JPH07120692B2 - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPH07120692B2 JPH07120692B2 JP1101319A JP10131989A JPH07120692B2 JP H07120692 B2 JPH07120692 B2 JP H07120692B2 JP 1101319 A JP1101319 A JP 1101319A JP 10131989 A JP10131989 A JP 10131989A JP H07120692 B2 JPH07120692 B2 JP H07120692B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- capillary
- wire
- amount
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
- H01L2224/8218—Translational movements
- H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はワイヤーボンディング方法に関し、特に半導体
ペレットの電極が第２ボンディング点となる場合のボン
ディング方法に関する。TECHNICAL FIELD The present invention relates to a wire bonding method, and more particularly to a bonding method when an electrode of a semiconductor pellet serves as a second bonding point.
従来、この種のワイヤーボンディング方法に使用するボ
ンディングアーム部は第７図に示すように、ボンディン
グアーム１と、キャピラリー３と、ボイスコイル８と、
ストッパー９、センサー10とを有しており、ワイヤーボ
ンディングするにあたってはある一定荷重に設定された
キャピラリー３がワイヤー５を介して電極表面にタッチ
した後、あらかじめ時間と出力で設定された超音波振動
を加えるという方法がとられていた。Conventionally, a bonding arm portion used in this type of wire bonding method is, as shown in FIG. 7, a bonding arm 1, a capillary 3, a voice coil 8,
When wire bonding, the capillary 3 having a stopper 9 and a sensor 10 is set to a certain constant load, and after touching the electrode surface via the wire 5, ultrasonic vibration is preset by time and output. The method of adding was taken.
上述した従来のボンディング方法は、キャピラリー３が
ワイヤー５を介して電極にタッチした後、あらかじめ設
定された超音波振動を加える方式となっているので、ペ
レット側の状態により、超音波の伝わり方がばらつくた
め、ワイヤーの潰し量のコントロールが困難となってい
る。たとえば、第５図はペレットの電極を第２ボンディ
ング点とした場合の同一ペレット内での超音波振動によ
る潰れ量を測定したものであるが、潰れ量が２μｍ〜10
μｍとかなりのバラツキを示している。そのため、電極
を第２ボンディング点とするようなボンディング手段を
とらなければならない場合、第６図に示すようなキャピ
ラリー３とペレット６の表面とが電極７以外の地点で衝
突を起してしまうという欠点がある。The above-described conventional bonding method is a method in which the capillary 3 touches the electrode via the wire 5 and then applies a preset ultrasonic vibration. Therefore, the ultrasonic wave may be transmitted depending on the state of the pellet side. Because of variations, it is difficult to control the amount of wire crush. For example, FIG. 5 shows the measured amount of collapse due to ultrasonic vibration in the same pellet when the electrode of the pellet is used as the second bonding point.
It shows a considerable variation of μm. Therefore, if a bonding means that uses the electrode as the second bonding point must be taken, the capillary 3 and the surface of the pellet 6 as shown in FIG. 6 will collide with each other at a point other than the electrode 7. There are drawbacks.
本発明の目的は前記課題を解決したワイヤーボンディン
グ方法を提供することにある。An object of the present invention is to provide a wire bonding method that solves the above problems.
上述した従来のボンディング方法に対して、本発明はキ
ャピラリーがボンディング面にタッチした後のキャピラ
リーの沈み込み量をコントロールするという相違点を有
している。The present invention has a difference from the above-described conventional bonding method in that the amount of sinking of the capillary after the capillary touches the bonding surface is controlled.
前記目的を達成するため、本発明は半導体ペレットの電
極とリード端子間をワイヤーで結線する超音波併用熱圧
着方式のワイヤーボンディング方法において、キャピラ
リーがボンディング面にタッチした後のキャピラリーの
沈み込み量をコントロールする機能を有し、キャピラリ
ーがワイヤーを介してボンディング面にタッチした直後
の高さを基準として、ボンディング時のワイヤーの潰し
量をキャプラリーの沈み込み量でコントロールするもの
である。In order to achieve the above object, the present invention is a wire bonding method of an ultrasonic combined thermocompression bonding method for connecting a wire between an electrode of a semiconductor pellet and a lead terminal, and the amount of sinking of the capillary after the capillary touches the bonding surface. It has a control function and controls the crushed amount of the wire at the time of bonding by the amount of depression of the capillary, based on the height immediately after the capillary touches the bonding surface via the wire.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
（実施例１） 第１図は本発明の実施例１におけるボンディングアーム
部を示す断面図である。ボンディングアーム１は回転軸
２に支持され、キャピラリー３を取り付けている部分と
点対称な位置にボイスコイルモーター４を設けている。
ボイスコイルモーター４は通常図示されていないリニア
スケールにて位置決めされており、ボンディング荷重の
設定用としても使用される。(Embodiment 1) FIG. 1 is a sectional view showing a bonding arm portion in embodiment 1 of the present invention. The bonding arm 1 is supported by the rotary shaft 2, and a voice coil motor 4 is provided at a position point-symmetrical with the portion where the capillary 3 is attached.
The voice coil motor 4 is normally positioned by a linear scale (not shown) and is also used for setting a bonding load.
次に本発明について説明する。図示されないＺ軸駆動源
にてボンディングアーム１を下降させ、キャピラリー３
をワイヤー５を介して半導体ペレット６上の電極７にソ
フトランディングさせる（第２図）。Next, the present invention will be described. The bonding arm 1 is lowered by a Z-axis drive source (not shown), and the capillary 3
Is softly landed on the electrode 7 on the semiconductor pellet 6 through the wire 5 (FIG. 2).
キャピラリー３が電極７にタッチしたならば、ボイスコ
イルモーター４の図示されないリニアスケールに変位が
表われるので、その後直ちにボンディングアーム１の下
降を停止させる。次に超音波を発振させる。超音波振動
によりワイヤー５が変形して、キャピラリー３が沈み込
んでゆくので（第３図）、その変位量が設定値Ｔに達し
たかどうかチェックし、設定値Ｔに達したならば、超音
波を停止させボンディングを終了する。When the capillary 3 touches the electrode 7, a displacement appears on the linear scale (not shown) of the voice coil motor 4, so that the lowering of the bonding arm 1 is stopped immediately thereafter. Next, ultrasonic waves are oscillated. Since the wire 5 is deformed by the ultrasonic vibration and the capillary 3 sinks (Fig. 3), it is checked whether the displacement amount has reached the set value T. The sound wave is stopped and the bonding is completed.
（実施例２） 第４図は本発明の実施例２を示す断面図であり、従来技
術にキャピラリー沈み込み量コントロール機構を追加し
たものである。本実施例はボンディングアーム１と、回
転軸２と、ボンディング荷重用ボイスコイル８と、スト
ッパー９と、センサー10と、沈み込み量コントロール機
構11とから構成されている。この実施例ではキャピラリ
ー３がワイヤー５を介して電極７にタッチした瞬間をセ
ンサー10の出力値の変化でとらえ、ボンディングアーム
１の下降を停止させ、その後超音波を発振させる。キャ
ピラリー３の沈み込み量はセンサー10の出力値でチェッ
クする。沈み込み量が設定量となったなら超音波を止
め、ボンディングを終了する。従って、実施例１と同様
にキャピラリー３の沈み込み量をコントロールするた
め、キャピラリー３を電極面にタッチさせないという利
点がある。(Embodiment 2) FIG. 4 is a sectional view showing Embodiment 2 of the present invention, in which a capillary sinking amount control mechanism is added to the prior art. This embodiment comprises a bonding arm 1, a rotary shaft 2, a bonding load voice coil 8, a stopper 9, a sensor 10, and a sinking amount control mechanism 11. In this embodiment, the moment the capillary 3 touches the electrode 7 via the wire 5 is detected by the change in the output value of the sensor 10, the descent of the bonding arm 1 is stopped, and then the ultrasonic wave is oscillated. The amount of sinking of the capillary 3 is checked by the output value of the sensor 10. When the subduction amount reaches the set amount, the ultrasonic wave is stopped and the bonding is completed. Therefore, since the sinking amount of the capillary 3 is controlled as in the first embodiment, there is an advantage that the capillary 3 is not touched on the electrode surface.
以上説明したように本発明はボンディング時のキャピラ
リー沈み込み量をコントロールすることにより、半導体
ペレットの電極を第２ボンディング点とするようなボン
ディング手段において、キャピラリーによる電極へのダ
メージを防止することができるという効果がある。As described above, according to the present invention, by controlling the amount of sinking of the capillaries during bonding, it is possible to prevent damage to the electrodes by the capillaries in the bonding means in which the electrode of the semiconductor pellet is the second bonding point. There is an effect.
第１図は本発明のボンディング方法に使用するボンディ
ングアーム部の断面図、第２図は半導体ペレットの電極
を第２ボンディング点としたときのキャピラリーが電極
へタッチした状態を示す図、第３図は超音波をかけてキ
ャピラリーが沈み込んだ状態を示す図、第４図は本発明
の実施例を示す断面図、第５図は従来のボンディング方
法によりキャピラリーが半導体ペレットの電極面にタッ
チした後の沈み込み量を測定したデータを示す図、第６
図は従来のボンディング方法によるキャピラリーとペレ
ット表面の衝突状態を示す図、第７図は従来のボンディ
ングアーム部を示す断面図である。 １……ボンディングアーム ２……回転軸、３……キャピラリー ４……ボイスコイルモーター ５……ワイヤー、６……半導体ペレット ７……電極、８……ボイルコイル ９……ストッパー、10……センサーFIG. 1 is a sectional view of a bonding arm portion used in the bonding method of the present invention, and FIG. 2 is a view showing a state where a capillary touches an electrode of a semiconductor pellet when the electrode is used as a second bonding point. Is a diagram showing a state where the capillary is submerged by applying ultrasonic waves, FIG. 4 is a cross-sectional view showing an embodiment of the present invention, and FIG. 5 is a diagram showing the capillary after touching the electrode surface of the semiconductor pellet by a conventional bonding method. Showing the data of measuring the amount of subduction of
FIG. 7 is a diagram showing a collision state between a capillary and a pellet surface by a conventional bonding method, and FIG. 7 is a sectional view showing a conventional bonding arm portion. 1 ... Bonding arm 2 ... Rotation axis, 3 ... Capillary 4 ... Voice coil motor 5 ... Wire, 6 ... Semiconductor pellet 7 ... Electrode, 8 ... Boil coil 9 ... Stopper, 10 ... Sensor
Claims (1)
イヤーで結線する超音波併用熱圧着方式のワイヤーボン
ディング方法において、キャピラリーがボンディング面
にタッチした後のキャピラリーの沈み込み量をコントロ
ールする機能を有し、キャピラリーがワイヤーを介して
ボンディング面にタッチした直後の高さを基準として、
ボンディング時のワイヤーの潰し量をキャピラリーの沈
み込み量でコントロールすることを特徴とするワイヤー
ボンディング方法。1. A wire bonding method using an ultrasonic combined thermocompression bonding method for connecting a wire between a semiconductor pellet electrode and a lead terminal, which has a function of controlling a sinking amount of the capillary after the capillary touches the bonding surface. Then, based on the height immediately after the capillary touches the bonding surface via the wire,
A wire bonding method characterized in that the amount of collapse of the wire during bonding is controlled by the amount of depression of the capillary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1101319A JPH07120692B2 (en) | 1989-04-20 | 1989-04-20 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1101319A JPH07120692B2 (en) | 1989-04-20 | 1989-04-20 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02278846A JPH02278846A (en) | 1990-11-15 |
| JPH07120692B2 true JPH07120692B2 (en) | 1995-12-20 |
Family
ID=14297491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1101319A Expired - Lifetime JPH07120692B2 (en) | 1989-04-20 | 1989-04-20 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120692B2 (en) |
-
1989
- 1989-04-20 JP JP1101319A patent/JPH07120692B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02278846A (en) | 1990-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0713988B2 (en) | Wire bonding method | |
| JPH0233943A (en) | Wire bonding apparatus | |
| JPH03245544A (en) | Wire bonding | |
| JPH07120692B2 (en) | Wire bonding method | |
| KR960002769B1 (en) | Wire bonding method and the apparatus | |
| JP3727616B2 (en) | Wire bonding equipment | |
| US5263630A (en) | Bonding apparatus | |
| JP3230691B2 (en) | Wire bonding method | |
| JPS6341215B2 (en) | ||
| JPH11191568A (en) | Wire-bonding method and device | |
| JP2725116B2 (en) | Wire bonding apparatus and method | |
| JP3221191B2 (en) | Bonding apparatus and bonding method | |
| JPS6256658B2 (en) | ||
| JPH0645413A (en) | Apparatus and method for wire bonding | |
| JPS64811B2 (en) | ||
| JP2860650B2 (en) | Wire bonding method | |
| JP2814608B2 (en) | Wire bonding method | |
| JP2767302B2 (en) | Wire bonding method | |
| JP3389919B2 (en) | Wire bonding apparatus and servo adjustment method used therefor | |
| JP2003273150A (en) | Method and device for wire bonding | |
| JPS61105852A (en) | Wire bonder | |
| JP3265488B2 (en) | Manufacturing method of force / moment detecting device | |
| JPS6224942B2 (en) | ||
| JP2940259B2 (en) | Bonding method | |
| JP3201104B2 (en) | Wire bonder and wire bonding method |