JPH07104145A - Waveguide type optical control device - Google Patents

Waveguide type optical control device

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Publication number
JPH07104145A
JPH07104145A JP24515493A JP24515493A JPH07104145A JP H07104145 A JPH07104145 A JP H07104145A JP 24515493 A JP24515493 A JP 24515493A JP 24515493 A JP24515493 A JP 24515493A JP H07104145 A JPH07104145 A JP H07104145A
Authority
JP
Japan
Prior art keywords
mode
optical
waveguide
control device
optical waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24515493A
Other languages
Japanese (ja)
Other versions
JP3398191B2 (en
Inventor
Koji Takemura
浩二 竹村
Yuji Kishida
裕司 岸田
Hirohiko Katsuta
洋彦 勝田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
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Filing date
Publication date
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Priority to JP24515493A priority Critical patent/JP3398191B2/en
Publication of JPH07104145A publication Critical patent/JPH07104145A/en
Application granted granted Critical
Publication of JP3398191B2 publication Critical patent/JP3398191B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To lessen the deterioration in extinction ratio by a deviation in angle of a polarization plate by constituting the optical control device of an optical waveguide in which only the mode of either TM mode or TE mode is guided, metallic electrodes and a polarization plane maintaining optical fibers. CONSTITUTION:This waveguide type optical control device is composed of the optical waveguide which is formed on a substrate consisting of an anisotropic optical crystal and in which only the mode of either the TM mode or the TE mode is guided, the metallic electrodes for controlling the guided light formed on the optical waveguide and at least one piece of the polarization plane maintaining optical fibers arranged at one end of the optical waveguide in order to input and output the guided light. Then, the TE mode is approximately cut off, the ratio at which the TE mode component is excited is low and the modulation efficiency of the TE mode component is poor in the case of guiding with the TM mode even if the deviation in the angle of the polarization plane arises at the time of connecting the polarization plane optical fibers and the optical waveguide. Conversely, the TM mode is cut off, the ratio at which the TM mode component is excited is low and the modulation efficiency of the TM mode component is poor in the case of guiding with the TE mode.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光ファイバ通信システ
ムや光ファイバセンサ、光計測等に用いられる導波路型
光制御デバイスに関する。さらに詳しくは、光導波路デ
バイスと偏波面保存光ファイバとの接続時に生じる偏波
面の角度ズレによる消光比の劣化を小さくした(角度ズ
レに対してトレランスの大きい)導波路型光制御デバイ
スに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waveguide type optical control device used for an optical fiber communication system, an optical fiber sensor, optical measurement and the like. More specifically, the present invention relates to a waveguide type optical control device in which deterioration of an extinction ratio due to an angle deviation of a polarization plane caused when connecting an optical waveguide device and a polarization-maintaining optical fiber is reduced (a tolerance with respect to the angle deviation is large).

【0002】[0002]

【従来の技術】近年、小型で集積化が可能な種々の光導
波路デバイスが提案、実用化されている。特に光制御を
目的とした導波路型光制御デバイスにおいては、結晶方
向により光学特性の異なる、異方性結晶材料を基板とし
て用いることが多いため、通常入出射光ファイバ(特に
入射光ファイバ)に偏波面保存光ファイバが用いられて
いる。これは、特定の導波モード(偏光面が基板に水平
なTEモード、及び偏光面が基板に垂直なTMモード)
に対して所望の光制御を行うために、特定の直線偏光を
入出射する必要があるためである。
2. Description of the Related Art In recent years, various optical waveguide devices which are small and can be integrated have been proposed and put into practical use. In particular, in a waveguide type optical control device for the purpose of optical control, an anisotropic crystal material, which has different optical characteristics depending on the crystal direction, is often used as the substrate, so that it is usually used for an input / output optical fiber (especially an incident optical fiber). Wavefront preserving optical fibers are used. This is a specific guided mode (TE mode whose plane of polarization is horizontal to the substrate and TM mode whose plane of polarization is vertical to the substrate).
This is because it is necessary to input and output specific linearly polarized light in order to perform the desired light control.

【0003】その一例として、図4にマッハツェンダ干
渉計型光変調器(以下、MZ光変調器と記す)の構成を
示す。基板1としてはニオブ酸リチウム(LiNbO3
;以下LNと略記する)基板等が用いられ、Ti等の
金属をこの基板1上にパターニングし、1000℃程度
の高温で拡散することにより、容易に光導波路2を形成
させることができる。この光導波路2上に直接もしくは
バッファ層を介して電極(図示せず)を形成し、光導波
路2の一部分に電界を印加することにより、光パワーの
強度変調を行う。一般に、ZカットLN基板を用いた場
合はTMモードを、またXカットLN基板を用いた場合
はTEモードを用いて動作させるため、入射光ファイバ
3としては偏波面保存光ファイバを用いる必要がある。
なお、図中4は出射光ファイバである。
As an example thereof, FIG. 4 shows the configuration of a Mach-Zehnder interferometer type optical modulator (hereinafter referred to as MZ optical modulator). As the substrate 1, lithium niobate (LiNbO3
A substrate or the like is used, and a metal such as Ti is patterned on this substrate 1 and diffused at a high temperature of about 1000 ° C., whereby the optical waveguide 2 can be easily formed. An electrode (not shown) is formed on the optical waveguide 2 directly or via a buffer layer, and an electric field is applied to a part of the optical waveguide 2 to modulate the intensity of the optical power. Generally, when the Z-cut LN substrate is used, the TM mode is used, and when the X-cut LN substrate is used, the TE mode is used. Therefore, it is necessary to use the polarization-maintaining optical fiber as the incident optical fiber 3. .
In the figure, reference numeral 4 is an output optical fiber.

【0004】従来、こうした導波路型光制御デバイスと
偏波面保存光ファイバとの接続には、偏波面保存光ファ
イバの端面もしくは側面より応力付与部等を観察するこ
とにより偏波面を幾何学的に決めた後、光導波路との位
置合わせを行い接続・固着する方法と、予め同様の方法
にて、V溝を形成したシリコンやセラミックの部材に、
偏波面を決めた状態で接着固定しておき、しかる後にこ
の部材とともに光導波路基板と一体固定する方法がとら
れている。
Conventionally, in the connection between such a waveguide type optical control device and a polarization-maintaining optical fiber, the polarization plane is geometrically observed by observing a stress applying portion or the like from the end face or the side face of the polarization-maintaining optical fiber. After deciding, by a method similar to the method of aligning with the optical waveguide and connecting and fixing, and the same method in advance to the silicon or ceramic member with the V groove formed,
A method is employed in which the polarization plane is fixed and adhered and fixed, and thereafter, this member and the optical waveguide substrate are integrally fixed.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記の
ように導波路型光制御デバイスに偏波面保存光ファイバ
を接続・固着する際に、光導波路に対する偏波面の角度
ズレが生じると、第2図に示すように印加電圧−消光特
性の消光レベルに周期的な変動が生じてしまう。これは
偏波面の角度ズレによって、TEモード成分も励振され
これが印加電界によって変調され、TMモードに重ね合
わせて出力されるためと考えられる。
However, when the polarization plane preserving optical fiber is connected / fixed to the waveguide type optical control device as described above, if an angle deviation of the polarization plane with respect to the optical waveguide occurs, FIG. As shown in (4), the applied voltage-extinction level of the extinction characteristic changes periodically. It is considered that this is because the TE mode component is also excited due to the angle shift of the plane of polarization, this is modulated by the applied electric field, and superimposed on the TM mode and output.

【0006】上記のMZ型光変調器が理想的に形成され
た場合、すなわち入力側分岐部21で分岐された導波光
の位相が、出力側Y分岐部23で合流する際に全く一致
するように光導波路が形成された場合、TM及びTEモ
ードのいずれで動作させても0Vで光出力が最大とな
る。結果としてTMモードで動作させる場合に、少しで
も角度ズレが生じてしまうと、通常変調器として使用す
る0V近傍の消光比が特に劣化してしまい、作製歩留ま
りが悪くなるという問題点があった。ちなみに、20d
B以上の高消光比を実現するためには、この角度ズレを
±0.5°以内に抑える必要がある。一般に±3°程度
のトレランスがあれば、作製は容易であるが、±0.5
°以内のトレランスに抑えるためには、アライメントに
非常に時間がかかり量産性に乏しくなる。
When the above-mentioned MZ type optical modulator is ideally formed, that is, the phases of the guided light beams branched by the input side branching section 21 are exactly the same when they are joined by the output side Y branching section 23. When the optical waveguide is formed in the optical waveguide, the optical output becomes maximum at 0 V regardless of whether the optical waveguide is operated in the TM mode or the TE mode. As a result, when the device is operated in the TM mode, if there is a slight angle deviation, the extinction ratio in the vicinity of 0 V used as a normal modulator is particularly deteriorated, and the manufacturing yield is deteriorated. By the way, 20d
In order to realize a high extinction ratio of B or more, it is necessary to suppress this angular deviation within ± 0.5 °. Generally, if it has a tolerance of ± 3 °, it is easy to manufacture, but ± 0.5
In order to keep the tolerance within °, alignment takes a very long time and mass productivity becomes poor.

【0007】また、これを補償するために出力側導波路
端面や、出力光ファイバに高消光比の偏光子を取り付け
る方法が提案されているが、工程が複雑になるばかりで
なく、位置ズレ量がそのまま損失増加になってしまうと
いう欠点があった。
In order to compensate for this, a method of attaching a polarizer having a high extinction ratio to the end face of the waveguide on the output side or to the output optical fiber has been proposed, but it not only complicates the process, but also the amount of positional deviation. However, there was a drawback that the loss would increase.

【0008】[0008]

【課題を解決するための手段】上記問題点を解決するた
めに、本発明の導波路型光制御デバイスは、異方性光学
結晶の基板上に形成され、TMモード又はTEモードの
いずれか一方のみのモードが導波される光導波路と、光
導波路上に形成した導波光制御用の金属電極と、光導波
路の一端部に導波光を入出力するために配置した少なく
とも1本の偏波面保存光ファイバとから成る。すなわ
ち、光導波路はTMモード又はTEモードのいずれか一
方のモードで導波し、且つ他方のモードで略カットオフ
になる。ここで、略カットオフとは角度ズレが生じても
所望の消光比が得られる程度にしかTEモード成分が励
振されない条件である。
In order to solve the above problems, a waveguide type optical control device of the present invention is formed on a substrate made of an anisotropic optical crystal and has either a TM mode or a TE mode. Optical waveguide that guides only mode, metal electrode for controlling guided light formed on the optical waveguide, and at least one polarization plane preservation arranged at one end of the optical waveguide to input / output guided light It consists of an optical fiber. That is, the optical waveguide guides in either one of the TM mode and the TE mode, and is substantially cut off in the other mode. Here, “substantially cutoff” is a condition in which the TE mode component is excited only to such an extent that a desired extinction ratio can be obtained even if an angular deviation occurs.

【0009】[0009]

【作用】上記構成により、偏波面光ファイバと光導波路
を接続する際に、偏波面の角度ズレが生じても、TMモ
ードで導波する場合は、TEモードが略カットオフとな
るので、TEモード成分が励振される割合が少なく、か
つTEモード成分の変調効率も悪くなるので、印加電圧
が0Vの近傍はもとより、広範囲の印加電圧に対しても
TMモード動作での高消光比を維持することができる。
逆に、TEモードで導波する場合は、TMモードがカッ
トオフとなるのでTMモード成分が励振される割合が少
なく、かつTMモード成分の変調効率が悪くなるので、
広範囲の印加電圧に対してもTEモード動作での高消光
比を維持することができる。
With the above configuration, when the polarization plane optical fiber and the optical waveguide are connected, even if the polarization plane is misaligned, the TE mode is substantially cut off when guided in the TM mode. Since the proportion of mode components being excited is small and the modulation efficiency of TE mode components is poor, a high extinction ratio in TM mode operation is maintained not only near an applied voltage of 0 V but also in a wide range of applied voltages. be able to.
On the contrary, when the wave is guided in the TE mode, the TM mode is cut off, so that the proportion of the TM mode component excited is small and the modulation efficiency of the TM mode component is deteriorated.
It is possible to maintain a high extinction ratio in the TE mode operation for a wide range of applied voltages.

【0010】[0010]

【実施例】以下に、図1乃至図3を用いて本発明の導波
路型光制御デバイスについて詳細に説明する。ここでは
簡単のため、図4に示す従来のMZ光変調器を用いて説
明する。先ず図3に基づいて、本発明の導波路型光制御
デバイスの作製条件について説明する。光導波路の製造
方法は公知の技術であるTi拡散により作製し、まず、
デバイスを作製する前にZカットLN基板上に、光導波
路となるTiストライプ幅を変化させた直線導波路を作
製し、NFP(ニアーフィールドパターン)測定装置を
用いて、そのスポットサイズの測定を行い、シングルモ
ード導波となる条件を検討した。ここでは、Ti膜厚1
200Å、拡散条件は拡散温度1050℃、拡散時間
3.5時間とした。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The waveguide type optical control device of the present invention will be described in detail below with reference to FIGS. Here, for simplicity, description will be given using the conventional MZ optical modulator shown in FIG. First, the manufacturing conditions of the optical waveguide control device of the present invention will be described with reference to FIG. The manufacturing method of the optical waveguide is manufactured by Ti diffusion which is a known technique.
Before manufacturing the device, a linear waveguide having a Ti stripe width changed to be an optical waveguide was prepared on a Z-cut LN substrate, and its spot size was measured using an NFP (near field pattern) measuring device. , The conditions for single-mode waveguide were examined. Here, Ti film thickness 1
The diffusion conditions were 200 Å, the diffusion temperature was 1050 ° C., and the diffusion time was 3.5 hours.

【0011】図3から判る様に、ZカットLN基板では
TEモードでのスポットサイズはTMモードでのスポッ
トサイズより大きく、シングルモードで導波するTiス
トライプ幅も広い。TMモード動作で低駆動電圧を実現
するためには、スポットサイズが最小となる6μm幅
で、図4に示すようなデバイスを作製するのが良いとさ
れている。図2はこの条件で作製したMZ型光変調器の
印加電圧−光変調特性を示すグラフである。なお、ここ
での偏波面の位置合わせ精度は±3°程度で、基板の垂
直方向に完全に一致していない。先に述べた様に、この
Tiストライプ幅でデバイスを作製すると、TMモード
だけでなく、TEモードでもスポットサイズが小さくな
り、図2に見られる様に、偏波面の角度ズレによると見
られる消光特性のバラツキが見られる。特に0V近傍で
消光比が大きく劣化しているのが判る。
As can be seen from FIG. 3, in the Z-cut LN substrate, the spot size in the TE mode is larger than that in the TM mode, and the width of the Ti stripe guided in the single mode is also wide. In order to realize a low driving voltage in the TM mode operation, it is considered preferable to fabricate a device as shown in FIG. 4 with a width of 6 μm that minimizes the spot size. FIG. 2 is a graph showing applied voltage-optical modulation characteristics of the MZ type optical modulator manufactured under these conditions. The alignment accuracy of the polarization plane here is about ± 3 °, which does not completely match the vertical direction of the substrate. As described above, when a device is manufactured with this Ti stripe width, the spot size is reduced not only in the TM mode but also in the TE mode, and as shown in FIG. 2, the extinction which is considered to be caused by the angle deviation of the polarization plane. There are variations in characteristics. In particular, it can be seen that the extinction ratio is greatly deteriorated near 0V.

【0012】これに対して、Tiストライプ幅4μmで
作製した印加電圧−光変調特性を図1に示す。この条件
では、TMモードのスポットサイズが若干大きくなり、
駆動電圧が少し大きくなっているものの、TEモードが
カットオフ条件に近いために印加電圧による消光比のバ
ラツキが小さく、0V近傍での消光比も20dB以上を
実現している。また、幅広い印加電圧範囲に対して消光
比のバラツキがほとんど見られない。
On the other hand, FIG. 1 shows applied voltage-optical modulation characteristics produced with a Ti stripe width of 4 μm. Under this condition, the TM mode spot size becomes slightly larger,
Although the driving voltage is slightly higher, the variation of the extinction ratio due to the applied voltage is small because the TE mode is close to the cutoff condition, and the extinction ratio near 0 V is 20 dB or more. Further, there is almost no variation in the extinction ratio over a wide applied voltage range.

【0013】上記実施例においては、ZカットLN基板
を用いて説明したが、XカットLN基板を用いて同様な
導波を行うと、ZカットLN基板とは逆の結果となる。
すなわち、TMモードでのスポットサイズはTEモード
でのスポットサイズより大きくなり、TEモードで導波
し、TMモード成分が励振される割合が少なく、かつT
Mモード成分の変調効率が悪くなるので、TMモードで
略カットオフとなり、広範囲の印加電圧に対してもTE
モード動作での高消光比を維持することができるのであ
る。
In the above embodiment, the Z-cut LN substrate is used for explanation, but if the same waveguiding is performed by using the X-cut LN substrate, the result opposite to that of the Z-cut LN substrate is obtained.
That is, the spot size in the TM mode is larger than the spot size in the TE mode, the TE mode is guided, and the proportion of the TM mode component excited is small.
Since the modulation efficiency of the M-mode component becomes poor, the cut-off is almost made in the TM mode, and TE can be applied to a wide range of applied voltage.
It is possible to maintain a high extinction ratio in mode operation.

【0014】なお、上記実施例では一定のTi膜厚、一
定の拡散条件について説明したが、設計上異なるTi膜
厚や、異なる拡散条件でこれを実現できることは言う迄
もない。すなわち、Tiストライプ幅、Ti膜厚、拡散
温度、拡散時間の4つのパラメータのうち3つを一定と
して本発明の導波路型光制御デバイスを作製することが
可能である。
In the above embodiment, a constant Ti film thickness and a constant diffusion condition have been described, but it goes without saying that this can be realized under different design Ti film thicknesses and different diffusion conditions. That is, it is possible to manufacture the waveguide type optical control device of the present invention with three of the four parameters of the Ti stripe width, the Ti film thickness, the diffusion temperature and the diffusion time being constant.

【0015】また、MZ型光変調器についての特性例を
用いて本発明の有効性を説明したが、TMモード又はT
Eモードのみを導波する光制御を行うデバイスであれ
ば、その基板材料等に関係なくどのようなものであって
も、適宜変更等を行い実施することが可能である。
Further, the effectiveness of the present invention has been described by using the characteristic example of the MZ type optical modulator.
As long as the device controls light in the E mode only, the device can be appropriately modified and implemented regardless of the substrate material or the like.

【0016】[0016]

【発明の効果】本発明の導波路型光制御デバイスによ
り、偏波面保存光ファイバとの接続が容易に行え、生産
性に優れた導波路型光制御デバイスを提供することがで
きる。また広範囲の印加電圧に対してもTMモード動作
又はTEモード動作での高消光比を維持することが可能
となる。
According to the waveguide type optical control device of the present invention, a waveguide type optical control device which can be easily connected to a polarization maintaining optical fiber and is excellent in productivity can be provided. Further, it becomes possible to maintain a high extinction ratio in the TM mode operation or the TE mode operation for a wide range of applied voltages.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の導波路型光制御デバイスの一実施例を
説明するための、印加電圧−光出力特性図。
FIG. 1 is an applied voltage-optical output characteristic diagram for explaining an example of a waveguide type optical control device of the present invention.

【図2】従来の導波路型光制御デバイスの問題点を説明
するための、印加電圧−光出力特性図。
FIG. 2 is an applied voltage-optical output characteristic diagram for explaining the problems of the conventional waveguide type optical control device.

【図3】本発明と従来の導波路型光制御デバイスの作製
条件の違いを説明するための、スポットサイズのTiス
トライプ幅依存性を示すグラフ。
FIG. 3 is a graph showing the dependency of spot size on the Ti stripe width, for explaining the difference in the fabrication conditions between the present invention and the conventional waveguide type optical control device.

【図4】従来の導波路型光制御デバイスの概要を説明す
るための斜視図。
FIG. 4 is a perspective view for explaining an outline of a conventional waveguide type optical control device.

【符号の説明】[Explanation of symbols]

1 ・・・ 基板 2 ・・・ 光導波
路 3 ・・・ 入射光ファイバ 4 ・・・ 出射光
ファイバ
1 ... Substrate 2 ... Optical waveguide 3 ... Incident optical fiber 4 ... Outgoing optical fiber

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 異方性光学結晶の基板上に形成され、T
Mモード又はTEモードのいずれか一方のみのモードが
導波される光導波路と、該光導波路上に形成した導波光
制御用の金属電極と、前記光導波路の一端部に導波光を
入出力するために配置した少なくとも1本の偏波面保存
光ファイバとから成る導波路型光制御デバイス。
1. A T formed on a substrate of an anisotropic optical crystal,
An optical waveguide that guides only one of the M mode and the TE mode, a metal electrode for controlling the guided light formed on the optical waveguide, and input / output of guided light to one end of the optical waveguide. A waveguide-type optical control device comprising at least one polarization-maintaining single-mode optical fiber arranged for this purpose.
JP24515493A 1993-09-30 1993-09-30 Waveguide type optical control device Expired - Fee Related JP3398191B2 (en)

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JP24515493A JP3398191B2 (en) 1993-09-30 1993-09-30 Waveguide type optical control device

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JP24515493A JP3398191B2 (en) 1993-09-30 1993-09-30 Waveguide type optical control device

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JPH07104145A true JPH07104145A (en) 1995-04-21
JP3398191B2 JP3398191B2 (en) 2003-04-21

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