JPH07122525A - Circuit board and surface treatment at conductor part thereon - Google Patents

Circuit board and surface treatment at conductor part thereon

Info

Publication number
JPH07122525A
JPH07122525A JP8211994A JP8211994A JPH07122525A JP H07122525 A JPH07122525 A JP H07122525A JP 8211994 A JP8211994 A JP 8211994A JP 8211994 A JP8211994 A JP 8211994A JP H07122525 A JPH07122525 A JP H07122525A
Authority
JP
Japan
Prior art keywords
circuit board
energy beam
surface treatment
conductor portion
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8211994A
Other languages
Japanese (ja)
Other versions
JP3133212B2 (en
Inventor
Nobuyuki Asahi
信行 朝日
Atsushi Tatsuta
淳 立田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP8211994A priority Critical patent/JP3133212B2/en
Publication of JPH07122525A publication Critical patent/JPH07122525A/en
Application granted granted Critical
Publication of JP3133212B2 publication Critical patent/JP3133212B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To enhance the reliability of electrical joint on the surface significantly for the conductor part on a circuit board while sustaining other characteristics at the conductor part without having any adverse effect on the parts other than the conductor part. CONSTITUTION:An energy beam R is projected under such conditions as a conductor part 20 is surface treated without causing formation of an alloy between a metal material layer 22 on the surface of the conductor part 20 and other metal material layer 24 thus achieving an appropriate surface treatment effect without causing deterioration of characteristics due to formation of an alloy layer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は、回路基板上の導体部
の表面処理方法および回路基板に関し、詳しくは、半導
体パッケージのように、回路基板の上に金属材料からな
る導体部を形成しておき、この導体部を利用して半導体
チップと外部接続端子などとの電気的な接続を果たすよ
うにする回路基板において、導体部の特性向上のために
行われる表面処理方法と、このような表面処理方法を行
うのに適した回路基板の構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of treating the surface of a conductor portion on a circuit board and the circuit board. More specifically, the conductor portion made of a metal material is formed on the circuit board like a semiconductor package. In addition, in a circuit board that uses this conductor portion to electrically connect a semiconductor chip and an external connection terminal, etc., a surface treatment method performed for improving the characteristics of the conductor portion, and such a surface treatment method. The present invention relates to a structure of a circuit board suitable for performing a processing method.

【０００２】[0002]

【従来の技術】従来、ＰＧＡ（Pin Grid Array）、ＱＦ
Ｐ（Quard Flat Pakage ）、ＣＯＢ（Chip On Board ）
等と呼ばれる各種の半導体パッケージ製品においては、
合成樹脂などからなる回路基板に、銅や金などの金属材
料層からなる導体部を形成しておき、この導体部に半導
体チップなどの各種電子部品を電気的に接合して、電子
部品同士あるいは電子部品と外部回路との接続を果して
いた。このような半導体パッケージ用の回路基板に形成
される導体部は、半導体チップなどに合わせて極めて微
細な加工が必要であるとともに、微弱な電流や高い周波
数の電流が流されるため、その電気的特性には極めて高
い性能が要求される。2. Description of the Related Art Conventionally, PGA (Pin Grid Array), QF
P (Quard Flat Pakage), COB (Chip On Board)
In various semiconductor package products called etc.,
A conductor portion made of a metal material layer such as copper or gold is formed on a circuit board made of a synthetic resin or the like, and various electronic components such as a semiconductor chip are electrically joined to the conductor portion to form electronic components or The connection between the electronic parts and the external circuit was achieved. The conductor portion formed on the circuit board for such a semiconductor package requires extremely fine processing according to the semiconductor chip and the like, and a weak current or a high-frequency current is passed through the conductor portion, so that its electrical characteristics Requires extremely high performance.

【０００３】ところが、回路基板を製造する雰囲気の影
響や、その他の製造工程上の種々の影響のために、回路
基板上の導体部表面が汚染されたり、導体部表面が金属
的に不活性になってしまったりして、導体部表面の絶縁
抵抗値が増大したり、電気的接合の信頼性が低下したり
する。このような導体部表面の信頼性低下は、回路基板
全体の特性に致命的なダメージを与えることになる。However, the surface of the conductor portion on the circuit board is contaminated or the surface of the conductor portion becomes metallically inactive due to the influence of the atmosphere for manufacturing the circuit board and other various influences in the manufacturing process. As a result, the insulation resistance value on the surface of the conductor portion increases, and the reliability of electrical connection decreases. Such a decrease in reliability of the surface of the conductor portion causes fatal damage to the characteristics of the entire circuit board.

【０００４】そこで、回路基板を洗浄したり、導体部の
表面改質等を行ったりして、導体部表面の信頼性を向上
させる方法が種々提案されている。従来における導体部
の洗浄方法としては、一般的には、フロン等の化学薬品
を用いた湿式化学的方法が多く採用されていた。しか
し、近年、地球環境問題等により、フロンを使用する洗
浄方法が問題とされ、フロンを使用しない方法が求めら
れている。そこで、フロンによる洗浄の代わりに、純水
を用いて洗浄する方法や、表面活性剤を用いる洗浄方法
が提案されている。Therefore, various methods have been proposed for improving the reliability of the surface of the conductor by cleaning the circuit board or modifying the surface of the conductor. As a conventional method for cleaning the conductor portion, generally, a wet chemical method using a chemical such as CFC has been widely adopted. However, in recent years, due to global environmental problems and the like, a cleaning method using chlorofluorocarbon has become a problem, and a method not using fluorocarbon is required. Therefore, a cleaning method using pure water or a cleaning method using a surface active agent has been proposed in place of cleaning with CFCs.

【０００５】しかし、これらの洗浄方法では、導体表面
に存在する汚染物質を完全に除去することができない。
また、洗浄剤が導体部表面に残留して、却って導体部の
特性を損なったりする問題がある。さらに、これらの方
法は、導体部表面に汚染物質が付着した程度であれば対
応できるが、導体部表面が金属的に不活性になってしま
ったものに対しては、前記のような洗浄方法では、電気
的接合の信頼性を回復させることができない。However, these cleaning methods cannot completely remove contaminants existing on the conductor surface.
Further, there is a problem that the cleaning agent remains on the surface of the conductor portion, and rather deteriorates the characteristics of the conductor portion. Further, these methods can be applied as long as the contaminant is attached to the surface of the conductor portion, but the cleaning method as described above can be applied to the case where the conductor surface is metallically inactive. Then, the reliability of the electrical connection cannot be restored.

【０００６】そこで、上記のような湿式洗浄方法に代わ
る乾式表面処理方法として、近年、レーザ光線などのエ
ネルギービームを導体部表面に照射して、汚染物質を除
去したり、導体部表面の金属的活性を回復させたりする
方法が提案されている。また、複数の金属材料層からな
る導体部にレーザ光線を照射して、表面のハンダ濡れ性
などが良い合金層を形成させる方法が、特開平２−２３
６２４９号公報に開示されている。Therefore, as a dry surface treatment method replacing the above-mentioned wet cleaning method, in recent years, an energy beam such as a laser beam is applied to the conductor surface to remove contaminants or to make the conductor surface metallic. Methods for restoring activity have been proposed. Further, there is a method of irradiating a laser beam on a conductor portion composed of a plurality of metal material layers to form an alloy layer having good solder wettability on the surface, and the like.
It is disclosed in Japanese Patent No. 6249.

【０００７】[0007]

【発明が解決しようとする課題】ところが、上記のよう
な従来におけるエネルギービームを用いた乾式表面処理
方法では、導体部表面の電気的接合信頼性が十分に向上
しないという問題があった。具体的には、例えば、導体
部周辺の樹脂などにエネルギービームが照射されると、
樹脂から飛散物が発生し、この飛散物が導体部表面に付
着して汚染するという問題がある。また、前記した、導
体部表面にレーザ光線を照射してハンダ濡れ性などの良
い合金層を形成させる方法では、金属材料層の間で金属
間化合物が形成されてしまって、導体部全体の抵抗値が
増大することになり、結果として導体部の電気的接合性
が低下するという問題があった。しかも、合金層を形成
させるに十分な大きなレーザ入熱量は、回路基板の導体
部以外の部分に熱影響を及ぼして非導体部分の特性を変
えてしまう結果、導体部間の絶縁抵抗値が悪くなり、回
路全体の電気的信頼性が低下するという問題も生じる。However, in the conventional dry surface treatment method using an energy beam as described above, there is a problem that the reliability of electrical bonding on the surface of the conductor portion is not sufficiently improved. Specifically, for example, when the resin around the conductor is irradiated with the energy beam,
There is a problem in that scattered matter is generated from the resin, and the scattered matter adheres to and contaminates the conductor surface. Further, in the above-described method of irradiating the conductor surface with a laser beam to form an alloy layer having good solder wettability, an intermetallic compound is formed between the metal material layers, and the resistance of the entire conductor portion is increased. There is a problem in that the value increases, and as a result, the electrical bondability of the conductor portion deteriorates. Moreover, a large amount of heat input to the laser to form the alloy layer has a thermal effect on portions other than the conductor portion of the circuit board and changes the characteristics of the non-conductor portion, resulting in poor insulation resistance between conductor portions. Therefore, there arises a problem that the electrical reliability of the entire circuit is lowered.

【０００８】そこで、この発明の課題は、従来のエネル
ギービームを用いた乾式表面処理方法の問題点を解消し
て、回路基板上の導体部に対して、表面の電気的接合信
頼性を格段に向上させることができるとともに、導体部
の他の特性を損なったり、導体部以外の部分に悪影響を
与えたりすることのない回路基板上の導体部の表面処理
方法を提供することにある。また、このような表面処理
方法に適した回路基板を提供することにある。Therefore, an object of the present invention is to solve the problems of the conventional dry surface treatment method using an energy beam and to remarkably improve the reliability of the electrical connection of the surface to the conductor portion on the circuit board. It is an object of the present invention to provide a surface treatment method for a conductor portion on a circuit board, which can be improved and does not impair other characteristics of the conductor portion or adversely affect portions other than the conductor portion. Another object is to provide a circuit board suitable for such a surface treatment method.

【０００９】[0009]

【課題を解決するための手段】上記課題を解決する、こ
の発明にかかる回路基板上の導体部の表面処理方法は、
有機材料からなる基板上に、複数の金属材料層を積層し
た導体部が形成されてなる回路基板に対して、導体部表
面にエネルギービームを照射して導体部の表面処理を行
う方法において、エネルギービームを、導体部表面の金
属材料層が他の金属材料層との間で合金を形成すること
なく導体部に表面処理が施される照射条件で照射する。A method for surface treatment of a conductor portion on a circuit board according to the present invention, which solves the above-mentioned problems, comprises:
In a method of performing a surface treatment of a conductor portion by irradiating an energy beam on the conductor portion surface with respect to a circuit board including a conductor portion formed by laminating a plurality of metal material layers on a substrate made of an organic material, The beam is irradiated under irradiation conditions in which the conductor portion is surface-treated without forming an alloy between the metal material layer on the conductor portion surface and another metal material layer.

【００１０】この発明を適用する回路基板の材料や構造
は、基本的には、従来の各種半導体パッケージなどに利
用されている通常の回路基板と同様でよい。例えば、半
導体パッケージでは、合成樹脂からなる基板に、半導体
チップを収容するキャビティーが凹入形成され、その周
囲の樹脂基板表面に、いわゆるインナーリードと呼ばれ
る導体部が設けられたものがある。このようなインナー
リードの他、各種の電子部品において、樹脂などの有機
材料からなる基板と、この基板の上に形成される導体部
とを備えた回路基板であれば、任意の形状および構造を
採用することができる。The material and structure of the circuit board to which the present invention is applied may be basically the same as a normal circuit board used in various conventional semiconductor packages. For example, in some semiconductor packages, a cavity for accommodating a semiconductor chip is recessed in a substrate made of synthetic resin, and a conductor portion called a so-called inner lead is provided on the surface of the resin substrate around the cavity. In addition to such inner leads, in various electronic components, a circuit board including a substrate made of an organic material such as resin and a conductor portion formed on the substrate may have any shape and structure. Can be adopted.

【００１１】基板材料としては、例えば半導体パッケー
ジであれば、変性ポリイミド樹脂など通常の半導体パッ
ケージ用樹脂材料が使用でき、その他にも一般的な基板
用合成樹脂など、いわゆる有機材料からなる基板が用い
られる。基板材料としては、エネルギービーム照射時
に、出来るだけ飛散物が発生し難いものが好ましい。セ
ラミックなどの無機材料からなる基板は、前記したエネ
ルギービームの照射による飛散物の発生のような問題点
は生じ難いが、製造加工性やコストなどの点で、有機材
料からなる基板が用いられる。As the substrate material, for example, in the case of a semiconductor package, an ordinary resin material for semiconductor package such as modified polyimide resin can be used, and in addition, a substrate made of so-called organic material such as general synthetic resin for substrate is used. To be As the substrate material, it is preferable to use a material in which scattered substances are unlikely to be generated during irradiation with the energy beam. A substrate made of an inorganic material such as ceramic is unlikely to cause problems such as the generation of scattered particles due to the irradiation of the energy beam, but a substrate made of an organic material is used in terms of manufacturing processability and cost.

【００１２】導体部の材料としては、銅、ニッケル、
金、銀、アルミニウムその他、従来の各種回路基板で導
体部を構成する金属材料層として使用されていた導電性
金属が使用できる。この発明では、これらの金属材料か
らなる層を、複数積層して導体部を構成する。金属材料
層の組み合わせは、従来の回路基板に形成される導体部
と同様に、回路基板の用途、基板材料、導体部に接続す
る配線の材料など、種々の条件を考慮して選択すればよ
い。As the material of the conductor portion, copper, nickel,
It is possible to use gold, silver, aluminum, or any other conductive metal that has been used as a metal material layer forming a conductor portion in various conventional circuit boards. In the present invention, the conductor portion is formed by laminating a plurality of layers made of these metal materials. The combination of metal material layers may be selected in consideration of various conditions such as the application of the circuit board, the substrate material, and the material of the wiring connected to the conductor portion, like the conductor portion formed on the conventional circuit board. .

【００１３】エネルギービームとは、光、放射線、プラ
ズマその他、導体部表面に対して、何らかの表面処理作
用を行うことのできるエネルギー線を照射できるもので
あれば、従来、半導体製造技術などで利用されているよ
うな、各種のエネルギービームが使用できる。導体部表
面に対する汚染物除去あるいは改質作用に優れ、取扱い
易いエネルギービームとして、レーザビームがあり、特
に、エキシマレーザが望ましい。エキシマレーザ以外
に、ＹＡＧレーザやＣＯ2 レーザなども使用でき、これ
らのレーザの高調波を利用してもよい。エキシマレーザ
を用いる場合、照射エネルギー密度は０．５〜３．０ J
/cm2程度で、１〜１０ショット程度を照射するのが望ま
しい。The energy beam is conventionally used in semiconductor manufacturing technology, etc., as long as it can irradiate light, radiation, plasma or other energy rays capable of performing some surface treatment on the surface of the conductor portion. Various energy beams, such as those described above, can be used. A laser beam is an energy beam that is excellent in removing contaminants or modifying the surface of the conductor and is easy to handle, and an excimer laser is particularly desirable. In addition to the excimer laser, a YAG laser, a CO 2 laser, or the like can be used, and harmonics of these lasers may be used. When using an excimer laser, the irradiation energy density is 0.5 to 3.0 J
It is desirable to irradiate about 1 to 10 shots at about / cm 2 .

【００１４】エネルギービームは、回路基板の表面のう
ち、出来るだけ、導体部表面のみに照射されるようにす
るのが好ましいが、この発明では、導体部周辺の基板表
面の一部などに、エネルギービームが照射されても構わ
ない。但し、導体部表面以外の部分に照射されたエネル
ギービームは無駄になるので、ビームを走査したり、マ
スクを介在させたりして、導体部表面およびその周辺の
みにエネルギービームが効率的に照射されるようにする
ことが望ましい。It is preferable that the energy beam is irradiated only on the surface of the conductor portion of the surface of the circuit board as much as possible. However, in the present invention, the energy beam is applied to a part of the surface of the substrate around the conductor portion. The beam may be irradiated. However, since the energy beam applied to the part other than the conductor surface is wasted, the energy beam is efficiently applied only to the conductor surface and its periphery by scanning the beam or interposing a mask. It is desirable to do so.

【００１５】エネルギービームを、導体部表面の金属材
料層が別の金属材料層との間で合金を形成することなく
導体部に表面処理が施される条件に設定して照射する。
すなわち、金属材料層同士が合金を形成するのに必要な
エネルギーは、この発明の目的とする導体部表面の汚染
物除去や表面改質に必要なエネルギーよりも大きいの
で、この発明の目的を達成するのに十分ではあるが、前
記合金が形成されない程度のエネルギーに設定しておく
のである。エネルギービームの設定条件は、回路基板お
よび導体部の構成材料および構造と、達成しようとする
表面処理効果によって変わってくる。例えば、表面処理
効果として、導体部表面の汚染物除去だけを目的とする
のであれば、比較的小さなエネルギーでも十分な場合も
ある。基板材料からの飛散物が少なければ、エネルギー
ビームも少なくて済む。The energy beam is irradiated under the condition that the metal material layer on the surface of the conductor portion is subjected to the surface treatment without forming an alloy with another metal material layer.
That is, the energy required for the metal material layers to form an alloy with each other is larger than the energy required for removing contaminants and surface modification of the conductor surface, which is the object of the present invention, and thus achieves the object of the present invention. However, the energy is set to such an extent that the alloy is not formed. The setting conditions of the energy beam depend on the constituent materials and structures of the circuit board and the conductor and the surface treatment effect to be achieved. For example, if the purpose of the surface treatment is only to remove contaminants on the surface of the conductor, a relatively small energy may be sufficient. If the scattered material from the substrate material is small, the energy beam is also small.

【００１６】さらに具体的には、エネルギービームの照
射条件として、導体部表面の金属材料層の厚み、熱伝導
率およびエネルギービームに対する閾値を含む材料特性
に合わせて、エネルギービームの波長、エネルギー密
度、ショット数、照射時間、パルス幅、ピークパワーお
よび照射時間を含む少なくともひとつの照射条件を調整
しておくのが好ましい。これらの照射条件は、エネルギ
ービームの照射装置で変更調整することができる。ま
た、材料特性と照射条件との関係は、実験的に、あるい
は一部理論的に解析することにより、知ることができ
る。More specifically, as the irradiation conditions of the energy beam, the wavelength of the energy beam, the energy density, the energy density, the energy density of the metal material layer on the surface of the conductor, the thermal conductivity, and the material properties including the threshold value for the energy beam, It is preferable to adjust at least one irradiation condition including the number of shots, irradiation time, pulse width, peak power and irradiation time. These irradiation conditions can be changed and adjusted by an energy beam irradiation device. Further, the relationship between the material characteristics and the irradiation conditions can be known by performing an experimental or partial theoretical analysis.

【００１７】つぎに、エネルギービームの照射条件を予
め決めておくのでなく、回路基板にエネルギービームを
照射したときの、導体部および／またはその周辺の表面
状態の観測結果から、エネルギービームの照射条件を制
御する方法も採用できる。すなわち、導体部表面の汚染
物が除去されているか否か、あるいは、導体部表面の微
細な凹凸などが解消されているか否か、さらには、導体
部周辺の基板表面から飛散物が発生しているか否かなど
は、エネルギービームを照射しながら、導体部やその周
辺の表面状態を観察することによって、知ることができ
る。したがって、導体部などの表面状態を観察しなが
ら、目的とする表面状態が得られるように、エネルギー
ビームの照射条件を制御すればよいのである。エネルギ
ービームを照射中に、導体部などの表面状態を観察する
には、ＣＣＤカメラなどの観察手段を設置しておけばよ
い。このような観察手段とエネルギービームの照射装置
を、コンピュータなどの制御装置でつないで、観察され
た表面状態を解析し、その解析結果に基づいて、自動的
にエネルギービームの照射条件を変更調整すれば、適切
な表面処理が行える。一般的には、導体部の表面に凹凸
があったり汚染物が付着している状態から、導体部の表
面のみが溶融して平滑な表面を構成するようになった状
態が、汚染物除去や表面改質が十分に達成された状態を
表しているので、前記したＣＣＤカメラで、導体部表面
の反射率などを検出すれば、適切なエネルギービーム照
射条件を容易に知ることができる。Next, the irradiation condition of the energy beam is not determined in advance, but the irradiation condition of the energy beam is obtained from the observation result of the surface condition of the conductor portion and / or its periphery when the circuit board is irradiated with the energy beam. The method of controlling can also be adopted. That is, whether or not contaminants on the conductor surface have been removed, whether or not fine irregularities on the conductor surface have been eliminated, and further, scattered materials are generated from the substrate surface around the conductor portion. Whether or not it can be known by observing the surface state of the conductor portion and its periphery while irradiating the energy beam. Therefore, the irradiation condition of the energy beam may be controlled so that the desired surface condition can be obtained while observing the surface condition of the conductor portion and the like. An observation means such as a CCD camera may be installed in order to observe the surface state of the conductor portion or the like during irradiation of the energy beam. By connecting the observation means and the energy beam irradiation device with a control device such as a computer, the observed surface condition is analyzed, and based on the analysis result, the energy beam irradiation condition can be automatically changed and adjusted. Therefore, appropriate surface treatment can be performed. In general, when the conductor surface is uneven or has contaminants attached, only the conductor surface is melted to form a smooth surface. Since the state in which the surface modification is sufficiently achieved is shown, the appropriate energy beam irradiation condition can be easily known by detecting the reflectance of the conductor surface with the CCD camera described above.

【００１８】ＣＣＤカメラのような視覚的な観測手段す
なわち観察手段の他にも、導体部などの表面状態を検知
できる各種測定手段を用いれば、前記同様に、エネルギ
ービーム照射条件を適切に制御することができる。具体
的には、例えば、導体部およびその周辺に発生した飛散
物を、化学的あるいは物理的な検出器で検出し、導体部
からの汚染物の飛散あるいは基板表面からの樹脂などの
飛散が適切な量になるように、エネルギービーム照射条
件を制御すればよい。飛散物の成分分析を行って、導体
部の表面状態を推測し、導体部の表面状態が適切になる
ように、エネルギービームの照射条件を制御することも
できる。勿論、飛散物の検出器のような物理的化学的情
報の測定手段とＣＣＤカメラのような観察手段を組み合
わせて、エネルギービームの照射条件を制御することも
可能である。In addition to the visual observation means such as the CCD camera, that is, the observation means, if various measuring means capable of detecting the surface condition of the conductor portion are used, the energy beam irradiation conditions are appropriately controlled in the same manner as described above. be able to. Specifically, for example, it is appropriate to detect scattered substances generated in and around the conductor with a chemical or physical detector, and to disperse contaminants from the conductor or resin from the substrate surface. The energy beam irradiation conditions may be controlled so that the amount becomes large. It is also possible to analyze the components of the scattered matter, estimate the surface state of the conductor portion, and control the irradiation condition of the energy beam so that the surface state of the conductor portion becomes appropriate. Of course, it is also possible to control the irradiation conditions of the energy beam by combining a physical and chemical information measuring means such as a scattered matter detector and an observation means such as a CCD camera.

【００１９】エネルギービームの照射を、減圧雰囲気下
で行うことができる。具体的には、回路基板に対して表
面処理を行う処理室に真空吸引装置などを設置しておい
て、処理室内を減圧雰囲気に維持できるようにしておけ
ばよい。処理室や真空吸引装置の構造は、通常の表面処
理装置の場合と同様でよい。減圧雰囲気の圧力として
は、表面処理に伴って発生する飛散物の導体部への再付
着が防止できる程度に設定しておけばよい。具体的に
は、１０-1〜１０-3Torr程度が好ましい。Irradiation with the energy beam can be performed in a reduced pressure atmosphere. Specifically, a vacuum suction device or the like may be installed in the processing chamber for performing the surface treatment on the circuit board so that the inside of the processing chamber can be maintained in a reduced pressure atmosphere. The structure of the processing chamber and the vacuum suction device may be the same as that of a normal surface processing device. The pressure of the depressurized atmosphere may be set to such an extent as to prevent re-adhesion of scattered particles generated by the surface treatment to the conductor portion. Specifically, about 10 -1 to 10 -3 Torr is preferable.

【００２０】エネルギービームの照射装置は、処理室内
に設けておいてもよいし、処理室外に設けられた照射装
置から処理室内にエネルギービームを照射するようにし
てもよい。処理室外から処理室内にエネルギービームを
照射する場合、処理室の壁面の一部には、エネルギービ
ームを透過する透過窓を設けておく。透過窓の材料や構
造は、使用するエネルギービームの種類に合わせて、そ
のエネルギービームを良好に透過し、かつ、処理室内を
所定の減圧雰囲気に維持できるようになっていればよ
い。The energy beam irradiation device may be provided inside the processing chamber, or the energy beam may be irradiated into the processing chamber from an irradiation device provided outside the processing chamber. When irradiating the energy beam from the outside of the processing chamber into the processing chamber, a transmission window for transmitting the energy beam is provided in part of the wall surface of the processing chamber. It suffices that the material and structure of the transmission window is adapted so that the energy beam can be satisfactorily transmitted and the inside of the processing chamber can be maintained in a predetermined reduced pressure atmosphere in accordance with the type of energy beam used.

【００２１】エネルギービームによる回路基板の表面処
理を行いながら、透過窓の汚染状態を監視することがで
きる。具体的には、透過窓を通過したエネルギービーム
のエネルギー量を検出器で測定すればよい。表面処理に
用いられるエネルギービームとは別のエネルギービーム
を透過窓に照射して、通過エネルギー量を測定するよう
にしてもよい。別のエネルギービームは、表面処理用の
エネルギービームと同じように、処理中は連続的に照射
するようにしておいてもよいし、一定時間毎に断続的に
照射するようにしてもよい。It is possible to monitor the contamination state of the transmission window while performing the surface treatment of the circuit board with the energy beam. Specifically, the detector may measure the amount of energy of the energy beam that has passed through the transmission window. An energy beam different from the energy beam used for the surface treatment may be irradiated on the transmission window to measure the amount of passing energy. Similar to the energy beam for surface treatment, another energy beam may be continuously irradiated during the treatment, or may be intermittently irradiated at regular intervals.

【００２２】透過窓の汚染状態を監視した結果にもとづ
いて、前記した表面処理用のエネルギービームの強度そ
の他の照射条件を調整したり、透過窓の洗浄や交換を指
令することができる。減圧雰囲気中の不純物混入状態を
監視することができる。減圧雰囲気中に不純物が混入す
ると、透過窓の汚染も進むことになるので、前記した透
過窓の汚染状態の監視を行うことで、間接的に、減圧雰
囲気中の不純物混入状態を監視してもよい。On the basis of the result of monitoring the contamination state of the transmission window, it is possible to adjust the intensity of the energy beam for surface treatment and other irradiation conditions, and to instruct the cleaning or replacement of the transmission window. It is possible to monitor the state of inclusion of impurities in the reduced pressure atmosphere. When impurities are mixed in the reduced pressure atmosphere, the contamination of the transmission window also progresses. Therefore, by monitoring the contamination state of the transmission window as described above, it is possible to indirectly monitor the contamination state of the impurities in the reduced pressure atmosphere. Good.

【００２３】不純物混入状態の監視情報にもとづいて、
前記した表面処理用のエネルギービームの照射条件を調
整したり、処理室内の雰囲気の洗浄処理や交換処理を行
うことができる。減圧雰囲気のガス組成を測定して、減
圧雰囲気中の不純物混入状態を監視することができる。
ガス組成の測定装置は、各種処理装置などに組み込まれ
ている通常のガス分析装置や元素分析装置などが用いら
れる。ガス組成の測定は、雰囲気中の全てのガスや元素
の組成について測定する必要はなく、不純物混入量の変
化を適切に反映するような特定のガスや元素について、
その存在量を測定すればよい。Based on the monitoring information of the state of inclusion of impurities,
It is possible to adjust the irradiation conditions of the energy beam for the surface treatment described above, and to perform the cleaning treatment and the exchange treatment of the atmosphere in the treatment chamber. By measuring the gas composition of the reduced pressure atmosphere, it is possible to monitor the state of inclusion of impurities in the reduced pressure atmosphere.
As the gas composition measuring device, a normal gas analyzing device or elemental analyzing device incorporated in various processing devices is used. It is not necessary to measure the composition of all gases and elements in the atmosphere for measuring the gas composition, but for a specific gas or element that appropriately reflects the change in the amount of impurities mixed,
Its abundance may be measured.

【００２４】減圧雰囲気中の不純物混入状態を、減圧雰
囲気のレーザ光透過率を測定することで監視することが
できる。レーザ光透過率の測定には、前記した透過窓の
汚染状態を監視する際に使用されるようなレーザ照射装
置およびエネルギー量の検出器を用いることができる。
表面処理によって発生するプラズマの発光量を測定し
て、減圧雰囲気中の不純物混入状態を監視することがで
きる。プラズマの発光量を測定するには、ＣＣＤカメラ
などの撮影手段と、撮影手段で撮影された映像情報から
プラズマ発光量の情報を取得するコンピュータなどの解
析処理手段とを備えておけばよい。The state of inclusion of impurities in the reduced pressure atmosphere can be monitored by measuring the laser light transmittance in the reduced pressure atmosphere. For the measurement of the laser beam transmittance, a laser irradiation device and an energy amount detector as used when monitoring the contamination state of the transmission window can be used.
By measuring the amount of light emitted from plasma generated by the surface treatment, the state of inclusion of impurities in the reduced pressure atmosphere can be monitored. In order to measure the amount of emitted light of plasma, a photographing means such as a CCD camera and an analysis processing means such as a computer that acquires information on the amount of emitted plasma plasma from image information taken by the photographing means may be provided.

【００２５】減圧雰囲気の圧力変化を検出して、減圧雰
囲気中の不純物混入状態を監視することができる。減圧
雰囲気の圧力変化を検出するには、通常の圧力測定装置
を用いることができる。以上に説明した不純物混入状態
を監視する手段は、それぞれを単独で用いてもよいし、
複数の監視手段を組み合わせることもできる。透過窓の
汚染状況の監視と雰囲気中の不純物混入状態の監視とを
併用することもできる。By detecting a pressure change in the reduced pressure atmosphere, it is possible to monitor the state of inclusion of impurities in the reduced pressure atmosphere. An ordinary pressure measuring device can be used to detect a pressure change in the reduced pressure atmosphere. The means for monitoring the impurity mixing state described above may be used alone,
It is also possible to combine a plurality of monitoring means. It is also possible to use both the monitoring of the contamination state of the transmission window and the monitoring of the state of inclusion of impurities in the atmosphere.

【００２６】前記したような表面処理が行われた回路基
板に対して、導体部の表面特性を検査して処理結果を評
価することができる。検査する表面特性としては、レー
ザビームの反射率、表面粗さ、Ｘ線回析結果など、目的
とする表面処理が良好に行われた場合と処理不良の場合
で、何らかの変化が生じる特性であれば採用することが
できる。但し、表面特性を検査したときに、導体部の表
面に何らかの悪影響を与えるような検査手段は好ましく
ない。With respect to the circuit board which has been subjected to the surface treatment as described above, the surface characteristics of the conductor portion can be inspected to evaluate the treatment result. The surface characteristics to be inspected may be characteristics such as laser beam reflectance, surface roughness, X-ray diffraction result, etc., which will change depending on whether the target surface treatment is performed properly or not. Can be adopted. However, it is not preferable to use an inspection means that has some adverse effect on the surface of the conductor when the surface characteristics are inspected.

【００２７】つぎに、上記したようなエネルギービーム
の照射による導体部の表面処理を行う場合に、回路基板
として、以下に説明するようなものを用いると、好まし
い結果が得られる。導体部の形成個所を含む、エネルギ
ービームが照射される範囲の基板表面を構成する有機材
料として、その他の部分の基板を構成する有機材料より
も、エネルギービームに対する閾値の大きな材料を用い
る。エネルギービームに対する閾値は、樹脂の構成成分
など有機材料の種類によって異なるので、予め、回路基
板に用いる各種有機材料のエネルギービームに対する閾
値を求めておいて、これらの有機材料の中から、前記条
件に合うものを選択して使用する。回路基板の全体は、
回路基板としての要求性能を満足させ得るような通常の
基板材料を用い、エネルギービームが照射される可能性
のある導体部とその周囲の一定範囲の基板部分のみを、
他の基板部分とは別の、前記閾値の大きな材料を用いれ
ばよい。この発明で用いられる閾値の大きな材料として
は、エキシマレーザに対する閾値の高いテフロン（商品
名：デュポン社製、ポリテトラフロオロエチレン）など
が挙げられる。Next, in the case where the conductor portion is surface-treated by irradiating the energy beam as described above, if a circuit board as described below is used, preferable results can be obtained. As the organic material forming the surface of the substrate in the area where the energy beam is irradiated, including the formation portion of the conductor portion, a material having a larger threshold value for the energy beam than the organic material forming the substrate in the other portions is used. Since the threshold for the energy beam differs depending on the type of organic material such as the constituent components of the resin, the threshold for the energy beam of various organic materials used for the circuit board is obtained in advance, and from these organic materials, the above conditions are satisfied. Select and use the one that fits you. The entire circuit board
Using a normal board material that can satisfy the required performance as a circuit board, only the conductor part that may be irradiated with the energy beam and the board part in a certain range around it,
A material having a large threshold value different from that of the other substrate portions may be used. Examples of the material having a large threshold value used in the present invention include Teflon (trade name: manufactured by DuPont, polytetrafluoroethylene) having a high threshold value for excimer laser.

【００２８】閾値の大きな有機材料からなる部分は、回
路基板の所定範囲の表面を覆い、エネルギービームが照
射されたときに、その下方の基板材料に悪影響を与えな
い程度の厚みを有していればよい。通常、閾値の大きな
有機材料は、他の部分を構成する通常の基板材料よりも
コストが高くついたり成形性が劣ったりする場合がある
ので、閾値の大きな有機材料からなる部分は、必要最小
限の範囲に限定しておくのが好ましい。回路基板に、閾
値の大きな有機材料からなる部分と、これよりも閾値の
小さな有機材料からなる部分を形成するには、予め両方
の部分を成形してから、接着、熱融合などの手段で一体
接合してもよいし、いわゆる同時成形によって、成形と
同時に一体化させたり、閾値の大きな有機材料液を、予
め成形された基板の表面に塗布硬化させたりすることも
できる。The portion made of an organic material having a large threshold value covers the surface of a predetermined area of the circuit board and has a thickness that does not adversely affect the board material below the surface when the energy beam is irradiated. Good. In general, an organic material with a large threshold value may be more expensive or inferior in moldability than an ordinary substrate material forming other parts. It is preferable to limit the range. To form a part made of an organic material having a large threshold value and a part made of an organic material having a smaller threshold value on the circuit board, both parts should be molded in advance and then integrated by means such as bonding or heat fusion. They may be joined together, or they may be integrated at the same time as molding by so-called simultaneous molding, or an organic material liquid having a large threshold value may be applied and cured on the surface of a substrate previously molded.

【００２９】[0029]

【作用】回路基板上の導体部表面にエネルギービームを
照射すると、エネルギービームの強さや線量などの照射
条件によって、回路基板に与える作用が異なる。この発
明では、エネルギービームの照射により、以下の作用が
達成されるように、照射条件を決める。When the surface of the conductor on the circuit board is irradiated with the energy beam, the effect exerted on the circuit board varies depending on the irradiation conditions such as the intensity and dose of the energy beam. In the present invention, the irradiation conditions are determined so that the following effects can be achieved by the irradiation of the energy beam.

【００３０】導体部の表面のみを瞬間的に溶融させ、そ
の表面に存在する有機物などからなる汚染物を蒸発させ
て除去する。また、導体部の表面に吸着されているガス
などを解放して表面から除去する。導体部をメッキ形成
した場合に表面に生じる微細な穴を、表面の溶融によっ
て埋め、表面を平滑化する。このような作用を生じさせ
るには、通常、エネルギービームが強いほど良い。Only the surface of the conductor portion is instantaneously melted, and contaminants such as organic substances existing on the surface are evaporated and removed. Further, the gas or the like adsorbed on the surface of the conductor portion is released and removed from the surface. The fine holes generated on the surface when the conductor portion is formed by plating are filled by melting the surface to smooth the surface. A stronger energy beam is usually better for producing such an effect.

【００３１】これに対し、エネルギービームが強すぎる
と、導体部表面の金属材料層と、その下の他の金属材料
層との間で合金が形成される。この合金の形成は、導体
部全体の電気抵抗値を低下させるので、この発明では、
このような合金の形成が起こらない程度に、エネルギー
ビームの強さを抑える。また、導体部表面へのエネルギ
ービーム照射の際に、同時にエネルギービームの一部が
照射されることになる基板材料の表面では、基板材料の
構成物質が飛散して導体部表面に付着する可能性がある
ので、このような基板材料の飛散が抑制される程度に、
エネルギービームの強さを加減する。すなわち、基板材
料のエネルギービームに対する閾値を超えないように、
エネルギービームの強さを抑える。On the other hand, if the energy beam is too strong, an alloy is formed between the metal material layer on the surface of the conductor and the other metal material layer thereunder. Since the formation of this alloy lowers the electric resistance value of the entire conductor portion, in the present invention,
The intensity of the energy beam is suppressed to the extent that such alloy formation does not occur. Moreover, when the energy beam is applied to the conductor surface, the constituent material of the substrate material may be scattered and adhere to the conductor surface on the surface of the substrate material where a part of the energy beam is simultaneously applied. Therefore, to the extent that such scattering of substrate material is suppressed,
Adjust the intensity of the energy beam. That is, so that the threshold for the energy beam of the substrate material is not exceeded,
Suppress the intensity of the energy beam.

【００３２】この発明では、上記のような作用が確実に
達成できるような照射条件でエネルギービームを照射す
るので、導体部の表面処理が良好に行われると同時に、
合金の形成による導体部の特性低下が生じず、電気的接
合信頼性を含む導体部の品質性能に優れた回路基板が得
られることになる。具体的なエネルギービームの照射条
件としては、導体部表面の金属材料層の厚み、熱伝導率
およびエネルギービームに対する閾値を含む材料特性に
合わせて、エネルギービームの波長、エネルギー密度、
ショット数、照射時間、パルス幅、ピークパワーおよび
照射時間を含む少なくともひとつの照射条件を設定して
おくことができる。これらの条件を適宜に組み合わせて
調整すれば、前記した、この発明の目的とする作用を達
成するのに必要なエネルギービームの照射条件を、簡単
かつ確実に適切な範囲に設定することができる。According to the present invention, since the energy beam is irradiated under the irradiation conditions that can surely achieve the above-mentioned action, the surface treatment of the conductor portion is favorably performed, and at the same time,
It is possible to obtain a circuit board in which the characteristics of the conductor portion are not deteriorated due to the formation of the alloy and the quality of the conductor portion including the electrical connection reliability is excellent. As the specific irradiation conditions of the energy beam, the thickness of the metal material layer on the conductor surface, the thermal conductivity, and the material characteristics including the threshold value for the energy beam, the wavelength of the energy beam, the energy density,
At least one irradiation condition including the number of shots, irradiation time, pulse width, peak power and irradiation time can be set. By appropriately combining and adjusting these conditions, it is possible to easily and surely set the irradiation conditions of the energy beam necessary for achieving the intended operation of the present invention to an appropriate range.

【００３３】つぎに、上記のような適切なエネルギービ
ームの照射条件は、予め理論的な考察あるいは実験の結
果から導き出すこともできるが、回路基板の材質構造や
要求性能によって、適切な条件を予め知ることが難しい
場合がある。このような場合、回路基板にエネルギービ
ームを照射したときの、導体部および／またはその周辺
の表面状態の観測結果から、エネルギービームの照射条
件を制御すれば、実際に表面処理されている導体部表面
などの状態に合わせて、最適な照射条件を設定すること
が可能になり、信頼性の高い表面処理が行える。Next, the appropriate energy beam irradiation conditions as described above can be derived in advance from theoretical consideration or experimental results. However, depending on the material structure of the circuit board and the required performance, appropriate conditions can be set in advance. It can be difficult to know. In such a case, if the energy beam irradiation conditions are controlled from the observation result of the surface condition of the conductor part and / or its periphery when the circuit board is irradiated with the energy beam, the conductor part actually surface-treated Optimal irradiation conditions can be set according to the condition of the surface, etc., and highly reliable surface treatment can be performed.

【００３４】エネルギービームの照射を、減圧雰囲気下
で行えば、飛散物の導体部への再付着を少なくできる。
すなわち、減圧雰囲気下では、飛散物と衝突する可能性
のある雰囲気中分子の量が少なくなり、飛散物が大気中
分子と衝突する回数が減るので、導体部への再付着が減
少するのである。エネルギービームによる回路基板の表
面処理を行いながら、エネルギービームが透過する処理
室における透過窓の汚染状態を監視しておけば、透過窓
の汚染や劣化による、処理性能の低下を防ぐことができ
る。透過窓は、回路基板からの飛散物が付着することで
エネルギービームの透過率が低下する。透過窓の汚染程
度に合わせて、エネルギービームの照射条件を調整すれ
ば、回路基板に対して、表面処理に必要なエネルギー量
を確実に照射することができる。透過窓の汚染がひどく
なれば、透過窓を洗浄したり、透過窓を新しいものに変
えればよい。If the irradiation of the energy beam is carried out in a reduced pressure atmosphere, it is possible to reduce the reattachment of scattered particles to the conductor portion.
That is, in a reduced pressure atmosphere, the amount of molecules in the atmosphere that may collide with the scattered matter decreases, and the number of times the scattered matter collides with molecules in the atmosphere decreases, so that reattachment to the conductor portion decreases. . By monitoring the contamination state of the transmission window in the processing chamber through which the energy beam is transmitted while performing the surface treatment of the circuit board with the energy beam, it is possible to prevent deterioration of the treatment performance due to contamination or deterioration of the transmission window. The transmittance of the energy beam is lowered in the transmission window due to the adhered scattered matter from the circuit board. By adjusting the irradiation conditions of the energy beam according to the degree of contamination of the transmission window, the circuit board can be reliably irradiated with the amount of energy required for the surface treatment. If the transmission window becomes severely contaminated, the transmission window may be cleaned or the transmission window may be replaced with a new one.

【００３５】減圧雰囲気中の不純物混入状態を監視して
おけば、不純物混入による処理性能の低下を防ぐことが
できる。回路基板に対して表面処理を行えば、前記した
飛散物の発生によって、雰囲気中の不純物混入量が増え
てくる。不純物は、導体部に再付着する可能性があると
ともに、新たに発生する飛散物と衝突して導体部に再付
着させる原因になる。そこで、不純物の混入量が増えた
ときに、雰囲気中の不純物を除去する雰囲気洗浄処理や
雰囲気交換処理を行えば、処理性能の低下が防げるので
ある。また、不純物の混入量が増えると導体部の表面に
照射されるエネルギー量が少なくなるので、不純物の混
入量に合わせてエネルギービームの照射条件を調整する
ことで、処理性能の低下を防ぐことができる。By monitoring the state of inclusion of impurities in the reduced pressure atmosphere, it is possible to prevent deterioration of processing performance due to inclusion of impurities. When the surface treatment is performed on the circuit board, the amount of impurities mixed in the atmosphere increases due to the generation of the scattered substances. Impurities may redeposit on the conductor portion and may cause newly scattered particles to collide with and reattach to the conductor portion. Therefore, when the amount of impurities mixed in is increased, an atmosphere cleaning process or an atmosphere exchange process for removing impurities in the atmosphere can be performed to prevent deterioration in processing performance. Further, as the amount of impurities mixed in increases, the amount of energy radiated to the surface of the conductor decreases, so adjusting the irradiation conditions of the energy beam according to the amount of impurities mixed in can prevent deterioration of processing performance. it can.

【００３６】減圧雰囲気中の不純物混入状態を監視する
手段として、減圧雰囲気のガス組成を測定する方法、減
圧雰囲気のレーザ光透過率を測定する方法、表面処理に
よって発生するプラズマの発光量を測定する方法、減圧
雰囲気の圧力変化を検出する方法が採用できる。これら
の方法は、エネルギービームによる表面処理に悪影響を
与えることが少なく、不純物混入状態を確実に監視する
ことができる。As means for monitoring the state of inclusion of impurities in the reduced pressure atmosphere, a method of measuring the gas composition of the reduced pressure atmosphere, a method of measuring the laser light transmittance of the reduced pressure atmosphere, and the amount of light emitted from plasma generated by the surface treatment are measured. The method and the method of detecting the pressure change of the reduced pressure atmosphere can be adopted. These methods have little adverse effect on the surface treatment with the energy beam, and can reliably monitor the mixed state of impurities.

【００３７】表面処理が行われた回路基板に対して、導
体部の表面特性を検査して処理結果を評価すれば、表面
処理された導体部の表面に悪影響を与えることなく、処
理結果を評価することができる。前記した、導体部の周
辺の基板材料にエネルギービームが照射されて、基板材
料が飛散し導体部表面に付着するという問題を解決する
には、回路基板として、有機材料からなる基板上に、複
数の金属材料層を積層した導体部が形成されてなる回路
基板であって、導体部の形成個所を含む、エネルギービ
ームが照射される範囲の基板表面を構成する有機材料
が、その他の部分の基板を構成する有機材料よりも、エ
ネルギービームに対する閾値の大きな材料で形成されて
いるものを用いることが有効である。If the surface characteristics of the conductor portion of the circuit board subjected to the surface treatment are inspected and the treatment result is evaluated, the treatment result can be evaluated without adversely affecting the surface of the conductor portion subjected to the surface treatment. can do. In order to solve the above-mentioned problem that the substrate material around the conductor is irradiated with the energy beam and the substrate material is scattered and adheres to the surface of the conductor, as a circuit board, a plurality of substrates are formed on an organic material substrate. A circuit board formed by laminating a conductor part of a metal material layer, wherein the organic material forming the surface of the substrate in the area irradiated with the energy beam, including the formation part of the conductor part, is the substrate of the other part. It is effective to use a material formed of a material having a larger threshold value for the energy beam than the organic material constituting the.

【００３８】エネルギービームに対する閾値の大きな材
料からなる部分の基板表面にエネルギービームが照射さ
れたとしても、材料の飛散は生じない。閾値の大きな材
料で、回路基板の全体を製造すると、回路基板としての
他の性能や特性に劣るものとなったり、コストが高くつ
いたりする心配があるが、エネルギービームが照射され
る範囲の基板表面を構成する材料のみに、閾値の大きな
材料を用いるのであれば、回路基板全体の性能を損なう
心配はなく、材料コストが高くつく心配もない。Even if the energy beam is applied to the surface of the substrate that is made of a material having a large threshold value for the energy beam, the material is not scattered. If the entire circuit board is manufactured using a material with a large threshold value, it may be inferior to other performances and characteristics as a circuit board, or the cost may be high. If a material having a large threshold value is used only as the material forming the surface, there is no fear of impairing the performance of the entire circuit board, and there is no concern that the material cost will be high.

【００３９】[0039]

【実施例】ついで、この発明の実施例について、図面を
参照しながら以下に説明する。 〔基本的な実施例〕図２(a) (b) は、回路基板の具体例
として、ＰＧＡ基板を表している。変性ポリイミド樹脂
からなる矩形板状の回路基板１０には、上面中央に小さ
な矩形状に凹入されたキャビィティ１２が形成されてい
る。このキャビィティ１２に、半導体チップ（図示せ
ず）が収容される。回路基板１０の下面には、多数の端
子ピン１４が全面にわたって植えられており、この端子
ピン１４を、外部の基板などに設けられた端子孔に突き
刺して、電気的な接続を果たす。端子ピン１４は、回路
基板１０の内部あるいは表面に形成された導体回路に接
続されている。キャビィティ１２の四方周辺には、小さ
な短冊状をなすインナーリード２０が多数並んで形成さ
れている。このインナーリード２０は、端子ピン１４に
接続された導体回路につながっている。また、キャビィ
ティ１２に収容された半導体チップの各端子がインナー
リード２０に接続される。このインナーリード２０が、
導体金属からなる導体部となっている。Embodiments of the present invention will be described below with reference to the drawings. [Basic Example] FIGS. 2A and 2B show a PGA board as a specific example of the circuit board. A rectangular plate-shaped circuit board 10 made of a modified polyimide resin has a cavity 12 formed in a small rectangular recess at the center of the upper surface. A semiconductor chip (not shown) is housed in this cavity 12. A large number of terminal pins 14 are planted over the entire surface of the lower surface of the circuit board 10. The terminal pins 14 are pierced into terminal holes provided in an external board or the like to establish electrical connection. The terminal pin 14 is connected to a conductor circuit formed inside or on the surface of the circuit board 10. Around the four sides of the cavity 12, a large number of small strip-shaped inner leads 20 are formed side by side. The inner lead 20 is connected to the conductor circuit connected to the terminal pin 14. Further, each terminal of the semiconductor chip housed in the cavity 12 is connected to the inner lead 20. This inner lead 20
It is a conductor portion made of a conductor metal.

【００４０】図１(a) には、インナーリードすなわち導
体部２０の周辺部分の拡大断面を表している。導体部２
０は、基板１０の上に銅箔２６を張り、その上に、ニッ
ケル層２４および金層２２を、それぞれメッキで形成し
ている。したがって、導体部２０の表面を構成する金属
材料層は金層２２である。金層２２の厚みは、数μｍ程
度に形成されている。FIG. 1A shows an enlarged cross section of the inner lead, that is, the peripheral portion of the conductor portion 20. Conductor part 2
In No. 0, a copper foil 26 is placed on the substrate 10, and a nickel layer 24 and a gold layer 22 are formed on each by plating. Therefore, the metal material layer forming the surface of the conductor portion 20 is the gold layer 22. The gold layer 22 has a thickness of about several μm.

【００４１】図１(b) に示すように、回路基板１０の導
体部２０表面に対して、エネルギービームとしてＫｒＦ
エキシマレーザ（波長：λ＝２４８nm）Ｒを照射した。
レーザビームＲは、図２において、多数の導体部２０が
並んだ領域を含む概略長方形状の範囲を走査するように
照射した。したがって、導体部２０の周辺および間の基
板１０表面にも、ある程度はレーザビームＲが照射され
ることになる。レーザのエネルギー密度は、０．５〜
３．０ J/cm2程度の範囲で調整し、ショット数は１〜１
０ショットの範囲で調整した。エネルギー密度やショッ
ト数を変えて、繰り返し実験を行い、最も良好な表面処
理効果が得られる照射条件を見い出した。As shown in FIG. 1 (b), KrF as an energy beam is applied to the surface of the conductor portion 20 of the circuit board 10.
Excimer laser (wavelength: λ = 248 nm) R was irradiated.
In FIG. 2, the laser beam R was applied so as to scan a substantially rectangular area including a region where a large number of conductors 20 are arranged. Therefore, the surface of the substrate 10 around and between the conductors 20 is also irradiated with the laser beam R to some extent. The energy density of the laser is 0.5-
Adjust within the range of 3.0 J / cm 2 and the number of shots is 1 to 1.
It was adjusted within the range of 0 shots. By repeating the experiment by changing the energy density and the number of shots, the irradiation conditions that gave the best surface treatment effect were found.

【００４２】その結果、図１(b) に示すような断面構造
が得られた場合に、良好な効果が達成されることが判っ
た。すなわち、導体部２０の金層２２として、表面の一
部厚み部分２３が、レーザ照射によって一旦は溶融した
後、冷却硬化した状態になっている。金層２２が、溶融
層２３と非溶融層２２の２層に分かれているのである。
また、レーザ照射は、金層２２の下のニッケル層２４ま
では到達しておらず、非溶融層２２が存在しているの
で、溶融層２３とニッケル層２４との間で合金が形成さ
れることもない状態である。As a result, it was found that a good effect was achieved when the sectional structure shown in FIG. 1 (b) was obtained. That is, as the gold layer 22 of the conductor portion 20, the partially thick portion 23 on the surface is in a state of being once melted by laser irradiation and then being cooled and hardened. The gold layer 22 is divided into two layers, the molten layer 23 and the non-melted layer 22.
Further, the laser irradiation does not reach the nickel layer 24 below the gold layer 22 and the non-melted layer 22 exists, so that an alloy is formed between the molten layer 23 and the nickel layer 24. It is in a state where nothing happens.

【００４３】処理前および処理後の導体部２０表面を観
察したところ、処理前には微細な凹凸が明確に確認でき
たが、処理後には凹凸がなく平滑な表面になっているこ
とが確認できた。 〔表面の観測を行う実施例：ＣＣＤカメラ〕つぎに、図
３には、回路基板１０の表面を観測しながらエネルギー
ビームＲの照射を行う方法を表している。When the surface of the conductor portion 20 before and after the treatment was observed, fine irregularities were clearly confirmed before the treatment, but it was confirmed that there was no irregularity and a smooth surface after the treatment. It was [Example for Observing Surface: CCD Camera] Next, FIG. 3 shows a method for irradiating the energy beam R while observing the surface of the circuit board 10.

【００４４】前記実施例と同じ回路基板１０を用い、エ
ネルギービームＲも同様であった。レーザ照射装置３０
から照射されたレーザビームＲは、ミラー３２で反射し
た後、回路基板１０の導体部２０表面に照射される。導
体部２０表面からは、汚染物Ｘなどが蒸発除去される。
このような導体部２０の表面状態を、ＣＣＤカメラ４０
で撮影する。ＣＣＤカメラ４０で撮影された映像は、電
子情報として、コンピュータからなる制御装置５０に入
力される。制御装置５０では、映像情報を解析し、その
結果にもとづいて、レーザ照射装置３０の発振回路など
をフィードバック制御する。具体的には、導体部２０の
表面が溶融して、表面光沢が変化する状態を捉えて、レ
ーザ照射装置３０におけるレーザビームＲの照射エネル
ギー密度やショット数が過大にならないように、変更調
整する。なお、表面光沢の変化を観察することは、言い
換えると、表面の反射率を測定していることになる。し
たがって、ＣＣＤカメラの代わりに、反射率計を設けて
おいても、同様の機能を果たすことができる。また、表
面の色の変化から、表面の溶融状態などを知ることもで
きる。この場合には、色度計などを用いることができ
る。ＣＣＤカメラ４０で、映像とともに反射率や色など
を総合的に観察すれば、より正確な制御が可能になる。 〔表面の観測を行う実施例：飛散物検知器〕図４には、
導体部２０の表面状態を観測する方法の別の実施例を表
している。The same circuit board 10 as in the above-mentioned embodiment was used, and the energy beam R was also the same. Laser irradiation device 30
The laser beam R emitted from is reflected by the mirror 32, and is then emitted to the surface of the conductor portion 20 of the circuit board 10. The contaminants X and the like are evaporated and removed from the surface of the conductor portion 20.
The surface state of the conductor portion 20 as described above is determined by the CCD camera 40.
To shoot. The image captured by the CCD camera 40 is input as electronic information to the control device 50 including a computer. The control device 50 analyzes the image information, and feedback-controls the oscillation circuit of the laser irradiation device 30 based on the result. Specifically, the state in which the surface of the conductor portion 20 is melted and the surface gloss is changed is captured, and change adjustment is performed so that the irradiation energy density of the laser beam R and the number of shots in the laser irradiation device 30 do not become excessive. . In addition, observing the change in surface gloss means, in other words, measuring the reflectance of the surface. Therefore, even if a reflectometer is provided instead of the CCD camera, the same function can be achieved. Further, the melted state of the surface can be known from the change in the color of the surface. In this case, a chromaticity meter or the like can be used. If the CCD camera 40 comprehensively observes the reflectance and color along with the image, more accurate control becomes possible. [Example of Surface Observation: Scatterer Detector] FIG.
9 shows another embodiment of the method for observing the surface state of the conductor portion 20.

【００４５】この実施例では、ＣＣＤカメラ４０の代わ
りに、飛散物検知器４２を用いている。飛散物検知器４
２は、導体部２０の表面から雰囲気中に飛散するガスや
金属蒸気などの物質Ｘを取り込んで、そこに含まれる成
分を検知分析する装置である。飛散物検知器４２で得ら
れた成分分析結果に、導体部２０表面の合金化を示すよ
うな情報が含まれるようになると、制御装置５０でレー
ザ照射装置３０を制御して、レーザビームＲのエネルギ
ー密度を小さくしたり、ショット数を少なくしたりす
る。また、飛散物検知器４２で、金の蒸発を検知した状
態を、レーザビームＲの照射の限度とすればよい。 〔回路基板の構造が異なる実施例〕つぎに、図５には、
この発明の表面処理方法に適した回路基板１０の構造を
表している。図５は、前記図１などとは直交する方向の
断面を示している。In this embodiment, a scattered object detector 42 is used instead of the CCD camera 40. Scattered matter detector 4
Reference numeral 2 is an apparatus that takes in a substance X such as gas or metal vapor scattered from the surface of the conductor portion 20 into the atmosphere, and detects and analyzes the components contained therein. When the component analysis result obtained by the scattered matter detector 42 includes information indicating alloying of the surface of the conductor portion 20, the controller 50 controls the laser irradiation device 30 to control the laser beam R. Reduce the energy density or the number of shots. Further, the state where the scattered object detector 42 detects the evaporation of gold may be set as the limit of the irradiation of the laser beam R. [Example in which the structure of the circuit board is different] Next, in FIG.
1 shows a structure of a circuit board 10 suitable for the surface treatment method of the present invention. FIG. 5 shows a cross section in a direction orthogonal to FIG.

【００４６】複数本の導体部２０が一定間隔毎に並んで
設けられている。これら複数の導体部２０に対して、連
続してレーザビームＲの照射を行う。したがって、レー
ザビームＲは、導体部２０の表面から、導体部２０同士
の間の基板表面にわたって照射されることになる。回路
基板１０は、全体的には前記した変性ポリイミド樹脂で
形成されているが、導体部１０の形成個所とその間の表
面部分１６のみが、エキシマレーザに対する閾値の大き
なテフロンで形成されている。すなわち、このテフロン
部分１６に、所定の閾値以下のレーザビームＲを照射し
ても、表面から樹脂成分が飛散することはない。したが
って、前記した各実施例では、変性ポリイミド樹脂から
なる回路基板１０からの樹脂の飛散が生じないように、
レーザビームＲの照射条件を抑える必要があったのに対
し、この実施例では、それよりもはるかに強いレーザビ
ームＲの照射条件が採用できることになる。その結果、
導体部２０の表面に対する表面処理効果を高めたり、処
理時間を短くしたりすることが可能になる。 〔減圧雰囲気下で処理を行う実施例〕図６に示すよう
に、気密構造を備えた減圧処理室６０に、回路基板１０
が収容される。減圧処理室６０には、真空ポンプ６４が
接続されていて、減圧処理室６０内の空気を排気して減
圧雰囲気に維持できるようになっている。減圧処理室６
０のうち、レーザビームＲの照射経路となる個所には、
レーザビームＲを透過させる合成石英からなる透過窓６
２が設けられている。 〔透過窓の汚染状態を監視する実施例〕図７に示すよう
に、減圧処理室６０内で回路基板１０と並ぶ位置にエネ
ルギー量の検出器６５を設けている。検出器６５で得ら
れた測定情報は、コンピュータを備えた制御装置５０に
入力される。ミラー３２などの光学系を制御すること
で、レーザビームＲを、回路基板１０および検出器６５
の何れかに選択的に照射することができる。回路基板１
０および検出器６５の何れかを選択的に移動させて、レ
ーザビームＲの当たる位置に配置するようにしてもよ
い。A plurality of conductor portions 20 are provided side by side at regular intervals. The plurality of conductor portions 20 are continuously irradiated with the laser beam R. Therefore, the laser beam R is emitted from the surface of the conductor 20 over the surface of the substrate between the conductors 20. The circuit board 10 is entirely formed of the modified polyimide resin described above, but only the formation portion of the conductor portion 10 and the surface portion 16 between them are formed of Teflon having a large threshold value for the excimer laser. That is, even if the Teflon portion 16 is irradiated with the laser beam R having a predetermined threshold value or less, the resin component is not scattered from the surface. Therefore, in each of the above-described embodiments, the resin is prevented from scattering from the circuit board 10 made of the modified polyimide resin.
While it was necessary to suppress the irradiation condition of the laser beam R, in this embodiment, the irradiation condition of the laser beam R much stronger than that can be adopted. as a result,
It is possible to enhance the surface treatment effect on the surface of the conductor portion 20 and shorten the treatment time. [Example in which processing is performed in a reduced pressure atmosphere] As shown in FIG. 6, a circuit board 10 is placed in a reduced pressure processing chamber 60 having an airtight structure.
Is housed. A vacuum pump 64 is connected to the depressurization processing chamber 60 so that the air in the depressurization processing chamber 60 can be exhausted to maintain a depressurized atmosphere. Decompression treatment room 6
Of 0, the part which becomes the irradiation path of the laser beam R,
Transmission window 6 made of synthetic quartz for transmitting the laser beam R
Two are provided. [Example of Monitoring Contamination State of Transmission Window] As shown in FIG. 7, an energy amount detector 65 is provided in the depressurization processing chamber 60 at a position aligned with the circuit board 10. The measurement information obtained by the detector 65 is input to the control device 50 equipped with a computer. By controlling the optical system such as the mirror 32, the laser beam R is emitted to the circuit board 10 and the detector 65.
Can be selectively irradiated. Circuit board 1
0 or the detector 65 may be selectively moved so as to be arranged at the position where the laser beam R strikes.

【００４７】照射されるレーザビームＲのエネルギー量
が同じであれば、検出器６５で検出されるエネルギー量
が減るほど、透過窓６２の汚染が進行していることにな
る。透過窓６２の汚染が一定限度を超えれば、制御装置
５０から、透過窓６２を交換したり、透過窓６２を洗浄
するように指令を出すことになる。したがって、透過窓
６２が交換可能に取り付けられているか、透過窓６２の
洗浄手段を備えておくことが好ましい。If the amount of energy of the laser beam R irradiated is the same, the contamination of the transmission window 62 progresses as the amount of energy detected by the detector 65 decreases. When the contamination of the transparent window 62 exceeds a certain limit, the controller 50 issues a command to replace the transparent window 62 or clean the transparent window 62. Therefore, it is preferable that the transmissive window 62 is replaceably attached or that a cleaning means for the transmissive window 62 is provided.

【００４８】検出器６５へのレーザビームＲの照射は、
一定時間毎に定期的に行う。予め、回路基板１０へのレ
ーザ処理個数と透過窓６２の汚染進行との関係を求めて
おけば、ある程度の時間をあけて検出器６５へのレーザ
ビームＲの照射による汚染状態の測定を行うだけで、透
過窓６２の交換時期を予測したり、透過窓６２の汚染状
態に見合うレーザビームＲの照射条件の調整量を知るこ
とができる。Irradiation of the laser beam R to the detector 65
Periodically at regular intervals. If the relationship between the number of laser treatments on the circuit board 10 and the progress of contamination of the transmission window 62 is obtained in advance, the contamination state due to the irradiation of the laser beam R on the detector 65 is measured only after a certain time. Thus, it is possible to predict the replacement time of the transmission window 62 and to know the adjustment amount of the irradiation condition of the laser beam R that matches the contamination state of the transmission window 62.

【００４９】図８に示すフローチャートにしたがって、
制御装置５０における処理制御を行うことができる。ス
テップで処理を開始する。ステップで検出器６５か
らの出力を読み込み、ステップで透過窓６２の透過率
が９０％以下になったと判定されれば、ステップで透
過窓６２の洗浄操作を指示し、ステップの洗浄処理が
終われば、再びステップに戻って検出器６５からの出
力読み込みを行う。ステップで透過率が９０％以上あ
る場合には、ステップで処理終了であるか否かを判断
し、ステップで終了するか、再びステップに戻って
検出器６５からの出力読み込みを行う。 〔透過窓の汚染状態を監視する別の実施例〕図９に示す
ように、検出器６５による透過率の測定を行うレーザビ
ームＲｍを、回路基板１０への表面処理を行うレーザビ
ームＲとは別にしている。透過率測定用のレーザビーム
Ｒｍには、ＹＡＧレーザもしくは半導体レーザが用いら
れ、レーザ照射装置３０ｍから照射される。According to the flow chart shown in FIG.
The processing control in the control device 50 can be performed. The process starts in steps. If the output from the detector 65 is read in the step, and if it is determined that the transmittance of the transmission window 62 is 90% or less in the step, the cleaning operation of the transmission window 62 is instructed in the step, and if the cleaning process in the step is completed. Then, the process returns to the step again to read the output from the detector 65. When the transmittance is 90% or more in the step, it is determined whether or not the process is finished in the step, and the process is finished in the step or returns to the step again to read the output from the detector 65. [Another Example for Monitoring the Contamination State of the Transmission Window] As shown in FIG. 9, the laser beam Rm for measuring the transmittance by the detector 65 is the laser beam R for performing the surface treatment on the circuit board 10. Separately. A YAG laser or a semiconductor laser is used for the laser beam Rm for measuring the transmittance, and the laser beam is irradiated from the laser irradiation device 30m.

【００５０】この実施例では、レーザビームＲによる表
面処理とは別個に、レーザビームＲｍによる透過率の測
定が行えるので、レーザビームＲを回路基板１０と検出
器６５に交互に当てる必要がない。制御装置５０におけ
る処理制御のフローチャートは、前記実施例と同じよう
に行える。 〔不純物混入状態を監視する実施例：ガス組成測定〕図
１０に示すように、減圧処理室６０に、元素分析装置６
６を備えている。元素分析装置６６は、雰囲気内に混入
しているガスをイオン化し、電圧と高周波により質量数
を推定して元素分析を行う四重極質量分析器を用いてい
る。元素分析装置６６で検出する元素として、飛散物の
混入度合いを最も良く示す炭素を分析する。目的とする
元素の検出量は、他の元素の検出量との相対比較によっ
て行う。In this embodiment, since the transmittance of the laser beam Rm can be measured separately from the surface treatment of the laser beam R, it is not necessary to alternately apply the laser beam R to the circuit board 10 and the detector 65. The flowchart of the processing control in the control device 50 can be performed in the same manner as in the above-mentioned embodiment. [Example of Monitoring Impurity Mixing State: Gas Composition Measurement] As shown in FIG.
6 is provided. The elemental analysis device 66 uses a quadrupole mass analyzer that ionizes the gas mixed in the atmosphere and estimates the mass number by voltage and high frequency to perform elemental analysis. As an element to be detected by the element analysis device 66, carbon that shows the best degree of inclusion of scattered matter is analyzed. The detection amount of the target element is determined by relative comparison with the detection amounts of other elements.

【００５１】レーザビームＲを回路基板１０に照射して
表面処理を行っていると、回路基板１０の樹脂部分から
飛散物が発生して減圧処理室６０の雰囲気を汚染する。
飛散物のうちの炭素が元素分析装置６６で検出される。
元素検出のピーク値に変化が生じると、その情報が制御
装置５０に入力され、制御装置５０からは、減圧処理室
６０の雰囲気内洗浄を行うように指令が出される。雰囲
気内洗浄の具体的手段としては、アルコールを用いた超
音波洗浄が採用される。 〔不純物混入状態を監視する実施例：レーザ透過率測
定〕図１１に示すように、表面処理用のレーザビームＲ
を照射するレーザ照射装置３０とは別に、レーザ照射装
置３０ａを備えている。レーザ照射装置３０ａから照射
されたレーザビームＲａは、減圧処理室６０に設けられ
た透過窓６２ａを経て減圧処理室６０内の雰囲気を通過
した後、減圧処理室６０の壁面に設けられた検出器６５
ａで検出される。すなわち、雰囲気中のレーザビームＲ
ａの透過率を測定することになる。雰囲気内の不純物混
入量が多くなるほど、検出器６５ａで検出されるエネル
ギー量は少なくなる。レーザビームＲａとしては、ＹＡ
Ｇレーザや半導体レーザを用いる。レーザビームＲａの
出力を一定にしておき、検出器６５ａにおける出力値
が、発振出力の９０％以下になると、制御装置５０か
ら、減圧処理室６０の雰囲気内洗浄を行うように指令が
出される。 〔不純物混入状態を監視する実施例：プラズマ発光量測
定〕図１２に示すように、減圧処理室６０に設けられた
透過窓６２ｃを通じて回路基板１０の表面処理部分をＣ
ＣＤカメラ４０で観測する。レーザビームＲによる表面
処理が行われると、回路基板１０の近くの空間にプラズ
マＰが発生して発光する。雰囲気中への不純物の混入が
増えると、プラズマＰの発光量が増える。このプラズマ
Ｐの発光状況をＣＣＤカメラ４０で観測するのである。
ＣＣＤカメラ４０で撮影された映像を、電子情報として
制御装置５０に入力する。制御装置５０では、映像情報
を解析し、その結果から雰囲気中への不純物の混入状態
を知ることができる。具体的には、プラズマＰの発光量
が、ピーク発光量の９０％以下になったときに、制御装
置５０から、減圧処理室６０の雰囲気内洗浄を行うよう
に指令が出される。 〔不純物混入状態を監視する実施例：圧力変化測定〕図
１３に示すように、減圧処理室６０に、雰囲気内の圧力
を検出する圧力測定器７０を設けておく。圧力測定器７
０の検出情報は、制御装置５０に入力される。雰囲気中
への不純物の混入が増えれば、雰囲気内の圧力が高くな
る。この圧力が、予め設定された一定限度を超えると、
制御装置５０から、減圧処理室６０の雰囲気内洗浄を行
うように指令が出される。通常、回路基板１０に表面処
理を施す際には、減圧処理室６０の圧力は１×１０-2〜
５×１０-2Torrに設定されるので、圧力測定器７０で測
定される圧力が、この設定圧力範囲を超えたときに、前
記洗浄指令を出すようにすればよい。 〔処理結果の評価方法の実施例：レーザビームの反射特
性〕図１４に示すように、前記した各実施例に記載され
た方法で表面処理が施された回路基板１０に対して、評
価用のレーザ照射装置８０からレーザビームＲｅを照射
し、回路基板１０の表面で反射したレーザビームＲｅを
検出器８２で検出する。このレーザビームＲｅは、回路
基板１０の表面に変化を起こさないような微弱なエネル
ギー量に設定しておく。また、処理済の回路基板１０の
表面を変化させないことから、可視光を用いるのが好ま
しい。When the surface treatment is performed by irradiating the circuit board 10 with the laser beam R, scattered substances are generated from the resin portion of the circuit board 10 and pollute the atmosphere in the decompression processing chamber 60.
Carbon in the scattered matter is detected by the elemental analyzer 66.
When the peak value of element detection changes, the information is input to the control device 50, and the control device 50 issues a command to clean the depressurized processing chamber 60 in the atmosphere. As a specific means for cleaning in the atmosphere, ultrasonic cleaning using alcohol is adopted. [Example of Monitoring Impurity Mixing State: Laser Transmittance Measurement] As shown in FIG. 11, a laser beam R for surface treatment is used.
A laser irradiation device 30a is provided separately from the laser irradiation device 30 for irradiating. The laser beam Ra emitted from the laser irradiation apparatus 30a passes through the transmission window 62a provided in the decompression processing chamber 60, passes through the atmosphere in the decompression processing chamber 60, and then the detector provided on the wall surface of the decompression processing chamber 60. 65
detected in a. That is, the laser beam R in the atmosphere
The transmittance of a will be measured. As the amount of impurities mixed in the atmosphere increases, the amount of energy detected by the detector 65a decreases. The laser beam Ra is YA
A G laser or a semiconductor laser is used. When the output of the laser beam Ra is kept constant and the output value of the detector 65a becomes 90% or less of the oscillation output, the controller 50 issues a command to clean the decompression processing chamber 60 in the atmosphere. [Example of Monitoring Impurity Mixing State: Measurement of Plasma Emission Amount] As shown in FIG. 12, the surface treatment portion of the circuit board 10 is exposed to C through the transmission window 62 c provided in the decompression treatment chamber 60.
Observe with the CD camera 40. When the surface treatment with the laser beam R is performed, plasma P is generated in the space near the circuit board 10 to emit light. When the amount of impurities mixed in the atmosphere increases, the amount of light emitted from the plasma P increases. The light emission status of the plasma P is observed by the CCD camera 40.
An image captured by the CCD camera 40 is input to the control device 50 as electronic information. The control device 50 can analyze the image information and know the mixed state of impurities in the atmosphere from the result. Specifically, when the light emission amount of the plasma P becomes 90% or less of the peak light emission amount, the control device 50 issues a command to clean the decompression processing chamber 60 in the atmosphere. [Example of Monitoring Impurity Mixing State: Pressure Change Measurement] As shown in FIG. 13, the depressurization processing chamber 60 is provided with a pressure measuring device 70 for detecting the pressure in the atmosphere. Pressure measuring instrument 7
The detection information of 0 is input to the control device 50. If the amount of impurities mixed in the atmosphere increases, the pressure in the atmosphere increases. When this pressure exceeds a certain preset limit,
A command is issued from the control device 50 to clean the decompression processing chamber 60 in the atmosphere. Generally, when the surface treatment is applied to the circuit board 10, the pressure in the decompression treatment chamber 60 is 1 × 10 −2 to
Since the pressure is set to 5 × 10 -2 Torr, the cleaning command may be issued when the pressure measured by the pressure measuring device 70 exceeds the set pressure range. [Example of Method for Evaluating Treatment Results: Reflection Characteristics of Laser Beam] As shown in FIG. 14, the circuit board 10 subjected to the surface treatment by the method described in each of the above-mentioned examples was evaluated. A laser beam Re is emitted from the laser irradiation device 80, and the laser beam Re reflected on the surface of the circuit board 10 is detected by the detector 82. The laser beam Re is set to have a weak energy amount that does not cause a change on the surface of the circuit board 10. In addition, it is preferable to use visible light because it does not change the surface of the processed circuit board 10.

【００５２】回路基板１０の表面の凹凸状態によって、
レーザビームＲｅの反射量すなわち検出器８２で検出さ
れるエネルギー量が変化する。具体的には、適切な表面
処理が施された回路基板１０の表面は平滑であるが、処
理前あるいは処理が不十分な回路基板１０の表面には微
細な凹凸が存在している。したがって、良好な表面処理
が行われた回路基板１０の表面は、処理が不十分な表面
よりも検出エネルギー量が大きくなる。Depending on the unevenness of the surface of the circuit board 10,
The amount of reflection of the laser beam Re, that is, the amount of energy detected by the detector 82 changes. Specifically, the surface of the circuit board 10 that has been subjected to an appropriate surface treatment is smooth, but fine irregularities are present on the surface of the circuit board 10 that has not been processed or has not been processed sufficiently. Therefore, the amount of detected energy of the surface of the circuit board 10 that has been subjected to the favorable surface treatment is larger than that of the surface that has not been sufficiently treated.

【００５３】予め、適切な表面処理が行われた回路基板
１０の表面における検出器８２の出力値や、処理前ある
いは処理が不十分な表面における検出器８２の出力値を
調べておけば、表面処理を終えた回路基板１０に、上記
レーザビームＲｅの照射を行うだけで、処理品質を評価
することができる。例えば、レーザビームＲｅの照射エ
ネルギー出力に対して、検出器８２におけるエネルギー
検出量が、半分以下であった場合に、処理不良であると
判定する。If the output value of the detector 82 on the surface of the circuit board 10 that has been appropriately surface-treated and the output value of the detector 82 on the surface before or on the surface that has not been adequately processed are checked beforehand, The processing quality can be evaluated only by irradiating the circuit board 10 that has been processed with the laser beam Re. For example, when the amount of energy detected by the detector 82 is half or less of the irradiation energy output of the laser beam Re, it is determined that the processing is defective.

【００５４】回路基板１０の表面に対するレーザ照射装
置８０と検出器８２の配置、言い換えると、レーザビー
ムＲｅの入射および反射角度によって、回路基板１０の
表面の凹凸状態による反射量の変化が影響を受ける。し
たがって、表面処理の良品と不良品とで反射量に明確な
違いが生じるように、レーザビームＲｅの入射反射角度
を設定しておくのが好ましい。 〔処理結果の評価方法の実施例：表面粗さ〕図１５に示
すように、処理後の回路基板１０に対して、レーザ粗さ
計８４を用いて、表面粗さを測定する。レーザ粗さ計８
４は、照射部８５から回路基板１０の表面に向かってレ
ーザビームＲｒを照射し、その反射光をディテクタ部８
６で捉えることで、表面粗さが測定できる。前記したと
おり、表面粗さが小さなほど、十分な表面処理が行われ
ていることになる。例えば、表面のバラツキが、最大１
〜２μｍ以上ある場合に、処理不良であると判定する。 〔処理結果の評価方法の実施例：Ｘ線の回析〕図１６
(a) に示すように、処理後の回路基板１０に対して、Ｘ
線発振器８７からＸ線Ｒｘを照射し、回路基板１０の表
面で反射したＸ線ＲｘをＸ線ディテクタ８８で検出す
る。回路基板１０の表面の材質あるいは組織構造の違い
によって、Ｘ線ディテクタ８８における出力情報が変わ
る。具体的には、回路基板１０の導体部２０を構成する
金層２２の表面が、表面処理によって図１６(a) に示す
ような溶融層２３になっている場合と、図１６(b) に示
すような合金層２７になっている場合とで、Ｘ線ディテ
クタ８８の出力情報が違ってくる。出力情報から、合金
層２７の形成が認められた場合には、処理不良であると
判定する。The arrangement of the laser irradiation device 80 and the detector 82 on the surface of the circuit board 10, in other words, the incidence and reflection angle of the laser beam Re influences the change in the reflection amount due to the unevenness of the surface of the circuit board 10. . Therefore, it is preferable to set the incident reflection angle of the laser beam Re so that there is a clear difference in the reflection amount between the good surface treatment product and the defective surface treatment product. [Example of Method for Evaluating Treatment Result: Surface Roughness] As shown in FIG. 15, the surface roughness of the treated circuit board 10 is measured using a laser roughness meter 84. Laser roughness meter 8
4 irradiates the laser beam Rr from the irradiation unit 85 toward the surface of the circuit board 10, and reflects the reflected light on the detector unit 8.
By capturing with 6, the surface roughness can be measured. As described above, the smaller the surface roughness, the more sufficient the surface treatment is performed. For example, the maximum surface variation is 1
If it is ˜2 μm or more, it is determined that the processing is defective. [Example of Evaluation Method of Treatment Results: X-ray Diffraction] FIG.
As shown in (a), X is added to the processed circuit board 10.
The X-ray Rx is emitted from the line oscillator 87, and the X-ray Rx reflected on the surface of the circuit board 10 is detected by the X-ray detector 88. The output information from the X-ray detector 88 changes depending on the material of the surface of the circuit board 10 or the difference in the tissue structure. Specifically, in the case where the surface of the gold layer 22 forming the conductor portion 20 of the circuit board 10 is a molten layer 23 as shown in FIG. 16 (a) by the surface treatment and in FIG. 16 (b). The output information of the X-ray detector 88 is different when the alloy layer 27 is formed as shown. When the formation of the alloy layer 27 is recognized from the output information, it is determined that the processing is defective.

【００５５】[0055]

【発明の効果】以上に述べた、この発明にかかる回路基
板上の導体部の表面処理方法によれば、導体部に照射す
るエネルギービームの照射条件を適切に設定することに
より、導体部の表面に良好な表面処理を施し、導体部の
総合的な品質性能を低下させずに、電気的接合信頼性を
向上させることができる。As described above, according to the method of treating the surface of the conductor portion on the circuit board according to the present invention, the surface of the conductor portion can be formed by appropriately setting the irradiation condition of the energy beam for irradiating the conductor portion. It is possible to improve the electrical connection reliability without deteriorating the overall quality performance of the conductor portion by applying a good surface treatment to.

【００５６】その結果、従来のエネルギービームを用い
る乾式表面処理方法の問題点を解消して、導体部に対す
る表面処理を良好に行うことが可能になり、このような
導体部の表面処理が必要とされる半導体製造技術分野な
どの生産性あるいは品質向上に大きく貢献することがで
きる。As a result, the problems of the conventional dry surface treatment method using the energy beam can be solved, and the conductor portion can be favorably surface-treated, and such conductor surface treatment is required. It can greatly contribute to improvement in productivity or quality in the field of semiconductor manufacturing technology.

【図面の簡単な説明】[Brief description of drawings]

【図１】 この発明の実施例を表す回路基板の、表面処
理前（ａ）および表面処理時（ｂ）における断面図FIG. 1 is a sectional view of a circuit board showing an embodiment of the present invention before (a) surface treatment and during (b) surface treatment.

【図２】 回路基板の全体構造を表す、一部拡大図を含
む斜視図（ａ）および導体部周辺の拡大平面図（ｂ）FIG. 2 is a perspective view (a) including a partially enlarged view and an enlarged plan view of a periphery of a conductor portion (b) showing an entire structure of a circuit board.

【図３】 別の実施例を表す処理装置の全体構成図FIG. 3 is an overall configuration diagram of a processing device representing another embodiment.

【図４】 別の実施例を表す処理装置の全体構成図FIG. 4 is an overall configuration diagram of a processing device representing another embodiment.

【図５】 別の実施例を表す回路基板の断面図FIG. 5 is a sectional view of a circuit board showing another embodiment.

【図６】 減圧処理室を備えた処理装置の全体構成図FIG. 6 is an overall configuration diagram of a processing apparatus including a decompression processing chamber.

【図７】 透過窓の汚染監視手段を備えた実施例を表す
処理装置の全体構成図FIG. 7 is an overall configuration diagram of a processing apparatus representing an embodiment including a contamination monitoring device for a transparent window.

【図８】 処理制御の流れ図FIG. 8 is a flow chart of processing control

【図９】 別の実施例を表す処理装置の全体構成図FIG. 9 is an overall configuration diagram of a processing device representing another embodiment.

【図１０】 不純物混入状態の監視手段を備えた実施例
を表す処理装置の全体構成図FIG. 10 is an overall configuration diagram of a processing apparatus that represents an embodiment including a means for monitoring an impurity mixing state.

【図１１】 別の実施例を表す処理装置の全体構成図FIG. 11 is an overall configuration diagram of a processing device representing another embodiment.

【図１２】 別の実施例を表す処理装置の全体構成図FIG. 12 is an overall configuration diagram of a processing device representing another embodiment.

【図１３】 別の実施例を表す処理装置の全体構成図FIG. 13 is an overall configuration diagram of a processing device representing another embodiment.

【図１４】 処理結果の評価方法の実施例を表す概略説
明図FIG. 14 is a schematic explanatory diagram illustrating an example of a method of evaluating a processing result.

【図１５】 別の実施例を表す概略説明図FIG. 15 is a schematic explanatory view showing another embodiment.

【図１６】 別の実施例を表す概略説明図FIG. 16 is a schematic explanatory view showing another embodiment.

【符号の説明】[Explanation of symbols]

１０ 回路基板 ２０ 導体部 ２２ 金層 ２３ 溶融層 ３０ レーザー照射装置 ４０ ＣＣＤカメラ ４２ 飛散物検知器 ５０ 制御装置 ６０ 減圧処理室 ６２ 透過窓 Ｒ レーザビーム 10 Circuit Board 20 Conductor Part 22 Gold Layer 23 Melt Layer 30 Laser Irradiation Device 40 CCD Camera 42 Scattered Particle Detector 50 Control Device 60 Decompression Processing Room 62 Transmission Window R Laser Beam

Claims (11)

【特許請求の範囲】[Claims] 【請求項１】 有機材料からなる基板上に、複数の金属
材料層を積層した導体部が形成されてなる回路基板に対
して、導体部表面にエネルギービームを照射して導体部
の表面処理を行う方法において、エネルギービームを、
導体部表面の金属材料層が他の金属材料層との間で合金
を形成することなく導体部に表面処理が施される照射条
件で照射することを特徴とする回路基板上の導体部の表
面処理方法。1. A surface treatment of a conductor portion by irradiating the surface of the conductor portion with an energy beam to a circuit board having a conductor portion in which a plurality of metal material layers are laminated on a substrate made of an organic material. In the method of doing,
The surface of the conductor part on the circuit board is characterized in that irradiation is performed under the irradiation condition that the metal material layer on the surface of the conductor part is surface-treated on the conductor part without forming an alloy with another metal material layer. Processing method. 【請求項２】 請求項１の方法において、エネルギービ
ームの照射条件として、導体部表面の金属材料層の厚
み、熱伝導率およびエネルギービームに対する閾値を含
む材料特性に合わせて、エネルギービームの波長、エネ
ルギー密度、ショット数、照射時間、パルス幅、ピーク
パワーおよび照射時間を含む少なくともひとつの照射条
件を設定しておく回路基板上の導体部の表面処理方法。2. The method according to claim 1, wherein the irradiation conditions of the energy beam include the wavelength of the energy beam in accordance with the material properties including the thickness of the metal material layer on the conductor surface, the thermal conductivity, and the threshold value for the energy beam. A surface treatment method for a conductor portion on a circuit board, wherein at least one irradiation condition including energy density, number of shots, irradiation time, pulse width, peak power and irradiation time is set. 【請求項３】 請求項１の方法において、回路基板にエ
ネルギービームを照射したときの、導体部および／また
はその周辺の表面状態の観測結果から、エネルギービー
ムの照射条件を制御する回路基板上の導体部の表面処理
方法。3. The method according to claim 1, wherein the irradiation condition of the energy beam is controlled from the observation result of the surface state of the conductor part and / or its periphery when the energy beam is irradiated on the circuit board. Surface treatment method for conductor part. 【請求項４】 請求項１〜３の何れかの方法において、
エネルギービームの照射を減圧雰囲気下で行う回路基板
上の導体部の表面処理方法。4. The method according to claim 1, wherein
A method for surface treatment of a conductor portion on a circuit board in which irradiation with an energy beam is performed in a reduced pressure atmosphere. 【請求項５】 請求項４の方法において、減圧雰囲気下
の処理室に収容された回路基板に、処理室に設けられた
透過窓を通してエネルギービームを照射し、エネルギー
ビームによる回路基板の表面処理を行いながら、透過窓
の汚染状態を監視する回路基板上の導体部の表面処理方
法。5. The method according to claim 4, wherein the circuit board housed in the processing chamber under a reduced pressure atmosphere is irradiated with an energy beam through a transmission window provided in the processing chamber, and the surface treatment of the circuit board by the energy beam is performed. A method for surface treatment of a conductor portion on a circuit board, which monitors a contamination state of a transmission window while performing. 【請求項６】 請求項４または５の方法において、エネ
ルギービームによる回路基板の表面処理を行いながら、
減圧雰囲気のガス組成を測定して、減圧雰囲気中の不純
物混入状態を監視する回路基板上の導体部の表面処理方
法。6. The method according to claim 4 or 5, wherein the surface treatment of the circuit board is performed with an energy beam,
A method for surface treatment of a conductor portion on a circuit board, which comprises measuring a gas composition in a reduced pressure atmosphere and monitoring a mixed state of impurities in the reduced pressure atmosphere. 【請求項７】 請求項４〜６の何れかの方法において、
エネルギービームによる回路基板の表面処理を行いなが
ら、減圧雰囲気のレーザ光透過率を測定して、減圧雰囲
気中の不純物混入状態を監視する回路基板上の導体部の
表面処理方法。7. The method according to any one of claims 4 to 6,
A method for surface treatment of a conductor portion on a circuit board, which measures a laser light transmittance in a reduced-pressure atmosphere while monitoring the surface of the circuit board with an energy beam to monitor a mixed state of impurities in the reduced-pressure atmosphere. 【請求項８】 請求項４〜７の何れかの方法において、
エネルギービームによる回路基板の表面処理を行いなが
ら、回路基板にエネルギービームを照射した際に発生す
るプラズマの発光量を測定して、減圧雰囲気中の不純物
混入状態を監視する回路基板上の導体部の表面処理方
法。8. The method according to claim 4, wherein
While performing the surface treatment of the circuit board with the energy beam, measure the amount of plasma emission generated when the circuit board is irradiated with the energy beam, and monitor the state of impurities mixed in the reduced pressure atmosphere. Surface treatment method. 【請求項９】 請求項４〜８の何れかの方法において、
エネルギービームによる回路基板の表面処理を行いなが
ら、減圧雰囲気の圧力変化を検出して、減圧雰囲気中の
不純物混入状態を監視する回路基板上の導体部の表面処
理方法。9. The method according to claim 4, wherein
A surface treatment method for a conductor portion on a circuit board, which detects a pressure change in a reduced-pressure atmosphere and monitors a mixed state of impurities in the reduced-pressure atmosphere while performing surface treatment of the circuit board by an energy beam. 【請求項１０】 請求項１〜９の何れかの方法におい
て、表面処理が行われた回路基板に対して、導体部の表
面特性を検査して処理結果を評価する回路基板上の導体
部の表面処理方法。10. The method according to claim 1, wherein the surface characteristics of the conductor portion of the circuit board subjected to the surface treatment are inspected to evaluate the treatment result. Surface treatment method. 【請求項１１】 請求項１〜１０の何れかの表面処理方
法に用いる回路基板であり、有機材料からなる基板上
に、複数の金属材料層を積層した導体部が形成されてな
る回路基板であって、導体部の形成個所を含む、エネル
ギービームが照射される範囲の基板表面を構成する有機
材料が、その他の部分の基板を構成する有機材料より
も、エネルギービームに対する閾値の大きな材料で形成
されていることを特徴とする回路基板。11. A circuit board for use in the surface treatment method according to claim 1, wherein a conductor part formed by laminating a plurality of metal material layers is formed on a substrate made of an organic material. Therefore, the organic material that forms the substrate surface in the range where the energy beam is irradiated, including the formation part of the conductor, is formed of a material that has a larger threshold for the energy beam than the organic material that forms the substrate in other parts. A circuit board characterized by being provided.
JP8211994A 1993-07-27 1994-04-20 Surface treatment method for conductor on circuit board and circuit board Expired - Lifetime JP3133212B2 (en)

Priority Applications (1)

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JP8211994A JP3133212B2 (en) 1993-07-27 1994-04-20 Surface treatment method for conductor on circuit board and circuit board

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Application Number Priority Date Filing Date Title
JP18469193 1993-07-27
JP5-184691 1993-07-27
JP8211994A JP3133212B2 (en) 1993-07-27 1994-04-20 Surface treatment method for conductor on circuit board and circuit board

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JPH07122525A true JPH07122525A (en) 1995-05-12
JP3133212B2 JP3133212B2 (en) 2001-02-05

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JP2009088122A (en) * 2007-09-28 2009-04-23 Dainippon Printing Co Ltd Conductive substrate
JP2017098302A (en) * 2015-11-18 2017-06-01 浜松ホトニクス株式会社 Method of cleaning electrode and method of manufacturing integrated circuit device
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