JPH07126851A - Cvd apparatus - Google Patents

Abstract

PURPOSE:To enhance the efficiency of transporting atomized raw material and is capable of stably forming films even under a low pressure by atomizing the liquid raw material in a reaction vessel. CONSTITUTION:A fixed delivery pump 14 for liquid, an upper capillary 11a and a lower capillary 11b supply the prescribed volume of the liquid raw material into the reaction vessel 3. The liquid raw material is atomized by an upper nebulizer 6a and a lower nebulizer 6b and is injected toward a polyester film 24 which is a base material. Only either one of the upper and lower nebulizers 6a, 6b is driven and the other is stopped at the time of film formation. An ultrasonic vibrator is usable as well in order to accelerate atomization. As a result, the CVD device which enhances the efficiency of transporting the atomized raw material and is capable of stably forming the films even under the low pressure is obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus for atomizing a liquid raw material to deposit a thin film, and in particular, by atomizing the liquid raw material in a reaction vessel, the transport efficiency of the atomized raw material is improved. The present invention relates to a CVD apparatus capable of stably forming a film even under a low pressure by increasing the temperature.

[0002]

2. Description of the Related Art Generally, low pressure plasma CVD (low pressure plasma chemical vapor deposition) is a technique for depositing a thin film on the surface of a substrate by using plasma energy. The raw material supplied to the base material is mainly a gas raw material that can obtain a high vapor pressure at room temperature,
The type of thin film to be deposited is metal, corresponding to the type of gas source,
It covers a wide range, such as glass, ceramics, and organic substances.

On the other hand, in CVD using a liquid material, a technique of depositing an interlayer insulating film of an integrated circuit or a SiOx film for a passivation film by using tetraethoxysilane (hereinafter referred to as TEOS) or tetramethyldisiloxane (TMDSO). Is developing.

Further, an organometallic complex such as a metal compound having a dipivaloyl group, such as Y (DPM) ₃ or Cu (DP)
A method for forming a high temperature superconducting thin film using a DPM raw material such as M) ₂ has been proposed. Such liquid raw materials are expected to have a wider range of applications in the future because of their high deposition rate, good step coverage, and low toxicity of the raw materials themselves.

For the supply of the liquid raw material, a simple vaporization supply method, a bubbling method or a paper riser method can be appropriately used. Here, the simple vaporization supply method is a technology for supplying the raw material by controlling the raw material vapor pressure by arranging the raw material supply system and the entire supply pipe in a constant temperature tank, and the bubbling method is a carrier-based technique for the simple vaporization supply method. This is a technique for supplying a raw material by imparting a gas bubbling effect and obtaining a uniform raw material saturated vapor in a bubbler inner space. Further, the paper riser method is a technique in which a mass flow controller or a metering pump and a heater are used to forcibly vaporize and supply only a raw material at a required flow rate.

However, these supply techniques have a problem that the supply amount of the raw material is affected by the vapor pressure of the raw material as the liquid raw material is vaporized and supplied.

In the case of supplying a multi-component liquid raw material, the raw material supply composition is unstable because it is affected by the difference in vapor pressure rather than the mixing ratio, which makes control difficult. For ease of control, it is sufficient to provide a feeder for each component and control each feeder individually to adjust the supply amount, but for a raw material that does not have a high vapor pressure like a gas raw material. Makes it impossible to use a flow rate measuring device such as a mass flow controller. In addition, it is practically impossible to supply even raw materials having a very low vapor pressure.

In order to solve this problem, recently, as a new attempt, introduction of an atomizing device (hereinafter referred to as a nebulizer) for atomizing and supplying a liquid raw material has been studied.

In this nebulizer, since the liquid raw material is atomized and supplied, the raw material supply amount is not affected by the raw material vapor pressure, so that the multi-component raw material composition can be easily controlled. Therefore, lead zirconate titanate (P) having various properties such as dielectric properties, piezoelectric properties, pyroelectric properties, and translucency properties is used in thin film formation by nebulizer liquid atomization supply.
It is expected to be applied in the field of producing multi-component electronic ceramic materials such as ZT (lead-zirconate-titanate) and barium titanate.

Two types of nebulizers of this type have been proposed. One is a method of utilizing a capillary wave and a cavitation effect by ultrasonic oscillation using an ultrasonic oscillator. For example, JP-A-55-15545, JP-A-62-207870, and JP-A-3-11.
It is disclosed in Japanese Patent No. 2894.

The other is a method of atomizing a raw material by using a spray nozzle according to the principle of atomization, for example, JP-A-63-261700, JP-A-3-8330, and JP-A-3-126872. Japanese Patent Laid-Open No. 3-291
No. 382, Japanese Patent Application Laid-Open No. 4-371581, and Japanese Patent Application Laid-Open No. 5-819.

In this type of nebulizer type CVD apparatus,
The nebulizer described above atomizes the liquid raw material to deposit a film. Atmospheric pressure thermal CVD or low pressure plasma CVD can be applied as the film forming method, and the reaction pressure is about 10 Torr or more in any CVD. However,
Due to the heat resistance of the substrate, it is desirable to use low pressure plasma CVD capable of forming a film by a low temperature process. In addition,
In this plasma CVD, the reaction pressure is usually about 1 Torr or less, preferably 0.1 Torr or less.

On the other hand, the transport of atomized raw material depends on the pressure, particle size and flow rate. The floating time of the atomized material can balance buoyancy and gravity. In addition, the lower the pressure and the larger the particle size, the higher the gravity floating / sinking speed, so it is necessary to increase the flow rate of the carrier gas in order to increase the transport distance of the atomized raw material.

For example, a nebulizer using an ultrasonic oscillator of about 1 to 3 MHz has an average particle size of 5 μm and a minimum particle size of 0.1.
A nebulizer that produces atomized raw materials of about 8 μm and that uses a spray nozzle has a particle size that is one to two orders of magnitude larger than that. The atomized raw material having such a particle size is 10 Torr.
It is transported normally at the above pressure.

[0015]

However, in the plasma CVD apparatus using the above nebulizer,
At a low pressure of 1 Torr or less, there is a problem in that it is difficult to transport the atomized raw material having an average particle size of 5 μm and a minimum particle size of about 0.8 μm.

Further, since the atomized raw material that is not transported to the carrier gas stays in the raw material supply pipe and captures the atomized raw material that comes later, there is a problem that the transport efficiency is low and unstable.

On the other hand, in the vicinity of the nebulizer, the saturated vapor pressure of the liquid raw material is in equilibrium, and the atomized raw material does not evaporate and vaporize. Incidentally, an organic liquid raw material such as TEOS can be improved in transportation efficiency by providing a heating portion in the middle of the raw material supply pipe to vaporize the raw material. On the other hand, for example, a solid solution raw material such as a nitrate aqueous solution raw material used for forming a superconducting material, the raw material that is desolvated in the heating unit and is atomized stays in the raw material supply pipe, which improves the transport efficiency. It has become difficult.

Further, it may be possible to make the raw material supply pipe thick in order to prevent the atomized raw material and the atomized raw material from staying. However, since a thick raw material supply pipe transports excess raw material vapor to the reaction vessel to increase the pressure inside the reaction vessel, it is necessary to install a huge vacuum pump in the reaction vessel to maintain a low reaction pressure of 1 Torr or less. Therefore, there is a problem that is impractical.

The present invention has been made in consideration of the above situation, and by atomizing a liquid raw material in a reaction vessel,
An object of the present invention is to provide a CVD apparatus capable of increasing the transport efficiency of atomized raw material and stably forming a film even under a low pressure.

[0020]

The invention according to claim 1 supplies an atomized raw material into a reaction vessel, and the atomized raw material is placed in the reaction vessel to hold a substrate. In a CVD apparatus for forming a thin film on the base material by supplying it toward a base material holding base, a liquid raw material supply means for supplying a predetermined amount of liquid raw material into the reaction container, and the liquid raw material supply means. It is a CVD apparatus provided with atomization material injection means which atomizes the liquid material supplied and creates the atomization material, and injects the atomization material toward the base material.

The invention corresponding to claim 2 is a CVD apparatus in which the atomized raw material injection means is arranged in a vertical direction with respect to the substrate holding table.

Furthermore, the invention corresponding to claim 3 is the CVD apparatus according to claim 1 or claim 2, wherein the atomizing material injection means is ultrasonic vibration for atomizing the liquid material. It is a CVD apparatus equipped with a child.

[0023]

Therefore, in the invention corresponding to claim 1, the liquid raw material supply means supplies the predetermined amount of the liquid raw material into the reaction vessel and the atomized raw material injection means is provided by the atomized raw material injection means. The liquid raw material supplied from the liquid raw material supply means is atomized to create an atomized raw material, and the atomized raw material is sprayed toward the base material. Therefore, atomization of the liquid raw material is performed in the reaction vessel. By doing so, the transport efficiency of the atomized raw material can be increased and a film can be stably formed even under low pressure.

Further, in the invention corresponding to claim 2, since the atomizing material injection means is arranged in the vertical direction with respect to the base material holding base, in addition to the function of claim 1, by the effect of gravity, The transport efficiency of the atomized raw material can be further improved.

Further, in the invention corresponding to claim 3, the atomized raw material injection means of the invention corresponding to claim 1 or 2 is provided with an ultrasonic vibrator for atomizing the liquid raw material. Therefore, since the liquid raw material can be atomized to have a very small particle size, the transport efficiency can be further improved and the reaction pressure can be lowered, thereby lowering the temperature of the film formation process.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic diagram showing the structure of a CVD apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing the structure of a nebulizer applied to this CVD apparatus. This CVD apparatus has a container body 1 formed in a cylindrical shape,
Moreover, an upper flange 2a for sealing the upper part of the container body 1
Also, a vacuum reaction container 3 having a lower flange 2b for sealing the lower part of the container body 1 is provided. In addition, the subscript of a shows the component corresponding to the upper side, and the subscript of b shows the component corresponding to the lower side.

The vacuum reaction vessel 3 is connected to the vacuum pump 5 from the upper flange 2a through the upper vacuum valve 4a,
Moreover, it is connected to the vacuum pump 5 from the lower flange 2b through the lower vacuum valve 4b. This vacuum pump 5 uses a rotary pump, but in order to improve the exhaust speed,
In addition to rotary pumps, mechanical booster pumps,
An oil diffusion pump, a turbo molecular pump, or the like may be provided.

Further, the vacuum reaction container 3 has an upper flange 2
An upper nebulizer (atomizing material injection means) in the center of a
6a is attached, and a lower nebulizer (atomizing material injection means) 6b is attached to the central portion of the lower flange 2b. During film formation, only one of the upper and lower nebulizers 6a and 6b is driven and the other nebulizer is stopped.

In addition, the upper and lower nebulizers 6a, 6
As shown in FIG. 2, b has an ultrasonic oscillator 9 in which the piezoelectric ceramics 7 are sandwiched between metal electrodes 8, and the peripheral portion of the ultrasonic oscillator 9 is supported by an elastomer 10 which is an elastic body. With this, it is possible to attach to the upper and lower flanges 6a and 6b with an airtight structure. In addition, the ultrasonic transducer 9 is located inside the vacuum reaction container 1 to
It vibrates at an oscillation frequency of 1.75 MHz and has a function of instantly atomizing the liquid raw material supplied from the corresponding upper or lower capillaries 11a and 11b.

The upper capillary 11a is provided on the upper flange and is, for example, a stainless steel tube having an inner diameter of about 0.5 mm, and one end thereof is arranged in the vicinity of the ultrasonic transducer 9.
The other end portion is led out of the vacuum reaction container 3 through the upper feedthrough 12a provided in the upper flange 2a, and the upper raw material valve 13 provided outside the vacuum reaction container 3
It is connected to the liquid metering pump 14 via a.

The lower capillary 11b is constructed in the same manner as the upper capillary 11a. One end of the lower capillary 11b is arranged close to the ultrasonic transducer 9 and the other end is provided on the lower flange 2b. It is led out to the outside of the vacuum reaction container 3 through the through 12b, and is connected to the liquid metering pump 14 through the lower raw material valve 13b provided outside the vacuum reaction container 3.

Here, the upper and lower capillaries 11
The liquid supply pumps a, 11b and the liquid metering pump 14 constitute a liquid material supply means. In addition, the upper and lower capillaries 11a and 11b are wound with upper and lower sheath heaters 15a and 15b that are waterproofed to prevent the liquid raw material from being frozen due to latent heat of vaporization in the vacuum reaction vessel.

The liquid metering pump 14 is connected to a liquid raw material container 16 holding a liquid raw material, and supplies the liquid raw material in the liquid raw material container 16 to the upper or lower capillaries 11a and 11b at a flow rate of 1 ml per minute, for example. And here we are using a peristaltic pump. The liquid raw material container 16 is 0.5 m of a mixture obtained by mixing copper nitrate trihydrate, cupric chloride dihydrate and yttrium nitrate hexahydrate in a molar ratio of 5: 1: 1.
The ol / l aqueous solution is held as a liquid raw material.

On the other hand, in the vacuum reaction container 3, two capacitively-coupled plasma electrodes 17 formed in a ring shape are provided in parallel with each other at a predetermined interval in a substantially central portion of the container body 1. The electrode 17 is 1 via the matching circuit 18.
It is connected to a high frequency power supply 19 having a power supply frequency of 3.56 MHz and a high frequency power of maximum power of 1 kW.

Further, the vacuum reaction container 3 is provided with a reaction gas introduction port (not shown) for introducing oxygen as a reaction gas near each plasma electrode 17.

Further, the upper and lower flanges 2a, 2b of the vacuum reaction container 3 are provided with an O-ring seal portion 20a or 20b having an O-ring, and the O-ring seal portion 2 is provided.
The support 22 of the base material support 21 can be held by 0a and 20b. During film formation, the O-ring seal portion 20 of either the upper or lower flange 2a or 2b is formed.
The column 22 of the base material support 21 is held only by a or 20b, and the other O-ring seal portion 20b or 20a is closed.

The base material support base 21 has a support base body 23 whose lower portion is supported by the support column 22. The support base body 23 is formed in a disk shape having a diameter smaller than the inner diameter of the vacuum reaction container 3, and has a function of holding the polyester film 24 as a base material on which a thin film is formed. In addition, the base material support base 21 is one of the upper and lower nebulizers 6a and 6b.
It is held on a flange on the opposite side to the flange holding the driven nebulizer. That is, the driven nebulizer and the base material support 21 are arranged in the vertical direction so as to face each other.

Next, the operation of the CVD apparatus configured as described above will be described.

First, the liquid raw material atomized by the upper nebulizer 6a is placed under the polyester film 2 below.
The deposition down system for supplying the liquid raw material atomized by the lower nebulizer 6b to the upper polyester film 24 will be described.

In the case of the deposition down method, the support column 22 of the base material support 21 is held by the O-ring seal portion 20b of the lower flange 2b, and the polyester film 24 is placed on the support base body 23. Further, the upper vacuum valve 4a is closed and the lower vacuum valve 4b is opened so that the vacuum pump 5 evacuates the vacuum reaction container 3 from the lower flange 2b.

When the vacuum reaction container 3 reaches a predetermined degree of vacuum, 200 W of high frequency power is applied to each plasma electrode 17 and the ultrasonic vibrator 9 of the upper nebulizer 6a.
Is driven. Further, in the vacuum reaction container 3, oxygen is introduced from the reaction gas introduction port and the degree of vacuum becomes about 0.1 Torr.

At this time, the lower raw material valve 13b is closed and the upper raw material valve 13a is opened, and then the liquid metering pump 14 is driven. The liquid metering pump 14 supplies the liquid raw material in the liquid raw material container 16 to the upper capillary 11a at a rate of 1 ml per minute,
The upper capillary 11a supplies this liquid raw material to the ultrasonic transducer 9 of the upper nebulizer 6a.

The upper nebulizer 6a atomizes this liquid raw material at the moment when it touches the ultrasonic vibrator 9, and jets it toward the base material support 21 below.

The jetted liquid material is activated by generating a plasma reaction when passing between the plasma electrodes 17 in the center of the container body 1 and reaches the polyester film 24 arranged below the plasma electrodes 17. Along with this polyester film 24, a thin film of copper oxide Cu ₆ YO
_This produces _8-z Cl.

In such a thin film forming process, a film thickness of 1 μm could be obtained in a deposition time of 1 minute without damaging or deforming the polyester film 24 by heat.

Next, the case of increasing the deposition will be described.

First, the support 22 of the base material support 21 is shown in FIG.
As shown by the broken line, the polyester film 24 is held by the O-ring seal portion 20a of the upper flange 2a and the support base body 23. Further, the upper vacuum valve 4a is opened, the lower vacuum valve 4b is closed, and the vacuum pump 5 evacuates the vacuum reaction container 3 from the upper flange 2a.

When the vacuum reaction container 3 reaches a predetermined degree of vacuum, high-frequency power of 200 W is applied to each plasma electrode 17, and the ultrasonic vibrator 9 of the lower nebulizer 6b is also supplied.
Is driven. Further, in the vacuum reaction container 3, oxygen is introduced from the reaction gas introduction port and the degree of vacuum becomes about 1 Torr.

At this time, the lower raw material valve 13b is opened and the upper raw material valve 13a is closed, and then the liquid metering pump 14 is driven. The liquid metering pump 14 supplies the liquid raw material in the liquid raw material container 16 to the lower capillary 11b at a rate of 1 ml per minute,
The lower capillary 11b supplies this liquid raw material to the ultrasonic transducer 9 of the lower nebulizer 6b.

The lower nebulizer 6b atomizes this liquid raw material at the moment when it touches the ultrasonic vibrator 9, and jets it toward the upper substrate support 21.

The jetted liquid raw material, when passing between the plasma electrodes 17 in the center of the container body 3, is activated by a plasma reaction and reaches the polyester film 24 arranged above the plasma electrodes 17. Along with the surface of the polyester film 24, a thin film of copper oxide Cu ₆ Y
This produces O _8-z Cl.

Further, in such a thin film forming process, a film thickness of 0.5 μm can be obtained, for example, in a deposition time of 1 minute, and the particle size is selected by gravity and the transport distance in the transport process. Therefore, the thin film can be formed densely and smoothly.

As described above, according to this embodiment, the liquid metering pump 14 and the capillaries 11a and 11b supply a predetermined amount of liquid raw material into the vacuum reaction vessel 3, and the upper or lower nebulizers 6a and 6b use the same. Capillary 11
Since the liquid raw materials supplied from a and 11b are atomized and jetted toward the polyester film 24 that is the base material, by atomizing the liquid raw materials in the reaction container unlike the conventional case, Since the conventional raw material supply pipe is deleted to improve the transportation efficiency of the atomized raw material, a film can be stably formed even under a low pressure of 1 Torr or less.

Further, according to the present embodiment, since the discharge is generated under the low pressure, it is possible to easily obtain the stable discharge by using the general-purpose high frequency power supply 19 of 13.56 MHz.

Further, according to the present embodiment, the nebulizer 6
Since a and 6b are arranged in the vertical direction with respect to the base material holder 21, gravity can be effectively used.
That is, in the deposition down method, the atomized raw material is transported to the polyester film 24 by gravity even if the carrier gas is not flowed and the pressure is lower than 0.1 Torr. Therefore, the deposition rate is improved. In addition to being able to achieve the above, it is possible to stably form a film even under a low pressure.

On the other hand, in the case of the deposition-up method, since the atomized raw material whose particle size is selected according to gravity and transportation distance is transported to the polyester film 24, it is possible to deposit the film densely and smoothly. it can. Since the particle size to be selected can be controlled by changing the supply flow rate of the liquid raw material, the reaction pressure, and the position of the substrate holding table, the film quality can be managed in accordance with this control.

Further, according to the present embodiment, since the liquid raw material is atomized and supplied by using the upper or lower nebulizers 6a, 6b, other vaporization supply methods such as the simple vaporization method, the bubbling method and the vaporizer method are used. Unlike the above, the composition of the raw material can be easily controlled without being affected by the vapor pressure of the raw material.

Further, according to the present embodiment, the upper and lower nebulizers 6a and 6b are provided with the ultrasonic transducers 9 for atomizing the liquid raw material, so that it is 1 to 2 orders of magnitude smaller than that of the spray nozzle. Since the atomized raw material with a very fine particle size of 1 to 10 μm can be obtained, the transport efficiency is further improved and the reaction pressure is reduced, thereby lowering the temperature of the film formation process. be able to.

In the above embodiment, the case where the upper or lower nebulizer 6a, 6b using the ultrasonic transducer 9 is applied has been described, but the present invention is not limited to this, and a nebulizer using a spray nozzle may be applied. The present invention can be implemented in the same manner to obtain the same effect.

In the above embodiment, the case where the upper or lower nebulizers 6a and 6b are arranged in the vertical direction with respect to the base material holder 21 has been described. However, the present invention is not limited to this, and the nebulizer is provided on the side wall of the vacuum reaction vessel. Even with the arrangement, the same effects can be obtained by implementing the present invention in the same manner.

Further, in the above embodiment, the case where the peristaltic pump is used as the liquid metering pump 24 has been described, but the present invention is not limited to this, and the present invention can be applied even if another liquid metering pump is used. The same effect can be obtained by carrying out similarly.

Further, in the above embodiment, the plasma electrode 17
However, the present invention is not limited to this, and the present invention may be applied to a plasma electrode of a parallel plate capacitive coupling type or an inductive coupling type using a coil. The same effect can be obtained by carrying out similarly.

Further, in the above embodiment, the high frequency power source 19
The power supply frequency of 13.56 MHz is described above, but the present invention is not limited to this, and the same effect can be obtained by implementing the present invention similarly even if the power supply frequency of any value from 1 kHz to 200 MHz is used. be able to. Further, even with a configuration in which plasma is generated by causing microwave discharge using a waveguide, the same effects can be obtained by implementing the present invention in the same manner.

In the above embodiment, the case where the temperature adjusting mechanism is not provided on the base material support 21 has been described. However, the present invention is not limited to this, and a heating mechanism such as a sheath heater or an infrared lamp heater, water cooling or the like is provided on the base material support base. Even if the base material temperature is adjusted by adding the cooling mechanism, the present invention can be carried out in the same manner and the same effect can be obtained.

Further, in the above-mentioned embodiment, the case where the copper oxide thin film is formed on the polyester film 24 has been described, but the present invention is not limited to this, and other base materials and other liquid raw materials may be used to obtain other materials. Even if another thin film is formed on the base material, the present invention can be similarly implemented and the same effect can be obtained.

Besides, the present invention can be variously modified and implemented without departing from the gist thereof.

[0068]

As described above, the invention of claim 1 is
The liquid raw material supply means supplies a predetermined amount of liquid raw material into the reaction vessel, and the atomized raw material injection means atomizes the liquid raw material supplied from the liquid raw material supply means to create an atomized raw material, Since the atomized raw material is sprayed toward the base material, the atomization of the liquid raw material is performed in the reaction vessel, thereby improving the transport efficiency of the atomized raw material and stably forming a film even under low pressure. It is possible to provide a CVD apparatus that can be produced.

Further, in the invention corresponding to claim 2, the atomizing material injection means is arranged in the vertical direction with respect to the base material holding base. Therefore, in addition to the effect of claim 1, By the action, it is possible to further improve the transportation efficiency of atomized raw material C
A VD device can be provided.

Further, in the invention corresponding to claim 3, the atomized raw material injection means of the invention of claim 1 or 2 is provided with an ultrasonic transducer for atomizing the liquid raw material. Since the liquid raw material can be atomized to have a very small particle size, it is possible to provide a CVD apparatus capable of further improving the transport efficiency and lowering the reaction pressure, thereby lowering the temperature of the film formation process.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a configuration of a nebulizer according to the same embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Container body, 2a ... Upper flange, 2b ... Lower flange, 3 ... Vacuum reaction container, 4a ... Upper vacuum valve, 4b ...
Lower vacuum valve, 5 ... Vacuum pump, 6a ... Upper nebulizer, 6b ... Lower nebulizer, 7 ... Piezoelectric ceramics, 8 ... Metal electrode, 9 ... Ultrasonic transducer, 10 ... Elastomer, 11a ... Upper capillary, 11b ... Lower capillary, 12a ... upper feedthrough, 12b ... lower feedthrough, 13a ... upper material valve, 13b ... lower material valve, 14 ... liquid metering pump, 15a ... upper sheath heater, 15b ... lower sheath heater, 16 ... liquid material container, 17 ... plasma Electrodes, 18 ... Matching circuit, 19 ...
High frequency power source, 20a, 20b ... O-ring seal part.

Claims (3)

[Claims] 1. The atomized raw material is supplied into a reaction container, and the atomized raw material is supplied toward a base material holding table which is disposed in the reaction container and holds a base material. In a CVD apparatus for forming a thin film on a substrate, a liquid raw material supply means for supplying a predetermined amount of liquid raw material into the reaction vessel, and the liquid raw material supplied from the liquid raw material supply means are atomized to form the atomized state. An atomizing material injection means for producing an atomizing material and injecting the atomizing material toward the base material. 2. The CVD apparatus according to claim 1, wherein the atomized raw material injection unit is arranged in a vertical direction with respect to the base material holding base. 3. The CVD apparatus according to claim 1 or 2, wherein the atomizing material injection unit includes an ultrasonic vibrator for atomizing the liquid material. apparatus.