b having a shape in which the outer periphery of the lower end surface is removed is formed on the cap lip 8a. On the other hand, in the stem 1 sealing portion 1b, a step 1c having a shape in which the inner circumference of the upper end surface is removed is formed. In the present invention, these cap lip 8a
Also, the steps 8b and 1c formed in the stem 1 sealing portion 1b are formed at different heights.
【００２２】このキャップ口縁８ａ及びステム１封止部
１ｂに形成された段差８ｂ，１ｃは互いに高さが異なる
ため，例えば図２（ａ）に示すようにキャップ８の段差
８ｂがステム１の段差１ｃより小さい場合，キャップ８
の段差面とステム１の段差先端面とが当接し，一方キャ
ップ８の段差先端面とステム１の段差面との間にクリア
ランス分の間隙を生ずる。Since the heights of the steps 8b and 1c formed on the cap lip 8a and the stem 1 sealing portion 1b are different from each other, the step 8b of the cap 8 is formed on the stem 1 as shown in FIG. If smaller than step 1c, cap 8
And the step end surface of the stem 1 come into contact with each other, and a clearance gap is created between the step end surface of the cap 8 and the step surface of the stem 1.
【００２３】また，キャップ８とステム１との段差８
ｂ，１ｃの対向する側面は，接着に必要な間隙を保持し
て対向する。本発明の構成では，キャップ８とステム１
の接着は，この対向する段差側面間の間隙に接着剤１０
を充填し，固化することによりなされる。なお，上記段
差側面間での接着に代えて，又は同時に，キャップ８の
段差先端面とステム１の段差面との間の間隙を接着剤で
固化し，接着することもできる。The step 8 between the cap 8 and the stem 1
The opposite side surfaces of b and 1c are opposed to each other with a gap required for bonding being maintained. In the configuration of the present invention, the cap 8 and the stem 1
Adhesion of the adhesive 10
It is made by filling and solidifying. Incidentally, instead of or at the same time as the adhesion between the step side surfaces, the gap between the step end surface of the cap 8 and the step surface of the stem 1 may be solidified with an adhesive agent for adhesion.
【００２４】本発明の上記構成において，キャップ８の
段差面とステム１の段差先端面とは当接する。即ち，キ
ャップ８外面に形成されたメタライズ層９は，その間に
接着剤が介在することなく，ステム１表面に形成された
導電パターン６に当接する。従って，メタライズ層９と
ステム１上の導電パターン６とは直接接触するから電気
的接続が容易に確保される。このため，キャップ８のメ
タライズ層６の接地が確実になされ，良好な静電シール
ドが実現される。In the above structure of the present invention, the stepped surface of the cap 8 and the stepped tip surface of the stem 1 are in contact with each other. That is, the metallized layer 9 formed on the outer surface of the cap 8 contacts the conductive pattern 6 formed on the surface of the stem 1 without an adhesive agent interposed therebetween. Therefore, since the metallized layer 9 and the conductive pattern 6 on the stem 1 are in direct contact with each other, electrical connection is easily ensured. Therefore, the metallized layer 6 of the cap 8 is reliably grounded, and a good electrostatic shield is realized.
【００２５】上記説明は，キャップ８の段差８ｂがステ
ム１の段差１ｃより小さい場合についてであるが，逆
に，キャップ８の段差８ｂがステム１の段差１ｃより大
きい場合は，容器の内部側に位置するキャップ８の段差
先端面とステム１の段差面とが当接し，一方容器の外側
に位置するキャップ８の段差面とステム１の段差先端面
との間にクリアランス分の間隙を生ずる。The above description is for the case where the step 8b of the cap 8 is smaller than the step 1c of the stem 1, but conversely, when the step 8b of the cap 8 is larger than the step 1c of the stem 1, the inner side of the container is The stepped end surface of the cap 8 and the stepped surface of the stem 1 are in contact with each other, and a gap corresponding to the clearance is formed between the stepped surface of the cap 8 located outside the container and the stepped end surface of the stem 1.
【００２６】従って，容器の内面，即ちキャップ８内面
にメタライズ層を形成した場合に，先に説明したと同様
の効果を奏する。本発明の構成において，キャップ口縁
８ａ及びステム１封止部１ｂに形成された段差８ｂ，１
ｃの高さが異なれば，キャッブ８とステム１の段差の位
置を内外入替えることもできる。例えば，図２（ｄ）を
参照して，キャップ口縁８ａの容器内側，及びステム１
封止部の容器外側を削除した形状の段差８ｂ，１ｃを形
成する。ここで，キャップ８の段差８ｂをステム１の段
差１ｃより高くすることにより，キャッブ８外表面に形
成されたメタライズ層９とステム１表面に形成された導
電パターン６とを当接させ，電気的接続を確実にするこ
とができる。Therefore, when the metallized layer is formed on the inner surface of the container, that is, the inner surface of the cap 8, the same effect as described above is obtained. In the configuration of the present invention, the steps 8b, 1 formed on the cap lip 8a and the stem 1 sealing portion 1b
If the height of c is different, the position of the step between the cab 8 and the stem 1 can be interchanged inside and outside. For example, referring to FIG. 2D, the inside of the container of the cap lip 8a and the stem 1
Steps 8b and 1c having a shape in which the outside of the container of the sealing portion is removed are formed. Here, by making the step 8b of the cap 8 higher than the step 1c of the stem 1, the metallized layer 9 formed on the outer surface of the cab 8 and the conductive pattern 6 formed on the surface of the stem 1 are brought into contact with each other to electrically The connection can be secured.
【００２７】また，容器内面にメタライズ層が形成され
る場合は，キャップ８とステム１の段差の高さを逆にす
ることで，電気的接続をとることができる。なお，記述
の構成において，図２（ｂ），（ｄ）に示すように，メ
タライズ層９及び導電パターン６を，キャップ８とステ
ム１の当接面に延在させることができる。このとき，メ
タライズ層９と導電パターン６とは広い面で接続される
ため，より確実な接続がなされるという効果を奏する。When a metallized layer is formed on the inner surface of the container, the height of the step between the cap 8 and the stem 1 can be reversed to establish electrical connection. In the described structure, the metallized layer 9 and the conductive pattern 6 can be extended to the contact surface between the cap 8 and the stem 1, as shown in FIGS. At this time, since the metallized layer 9 and the conductive pattern 6 are connected to each other over a wide surface, there is an effect that more reliable connection is achieved.
【００２８】本発明の第二の構成は，図２（ｄ）を参照
して，第一の構成においてキャッブ８とステム１とが当
接する面をテーバ面としたものである。当接面をテーバ
とすることで接触を確実にすることができる。また，接
触面積が大になるからさらに接続の確実性が担保され
る。In the second structure of the present invention, referring to FIG. 2 (d), the surface where the cab 8 and the stem 1 contact in the first structure is a taper surface. By using the contact surface as a taper, contact can be ensured. Further, the contact area is large, so that the reliability of the connection is further ensured.
【００２９】[0029]
【実施例】本発明をＨＥＭＴの容器に適用した実施例を
参照して説明する。図１を参照して，ステム１は，断面
凹字型のセラミックス板からなり，その上面凹部をヘッ
ダー部１ａとしてＨＥＭＴチップ５が搭載される。ステ
ム１下面に，左右にソース引出し線４が，紙面に対して
前後にそれぞれ図外のゲート引出し線及びドレイン引出
し線３が設けられる。これらの引出し線は，ステム１の
側面及び上面に形成された導電パターン６を通して，チ
ップ５とボンデングワイヤ７により接続される。EXAMPLE The present invention will be described with reference to an example in which it is applied to a HEMT container. Referring to FIG. 1, the stem 1 is made of a ceramic plate having a concave cross section, and the HEMT chip 5 is mounted with the concave portion on the upper surface as a header portion 1a. On the lower surface of the stem 1, source lead lines 4 are provided on the left and right sides, and a gate lead line and a drain lead line 3 (not shown) are provided on the front and back sides of the drawing. These lead lines are connected to the chip 5 and the bonding wire 7 through the conductive patterns 6 formed on the side surface and the upper surface of the stem 1.
【００３０】キャップ８は，例えば円筒カップ型又は箱
型の樹脂製の蓋であり，外表面にメタライズ層９が形成
されている。また，キャップ口縁８ａには段差８ｂが形
成され，ステム１上面周辺の封止部１ｂに形成された段
差１ｃと嵌合し，樹脂用接着剤で接着されて，チップ５
を封止する。The cap 8 is, for example, a cylindrical cup-shaped or box-shaped resin lid, and has a metallized layer 9 formed on its outer surface. Further, a step 8b is formed on the cap rim 8a, is fitted with the step 1c formed on the sealing portion 1b around the upper surface of the stem 1, and is bonded with a resin adhesive to form the chip 5
Is sealed.
【００３１】ソース引出し線４に接続される導電パター
ン６は，チップ上のソース電極に接続される他，封止用
のキャップ８表面のメタライズ層９に封止部を通して接
続される。以下，その接続部分の詳細を説明する。The conductive pattern 6 connected to the source lead-out line 4 is connected to the source electrode on the chip and also connected to the metallized layer 9 on the surface of the cap 8 for sealing through the sealing portion. The details of the connecting portion will be described below.
【００３２】図２（ａ）は，本発明の第一実施例であ
り，図１の封止部１ｂ近傍を拡大した断面を表してい
る。図１（ａ）を参照して，外面にメタライズ層９が形
成されたキャップ８の口縁下端に，その外周を切欠いた
形状の段差８ｂが形成される。一方，ステム１外周に沿
って設けられた封止部１ｂの内周に，キャップ８の段差
８ｂよりも大きな段差１ｃが設けられる。このステム１
の段差１ｃとキャップ８の段差８ｂとは嵌合し，キャッ
プ外周とステム１の段差１ｃ上端面とが互いに当接す
る。FIG. 2A shows a first embodiment of the present invention and shows an enlarged cross section of the vicinity of the sealing portion 1b of FIG. Referring to FIG. 1A, a step 8b having a notched outer periphery is formed at the lower edge of the rim of the cap 8 having the metallized layer 9 formed on the outer surface. On the other hand, a step 1c larger than the step 8b of the cap 8 is provided on the inner circumference of the sealing portion 1b provided along the outer circumference of the stem 1. This stem 1
The step 1c and the step 8b of the cap 8 are fitted to each other, and the outer circumference of the cap and the upper end surface of the step 1c of the stem 1 contact each other.
【００３３】ソース引出し線４に接続する導電パターン
６は，ステム１の外周面，段差１ｃの上端面及び内側側
面，及び段差１ｃの段差面（図２（ａ）ではヘッダー部
と同一平面に描かれている。）上に延在して形成され
る。従って，キャップ８外周に形成されたメタライズ層
９は，段差１ｃの上端面に当接し，電気的に接続され
る。The conductive pattern 6 connected to the source lead wire 4 is drawn on the outer peripheral surface of the stem 1, the upper end surface and the inner side surface of the step 1c, and the step surface of the step 1c (in FIG. 2 (a), on the same plane as the header portion). It is formed by extending above. Therefore, the metallized layer 9 formed on the outer periphery of the cap 8 contacts the upper end surface of the step 1c and is electrically connected.
【００３４】キャップ８とステム１の接着は，段差８
ｂ，１ｃの対向する側面でなされる。先ず，接着面とな
る面に導電パターン６が形成されている場合は，導電パ
ターン６を覆いアルミナコートを形成する。これは，接
着剤との接合を強化するために行われる。次いで，段差
側面に樹脂系接着剤１０を塗布し，キャップ８とステム
１とを嵌合する。このとき，余分な接着剤は，キャップ
８の段差８ｂ先端面とステム１の段差面とに形成された
隙間に流れ込む。従って，余分な接着剤は容器の内部に
はみ出し，外周部のキャップ８とステム１の当接する端
面には流入しないから，当接面の密着性が害されること
はなく，キャップ外面のメタライズ層のソース電極への
電気的接続が確実になされる。なお，電気的接続を完全
にするためにメタライズ層９と導電パターン６が接触す
るコーナに導電体，例えば導電塗料を塗布することも容
易にできる。The step 8 is adhered to the cap 8 and the stem 1.
b, 1c on opposite sides. First, when the conductive pattern 6 is formed on the surface to be the adhesive surface, an alumina coat is formed to cover the conductive pattern 6. This is done to enhance the bond with the adhesive. Next, the resin adhesive 10 is applied to the side surface of the step, and the cap 8 and the stem 1 are fitted together. At this time, the excess adhesive flows into the gap formed between the tip surface of the step 8b of the cap 8 and the step surface of the stem 1. Therefore, the excess adhesive does not flow into the inside of the container and does not flow into the end surface where the cap 8 and the stem 1 in the outer peripheral portion contact, so that the adhesion of the contact surface is not impaired, and the metallization layer on the outer surface of the cap does not deteriorate. The electrical connection to the source electrode is ensured. It is also possible to easily apply a conductor, for example, a conductive paint, to a corner where the metallized layer 9 and the conductive pattern 6 are in contact with each other in order to complete electrical connection.
【００３５】本発明の第二実施例は，図２（ｂ）を参照
して，第一実施例のメタライズ層９をキャップ８の段差
面にまで延在したものである。この実施例では，平面に
よりステム１表面の導電パターン６と接触するから，よ
り確実な電気的接続が可能となる。In the second embodiment of the present invention, referring to FIG. 2B, the metallized layer 9 of the first embodiment is extended to the step surface of the cap 8. In this embodiment, since the flat surface contacts the conductive pattern 6 on the surface of the stem 1, more reliable electrical connection is possible.
【００３６】本発明の第三実施例は，図２（ｃ）を参照
して，第一実施例において段差１ｃの内側角をテーパ面
にしたものである。キャップ８とステム１とは，このテ
ーパ面で当接する。かかるテーパはキャップ８とステム
１の位置関係を精密に保持することができるので，接着
が確実になる。また接触面積が大きく良好な接続とする
ことができる。In the third embodiment of the present invention, referring to FIG. 2 (c), the inner corner of the step 1c is tapered in the first embodiment. The cap 8 and the stem 1 abut on this tapered surface. Since such a taper can maintain the positional relationship between the cap 8 and the stem 1 with precision, the adhesion is ensured. In addition, the contact area is large and good connection can be achieved.
【００３７】本発明の第四実施例は，図２（ｄ）を参照
して，キャップ８の内側を切り欠いた形状の段差８ｂ
と，ステム１の外周を切り欠いた形状の段差１ｃとを嵌
合し，接着するものである。In the fourth embodiment of the present invention, referring to FIG. 2D, a step 8b having a shape in which the inside of the cap 8 is cut out is formed.
And the step 1c having a shape in which the outer periphery of the stem 1 is cut out are fitted and adhered.
【００３８】本実施例例では，キャップ８の段差８ｂが
ステム１の段差１ｃよりも大きいため，キャップ８の外
周下端面がステム１周辺上端に形成された段差面に当接
する。従って，キャップ８外周から段差８ｂ先端面上延
在して形成されたメタライズ層９は，ステム１の段差面
上に形成された導電パターン６に当接し，電気的に接続
される。In this embodiment, since the step 8b of the cap 8 is larger than the step 1c of the stem 1, the outer peripheral lower end surface of the cap 8 contacts the step surface formed on the upper end of the periphery of the stem 1. Therefore, the metallized layer 9 formed so as to extend from the outer periphery of the cap 8 onto the tip surface of the step 8b contacts the electrically conductive pattern 6 formed on the step surface of the stem 1 and is electrically connected thereto.
【００３９】本実施例は，アルミナコート６及び接着面
が外部から容易に観察できるため，製作が容易である。In the present embodiment, the alumina coat 6 and the adhesive surface can be easily observed from the outside, so that the manufacture is easy.
【００４０】[0040]
【発明の効果】本発明によれば，キャップ表面のメタラ
イズ層を接着層を介在させることなく直接ステム表面に
当接できるので，キャップ表面のメタライズ層の接地を
容易にとることができる半導体装置用容器を提供できる
ので，半導体装置の性能向上に寄与するところが大き
い。According to the present invention, the metallized layer on the cap surface can be directly contacted with the stem surface without the interposition of the adhesive layer. Therefore, the metallized layer on the cap surface can be easily grounded. Since the container can be provided, it greatly contributes to the performance improvement of the semiconductor device.
【図１】 本発明の実施例断面図FIG. 1 is a sectional view of an embodiment of the present invention.
【図２】 本発明の実施例一部拡大断面図FIG. 2 is a partially enlarged sectional view of an embodiment of the present invention.
【図３】 従来例ステム平面図FIG. 3 is a plan view of a conventional stem
【図４】 従来例ステムＡＡ’断面図FIG. 4 is a sectional view of a conventional stem AA ′.
【図５】 従来例容器断面図FIG. 5 is a sectional view of a conventional container
１ ステム １ａ ヘッダー部 １ｂ 封止部 １ｃ 段差 ２ ゲート引出し線 ３ ドレイン引出し線 ４ ソース引出し線 ６ 導電パターン ７ ボンデングワイヤ ８ キャップ ９ メタライズ層 １０ 接着剤 １１ アルミナコート １２ テーパ面 1 Stem 1a Header part 1b Sealing part 1c Step 2 Gate leader line 3 Drain leader line 4 Source leader line 6 Conductive pattern 7 Bonding wire 8 Cap 9 Metallized layer 10 Adhesive agent 11 Alumina coat 12 Tapered surface
Claims (2)
ッダー部（１ａ）が設けられ，該上面に該ヘッダー部
（１ａ）を囲む封止部（１ｂ）が設けられた第一の絶縁
体からなるステム（１）と，少なくとも表面の一部にメ
タライズ層（９）が設けられた第二の絶縁体からなる蓋
状のキャップ（８）であって，キャップ口縁（８ａ）を
絶縁性接着剤（１０）により該封止部（１ｂ）に接着し
て該チップ（５）を封止する該キャップ（８）とを有す
る半導体装置用容器において， 該封止部（１ｂ）に，該キャップ口縁（８ａ）に設けら
れた第一の段差（８ｂ）と嵌合し，かつ該キャップ
（８）表面の該メタライズ層（９）と該ステム（１）と
が当接するように形成された第二の段差（１ｃ）が設け
られ， 該第一及び第二の段差（８ｂ，１ｃ）の対向する側面を
該キャップ８と該ステム１との接着面とすることを特徴
とする半導体装置用容器。1. A first insulator having a header portion (1a) for mounting a semiconductor chip (5) on an upper surface and a sealing portion (1b) surrounding the header portion (1a) on the upper surface. A lid-shaped cap (8) comprising a stem (1) made of a metal and a second insulator having a metallized layer (9) provided on at least a part of its surface, and insulating the cap rim (8a). In a container for a semiconductor device having the cap (8) that adheres to the sealing portion (1b) with an adhesive (10) to seal the chip (5), the sealing portion (1b) is It is formed so as to fit with the first step (8b) provided on the cap rim (8a), and so that the metallized layer (9) on the surface of the cap (8) and the stem (1) come into contact with each other. A second step (1c) is provided, and a pair of the first and second steps (8b, 1c) is provided. Container for semiconductor devices, wherein a side of the bonding surface between the cap 8 and the stem 1.
て， 該封止部（１ｂ）及び該キャップ口縁（８ａ）に形成さ
れた段差（１ｃ，８ｂ）のうち該メタライズ層（９）と
該ステム（１）とが当接する面をテーパ面（１２）とす
ることを特徴とする半導体装置用容器。2. The container for a semiconductor device according to claim 1, wherein the metallization layer (9) among the steps (1c, 8b) formed in the sealing portion (1b) and the cap rim (8a). A container for a semiconductor device, characterized in that a surface in contact with the stem (1) is a tapered surface (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5149647A JPH0714936A (en) | 1993-06-22 | 1993-06-22 | Vessel for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5149647A JPH0714936A (en) | 1993-06-22 | 1993-06-22 | Vessel for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0714936A true JPH0714936A (en) | 1995-01-17 |
Family
ID=15479802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5149647A Withdrawn JPH0714936A (en) | 1993-06-22 | 1993-06-22 | Vessel for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714936A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002334944A (en) * | 2001-05-08 | 2002-11-22 | Nec Corp | Hollow structure package |
| KR100411206B1 (en) * | 2001-02-19 | 2003-12-18 | 삼성전자주식회사 | Semiconductor package |
| JP2017059814A (en) * | 2015-09-16 | 2017-03-23 | 京セラ株式会社 | Electronic component storage package and electronic apparatus |
-
1993
- 1993-06-22 JP JP5149647A patent/JPH0714936A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100411206B1 (en) * | 2001-02-19 | 2003-12-18 | 삼성전자주식회사 | Semiconductor package |
| JP2002334944A (en) * | 2001-05-08 | 2002-11-22 | Nec Corp | Hollow structure package |
| JP2017059814A (en) * | 2015-09-16 | 2017-03-23 | 京セラ株式会社 | Electronic component storage package and electronic apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20000905 |