JPH07147393A - Semiconductor device and its manufacturing method and device - Google Patents

Abstract

PURPOSE:To increase the adhesion strength between a semiconductor substrate and a passivation film and then prevent release by increasing the adhesion strength between the semiconductor substrate and a first passivation material as compared with that between the first passivation material and a second passivation material. CONSTITUTION:After a peripheral edge part including a bevel region 1a of a semiconductor substrate 1 is irradiated with ultraviolet ray, it is coated with resin which becomes a first passivation film 2. Then, the bevel region 1a of the semiconductor substrate 1 is adhered to a resin frame 3 consisting of the second passivation material. At this time, the adhesion strength between the semiconductor substrate 1 and the film 2 of the first passivation material is increased to be larger than that between the film 2 of the first passivation material and the resin frame 3 consisting of the second passivation material, thus improving the wetting property of resin for passivation and adhesion strength.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a power thyristor, G
Semiconductor device having a bevel region at the peripheral portion of a semiconductor substrate, such as a TO thyristor and a diode, and a method for manufacturing the same, particularly a method for coating the bevel region with a resin, and a manufacturing device for carrying out this method, particularly a device used for resin coating Regarding

[0002]

2. Description of the Related Art A semiconductor substrate such as a large-capacity thyristor or GTO thyristor is housed in a container, and the terminals exposed on both sides of the container are connected by pressure contact to radiate heat equally from both sides of the container. Flat semiconductor devices are well known. In this case, it is well known that the semiconductor substrate is brazed to a support plate made of molybdenum, tungsten, or the like for easy handling. However, since the bending occurs due to the difference in the thermal expansion coefficient during the brazing, a non-alloy (alloy-free) flat semiconductor device that is not brazed to the support plate has been manufactured in order to avoid the bending. .

FIG. 8 shows the structure of a power semiconductor element (pressure contact type flat package). In the figure, 1 is a semiconductor substrate, 55 and 56 are intermediate electrode plates which are superposed in an alloy-free manner on the main surface with the semiconductor substrate 1 sandwiched therebetween, 50 is a flat package incorporating the above elements, and the package 50 is a ceramic. It is made up of an insulating side wall 57, a cathode also serving as a radiator connected to the side wall 57 via flanges 53 and 54, and anode terminal electrodes 51 and 52.

Here, in order to secure a predetermined breakdown voltage between the main surfaces of the semiconductor substrate 1, the peripheral portion of the substrate is passivated. The passivation treatment is performed for the purpose of protecting the surface of the semiconductor substrate having a withstand voltage from the environment that adversely affects water and other adverse effects and preventing the surface discharge. Therefore, the passivation film 2 can be easily formed and the An insulating coating film of, for example, a silicone resin, which has good adhesion to the surface and is stable and does not peel or change is generally used.

The passivation process is performed in the following procedure. The peripheral portion of the semiconductor substrate 1 is ground by mechanical grinding, and the bevel region 1a is inclined like an umbrella with respect to the pn junction.
To form. Subsequently, the work strain layer is removed by acid etching. Next, the bevel region 1a is covered with the front and back surfaces of the substrate 1
A thin film of a silicone resin is coated as a passivation film 2 on the peripheral portion of the. As a resin coating method in this case, conventionally, a roller as a coating jig is applied to the peripheral portion of the semiconductor substrate 1 and liquid resin is supplied to the roller while rotating the substrate itself to coat the resin. Alternatively, a method is known in which a brush-shaped application jig is used instead of the roller to apply the resin. After these resins are cured in a high temperature furnace, the thick resin frame 3 formed by the injection molding method of silicone rubber is further fitted to the peripheral portion of the substrate. The purpose of the resin frame 3 is to compensate for the fact that the underlying silicone resin does not provide a sufficient thickness, and to position and fix the semiconductor substrate 1 inside the package 50.

[0006]

However, in the alloy-free power semiconductor device, reliability problems such as deterioration of breakdown voltage and instability due to peeling of the passivation film may occur. The following three points can be considered as the causes. (1) Contamination of the semiconductor substrate surface before applying the passivation resin (2) Contamination or damage during application of the passivation resin (3) Improper selection of the first passivation material and the second passivation material Will be explained in a little more detail.

First, regarding the contamination of the surface of the semiconductor substrate, in the past, in applying the resin to be the passivation material, after acid etching for removing the processing strained layer was performed,
The peripheral portion of the semiconductor substrate was washed with pure water, heated and dried, and then applied. It was thought that this acid etching and washing with water would remove the processed strained layer on the beveled surface and also remove the surface stain. However, stains on the semiconductor substrate, particularly stains of organic substances, were not removed by acid etching and subsequent washing with water. Therefore, the adhesiveness of the applied resin becomes insufficient.

Further, as in the conventional method, in which a jig such as a roller or a brush is applied to the peripheral edge of the semiconductor substrate to coat the resin while rotating the substrate, stains resulting from them may adhere. There is a possibility that the semiconductor substrate 1 may be damaged by the pressing force applied from the jig side to the peripheral portion of the beveled substrate having a wedge-shaped cross section. In addition, if this resin coating is applied to the semiconductor substrate 1 separately on each side, the semiconductor substrate 1 has to be turned over during the coating process, which complicates the process, and also when first turning the substrate 1 over. There was also a problem such as scratching the surface of the uncured resin applied to.

Further, when an unpredictable force is applied to the semiconductor substrate 1 and the resin frame 3 made of the second fixing passivation material inside the package 50, the adhesive strength between the passivation film 2 and the resin frame 3 becomes semiconductor. Board 1
Is stronger than the adhesive strength between the passivation film 2 and
Peeling occurred between the semiconductor substrate 1 and the passivation film 2, and a crack reached from the surface of the substrate 1 to the surface of the resin frame 3 to cause a problem such as deterioration of the element breakdown voltage.

An object of the present invention is to solve the above-mentioned problems, to increase the adhesive strength between the semiconductor substrate 1 and the passivation film 2, and to prevent peeling between them, which is a highly reliable semiconductor device. Another object of the present invention is to provide a manufacturing method and a manufacturing apparatus for obtaining such a semiconductor device.

[0011]

In order to achieve the above object, the present invention provides a semiconductor substrate whose peripheral portion is covered with a film made of a first passivation material so that the semiconductor substrate is exposed on the insulating side wall and both surfaces. A semiconductor device, which is housed in a container having terminal electrodes, adheres to a film made of a first passivation material, and has a resin frame (positioning member) adjacent to a side wall of the container made of a second passivation material, wherein The adhesive strength between the first passivation material and the second passivation material is greater than the adhesive strength between the first passivation material and the second passivation material. It is effective that the film covering the semiconductor substrate is formed by coating and the resin frame is formed by casting. It is preferable that the first passivation material is a polyimide resin and the second passivation material is a silicone resin.

As a method of manufacturing such a semiconductor device,
After irradiating the peripheral portion including the bevel region of the semiconductor substrate with ultraviolet rays, the resin serving as the first passivation material is coated. In particular, in recent years, many semiconductor elements for electric power use have a large diameter and the diameter of a semiconductor substrate exceeds 100 mm. In order to irradiate such a large-diameter substrate with ultraviolet rays, it is preferable to irradiate the peripheral portion while rotating the substrate.

In the first method of coating the passivation material, the semiconductor substrate is mounted on a rotary table and rotated. In this state, liquid resin is dripped from above onto the upper surface of the peripheral portion of the substrate, and onto the lower surface. The liquid resin is applied by directly contacting it from below, and then hot air is blown onto the resin application surface to dry it. Here, in drying the resin-coated surface, it is preferable to blow warm air to the semiconductor substrate from the inner peripheral side of the resin coated surface toward the outer peripheral direction.

Further, in order to obtain a passivation film having a sufficient thickness, there is a method in which the resin coating step and the drying step described above are repeatedly performed to overcoat the semiconductor substrate with the resin. On the other hand, the manufacturing apparatus of the present invention used for ultraviolet irradiation of the above method includes a rotary table on which a semiconductor substrate is mounted, and a lens and a mirror that are arranged on the upper and lower sides of the rotary substrate so as to face the peripheral edge of the semiconductor substrate. And a high pressure mercury lamp as a light source that emits ultraviolet rays.

Further, the manufacturing apparatus of the present invention used for applying a passivation material includes a rotary table on which a semiconductor substrate is mounted,
Dispenser for supplying resin and hot air blowing nozzle, which is arranged on the upper surface side facing the bevel area of the semiconductor substrate mounted on the rotating table, and resin overflow supply nozzle and warm air blowing, which are closely arranged on the lower surface side. It is configured to include a nozzle.

Further, at a position different from the position where the ultraviolet irradiation mechanism is provided on the circumference of the rotating semiconductor substrate of the manufacturing apparatus used for the ultraviolet irradiation, a coating mechanism and a drying mechanism of a resin as a passivation material. Can also be provided.

[0017]

The bonding strength between the semiconductor substrate and the first passivation material is increased, and the bonding strength is made larger than the bonding strength between the first passivation material and the second passivation material, so that the semiconductor substrate and the first passivation material are bonded together. When an unexpected force is applied to the resin frame made of the second passivation material, peeling occurs at the interface between the film and the resin frame rather than at the interface between the substrate and the film made of the first passivation material, and cracks occur. Since it reaches the surface from the interface, the film of the first passivation material remains intact, and the reliability of the element such as breakdown voltage is guaranteed.

By irradiating the coating portion on the surface of the semiconductor substrate with ultraviolet rays by the above method, the resin serving as the passivation material is coated to remove the contamination of the substrate surface, which is mainly composed of organic substances, and clean the surface of the semiconductor substrate. The resin will be applied. As a result, the wettability of the resin liquid on the surface of the semiconductor substrate at the time of application is improved, and the adhesive strength between the passivation film and the surface of the semiconductor substrate is improved.

By irradiating ultraviolet rays while rotating the semiconductor substrate using an optical system having a function of condensing ultraviolet rays, the irradiation intensity of ultraviolet rays can be increased even in a large-diameter semiconductor substrate, so that the effect of removing contaminants is enhanced. To be Also,
According to the above resin coating method, the coating jigs such as the dispenser and the nozzle are installed at positions apart from each other in a non-contact state with respect to the semiconductor substrate, and therefore, unlike conventional rollers and brushes. There is no risk of soiling the semiconductor substrate or damaging it by hitting the semiconductor substrate, and the resin is simultaneously applied to both the front and back surfaces of the bevel region. Moreover, liquid resin is simultaneously supplied from above and below to the peripheral edge of the beveled semiconductor substrate, and the resin adhering to the substrate surface spreads to the outer peripheral edge due to the centrifugal force action due to the rotation of the substrate, and the bevel region is expanded. It is applied so as to cover a uniform thickness.

When hot air is blown toward the resin-coated surface, the solvent of the resin evaporates and is dried to a certain degree. Further, at this time, by blowing warm air toward the resin-coated surface from the inner peripheral side of the substrate toward the outer peripheral direction, it is possible to dry the resin in a fluid state while pushing it into the bevel region of the substrate. convenient. When the required thickness cannot be obtained by one-time application, the passivation film having a desired thickness can be obtained by repeatedly applying the resin application step and the drying step described above several times. .

If the ultraviolet irradiation mechanism, the coating mechanism for coating the resin as the passivation material, and the drying mechanism are on the same circumference of the rotating semiconductor substrate, the resin can be coated immediately after the irradiation of the ultraviolet rays to prevent contamination. Opportunity can be reduced.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a passivation film 2 made of a first passivation material for covering a bevel region 1a on a silicon substrate 1 which constitutes a thyristor according to an embodiment of the present invention.
FIG. 3 is a partial cross-sectional view showing a state in which a resin frame 3 made of a second passivation material is formed thereon. Hereinafter, the manufacturing steps up to the shape of FIG. 1 will be described step by step with reference to the drawings in accordance with the flow of FIG.

After the steps such as diffusion and patterning of the silicon substrate 1 are completed, the end portion is ground by a grindstone to about 6
The beveling process is performed at 0 °, and the etching process for removing the damaged layer is performed. The steps up to here follow the conventional steps. FIG. 3 is a sectional view showing the outline of the configuration of an example of a manufacturing apparatus for irradiating a disk-shaped semiconductor substrate with ultraviolet rays in the manufacturing method of the present invention. In the figure, reference numeral 11 denotes a turntable that vacuum-sucks and rotates the semiconductor substrate 1, and the semiconductor substrate 1 is mounted on the turntable 11 with the bevel surface 1a facing downward. An optical system mainly including a mirror 12 and a lens 13 is provided on the upper and lower surfaces of the semiconductor substrate 1 so as to face the peripheral edge 1b of the semiconductor substrate 1, and ultraviolet rays 15 emitted from a high-pressure mercury lamp 14 are emitted from the semiconductor substrate. The upper and lower surfaces of the peripheral edge portion 1b of 1 are irradiated.

The semiconductor substrate 1 is irradiated with ultraviolet rays before the application of the resin as the first passivation material using the above apparatus. The semiconductor substrate 1 carried into this processing step is in a state where the bevel processing and the etching have been completed as described above. However, in this state, the surface of the semiconductor substrate 1 that has been acid-etched is often contaminated mainly with organic substances.

The semiconductor substrate 1 carried into the ultraviolet irradiation process
First, it is mounted on a fixed position on the rotary table 11 with its center aligned and held by suction, and then the rotary table 11 is driven and rotated by a motor (not shown). Next, in this state, the ultraviolet rays emitted from the high-pressure mercury lamp 14 are reflected by the mirror 12 and the lens 13 arranged above and below the semiconductor substrate 1,
The light is focused and irradiated on the upper and lower surfaces of the peripheral edge portion 1b including the bevel region 1a of the semiconductor substrate 1. In this example, irradiation was performed for 15 minutes using a 500 watt high-pressure mercury lamp.

When a polyimide resin was applied to the peripheral portion 1b including the bevel region 1a of the semiconductor substrate 1 irradiated with ultraviolet rays by the apparatus of FIG. 3 immediately after the irradiation, the wettability to the surface of the semiconductor substrate 1 was very good. Same as usual curing process after polyimide resin coating after fully dried, 3
After curing at 50 ° C. for 1 hour, the adhesive strength was measured with an adhesive strength tester described later. The adhesive strength between the semiconductor substrate 1 and the passivation film 2 is improved by about 10% as compared with the case where only normal cleaning is performed.

As described above, the wettability of the resin liquid with respect to the surface of the semiconductor substrate is improved and the passivation film 2 is formed.
It is considered that the reason why the adhesive strength between the semiconductor substrate 1 and the surface of the semiconductor substrate 1 is improved is that the contamination of the surface of the substrate 1 is removed by the irradiation of ultraviolet rays. Although the mechanism of decontamination by ultraviolet irradiation is not clarified exactly, it is considered that the pollutants are oxidized and removed by the oxidizing action of ozone generated by ultraviolet rays.

In the apparatus shown in FIG. 3, ultraviolet rays 15 from the high-pressure mercury lamp 14 are condensed on a small area by using an optical system such as a lens 13, and the semiconductor substrate 1 is rotated while the peripheral edge of the semiconductor substrate 1 is required. By irradiating only a part, the irradiation intensity is increased and the irradiation intensity is made uniform,
Although the irradiation device is made compact, it is needless to say that the irradiation light may be moved or the entire surface may be irradiated by devising the optical system.

As described above, the peripheral edge of the beveled semiconductor substrate can be cleaned extremely effectively against contamination which was insufficient by the conventional cleaning method, and the wettability of the passivation resin, Adhesive strength is improved and resin peeling is eliminated. FIG. 4 is a sectional view showing the configuration of the main part of a resin coating apparatus used for resin coating in the manufacturing method of the present invention. In the figure, reference numeral 21 denotes a rotary table that rotates by sucking a disk-shaped semiconductor substrate 1 by vacuum suction, and faces a peripheral edge portion 1b of the semiconductor substrate 1 mounted on the rotary table 21 with a bevel surface 1a facing downward. Then, on the upper surface side, a resin dispenser 22 that supplies the liquid resin (polyimide resin) by dripping from above toward the substrate, and on the lower surface side, the nozzle tip is brought close to the surface of the substrate 1 and the liquid resin is directed upward. A resin supply nozzle 24 for overflowing is provided. Further, a pair of upper and lower hot air blowing nozzles 26 are provided at different positions so as to face the peripheral edge 1b of the semiconductor substrate 1. Here, the hot air blowing nozzle 26 is arranged so as to blow hot air (nitrogen gas at a temperature of 90 to 100 ° C.) from the inner peripheral side toward the outer peripheral direction of the peripheral edge of the substrate 1. . Reference numeral 25 is a cup that surrounds the rotating table 21 and prevents the resin from scattering around.

Next, a method of coating a resin using the above apparatus will be described. The semiconductor substrate 1 carried into the resin coating process is first mounted on a rotary table 21 at a fixed position with its center aligned and held by suction, and then the rotary table 21 is rotated by a drive motor (not shown). Next, in this state, a liquid polyimide resin 23 is dispensed from the resin dispenser 22 arranged above the semiconductor substrate 1 toward the substrate by 2-3 cc at a time. The dropping position of the resin is set within the range of the bevel region 1a, which is about 5 mm inside the peripheral edge of the substrate 1. On the other hand, with respect to the lower surface side of the substrate 1, a liquid polyimide resin (viscosity 100 cp) continuously overflows from the resin supply nozzle 24 arranged on the lower side, and polyimide swelled from the nozzle end surface as shown by surface tension. The resin 23 is brought into direct contact with the surface of the substrate 1. As a result, the polyimide resin 23 is attached to both the front and back surfaces of the semiconductor substrate 1, and the resin spread to the outer peripheral side of the substrate 1 is connected at the peripheral edge of the substrate due to the centrifugal force of high-speed rotation, and the upper and lower surfaces of the bevel region 1a are connected. It will be lined up and covered with a uniform thickness.

Subsequently, after stopping the supply of the resin, the rotary table 21 is rotated while the upper and lower hot air blowing nozzles 26 are blown.
The nitrogen gas 27 heated to 90 to 100 ° C. is blown onto the resin-coated surface of the substrate for several minutes. As a result, the solvent contained in the resin is evaporated and solidified to some extent. In this case, the hot air is blown from the inner circumferential side toward the outer circumferential direction on the resin application surface, so that the resin is hardened in a state of being pushed to the bevel end portion.

As described above, the above method simultaneously and evenly coats the resin on the front and back surfaces of the peripheral portion of the beveled semiconductor substrate without fear of contaminating or damaging the substrate. be able to. Further, it is a resin coating method having a high throughput as well as an improvement in yield, such that the substrate can be conveyed to the next process without any trouble without the resin flowing down from the substrate.

When the drying step is completed, the semiconductor substrate 1 is discharged from the top of the rotary table 21 by a robot handling operation and transferred to a curing furnace, where the heating temperature is 350 ° C. and the polyimide is heated for 1 hour. Cure the resin. As a result, the passivation film 2 (see FIG. 1) is deposited on the surface of the bevel region 1a of the semiconductor substrate 1 as passivation.

The film thickness of the passivation film 2 coated on the bevel region 1a of the semiconductor substrate 1 can be adjusted by the rotation speed of the turntable 21, the viscosity of the resin, the dropping amount, and the like. The conditions may be set in consideration of the withstand voltage and the like. FIG. 5 is a cross-sectional view showing the outline of the configuration of another example of the apparatus used for ultraviolet irradiation in the manufacturing method of the present invention, which is opposed to the peripheral portion of the rotating semiconductor substrate 1 and has the ultraviolet irradiation mechanism 10. A resin supply nozzle 16 for supplying and applying liquid resin (polyimide resin) to the peripheral portion of the semiconductor substrate is provided at a position different from that, so that resin coating can be performed immediately after ultraviolet irradiation. Since the resin coating can be performed immediately after the irradiation of ultraviolet rays, the chance of contamination is reduced, and as a result, the effect of removing contamination is further enhanced.

The substrate 1 on which the polyimide resin film 2 has been formed by the apparatus shown in FIG. 4 or 5 is placed in the mold 31 in the resin frame forming apparatus obtained by casting the second passivation member shown in the sectional view of FIG. To fix. An injection pipe 32 and an exhaust pipe 33 are connected to the mold 31, and the inside of the mold 31 is evacuated by a vacuum pump 34 with the injection pipe 32 closed. Then, the injection pipe 32 is opened, and the inside of the mold 31 is filled with the silicone resin 35. Then, the mold 31 is placed in a baking oven, baked at 150 ° C. for 1 hour, and then the substrate 1 is taken out from the mold 31.

Here, an important point is that the passivation film 2
The selection is made of the polyimide resin 23 which is the forming material of the above and the silicone resin 35 which is the forming material of the resin frame 3 which covers the polyimide resin 23. The respective adhesive strengths are evaluated by the following methods using a jig whose outline is shown in the sectional view of FIG. Reference numeral 41 denotes a silicon substrate that has been subjected to the same surface treatment as that of the actual element, and the polyimide resin 23 is formed thereon so as to be sandwiched between silicon blocks 42. After that, a force 43 is applied from the direction of the arrow with a spring gauge to measure the peeling strength of the silicon block 42. The adhesive strength between the polyimide resin 23 and the silicone resin 35 is also measured by the same method.
The adhesive strength between the polyimide resin 23 and the silicon substrate 1 used in the above embodiment is 5.0 kgf, and the adhesive strength between the polyimide resin 23 and the silicone resin 35 is
It is 1.5 kgf. The former has stronger adhesion than the latter. These adhesive strengths need to be measured each time, because even if the combination of resins is the same, it changes when the manufacturer of the resin changes.

According to the present invention, when the passivation material is doubly provided so as to cover the semiconductor substrate, the adhesive strength between the substrate and the passivation material on the substrate is greater than the adhesive strength between the two passivation materials. By selecting the passivation material as described above, even if a large force acts on the passivation material, cracks are generated outward from the interface between the two passivation materials, so that the bevel portion at the outer peripheral portion of the substrate is not cracked. As a result, the breakdown voltage does not deteriorate, and a highly reliable semiconductor device can be obtained.

Through these steps, the silicon substrate 1 on which the polyimide resin passivation film 2 and the silicone resin resin frame 3 are formed as shown in FIG. 1 is incorporated into a package 50 whose sectional view is shown in FIG. And
Assemble in the following procedure. Ceramic side wall 57
And the anode terminal electrode 51 are joined together by a flange 53.
The intermediate electrode plate 55 is placed on the above, the above-mentioned silicon substrate 1 is put, and the intermediate electrode plate 56 is further placed thereon, and the cathode terminal electrode 52 and the side wall 57 are joined by the flange 54 and sealed. To do. Although not shown, the connection structure to the gate electrode is formed separately.

Immediately after the irradiation, polyimide resin was applied to the peripheral portion 1b including the bevel region 1a of the semiconductor substrate 1 which was irradiated with ultraviolet rays by the apparatus shown in FIG. 5, and further a silicone resin was applied thereto, and the flat package was assembled into an ordinary flat package. The semiconductor element showed good reliability without peeling of the passivation film 2.

[0040]

As described above, according to the method and apparatus of the present invention, the peripheral portion of the beveled semiconductor substrate is extremely effective against contamination which was insufficient by the conventional cleaning method. Cleaning is possible, and the wettability and adhesive strength of the passivation resin are improved. Further, with respect to the peripheral portion of the beveled semiconductor substrate, the resin can be simultaneously coated on both front and back surfaces without fear of contaminating or damaging the surface of the semiconductor substrate.

Then, the passivation material is selected so that the adhesion strength between the substrate and the passivation material on the substrate is higher than the adhesion strength between the two passivation materials by the coating method of the passivation film having the increased adhesion strength. Even when a large force is applied to the passivation material, cracks are generated outward from the interface between the two passivation materials, so that the bevel portion at the outer peripheral portion of the substrate is not cracked. As a result, the breakdown voltage does not deteriorate,
A highly reliable semiconductor device can be obtained.

Further, in this method, after the resin is applied, the resin is dried with warm air while the substrate is still mounted on the turntable, so that the substrate can be conveyed to the next step without flowing down from the substrate. This is a manufacturing method with high throughput combined with improved yield, which can be performed without any problems.

[Brief description of drawings]

FIG. 1 is a sectional view of a peripheral portion of a thyristor semiconductor element body according to an embodiment of the present invention.

FIG. 2 is a diagram showing a flow of a method for manufacturing a semiconductor device of the present invention.

FIG. 3 is a configuration diagram of an ultraviolet irradiation device used in the method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a cross-sectional view of a coating apparatus used for forming a passivation film used in the method for manufacturing a semiconductor device of the present invention.

FIG. 5 is a configuration diagram of another ultraviolet irradiation device used in the method for manufacturing a semiconductor device of the present invention.

FIG. 6 is a sectional view of a thyristor according to an embodiment of the present invention during a resin frame manufacturing process.

FIG. 7 is a cross-sectional view during a resin adhesive strength measuring step.

FIG. 8 is a sectional view of the power semiconductor device after assembly.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 1a Bevel area 1b Peripheral part 2 Passivation film 3 Resin frame 10 Ultraviolet irradiation mechanism 11 Rotation table 12 Mirror 13 Lens 14 High pressure mercury lamp 15 Ultraviolet 16 Resin supply nozzle 21 Rotation table 22 Resin dispenser 23 Polyimide resin 24 Resin supply nozzle 25 Cup 26 Warm air blowing nozzle 27 Nitrogen gas 31 Mold 32 Injection pipe 33 Exhaust pipe 34 Vacuum pump 35 Silicone resin 41 Silicon substrate 42 Silicon block 43 Force 50 Package 51 Anode terminal electrode 52 Cathode terminal electrode 53 Flange 54 Flange 55 Intermediate electrode plate 56 Intermediate Electrode Plate 57 Ceramic Side Wall

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location H01L 23/29 23/31

Claims (11)

[Claims] 1. A semiconductor substrate, the peripheral portion of which is covered with a film made of a first passivation material, is housed in a container having insulating side walls and conductive terminal electrodes exposed on both surfaces, and made of a first passivation material. In the case where the positioning member that is adhered to the film and is close to the container side wall is made of the second passivation material, the adhesive strength between the semiconductor substrate and the first passivation material is the same as that of the first passivation material and the second passivation material. A semiconductor device characterized by being made stronger than the adhesive strength. 2. The semiconductor device according to claim 1, wherein a film covering the peripheral portion of the semiconductor substrate is formed by coating, and the positioning member is formed by casting. 3. The semiconductor device according to claim 1, wherein the first passivation material is a polyimide resin and the second passivation material is a silicone resin. 4. The method for manufacturing a semiconductor device according to claim 1, wherein a film of the first passivation material is formed after irradiating the peripheral portion of the semiconductor substrate with ultraviolet rays. Manufacturing method of semiconductor device. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the semiconductor substrate is mounted on a turntable, and the peripheral portion of the semiconductor substrate is irradiated with ultraviolet rays while the substrate is rotated. 6. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is mounted on a turntable and rotated, and in this state, the upper surface of the peripheral portion of the substrate is passivated from above. The liquid resin to be used as the material is dropped, and the same liquid resin is applied by directly contacting the lower surface from below, and then hot air is blown onto the resin-coated surface of the substrate to dry it and the film of the first passivation material is applied. A method of manufacturing a semiconductor device, comprising: 7. The method of manufacturing a semiconductor device according to claim 6, wherein hot air is blown toward the semiconductor substrate from the inner peripheral side of the resin coated surface toward the outer peripheral direction. 8. The method for manufacturing a semiconductor device according to claim 6, wherein the resin coating step and the drying step are repeatedly performed to coat the resin on the semiconductor substrate again. 9. A rotary table on which a semiconductor substrate is mounted, an optical system for irradiating ultraviolet rays, which is provided on the upper surface side and the lower surface side of the semiconductor substrate mounted on the rotary table so as to face the peripheral portion of the semiconductor substrate, and an ultraviolet source. An apparatus for manufacturing a semiconductor device used in the method according to claim 5, further comprising: 10. A turntable on which a semiconductor substrate is mounted, a dispenser for supplying and dropping resin and a hot air blowing nozzle disposed on the upper surface of the turntable which faces the peripheral portion of the semiconductor substrate mounted on the turntable, and the lower surface. 9. The semiconductor device manufacturing apparatus used in the method according to claim 6, further comprising a resin overflow supply nozzle and a hot air blowing nozzle which are disposed close to each other. 11. The apparatus for manufacturing a semiconductor device according to claim 9, further comprising a mechanism for supplying a resin as a passivation material so as to face a peripheral portion of the rotating semiconductor substrate.