JPH07147128A - Cold cathode electron element - Google Patents
Cold cathode electron elementInfo
- Publication number
- JPH07147128A JPH07147128A JP29335793A JP29335793A JPH07147128A JP H07147128 A JPH07147128 A JP H07147128A JP 29335793 A JP29335793 A JP 29335793A JP 29335793 A JP29335793 A JP 29335793A JP H07147128 A JPH07147128 A JP H07147128A
- Authority
- JP
- Japan
- Prior art keywords
- cold cathode
- electron source
- source element
- substrate
- fine particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、冷陰極電子源素子に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cold cathode electron source device.
【０００２】[0002]
【従来の技術】電界放射型電子源は、半導体の微細加工
技術を利用してミクロンサイズに製造でき、しかも集積
化やバッチ加工が容易であるため、熱電子放射型電子源
では不可能であったＧＨｚ帯増幅器や大電力・高速スイ
ッチング素子、更には高精細度フラットパネルディスプ
レイ用電子源への応用が期待されており、国内外におい
て盛んに研究開発がなされている。2. Description of the Related Art A field emission type electron source cannot be manufactured with a thermionic emission type electron source because it can be manufactured to a micron size by utilizing a semiconductor fine processing technique and is easily integrated and batch processed. It is expected to be applied to GHz band amplifiers, high-power / high-speed switching elements, and electron sources for high-definition flat panel displays, and research and development are being actively conducted in Japan and overseas.
【０００３】このような電界放射型電子源の従来例を以
下に説明する。A conventional example of such a field emission electron source will be described below.
【０００４】図９に示す薄膜電界放射型の電子源は、冷
陰極５２と対向するゲート電極５３とを０．３乃至２μ
ｍの間隔をあけて絶縁体基板５１上に成膜し、真空中で
前記冷陰極５２とゲート電極５３間に電圧をかけること
により電子放出を起こすものである（特開昭６３−２７
４０４７号）。前記冷陰極５２はＦＩＢ（Focusd IonBe
am ）技術を用いて形成されており、特に凸状部の先端
は尖鋭に形成している。The thin film field emission type electron source shown in FIG. 9 has a cold cathode 52 and a gate electrode 53 facing each other in an amount of 0.3 to 2 μm.
Films are formed on an insulating substrate 51 at intervals of m, and electrons are emitted by applying a voltage between the cold cathode 52 and the gate electrode 53 in vacuum (Japanese Patent Laid-Open No. 63-27).
No. 4047). The cold cathode 52 is a FIB (Focusd IonBe).
am) technology, and in particular, the tip of the convex portion is sharply formed.
【０００５】しかし、ＦＩＢ技術を用いた場合、素子の
大面積化が困難でかつ製造コストも高くなってしまう。However, when the FIB technique is used, it is difficult to increase the area of the element and the manufacturing cost becomes high.
【０００６】一方、大面積化，製造コストを考えた場
合、フォトリソグラフィー技術を用いたパターニングが
妥当である。しかし、現在のフォトリソググラフィー技
術では、電子ビームスポット径が最小のパターンニング
径となるため、直径０．５μｍ程度が限界である。この
ため冷陰極５２の先端を尖鋭に形成するには、更に様々
なプロセスを加えなくてはならない。On the other hand, in consideration of the increase in area and the manufacturing cost, patterning using the photolithography technique is appropriate. However, in the current photolithography technique, the electron beam spot diameter is the minimum patterning diameter, so the diameter is about 0.5 μm. Therefore, in order to form the tip of the cold cathode 52 sharp, various processes must be added.
【０００７】この場合、プロセスが増加するほど、その
間の素子損傷、特に冷陰極先端部を損傷する可能性が高
まり、素子の歩留まりの低下の原因となっている。また
それら冷陰極尖鋭化プロセスのほとんどは煩雑であり、
形状制御が困難である。In this case, as the number of processes increases, the possibility of damage to the device during the process, especially the damage to the tip of the cold cathode increases, which causes a decrease in device yield. Also, most of those cold cathode sharpening processes are complicated,
Shape control is difficult.
【０００８】図１０に示す薄膜電界放射型の電子源は、
絶縁体基板６１上の絶縁層６２の表面に、超音波による
壁開，破断の方法で冷陰極６３，ゲート電極６４を平行
に形成したものである（特開平３−４９１２９号）。The thin film field emission type electron source shown in FIG.
A cold cathode 63 and a gate electrode 64 are formed in parallel on the surface of an insulating layer 62 on an insulating substrate 61 by a method of wall opening and breaking by ultrasonic waves (JP-A-3-49129).
【０００９】しかし、この図１０に示す薄膜電界放射型
の電子源の場合、超音波による破断を伴うものであるた
め、冷陰極６３の形状の均一化を図ることが技術的に困
難であるとともに、冷陰極６３を形成する薄膜に対する
ダメージが大きいという問題がある。However, in the case of the thin film field emission type electron source shown in FIG. 10, it is technically difficult to make the shape of the cold cathode 63 uniform because it is broken by ultrasonic waves. There is a problem that the thin film forming the cold cathode 63 is greatly damaged.
【００１０】図１１，図１２に示す薄膜電界放射型の電
子源は、フォトエッチング技術を用いて絶縁体基板７１
上の絶縁層７２の上に多数の凸状部を持つ冷陰極７３を
形成した後に、等方性エッチング技術を利用して凸状部
の先端を尖鋭化したものである（特開平３−２５２０２
５号）。尚、図１１中、７４は冷陰極７３と対向するゲ
ート電極である。しかし、この電子源の場合、エッチン
グ条件による冷陰極７３の形状の制御が困難である。さ
らに、側壁保護膜の形成等によりアンダーカットが進行
しないような場合には適用できない。The thin film field emission type electron source shown in FIGS. 11 and 12 is made of an insulating substrate 71 using a photoetching technique.
After forming a cold cathode 73 having a large number of convex portions on the upper insulating layer 72, the tip of the convex portion is sharpened by using an isotropic etching technique (Japanese Patent Laid-Open No. 3-25202).
No. 5). In FIG. 11, 74 is a gate electrode facing the cold cathode 73. However, in the case of this electron source, it is difficult to control the shape of the cold cathode 73 depending on the etching conditions. Furthermore, it cannot be applied to the case where the undercut does not proceed due to the formation of the side wall protective film.
【００１１】また、化学的に安定であり、真空中に電子
を放出し易い低仕事関数材料である遷移金属炭化物，金
属酸化物あるいは希土類酸化物を冷陰極７３の表面に被
覆することも考えられている（特開平２−２２０３３７
号）。しかし、冷陰極７３等に限定して被覆することは
困難である。It is also conceivable to coat the surface of the cold cathode 73 with a transition metal carbide, a metal oxide or a rare earth oxide which is a chemically stable and low work function material which easily emits electrons in a vacuum. (JP-A-2-220337)
issue). However, it is difficult to cover only the cold cathode 73 and the like.
【００１２】[0012]
【発明が解決しようとする課題】上述したように、従来
の電界放射型電子源の場合、冷陰極先端の尖鋭化をはじ
めとする冷陰極の形状を適切に設定できなかったり、低
仕事関数を有し化学的に安定な材料を、微細加工の困難
性から冷陰極として用いることができなかった。このた
め、特性が良好で、かつ、安定した電界放射型電子源を
得ることができないという問題があった。As described above, in the case of the conventional field emission electron source, the shape of the cold cathode such as sharpening of the tip of the cold cathode cannot be appropriately set, or the low work function is not achieved. A chemically stable material could not be used as a cold cathode because of the difficulty of microfabrication. Therefore, there is a problem that it is not possible to obtain a stable field emission type electron source having good characteristics.
【００１３】そこで、本発明は、低電圧駆動が可能でか
つ高い放出電流が安定して得られ、冷陰極の加工性に優
れ、素子の大面積化が可能な冷陰極電子源素子を提供す
るものでる。Therefore, the present invention provides a cold cathode electron source device which can be driven at a low voltage, stably obtains a high emission current, has excellent workability of a cold cathode, and can have a large area. It comes.
【００１４】[0014]
【課題を解決するための手段】請求項１記載の冷陰極電
子源素子は、冷陰極基体と、この冷陰極基体に分散含有
させた仕事関数が前記冷陰極基体の仕事関数よりも低い
導電性材料とを有するものである。A cold cathode electron source element according to claim 1, wherein the cold cathode substrate and the work function dispersedly contained in the cold cathode substrate are lower than the work function of the cold cathode substrate. And a material.
【００１５】請求項２記載の冷陰極電子源素子は、前記
導電性材料が冷陰極表面に突出状態で分散しているもの
である。In the cold cathode electron source element according to the second aspect, the conductive material is dispersed on the surface of the cold cathode in a protruding state.
【００１６】請求項３記載の冷陰極電子源素子は、前記
導電性材料の平均粒径が０．１μｍ以下としたものであ
る。In the cold cathode electron source element according to the third aspect of the present invention, the conductive material has an average particle size of 0.1 μm or less.
【００１７】[0017]
【作用】請求項１記載の冷陰極電子源素子によれば、冷
陰極基体に対して仕事関数が前記冷陰極基体の仕事関数
よりも低い導電性材料を分散含有させたので、低電圧で
電子を引き出せるとともに高い放出電流が得られる。ま
た、通常のフォトプロセスと、エッチングにより前記冷
陰極基体を加工できるため、任意の形状を簡易に設定で
き、冷陰極電子源素子の大面積化が可能である。According to the cold cathode electron source device of the present invention, since the conductive material having a work function lower than the work function of the cold cathode substrate is dispersedly contained in the cold cathode substrate, the electron is applied at a low voltage. And a high emission current can be obtained. Further, since the cold cathode substrate can be processed by a normal photo process and etching, an arbitrary shape can be easily set, and the area of the cold cathode electron source element can be increased.
【００１８】請求項２記載の冷陰極電子源素子によれ
ば、前記導電性材料が冷陰極表面に突出状態で分散して
いるので、電界の集中により低電圧で電子が引き出せる
とともに、高い放出電流が得られる。According to the cold cathode electron source element of the present invention, since the conductive material is dispersed on the surface of the cold cathode in a protruding state, electrons can be extracted at a low voltage due to the concentration of an electric field, and a high emission current is obtained. Is obtained.
【００１９】請求項３記載の冷陰極電子源素子によれ
ば、前記導電性材料の平均粒径を０．１μｍ以下として
いるので、高い放出電流が得られるとともに、多数の電
子放出点を形成でき、安定した放出電流特性を得られ
る。According to the cold cathode electron source element of the third aspect, since the average particle diameter of the conductive material is 0.1 μm or less, a high emission current can be obtained and a large number of electron emission points can be formed. A stable emission current characteristic can be obtained.
【００２０】また、陰極形状を従来のように複雑なプロ
セスで曲率半径の小さい尖端部を有するように形成する
必要がない。Further, it is not necessary to form the cathode shape to have the tip portion having a small radius of curvature by a complicated process as in the conventional case.
【００２１】[0021]
【実施例】以下に本発明の実施例を詳細に説明する。EXAMPLES Examples of the present invention will be described in detail below.
【００２２】（実施例１）図１に示す冷陰極電子源素子
は、絶縁性基板１の表面に、ＳｉＯ2 の絶縁層２とゲー
ト電極７とを設け、このゲート電極７に近接する前記絶
縁層２上に冷陰極（エミッタ）１０を形成したものであ
る。冷陰極１０は、導電性微粒子８を分散含有させた導
電性マトリックス体４により構成している。[0022] (Example 1) the cold cathode electron source element of FIG. 1, the insulation on the surface of an insulating substrate 1 is provided with an insulating layer 2 and the gate electrode 7 of SiO 2, adjacent to the gate electrode 7 The cold cathode (emitter) 10 is formed on the layer 2. The cold cathode 10 is composed of a conductive matrix body 4 containing conductive fine particles 8 dispersed therein.
【００２３】特性の良い冷陰極電子源素子を作製するた
めには仕事関数が低くかつ化学的に安定な材料を用い
て、極力，曲率半径の小さい前記導電性微粒子８を形成
するとともに、冷陰極１０とゲート電極７との距離を近
接させて配置するように設計すればよい。In order to manufacture a cold cathode electron source device having good characteristics, a material having a low work function and a chemically stable property is used to form the conductive fine particles 8 having a radius of curvature as small as possible, and at the same time, a cold cathode is used. The gate electrode 7 and the gate electrode 7 may be designed to be close to each other.
【００２４】前記導電性微粒子８としては、化学的に安
定であり、真空中に電子を放出し易い低仕事関数の材料
を用いる。即ち、ＴｉＣ，ＺｒＣ，ＨｆＣ，ＴａＣ，Ｎ
ｂＣ，ＭｏＣ，ＷＣ等の金属炭化物、ＴａＮ，ＴｉＮ，
ＺｒＮ，ＨｆＮ等の金属窒化物、ＬａＢ6 ，ＴｉＢ2 ，
ＺｒＢ2 ，ＨｆＢ2 等の希土類、金属ほう化物、Ｙ2Ｏ
3 ，ＺｒＯ2 ，ＴｈＯ2 等の金属酸化物、Ｌａ2 Ｏ3 ，
ＣｅＯ2 ，Ｐｒ2 Ｏ3等の希土類酸化物、またはこれら
を少なくとも一種類以上含んだものを用いる。As the conductive fine particles 8, a material having a low work function which is chemically stable and easily releases electrons in vacuum is used. That is, TiC, ZrC, HfC, TaC, N
Metal carbides such as bC, MoC, WC, TaN, TiN,
Metal nitrides such as ZrN and HfN, LaB 6 , TiB 2 ,
Rare earths such as ZrB 2 and HfB 2 , metal borides, Y 2 O
3 , metal oxides such as ZrO 2 , ThO 2 , La 2 O 3 ,
A rare earth oxide such as CeO 2 or Pr 2 O 3 or a material containing at least one of these is used.
【００２５】前記導電性マトリックス体４の材料として
は、前記導電性微粒子８が炭化物である場合には、炭化
されにくい良導体材料、例えば、Ａｕ，Ａｇ，Ｐｔ，Ｃ
ｕ，Ｎｉ，Ａｌ等を用いる。As the material of the conductive matrix body 4, when the conductive fine particles 8 are a carbide, a good conductor material which is hard to be carbonized, for example, Au, Ag, Pt, C.
u, Ni, Al or the like is used.
【００２６】前記導電性微粒子８が窒化物である場合に
は、窒化されにくい良導体材料、例えば、Ａｕ，Ａｇ，
Ｐｔ，Ｃｕ，Ｎｉ等又はこれらを少なくとも一種類以上
含んだものを用いる。When the conductive fine particles 8 are nitrides, a good conductor material which is not easily nitrided, such as Au, Ag,
Pt, Cu, Ni, or the like, or one containing at least one of these is used.
【００２７】また、前記導電性微粒子８がほう化物であ
る場合には、ほう化されにくい良導体材料、例えば、Ａ
ｕ，Ａｇ，Ｐｔ，Ｃｕ，Ｎｉ等又はこれらを少なくとも
一種類以上含んだものを用いる。Further, when the conductive fine particles 8 are boride, a good conductor material which is not easily borated, for example, A
u, Ag, Pt, Cu, Ni, or the like containing at least one or more of these is used.
【００２８】さらに、前記導電性微粒子８が酸化物であ
る場合には、酸化されにくい良導体材料、例えば、Ａ
ｕ，Ｐｔ等、またはこれらを少なくとも一種類以上含ん
だものを用いる。Further, when the conductive fine particles 8 are oxides, a good conductor material that is not easily oxidized, such as A
u, Pt, or the like, or one containing at least one of these is used.
【００２９】次に、前記冷陰極電子源素子の製造工程を
説明する。Next, a manufacturing process of the cold cathode electron source element will be described.
【００３０】まず、図２に示すように、ガラス製の絶縁
性基板１の表面に、スパッタリング法を用いてＳｉＯ2
の絶縁層２を１μｍの厚さに成膜する。次に、反応性イ
オンプレーティング法により、図３に示すように、導電
性微粒子８であるＴｉＣ粒子が導電性マトリックス体４
であるＮｉ中に微細分散した薄膜を厚さを０．３μｍ成
膜し冷陰極１０とする。First, as shown in FIG. 2, SiO 2 is formed on the surface of the insulating substrate 1 made of glass by a sputtering method.
The insulating layer 2 is formed to a thickness of 1 μm. Next, by the reactive ion plating method, as shown in FIG. 3, the TiC particles which are the conductive fine particles 8 are converted into the conductive matrix body 4.
A thin film finely dispersed in Ni is formed to a thickness of 0.3 μm to form the cold cathode 10.
【００３１】前記反応性イオンプレーティング法につい
ては、基板温度６７３Ｋ、蒸着源としてＮｉ−５０％Ｔ
ｉ合金を電子ビーム加熱し、Ｃ源としてＣ2 Ｈ2 ガスを
０．１１Ｐａで導入し、また、イオン化するためのプロ
ーブ電流２Ａ、基板−ハース間バイアス２ｋＶとした。Regarding the reactive ion plating method, the substrate temperature is 673 K, and the evaporation source is Ni-50% T.
The i alloy was heated with an electron beam, C 2 H 2 gas was introduced as a C source at 0.11 Pa, and a probe current for ionization was 2 A and a bias between the substrate and the hearth was 2 kV.
【００３２】次に、図４に示すように、冷陰極１０上に
レジスト５を設けた後、前記冷陰極１０に対してフォト
プロセス及び硝酸−りん酸系ウェットエッチングを用い
た成形を行い、更に、絶縁層２をＢＨＦによりウエット
エッチングする（この時冷陰極１０上のレジスト５はそ
のまま除去しない）。Next, as shown in FIG. 4, after a resist 5 is provided on the cold cathode 10, the cold cathode 10 is molded using a photo process and nitric acid-phosphoric acid wet etching. The insulating layer 2 is wet-etched with BHF (at this time, the resist 5 on the cold cathode 10 is not removed as it is).
【００３３】更に、図５に示すように、全面にＣｒ膜６
及びゲート電極７としてのＣｒ膜を蒸着法により０．３
μｍの厚さに形成する。この後、図６に示すように、レ
ジスト５，前記Ｃｒ膜６を剥離液によって除去する。Further, as shown in FIG. 5, a Cr film 6 is formed on the entire surface.
And a Cr film as the gate electrode 7 by a vapor deposition method to 0.3.
It is formed to a thickness of μm. Thereafter, as shown in FIG. 6, the resist 5 and the Cr film 6 are removed by a stripping solution.
【００３４】また、前記フォトプロセスによる冷陰極１
０のパターニングの一例を図７に示す。The cold cathode 1 produced by the photo process is also used.
An example of 0 patterning is shown in FIG.
【００３５】また、特に限定するわけではないが、好ま
しくは導電性マトリックス体４に対して導電性微粒子８
を２５ｖｏｌ％以下になるようにすることで、導電性微
粒子８間の分散性が高まり、導電性マトリックス体４の
エッチングを容易にするとともに、各導電性微粒子８ご
とへの電界の集中を可能にする。Although not particularly limited, the conductive fine particles 8 are preferably added to the conductive matrix body 4.
Is 25 vol% or less, the dispersibility between the conductive fine particles 8 is enhanced, the conductive matrix body 4 is easily etched, and the electric field can be concentrated on each conductive fine particle 8. To do.
【００３６】従来の冷陰極電子源素子の場合、ゲート電
圧１２０Ｖ付近から電子放出が確認され、放出電流変動
が３０％程度であったのに対し、実施例１の冷陰極電子
源素子の場合、ゲート電圧４０Ｖ付近から電子放出が確
認され、放出電流変動は５％以下であった。これは、仕
事関数が低く、吸着ガス等のよる影響を受けにくい非常
に化学的に安定なＴｉＣを曲率半径５０ｎｍ以下の導電
性微粒子８として形成できたこと、また、導電性マトリ
ックス体４に対して分散含有させ、かつ、導電性マトリ
ックス体４の表面に突出させた導電性微粒子８を高密度
に形成できたことにより、低電圧から電子放出が起こ
り、電子放出量が増加し、電子放出特性が平均化されて
安定な電子放出特性を得ることができたものと考えられ
る。In the case of the conventional cold cathode electron source element, electron emission was confirmed from around the gate voltage of 120 V, and the emission current fluctuation was about 30%, whereas in the case of the cold cathode electron source element of Example 1, Electron emission was confirmed around a gate voltage of 40 V, and the emission current fluctuation was 5% or less. This is because TiC, which has a low work function and is not easily influenced by an adsorbed gas or the like, can be formed as the conductive fine particles 8 having a radius of curvature of 50 nm or less. Since the conductive fine particles 8 dispersedly contained in the conductive matrix body 4 and protruding on the surface of the conductive matrix body 4 can be formed at a high density, electron emission occurs from a low voltage, the electron emission amount increases, and the electron emission characteristics are increased. It is considered that stable electron emission characteristics were obtained by averaging.
【００３７】さらに、前記導電性微粒子８自体は化学的
に安定であるため、エッチング等の微細加工プロセスを
施すことが困難であるが、導電性マトリックス体４をエ
ッチングすることで容易に冷陰極電子源素子を形成でき
る。Further, since the conductive fine particles 8 themselves are chemically stable, it is difficult to perform a fine processing process such as etching. However, by etching the conductive matrix body 4, cold cathode electrons can be easily obtained. The source element can be formed.
【００３８】この際、導電性微粒子８の曲率半径が小さ
く、突出状態にあるために、冷陰極１０の端部を特に尖
鋭に形成する必要がなくなり、製造プロセスが技術的に
簡易化されることになり、歩留まりの向上を図ることに
もなる。At this time, since the radius of curvature of the conductive fine particles 8 is small and the conductive fine particles 8 are in a protruding state, it is not necessary to form the end portion of the cold cathode 10 particularly sharply, and the manufacturing process is technically simplified. Therefore, the yield will be improved.
【００３９】（実施例２）ガラス基板の表面に、スパッ
タリング法を用いてＳｉＯ2 からなる絶縁層を１μｍの
厚さに形成する。更に、前記絶縁層の表面に図８に示す
スパッタリング装置を用いて同時スパッタリング法によ
り薄膜を０．３μｍの厚さに形成し、冷陰極とする。前
記薄膜はＮｉ中にＴｉＣ粒子を微細分散させたものであ
る。Example 2 An insulating layer made of SiO 2 is formed on the surface of a glass substrate by sputtering to have a thickness of 1 μm. Further, a thin film having a thickness of 0.3 μm is formed on the surface of the insulating layer by the co-sputtering method using the sputtering apparatus shown in FIG. 8 to form a cold cathode. The thin film is obtained by finely dispersing TiC particles in Ni.
【００４０】同時スパッタリング法におけるスパッタリ
ング条件は、図８に示すように、Ｎｉ製のターゲット１
１上にＴｉチップ１２を載置し、このターゲット１１に
対峙した絶縁製基板１に対してＮｉ中にＴｉＣ粒子を微
細分散させた薄膜を形成するものである。The sputtering conditions for the simultaneous sputtering method are as shown in FIG.
The Ti chip 12 is placed on the target substrate 1, and a thin film in which TiC particles are finely dispersed in Ni is formed on the insulating substrate 1 facing the target 11.
【００４１】この場合、真空度は０．５Ｐａ、雰囲気は
エチレンガス（メタンガス，プロパンガス，アセチレン
ガスとしてもよい。）、電源１３のＲＦパワーは５００
Ｗ、基板温度は摂氏２００度、Ｔｉチップ（またはＴｉ
Ｃチップ）１２は例えば１０×１０×１ｍｍのものを４
個とする。In this case, the degree of vacuum is 0.5 Pa, the atmosphere is ethylene gas (may be methane gas, propane gas, or acetylene gas), and the RF power of the power source 13 is 500.
W, substrate temperature is 200 degrees Celsius, Ti chip (or Ti
C chip) 12 is, for example, 4 × 10 × 10 × 1 mm
To be individual.
【００４２】次に、実施例１の場合と同様、前記冷陰極
をフォトプロセス及びリン酸硝酸系によるウェットエッ
チングにより成形し、更に、ＳｉＯ2 をＢＨＦによりウ
ェットエッチングする。更にこの上から、垂直入射の条
件でゲート電極用のＣｒ膜を０．３μｍの厚さに蒸着す
る。Next, as in the case of Example 1, the cold cathode is formed by photoprocess and wet etching with a phosphoric acid / nitric acid system, and further SiO 2 is wet etched with BHF. Further, a Cr film for a gate electrode is vapor-deposited thereon to a thickness of 0.3 μm under the condition of vertical incidence.
【００４３】この後、実施例１の場合と同様、レジスト
及びこのレジスト上の不用のＣｒ膜を剥離液により除去
し冷陰極電子源素子を得る。Thereafter, as in the case of Example 1, the resist and the unnecessary Cr film on this resist are removed by a stripping solution to obtain a cold cathode electron source element.
【００４４】また、特に限定するわけではないが、好ま
しくは導電性マトリックス体４に対して導電性微粒子８
を２５ｖｏｌ％以下になるようにすることで、導電性微
粒子８間の分散性が高まり、導電性マトリックス体４の
エッチングを容易にするとともに、各導電性微粒子８ご
とへの電界の集中を可能にする。Although not particularly limited, the conductive fine particles 8 are preferably added to the conductive matrix body 4.
Is 25 vol% or less, the dispersibility between the conductive fine particles 8 is enhanced, the conductive matrix body 4 is easily etched, and the electric field can be concentrated on each conductive fine particle 8. To do.
【００４５】従来の冷陰極電子源素子の場合、ゲート電
圧１２０Ｖ付近から電子放出が確認され、放出電子流変
動が３０％程度であったの対し、実施例１の冷陰極電子
源素子の場合、ゲート電圧４０Ｖ付近から電子放出が確
認され、放出電子流変動は５％以下であった。In the case of the conventional cold cathode electron source element, electron emission was confirmed from around the gate voltage of 120 V, and the variation of the emitted electron flow was about 30%, whereas in the case of the cold cathode electron source element of Example 1, Electron emission was confirmed near the gate voltage of 40 V, and the variation of the emitted electron flow was 5% or less.
【００４６】これは、仕事関数が低く、吸着ガス等によ
る影響を受けにくい非常に化学的に安定なＴｉＣを曲率
半径５０ｎｍ以下の導電性微粒子８として形成できたこ
と、また、導電性マトリックス体４に対して分散含有さ
せ、かつ、導電性マトリックス体４の表面に突出させた
導電性微粒子８を高密度に形成できたことにより、低電
圧から電子放出が起こり、電子放出量が増加し、電子放
出特性が平均化されて安定な電子放出特性を得ることが
できたものと考えられる。This is because TiC, which has a low work function and is not easily affected by the adsorbed gas or the like, can be formed as the electrically conductive fine particles 8 having a radius of curvature of 50 nm or less. Since the conductive fine particles 8 dispersedly contained and protruding on the surface of the conductive matrix body 4 can be formed at a high density, electron emission occurs from a low voltage, the electron emission amount increases, and It is considered that the emission characteristics were averaged and stable electron emission characteristics could be obtained.
【００４７】さらに、導電性微粒子８自体は化学的に安
定なため、エッチング等の微細加工プロセスを施すこと
が困難であるが、導電性マトリックス体４をエッチング
することで、容易に冷陰極電子源素子を形成できる。Further, since the conductive fine particles 8 themselves are chemically stable, it is difficult to perform a fine processing process such as etching. However, by etching the conductive matrix body 4, the cold cathode electron source can be easily formed. An element can be formed.
【００４８】この際、導電性微粒子８の曲率半径が小さ
く、突出状態にあるために、冷陰極１０の端部を特に尖
鋭に形成する必要がなくなり、製造プロセスが技術的に
簡易化されることになり、歩留まりの向上を図ることに
もなる。At this time, since the radius of curvature of the conductive fine particles 8 is small and the conductive fine particles 8 are in a protruding state, it is not necessary to form the end portion of the cold cathode 10 particularly sharply, and the manufacturing process is technically simplified. Therefore, the yield will be improved.
【００４９】[0049]
【発明の効果】請求項１記載の発明によれば、低電圧で
電子を引き出すことができるので高い放出電流が得ら
れ、ＩＣ，ＴＦＴ等による駆動が可能になり、デバイス
の高性能化と低消費電力化が図れるとともに、通常のフ
ォトプロセスとエッチングにより冷陰極基体を加工で
き、任意の形状を簡易に設定でき、素子の大面積化が可
能な冷陰極電子源素子を提供することができる。According to the first aspect of the present invention, since electrons can be drawn out at a low voltage, a high emission current can be obtained, and driving by ICs, TFTs, etc. becomes possible, and device performance and low It is possible to provide a cold cathode electron source element that can reduce power consumption, can process a cold cathode substrate by a normal photo process and etching, can easily set an arbitrary shape, and can increase the area of the element.
【００５０】請求項２記載の発明によれば、前記導電性
材料が冷陰極表面に突出状態で分散しているので、電界
の集中により低電圧で電子が引き出せるとともに、高い
放出電流を得ることができる冷陰極電子源素子を提供す
ることができる。According to the second aspect of the invention, since the conductive material is dispersed on the surface of the cold cathode in a protruding state, electrons can be extracted at a low voltage due to the concentration of the electric field, and a high emission current can be obtained. A cold cathode electron source device that can be provided can be provided.
【００５１】請求項３記載の発明によれば、前記導電性
材料の平均粒径を０．１μｍ以下とすることで、高い放
出電流が得られるとともに、安定した放出電流特性を発
揮する冷陰極電子源素子を提供することができる。According to the third aspect of the present invention, by setting the average particle diameter of the conductive material to 0.1 μm or less, a high emission current can be obtained and a cold cathode electron exhibiting stable emission current characteristics. A source element can be provided.
【図１】本発明の実施例１における冷陰極電子源素子を
示す部分拡大斜視図FIG. 1 is a partially enlarged perspective view showing a cold cathode electron source device according to a first embodiment of the present invention.
【図２】本発明の実施例１の冷陰極電子源素子の製造工
程を示す断面図FIG. 2 is a sectional view showing a manufacturing process of a cold cathode electron source element according to Example 1 of the present invention.
【図３】本発明の実施例１の冷陰極電子源素子の製造工
程を示す断面図FIG. 3 is a cross-sectional view showing the manufacturing process of the cold cathode electron source element according to the first embodiment of the present invention.
【図４】本発明の実施例１の冷陰極電子源素子の製造工
程を示す断面図FIG. 4 is a cross-sectional view showing the manufacturing process of the cold cathode electron source element according to the first embodiment of the present invention.
【図５】本発明の実施例１の冷陰極電子源素子の製造工
程を示す断面図FIG. 5 is a sectional view showing a manufacturing process of the cold cathode electron source element according to the first embodiment of the present invention.
【図６】本発明の実施例１の冷陰極電子源素子の製造工
程を示す断面図FIG. 6 is a cross-sectional view showing the manufacturing process of the cold cathode electron source element according to the first embodiment of the present invention.
【図７】本発明の実施例１の冷陰極電子源素子のパター
ニングの一例を示す平面図FIG. 7 is a plan view showing an example of patterning of the cold cathode electron source element according to the first embodiment of the present invention.
【図８】本発明の実施例２に用いる同時スパッタリング
装置を示す概略配置図FIG. 8 is a schematic layout diagram showing a simultaneous sputtering device used in Example 2 of the present invention.
【図９】従来の電子源の一例を示す部分斜視図FIG. 9 is a partial perspective view showing an example of a conventional electron source.
【図１０】従来の電子源の他例を示す部分斜視図FIG. 10 is a partial perspective view showing another example of a conventional electron source.
【図１１】従来の電子源の更に他例を示す部分斜視図FIG. 11 is a partial perspective view showing still another example of the conventional electron source.
【図１２】従来の電子源の更に他例を示す部分斜視図FIG. 12 is a partial perspective view showing still another example of the conventional electron source.
１ 絶縁性基板 ２ 絶縁層 ４ 電気導電性マトリックス体 ７ ゲート電極 ８ 電子放出微粒子 １０ 冷陰極 1 Insulating Substrate 2 Insulating Layer 4 Electrically Conductive Matrix Body 7 Gate Electrode 8 Electron Emitting Fine Particles 10 Cold Cathode
Claims (3)
有させた仕事関数が前記冷陰極基体の仕事関数よりも低
い導電性材料とを有することを特徴とする冷陰極電子源
素子。1. A cold cathode electron source element comprising a cold cathode substrate and a conductive material having a work function dispersed and contained in the cold cathode substrate lower than the work function of the cold cathode substrate.
で分散している請求項１記載の冷陰極電子源素子。2. The cold cathode electron source element according to claim 1, wherein the conductive material is dispersed on the surface of the cold cathode in a protruding state.
以下である請求項１又は２記載の冷陰極電子源素子。3. The average particle diameter of the conductive material is 0.1 μm.
The cold cathode electron source device according to claim 1 or 2, wherein:
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29335793A JP3444943B2 (en) | 1993-11-24 | 1993-11-24 | Cold cathode electron source device |
| EP95900936A EP0681312B1 (en) | 1993-11-24 | 1994-11-22 | Cold-cathode electron source element and method for producing the same |
| DE69432174T DE69432174T2 (en) | 1993-11-24 | 1994-11-22 | COLD CATHODE ELECTRODE SOURCE ELEMENT AND METHOD FOR PRODUCING THE SAME |
| PCT/JP1994/001976 WO1995015002A1 (en) | 1993-11-24 | 1994-11-22 | Cold-cathode electron source element and method for producing the same |
| US08/347,133 US5760536A (en) | 1993-11-24 | 1994-11-23 | Cold cathode electron source element with conductive particles embedded in a base |
| US08/962,735 US5860844A (en) | 1993-11-24 | 1997-11-03 | Cold cathode electron source element and method for making |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29335793A JP3444943B2 (en) | 1993-11-24 | 1993-11-24 | Cold cathode electron source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07147128A true JPH07147128A (en) | 1995-06-06 |
| JP3444943B2 JP3444943B2 (en) | 2003-09-08 |
Family
ID=17793749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29335793A Expired - Fee Related JP3444943B2 (en) | 1993-11-24 | 1993-11-24 | Cold cathode electron source device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3444943B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417606B1 (en) | 1998-10-12 | 2002-07-09 | Kabushiki Kaisha Toshiba | Field emission cold-cathode device |
| KR100769721B1 (en) * | 2006-10-16 | 2007-10-24 | 삼성전기주식회사 | Vertically structured field emission display and method of manufacturing the same |
| US11908962B2 (en) | 2012-05-18 | 2024-02-20 | Oxford University Innovation Limited | Optoelectronic device comprising perovskites |
-
1993
- 1993-11-24 JP JP29335793A patent/JP3444943B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6417606B1 (en) | 1998-10-12 | 2002-07-09 | Kabushiki Kaisha Toshiba | Field emission cold-cathode device |
| KR100769721B1 (en) * | 2006-10-16 | 2007-10-24 | 삼성전기주식회사 | Vertically structured field emission display and method of manufacturing the same |
| US11908962B2 (en) | 2012-05-18 | 2024-02-20 | Oxford University Innovation Limited | Optoelectronic device comprising perovskites |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3444943B2 (en) | 2003-09-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3998678A (en) | Method of manufacturing thin-film field-emission electron source | |
| US6333598B1 (en) | Low gate current field emitter cell and array with vertical thin-film-edge emitter | |
| US6448701B1 (en) | Self-aligned integrally gated nanofilament field emitter cell and array | |
| US5214346A (en) | Microelectronic vacuum field emission device | |
| US6590322B2 (en) | Low gate current field emitter cell and array with vertical thin-film-edge emitter | |
| US6899584B2 (en) | Insulated gate field emitter array | |
| Kanemaru et al. | Fabrication and characterization of lateral field-emitter triodes | |
| US5760536A (en) | Cold cathode electron source element with conductive particles embedded in a base | |
| Rakhshandehroo et al. | Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current | |
| KR100243990B1 (en) | Field emission cathode and method for manufacturing the same | |
| US6924158B2 (en) | Electrode structures | |
| Rakhshandehroo et al. | High current density Si field emission devices with plasma passivation and HfC coating | |
| JP3444943B2 (en) | Cold cathode electron source device | |
| US6777169B2 (en) | Method of forming emitter tips for use in a field emission display | |
| JP2601091B2 (en) | Electron-emitting device | |
| JP2005310724A (en) | Field emission type electron source and manufacturing method for it | |
| JP3452222B2 (en) | Cold cathode electron source device and method of manufacturing the same | |
| Yun et al. | Novel lateral field emission device fabricated on silicon-on-insulator material | |
| JP4312326B2 (en) | Electron emission device | |
| US6664721B1 (en) | Gated electron field emitter having an interlayer | |
| JPH1154025A (en) | Cold electron emitting element and its manufacture | |
| JP2738197B2 (en) | Electron-emitting device | |
| KR100701750B1 (en) | Field Emission Array and method for fabricating same | |
| JPH0785397B2 (en) | Electron-emitting device | |
| Wang et al. | Fabrication and emission properties of LaB6 field emission microtriodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20030617 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |