JPH07117607B2 - Color solid-state imaging device - Google Patents
Color solid-state imaging deviceInfo
- Publication number
- JPH07117607B2 JPH07117607B2 JP10386886A JP10386886A JPH07117607B2 JP H07117607 B2 JPH07117607 B2 JP H07117607B2 JP 10386886 A JP10386886 A JP 10386886A JP 10386886 A JP10386886 A JP 10386886A JP H07117607 B2 JPH07117607 B2 JP H07117607B2
- Authority
- JP
- Japan
- Prior art keywords
- imaging device
- light
- state imaging
- film
- light absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title description 20
- 230000031700 light absorption Effects 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、ビデオカメラ等に使用されるカラー固体撮像
装置に関するものである。TECHNICAL FIELD The present invention relates to a color solid-state image pickup device used for a video camera or the like.
（従来の技術） 従来のカラー固体撮像装置は、固体撮像素子の上に接着
剤を用いて色分割フィルタを貼ったり、あるいは、固体
撮像素子の受光面上に色分離フィルタを直接形成してカ
ラー化している。(Prior Art) A conventional color solid-state imaging device has a color-separating filter attached to the solid-state imaging device with an adhesive, or a color-separating filter formed directly on the light-receiving surface of the solid-state imaging device. It has become.
従来のカラー固体撮像装置について、第２図により説明
する。同図はモノクロームの固体撮像素子の受光面上
に、色分離フィルタを直接形成したカラー固体撮像装置
の断面図で、３種類の色分離フィルタ1a,1bおよび1cが
それぞれ中間膜2a,2bおよび2cで覆われて、モノクロー
ムの固体撮像素子のベース膜３の上に順次積層する形で
形成されている。モノクロームの固体撮像素子は、パッ
シベーション膜４の下に、遮光用アルミニウム５で遮光
された２個のポリシリコン電極６および７が酸化膜８の
中に形成され、この酸化膜８の下に、光電変換素子９お
よび上記のポリシリコン電極６および７が転送電極とな
るCCD（Charge Coupled Device）10が形成されている。A conventional color solid-state imaging device will be described with reference to FIG. This figure is a cross-sectional view of a color solid-state imaging device in which a color separation filter is directly formed on the light-receiving surface of a monochrome solid-state imaging device, and three types of color separation filters 1a, 1b and 1c are intermediate films 2a, 2b and 2c, respectively. And is sequentially laminated on the base film 3 of the monochrome solid-state imaging device. In the monochrome solid-state image pickup device, two polysilicon electrodes 6 and 7 shielded by a light shielding aluminum 5 are formed in an oxide film 8 under a passivation film 4, and a photoelectric conversion film is formed under the oxide film 8 by photoelectric conversion. A CCD (Charge Coupled Device) 10 in which the conversion element 9 and the polysilicon electrodes 6 and 7 described above serve as transfer electrodes is formed.
このような構成のカラー固体撮像装置の動作を説明す
る。カラー固体撮像装置に光が照射されると、色分離フ
ィルタ1a,1bおよび1cによって過された限定された波
長帯域の光が、それぞれの光電変換素子９に照射され
る。The operation of the color solid-state imaging device having such a configuration will be described. When the color solid-state image pickup device is irradiated with light, each photoelectric conversion element 9 is irradiated with the light in the limited wavelength band passed by the color separation filters 1a, 1b and 1c.
（発明が解決しようとする問題点） しかしながら、上記のようにモノクロームの固体撮像素
子の受光面に直接形成したり、あるいは接着剤を用いて
貼り合わせる色分離フィルタは、主に有機材料からなる
ため、カラー固体撮像装置のパッケージ封止温度が制限
されるという問題があった。(Problems to be Solved by the Invention) However, the color separation filter that is directly formed on the light receiving surface of the monochrome solid-state imaging device as described above or is bonded by using an adhesive is mainly made of an organic material. However, there is a problem that the package sealing temperature of the color solid-state imaging device is limited.
パッケージの信頼性を高くするには、パッケージ封止温
度を高く設定する方が良く、例えば、フリットシール
は、400℃以上の温度で封止する必要があり、この場合
には有機材料のフィルタは使用できない。In order to improve the reliability of the package, it is better to set the package sealing temperature higher. For example, the frit seal needs to be sealed at a temperature of 400 ° C or higher. In this case, the organic material filter is not used. I can not use it.
本発明は上記の問題点を解決するもので、耐熱性の色分
離フィルタからなるカラー固体撮像装置を提供するもの
である。The present invention solves the above problems and provides a color solid-state imaging device including a heat-resistant color separation filter.
（問題点を解決するための手段） 上記目的を達成するために、本発明のカラー固体撮像装
置は、複数の光電変換素子の上方に形成された厚さの異
なるポリシリコン膜よりなる光吸収膜によって、色分離
フィルタを構成することを特徴とするものである。(Means for Solving the Problems) In order to achieve the above object, a color solid-state imaging device of the present invention includes a light absorption film formed of a polysilicon film having different thicknesses formed above a plurality of photoelectric conversion elements. The color separation filter is constituted by the following.
（作 用） この構成は、光の波長により光吸収膜材料の光吸収係数
が異なることを利用して色分離を行わせたものである。(Operation) In this configuration, color separation is performed by utilizing the fact that the light absorption coefficient of the light absorption film material differs depending on the wavelength of light.
光が物質に入射されると、次式に従って減衰する。When light is incident on a substance, it is attenuated according to the following equation.
Ｉ（ｚ）＝Ｉ（ｏ）exp（−αｚ） ここで、z:光の入射面からの深さ α：光吸収係数 Ｉ（ｏ）：深さｏにおける光強度 Ｉ（ｚ）：深さｚにおける光強度 すなわち、光吸収膜材料の光吸収係数は光の波長により
異なるので、光吸収係数の大きい波長の光は入射面から
浅い所で吸収されてしまうことになる。この効果を利用
し、光吸収係数の小さい波長の光を検出する光電変換素
子の上には厚い光吸収膜を設け、光吸収係数のより大き
い波長の光を検出する光電変換素子の上には薄い光吸収
膜を設けるか、あるいは光吸収膜を設けないことによっ
て色分離を行うことができる。I (z) = I (o) exp (−αz) where z: depth from the incident surface of light α: light absorption coefficient I (o): light intensity at depth o I (z): depth Light intensity at z, that is, the light absorption coefficient of the light absorption film material varies depending on the wavelength of light, so that light of a wavelength having a large light absorption coefficient is absorbed at a shallow place from the incident surface. Utilizing this effect, a thick light absorption film is provided on the photoelectric conversion element that detects light with a wavelength having a small light absorption coefficient, and a thick light absorption film is provided on the photoelectric conversion element that detects light with a wavelength with a larger light absorption coefficient. Color separation can be performed by providing a thin light absorbing film or not providing a light absorbing film.
（実施例） 本発明の一実施例を第１図により説明する。同図は本発
明によるカラー固体撮像装置の断面図で、第２図に示し
た従来例と同じ構成部品には同一記号を付し、その説明
を省略する。(Embodiment) An embodiment of the present invention will be described with reference to FIG. This drawing is a cross-sectional view of a color solid-state imaging device according to the present invention. The same components as those of the conventional example shown in FIG.
本発明によるカラー固体撮像装置は、受光面にパッシベ
ーション膜４を形成する前に、まず、LPCVD（減圧化学
的気相成長法）によりポリシリコン膜を形成した後、全
面にフォトレジストを塗布する。次に、光リソグラフィ
法により、光電変換素子9aの上のフォトレジストを除去
し、残したフォトレジストをマスクとして利用し、上記
のポリシコン膜をエッチングする。次に、残っているフ
ォトレジストを除去すると、光電変換素子9aの上面に光
吸収膜11aが形成される。In the color solid-state imaging device according to the present invention, before forming the passivation film 4 on the light receiving surface, first, a polysilicon film is formed by LPCVD (Low Pressure Chemical Vapor Deposition), and then a photoresist is applied on the entire surface. Next, the photoresist on the photoelectric conversion element 9a is removed by photolithography, and the remaining photoresist is used as a mask to etch the polysilicon film. Next, when the remaining photoresist is removed, the light absorption film 11a is formed on the upper surface of the photoelectric conversion element 9a.
その後、同様な工程を繰返し、光吸収膜11bおよび11cを
順次形成する。その際、LPCVDによりポリシコン膜の厚
さに段差を設けることにより、光吸収膜11a,11bおよび1
1cの厚さをそれぞれ10000Å、5000Åおよび０Åとする
と、それぞれ赤色透過フィルタ、青色遮断フィルタおよ
び全色透過フィルタとなる。Then, similar steps are repeated to sequentially form the light absorption films 11b and 11c. At that time, by providing a step in the thickness of the polysilicon film by LPCVD, the light absorption films 11a, 11b and 1
If the thicknesses of 1c are 10000Å, 5000Å and 0Å respectively, a red transmission filter, a blue cutoff filter and an all-color transmission filter are obtained.
このような構成のカラー固体撮像装置の動作について説
明する。カラー固体撮像装置に光が照射されると、光吸
収膜11cおよび11bの下の光電変換素子9cおよび9bの信号
電荷の差によって青色信号が、光吸収膜11bおよび11aの
下の光電変換素子9bおよび9aの信号電荷の差によって緑
色信号が、また、光吸収膜11aの下の光電変換素子9aの
信号電荷によって赤色信号がそれぞれ取り出される。The operation of the color solid-state imaging device having such a configuration will be described. When the color solid-state imaging device is irradiated with light, a blue signal is generated due to the difference in signal charges between the photoelectric conversion elements 9c and 9b below the light absorption films 11c and 11b, and the photoelectric conversion element 9b below the light absorption films 11b and 11a. A green signal is taken out by the difference between the signal charges of 9 and 9a, and a red signal is taken out by the signal charge of the photoelectric conversion element 9a under the light absorption film 11a.
なお、本実施例では光吸収膜11a,11bおよび11cの材料と
してポリシリコンとしたが、これに限定するものでな
く、光の波長により光吸収係数の異なる性質を持つ材料
ならば何でもよい。Although polysilicon is used as the material for the light absorption films 11a, 11b, and 11c in this embodiment, the material is not limited to this, and any material having a different light absorption coefficient depending on the wavelength of light may be used.
（発明の効果） 以上説明したように、本発明によれば、受光面上に形成
する光吸収膜の厚さを変化させることにより、光の波長
による光吸収係数の相異を利用してフィルタとすること
ができる。また、光吸収膜は、LPCVD技術、光リソグラ
フィ技術を用いて精度良く、しかも低温で形成すること
ができ、さらに、光吸収膜をパッシベーション膜の下に
形成するため、パッシベーション膜を平滑化する必要が
ない。(Effects of the Invention) As described above, according to the present invention, the thickness of the light absorption film formed on the light receiving surface is changed, and thus the filter is utilized by utilizing the difference in the light absorption coefficient depending on the wavelength of light. Can be In addition, the light absorption film can be formed accurately at low temperature by using LPCVD technology and photolithography technology. Furthermore, since the light absorption film is formed under the passivation film, it is necessary to smooth the passivation film. There is no.
さらに、光吸収材料として無機材料が使用できるので、
パッケージ封止温度を高温にすることが可能となり、安
価で信頼性の高いカラー固体撮像装置が得られる。Furthermore, since an inorganic material can be used as the light absorbing material,
The package sealing temperature can be increased, and an inexpensive and highly reliable color solid-state imaging device can be obtained.
第１図は本発明によるカラー固体撮像装置の断面図、第
２図は従来のカラー固体装置撮像の断面図である。 1a,1b,1c……色分離フィルタ、2a,2b,2c……中間膜、３
……ベース膜、４……パッシベーション膜、５……遮光
用アルミニウム、6,7……ポリシリコン電極、８……酸
化膜、9,9a,9b,9c……光電変換素子、10……CCD、11a,1
1b,11c……光吸収膜。FIG. 1 is a sectional view of a color solid-state imaging device according to the present invention, and FIG. 2 is a sectional view of a conventional color solid-state imaging device. 1a, 1b, 1c …… color separation filter, 2a, 2b, 2c …… interlayer film, 3
...... Base film, 4 ...... Passivation film, 5 ...... Aluminum for light shielding, 6,7 ...... Polysilicon electrode, 8 ...... Oxide film, 9,9a, 9b, 9c ...... Photoelectric conversion element, 10 ...... CCD , 11a, 1
1b, 11c …… Light absorbing film.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０４Ｎ 9/07 Ｄ (72)発明者 黒田 隆男 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 (56)参考文献 特開 昭56−165362（ＪＰ，Ａ) 特開 昭59−124763（ＪＰ，Ａ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H04N 9/07 D (72) Inventor Takao Kuroda 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronic Industrial Co., Ltd. (56) References JP-A-56-165362 (JP, A) JP-A-59-124763 (JP, A)
Claims (2)
厚さの異なるポリシリコン膜よりなる光吸収膜によっ
て、色分離フィルタを構成したことを特徴とするカラー
固体撮像装置。1. A color solid-state image pickup device comprising a color separation filter composed of a light absorption film made of a polysilicon film having a different thickness formed above a plurality of photoelectric conversion elements.
されていることを特徴とする特許請求の範囲第１項記載
のカラー固体撮像装置。2. A color solid-state image pickup device according to claim 1, wherein a passivation film is formed on the light absorption film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10386886A JPH07117607B2 (en) | 1986-05-08 | 1986-05-08 | Color solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10386886A JPH07117607B2 (en) | 1986-05-08 | 1986-05-08 | Color solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62262001A JPS62262001A (en) | 1987-11-14 |
| JPH07117607B2 true JPH07117607B2 (en) | 1995-12-18 |
Family
ID=14365416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10386886A Expired - Lifetime JPH07117607B2 (en) | 1986-05-08 | 1986-05-08 | Color solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07117607B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01209405A (en) * | 1988-02-17 | 1989-08-23 | Matsushita Electric Ind Co Ltd | Color solid-state image pickup element |
| KR0186183B1 (en) * | 1995-12-19 | 1999-03-20 | 문정환 | Color solid state imaging device |
| US9075225B2 (en) | 2009-10-28 | 2015-07-07 | Alentic Microscience Inc. | Microscopy imaging |
| CN105974571B (en) * | 2009-10-28 | 2019-05-28 | 阿兰蒂克微科学股份有限公司 | Micro-imaging |
| US20140152801A1 (en) | 2009-10-28 | 2014-06-05 | Alentic Microscience Inc. | Detecting and Using Light Representative of a Sample |
| US10502666B2 (en) | 2013-02-06 | 2019-12-10 | Alentic Microscience Inc. | Sample processing improvements for quantitative microscopy |
| CA2953620C (en) | 2013-06-26 | 2020-08-25 | Alentic Microscience Inc. | Sample processing improvements for microscopy |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56165362A (en) * | 1980-05-26 | 1981-12-18 | Hitachi Ltd | Manufacture of solid state color image pickup element |
| JPS59124763A (en) * | 1983-01-04 | 1984-07-18 | Nec Corp | Semiconductor integrated circuit device |
-
1986
- 1986-05-08 JP JP10386886A patent/JPH07117607B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62262001A (en) | 1987-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4457142B2 (en) | Solid-state imaging device, camera module, and electronic information device | |
| EP0511404A1 (en) | Solid-state imaging device and method of manufacturing the same | |
| JPS60137059A (en) | 3-layer 4-stage structure solid state image sensor | |
| JP2009218382A (en) | Solid state imaging device, manufacturing method thereof and imaging device | |
| JPH07117607B2 (en) | Color solid-state imaging device | |
| CN210072654U (en) | Display panel and electronic device | |
| JP4264248B2 (en) | Color solid-state imaging device | |
| EP0509820A1 (en) | Image pickup apparatus | |
| US5350490A (en) | Forming a color filter on a semiconductor substrate | |
| JP2866355B2 (en) | Color solid-state imaging device | |
| TWI253597B (en) | Solid-state image sensor for improving sensing quality and manufacturing method thereof | |
| JPS6173033A (en) | Color exposure device | |
| JP4419264B2 (en) | Solid-state imaging device | |
| JPH02166767A (en) | Color solid state image sensor and manufacture thereof | |
| JPS62172319A (en) | Composite filter | |
| JP2004172335A (en) | Solid-state imaging apparatus | |
| JPH03120764A (en) | Photosensor | |
| JPH0472664A (en) | Solid-state image sensing device | |
| JPH11274449A (en) | Solid-state image pick up element and its manufacture | |
| JP2956092B2 (en) | Solid-state imaging device and method of manufacturing the same | |
| JPH02230768A (en) | Solid-state image sensing element | |
| JPS59163860A (en) | Solid-state image pickup element | |
| JPS5830284A (en) | Solid-state image pickup device | |
| JPS5548701A (en) | Color image detector | |
| JPS6386474A (en) | Solid-state image sensing device |