JPH0710930U - Projection exposure device - Google Patents

Abstract

(57) [Summary] [Object] To provide a projection exposure apparatus capable of exposing a mask pattern on a resist film on a substrate having a large area with a small number of shots and using a small mask. [Structure] An illumination system 1, a magnifying lens 2, and an xy table 3 that can move in the x-axis and y-axis directions. A mask 4 of an original plate is arranged between the illumination system 1 and the magnifying lens 2, and a resist is applied. The substrate 5 is fixed on the xy table 3. Then, by appropriately setting the positions of the magnifying lens 2, the mask 4, the substrate 5 and the like and the focal length of the magnifying lens 2, the pattern of the mask 4 is imaged on the resist film of the substrate 5 at a desired magnification. You can

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a projection exposure apparatus. More specifically, the present invention relates to a projection exposure apparatus capable of exposing a large-scale substrate such as a printed circuit board or a transparent substrate of a liquid crystal display device to a circuit pattern or the like at one time.

[0002]

[Prior art]

 When forming a fine pattern on a substrate such as a semiconductor wafer, photolithography technology is used to expose a pattern on a resist film provided on the substrate using a mask on which a desired pattern is formed and etch it. To be In this photolithography, a pattern of a resist film is formed by projecting and exposing a pattern drawn on a mask, which is an original plate, onto a resist-coated substrate and developing it.

Conventionally, during this exposure, the pattern is usually transferred in the same size or reduced in size in order to reduce the influence of the precision of the pattern of the mask and fine dust.

The area that can be exposed by one shot of the substrate is about 150 mm × 150 mm. Therefore, when the substrate is larger than that, the exposure is divided into a plurality of shots. The projection exposure apparatus used for performing this divided exposure includes a step-and-repeat (hereinafter referred to as a stepper) apparatus and a mirror projection apparatus.

The stepper device divides the substrate and sequentially exposes a mask pattern for each shot. On the other hand, a mirror projection device moves the mask and the substrate as a unit while sequentially exposing each part of the mask pattern.

[0006]

[Problems to be solved by the device]

 However, in a conventional projection exposure apparatus that transfers the mask pattern with the same size or reduced, as the substrate area increases, the number of shots increases and throughput increases in the case of a stepper apparatus, for example. There is a problem that For example, when forming a pattern of a 10-inch (25.4 cm) display panel using a stepper device which transfers images at the same size, the projection exposure must be shot in four steps, for example.

Further, in the case of the mirror projection device, the mask becomes large because the area of the substrate becomes large. For example, it is very difficult to make a defect-free mask for the 10-inch display panel described above. Not only is it difficult, but there is a problem that the mask deflects due to its own weight and the imaging position of the pattern shifts.

On the other hand, the pattern of the mask, which is the original plate, is formed by scanning an electron beam (hereinafter referred to as EB) in a pattern, for example, and a resolution of about 0.1 to 1 μm is currently obtained.

Therefore, even if the resist pattern is exposed by enlarging the mask pattern about 2 to 5 times, the resolution on the resist film of the substrate is about 0.2 to 5 μm, and the driver transistor for the driver is formed on the substrate. This was sufficient for forming a circuit pattern for a liquid crystal display device.

In order to solve the above problems, the present invention takes such a situation into consideration and uses a small number of shots and a small mask to form a mask pattern on a resist film of a large area substrate. It is an object of the present invention to provide a projection exposure apparatus capable of exposing light.

[0011]

A projection exposure apparatus according to the present invention includes a light source, an illumination lens for converting light from the light source into parallel rays, and a magnifying lens arranged so as to be concentric with the illumination lens. , A substrate mounting table provided on the side of the light flux expanded by the magnifying lens, and the pattern of the mask arranged between the illumination lens and the magnifying lens is magnified and fixed on the mounting table. It is projected on the substrate.

[0012]

[Action]

 According to the projection exposure apparatus of the present invention, the mask pattern is expanded and exposed on the resist film of the substrate. Therefore, even if the area of the substrate is large, in the case of the stepper device, the number of shots is reduced once or less. The entire surface can be exposed. Further, in the case of a mirror projection device, it is possible to expose the entire surface of the substrate without using a large mask that may bend.

[0013]

【Example】

 Next, the projection exposure apparatus of the present invention will be described with reference to the drawings.

FIG. 1 is a conceptual diagram showing the configuration of an embodiment of the projection exposure apparatus of the present invention.

As shown in FIG. 1, the projection exposure apparatus of the present invention comprises an illumination system 1, a magnifying lens 2, and an xy table 3 movable in the x-axis and y-axis directions, and a mask 4 of an original plate is an illumination system 1. A substrate 5 such as a semiconductor wafer coated with a resist, which is arranged between the lens and the magnifying lens 2, is fixed on an xy table 3 which is a substrate mounting table.

The illumination system 1 includes a light source 1a such as a high-pressure mercury lamp and an illumination lens 1b. Light emitted from the light source 1a is refracted by the illumination lens 1b and becomes a parallel light beam. It is illuminated with light intensity. Then, the image of the pattern of the mask 4 is formed on the resist film of the substrate 5 by the magnifying lens 2. At this time, by appropriately setting the positions of the magnifying lens 2, the mask 4, the substrate 5 and the like and the focal length of the magnifying lens 2, the pattern of the mask 4 is formed on the resist film of the substrate 5 at a desired magnification. Can be imaged. As the magnifying lens 2, for example, a glass lens can be used.

For example, when the enlargement ratio is set to about 3.5 times, for example, the pattern of the mask 4 having an area of about 127 × 127 mm has an area of about 450 × 450 mm on the resist film of the substrate 5. The pattern is enlarged and transferred.

The projection exposure apparatus of the present invention is not limited to the stepper apparatus shown in FIG. 1, but other structures capable of enlarging and exposing the pattern of the mask 4 such as a mirror projection apparatus. The device may be.

[0019]

[Effect of device]

 According to the projection exposure apparatus of the present invention, the pattern of the mask, which is the original plate, is enlarged and transferred onto the resist film, so that the number of shots can be reduced even when the pattern is exposed on a substrate having a large area. Throughput can be increased. Moreover, since the mask can be made smaller, the mask creation work becomes extremely easy, and an accurate mask can be created at a low cost, and the focus of the image does not deviate due to the bending of the mask, resulting in a large area. The exact pattern can be exposed on any substrate.

[Brief description of drawings]

FIG. 1 is a conceptual diagram showing the configuration of an embodiment of a projection exposure apparatus of the present invention.

[Explanation of symbols]

 1 Illumination System 1a Light Source 1b Illumination Lens 2 Magnifying Lens 3 xy Table 4 Mask 5 Substrate

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Makoto Takamura 21 No. 21 Mizozaki-cho, Saiin, Ukyo-ku, Kyoto ROHM Co., Ltd.

Claims (1)

[Scope of utility model registration request] 1. A light source, an illumination lens for converting light from the light source into parallel rays, a magnifying lens arranged so as to be concentric with the illumination lens, and a light beam side expanded by the magnifying lens. A projection exposure apparatus comprising a substrate mounting table and enlarging a pattern of a mask arranged between the illumination lens and the magnifying lens and projecting the magnified pattern onto a substrate fixed on the mounting table.