JPH07115861B2 - Method for manufacturing single crystal growing material - Google Patents
Method for manufacturing single crystal growing materialInfo
- Publication number
- JPH07115861B2 JPH07115861B2 JP19170989A JP19170989A JPH07115861B2 JP H07115861 B2 JPH07115861 B2 JP H07115861B2 JP 19170989 A JP19170989 A JP 19170989A JP 19170989 A JP19170989 A JP 19170989A JP H07115861 B2 JPH07115861 B2 JP H07115861B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- raw material
- bbo
- hydrate
- crystal growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 (産業上の利用分野) この発明は、非線形光学結晶ベータバリウムボレイト
(β−BaB2O4以下、β−BBOと略記する)単結晶の育成
原料を製造する方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a method for producing a growth raw material of a nonlinear optical crystal beta barium borate (β-BaB 2 O 4 or less, abbreviated as β-BBO) single crystal. Regarding the improvement of.
(従来の技術) 育成原料に化学沈澱法により得られたバリウムボレイト
水和物(BaB2O4・4H2O、以下BBO水和物と略記する)を
焼成したものを使用し、種結晶の代わりに白金線を用い
て通常の高周波炉によりフラックスを用いない直接引き
上げ法によりβ−BBOを育成することが可能であること
がわかった(特願昭63−325207)。育成に使用する原料
の製造方法は、ほう酸(H3BO3)と塩化バリウム(BaCl
・2H2O)の水溶液のpHを12以上にする必要があり、その
調整に水酸化ナトリウム(NaOH)を使用していた。(Prior art) Using a barium borate hydrate (BaB 2 O 4 .4H 2 O, hereinafter abbreviated as BBO hydrate) obtained by a chemical precipitation method as a growth raw material, a seed crystal was used. It was found that it is possible to grow β-BBO by a direct pulling method without using a flux in an ordinary high frequency furnace by using a platinum wire instead of (Japanese Patent Application No. 63-325207). The production method of the raw material used for growing is boric acid (H 3 BO 3 ) and barium chloride (BaCl
- the pH of the aqueous solution of 2H 2 O) must be 12 or more, have used sodium hydroxide (NaOH) in the adjustment.
(発明が解決しようとする課題) 化学沈澱法によりBBO水和物を得るためのpH調整に水酸
化ナトリウム(NaOH)を使用していたため、沈澱したBB
O水和物のなかにナトリウムイオンが不純物として含ま
れてしまっていた。焼成後乾燥、洗浄した育成原料の中
にもナトリウムイオンが混入し、この原料を不純物分析
した結果約1000ppmのナトリウムイオンが検出された。
これを原料として育成した結晶の中にも、不純物として
ナトリウムイオンが混入することはまぬがれられない。
結晶中にこの様な金属イオンが入ると結晶の品質が悪く
なり、非線形光学材料としての性能が落ちてしまうとい
う問題があった。(Problems to be Solved by the Invention) Since sodium hydroxide (NaOH) was used for pH adjustment to obtain BBO hydrate by the chemical precipitation method, the precipitated BB
Sodium ion was included as an impurity in O hydrate. Sodium ions were also mixed in the grown raw material that had been dried after firing and washed, and as a result of impurity analysis of this raw material, about 1000 ppm of sodium ions were detected.
It is unavoidable that sodium ions will be mixed as impurities into the crystals grown from this material.
If such metal ions enter the crystal, the quality of the crystal deteriorates and the performance as a nonlinear optical material deteriorates.
(課題を解決するための手段) ほう酸と塩化バリウムの水溶液からBBOの水和ち物を沈
澱させる際、pHの調整に水酸化テトラメチルアンモニウ
ム(以後、TMAHと略記する)水溶液を使用することによ
り、沈澱物の中に結晶の品質にとって有害な金属イオン
不純物が混入することなく、こうして得られた育成原料
を用いることにより、不純物混入のない高品質なβ−BB
O単結晶を育成することができる。(Means for Solving the Problem) When precipitating a hydrate of BBO from an aqueous solution of boric acid and barium chloride, an aqueous tetramethylammonium hydroxide (hereinafter abbreviated as TMAH) solution is used to adjust pH. By using the growing raw material obtained in this way without mixing metal ion impurities, which are harmful to the quality of crystals, in the precipitate, high quality β-BB containing no impurities can be obtained.
O single crystal can be grown.
(作用) 水溶液のpHを強アルカリ性に調整するのには、通常アル
カリ金属の水酸化物を用いる。ほう酸と塩化バリウムの
水溶液からBBO水和物を沈澱させるにはpHを12以上にす
る必要があるので、従来までは水酸化ナトリウムを用い
てpHの調整を行っていた。しかしこの方法だと溶液の中
にアルカリ金属イオンが含まれてしまい、この金属イオ
ンは焼成しても蒸発することはなく、不純物として育成
原料中に含まれてしまう。しかしpHの調整にTMAHを使用
して沈澱させたBBO水和物だと、焼成時に有機成分は蒸
発してしまうので育成原料中に不純物が混入することが
ない。またTMAHは半導体材料の前処理などにも利用さ
れ、金属不純物が1ppb以下のものが容易に入手できる。
この方法で得られた原料を使用すれば不純物混入のない
高品質なβ−BBO単結晶が得られる。(Function) In order to adjust the pH of the aqueous solution to be strongly alkaline, an alkali metal hydroxide is usually used. In order to precipitate BBO hydrate from an aqueous solution of boric acid and barium chloride, it is necessary to adjust the pH to 12 or higher. So far, sodium hydroxide was used to adjust the pH. However, according to this method, alkali metal ions are contained in the solution, the metal ions do not evaporate even when fired, and are contained as impurities in the growth raw material. However, if BBO hydrate was precipitated using TMAH to adjust the pH, the organic components would evaporate during firing, so that impurities would not be mixed into the growth material. TMAH is also used for pretreatment of semiconductor materials, and metal impurities with 1 ppb or less are easily available.
If the raw material obtained by this method is used, a high-quality β-BBO single crystal free from impurities can be obtained.
(実施例) ほう酸(H3BO3)と塩化バリウム(BaCl2・4H2O)を2:1
のモル比で混合した粉末を50℃以上にならないように注
意深く加熱した水に少しずつ加えていき、水に飽和する
少し手前まで溶かした。次にpHを12以上になるように濃
厚TMAH水溶液を少しずつ加えてBBO水和物を沈澱させ
た。このとき、反応熱により溶液の温度が50℃以上に上
がらないように容器を冷却しながら行った(50℃以上に
なると沈澱は非晶質になってしまう)。沈澱したBBO水
和物を洗浄、乾燥後、白金の容器に移し、電気炉で1250
℃まで加熱し約3時間その温度を保ち、その後電気炉の
電源を切って常温まで自然冷却した。こうして得られた
育成原料の不純物分析をした結果、結晶の品質とって有
害な金属イオンは検出限界以下(0.1ppm以下)であっ
た。(Example) boric acid (H 3 BO 3) and barium chloride (BaCl 2 · 4H 2 O) 2: 1
The powder mixed in the above molar ratio was added little by little to water heated carefully so that the temperature did not exceed 50 ° C., and dissolved until just before saturation with water. Next, a concentrated aqueous TMAH solution was added little by little so that the pH became 12 or more, and BBO hydrate was precipitated. At this time, the reaction was carried out while cooling the container so that the temperature of the solution did not rise above 50 ° C (when the temperature rises above 50 ° C, the precipitate becomes amorphous). The precipitated BBO hydrate is washed, dried, transferred to a platinum container, and heated in an electric furnace for 1250
The mixture was heated to ℃ and kept at that temperature for about 3 hours, and then the electric furnace was turned off and naturally cooled to room temperature. As a result of impurity analysis of the thus obtained growth material, metal ions harmful to crystal quality were below the detection limit (0.1 ppm or less).
この原料をアルミナ耐火物で保温した内径40mm、深さ40
mm、厚さ1.5mmの白金るつぼに、加熱、融解して充填
し、直径1.5mmの白金線を種結晶の代わりに用いて通常
の高周波単結晶引き上げ装置で育成を行った。るつぼ上
部は高さ12cmの通常のアルミナ耐火物で保温した。育成
雰囲気は空気中とし、白金線の回転速度は14rpm、引き
上げ速度は4mm/hrとした。この条件で育成を試みたとこ
ろ、直銅部8mm、長さ12mmのβ−BBO単結晶を育成でき
た。育成した結晶の不純物分析をした結果、金属イオン
は検出限界以下(0.1ppm以下)であった。This raw material was kept warm with an alumina refractory material with an inner diameter of 40 mm and a depth of 40
A platinum crucible having a thickness of 1.5 mm and a thickness of 1.5 mm was heated, melted, and filled, and a platinum wire having a diameter of 1.5 mm was used in place of the seed crystal, and was grown by an ordinary high-frequency single crystal pulling apparatus. The upper part of the crucible was kept warm with a normal alumina refractory having a height of 12 cm. The growth atmosphere was in air, the platinum wire rotation speed was 14 rpm, and the pulling speed was 4 mm / hr. When the growth was tried under these conditions, a β-BBO single crystal having a straight copper portion of 8 mm and a length of 12 mm could be grown. As a result of impurity analysis of the grown crystal, metal ions were below the detection limit (0.1 ppm or less).
(発明の効果) 本発明によれば、BBO融液から引き上げ法でβ−BBOを育
成する際、不純物混入のない高品質なβ−BBO単結晶育
成原料を得ることが出来る。(Effect of the Invention) According to the present invention, when growing β-BBO from a BBO melt by a pulling method, it is possible to obtain a high-quality β-BBO single crystal growth raw material free from impurities.
Claims (1)
結晶を融液から引き上げ法で育成するときの原料である
バリウムボレイト水和物(BaB2O4・4H2O)の製造におい
て、ほう酸(H3BO3)と塩化バリウム(BaCl・2H2O)の
水溶液から目的の化合物を沈澱によって製造する際に、
水酸化テトラメチルアンモニウム((CH3)4NOH)水溶
液をpHの調整に用いることを特徴とする単結晶育成原料
の製造方法。1. A barium borate hydrate (BaB 2 O 4 .4H 2 O) which is a raw material when growing a beta barium borate (β-BaB 2 O 4 ) single crystal from a melt by a pulling method. In the production, when the target compound is produced by precipitation from an aqueous solution of boric acid (H 3 BO 3 ) and barium chloride (BaCl · 2H 2 O),
A method for producing a single crystal growth raw material, which comprises using an aqueous solution of tetramethylammonium hydroxide ((CH 3 ) 4 NOH) for adjusting the pH.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19170989A JPH07115861B2 (en) | 1989-07-24 | 1989-07-24 | Method for manufacturing single crystal growing material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19170989A JPH07115861B2 (en) | 1989-07-24 | 1989-07-24 | Method for manufacturing single crystal growing material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0354112A JPH0354112A (en) | 1991-03-08 |
JPH07115861B2 true JPH07115861B2 (en) | 1995-12-13 |
Family
ID=16279175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19170989A Expired - Fee Related JPH07115861B2 (en) | 1989-07-24 | 1989-07-24 | Method for manufacturing single crystal growing material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07115861B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07108837B2 (en) * | 1992-06-18 | 1995-11-22 | 日本電気株式会社 | Beta barium borate single crystal growth method |
CN100362144C (en) * | 2003-02-13 | 2008-01-16 | 独立行政法人科学技术振兴机构 | Method for preparing borate-based crystal and laser oscillation apparatus |
TWI271384B (en) | 2003-02-13 | 2007-01-21 | Japan Science & Tech Agency | Manufacture for boric acid crystals and laser oscillation apparatus |
-
1989
- 1989-07-24 JP JP19170989A patent/JPH07115861B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0354112A (en) | 1991-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |