JPH07104131B2 - Method and device for separating diffracted light - Google Patents
Method and device for separating diffracted lightInfo
- Publication number
- JPH07104131B2 JPH07104131B2 JP62004133A JP413387A JPH07104131B2 JP H07104131 B2 JPH07104131 B2 JP H07104131B2 JP 62004133 A JP62004133 A JP 62004133A JP 413387 A JP413387 A JP 413387A JP H07104131 B2 JPH07104131 B2 JP H07104131B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- diffraction grating
- diffracted light
- diffracted
- diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Optical Integrated Circuits (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばLSIを製造するための露光装置におい
て、マスクとウエハ間の位置ずれを、マスクおよびウエ
ハ上に形成した回折格子を利用して検出する際などに用
いられる光学系に関し、特に、各回折格子からの回折光
を分離して取出すための分離方法および分離装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention uses, in an exposure apparatus for manufacturing an LSI, for example, a positional deviation between a mask and a wafer by using a diffraction grating formed on the mask and the wafer. TECHNICAL FIELD The present invention relates to an optical system used when detecting by means of, for example, a separation method and a separation device for separating and extracting diffracted light from each diffraction grating.
LSIの微細化に伴い、マスクパタンをウエハに転写する
露光装置などにおいて、マスクとウエハとを互いに高精
度に位置合せすることが要求されている。特に、X線露
光装置では、マスクとウエハとを数10μmのギヤツプに
維持した状態で、マスクとウエハとの位置合せを行なう
必要がある。Along with the miniaturization of LSIs, it is required to align a mask and a wafer with each other with high accuracy in an exposure apparatus that transfers a mask pattern onto a wafer. Particularly, in the X-ray exposure apparatus, it is necessary to align the mask and the wafer with the mask and the wafer maintained at a gear gap of several tens of μm.
そのための方法として、出願人は先に、特願昭61−1041
86号において、光ヘテロダイン干渉法を利用した位置合
せ方法を提案した。この方法について、第3図を用いて
説明する。As a method for that purpose, the applicant has previously filed Japanese Patent Application No. Sho 61-1041.
In No.86, we proposed a registration method using optical heterodyne interferometry. This method will be described with reference to FIG.
第3図において、2波長直交偏光レーザー光源1から発
した光は、ミラー2、円筒レンズ3を通して楕円状のビ
ームとなり、そのビームは偏光ビームスプリツター4に
より、それぞれ水平成分、あるいは垂直成分のみを有す
る直線偏光でしかも周波数が互いにわずかに異なる2波
長の光に分離される。分離された光は、それぞれミラー
5a,5b(入射角調整手段)を介して所望の入射角で、マ
スク6に形成した反射型回折格子7およびウエハ8に形
成した反射型回折格子9に入射する。第3図の例では、
反射型回折格子7,9はそれぞれ格子ライン方向にずれて
おり、しかも2波長の入射光の同一楕円ビーム内に配置
されている。また、反射型回折格子7,9の回折格子ピツ
チは等しく設定されている。回折格子7から得られる回
折光およびマスク6に設けた窓10を通して回折格子9か
ら得られる回折光は、ミラー5c(光合成手段)、プリズ
ム状ミラー11(光分離手段)、偏光板12a,12b,集光レン
ズ13a,13bを介して光検出器14a,14bにそれぞれ導かれ、
回折光ビート信号として信号処理制御部15で処理され
る。In FIG. 3, the light emitted from the two-wavelength orthogonal polarization laser light source 1 becomes an elliptical beam through the mirror 2 and the cylindrical lens 3, and the beam has only a horizontal component or a vertical component by the polarization beam splitter 4. It is split into two linearly polarized lights having two different wavelengths. Each separated light is a mirror
The light enters the reflective diffraction grating 7 formed on the mask 6 and the reflective diffraction grating 9 formed on the wafer 8 at a desired incident angle via 5a and 5b (incident angle adjusting means). In the example of FIG.
The reflection type diffraction gratings 7 and 9 are displaced in the grating line direction, respectively, and are arranged in the same elliptical beam of incident light of two wavelengths. Further, the diffraction grating pitches of the reflection type diffraction gratings 7 and 9 are set to be equal. The diffracted light obtained from the diffraction grating 7 and the diffracted light obtained from the diffraction grating 9 through the window 10 provided in the mask 6 are mirror 5c (light combining means), prismatic mirror 11 (light separating means), polarizing plates 12a, 12b, The light is guided to the photodetectors 14a and 14b via the condenser lenses 13a and 13b, respectively,
The diffracted light beat signal is processed by the signal processing control unit 15.
信号処理制御部15では、反射型回折格子7,9から得られ
た回折光のそれぞれのビート信号のいずれか一方の信号
を基準ビート信号として両ビート信号の位相差を検出
し、その位相差が0゜になるようにマスクステージ16,
あるいはウエハステージ17を相対移動させ、マスク面上
のパタンがウエハ面上の所定の位置に精度よく重なつて
露光できるようにマスク6とウエハ8との間の精密な位
置合わせを行なう。The signal processing control unit 15 detects the phase difference between both beat signals by using one of the beat signals of the diffracted light obtained from the reflection type diffraction gratings 7 and 9 as a reference beat signal, and the phase difference is detected. Mask stage 16, so that it becomes 0 °
Alternatively, the wafer stage 17 is relatively moved, and the mask 6 and the wafer 8 are precisely aligned so that the pattern on the mask surface can be accurately overlapped and exposed at a predetermined position on the wafer surface.
第3図に示す光学系において、反射形回折格子7,9より
得られる回折光は、プリズム状ミラー11の先端エツジを
構成する両面によつて反射され、光検出器14a,14bで受
光される。このとき、プリズムの先端エツジは、通常丸
みをもち、一方、回折光ビームも数100μmの大きさ
(径)をもつため、回折光を分離,独立して検出するた
めには、第4図に示すように、反射形回折格子7,9の格
子ライン方向の間隔lを、約1mm程度は離す必要があ
る。したがつて、両回折格子を同一のビームスポツト21
内に入れるためには、入射光(第4図には一方のみ示し
た)22を構成する楕円状レーザービームの長径を大きく
しなければならず、そうすると、レーザー光源1の出力
が同じである場合には回折格子に入射するレーザー光の
平均照射強度が低下し、得られる回折光23,24の強度も
小さくなり、その結果、検出精度も低下するという問題
がある。In the optical system shown in FIG. 3, the diffracted light obtained from the reflection type diffraction gratings 7 and 9 is reflected by both surfaces constituting the tip edge of the prismatic mirror 11 and received by the photodetectors 14a and 14b. . At this time, the edge of the prism is usually rounded, while the diffracted light beam also has a size (diameter) of several 100 μm. Therefore, in order to separate and detect the diffracted light independently, see FIG. As shown, it is necessary to separate the reflective diffraction gratings 7 and 9 in the grating line direction by a distance l of about 1 mm. Therefore, both diffraction gratings should have the same beam spot 21.
In order to enter inside, the major axis of the elliptical laser beam that constitutes the incident light (only one of which is shown in FIG. 4) 22 must be increased, and if the output of the laser light source 1 is the same, There is a problem in that the average irradiation intensity of the laser light incident on the diffraction grating is reduced, the intensity of the diffracted light 23, 24 obtained is also reduced, and as a result, the detection accuracy is also reduced.
また、ウエハ面もしくはマスク面上に設ける回折格子7,
9のいずれか一方は、LSIパタン等の露光領域(デバイス
領域)25,26から少なくとも1mm程度離して配置しなけれ
ばならないこととなり、広いアライメントマーク領域が
必要となる。Further, the diffraction grating 7 provided on the wafer surface or the mask surface,
Either one of them must be placed at least about 1 mm away from the exposure areas (device areas) 25, 26 such as LSI patterns, and a wide alignment mark area is required.
本発明による回折光の分離方法は、回折格子に照射する
光として、各回折格子からの回折光を分離して検出でき
るように収束光または発散光を用いたものである。The method for separating diffracted light according to the present invention uses convergent light or divergent light so that the diffracted light from each diffraction grating can be separated and detected as the light with which the diffraction grating is irradiated.
また本発明による回折光の分離装置は、光源装置および
回折光を検出する手段の他に、光源装置からの光を収束
または発散させる手段を備えたものである。The diffracted light separation device according to the present invention includes means for converging or diverging the light from the light source device, in addition to the light source device and the means for detecting the diffracted light.
回折格子に発散光を照射して得られる回折光は発散光と
なり、回折格子から離れるにしたがつて両回折格子から
の回折光は分離される。収束光を照射する場合には、回
折光はいつたん収束した後、発散するため、上述したと
同様に両回折格子からの回折光は分離される。The diffracted light obtained by irradiating the diffraction grating with divergent light becomes divergent light, and the diffracted light from both diffraction gratings is separated as the distance from the diffraction grating increases. When the convergent light is applied, the diffracted light converges and then diverges, so that the diffracted lights from both diffraction gratings are separated as described above.
第1図は本発明をX線露光装置に適用した場合の一実施
例を示す概略構成図であり、第3図と同一部分は同一符
号を用いて示し、その詳細説明は省略する。FIG. 1 is a schematic configuration diagram showing an embodiment in which the present invention is applied to an X-ray exposure apparatus. The same parts as those in FIG. 3 are denoted by the same reference numerals, and detailed description thereof will be omitted.
第1図において、31a,31bは集光レンズであり、楕円状
ビームの長径方向のみを集光する。このとき、各集光レ
ンズ31a,31bは、その焦点が反射形回折格子7,9の手前に
位置するように、いわゆる前ピンの状態に配置するた
め、反射形回折格子7,9への入射光32,33は、発散光とな
つて入射する。その結果、各回折格子からの回折光34,3
5は発散光となり、回折格子7,9から離れるにしたがつて
分離される。このため、両反射形回折格子7,9を相互に
近接して配置しても、それぞれの回折光を容易に分離・
独立して検出できる。このとき、両回折格子に照射され
る楕円状レーザービームのスポツト径は小さくてよいた
め、回折光強度を強くすることができ、検出信号のS/N
比を向上させることができる。In FIG. 1, 31a and 31b are condenser lenses, which condense only the major axis direction of the elliptical beam. At this time, since each focusing lens 31a, 31b is arranged in a so-called front pin state so that its focal point is located in front of the reflection type diffraction gratings 7, 9, the light is incident on the reflection type diffraction gratings 7, 9. The light 32, 33 enters as divergent light. As a result, the diffracted light from each diffraction grating 34,3
5 becomes divergent light, and is separated as it moves away from the diffraction gratings 7 and 9. Therefore, even if the two reflection type diffraction gratings 7 and 9 are arranged close to each other, the respective diffracted lights can be easily separated and separated.
Can be detected independently. At this time, since the spot diameter of the elliptical laser beam applied to both diffraction gratings may be small, the diffracted light intensity can be increased and the S / N of the detection signal can be increased.
The ratio can be improved.
本実施例では、集光レンズ31a,31bを、その焦点が反射
形回折格子7,9の手前にくるように配置したが、逆に、
焦点位置が両回折格子7,9の後方にくるように、いわゆ
る後ピンの状態となるように配置してもよい。その場
合、第2図に示すように、入射光(第2図には一方のみ
示した)36は、反射形回折格子7,9には収束光として入
射する。37はそのときのビームスポツトである。このた
め、回折光38,39は、いつたん収束した後、発散する。
したがつて、発散光を入射させた第1図の場合と同様
に、両回折光を容易に分離・独立して検出できる。In this embodiment, the condenser lenses 31a and 31b are arranged so that their focal points are in front of the reflection type diffraction gratings 7 and 9, but conversely,
You may arrange | position so that a focus position may come to the back of both diffraction gratings 7 and 9, and may be in what is called a back pin state. In that case, as shown in FIG. 2, incident light (only one of which is shown in FIG. 2) 36 is incident on the reflection type diffraction gratings 7 and 9 as converged light. 37 is the beam spot at that time. For this reason, the diffracted lights 38 and 39 converge and then diverge.
Therefore, both diffracted lights can be easily separated and independently detected as in the case of FIG. 1 in which divergent light is incident.
なお、第1図において、集光レンズ31a,31bはミラー5a,
5bとマスク6との間に配置したが、偏光ビームスプリツ
タ4とミラー5a,5bとの間に挿入してもよい。In FIG. 1, the condenser lenses 31a and 31b are the mirrors 5a and
Although it is arranged between 5b and the mask 6, it may be inserted between the polarized beam splitter 4 and the mirrors 5a and 5b.
各回折格子は、吸収形あるいは反射形のいずれでもよ
く、さらにバイナリー回折格子に限定されることなく、
正弦波状回折格子、フレーズ回折格子など種々の組み合
わせが可能である。Each diffraction grating may be either an absorption type or a reflection type, and is not limited to a binary diffraction grating,
Various combinations such as a sinusoidal diffraction grating and a phrase diffraction grating are possible.
さらに上記実施例では、単色光入射・回折光取り出し窓
としてマスク基板上に開口部を設けたが、開口部を設け
ることなく、入射光および回折光が透過し得る透明薄膜
の窓にした場合においても同様の効果を得ることができ
る。Further, in the above-mentioned embodiment, the opening was provided on the mask substrate as a monochromatic light incident / diffracted light extraction window, but in the case of a transparent thin film window through which incident light and diffracted light can pass without providing an opening. Can also obtain the same effect.
以上、位置合わせに用いる場合を中心に説明したが、本
発明は、ある物体の微小変位を測定する装置、座標位置
検出または制御装置等に対しても適用することが可能で
ある。The description has been given above centering on the case of using for position alignment, but the present invention can also be applied to an apparatus for measuring a minute displacement of an object, a coordinate position detection or control apparatus, or the like.
本発明によれば、回折格子に照射する光を収束光または
発散光とすることにより、近接して配置した回折格子か
らの回折光を容易に分離できる。ビーム径を絞つた状態
で照射できるため、同一の光源出力に対して得られる回
折光の強度も大きくなり、S/N比が向上し、位置合せ等
に利用した場合にその精度を高めることができる。ま
た、例えばX線露光装置に適用した場合などは、アライ
メントマーク領域が小さくて済むため、本来の露光パタ
ン領域を大きくとることができる利点がある。According to the present invention, by making the light irradiating the diffraction grating be convergent light or divergent light, it is possible to easily separate the diffracted light from the diffraction grating arranged in close proximity. Since the beam can be emitted with a narrow beam diameter, the intensity of the diffracted light obtained for the same light source output also increases, improving the S / N ratio, and improving the accuracy when used for alignment etc. it can. In addition, for example, when it is applied to an X-ray exposure apparatus, the alignment mark area can be small, so that there is an advantage that the original exposure pattern area can be made large.
第1図および第2図は本発明の一実施例を示す図で、第
1図は概略構成図、第2図は回折格子部分の詳細図、第
3図は従来例を示す概略構成図、第4図はその回折格子
部分の詳細図である。 1……2波長直交偏光レーザー光源、7,9……回折格
子、11……プリズム状ミラー、14a,14b……光検出器、3
1a,31b……集光レンズ、32,33,36……入射光、34,35,3
8,39……回折光、37……ビームスポツト。1 and 2 are views showing an embodiment of the present invention, FIG. 1 is a schematic configuration diagram, FIG. 2 is a detailed diagram of a diffraction grating portion, and FIG. 3 is a schematic configuration diagram showing a conventional example, FIG. 4 is a detailed view of the diffraction grating portion. 1 …… 2-wavelength orthogonal polarization laser light source, 7,9 …… diffraction grating, 11 …… prism mirror, 14a, 14b …… photodetector, 3
1a, 31b …… Condensing lens, 32,33,36 …… Incoming light, 34,35,3
8,39 ... Diffracted light, 37 ... Beam spot.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/027 21/68 F G02B 6/12 A ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/027 21/68 F G02B 6/12 A
Claims (2)
した複数の回折格子に対し、各回折格子からの回折光を
分離して検出するための収束光または発散光を各回折格
子が同一のスポツト内に入るように照射し、各回折格子
から得られる回折光を独立に取出すことを特徴とする回
折光の分離方法。1. A plurality of diffraction gratings arranged such that their grating lines are parallel to each other, the convergent light or divergent light for separating and detecting the diffracted light from each diffraction grating is the same for each diffraction grating. A method for separating diffracted light, which comprises irradiating the light so that it enters the spot and independently extracting the diffracted light obtained from each diffraction grating.
装置から発せられた光を収束または発散させ、複数の回
折格子に対し、各回折格子が同一のスポツト内に入るよ
うにして照射する手段と、各回折格子から得られた回折
光をそれぞれ検出する手段とを備えたことを特徴とする
回折光の分離装置。2. A light source device for emitting spot light and a means for converging or diverging the light emitted from this light source device and irradiating a plurality of diffraction gratings so that each diffraction grating enters the same spot. And a device for detecting diffracted light obtained from each diffraction grating, respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62004133A JPH07104131B2 (en) | 1987-01-13 | 1987-01-13 | Method and device for separating diffracted light |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62004133A JPH07104131B2 (en) | 1987-01-13 | 1987-01-13 | Method and device for separating diffracted light |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63172905A JPS63172905A (en) | 1988-07-16 |
JPH07104131B2 true JPH07104131B2 (en) | 1995-11-13 |
Family
ID=11576280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62004133A Expired - Fee Related JPH07104131B2 (en) | 1987-01-13 | 1987-01-13 | Method and device for separating diffracted light |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07104131B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288906A (en) * | 1988-09-27 | 1990-03-29 | Matsushita Electric Ind Co Ltd | Alignment optical system |
TWI481968B (en) * | 2006-09-08 | 2015-04-21 | 尼康股份有限公司 | A mask, an exposure device, and an element manufacturing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59132311A (en) * | 1983-01-18 | 1984-07-30 | Sony Magnescale Inc | Optical scale |
-
1987
- 1987-01-13 JP JP62004133A patent/JPH07104131B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPS63172905A (en) | 1988-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0906590B1 (en) | Lithographic projection apparatus with off-axis alignment unit | |
US5481362A (en) | Apparatus for projecting a mask pattern on a substrate | |
KR0158681B1 (en) | Apparatus for projecting a mask pattern on a substrate | |
JP2514037B2 (en) | Detection optical system | |
JPS6011325B2 (en) | scanning device | |
NL7904579A (en) | OPTICAL IMAGING SYSTEM INCLUDING AN OPTO-ELECTRONIC DETECTION SYSTEM FOR DETERMINING A DEROGATION BETWEEN THE IMAGE SCREEN AND A SECOND PLACE TO BE IMAGES ON. | |
GB2139753A (en) | Sensing relative position of alignment marks | |
JP2575621B2 (en) | Mask pattern imaging device | |
JP2634620B2 (en) | Projection type exposure method and apparatus | |
EP0458354B1 (en) | A compact reticle/wafer alignment system | |
US4932781A (en) | Gap measuring apparatus using interference fringes of reflected light | |
US5859439A (en) | Apparatus for aligning semiconductor wafer using mixed light with different wavelengths | |
JPH0145973B2 (en) | ||
JPH0749926B2 (en) | Alignment method and alignment device | |
JPH04236307A (en) | Detecting device of three-dimensional shape of pattern | |
JPH07104131B2 (en) | Method and device for separating diffracted light | |
JPS6161178B2 (en) | ||
JPH02191314A (en) | Pattern detector | |
JP2578742B2 (en) | Positioning method | |
JPH07311009A (en) | Position detection device | |
JPH01240801A (en) | Apparatus and method for detecting position | |
JPH04177104A (en) | Optical device using acousto-optic element | |
JPH1089918A (en) | Alignment device | |
JPS6172214A (en) | Focus detector | |
JPH0274802A (en) | Alignment apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |