JPH07122502A - Plasma machining device - Google Patents
Plasma machining deviceInfo
- Publication number
- JPH07122502A JPH07122502A JP5285756A JP28575693A JPH07122502A JP H07122502 A JPH07122502 A JP H07122502A JP 5285756 A JP5285756 A JP 5285756A JP 28575693 A JP28575693 A JP 28575693A JP H07122502 A JPH07122502 A JP H07122502A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conductive ring
- plasma processing
- processing apparatus
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラズマ加工装置に関
し、特に、加工品質を向上させた平行平板型プラズマ加
工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a parallel plate type plasma processing apparatus having improved processing quality.
【０００２】[0002]
【従来の技術】図４は、この種従来のプラズマ加工装置
の断面図である。同図に示されるように、真空室９の上
部開口部には傘状の絶縁部材６が固着されており、該絶
縁部材内には上部電極５およびガス噴出板４が配置され
ており、また、その上部管状部にはガス・高周波印加管
７が挿通されている。上部電極５にはガス・高周波印加
管７を介して高周波電源１０より高周波電力が供給され
る。真空室９の底面には被加工対象であるウェハ１を支
持する下部電極２が固定され、真空室を介して接地され
ている。真空室９にはまたウェハ昇降機構３が上下動自
在に保持されており、真空室９底面には排気ポート８が
備えられている。2. Description of the Related Art FIG. 4 is a sectional view of a conventional plasma processing apparatus of this type. As shown in the figure, an umbrella-shaped insulating member 6 is fixed to the upper opening of the vacuum chamber 9, and an upper electrode 5 and a gas ejection plate 4 are arranged in the insulating member. The gas / high frequency applying tube 7 is inserted through the upper tubular portion. High frequency power is supplied to the upper electrode 5 from a high frequency power source 10 via a gas / high frequency applying tube 7. A lower electrode 2 supporting a wafer 1 to be processed is fixed to the bottom surface of the vacuum chamber 9 and grounded via the vacuum chamber. The wafer raising / lowering mechanism 3 is held in the vacuum chamber 9 so as to be vertically movable, and the exhaust port 8 is provided on the bottom surface of the vacuum chamber 9.
【０００３】プロセスガスを、ガス・高周波印加管７を
介して供給し、上部電極５に取り付けられたガス噴出板
４を通して、真空室９に導入する。真空室９のプロセス
ガスは、排気ポート８を介して図示しない真空排気ポン
プにより排気される。高周波電力がガス・高周波印加管
７を介して上部電極５に供給されると、上部電極５と対
向する下部電極２との間でプラズマが発生し、このプラ
ズマを用いてウエハ１の表面を加工する。例えば、プロ
セスガスとしてシラン、酸素混合ガス（ＳｉＨ4 ＋Ｏ
2 ）を用いることによって、ウエハ１の表面にＳｉＯ2
膜を成膜する。また、プロセスガスとしてハロゲン系ガ
スを用いることによってウエハ１の表面をエッチングす
る。A process gas is supplied through a gas / high frequency application tube 7 and introduced into a vacuum chamber 9 through a gas ejection plate 4 attached to an upper electrode 5. The process gas in the vacuum chamber 9 is exhausted through the exhaust port 8 by a vacuum exhaust pump (not shown). When high-frequency power is supplied to the upper electrode 5 through the gas / high-frequency applying tube 7, plasma is generated between the upper electrode 5 and the lower electrode 2 facing the upper electrode 5, and the surface of the wafer 1 is processed using this plasma. To do. For example, silane as a process gas, an oxygen mixed gas (SiH 4 + O
2 ) is used to form SiO 2 on the surface of the wafer 1.
Form a film. Further, the surface of the wafer 1 is etched by using a halogen-based gas as the process gas.
【０００４】[0004]
【発明が解決しようとする課題】この従来のプラズマ加
工装置における下部電極近傍のプラズマ密度分布を図５
（ａ）に示す。横軸は下部電極上の水平方向位置であ
り、縦軸は、その位置におけるプラズマ密度である。図
に示すように、一般に下部電極中心付近においてプラズ
マ密度は最大となり、中心から遠ざかるにしたがって次
第に低下し、下部電極外周から外側では極端に低下する
傾向にある。これは、上部電極と下部電極の大きさが有
限であることに起因する。すなわち、電極外周部では、
中心部と異なり、電界が電極外側に発散するため、単位
面積あたりの電界密度が低くなるのである。而して、こ
の電界密度の大小は直接的にプラズマ密度の大小に影響
を与え、そしてこのプラズマ密度の大小は加工強度に大
きく影響を及ぼす。従って、電界密度の不均一はプラズ
マ加工品質の不均一を生むこととなり、例えば、前述し
たＳｉＯ2 膜の成膜プロセスにおいては、電極中心と電
極外周部とでは成膜速度が異なることになる。FIG. 5 shows the plasma density distribution in the vicinity of the lower electrode in this conventional plasma processing apparatus.
It shows in (a). The horizontal axis is the horizontal position on the lower electrode, and the vertical axis is the plasma density at that position. As shown in the figure, generally, the plasma density is maximized near the center of the lower electrode, gradually decreases with distance from the center, and tends to extremely decrease outside the outer circumference of the lower electrode. This is because the sizes of the upper electrode and the lower electrode are finite. That is, in the electrode outer peripheral portion,
Unlike the central part, the electric field diverges to the outside of the electrode, so that the electric field density per unit area becomes low. Thus, the magnitude of the electric field density directly affects the magnitude of the plasma density, and the magnitude of the plasma density greatly affects the processing strength. Therefore, the nonuniformity of the electric field density causes the nonuniformity of the plasma processing quality. For example, in the above-described SiO 2 film forming process, the film forming rate is different between the electrode center and the electrode outer peripheral portion.
【０００５】[0005]
【課題を解決するための手段】上記問題点を解決するた
め、本発明によれば、ガス導入口（７）およびガス排出
口（８）を有する真空室内に、高周波電力の供給される
平板状の第１の電極（５）と接地された平板状の第２の
電極（２）とが対向して配置されているプラズマ加工装
置において、前記第１の電極の外側の前記第１の電極と
前記第２の電極との間には接地されたリング状の導電体
（１１）が配置されていることを特徴とするプラズマ加
工装置が提供される。In order to solve the above-mentioned problems, according to the present invention, a flat plate shape to which high frequency power is supplied is provided in a vacuum chamber having a gas inlet (7) and a gas outlet (8). A first electrode (5) and a grounded flat plate-shaped second electrode (2) are arranged to face each other. A plasma processing apparatus is provided in which a grounded ring-shaped conductor (11) is disposed between the second electrode and the second electrode.
【０００６】[0006]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は、本発明の一実施例のプラズマ加工
装置の縦断面図である。上部電極５の外周に絶縁部材６
を取り付け、絶縁部材６を挾むように導電性リング１１
を導電性リング取り付けネジ１２にて取り付ける。ま
た、導電性リング１１は、導電性リング接地金具１３に
より電気的に接地されている。導電性リング接地金具１
３は、ネジ止めあるいはスポット溶接にて真空室９に固
着されている。絶縁部材６内の上部電極５下にはガス噴
出板４が配置され、絶縁部材６の上部管状部には、高周
波電源１０に接続されたガス・高周波印加管７が挿通さ
れている。真空室９の底面には被加工対象であるウェハ
１を支持する下部電極２が固定され、また、ウェハ昇降
機構３および排気ポート８が備えられている。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a vertical sectional view of a plasma processing apparatus according to an embodiment of the present invention. An insulating member 6 is provided on the outer periphery of the upper electrode 5.
Attach the conductive ring 11 so that the insulating member 6 is sandwiched.
Is attached with the conductive ring attaching screw 12. The conductive ring 11 is electrically grounded by the conductive ring grounding fitting 13. Conductive ring grounding fitting 1
3 is fixed to the vacuum chamber 9 by screwing or spot welding. The gas ejection plate 4 is arranged below the upper electrode 5 in the insulating member 6, and the gas / high frequency applying pipe 7 connected to the high frequency power source 10 is inserted into the upper tubular portion of the insulating member 6. A lower electrode 2 supporting a wafer 1 to be processed is fixed to the bottom surface of the vacuum chamber 9, and a wafer elevating mechanism 3 and an exhaust port 8 are provided.
【０００７】図２に上部電極の組み立て分解図を示す。
同図に示されるように、上部電極５およびガス噴出板４
は、絶縁部材６内に収容されており、そして導電性リン
グ１１は絶縁部材６に被せられ、導電性リング取り付け
ネジ１２により固定されている。その際、図１に示され
るように、導電性リング１１は、ガス噴出板４の底面よ
り下へ袴状に突出するように取り付けられる。この袴状
に突出する長さは所望の電界強度分布に応じて適宜決定
される。FIG. 2 shows an exploded view of the upper electrode.
As shown in the figure, the upper electrode 5 and the gas ejection plate 4
Are housed in the insulating member 6, and the conductive ring 11 is covered on the insulating member 6 and fixed by the conductive ring mounting screw 12. At that time, as shown in FIG. 1, the conductive ring 11 is attached so as to project in a hakama shape below the bottom surface of the gas ejection plate 4. The length of the hakama-like protrusion is appropriately determined according to the desired electric field strength distribution.
【０００８】図３は、本実施例における導電性リング１
１の構成例を示す。図３（ａ）に示すものは、円筒状の
導電性部材であり、例えばアルミニウムやステンレス鋼
などで形成される。図３（ｂ）に示すものは、円筒状の
側面に穴を複数個開口している。図３（ｃ）には網状の
円筒が示され、図３（ｄ）には円筒状導電性部材の下部
を短冊状乃至簾状に加工したものが示されている。導電
性リング１１が下部電極２付近にまで張り出す場合に
は、上部電極５と下部電極５との間のプロセスガスの通
気性が悪化し、プラズマ加工自体の特性に影響を与える
ことになる。例えば、薄膜成膜時においては、膜組成の
変化やばらつきあるいは成膜速度の低下等が起こる。図
３（ｂ）乃至（ｄ）に示す導電性リングでは、上部電極
と下部電極との間のプロセスガスの通気性を確保しつ
つ、後述する、電極外周部の電界補強効果によりプラズ
マ密度の均一化を図ることができる。FIG. 3 shows a conductive ring 1 according to this embodiment.
1 shows an example configuration. FIG. 3A shows a cylindrical conductive member, which is made of, for example, aluminum or stainless steel. In the structure shown in FIG. 3B, a plurality of holes are opened on the cylindrical side surface. FIG. 3 (c) shows a net-like cylinder, and FIG. 3 (d) shows a cylindrical conductive member whose lower portion is processed into a strip shape or a blind shape. When the conductive ring 11 extends to the vicinity of the lower electrode 2, the gas permeability of the process gas between the upper electrode 5 and the lower electrode 5 deteriorates, which affects the characteristics of the plasma processing itself. For example, when a thin film is formed, a change or variation in film composition, a decrease in film forming rate, or the like occurs. In the conductive ring shown in FIGS. 3B to 3D, the permeability of the process gas between the upper electrode and the lower electrode is ensured, and at the same time, the plasma density is made uniform by the electric field reinforcing effect of the electrode outer periphery, which will be described later. Can be realized.
【０００９】本実施例の装置においても、従来例の場合
と同様に、真空排気ポンプにて排気された真空室９内に
ガス・高周波印加管７を介してプロセスガスを導入し、
上部電極５に高周波電力を供給することによって、上部
電極５と下部電極２との間にプラズマを発生させ、ウエ
ハ１上に所望の加工を施す。Also in the apparatus of this embodiment, as in the case of the conventional example, the process gas is introduced into the vacuum chamber 9 evacuated by the vacuum exhaust pump through the gas / high frequency applying pipe 7,
By supplying high frequency power to the upper electrode 5, plasma is generated between the upper electrode 5 and the lower electrode 2, and the desired processing is performed on the wafer 1.
【００１０】図５（ｂ）は、本発明のプラズマ加工装置
における下部電極近傍のプラズマ密度分布を示してい
る。前述した従来例のプラズマ密度分布を示す図５
（ａ）と比較して電極外周部でプラズマ密度が強化さ
れ、電極面中央ではプラズマ密度は均一化されている。
高周波電力が供給されている上部電極は、対向する電気
的に接地された下部電極に向かって電界を発生するとと
もに、上部電極外周に設けられた、電気的に接地された
導電性リングとの間にも電界を発生する。この導電性リ
ングとの間で発生する電界の影響で、電極間内の電界は
電極外周付近で強められる。すなわち、従来例では電極
外周部で発散減衰していた電界が、本実施例では逆に補
強される。この結果、図５（ｂ）に示すように、下部電
極近傍のプラズマ密度は電極外周部において減衰するこ
となく、特にウエハ表面上のプラズマ密度を均一化する
ことができる。導電性リングの張り出し寸法により、電
極外周部の電界の補強量が増減することは、前述した電
界補強の原理から容易に推察できる。すなわち、下部電
極近傍のプラズマ密度分布、特に電極外周部におけるプ
ラズマ密度分布の補正は、導電性リングの張り出し寸法
を変えることによって達成することができる。FIG. 5B shows a plasma density distribution near the lower electrode in the plasma processing apparatus of the present invention. FIG. 5 shows the plasma density distribution of the conventional example described above.
Compared to (a), the plasma density is strengthened at the outer peripheral portion of the electrode, and the plasma density is made uniform at the center of the electrode surface.
The upper electrode, to which high-frequency power is supplied, generates an electric field toward the electrically grounded lower electrode which faces the upper electrode, and is electrically connected to the electrically grounded conductive ring provided on the outer periphery of the upper electrode. Also generates an electric field. Due to the influence of the electric field generated between the conductive ring and the conductive ring, the electric field between the electrodes is strengthened near the outer circumference of the electrodes. That is, the electric field that has been divergently attenuated in the outer peripheral portion of the electrode in the conventional example is reinforced in the present example. As a result, as shown in FIG. 5B, the plasma density in the vicinity of the lower electrode is not attenuated at the electrode outer peripheral portion, and the plasma density on the wafer surface can be made uniform. It can be easily inferred from the above-mentioned principle of electric field reinforcement that the amount of reinforcement of the electric field at the outer peripheral portion of the electrode increases or decreases depending on the overhanging dimension of the conductive ring. That is, the correction of the plasma density distribution in the vicinity of the lower electrode, particularly the plasma density distribution in the outer peripheral portion of the electrode, can be achieved by changing the overhanging dimension of the conductive ring.
【００１１】以上本発明の好ましい実施例について説明
したが、本発明は上記実施例に限定されるものではな
く、特許請求の範囲に記載された本願発明の要旨内にお
いて各種の変更が可能である。例えば、実施例では、導
電性リングは全体が導電性材料により構成されていた
が、必ずしもそのようにする必要はなく、下半分のみを
導電性材料により構成するようにすることができる。ま
た、導電性リングを上部電極側に取り付けていたのに代
え、下部電極側に設けるようにしてもよい。また、実施
例のプラズマ加工装置は、アノードカプリング方式と呼
ばれるウエハをアノード電極側に搭載したものである
が、ウエハをカソード電極側に搭載するカソードカプリ
ング方式のものに対しても同様に本発明を適用すること
ができる。Although the preferred embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications can be made within the scope of the present invention as set forth in the claims. . For example, in the embodiment, the conductive ring is entirely made of the conductive material, but it is not always necessary to do so, and only the lower half can be made of the conductive material. Further, the conductive ring may be provided on the lower electrode side instead of being attached to the upper electrode side. Further, the plasma processing apparatus of the embodiment is one in which a wafer called an anode coupling system is mounted on the anode electrode side, but the present invention is similarly applied to a cathode coupling system in which the wafer is mounted on the cathode electrode side. Can be applied.
【００１２】[0012]
【発明の効果】以上説明したように、本発明による平行
平板型プラズマ加工装置は、高周波電圧の印加される上
部電極と接地された下部電極との間の上部電極の外側
に、接地された導電性リングを設けたものであるので、
本発明によれば、電極外周部での電界強度を補強するこ
とができ、電極面内での電界密度分布を均一ににするこ
とができる。したがって、本発明によれば、被加工物の
面内でのプラズマ密度分布を均一にすることができ、被
加工物の面内全体に均等な加工を施すことが可能にな
る。As described above, in the parallel plate type plasma processing apparatus according to the present invention, the grounded conductive material is provided outside the upper electrode between the upper electrode to which the high frequency voltage is applied and the grounded lower electrode. Since it has a sex ring,
According to the present invention, the electric field strength at the outer peripheral portion of the electrode can be reinforced, and the electric field density distribution within the electrode surface can be made uniform. Therefore, according to the present invention, the plasma density distribution in the surface of the workpiece can be made uniform, and the entire surface of the workpiece can be uniformly processed.
【図１】 本発明の一実施例を示す断面図。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図２】 本発明の一実施例における上部電極の組み立
て分解図。FIG. 2 is an assembly exploded view of the upper electrode according to the embodiment of the present invention.
【図３】 本発明の一実施例における導電性リングの実
施態様を示す斜視図。FIG. 3 is a perspective view showing an embodiment of a conductive ring according to an embodiment of the present invention.
【図４】 従来例の断面図。FIG. 4 is a sectional view of a conventional example.
【図５】 従来例および実施例における、下部電極近傍
でのプラズマ密度分布図。FIG. 5 is a plasma density distribution diagram near the lower electrode in the conventional example and the example.
１ ウエハ ２ 下部電極 ３ ウエハ昇降機構 ４ ガス噴出板 ５ 上部電極 ６ 絶縁部材 ７ ガス・高周波印加管 ８ 排気ポート ９ 真空室 １０ 高周波電源 １１ 導電性リング １２ 導電性リング取り付けネジ １３ 導電性リング接地金具 1 Wafer 2 Lower Electrode 3 Wafer Lifting Mechanism 4 Gas Ejection Plate 5 Upper Electrode 6 Insulating Member 7 Gas / High Frequency Applying Tube 8 Exhaust Port 9 Vacuum Chamber 10 High Frequency Power Supply 11 Conductive Ring 12 Conductive Ring Mounting Screw 13 Conductive Ring Grounding Metal
Claims (5)
空室内に、高周波電力の供給される平板状の第１の電極
と接地された平板状の第２の電極とが対向して配置され
ているプラズマ加工装置において、前記第１の電極の外
側の前記第１の電極と前記第２の電極との間には接地さ
れたリング状の導電体が配置されていることを特徴とす
るプラズマ加工装置。1. A flat plate-shaped first electrode to which high-frequency power is supplied and a grounded flat plate-shaped second electrode are arranged to face each other in a vacuum chamber having a gas inlet and a gas outlet. In the plasma processing apparatus, a grounded ring-shaped conductor is arranged between the first electrode and the second electrode outside the first electrode. apparatus.
空室内に、高周波電力の供給される平板状の第１の電極
と接地された平板状の第２の電極とが対向して配置され
ているプラズマ加工装置において、前記第１の電極の周
囲には該第１の電極を囲みかつ第２の電極側へ袴状に張
り出す形状の接地された導電性リングが配置されている
ことを特徴とするプラズマ加工装置。2. A flat plate-shaped first electrode to which high-frequency power is supplied and a grounded flat plate-shaped second electrode are arranged to face each other in a vacuum chamber having a gas inlet and a gas outlet. In the plasma processing apparatus, a grounded conductive ring having a shape that surrounds the first electrode and projects in a hakama shape toward the second electrode side is arranged around the first electrode. And plasma processing equipment.
外周を覆う絶縁部材に固着されていることを特徴とする
請求項２記載のプラズマ加工装置。3. The plasma processing apparatus according to claim 2, wherein the conductive ring is fixed to an insulating member that covers an outer circumference of the first electrode.
り出した部分には複数の穴が開口されていることを特徴
とする請求項２記載のプラズマ加工装置。4. The plasma processing apparatus according to claim 2, wherein a plurality of holes are formed in at least a portion of the conductive ring that projects like a hakama.
り出した部分は、網状あるいは簾状になされていること
を特徴とする請求項２記載のプラズマ加工装置。5. The plasma processing apparatus according to claim 2, wherein at least a portion of the conductive ring protruding in a hakama shape has a net shape or a blind shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5285756A JPH07122502A (en) | 1993-10-21 | 1993-10-21 | Plasma machining device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5285756A JPH07122502A (en) | 1993-10-21 | 1993-10-21 | Plasma machining device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07122502A true JPH07122502A (en) | 1995-05-12 |
Family
ID=17695650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5285756A Pending JPH07122502A (en) | 1993-10-21 | 1993-10-21 | Plasma machining device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07122502A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (en) * | 1996-05-23 | 1997-12-02 | Sharp Corp | Plasma enhanced chemical vapor deposition system and plasma etching device |
| KR100246859B1 (en) * | 1996-10-24 | 2000-03-15 | 윤종용 | Plasma processing apparatus removing discharge due to second potential |
| JP2003068499A (en) * | 2001-08-29 | 2003-03-07 | Mitsubishi Heavy Ind Ltd | Vacuum cable and vacuum plasma treatment device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01260799A (en) * | 1988-04-12 | 1989-10-18 | Fujitsu Ltd | Plasma device |
| JPH029115A (en) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPH0254922A (en) * | 1988-08-19 | 1990-02-23 | Fuji Electric Co Ltd | Plasma cvd system |
| JPH02246111A (en) * | 1989-03-18 | 1990-10-01 | Semiconductor Energy Lab Co Ltd | Plasma treatment device |
| JPH0469465U (en) * | 1990-10-22 | 1992-06-19 | ||
| JPH04345030A (en) * | 1991-04-30 | 1992-12-01 | Internatl Business Mach Corp <Ibm> | Method of coating substrate with hydrocarbon perfluoride polymer film and coated substrate |
| JPH05163575A (en) * | 1991-12-12 | 1993-06-29 | Nec Corp | Formation of thin film |
-
1993
- 1993-10-21 JP JP5285756A patent/JPH07122502A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01260799A (en) * | 1988-04-12 | 1989-10-18 | Fujitsu Ltd | Plasma device |
| JPH029115A (en) * | 1988-06-28 | 1990-01-12 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPH0254922A (en) * | 1988-08-19 | 1990-02-23 | Fuji Electric Co Ltd | Plasma cvd system |
| JPH02246111A (en) * | 1989-03-18 | 1990-10-01 | Semiconductor Energy Lab Co Ltd | Plasma treatment device |
| JPH0469465U (en) * | 1990-10-22 | 1992-06-19 | ||
| JPH04345030A (en) * | 1991-04-30 | 1992-12-01 | Internatl Business Mach Corp <Ibm> | Method of coating substrate with hydrocarbon perfluoride polymer film and coated substrate |
| JPH05163575A (en) * | 1991-12-12 | 1993-06-29 | Nec Corp | Formation of thin film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (en) * | 1996-05-23 | 1997-12-02 | Sharp Corp | Plasma enhanced chemical vapor deposition system and plasma etching device |
| KR100246859B1 (en) * | 1996-10-24 | 2000-03-15 | 윤종용 | Plasma processing apparatus removing discharge due to second potential |
| JP2003068499A (en) * | 2001-08-29 | 2003-03-07 | Mitsubishi Heavy Ind Ltd | Vacuum cable and vacuum plasma treatment device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101012407B1 (en) | Multiple frequency plasma chamber with grounding capacitor at cathode | |
| US20200312681A1 (en) | Substrate processing apparatus | |
| US6270687B1 (en) | RF plasma method | |
| US7255773B2 (en) | Plasma processing apparatus and evacuation ring | |
| KR100239818B1 (en) | Apparatus for the reactive coating of a substrate | |
| JP4472372B2 (en) | Plasma processing apparatus and electrode plate for plasma processing apparatus | |
| JP2006507662A (en) | Arc suppression method and system in plasma processing system | |
| KR960005831A (en) | Plasma reactor with improved plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter | |
| JP5663056B2 (en) | Plasma processing apparatus and electrode structure | |
| JP2000058518A (en) | Substrate treating device | |
| JP2001035839A (en) | Plasma producing device and semiconductor manufacturing method | |
| JPS6269620A (en) | Plasma processor | |
| JP3411814B2 (en) | Plasma processing equipment | |
| JPH07122502A (en) | Plasma machining device | |
| US20040163595A1 (en) | Plasma processing apparatus | |
| US5997686A (en) | Process for setting a working rate distribution in an etching or plasma CVD apparatus | |
| JP3033787B2 (en) | Plasma processing equipment | |
| JPH06216078A (en) | Equipment and method for capacitive coupling discharge processing of wafer | |
| CN112738968A (en) | Plasma generating device and semiconductor processing equipment | |
| JP3034358B2 (en) | Plasma processing equipment | |
| JPH11149996A (en) | Plasma reactor | |
| KR101173568B1 (en) | Plasma generation apparatus for making radical effectively | |
| JPS61177374A (en) | Method and device for forming film by plasma cvd | |
| JPH11121198A (en) | Plasma generating device | |
| JP2001127055A (en) | Plasma treatment equipment |