JPH07102732B2 - Method for forming fine resist pattern - Google Patents

Method for forming fine resist pattern

Info

Publication number
JPH07102732B2
JPH07102732B2 JP3245191A JP3245191A JPH07102732B2 JP H07102732 B2 JPH07102732 B2 JP H07102732B2 JP 3245191 A JP3245191 A JP 3245191A JP 3245191 A JP3245191 A JP 3245191A JP H07102732 B2 JPH07102732 B2 JP H07102732B2
Authority
JP
Japan
Prior art keywords
ink
image
resist pattern
plate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3245191A
Other languages
Japanese (ja)
Other versions
JPH04249189A (en
Inventor
健一 久保薗
暁 岡崎
健二 浅香
一範 中村
Original Assignee
株式会社ジーティシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社ジーティシー filed Critical 株式会社ジーティシー
Priority to JP3245191A priority Critical patent/JPH07102732B2/en
Publication of JPH04249189A publication Critical patent/JPH04249189A/en
Publication of JPH07102732B2 publication Critical patent/JPH07102732B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Printing Methods (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【産業上の利用分野】本発明は、半導体装置等を製造す
るためのフォトリングラフィー技術で用いるレジストパ
ターンを高精度にかつ量産的に形成できる方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method capable of forming a resist pattern used in a photolinography technique for manufacturing a semiconductor device or the like with high accuracy and in a large scale.

【従来の技術】薄膜トランジスター(TFT)によって
各画素のスイッチングを行うアクティブマトリックス方
式の液晶ディスプレイ(LCD)は、高画質を得ること
ができる利点を有している。このアクティブマトリック
ス方式のLCDは、ポケットTV、ポータブルTV用と
して実用化の段階に入っており、近年は、この液晶ディ
スプレイを対角20インチ、40インチ、70インチと
大型化するための研究が盛んに行なわれている。ところ
でこの液晶ディスプレイを大型化する場合、液晶ディス
プレイのTFTの部分を製作する際に行なわれているフ
ォトリングラフィー工程、つまりレジストを塗布、露
光、現像してレジストパターンを形成した後エッチング
処理を行うフォトリソグラフィー工程で用いる製造装
置、特に大型露光装置を開発するために莫大な費用が必
要になる問題が生じている。このような問題に対処する
ために、従来より、金属板のエッチング用レジストパタ
ーンや回路パターンを形成する際に広く採られているス
クリーン印刷法やオフセット印刷法を利用することが提
案されている。
2. Description of the Related Art An active matrix type liquid crystal display (LCD) in which each pixel is switched by a thin film transistor (TFT) has an advantage that high image quality can be obtained. This active matrix type LCD is in the stage of practical application for pocket TVs and portable TVs, and in recent years, research has been actively conducted to increase the size of this liquid crystal display to 20 inches, 40 inches, and 70 inches diagonally. Has been done to. By the way, in the case of enlarging this liquid crystal display, a photolinography process which is performed when manufacturing a TFT portion of the liquid crystal display, that is, a resist pattern is formed by applying a resist, exposing and developing, and then performing an etching process. There is a problem that enormous cost is required to develop a manufacturing apparatus used in a photolithography process, especially a large-sized exposure apparatus. In order to deal with such a problem, it has been proposed to use a screen printing method or an offset printing method, which has been widely adopted when forming a resist pattern for etching a metal plate or a circuit pattern.

【発明が解決しようとする課題】スクリーン印刷法はメ
ッシュ状スクリーンに所定のパターンのインキ遮蔽マス
クを形成し、貫通透過部からインキを通過させて被印刷
体に付着させることにより印刷を行う方法である。この
印刷法ではインキの厚刷り(数μm〜20μm厚)が容
易なので、耐食性に優れたレジストパターンを印刷でき
る利点がある。しかしながらこのスクリーン印刷法で
は、200μm以下の微細なパターンの印刷が困難であ
る。また、オフセット印刷法は、PS版に親油性部と親
水性部を形成し、親水性部に水分を保持させて油性イン
キを反発させ、親油性部のみに選択的にインキを付着さ
せ、かかるインキパターンを被印刷体に印刷する方法で
ある。このオフセット印刷法では、印刷適性をあげるた
めに、版上のインキパターンを一度ゴムブランケットに
転写し、この後に被印刷体に再転写している。このオフ
セット印刷法は、比較的微細な画線を得ることができる
利点がある。しかしながらこのオフセット印刷法では、
インキング方式や2回の転写操作等の関係により印刷さ
れる画線が1μm程度の薄いもとなり、印刷画線にピン
ホールや断線が発生し易い欠点がある。またこの問題に
対処するために版に付着させるインキの膜厚を増すと、
その影響で印刷画線が太くなり100〜200μm程度
の線幅が限界となってしまう。本発明は上記の問題点に
鑑みてなされたもので、微細で且つ適度な厚みを有する
レジストパターンを正確且つ鮮明に、また効率的且つ安
価に形成しできるレジストパターンの形成方法を提供す
ることを目的とする。
The screen printing method is a method of performing printing by forming an ink shielding mask of a predetermined pattern on a mesh screen, allowing the ink to pass through the penetrating and transmitting portion and adhering it to the printing medium. is there. In this printing method, thick printing of ink (thickness of several μm to 20 μm) is easy, so that there is an advantage that a resist pattern having excellent corrosion resistance can be printed. However, it is difficult to print a fine pattern of 200 μm or less by this screen printing method. In addition, the offset printing method forms a lipophilic part and a hydrophilic part on a PS plate, holds water in the hydrophilic part to repel the oil-based ink, and selectively adheres the ink only to the lipophilic part. This is a method of printing an ink pattern on a printing medium. In this offset printing method, in order to improve printability, the ink pattern on the plate is once transferred to a rubber blanket and then retransferred to a printing medium. This offset printing method has an advantage that relatively fine lines can be obtained. However, with this offset printing method,
Due to the inking method, the transfer operation performed twice, and the like, the printed image line may be as thin as about 1 μm, and the printed image line may have pinholes or disconnections. In addition, if you increase the thickness of the ink applied to the plate to deal with this problem,
As a result, the printed image line becomes thick and the line width of about 100 to 200 μm becomes the limit. The present invention has been made in view of the above problems, and provides a resist pattern forming method capable of forming a resist pattern having a fine and appropriate thickness accurately and clearly, and efficiently and inexpensively. To aim.

【課題を解決するための手段】本発明では、印刷用凹版
の画線凹部に粘性インキを充填した後、画線凹部以外の
インキをドクターで除去し、ついで画線凹部内のインキ
を硬化させ、次に再び粘性インキを前記インキを硬化さ
せた画線凹部に充填した後、画線凹部以外のインキをド
クターで除去し、この後インキを被印刷体に転写して、
レジストパターンを形成することにより前記課題の解決
を図った。この形成方法で用いる凹版の版材には、通
常、銅、銅合金、ステンレス等の金属板が利用される
が、その他にもガラス、セラミック等各種の版材を利用
することができる。また印刷用版は、通常ゴムローラに
巻き付けられた版銅ローラーの状態で用いられるが、平
板状の状態で利用することもできる。印刷用版に所定パ
ターンの画線凹部を形成する手段は特に限定されるもの
でなく、研磨された版材に微細切削法で画線凹部を形成
するような機械的な手段や、フォトファブリケーション
技術を利用してエッチングして画線凹部を形成するとい
った化学的な手段など各種の手段を採用できる。このよ
うにして形成される画線凹部の線幅は通常3〜70μm
程度、深さ(版深)は1〜10μm程度である。また印
刷用凹版の画線凹部内のインキの硬化は、熱を加えた
り、紫外線(UV)、赤外線(IR)や電子線(EB)
等の放射によって行うことができる。本発明の形成方法
には、アクリル−エポキシ系紫外線硬化性インキ等の紫
外線硬化型インキ、赤外線(熱)硬化型インキ、電子線
硬化型インキなど各種のインキを利用できる。それらの
中でも、空気によって硬化が阻害される嫌気性タイプの
インキ、例えばアクリル重合タイプであるニツセッPE
−118(日本カーバイド工業(株)製)等が好適であ
る。この嫌気性タイプのインキを用いると凹版の画線凹
部に充填されたインキを硬化させたとき、空気に触れる
凹部開口側の部分は硬化し難く不完全硬化状態となり粘
着性が残存し、画線凹部内で硬化されたインキと後に再
び充填されるインキとが一体化し易い利点がある。しか
し本発明のレジストパターンの形成方法で利用できるイ
ンキは、このような嫌気性タイプのものに限定されるこ
とはない。以上のようにして画線凹部内のインキを硬化
させると、インキは体積収縮する。そして画線凹部の開
口側には凹みが生じる。そこでこの発明の形成方法で
は、この後再び画線凹部に粘性インキを充填し、その
後、画線凹部以外のインキをドクターで除去する。この
とき用いられるインキは、酸化重合タイプであるNS−
50(諸星インキ(株)製)等の粘着性を有するインキ
であっても良いが、一回目に用いたインキと同一のもの
であっても良い。なお、画線凹部内のインキの被印刷体
への転写が容易でない場合は、基板上に予め薄く粘着性
又は接着性の被膜を形成しておくと良い。このような被
膜を形成する材料としては、各種市販品があり、接着・
粘着過程が溶剤賦活型、熱賦活型、圧力賦活型、化学反
応型のもの等がある。この場合、塗布された粘着性又は
接着性の被膜の不要部分を除去する必要があるが、不要
部分の被膜の除去は、プラズマ等のドライエッチング、
エッチング液によるウエットエッチング等のエッチング
法によって行うことができる。また表面に凹凸のある薄
膜トランジスタ形成用基板、例えばプロセスを経た基板
に本発明の形成方法でレジストパターンを形成する場合
は、基板上に予めフォトレジストを塗布した後、インキ
の転写を行うと良い。基板に塗布されたフォトレジスト
は、転写されたインキをマスキングレジストとして紫外
線等で露光処理した後、エッチングすることにより不要
部分を除去される。この場合に用いるインキとしては、
フォトレジストが紫外線硬化型のものであれば、紫外線
を遮蔽できるカーボンブラック、紫外線吸収顔料等が混
合されたインキが好適である。
According to the present invention, after the image recesses of the intaglio plate for printing are filled with viscous ink, the ink other than the image recesses is removed by a doctor, and then the ink in the image recesses is cured. Then, again, the viscous ink is filled in the image-formed concave portion where the ink is hardened, the ink other than the image-shaped concave portion is removed by a doctor, and then the ink is transferred to a printing medium,
The above problem was solved by forming a resist pattern. As the intaglio plate material used in this forming method, a metal plate such as copper, copper alloy, and stainless is usually used, but various plate materials such as glass and ceramics can be used. The printing plate is usually used in the form of a copper plate roller wound around a rubber roller, but it can also be used in the form of a flat plate. The means for forming the image recesses of a predetermined pattern on the printing plate is not particularly limited, and a mechanical means for forming the image recesses by a fine cutting method on a polished plate material, or photofabrication Various means such as chemical means such as etching to form the image-forming concave portion can be adopted by utilizing the technique. The line width of the image-forming concave portion thus formed is usually 3 to 70 μm.
The degree and the depth (plate depth) are about 1 to 10 μm. In addition, the ink in the image recesses of the intaglio plate for printing is cured by applying heat, ultraviolet rays (UV), infrared rays (IR) or electron beams (EB).
Etc. can be performed by radiation. In the forming method of the present invention, various inks such as an ultraviolet-curable ink such as an acrylic-epoxy ultraviolet curable ink, an infrared (heat) curable ink and an electron beam curable ink can be used. Among them, anaerobic type inks whose curing is inhibited by air, for example, Nisset PE which is an acrylic polymerization type ink
-118 (manufactured by Nippon Carbide Industry Co., Ltd.) and the like are preferable. When this anaerobic type ink is used, when the ink filled in the concave portion of the intaglio image line is hardened, the part on the opening side of the concave part that comes into contact with air is hard to cure and becomes incompletely hardened, leaving adhesiveness There is an advantage that the ink hardened in the recess and the ink refilled later are easily integrated. However, the ink that can be used in the resist pattern forming method of the present invention is not limited to such an anaerobic type ink. When the ink in the image line concave portion is cured as described above, the ink contracts in volume. Then, a recess is formed on the opening side of the image recess. Therefore, in the forming method of the present invention, after that, the image area recesses are filled with the viscous ink again, and then the ink other than the image area recesses is removed by a doctor. The ink used at this time is NS- which is an oxidative polymerization type.
Ink having an adhesive property such as 50 (manufactured by Moroboshi Ink Co., Ltd.) may be used, or may be the same as the ink used for the first time. If it is not easy to transfer the ink in the image recesses to the printing medium, a thin adhesive or adhesive coating may be formed on the substrate in advance. As a material for forming such a coating, there are various commercially available products.
There are solvent activation type, heat activation type, pressure activation type, chemical reaction type and the like in the adhesion process. In this case, it is necessary to remove the unnecessary portion of the applied tacky or adhesive coating, but the unnecessary portion of the coating is removed by dry etching such as plasma,
It can be performed by an etching method such as wet etching with an etching solution. Further, when a resist pattern is formed on the substrate for forming a thin film transistor having an uneven surface, for example, a substrate that has been subjected to a process, by the forming method of the present invention, it is preferable to apply a photoresist on the substrate in advance and then transfer the ink. The photoresist applied to the substrate is subjected to an exposure treatment with ultraviolet rays or the like by using the transferred ink as a masking resist, and then an unnecessary portion is removed by etching. As the ink used in this case,
If the photoresist is an ultraviolet curable type, an ink in which carbon black capable of blocking ultraviolet rays, an ultraviolet absorbing pigment and the like are mixed is suitable.

【作用】本発明のレジストパターン形成方法では、版と
して凹版を使用し、この凹版の画線凹部に充填したイン
キを硬化させた後、再び画線凹部内にインキ充填し、こ
の後インキを薄膜トランジスタ形成用基板等の被印刷体
に転写するので、硬化処理により画線凹部内において増
粘または硬化して流動性が消滅し非流動状態となった一
回目のインキは、版上でパターニングされた形状をその
ままに保持して二回目のインキの粘着力によって被印刷
体に転写される。従ってこの形成方法によれば、微細パ
ターンを有するインキ層(レジストパターン)を版通り
に形成することができる。また本発明の形成方法によれ
ば、被印刷体である薄膜トランジスタ形成用基板に転写
されるインキは凹版の画線凹部内に収容されているの
で、転写する際にインキが押し潰されることはない。従
って本発明の形成方法によれば、版の画線凹部の深さに
応じた適宜な厚みのレジストパターンを形成できる。
In the method of forming a resist pattern according to the present invention, an intaglio plate is used as a plate, the ink filled in the image recess of the intaglio is cured, and then the ink is filled in the image recess again. Since it is transferred to a printing substrate such as a forming substrate, the first ink, which has become non-fluid due to disappearance of fluidity due to thickening or curing in the image concave portion by the curing treatment, is patterned on the plate. The shape is kept as it is and transferred to the printing medium by the adhesive force of the second ink. Therefore, according to this forming method, an ink layer (resist pattern) having a fine pattern can be formed as a plate. Further, according to the forming method of the present invention, the ink transferred to the substrate for forming a thin film transistor, which is the printing medium, is contained in the image recesses of the intaglio plate, so that the ink is not crushed during the transfer. . Therefore, according to the forming method of the present invention, it is possible to form a resist pattern having an appropriate thickness according to the depth of the image recessed portion of the plate.

【実施例】次に、図面を参照しつつ本発明のレジストパ
ターンの形成方法を説明する。 (実施例1)図1ないし図5は本発明のレジストパター
ンの形成方法の一実施例を工程順に示すもので、図中符
号1は印刷用版である。この印刷用版1は銅板製の凹版
で、ゴムローラ20に巻き付けられている。この印刷用
版1にはTFTの半導体膜を形成するためのレジストパ
ターンに対応した画線凹部2がパターン形成されてい
る。この画線凹部2はエッチング処理によって形成され
たものでその最小線幅は20μm、深さ(版深)は3μ
mであった。この印刷用版1の表面に図2に示すよう
に、アクリル−エポキシ系紫外線硬化性インキ3を塗布
し、ついで不要なインキを薄い金属ブレード等からなる
ドクター4で掻き取って除去し、画線凹部2のみにイン
キ3を残留充填させた。この後、印刷用版1の表面に紫
外線を所定時間照射してインキ3を硬化せしめたとこ
ろ、図3に示すように、インキ3は硬化収縮し、画線凹
部2の開口部側に浅い凹み5が生じた。次に、図4に示
すように、印刷用版1の表面に再びインキ6を塗布しつ
いで不要なインキをドクター4で掻き取って、画線凹部
2のみにインキ6を残留充填させた。このとき用いたイ
ンキ6は1回目に用いたインキ3と同一のものを用い
た。次に図5に示すように、p−Si膜6が形成された
TFT基板(被印刷体)7の上に印刷用版1を設置し正
確に位置を合わせた後両者を密着させゆっくりと転が
し、インキ6(未硬化)とインキ3(硬化)とを転移さ
せた。印刷用版1が基板7から離れると画線凹部2内で
(未硬化)インキ6と(硬化)インキ3がTFT基板7
に転写されて最小線幅20μm、膜厚3μmのレジスト
パターンが精度良く再現されていた。このレジストパタ
ーン形成方法では、版1として凹版を使用し、この凹版
1の画線凹部2に充填したインキ3を硬化させた後再び
画線凹部2にインキ6を充填し、ついでこれらをTFT
基板7に転写したので、インキ3は画線凹部2内におい
て増粘または硬化して画線凹部2の形状をそのままに保
持して(未硬化)インキ6の粘着力によりTFT基板7
に転写される。しかも、一回目のインキ3が硬化処理時
に体積収縮しても、その部分が二回目のインキ6によっ
て補われるので、インキ3,6が基板7にしっかりと密
着し、円滑に転写される。従ってこの形成方法によれ
ば、インキ3,6からなる微細なレジストパターンを版
通りに形成することができる。またこのレジストパター
ンの形成方法によれば、TFT基板7に転写されるイン
キ3は凹版1の画線凹部2内に収容されているので、転
写する際にインキ3が押し潰されることはない。従って
この形成方法によれば、版1の画線凹部2の深さに応じ
た適宜な厚みのレジストパターンを形成できる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a method for forming a resist pattern according to the present invention will be described with reference to the drawings. (Embodiment 1) FIGS. 1 to 5 show an embodiment of a method of forming a resist pattern according to the present invention in the order of steps, in which reference numeral 1 is a printing plate. This printing plate 1 is an intaglio plate made of a copper plate and is wound around a rubber roller 20. The printing plate 1 is patterned with an image recess 2 corresponding to a resist pattern for forming a semiconductor film of a TFT. The image line concave portion 2 is formed by an etching process and has a minimum line width of 20 μm and a depth (plate depth) of 3 μm.
It was m. As shown in FIG. 2, an acrylic-epoxy UV-curable ink 3 is applied to the surface of the printing plate 1, and then unnecessary ink is scraped off with a doctor 4 composed of a thin metal blade or the like. Only the recess 2 was filled with the ink 3. After that, when the ink 3 was cured by irradiating the surface of the printing plate 1 with ultraviolet rays for a predetermined time, the ink 3 was cured and shrunk as shown in FIG. 5 occurred. Next, as shown in FIG. 4, the ink 6 was applied to the surface of the printing plate 1 again, and unnecessary ink was scraped off by the doctor 4 so that only the image line recess 2 was filled with the ink 6. The ink 6 used at this time was the same as the ink 3 used for the first time. Next, as shown in FIG. 5, the printing plate 1 is placed on the TFT substrate (printing material) 7 on which the p-Si film 6 is formed, the positions are accurately aligned, and the two are brought into close contact with each other and slowly rolled. , Ink 6 (uncured) and ink 3 (cured) were transferred. When the printing plate 1 is separated from the substrate 7, the (unhardened) ink 6 and the (hardened) ink 3 in the image recess 2 become the TFT substrate 7.
Then, the resist pattern having a minimum line width of 20 μm and a film thickness of 3 μm was accurately reproduced. In this resist pattern forming method, an intaglio plate is used as the plate 1, the ink 3 filled in the image line concave portion 2 of the intaglio plate 1 is cured, and then the image line concave portion 2 is filled with the ink 6 again.
Since the ink 3 has been transferred to the substrate 7, the ink 3 thickens or cures in the image recess 2 and maintains the shape of the image recess 2 as it is (uncured).
Is transcribed to. Moreover, even if the volume of the first ink 3 shrinks during the curing process, that portion is compensated by the second ink 6, so that the inks 3 and 6 firmly adhere to the substrate 7 and are transferred smoothly. Therefore, according to this forming method, it is possible to form a fine resist pattern composed of the inks 3 and 6 according to the plate. Further, according to this resist pattern forming method, since the ink 3 transferred to the TFT substrate 7 is contained in the image-forming concave portion 2 of the intaglio plate 1, the ink 3 is not crushed during the transfer. Therefore, according to this forming method, it is possible to form a resist pattern having an appropriate thickness according to the depth of the image-forming concave portion 2 of the plate 1.

【発明の効果】以上説明したように、本発明の微細レジ
ストパターンの形成方法は、印刷用凹版の画線凹部に粘
性インキを充填した後、画線凹部以外の非画線部のイン
キをドクターで除去し、ついで画線凹部内のインキを硬
化させ、次に再び粘性インキを前記インキを硬化させた
画線凹部に充填した後、画線凹部以外のインキをドクタ
ーで除去し、この後インキを被印刷体に転写してレジス
トパターンとすることを特徴とする方法なので、一度目
のインキを硬化処理することによりインキは画線凹部内
において増粘または硬化し、インキの流動性は消滅す
る。そして、一回目のインキは非流動状態となって版上
でパターニングされた形状をそのままに保持して二回目
のインキの粘着力により被印刷体に転写される。この
際、一回目のインキが硬化処理時に体積収縮しても、そ
の部分が二回目のインキによって補われるので、インキ
が基板にしっかりと密着し、円滑に転写される。従って
本発明の形成方法によれば、インキからなる微細なレジ
ストパターンを版通りに形成することができる。また本
発明の形成方法によれば、TFT基板に転写されるイン
キが凹板の画線凹部内に収容されているので、転写の際
にインキが押し潰されることはない。従って本発明の形
成方法によれば、版の画線凹部の深さに応じた厚みのレ
ジストパターンを形成できる。よって本発明のレジスト
パターンの形成方法によれば、微細で且つ適度な厚みを
有するレジストパターンを正確且つ鮮明に、また効率的
且つ安価に形成することができる。
As described above, according to the method of forming a fine resist pattern of the present invention, after the viscous ink is filled in the image concave portions of the intaglio plate for printing, the ink in the non-image area other than the image concave portions is doctored. Then, the ink in the image recess is cured, and then the viscous ink is filled again in the image recess in which the ink is cured, and the ink other than the image recess is removed with a doctor. Since the method is characterized in that the ink is transferred to the printing material to form a resist pattern, by hardening the first ink, the ink thickens or hardens in the image recesses, and the fluidity of the ink disappears. . Then, the first-time ink becomes in a non-fluid state and the pattern shape on the plate is kept as it is, and is transferred to the printing medium by the adhesive force of the second-time ink. At this time, even if the volume of the first ink shrinks during the curing process, that portion is compensated by the second ink, so that the ink firmly adheres to the substrate and is transferred smoothly. Therefore, according to the forming method of the present invention, a fine resist pattern made of ink can be formed according to the plate. Further, according to the forming method of the present invention, since the ink transferred to the TFT substrate is contained in the image line concave portion of the concave plate, the ink is not crushed during the transfer. Therefore, according to the forming method of the present invention, it is possible to form a resist pattern having a thickness corresponding to the depth of the image recesses of the plate. Therefore, according to the method for forming a resist pattern of the present invention, a resist pattern having a fine and appropriate thickness can be formed accurately and clearly, efficiently and inexpensively.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例のレジストパターンの形成方法に用いる
版を示す断面図。
FIG. 1 is a cross-sectional view showing a plate used in a method for forming a resist pattern according to an embodiment.

【図2】同実施例の形成方法で一回目のインキを充填す
る工程を示す断面図。
FIG. 2 is a cross-sectional view showing a step of filling ink for the first time by the forming method of the embodiment.

【図3】同実施例の形成方法で一回目に充填されたイン
キを硬化させる工程を示す断面図。
FIG. 3 is a cross-sectional view showing a step of curing the ink filled in the first time by the forming method of the embodiment.

【図4】同実施例の形成方法で二回目のインキを充填す
る工程を示す断面図。
FIG. 4 is a cross-sectional view showing a step of filling ink for a second time by the forming method of the embodiment.

【図5】同実施例の形成方法で被印刷体にインキを転写
する工程を示す断面図。
FIG. 5 is a cross-sectional view showing a step of transferring ink to a printing medium by the forming method of the embodiment.

【符号の説明】[Explanation of symbols]

1 凹版 2 画線凹部 3 インキ 4 ドクター 5 凹み 6 インキ 7 TFT基板 1 Intaglio 2 Image line recess 3 Ink 4 Doctor 5 Indentation 6 Ink 7 TFT substrate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 一範 東京都中央区東日本橋1−6−5 株式会 社ジーティシー内 (56)参考文献 特開 昭60−39888(JP,A) 特開 平3−19889(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazunori Nakamura 1-6-5 Higashi Nihonbashi, Chuo-ku, Tokyo Inside GTC (56) References JP-A-60-39888 (JP, A) JP-A 3-19889 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 印刷用凹版の画線凹部に粘性インキを充
填した後、画線凹部以外のインキをドクターで除去し、
ついで画線凹部のインキを硬化させ、次に再び粘性イン
キを前記インキを硬化させた画線凹部に充填した後、画
線凹部以外のインキをドクターで除去し、この後インキ
を被印刷体に転写してレジストパターンとすることを特
徴とする微細レジストパターンの形成方法。
1. A printing intaglio image drawing concave portion is filled with viscous ink, and then ink other than the drawing concave portion is removed by a doctor,
Then, the ink in the image recesses is cured, and then the viscous ink is filled again in the image recesses in which the ink has been cured, and then the ink other than the image recesses is removed with a doctor, after which the ink is applied to the printing medium A method for forming a fine resist pattern, which comprises transferring to form a resist pattern.
JP3245191A 1991-02-01 1991-02-01 Method for forming fine resist pattern Expired - Fee Related JPH07102732B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3245191A JPH07102732B2 (en) 1991-02-01 1991-02-01 Method for forming fine resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3245191A JPH07102732B2 (en) 1991-02-01 1991-02-01 Method for forming fine resist pattern

Publications (2)

Publication Number Publication Date
JPH04249189A JPH04249189A (en) 1992-09-04
JPH07102732B2 true JPH07102732B2 (en) 1995-11-08

Family

ID=12359337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3245191A Expired - Fee Related JPH07102732B2 (en) 1991-02-01 1991-02-01 Method for forming fine resist pattern

Country Status (1)

Country Link
JP (1) JPH07102732B2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5609704A (en) 1993-09-21 1997-03-11 Matsushita Electric Industrial Co., Ltd. Method for fabricating an electronic part by intaglio printing
US6732643B2 (en) 2001-11-07 2004-05-11 Lg. Philips Lcd Co., Ltd. Method for forming pattern using printing process
KR100518270B1 (en) 2002-12-18 2005-10-04 엘지.필립스 엘시디 주식회사 Method of forming pattern using printing process
KR100585871B1 (en) 2002-12-18 2006-06-02 엘지.필립스 엘시디 주식회사 A method of forming pattern using printing process
KR100909414B1 (en) 2002-12-18 2009-07-24 엘지디스플레이 주식회사 Manufacturing method of liquid crystal display element
KR100914200B1 (en) 2002-12-27 2009-08-27 엘지디스플레이 주식회사 Fabricating method of liquid crystal display device
KR100606446B1 (en) 2002-12-27 2006-07-31 엘지.필립스 엘시디 주식회사 Fabrication method of liquid crystal display device
KR100909419B1 (en) 2002-12-27 2009-07-28 엘지디스플레이 주식회사 Method for manufacturing color filter of liquid crystal display device
KR100945356B1 (en) 2002-12-27 2010-03-09 엘지디스플레이 주식회사 Fabrication method of color filter of liquid crystal display device
JP2006108545A (en) * 2004-10-08 2006-04-20 Asahi Kasei Electronics Co Ltd Resist pattern formation apparatus
JP2006202878A (en) * 2005-01-19 2006-08-03 Asahi Kasei Electronics Co Ltd Apparatus of forming resist pattern
MA42906A (en) * 2015-07-10 2018-05-16 De La Rue Int Ltd METHOD OF MANUFACTURING A PATTERN IN OR ON A SUPPORT
GB201512120D0 (en) * 2015-07-10 2015-08-19 Rue De Int Ltd A method for producing a pattern in or on a support
GB2542834B (en) * 2015-10-01 2017-10-04 De La Rue Int Ltd Method and apparatus for producing a printed product

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