JPH07112284A - Production of resin sealed semiconductor device - Google Patents

Abstract

PURPOSE:To improve the clearness of display mark to be marked on a resin sealed body of resin sealed semiconductor device. CONSTITUTION:In the production method of a resin sealed semiconductor device, by which a display mark 6 is marked on one surface of a resin sealed body 2 added with a die parting agent by laser marking technology, before marking process to mark the display mark 6 on one surface of the resin sealed body by laser marking technology, the surface treatment process is provided to remove the die parting agent on one surface of the resin sealed body 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device in which a display mark is marked on one surface of a resin encapsulant containing a release agent by a laser marking technique. The present invention relates to a technique effectively applied to a semiconductor device.

[0002]

The reduction of the Related Art product cost as the main purpose, for example DRAM (D ynamic R andom A ccess M emory), S
A semiconductor pellet storage circuit system is the tower such RAM (S tatic RAM) is a resin sealed semiconductor device sealed with a resin sealing body. This type of resin-sealed semiconductor device, for example, DIP (D ual I n-line P ackage) type, SO
J (S mall O ut-line J type lead Package) type, TS
OP (T in S mall O ut -line P ackage) composed of a package structure of the type or the like.

The resin-sealed body of the resin-sealed semiconductor device is molded by a transfer molding technique in a sealing step in the manufacturing process. In this transfer molding technique, an epoxy resin to which a release agent is added is usually used in order to easily separate the resin sealing body from the molding die. That is, the release agent is added to the resin sealing body of the resin sealing body type semiconductor device.

In the resin-encapsulated semiconductor device, display marks such as a product name, a company name, a product type, and a manufacturing lot number are marked on one surface of the resin-encapsulated body. This display mark is marked by the laser marking technique in the marking step during the manufacturing process. The laser marking technique is a technique of irradiating one surface (marking area) of a resin sealing body with a laser beam, and scraping off the surface of the resin sealing body irradiated with the laser beam to mark a display mark. This laser marking technology does not require a cleaning process before marking or a drying process after marking, and the disappearance phenomenon that the display mark disappears after marking does not occur.

The laser marking technique is described in, for example, the latest technology compilation of the VLSI factory issued by Realize Co., Ltd., Part 2, Latest Process and Automation, pages 283 to 285.

[0006]

The present invention has found that the following problems occur in the marking step in the manufacturing process of the resin-encapsulated semiconductor device described above.

A mold release agent is added to the resin encapsulant of the resin-encapsulated semiconductor device. This release agent bleeds (bleeds) on the surface of the resin sealing body. For this reason, in the marking process, when marking a display mark on one surface of the resin encapsulant using the laser marking technique, the release agent is burned by the laser light and becomes carbon soot, which causes the resin encapsulant to disappear. There is a problem in that the adherence to the surface lowers the definition of the display mark. This decrease in the definition of the display mark induces a recognition failure in the mounting device when the resin-sealed semiconductor device is mounted on the mounting substrate.

An object of the present invention is to provide a technique capable of increasing the sharpness of a display mark to be marked on a resin sealing body of a resin sealing type semiconductor device.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0010]

Of the inventions disclosed in the present application, a representative one will be briefly described below.
It is as follows.

In a method of manufacturing a resin-sealed semiconductor device in which a display mark is marked on one surface of a resin-sealed body to which a release agent has been added by laser marking technology, the resin-sealed body is molded and sealed. After the step (molding step) and before the marking step of marking the display mark on the one surface of the resin encapsulant by laser marking technology, the surface from which the release agent on the one surface of the resin encapsulant is removed. Equipped with processing steps.

[0012]

According to the above-mentioned means, the release agent bleeding on one surface of the resin encapsulation body has already been removed in the surface treatment step. When marking with, carbon soot is not generated due to burning of the release agent. As a result, it is possible to prevent carbon soot adhering to one surface of the resin encapsulant, so that it is possible to increase the definition of the display mark.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the present invention will be described below together with an embodiment in which the present invention is applied to a resin-sealed semiconductor device having a DIP type package structure. In all the drawings for explaining the embodiments, parts having the same function are designated by the same reference numerals, and repeated description thereof will be omitted.

A schematic structure of a resin-encapsulated semiconductor device having a DIP type package structure, which is an embodiment of the present invention, is shown in FIG. 1 (plan view) and FIG. 2 (AA cutting line shown in FIG. 1). A cross-sectional view taken along the line).

As shown in FIGS. 1 and 2, in the resin-sealed semiconductor device 1 of this embodiment, the semiconductor pellet 3, the inner leads 4A, the tabs 4C, the bonding wires 5 and the like are sealed with the resin-sealed body 2. Then, the resin encapsulant 2 has a DIP-type package structure in which a plurality of outer leads 3B are arranged along each of the opposing long sides.

The semiconductor pellet 2 is mounted on the pellet mounting surface of the tab 4C, and is electrically connected to the inner lead 4A via the bonding wire 5. The inner lead 4A is formed integrally with the outer lead 4B, and the outer lead 4B is formed in a pin insertion type shape.

The resin sealing body 2 is molded by the transfer molding technique. In the transfer molding technique, for example, epoxy resin is used. To this epoxy resin, for example, a phenol curing agent, silicone rubber and filler are added. Further, a release agent is added to the epoxy resin in order to make it easy to separate from the molding die. That is, the release agent is added to the resin sealing body 2 of the resin sealing type semiconductor device 1.

On one surface of the resin sealing body 2, a display mark 6 such as a product name, a company name, a product type, a manufacturing lot number, etc. is marked. This display mark is marked by the laser marking technique in the marking step during the manufacturing process.

Next, a method for manufacturing the resin-sealed semiconductor device 1 will be briefly described with reference to FIG. 3 (process flow diagram).

First, the semiconductor pellet 3 is prepared <1
0>. The semiconductor pellet 3 includes, for example, DRAM, SR
A memory circuit system such as AM is installed.

Next, the semiconductor pellets 3 are mounted on the pellet mounting surface of the tab 4C supported by the lead frame.
(Pellet bonding), and thereafter, an external terminal (bonding pad) of the semiconductor pellet 3 and an inner lead 4A supported by the lead frame via an outer lead 4B are electrically connected by a bonding wire 5 ( Wire bonding) <11>.

Next, the semiconductor pellet 3, the inner lead 4A, the tab 4C, the bonding wire 5 and the like are sealed with the resin sealing body 2 <12>. This resin sealing body 2 is molded by the transfer molding technique.

Next, the outer lead 4B is cut from the lead frame, and then the outer lead 4B is molded into a pin insertion mold <13>.

Next, a surface treatment for removing the release agent on one surface (surface mark forming area) of the resin encapsulant 2 is performed <1.
4>. The surface treatment is performed by a laser marking device used in the marking step after the surface treatment. As shown in FIG. 4 (explanatory view), the laser marking device includes a laser oscillator 10, an alignment mirror 11, and a beam shaping unit 1.
2, a beam splitter 13, a condenser lens 14, a liquid crystal mask 15, a folding mirror 16, a dust collecting nozzle 17 and the like. In the surface treatment, the laser light B1 from the laser oscillator 10 is passed through the alignment mirror 11, the beam shaping unit 12, and the beam splitter 13, and the resin sealing body 2 is used.
One surface of the resin sealing body 2 is irradiated, and the release agent oozing on the one surface of the resin sealing body 2 is burned off (removed). The laser beam B1 is set to have a smaller laser output than the laser beam B2 described later.

Next, the display mark 6 is marked on one surface of the resin sealing body 2 <15>. This marking is performed with the marking device used in the surface treatment process in the previous stage.
As shown in FIG. 4, the marking is performed from the laser oscillator 10 to the alignment mirror 11, the beam shaping unit 12,
Beam splitter 13, condenser lens 14, liquid crystal mask 1
5. Laser light B2 passing through each of the folding mirrors 16
Is irradiated on one surface of the resin sealing body 2, and the surface of the resin sealing body 2 irradiated with the laser beam B2 is scraped off to form the display mark 6. At this time, since the release agent bleeding on one surface of the resin sealing body 2 has already been removed in the surface treatment step, carbon soot is not generated due to burning of the release agent, and one surface of the resin sealing body 2 is not generated. It is possible to prevent carbon soot from adhering to.

Thereafter, an aging (burn-in) process and an inspection process are performed, whereby the resin-sealed semiconductor device of this embodiment is almost completed <16>.

The surface treatment may be performed after the sealing step (molding step) in which the resin sealing body 2 is molded and before the lead frame cutting step.

As described above, in the method of manufacturing the resin-sealed semiconductor device 1 in which the display mark 6 is marked on one surface of the resin-sealed body 2 to which the release agent is added by the laser marking device, the resin-sealed Sealing step in which the body 2 is molded
(Molding step) After the step <12> and before the marking step <15> of marking the display mark 6 on one surface of the resin sealing body 2 with a laser marking device, Surface treatment process to remove surface release agent <1
4>. As a result, the release agent bleeding on one surface of the resin encapsulation body 2 has already been removed in the surface treatment step. Therefore, when the display mark 6 is marked on the one surface of the resin encapsulation body 2 with the laser marking device. No carbon soot is generated due to burning of the release agent. As a result, it is possible to prevent carbon soot from adhering to the one surface of the resin encapsulant 2, so that the definition of the display mark 6 can be increased.

Since the surface treatment step <14> and the marking step <15> are performed by the same marking device,
The sharpness of the display mark 6 can be increased without newly adding a manufacturing device.

As described above, the invention made by the present inventor is
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

[0031]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

The sharpness of the display mark to be marked on the resin sealing body of the resin sealing type semiconductor device can be increased.

[Brief description of drawings]

FIG. 1 is a plan view showing a schematic configuration of a resin-sealed semiconductor device having a DIP type package structure which is an embodiment of the present invention,

FIG. 2 is a sectional view taken along the line AA shown in FIG.

FIG. 3 is a process flow diagram for explaining a method of manufacturing the resin-sealed semiconductor device,

FIG. 4 is an explanatory diagram for explaining a method of manufacturing the resin-encapsulated semiconductor device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Resin-sealed semiconductor device, 2 ... Resin-sealed body, 3 ... Semiconductor pellet, 4A ... Inner lead, 4B ... Outer lead, 4C ... Tab, 5 ... Bonding wire, 6 ... Display mark, 10 ... Laser oscillator, 11 ... Alignment mirror, 12 ... Beam shaping unit, 13 ... Beam splitter, 14 ... Condensing lens, 15 ... Liquid crystal mask, 16 ... Folding mirror, 17 ... Dust collecting nozzle, B1, B2 ... Laser light.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Naoki Toda 3-3, Fujibashi, Ome, Tokyo 2-3 Hitachi Hitachi Electronics Co., Ltd. (72) Junichi Kumano 3-3, Fujibashi, Ome, Tokyo 2 Hitachi 2 Inside Kyo Electronics Co., Ltd. (72) Inventor Yaga ▲ Saki ▼ Mataho 3-3 Fujitobashi, Ome-shi, Tokyo 2 Hitachi Tokyo Electronics Co., Ltd. (72) Inventor Kazuhiro Kiyoki 3-3 Fujibashi, Ome-shi, Tokyo 2 Within Hitachi Tokyo Electronics Co., Ltd.

Claims (2)

[Claims] 1. A method for manufacturing a resin-sealed semiconductor device, wherein a display mark is marked on one surface of a resin-sealed body to which a release agent has been added by a laser marking technique, wherein the resin-sealed body is molded. After the sealing step, before the marking step of marking a display mark on the one surface of the resin sealing body with a laser marking technique, a surface treatment step of removing the release agent from the one surface of the resin sealing body. A method for manufacturing a resin-encapsulated semiconductor device, comprising: 2. The method for manufacturing a resin-encapsulated semiconductor device, wherein the surface treatment step is performed by a laser marking device used in a laser marking technique.