JPH07130698A - Apparatus for wafer surface treatment - Google Patents

Apparatus for wafer surface treatment

Info

Publication number
JPH07130698A
JPH07130698A JP29476693A JP29476693A JPH07130698A JP H07130698 A JPH07130698 A JP H07130698A JP 29476693 A JP29476693 A JP 29476693A JP 29476693 A JP29476693 A JP 29476693A JP H07130698 A JPH07130698 A JP H07130698A
Authority
JP
Japan
Prior art keywords
substrate
pure water
tank
rinse
rinse tank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29476693A
Other languages
Japanese (ja)
Other versions
JP3126859B2 (en
Inventor
Masato Tanaka
真人 田中
Kazunori Fujikawa
和憲 藤川
Yusuke Muraoka
祐介 村岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP29476693A priority Critical patent/JP3126859B2/en
Publication of JPH07130698A publication Critical patent/JPH07130698A/en
Application granted granted Critical
Publication of JP3126859B2 publication Critical patent/JP3126859B2/en
Anticipated expiration legal-status Critical
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Links

Abstract

PURPOSE:To provide a space-saving wafer surface treatment system, in which rinsed wafers are kept out of dust particles or gas until they are completely dray, so as to improve system throughput and yield. CONSTITUTION:An integrated dryer-cleaner tank 10 comprises a cleaning tank 12 confined enclosure chamber 16. Wafers W washed in the cleaning tank are rinsed with pure wafer, and they are dried in the enclosure chamber 16, which contains vaporized organic solvent at reduced pressure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体デバイス製造
プロセス、液晶ディスプレイ製造プロセス、電子部品関
連製造プロセスなどにおいて、シリコンウエハ、ガラス
基板、電子部品等の各種基板を薬液及び純水で洗浄処理
し、その後に基板表面を乾燥処理するのに使用される基
板の表面処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a semiconductor device manufacturing process, a liquid crystal display manufacturing process, an electronic part-related manufacturing process, etc., in which various substrates such as silicon wafers, glass substrates and electronic parts are washed with a chemical solution and pure water. , A substrate surface treatment apparatus which is subsequently used to dry the substrate surface.

【0002】[0002]

【従来の技術】基板、例えばシリコンウエハを薬液及び
純水を用いて洗浄し、その後にウエハ表面を乾燥処理す
る装置として、従来、例えば図4に概略平面レイアウト
図を示すような構成のものが使用されている。この装置
は、所要の洗浄用薬液を収容し、その薬液中に基板を浸
漬させることにより基板に対し所要の洗浄処理を施す1
つ又は複数、図示例のものは3つの薬液洗浄槽1、2、
3、純水を収容し、その純水中に基板を浸漬させて基板
を純水で洗浄する1つ又は複数、図示例のものは3つの
純水洗浄槽1、2、3、純水を用いて最終的に基板をリ
ンス処理する最終リンス槽、及び、最終リンス処理され
た基板の表面を乾燥させる乾燥処理部を連設し、薬液洗
浄槽1に隣接して、洗浄前の基板を複数枚収容して搬入
されてきたカセットを載置しておくローダを設けるとと
もに、乾燥処理部に隣接して、洗浄及び乾燥処理を終え
た基板を収容したカセットを載置しそのカセットの搬出
が行なわれるアンローダを設け、ローダ、薬液洗浄槽、
純水洗浄槽、最終リンス槽、乾燥処理部及びアンローダ
の各間での基板の搬送を行なう基板搬送ロボット、及
び、空のカセットをローダからアンローダへ移送するた
めのカセットトラックなどを備えて構成されている。そ
れぞれの薬液洗浄槽には、例えば、薬液洗浄槽1にはア
ンモニア水及び過酸化水素水の混合溶液が、薬液洗浄槽
2にはフッ酸が、薬液洗浄槽3には塩酸及び過酸化水素
水の混合溶液が入っている。また、乾燥処理部に設置さ
れる基板の乾燥処理装置としては、遠心力によって基板
の表面から純水を振り切って乾燥させるスピンドライヤ
や、基板の表面に付着した純水をイソプロピルアルコー
ル等の有機溶剤の蒸気で置換することによって乾燥させ
る有機溶剤蒸気乾燥装置が使用される。
2. Description of the Related Art As a device for cleaning a substrate, for example, a silicon wafer with a chemical solution and pure water, and then drying the surface of the wafer, there has conventionally been used a device having a structure shown in a schematic plan layout diagram in FIG. 4, for example. It is used. This apparatus accommodates a required cleaning chemical solution and immerses the substrate in the chemical solution to perform the required cleaning treatment on the substrate.
One or more, the illustrated example has three chemical cleaning tanks 1, 2,
3. One or a plurality of pure water is stored in the pure water, and the substrate is immersed in the pure water to wash the substrate with pure water. A final rinsing tank for finally rinsing the substrate by using it and a drying processing section for drying the surface of the substrate after the final rinsing treatment are connected in series, and a plurality of substrates before cleaning are provided adjacent to the chemical solution cleaning tank 1. A loader is provided for loading the cassettes that have been loaded and loaded, and a cassette that contains the cleaned and dried substrates is placed adjacent to the drying processing unit and the cassette is unloaded. Equipped with an unloader, a loader, a chemical cleaning tank,
It is provided with a deionized water cleaning tank, a final rinse tank, a substrate transfer robot for transferring a substrate between each of the drying processing section and the unloader, and a cassette truck for transferring an empty cassette from the loader to the unloader. ing. In the respective chemical cleaning tanks, for example, the chemical cleaning tank 1 contains a mixed solution of ammonia water and hydrogen peroxide water, the chemical cleaning tank 2 contains hydrofluoric acid, and the chemical cleaning tank 3 contains hydrochloric acid and hydrogen peroxide solution. Contains a mixed solution of. Further, as a substrate drying apparatus installed in the drying processing unit, a spin dryer for shaking off pure water from the surface of the substrate by centrifugal force to dry it, or an organic solvent such as isopropyl alcohol for deionized water attached to the surface of the substrate An organic solvent vapor dryer is used which dries by substituting the vapor of

【0003】図5は、最終リンス処理部に有機溶剤蒸気
乾燥処理部が隣接して配設された洗浄装置の一部を示す
概略断面図である。最終リンス処理部1には、リンス槽
3が設けられ、リンス槽3の底部に純水供給口が形設さ
れており、リンス槽3の上部外周に溢流水受け部4が設
けられている。そして、純水供給口を通し連続してリン
ス槽3内に純水5を供給し、リンス槽3上部の越流部か
ら純水5を溢れ出させることにより、リンス槽3の内部
において純水5の上昇水流が形成されるようになってお
り、その純水5の上昇水流中に基板Wを置くことにより
基板Wのリンス処理が行なわれる。最終的なリンス処理
が行なわれた基板Wは、乾燥処理部2へ搬送される。乾
燥処理部2には、乾燥処理槽6が設けられており、乾燥
処理槽6の内部に有機溶剤、例えばイソプロピルアルコ
ール7が入っている。そして、乾燥処理槽6内には、ア
ルコール蒸気が充満しており、そのアルコール蒸気中に
基板Wを置き図示しないリフタで基板Wを昇降させるこ
とにより、基板Wの表面に付着した純水がアルコールと
置換し、そのアルコールが速やかに基板Wの表面から蒸
発することによって基板Wの乾燥が行なわれるようにな
っている。
FIG. 5 is a schematic sectional view showing a part of a cleaning apparatus in which an organic solvent vapor drying processing section is arranged adjacent to a final rinsing processing section. The final rinse processing section 1 is provided with a rinse tank 3, a pure water supply port is formed at the bottom of the rinse tank 3, and an overflow water receiving section 4 is provided on the outer periphery of the upper portion of the rinse tank 3. Then, pure water 5 is continuously supplied into the rinse tank 3 through the pure water supply port so that the pure water 5 overflows from the overflow portion of the upper portion of the rinse tank 3, so that the pure water is rinsed inside the rinse tank 3. 5 is formed, and the substrate W is rinsed by placing the substrate W in the rising water flow of the pure water 5. The substrate W that has undergone the final rinsing process is transported to the drying processing unit 2. The drying processing section 2 is provided with a drying processing tank 6, and an organic solvent such as isopropyl alcohol 7 is contained in the drying processing tank 6. Then, the drying treatment tank 6 is filled with alcohol vapor, and the substrate W is placed in the alcohol vapor and the substrate W is moved up and down by a lifter (not shown), so that the pure water attached to the surface of the substrate W becomes alcohol. And the alcohol is quickly evaporated from the surface of the substrate W to dry the substrate W.

【0004】[0004]

【発明が解決しようとする課題】上記した従来の基板の
表面処理装置では、最終リンス処理部から乾燥処理部へ
の基板の搬送は、大気中を通って行なわれる。また、乾
燥処理部での基板の乾燥処理自体も、大気圧下において
行なわれている。このように、従来の洗浄装置では、最
終リンス処理が終わった基板を乾燥し終えるまでの間、
基板は大気に曝されることになる。
In the conventional substrate surface treatment apparatus described above, the substrate is conveyed from the final rinse treatment section to the drying treatment section through the atmosphere. Further, the drying process itself of the substrate in the drying process section is also performed under atmospheric pressure. As described above, in the conventional cleaning apparatus, until the substrate after the final rinsing process is dried,
The substrate will be exposed to the atmosphere.

【0005】ところが、最終リンス処理された基板の表
面が濡れた状態で大気に曝されると、基板表面にパーテ
ィクルが付着し易くなり、また炭酸ガス、酸素等のガス
が吸着し易くなる。また、乾燥処理中においても、従来
の洗浄装置では、完全に大気を遮断することができず基
板は大気に曝された状態になるので、同様のパーティク
ル付着やガス吸着が起こる。この結果、カーボンや重金
属等による膜汚染が起こり、半導体デバイス等の歩留り
が低下するといった問題点がある。
However, when the surface of the substrate subjected to the final rinsing treatment is exposed to the atmosphere in a wet state, particles are easily attached to the surface of the substrate, and gases such as carbon dioxide gas and oxygen are easily adsorbed. Further, even during the drying process, the conventional cleaning apparatus cannot completely shut off the atmosphere and the substrate is exposed to the atmosphere, so that similar particle adhesion and gas adsorption occur. As a result, there is a problem that film contamination by carbon, heavy metals, etc. occurs and the yield of semiconductor devices, etc. decreases.

【0006】この発明は、以上のような事情に鑑みてな
されたものであり、最終リンス処理が終わってから乾燥
処理が終了するまでの間、基板が大気に触れないように
して、基板表面へのパーティクル付着やガス吸着を無く
し、膜汚染による歩留りの低下を防ぐことができる基板
の表面処理装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and prevents the substrate from being exposed to the atmosphere from the end of the final rinsing process to the end of the drying process, so that the substrate surface is not exposed. It is an object of the present invention to provide a surface treatment apparatus for a substrate, which can eliminate the particle adhesion and the gas adsorption, and can prevent the yield decrease due to the film contamination.

【0007】[0007]

【課題を解決するための手段】この発明は、所要の洗浄
用薬液を収容し、その薬液中に基板を浸漬させることに
より所要の洗浄処理を行なう、少なくとも1つの薬液洗
浄槽と、この薬液洗浄槽で洗浄処理され必要に応じて純
水で洗浄処理された基板の表面に純水を供給し、基板を
最終的にリンス処理する最終リンス処理部と、この最終
リンス処理部で最終的にリンス処理された基板の表面を
乾燥させる乾燥処理部と、装置内での基板の搬送を行な
う基板搬送ロボットとを備えてなる基板の表面処理装置
において、前記最終リンス処理部と前記乾燥処理部とを
一体のリンス・乾燥処理装置により構成したことを要旨
とする。リンス・乾燥処理装置は、純水を供給するため
の純水供給口を底部に有するとともに純水を越流させる
ための越流部を上部に有し、内部に純水を収容してその
純水中に基板が浸漬されるようにするリンス槽と、この
リンス槽内へ前記純水供給口を通して常時純水を供給す
る純水供給手段と、前記リンス槽の前記越流部より溢れ
出た純水が流れ込む溢流水受け部と、この溢流水受け部
から純水を排出する排水手段と、前記リンス槽の上方位
置とリンス槽内部位置との間で基板を昇降移動させる基
板昇降手段とを備え、さらに、第1の構成では、有機溶
剤の蒸気を供給するための蒸気供給口を有し、前記リン
ス槽及び前記溢流水受け部の上方空間を閉鎖的に包囲す
る密閉チャンバと、この密閉チャンバ内を排気して減圧
する排気手段と、前記密閉チャンバ内へ蒸気供給口を通
して有機溶剤の蒸気を供給する蒸気供給手段とを備え、
第2の構成では、過熱蒸気を均一に分散させて前記リン
ス槽の上方空間へ水平方向に吹き出す過熱蒸気吹出し
部、及び、リンス槽の上方空間を介在させて前記過熱蒸
気吹出し部の反対側に配設され過熱蒸気吹出し部から吹
き出された過熱蒸気を吸引する過熱蒸気吸引部を有し、
前記リンス槽及び前記溢流水受け部の上方空間を閉鎖的
に包囲する密閉チャンバと、この密閉チャンバの前記過
熱蒸気吹出し部へ過熱蒸気を供給する過熱蒸気供給手段
とを備えて構成されている。前記第2の構成では、リン
ス・乾燥処理装置が、過熱蒸気吸引部を通して密閉チャ
ンバ内を真空排気して減圧する真空排気手段を備えるよ
うにしてもよい。
According to the present invention, there is provided at least one chemical cleaning tank for containing a required cleaning chemical and performing a required cleaning treatment by immersing a substrate in the chemical, and this chemical cleaning. The final rinsing unit that supplies pure water to the surface of the substrate that has been cleaned in a bath and, if necessary, cleaned with pure water, and finally rinses the substrate. In a substrate surface processing apparatus comprising a drying processing section for drying the surface of a processed substrate and a substrate transfer robot for transferring the substrate in the apparatus, the final rinse processing section and the drying processing section are provided. The gist is that it is configured with an integrated rinsing / drying processing device. The rinsing / drying treatment apparatus has a pure water supply port for supplying pure water at the bottom and an overflow portion for overflowing the pure water at the top, and stores the pure water inside. A rinse tank for immersing the substrate in water, pure water supply means for constantly supplying pure water into the rinse tank through the pure water supply port, and overflow from the overflow portion of the rinse tank. An overflow water receiving part into which pure water flows, a drainage means for discharging pure water from the overflow water receiving part, and a substrate elevating means for moving the substrate up and down between a position above the rinse tank and an inside position of the rinse tank. Further, in the first configuration, a sealed chamber that has a steam supply port for supplying the steam of the organic solvent, and surrounds the upper space of the rinse tank and the overflow water receiving part in a closed manner, and the sealed chamber. Exhaust means for exhausting the inside of the chamber to reduce the pressure, and the above-mentioned sealing And a steam supply means for supplying a vapor of the organic solvent through a steam supply port into the Yanba,
In the second configuration, the superheated steam is uniformly dispersed and blown horizontally into the space above the rinse tank, and the superheated steam blower is provided on the opposite side of the rinse tank through the space above the rinse tank. It has an overheated steam suction unit that is disposed and sucks in the overheated steam blown out from the overheated steam blowing unit,
It comprises a closed chamber that encloses the space above the rinse tank and the overflow water receiving part in a closed manner, and superheated steam supply means for supplying superheated steam to the superheated steam blowing part of the closed chamber. In the second configuration, the rinsing / drying processing apparatus may include a vacuum evacuation unit that evacuates the inside of the closed chamber through the superheated vapor suction unit to reduce the pressure.

【0008】[0008]

【作用】上記した構成の基板の表面処理装置は、薬液洗
浄後(必要に応じてさらに純水洗浄された後)に基板を
最終的にリンス処理する最終リンス処理部と最終リンス
処理された基板の表面を乾燥させる乾燥処理部とが一体
のリンス・乾燥処理装置により構成されており、リンス
・乾燥処理装置は、リンス槽の上方空間を密閉チャンバ
により閉鎖的に包囲して構成されていて、リンス・乾燥
処理装置では、リンス槽内に収容された純水中に浸漬さ
れて最終的にリンス処理された基板は、リンス槽内の純
水中から引き上げられ、そのまま密閉チャンバ内におい
て、その密閉チャンバ内に有機溶剤の蒸気が供給され密
閉チャンバ内部が減圧されることにより、或いは、密閉
チャンバ内に過熱蒸気が供給されることにより、乾燥処
理される。従って、最終リンス処理が終わってから乾燥
処理が終了するまでの間、基板は大気に全く触れること
がなく、基板表面へのパーティクル付着やガス吸着は起
こらない。
The substrate surface treatment apparatus having the above-described structure is provided with a final rinsing unit for finally rinsing the substrate after chemical cleaning (after further cleaning with pure water as necessary) and a final rinse-treated substrate. The drying processing unit for drying the surface of the rinsing / drying processing device is configured integrally, and the rinsing / drying processing device is configured by enveloping the upper space of the rinsing tank in a closed chamber in a closed manner, In the rinsing / drying processing device, the substrate that has been finally rinsed by being immersed in the pure water stored in the rinse tank is lifted from the pure water in the rinse tank, and then sealed in the sealed chamber as it is. The organic solvent vapor is supplied into the chamber to reduce the pressure inside the closed chamber, or the superheated vapor is supplied into the closed chamber to perform the drying process. Therefore, from the end of the final rinsing process to the end of the drying process, the substrate does not come into contact with the atmosphere at all, and particle adhesion and gas adsorption do not occur on the substrate surface.

【0009】[0009]

【実施例】以下、この発明の好適な実施例について図面
を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は、この発明の1実施例に係る基板の
洗浄装置の概略構成を示す正面断面図であり、図2は、
この洗浄装置の構成の概略平面レイアウト図である。こ
の洗浄装置は、ローダ10、洗浄・乾燥処理部12、アンロ
ーダ14、基板搬送ロボット16及びカセットトラック(図
1には図示せず)を備えて構成されている。洗浄・乾燥
処理部12は、3つの薬液洗浄槽18、20、22、3つの純水
洗浄槽24、26、28及びリンス・乾燥処理装置30を、各薬
液洗浄槽18、20、22の後方に隣接して各純水洗浄槽24、
26、28がそれぞれ配置され第3番目の純水洗浄槽28に隣
接してリンス・乾燥処理装置30が配置されるように、一
列に連設して構成されている。そして、例えば、第1番
目の薬液洗浄槽18にはアンモニア水及び過酸化水素水の
混合溶液が収容され、第2番目の薬液洗浄槽20にはフッ
酸が収容され、第3番目の薬液洗浄槽22には塩酸及び過
酸化水素水の混合溶液が収容されており、また、各純水
洗浄槽24、26、28には純水がそれぞれ収容されている。
また、ローダ10には、カセットCに収容されて搬入され
てきた洗浄前の複数枚の基板Wを、ローダ10に載置され
たカセットCから基板搬送ロボット16へ受け渡す基板受
渡し装置32が設けられており、アンローダ14には、洗浄
・乾燥処理部12での処理を終えた複数枚の基板Wを基板
搬送ロボット16から空のカセットCへ受け渡す基板受渡
し装置34が設けられている。
FIG. 1 is a front sectional view showing a schematic structure of a substrate cleaning apparatus according to an embodiment of the present invention, and FIG.
It is a schematic plan layout view of a configuration of this cleaning device. This cleaning apparatus comprises a loader 10, a cleaning / drying processing unit 12, an unloader 14, a substrate transfer robot 16 and a cassette track (not shown in FIG. 1). The cleaning / drying processing unit 12 includes three chemical cleaning tanks 18, 20, 22 and three pure water cleaning tanks 24, 26, 28 and a rinsing / drying processing device 30 behind each chemical cleaning tank 18, 20, 22. Adjacent to each pure water cleaning tank 24,
26 and 28 are arranged respectively, and a rinse / drying treatment device 30 is arranged adjacent to the third deionized water cleaning tank 28 so as to be arranged in series. Then, for example, the first chemical cleaning tank 18 stores a mixed solution of ammonia water and hydrogen peroxide water, the second chemical cleaning tank 20 stores hydrofluoric acid, and the third chemical cleaning tank The tank 22 stores a mixed solution of hydrochloric acid and hydrogen peroxide water, and the pure water cleaning tanks 24, 26, and 28 store pure water, respectively.
In addition, the loader 10 is provided with a substrate transfer device 32 that transfers a plurality of pre-cleaned substrates W, which are accommodated and loaded in the cassette C, from the cassette C mounted on the loader 10 to the substrate transfer robot 16. The unloader 14 is provided with a substrate transfer device 34 that transfers a plurality of substrates W that have been processed by the cleaning / drying processing unit 12 from the substrate transfer robot 16 to an empty cassette C.

【0011】リンス・乾燥処理装置30は、リンス槽36及
びこのリンス槽36の上部外周に設けられた溢流水受け部
38を有しており、それらの上方空間を閉鎖的に包囲する
ように、密閉可能な開閉蓋42を有する密閉チャンバ40を
備えている。リンス槽36には、その底部に純水供給口が
形設されており、純水供給源からその純水供給口を通し
て常時リンス槽36内へ純水44が供給され、一方、リンス
槽36の上部は越流部となっており、その越流部より溢れ
出た純水が溢流水受け部38に常時流れ込むようになって
いて、リンス槽36の内部において純水44の上昇水流が形
成される。溢流水受け部38に流れ込んだ純水は、溢流水
受け部38に形設された純水排出口を通して排水される。
また、密閉チャンバ40には、有機溶剤の蒸気、例えばイ
ソプロピルアルコールの蒸気を密閉チャンバ40内へ供給
するための蒸気供給口が形設されており、蒸気供給口は
蒸気供給用管路を介してアルコール蒸気供給源に流路接
続されている。尚、図示していないが、蒸気供給用管路
は窒素供給源に流路接続されており、窒素ガスをキャリ
ヤガスとしてアルコール蒸気が密閉チャンバ40内へ送給
されるとともに、流路の切換えにより蒸気供給用管路を
通して窒素ガスだけを密閉チャンバ40内へ送り込んで密
閉チャンバ40の内部をパージすることができる構成とな
っている。さらに、密閉チャンバ40には、排気口が形設
されており、排気口は排気手段、例えば水封式真空ポン
プに流路接続されていて、その排気口を通して密閉チャ
ンバ40内を真空ポンプで排気することにより、密閉チャ
ンバ40内を減圧することができる。また、図示を省略し
ているが、密閉チャンバ40の内部には、基板Wを昇降さ
せる基板昇降機構が設けられており、この基板昇降機構
により、基板をリンス槽36の上方位置とリンス槽36内部
位置との間で昇降移動させることができるようになって
いる。
The rinsing / drying processing apparatus 30 comprises a rinse tank 36 and an overflow water receiving portion provided on the outer periphery of the upper portion of the rinse tank 36.
It has a closed chamber 40 having an openable and closable lid 42 so as to surround the upper space thereof in a closed manner. The rinse tank 36 has a pure water supply port formed at the bottom thereof, and pure water 44 is constantly supplied from the pure water supply source into the rinse tank 36 through the pure water supply port. The upper part is an overflow part, and the pure water overflowing from the overflow part is constantly allowed to flow into the overflow water receiving part 38, and a rising water flow of pure water 44 is formed inside the rinse tank 36. It The pure water flowing into the overflow water receiving portion 38 is drained through a pure water discharge port formed in the overflow water receiving portion 38.
Further, in the closed chamber 40, a vapor supply port for supplying the vapor of an organic solvent, for example, isopropyl alcohol vapor into the closed chamber 40 is formed, and the vapor supply port is provided through a vapor supply pipeline. A flow path is connected to the alcohol vapor supply source. Although not shown, the vapor supply pipeline is connected to a nitrogen supply source in a flow path, and alcohol vapor is fed into the closed chamber 40 using nitrogen gas as a carrier gas, and the flow path is switched. Only the nitrogen gas can be sent into the closed chamber 40 through the vapor supply pipe to purge the inside of the closed chamber 40. Further, an exhaust port is formed in the closed chamber 40, and the exhaust port is connected to an exhaust means, for example, a water-sealed vacuum pump in a flow path, and the closed chamber 40 is exhausted by a vacuum pump through the exhaust port. By doing so, the pressure inside the closed chamber 40 can be reduced. Although not shown, a substrate elevating mechanism for elevating and lowering the substrate W is provided inside the closed chamber 40. The substrate elevating mechanism raises the substrate to a position above the rinse tank 36 and the rinse tank 36. It can be moved up and down with respect to the internal position.

【0012】次に、上記した構成の基板の洗浄装置を使
用して基板の洗浄及び乾燥処理を行なう一連の工程につ
いて説明する。
Next, a series of steps for cleaning and drying the substrate using the substrate cleaning apparatus having the above-mentioned structure will be described.

【0013】洗浄前の複数枚の基板Wを収容したカセッ
トCがローダ10に搬入されて載置されると、基板受渡し
装置32によりカセットCから基板搬送ロボット16へ複数
枚の基板Wが一括して受け渡され、次いで、基板搬送ロ
ボット16により複数枚の基板Wが一括して第1番目の薬
液洗浄槽18内へ送入されて、薬液洗浄槽18内部の基板保
持具に保持される。薬液洗浄槽18内には所要の薬液が連
続して供給されるとともに、薬液洗浄槽18からオーバー
フローした薬液は循環使用されるようになっており、薬
液洗浄槽18内の薬液中に基板Wが浸漬されることによ
り、基板Wに対し所要の洗浄処理が行なわれる。薬液洗
浄槽18で洗浄処理された複数枚の基板Wは、再び基板搬
送ロボット16へ受け渡され、基板搬送ロボット16により
複数枚の基板Wが一括して第1番目の純水洗浄槽24内へ
送入されて、純水洗浄槽24内部の基板保持具に保持され
る。純水洗浄槽24内には純水が連続して供給されるとと
もに、純水洗浄槽24の上部から純水がオーバーフローし
ており、純水洗浄槽24内の純水の上昇水流中に基板Wが
置かれることにより、基板Wの表面が水洗される。同様
にして、基板搬送ロボット16により複数枚の基板Wを一
括して第2番目の薬液洗浄槽20、第2番目の純水洗浄槽
26、第3番目の薬液洗浄槽22、第3番目の純水洗浄槽28
へと順次搬送しながら、薬液による洗浄及び純水による
水洗を繰り返す。そして、第3番目の純水洗浄槽28での
水洗が終わった複数枚の基板Wは、基板搬送ロボット16
により一括してリンス・乾燥処理装置30へ搬送される。
When a cassette C accommodating a plurality of substrates W before cleaning is carried into the loader 10 and placed thereon, a plurality of substrates W are collectively transferred from the cassette C to the substrate transfer robot 16 by the substrate transfer device 32. Then, the substrate transfer robot 16 collectively feeds the plurality of substrates W into the first chemical cleaning tank 18 and holds them in the substrate holder inside the chemical cleaning tank 18. A required chemical solution is continuously supplied into the chemical solution cleaning tank 18, and the chemical solution overflowing from the chemical solution cleaning tank 18 is circulated and used, and the substrate W is contained in the chemical solution in the chemical solution cleaning tank 18. The substrate W is subjected to a required cleaning process by being immersed. The plurality of substrates W cleaned in the chemical cleaning tank 18 are transferred to the substrate transfer robot 16 again, and the plurality of substrates W are collectively transferred by the substrate transfer robot 16 in the first pure water cleaning tank 24. And is held by the substrate holder inside the pure water cleaning tank 24. Pure water is continuously supplied to the pure water cleaning tank 24, and the pure water overflows from the upper portion of the pure water cleaning tank 24. When W is placed, the surface of the substrate W is washed with water. Similarly, the substrate transfer robot 16 collectively collects a plurality of substrates W into a second chemical cleaning tank 20 and a second pure water cleaning tank.
26, third chemical cleaning tank 22, third pure water cleaning tank 28
The cleaning with the chemical solution and the rinsing with pure water are repeated while sequentially transferring to. Then, the plurality of substrates W that have been washed with water in the third deionized water washing tank 28 are transferred to the substrate transfer robot 16
Are collectively transported to the rinsing / drying processing device 30.

【0014】リンス・乾燥処理装置30の密閉チャンバ40
内に複数枚の基板Wが一括して搬入され、基板昇降機構
によって昇降自在に支持された基板保持具へ複数枚の基
板Wが一括して受け渡されると、開閉蓋42が閉塞されて
密閉チャンバ40内が密閉される。このとき、リンス槽36
内には、その底部の純水供給口を通して純水供給源から
純水44が連続して供給され、リンス槽36内部を満たした
純水44は、その上部の越流部から溢れ出て溢流水受け部
38内へ流入し、溢流水受け部38から純水排出口を通して
排水されており、リンス槽36の内部に純水44の上昇水流
が形成されている。複数枚の基板Wが一括して基板保持
具に保持されると、基板昇降機構を作動させて、基板W
を下降させ、リンス槽36内の純水44中に基板Wを浸漬さ
せ、純水44の上昇水流中に基板Wを所定時間置くことに
より基板Wを最終的にリンス処理する。これにより、基
板Wの表面が完全に清浄化される。基板Wの最終リンス
処理が終了すると、基板昇降機構を作動させて、基板保
持具に保持された基板Wを上昇させ、基板Wをリンス槽
36内の純水44中から引き上げる。そして、純水44中から
基板Wを引き上げ始めるのと同時に、蒸気供給用管路を
通して密閉チャンバ40内へ蒸気供給口からアルコール蒸
気を送り込んで、純水44中から引き上げられている途中
の基板Wの周囲へアルコール蒸気を供給する。このアル
コール蒸気の供給は、少なくとも純水44中からの基板W
の引上げが完全に終了するまで行なう。純水44中からの
基板Wの引上げが終了すると、リンス槽36への純水の供
給を停止させ、同時に、リンス槽36内の純水を排出す
る。また、リンス槽36から純水を排出し始めるのと同時
に、水封式真空ポンプを作動させて密閉チャンバ40内を
真空排気し、密閉チャンバ40内を減圧状態にすることに
より、基板Wの表面に凝縮して純水と置換したアルコー
ルを蒸発させて基板Wを乾燥させる。
A closed chamber 40 of the rinse / drying processing apparatus 30.
When a plurality of substrates W are collectively loaded into the substrate W, and the plurality of substrates W are collectively delivered to the substrate holder that is supported by the substrate elevating / lowering mechanism, the opening / closing lid 42 is closed and hermetically sealed. The inside of the chamber 40 is sealed. At this time, rinse tank 36
Pure water 44 is continuously supplied from the pure water supply source through the pure water supply port at the bottom thereof, and the pure water 44 filling the inside of the rinse tank 36 overflows from the overflow portion at the upper part thereof. Running water receiver
It flows into the inside 38 and is drained from the overflow water receiving part 38 through the pure water discharge port, and the rising water flow of the pure water 44 is formed inside the rinse tank 36. When the plurality of substrates W are collectively held by the substrate holder, the substrate elevating mechanism is operated to operate the substrates W.
The substrate W is finally rinsed by immersing the substrate W in the pure water 44 in the rinse tank 36 and placing the substrate W in the rising water flow of the pure water 44 for a predetermined time. As a result, the surface of the substrate W is completely cleaned. When the final rinsing process of the substrate W is completed, the substrate elevating mechanism is operated to raise the substrate W held by the substrate holder, and the substrate W is rinsed.
Pull up from pure water 44 in 36. Then, at the same time when the substrate W is pulled up from the pure water 44, alcohol vapor is fed from the vapor supply port into the closed chamber 40 through the vapor supply pipe line, and the substrate W being pulled up from the pure water 44 is in process. Supply alcohol vapor to the surroundings. The alcohol vapor is supplied at least from the substrate W from pure water 44.
Until the complete lifting of. When the pulling up of the substrate W from the pure water 44 is completed, the supply of pure water to the rinse tank 36 is stopped, and at the same time, the pure water in the rinse tank 36 is discharged. Further, at the same time when the deionized water is started to be discharged from the rinse tank 36, the water-sealed vacuum pump is operated to evacuate the closed chamber 40 to reduce the pressure in the closed chamber 40. The substrate W is dried by evaporating the alcohol which has been condensed and replaced with pure water.

【0015】基板Wの乾燥処理が終了すると、密閉チャ
ンバ40内が窒素ガスによってパージされ、真空ポンプを
停止させて密閉チャンバ40内が減圧下から大気圧下へ戻
された後、開閉蓋42が開放され、最終リンス処理及び乾
燥処理が終了した基板Wは、一括して基板保持具から再
び基板搬送ロボット16へ受け渡され、基板搬送ロボット
16により密閉チャンバ40外へ取り出される。そして、洗
浄・乾燥処理を終えた複数枚の基板Wは、基板受渡し装
置34により基板搬送ロボット16から空のカセットCへ受
け渡され、カセットCに収容されてアンローダ14から搬
出される。
When the drying process of the substrate W is completed, the inside of the closed chamber 40 is purged with nitrogen gas, the vacuum pump is stopped, and the inside of the closed chamber 40 is returned from the reduced pressure to the atmospheric pressure. The substrates W that have been released and have been subjected to the final rinsing process and the drying process are collectively passed again from the substrate holder to the substrate transfer robot 16, and the substrate transfer robot 16
It is taken out of the closed chamber 40 by 16. Then, the plurality of substrates W that have undergone the cleaning / drying process are transferred from the substrate transfer robot 16 to the empty cassette C by the substrate transfer device 34, housed in the cassette C, and unloaded from the unloader 14.

【0016】以上のように、図1に示した基板の洗浄装
置では、薬液洗浄及び水洗された基板Wを最終的にリン
ス処理してから乾燥処理が終了するまでの間、基板W
は、密閉された密閉チャンバ40内において処理され、大
気に全く触れることがないので、その間に基板Wの表面
にパーティクルが付着したり炭酸ガス、酸素等のガスが
吸着したりすることがない。
As described above, in the substrate cleaning apparatus shown in FIG. 1, the substrate W that has been rinsed with the chemical solution and water is finally rinsed until the drying process is completed.
Is processed in the closed chamber 40, which is closed, and does not come into contact with the atmosphere at all, so that particles are not attached to the surface of the substrate W or gases such as carbon dioxide gas and oxygen are not adsorbed during that time.

【0017】図1に示したような構成のリンス・乾燥処
理装置30に代えて、図3に示すような構成のリンス・乾
燥処理装置を設置して基板の洗浄装置を構成してもよ
い。図3に示したリンス・乾燥処理装置46は、図1に示
したリンス・乾燥処理装置30と同様に、リンス槽48、溢
流水受け部50、密閉可能な開閉蓋54を有する密閉チャン
バ52、及び、基板Wを昇降させる基板昇降機構(図示せ
ず)を備えている。そして、このリンス・乾燥処理装置
46では、密閉チャンバ52の一側面に、過熱蒸気60を均一
に分散させてリンス槽48の上方空間へ水平方向に吹き出
す過熱蒸気吹出し部56が配設されているとともに、密閉
チャンバ52の、過熱蒸気吹出し部56と対向する側面に、
過熱蒸気吹出し部56から吹き出された過熱蒸気60を吸引
する過熱蒸気吸引部58が配設されている。過熱蒸気吹出
し部56は、過熱蒸気供給源に流路接続されており、過熱
蒸気供給源から過熱蒸気吹出し部56へ過熱蒸気が送給さ
れ、過熱蒸気吹出し部56から、例えば135〜150℃
程度の温度の過熱蒸気60が吹き出すようになっている。
尚、過熱蒸気吸引部58の排気口に真空ポンプを流路接続
し、過熱蒸気吸引部58を通して密閉チャンバ52内を真空
排気して減圧することができるようにしてもよい。
Instead of the rinsing / drying processing apparatus 30 having the structure shown in FIG. 1, a rinsing / drying processing apparatus having the structure shown in FIG. 3 may be installed to form a substrate cleaning apparatus. The rinsing / drying processing apparatus 46 shown in FIG. 3 is, like the rinsing / drying processing apparatus 30 shown in FIG. 1, a rinsing tank 48, an overflow water receiving section 50, and a closed chamber 52 having an openable / closable lid 54. And a substrate elevating mechanism (not shown) for elevating the substrate W. And this rinsing and drying equipment
In 46, on one side of the closed chamber 52, a superheated steam blowing section 56 for uniformly dispersing the superheated steam 60 and horizontally blowing it to the upper space of the rinse tank 48 is provided, and the overheated steam of the closed chamber 52 is overheated. On the side surface facing the steam outlet 56,
An overheated steam suction unit 58 for sucking the overheated steam 60 blown out from the overheated steam blowing unit 56 is provided. The superheated steam blowing unit 56 is connected to the superheated steam supply source by a flow path, the superheated steam is fed from the superheated steam supply source to the superheated steam blowing unit 56, and from the superheated steam blowing unit 56, for example, 135 to 150 ° C.
The superheated steam 60 of about the temperature is blown out.
A vacuum pump may be connected to the exhaust port of the superheated vapor suction unit 58 so that the closed chamber 52 can be evacuated to reduce the pressure through the superheated vapor suction unit 58.

【0018】図3に示したようなリンス・乾燥処理装置
46では、リンス槽48内の純水44中から引き上げられた基
板Wに対して過熱蒸気60が供給されると、基板Wの表面
温度が次第に上昇するとともに、基板Wの表面で過熱蒸
気60が冷却されて結露し、基板Wの表面全体が水で覆わ
れた状態になる。そして、基板Wの表面温度が、過熱蒸
気60の温度付近まで上昇し基板W表面上での水分凝縮が
少なくなる程度にまで昇温した時に、基板W表面への過
熱蒸気60の供給を停止すると、基板Wの表面は加熱され
て高い温度になっているため、基板Wの表面全体から付
着水分が速やかに蒸発してしまう。このように、基板W
の表面全体が濡れたままの状態で基板Wの温度を高く
し、基板Wの表面温度が高くなった時点で、一気に付着
水分を蒸発させることにより、基板Wの表面が乾燥させ
られることになる。そして、図3に示したリンス・乾燥
処理装置46を備えた基板の洗浄装置においても、薬液洗
浄及び水洗された基板Wは、最終的にリンス処理されて
から乾燥が完了するまでの間、密閉された密閉チャンバ
52内において処理され、大気に全く触れることがないの
で、その間に基板Wの表面へのパーティクル付着やガス
吸着が起こったりすることがない。
Rinsing / drying apparatus as shown in FIG.
In 46, when the superheated steam 60 is supplied to the substrate W pulled up from the pure water 44 in the rinse tank 48, the surface temperature of the substrate W gradually rises and the superheated steam 60 is generated on the surface of the substrate W. It is cooled and condensed, and the entire surface of the substrate W is covered with water. Then, when the surface temperature of the substrate W rises to the vicinity of the temperature of the superheated steam 60 and rises to such an extent that water condensation on the surface of the substrate W is reduced, the supply of the superheated steam 60 to the surface of the substrate W is stopped Since the surface of the substrate W is heated to a high temperature, the attached water quickly evaporates from the entire surface of the substrate W. Thus, the substrate W
The surface of the substrate W is dried by raising the temperature of the substrate W in a state where the entire surface of the substrate W remains wet, and evaporating the attached water all at once when the surface temperature of the substrate W becomes high. . In the substrate cleaning apparatus including the rinsing / drying processing apparatus 46 shown in FIG. 3, the substrate W that has been chemically and water rinsed is hermetically sealed from the final rinse processing to the completion of drying. Closed chamber
Since it is processed in 52 and is not exposed to the atmosphere at all, there is no particle adhesion or gas adsorption to the surface of the substrate W in the meantime.

【0019】[0019]

【発明の効果】この発明は以上説明したように構成され
かつ作用するので、この発明に係る基板の表面処理装置
を使用したときは、最終リンス処理が終わってから乾燥
処理が終了するまでの間、基板は大気に触れることがな
く、基板表面へのパーティクル付着やガス吸着が起こら
ないため、膜汚染による歩留りの低下を防ぐことができ
る。また、この発明に係る基板の洗浄装置は、最終リン
ス処理部と乾燥処理部とが一体のリンス・乾燥処理装置
により構成されているため、省スペース化が図られる。
Since the present invention is constructed and operates as described above, when the substrate surface treatment apparatus according to the present invention is used, the time from the end of the final rinsing treatment to the end of the drying treatment. Since the substrate does not come into contact with the atmosphere and particles do not adhere to the surface of the substrate or gas adsorption does not occur, it is possible to prevent the yield from decreasing due to film contamination. Further, in the substrate cleaning apparatus according to the present invention, the final rinsing processing section and the drying processing section are constituted by an integrated rinsing / drying processing apparatus, so that the space can be saved.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の1実施例に係る基板の洗浄装置の概
略構成を示す正面断面図である。
FIG. 1 is a front sectional view showing a schematic configuration of a substrate cleaning apparatus according to an embodiment of the present invention.

【図2】図1に示した基板の洗浄装置の構成の概略平面
レイアウト図である。
FIG. 2 is a schematic plan layout diagram of the configuration of the substrate cleaning apparatus shown in FIG.

【図3】この発明に係る基板の洗浄装置に設置されるリ
ンス・乾燥処理装置の別の構成例を示す正面断面図であ
る。
FIG. 3 is a front sectional view showing another configuration example of the rinse / drying processing apparatus installed in the substrate cleaning apparatus according to the present invention.

【図4】従来の基板の洗浄装置の構成の1例を示す概略
平面レイアウト図である。
FIG. 4 is a schematic plan layout diagram showing an example of a configuration of a conventional substrate cleaning apparatus.

【図5】最終リンス処理部に有機溶剤蒸気乾燥処理部が
隣接して配設された従来の洗浄装置の一部を示す概略断
面図である。
FIG. 5 is a schematic cross-sectional view showing a part of a conventional cleaning device in which an organic solvent vapor drying treatment unit is disposed adjacent to a final rinsing treatment unit.

【符号の説明】[Explanation of symbols]

10 ローダ 12 洗浄・乾燥処理部 14 アンローダ 16 基板搬送ロボット 18、20、22 薬液洗浄槽 24、26、28 純水洗浄槽 30、46 リンス・乾燥処理装置 36、48 リンス槽 38、50 溢流水受け部 40、52 密閉チャンバ 42、54 開閉蓋 44 純水 10 Loader 12 Cleaning / drying processing unit 14 Unloader 16 Substrate transfer robot 18, 20, 22 Chemical cleaning tank 24, 26, 28 Pure water cleaning tank 30, 46 Rinse / drying processing device 36, 48 Rinse tank 38, 50 Overflow water receiver Part 40, 52 Closed chamber 42, 54 Open / close lid 44 Pure water

───────────────────────────────────────────────────── フロントページの続き (72)発明者 村岡 祐介 京都市伏見区羽束師古川町322番地 大日 本スクリーン製造株式会社洛西工場内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yusuke Muraoka 322, Fukumi-ku, Fushimi-ku, Kyoto, Furukawa-cho, Dainichi Screen Manufacturing Co., Ltd. Rakusai Factory

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 所要の洗浄用薬液を収容し、その薬液中
に基板を浸漬させることにより所要の洗浄処理を行な
う、少なくとも1つの薬液洗浄槽と、 この薬液洗浄槽で洗浄処理され必要に応じて純水で洗浄
処理された基板の表面に純水を供給し、基板を最終的に
リンス処理する最終リンス処理部と、 この最終リンス処理部で最終的にリンス処理された基板
の表面を乾燥させる乾燥処理部と、 装置内での基板の搬送を行なう基板搬送ロボットとを備
えてなる基板の表面処理装置において、 前記最終リンス処理部と前記乾燥処理部とを、 純水を供給するための純水供給口を底部に有するととも
に純水を越流させるための越流部を上部に有し、内部に
純水を収容してその純水中に基板が浸漬されるようにす
るリンス槽と、 このリンス槽内へ前記純水供給口を通して常時純水を供
給する純水供給手段と、前記リンス槽の前記越流部より
溢れ出た純水が流れ込む溢流水受け部と、 この溢流水受け部から純水を排出する排水手段と、 前記リンス槽の上方位置とリンス槽内部位置との間で基
板を昇降移動させる基板昇降手段と、 有機溶剤の蒸気を供給するための蒸気供給口を有し、前
記リンス槽及び前記溢流水受け部の上方空間を閉鎖的に
包囲する密閉チャンバと、 この密閉チャンバ内を排気して減圧する排気手段と、 前記密閉チャンバ内へ蒸気供給口を通して有機溶剤の蒸
気を供給する蒸気供給手段とを備えた一体のリンス・乾
燥処理装置により構成したことを特徴とする基板の表面
処理装置。
1. At least one chemical cleaning tank for containing a required cleaning chemical solution and performing a required cleaning treatment by immersing a substrate in the chemical solution, and a cleaning treatment in this chemical cleaning tank if necessary. Water is supplied to the surface of the substrate that has been washed with pure water to finally rinse the substrate, and the surface of the substrate that has been finally rinsed in this final rinse processing unit is dried. In a substrate surface treatment apparatus comprising a drying treatment section for performing the treatment and a substrate conveyance robot for conveying the substrate in the apparatus, the final rinsing treatment section and the drying treatment section are provided for supplying pure water. A rinse tank having a pure water supply port at the bottom and an overflow part at the top for overflowing the pure water, and containing pure water inside so that the substrate is immersed in the pure water. , The pure water into the rinse tank Pure water supply means for constantly supplying pure water through the supply port, overflow water receiving portion into which pure water overflowing from the overflow portion of the rinse tank flows, and drainage means for discharging pure water from the overflow water receiving portion A substrate elevating means for elevating and lowering the substrate between an upper position of the rinse tank and an inner position of the rinse tank, and a vapor supply port for supplying vapor of an organic solvent, the rinse tank and the overflow water. A closed chamber that close-closes the space above the receiving portion, an exhaust unit that exhausts the inside of the closed chamber to reduce the pressure, and a vapor supply unit that supplies the vapor of the organic solvent through the vapor supply port into the closed chamber. A substrate surface treatment apparatus comprising an integrated rinse / drying treatment apparatus.
【請求項2】 所要の洗浄用薬液を収容し、その薬液中
に基板を浸漬させることにより所要の洗浄処理を行な
う、少なくとも1つの薬液洗浄槽と、 この薬液洗浄槽で洗浄処理され必要に応じて純水で洗浄
処理された基板の表面に純水を供給し、基板を最終的に
リンス処理する最終リンス処理部と、 この最終リンス処理部で最終的にリンス処理された基板
の表面を乾燥させる乾燥処理部と、 装置内での基板の搬送を行なう基板搬送ロボットとを備
えてなる基板の表面処理装置において、 前記最終リンス処理部と前記乾燥処理部とを、 純水を供給するための純水供給口を底部に有するととも
に純水を越流させるための越流部を上部に有し、内部に
純水を収容してその純水中に基板が浸漬されるようにす
るリンス槽と、 このリンス槽内へ前記純水供給口を通して常時純水を供
給する純水供給手段と、 前記リンス槽の前記越流部より溢れ出た純水が流れ込む
溢流水受け部と、 この溢流水受け部から純水を排出する排水手段と、 前記リンス槽の上方位置とリンス槽内部位置との間で基
板を昇降移動させる基板昇降手段と、 過熱蒸気を均一に分散させて前記リンス槽の上方空間へ
水平方向に吹き出す過熱蒸気吹出し部、及び、リンス槽
の上方空間を介在させて前記過熱蒸気吹出し部の反対側
に配設され過熱蒸気吹出し部から吹き出された過熱蒸気
を吸引する過熱蒸気吸引部を有し、前記リンス槽及び前
記溢流水受け部の上方空間を閉鎖的に包囲する密閉チャ
ンバと、 この密閉チャンバの前記過熱蒸気吹出し部へ過熱蒸気を
供給する過熱蒸気供給手段とを備えた一体のリンス・乾
燥処理装置により構成したことを特徴とする基板の表面
処理装置。
2. At least one chemical cleaning tank for containing a required cleaning chemical and performing a required cleaning treatment by immersing a substrate in the chemical, and a cleaning treatment in this chemical cleaning tank as needed. Water is supplied to the surface of the substrate that has been washed with pure water to finally rinse the substrate, and the surface of the substrate that has been finally rinsed in this final rinse processing unit is dried. In a substrate surface treatment apparatus comprising a drying treatment section for performing the treatment and a substrate conveyance robot for conveying the substrate in the apparatus, the final rinsing treatment section and the drying treatment section are provided for supplying pure water. A rinse tank having a pure water supply port at the bottom and an overflow part at the top for overflowing the pure water, and containing pure water inside so that the substrate is immersed in the pure water. , The pure water into the rinse tank Pure water supply means for constantly supplying pure water through the supply port, overflow water receiving portion into which pure water overflowing from the overflow portion of the rinse tank flows, and drainage means for discharging pure water from the overflow water receiving portion A substrate elevating means for elevating and lowering the substrate between an upper position of the rinse tank and an inner position of the rinse tank; and an overheated steam blowing section for uniformly dispersing the overheated steam and blowing it horizontally to a space above the rinse tank. , And, having a superheated steam suction unit for interposing an upper space of the rinse tank and sucking the superheated steam blown out from the superheated steam blowout unit, which is arranged on the opposite side of the superheated steam blowout unit, the rinse tank and the above An integrated rinsing / drying treatment apparatus including a closed chamber that encloses the space above the overflow water receiving part in a closed manner, and superheated steam supply means for supplying superheated steam to the superheated steam blowing part of the closed chamber. Surface treatment apparatus of the substrate, characterized in that a more configurations.
JP29476693A 1993-10-29 1993-10-29 Substrate surface treatment equipment Expired - Lifetime JP3126859B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29476693A JP3126859B2 (en) 1993-10-29 1993-10-29 Substrate surface treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29476693A JP3126859B2 (en) 1993-10-29 1993-10-29 Substrate surface treatment equipment

Publications (2)

Publication Number Publication Date
JPH07130698A true JPH07130698A (en) 1995-05-19
JP3126859B2 JP3126859B2 (en) 2001-01-22

Family

ID=17812027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29476693A Expired - Lifetime JP3126859B2 (en) 1993-10-29 1993-10-29 Substrate surface treatment equipment

Country Status (1)

Country Link
JP (1) JP3126859B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101153540B1 (en) * 2009-06-26 2012-06-11 삼성전기주식회사 Substrate treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101153540B1 (en) * 2009-06-26 2012-06-11 삼성전기주식회사 Substrate treating apparatus

Also Published As

Publication number Publication date
JP3126859B2 (en) 2001-01-22

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