JPH07115049A - Reduction projection aligner - Google Patents

Reduction projection aligner

Info

Publication number
JPH07115049A
JPH07115049A JP5259849A JP25984993A JPH07115049A JP H07115049 A JPH07115049 A JP H07115049A JP 5259849 A JP5259849 A JP 5259849A JP 25984993 A JP25984993 A JP 25984993A JP H07115049 A JPH07115049 A JP H07115049A
Authority
JP
Japan
Prior art keywords
reduction projection
lens
liquid crystal
projection lens
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5259849A
Other languages
Japanese (ja)
Inventor
Yoshimitsu Okuda
能充 奥田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5259849A priority Critical patent/JPH07115049A/en
Publication of JPH07115049A publication Critical patent/JPH07115049A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Abstract

PURPOSE:To enable easy change of numerical aperture without causing geometric distortion of accuracy and troubles by dust. CONSTITUTION:Light emitted from a light source 1 passes through a reflection mirror 2 and a fly's eye lens 3, passes through a diaphragm 4, further passes through a relay lens 5, a reflection mirror 6 and a condenser lens 7 and lights a reticle 8. Light which passed through the reticle 8 and obtained information enters a reduction projection lens 9. A liquid crystal display 12 is installed in a pupil surface of the reduction projection lens 9. The liquid crystal display 12 can generate an arbitrary image by an electric signal by an electric signal generator 13. Light passed through the reduction projection lens 9 exposes a silicon substrate 11.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体装置の製造工程
等で微細なパターンを形成するために用いられる縮小投
影露光装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reduction projection exposure apparatus used for forming a fine pattern in a semiconductor device manufacturing process or the like.

【0002】[0002]

【従来の技術】半導体装置は微細化が著しく進み0.5
μm以下のデザインルールを有する半導体装置が作られ
てきている。このような半導体装置の製造工程のうち、
所望の回路パターンを半導体基板上に描くリソグラフィ
ー工程においては、レチクルに描かれたパターンを、縮
小投影露光装置(ステッパ)でシリコン基板上のレジス
トへ転写する方法が一般的である。
2. Description of the Related Art The miniaturization of semiconductor devices has progressed remarkably and 0.5
Semiconductor devices having a design rule of μm or less have been manufactured. Of the manufacturing process of such a semiconductor device,
In a lithography process of drawing a desired circuit pattern on a semiconductor substrate, a method of transferring a pattern drawn on a reticle to a resist on a silicon substrate by a reduction projection exposure apparatus (stepper) is generally used.

【0003】図2は従来より用いられている縮小投影露
光装置の光学系を示した図である。図2において、光源
1を出た光は、反射鏡2、フライアイレンズ3および絞
り4を通過し、さらにリレーレンズ5、反射鏡6、コン
デンサレンズ7を介してレチクル8を照明する。レチク
ル8上のパターンによって光は回折しパターン情報を持
って縮小投影レンズ9に入る。そして縮小されてシリコ
ン基板11を露光する。縮小投影レンズ9は多数枚のレ
ンズから成るが、その瞳面ではレチクルパターンの情報
がフーリエ変換された形の光強度分布を示す。
FIG. 2 is a diagram showing an optical system of a conventional reduction projection exposure apparatus. In FIG. 2, the light emitted from the light source 1 passes through the reflecting mirror 2, the fly-eye lens 3 and the diaphragm 4, and further illuminates the reticle 8 via the relay lens 5, the reflecting mirror 6 and the condenser lens 7. The light is diffracted by the pattern on the reticle 8 and enters the reduction projection lens 9 with the pattern information. Then, the silicon substrate 11 is reduced and exposed. The reduction projection lens 9 is composed of a large number of lenses, and its pupil plane shows a light intensity distribution in a form in which the reticle pattern information is Fourier transformed.

【0004】レチクル8の高い空間周波数を有するパタ
ーン情報は瞳面の中心から遠い部分を通過し、低い空間
周波数パターン情報は中心付近を通過する。縮小投影レ
ンズ9の開口数はこの瞳面の広さによって一義的に決ま
り、同一焦点距離を有する縮小投影レンズでは瞳面が広
いほど開口数が高く、したがってレチクル8上の高い空
間周波数を有するパターンの情報まで伝達することがで
きるため解像力は高くなる。しかし開口数が高い縮小投
影レンズは焦点深度が浅くなる。縮小投影レンズの解像
度の限界付近を使用してパターン形成を行う場合、シリ
コン基板11の段差とパターンの細かさの兼ね合いによ
り、開口数に最適値が生じる。従来は開口数調整を瞳面
に金属板フィルタ10を入れ替えることによって行う場
合が多かった。
The pattern information having a high spatial frequency of the reticle 8 passes through a portion far from the center of the pupil plane, and the low spatial frequency pattern information passes near the center. The numerical aperture of the reduction projection lens 9 is uniquely determined by the size of the pupil plane. In the reduction projection lens having the same focal length, the wider the pupil plane is, the higher the numerical aperture is. Therefore, the pattern having a high spatial frequency on the reticle 8 is formed. Since the information of up to can be transmitted, the resolution is high. However, a reduction projection lens with a high numerical aperture has a shallow depth of focus. When pattern formation is performed using the resolution projection lens near the limit of resolution, an optimum value is generated for the numerical aperture due to the trade-off between the steps of the silicon substrate 11 and the fineness of the pattern. Conventionally, the numerical aperture has often been adjusted by replacing the metal plate filter 10 on the pupil plane.

【0005】[0005]

【発明が解決しようとする課題】前述のように装置の解
像度の限界付近での使用を余儀なくされる縮小投影露光
装置において、縮小投影レンズ9の開口数をシリコン基
板11の段差やパターン寸法に応じて変化させる必要が
生じてきた。この場合、縮小投影レンズ9の瞳面はレン
ズの鏡筒内の一面であり、その部分に金属板フィルタ1
0を設置する必要がある。この金属板フィルタ10の入
れ替えを行う場合、精密なレンズの一部においての物理
的な変更作業となるため、精度の狂いやダストによる不
具合が生じる場合がある。また、所望のフィルタを得る
にはその都度設計製作が必要であり、極めて大きな手間
と時間を要していた。
As described above, in the reduction projection exposure apparatus which is forced to be used near the resolution limit of the apparatus, the numerical aperture of the reduction projection lens 9 is changed according to the step or pattern size of the silicon substrate 11. Need to change. In this case, the pupil plane of the reduction projection lens 9 is one surface in the lens barrel of the lens, and the metal plate filter 1 is provided on that portion.
It is necessary to set 0. When this metal plate filter 10 is replaced, a physical change operation is performed on a part of a precise lens, which may cause a defect in accuracy and dust. Further, designing and manufacturing are required each time to obtain a desired filter, which requires an extremely large amount of labor and time.

【0006】この発明は、精度の狂いやダストによる不
具合を生じることなく、開口数を容易に変化させること
ができる縮小投影露光装置を提供することを目的とす
る。
It is an object of the present invention to provide a reduction projection exposure apparatus which can easily change the numerical aperture without causing a precision error and a defect due to dust.

【0007】[0007]

【課題を解決するための手段】請求項1記載の縮小投影
露光装置は、縮小投影レンズの瞳面に、外部より電気信
号を加えることによって露光光に対する透過率がその全
面または一部で変化するフィルタを備えている。請求項
2記載の縮小投影露光装置は、請求項1において、フィ
ルタを、透明パターン電極を形成した偏平透明容器に液
晶を封入した液晶表示板で構成したものである。
According to another aspect of the reduction projection exposure apparatus of the present invention, by applying an electric signal from the outside to the pupil plane of the reduction projection lens, the transmittance with respect to the exposure light is changed in whole or in part. It has a filter. A reduction projection exposure apparatus according to a second aspect is the reduction projection exposure apparatus according to the first aspect, wherein the filter is composed of a liquid crystal display plate in which liquid crystal is sealed in a flat transparent container having transparent pattern electrodes.

【0008】[0008]

【作用】この発明の縮小投影露光装置においては、瞳面
のフィルタに外部からの電気信号で任意のパターンを描
くことができるため、開口数の変更を行う場合フィルタ
の物理的な交換を行うことが一切不要なだけでなく、所
望のフィルタを電気信号の変更を行うだけで瞬時に形成
することが可能である。
In the reduction projection exposure apparatus of the present invention, an arbitrary pattern can be drawn on the filter on the pupil plane by an external electric signal. Therefore, when changing the numerical aperture, the filter must be physically replaced. Not only is it unnecessary, but it is possible to instantly form a desired filter simply by changing the electric signal.

【0009】[0009]

【実施例】以下にこの発明を実施例を用いて詳細に述べ
る。図1はこの発明の縮小投影露光装置の光学系を示し
たものである。光源1より発した光は、反射鏡2および
フライアイレンズ3を通過した後、絞り4を通過しさら
にリレーレンズ5、反射鏡6、コンデンサレンズ7を介
してレチクル8を照明する。レチクルを通過し情報を得
た光は縮小投影レンズ9に入る。この縮小投影レンズ9
の瞳面に液晶表示板12が設置されている。この液晶表
示板12は、透明パターン電極を形成した偏平透明容器
に液晶を封入したものであり、電気信号発生器13によ
る電気信号を透明パターン電極に印加することによって
任意の像を発生することができる。縮小投影レンズ9を
通過した光はシリコン基板11を露光する。
EXAMPLES The present invention will be described in detail below with reference to examples. FIG. 1 shows an optical system of a reduction projection exposure apparatus according to the present invention. The light emitted from the light source 1 passes through the reflecting mirror 2 and the fly-eye lens 3, then passes through the diaphragm 4, and further illuminates the reticle 8 via the relay lens 5, the reflecting mirror 6, and the condenser lens 7. The light that has passed the reticle and obtained information enters the reduction projection lens 9. This reduction projection lens 9
The liquid crystal display board 12 is installed on the pupil plane of the. The liquid crystal display plate 12 is one in which liquid crystal is sealed in a flat transparent container having transparent pattern electrodes formed thereon, and an arbitrary image can be generated by applying an electric signal from the electric signal generator 13 to the transparent pattern electrodes. it can. The light that has passed through the reduction projection lens 9 exposes the silicon substrate 11.

【0010】液晶表示板12は画像領域が25cm×25
cmで1画素の大きさは250μm×250μm程度であ
る。実施例における縮小投影露光装置の光源の波長は3
65nm、照明系の偏光度は0.6である。また完全開口
時の縮小投影レンズ9の開口数は0.5である。つぎ
に、この実施例の縮小投影露光装置によるレジストパタ
ーン形成時の特性を従来法と比較する。まず、縮小投影
レンズ9の中心より11.5cmの円形を実施例とする開
口パターンを液晶表示板12上に形成し開口数を0.4
5にしてポジ型のフォトレジスト上にラインアンドスペ
ース状のパターンを露光した。この時、0.40μmの
パターンまで解像することができた。この値は金属板フ
ィルタを介した場合と全く同様の値であった。つぎに、
液晶表示板12に中心から20cmの開口パターンを形成
して縮小投影レンズ9の開口数を0.4として同様の焼
付けを行ったところ、0.44μmのパターンまで解像
した。この値も、金属板フィルタを用いた場合と同一で
あった。
The liquid crystal display panel 12 has an image area of 25 cm × 25.
The size of one pixel in cm is about 250 μm × 250 μm. The wavelength of the light source of the reduction projection exposure apparatus in the embodiment is 3
65 nm, the polarization degree of the illumination system is 0.6. Further, the numerical aperture of the reduction projection lens 9 at the time of full aperture is 0.5. Next, the characteristics at the time of forming a resist pattern by the reduction projection exposure apparatus of this embodiment will be compared with the conventional method. First, an aperture pattern having a circular shape of 11.5 cm from the center of the reduction projection lens 9 as an example is formed on the liquid crystal display plate 12, and the numerical aperture is 0.4.
5, a line-and-space pattern was exposed on the positive photoresist. At this time, it was possible to resolve a pattern of 0.40 μm. This value was exactly the same as when the metal plate filter was used. Next,
When an aperture pattern 20 cm from the center was formed on the liquid crystal display plate 12 and the same printing was performed with the numerical aperture of the reduction projection lens 9 being 0.4, a pattern of 0.44 μm was resolved. This value was also the same as when the metal plate filter was used.

【0011】以上のように、金属板フィルタの代わりに
液晶表示板を用いても、全く同様の効果があることが確
認できた。なお、液晶表示板に限らず、電気信号で光不
透過部を自在に変更できるものなら、何でもフィルタと
して採用可能である。
As described above, it was confirmed that even if a liquid crystal display plate was used instead of the metal plate filter, the same effect was obtained. The filter is not limited to the liquid crystal display plate, and any filter can be used as long as it can freely change the light opaque portion by an electric signal.

【0012】[0012]

【発明の効果】この発明の縮小投影露光装置は、縮小投
影レンズの開口数を外部からの電気信号で容易に変化さ
せることができ、レンズに物理的な操作を行うことが全
くないため、レンズの精度等を高く保つことができると
ともに装置の使用効率も極めて高くなる。
In the reduction projection exposure apparatus of the present invention, the numerical aperture of the reduction projection lens can be easily changed by an electric signal from the outside, and the lens is not physically operated at all. The accuracy and the like can be kept high, and the efficiency of use of the device is extremely high.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例の縮小投影露光装置の光学
系の概念図である。
FIG. 1 is a conceptual diagram of an optical system of a reduction projection exposure apparatus according to an embodiment of the present invention.

【図2】従来の縮小投影露光装置の光学系の概念図であ
る。
FIG. 2 is a conceptual diagram of an optical system of a conventional reduction projection exposure apparatus.

【符号の説明】[Explanation of symbols]

1 光源 2 反射鏡 3 フライアイレンズ 4 絞り 5 リレーレンズ 6 反射鏡 7 コンデンサレンズ 8 レチクル 9 縮小投影レンズ 11 シリコン基板 12 液晶表示板 13 電気信号発生器 1 Light Source 2 Reflector 3 Fly-eye Lens 4 Aperture 5 Relay Lens 6 Reflector 7 Condenser Lens 8 Reticle 9 Reduction Projection Lens 11 Silicon Substrate 12 Liquid Crystal Display 13 Electric Signal Generator

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 縮小投影レンズの瞳面に、外部より電気
信号を加えることによって露光光に対する透過率がその
全面または一部で変化するフィルタを備えた縮小投影露
光装置。
1. A reduction projection exposure apparatus provided with a filter whose transmittance for exposure light changes on the entire or a part of the pupil surface of a reduction projection lens when an electric signal is applied from the outside.
【請求項2】 フィルタが、透明パターン電極を形成し
た偏平透明容器に液晶を封入した液晶表示板である請求
項1記載の縮小投影露光装置。
2. The reduction projection exposure apparatus according to claim 1, wherein the filter is a liquid crystal display plate in which liquid crystal is enclosed in a flat transparent container having transparent pattern electrodes.
JP5259849A 1993-10-18 1993-10-18 Reduction projection aligner Pending JPH07115049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5259849A JPH07115049A (en) 1993-10-18 1993-10-18 Reduction projection aligner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5259849A JPH07115049A (en) 1993-10-18 1993-10-18 Reduction projection aligner

Publications (1)

Publication Number Publication Date
JPH07115049A true JPH07115049A (en) 1995-05-02

Family

ID=17339837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5259849A Pending JPH07115049A (en) 1993-10-18 1993-10-18 Reduction projection aligner

Country Status (1)

Country Link
JP (1) JPH07115049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920377A (en) * 1996-05-21 1999-07-06 Lg Semicon Co., Ltd. Multi-hood system for correcting individual lens distortions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920377A (en) * 1996-05-21 1999-07-06 Lg Semicon Co., Ltd. Multi-hood system for correcting individual lens distortions

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