JPH0697486A - Photocoupling circuit element - Google Patents
Photocoupling circuit elementInfo
- Publication number
- JPH0697486A JPH0697486A JP27083692A JP27083692A JPH0697486A JP H0697486 A JPH0697486 A JP H0697486A JP 27083692 A JP27083692 A JP 27083692A JP 27083692 A JP27083692 A JP 27083692A JP H0697486 A JPH0697486 A JP H0697486A
- Authority
- JP
- Japan
- Prior art keywords
- circuit element
- optical
- substrate
- optical transmission
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光結合回路素子に関
し、より詳しくは、コンピュータにおけるマルチプロセ
ッサアーキテクチャの要請に対処可能な光通信を行う光
結合回路素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling circuit element, and more particularly, to an optical coupling circuit element for optical communication capable of coping with the requirements of a multiprocessor architecture in a computer.
【０００２】[0002]
【従来の技術】従来、コンピュータにおけるマルチプロ
セッサアーキテクチャの要請に対処すべく、メモリ等の
回路素子間のデータ通信を光信号を用いて行う３次元光
結合回路素子が提案されている（「エレクトロニク
ス」、１９９１年１０月号、「３次元共有メモリで並列
処理システムを実現」）。2. Description of the Related Art Conventionally, in order to meet the demand of a multiprocessor architecture in a computer, a three-dimensional optical coupling circuit element has been proposed which performs data communication between circuit elements such as a memory using an optical signal ("electronics"). , October 1991, "Realization of parallel processing system with three-dimensional shared memory").
【０００３】この３次元光結合回路素子は、１つのウェ
ーハーにＧａＡｓ等を用いた化合物半導体からなる発光
素子を組み込むとともに、他のウェーハーに受光素子を
組み込んで、発光素子、受光素子を対向させた構造から
なるものである。In this three-dimensional optical coupling circuit element, a light emitting element made of a compound semiconductor using GaAs or the like is incorporated in one wafer, and a light receiving element is incorporated in another wafer so that the light emitting element and the light receiving element face each other. It consists of a structure.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上述し
たような従来の光結合回路素子の場合、少なくとも、Ｇ
ａＡｓ等の高価な化合物半導体からなる発光素子を形成
しなければならず、シリコン系の材料を用いる場合に比
べ、コストが高くなり、また化合物半導体の特性から信
頼性の点で不十分であるという問題があった。However, in the case of the conventional optical coupling circuit element as described above, at least G
It is necessary to form a light-emitting element made of an expensive compound semiconductor such as aAs, resulting in higher cost than when using a silicon-based material, and the characteristics of the compound semiconductor are insufficient in terms of reliability. There was a problem.
【０００５】本発明は上記事情に基づいてなされたもの
であり、低価格で信頼性も高くマルチプロセッサアーキ
テクチャの要請に対処可能な光結合回路素子を提供する
ことを目的とするものである。The present invention has been made in view of the above circumstances, and an object thereof is to provide an optical coupling circuit element which is low in cost, high in reliability, and capable of coping with the demand of a multiprocessor architecture.
【０００６】[0006]
【課題を解決するための手段】本発明の光結合回路素子
は、多孔質シリコンを用いたｐｎ接合構造で光信号を送
信する光送信素子を組み込んだ単結晶シリコン基板と、
前記光送信部からの光信号を受信する受光素子を組み込
んだ基板とを、前記光送信素子と前記受光素子とが対向
配置となる状態で接合したことを特徴とするものであ
る。The optical coupling circuit element of the present invention comprises a single crystal silicon substrate incorporating an optical transmission element for transmitting an optical signal with a pn junction structure using porous silicon.
It is characterized in that a substrate in which a light receiving element for receiving an optical signal from the light transmitting section is incorporated is joined in a state where the light transmitting element and the light receiving element face each other.
【０００７】[0007]
【作用】上述した構成の光結合回路素子の作用について
以下に説明する。単結晶シリコン基板は、化合物半導体
を用いた基板に比べ、そのコストが安く、物理的な信頼
性も高いので、多孔質シリコンを用いたｐｎ接合構造の
光送信素子を容易に組み込むことができ、したがって、
本発明の光結合回路素子は、低コストで信頼性も良好と
なる。また、光送信素子として多孔質シリコンを用いて
いるので、優れた光信号の送信機能を発揮させることが
できる。さらに、単結晶シリコン基板にメモリやＣＰＵ
等を組み込み又は接続し、他の基板にもメモリやＣＰＵ
等を組み込むことで、マルチプロセッサアーキテクチャ
の要請にも対応し得るようになる。The operation of the optical coupling circuit element having the above-mentioned structure will be described below. Since a single crystal silicon substrate is lower in cost and higher in physical reliability than a substrate using a compound semiconductor, an optical transmission element having a pn junction structure using porous silicon can be easily incorporated, Therefore,
The optical coupling circuit element of the present invention has low cost and good reliability. Further, since porous silicon is used as the optical transmission element, it is possible to exert an excellent optical signal transmission function. In addition, memory and CPU on a single crystal silicon substrate
Etc. built-in or connected, memory and CPU on other boards
By incorporating the above, it becomes possible to meet the demand for multiprocessor architecture.
【０００８】[0008]
【実施例】以下に、本発明の一実施例である光結合回路
素子について図面を参照して詳細に説明する。図１に示
す光結合回路素子１は、多孔質シリコン３を用いたｐｎ
接合構造で光信号を送信する光送信素子２を組み込んだ
単結晶シリコン基板４と、光送信素子２からの光信号を
受信する受光素子６を組み込んだ基板５とを、光送信素
子２、受光素子６が対向配置となる状態で接合したもの
である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An optical coupling circuit element according to an embodiment of the present invention will be described in detail below with reference to the drawings. The optical coupling circuit element 1 shown in FIG. 1 is a pn using porous silicon 3.
The single crystal silicon substrate 4 in which the optical transmission element 2 for transmitting an optical signal having a junction structure is incorporated, and the substrate 5 in which the light receiving element 6 for receiving the optical signal from the optical transmission element 2 is incorporated, The elements 6 are joined in a state of being opposed to each other.
【０００９】光送信素子２は、ｐ型の単結晶シリコン基
板４の一面（上面）に形成した多孔質シリコン３と、こ
の多孔質シリコン３上に形成したｎ−μＣ−ＳｉＣ（ｎ
型の微結晶を含有する非晶質シリコンカーボン）７とか
らなり、このｎ−μＣ−ＳｉＣ７上に下部ＩＴＯ（イン
ジウムティンオキサイド）８を成膜するとともに、この
下部ＩＴＯ８及び単結晶シリコン基板４の一面の露出部
分に亘って透明な絶縁膜としてのＳｉＯ2 膜９を成膜し
ている。The optical transmission element 2 has a porous silicon 3 formed on one surface (upper surface) of a p-type single crystal silicon substrate 4 and an n-μC-SiC (n) formed on the porous silicon 3.
Of the lower type ITO (indium tin oxide) 8 is formed on the n-μC-SiC 7, and the lower ITO 8 and the single crystal silicon substrate 4 are formed. A SiO 2 film 9 as a transparent insulating film is formed over the exposed portion of one surface.
【００１０】受光素子６は、他方の単結晶シリコンから
なる基板５の下面に形成したｎ−μＣ−ＳｉＣ１０から
なり、このｎ−μＣ−ＳｉＣ１０及び基板５の下面の一
部に上部ＩＴＯ１１を成膜するとともに、この上部ＩＴ
Ｏ１１及び基板５の下面の露出部分に亘って透明な絶縁
膜としてのＳｉＯ2 膜１２を成膜している。The light receiving element 6 is composed of n-μC-SiC10 formed on the lower surface of the other substrate 5 made of single crystal silicon, and the upper ITO 11 is formed on this n-μC-SiC10 and a part of the lower surface of the substrate 5. With this, the upper IT
A SiO 2 film 12 as a transparent insulating film is formed over the exposed portion of the lower surface of the substrate 5 and O11.
【００１１】光送信素子２、受光素子６は、図１に示す
ように、ＳｉＯ2 膜９，１２を介して対向配置に接合さ
れ、かつ、ＳｉＯ2 膜９，１２は透明な接着剤１３によ
り一体的に接合されている。尚、図１中、１４は単結晶
シリコン基板４の他面に設けたＡｌ層、１５は基板５の
他面に設けたＡｌ層である。As shown in FIG. 1, the light transmitting element 2 and the light receiving element 6 are bonded to face each other via the SiO 2 films 9 and 12, and the SiO 2 films 9 and 12 are bonded by a transparent adhesive 13. It is joined together. In FIG. 1, 14 is an Al layer provided on the other surface of the single crystal silicon substrate 4, and 15 is an Al layer provided on the other surface of the substrate 5.
【００１２】次に、光結合回路素子１の製造工程につい
て、図２乃至図４を参照して説明する。まず、図２に示
すように、Ａｌ層１４を蒸着してオーミック接触させた
ｐ型の単結晶シリコン基板４を用意し、この単結晶シリ
コン基板４の上面に多孔質シリコン３を形成する。Next, the manufacturing process of the optical coupling circuit element 1 will be described with reference to FIGS. First, as shown in FIG. 2, a p-type single crystal silicon substrate 4 in which an Al layer 14 is vapor-deposited and in ohmic contact is prepared, and porous silicon 3 is formed on the upper surface of the single crystal silicon substrate 4.
【００１３】この多孔質シリコン３は、例えば、ｐ型の
単結晶シリコン基板２として、面方位（１１１）及び
（１００）又は抵抗率０．１乃至４０Ωｃｍのｐ型単結
晶シリコンを用い、エチルアルコール：弗酸（４８％水
溶液）＝０．１：１乃至５：１の水溶液中で電流密度５
乃至５０ｍＡ／ｃｍ2 、陽極化成時間１乃至５分により
作成できる。さらに、光化学エッチングまたはＫＯＨ溶
液に数秒間浸し多孔質シリコン３の表面の不純物を除去
する。The porous silicon 3 is made of, for example, a p-type single crystal silicon substrate 2 made of p-type single crystal silicon having plane orientations (111) and (100) or a resistivity of 0.1 to 40 Ωcm, and ethyl alcohol. : Hydrofluoric acid (48% aqueous solution) = current density 5 in an aqueous solution of 0.1: 1 to 5: 1
To 50 mA / cm 2 and anodization time of 1 to 5 minutes. Further, photochemical etching or immersion in a KOH solution for several seconds is performed to remove impurities on the surface of the porous silicon 3.
【００１４】次に、多孔質シリコン３上に、図２に示す
ようにｎ−μＣ−ＳｉＣ７を成膜し、パターニングを行
った後、さらに、このｎ−μＣ−ＳｉＣ７上に下部ＩＴ
Ｏ８を成膜するとともにそのパターニングを行う。そし
て、この下部ＩＴＯ８及び単結晶シリコン基板４の一面
の露出部分に亘って透明な絶縁膜としてのＳｉＯ2 膜９
をプラズマＣＶＤ又はスパッタリングにより成膜し、そ
のパターニングを行うことで、光送信素子２側の製造が
完了する。Next, as shown in FIG. 2, an n-μC-SiC7 film is formed on the porous silicon 3 and patterned, and then a lower IT is formed on the n-μC-SiC7.
O8 is deposited and patterned. Then, the lower ITO 8 and the SiO 2 film 9 as a transparent insulating film over the exposed portion of the one surface of the single crystal silicon substrate 4.
Is formed by plasma CVD or sputtering, and the patterning is performed, whereby the manufacturing on the optical transmission element 2 side is completed.
【００１５】一方、受光素子６側については、以下の製
造工程を行う。まず、図３に示すようにＡｌ層１５を設
けた単結晶シリコンからなる基板５の下面に、ｎ−μＣ
−ＳｉＣ１０を成膜し、そのパターニングを行った後、
このｎ−μＣ−ＳｉＣ１０及び基板５の下面の一部に上
部ＩＴＯ１１を成膜し、そのパターニングを行う。さら
に、上部ＩＴＯ１１及び基板５の下面の露出部分に亘っ
て透明な絶縁膜としてのＳｉＯ2 膜１２をプラズマＣＶ
Ｄ又はスパッタリングにより成膜してそのパターニング
を行うことで、受光素子６側の製造が完了する。On the other hand, the following manufacturing process is performed on the light receiving element 6 side. First, as shown in FIG. 3, n-μC was formed on the lower surface of the substrate 5 made of single crystal silicon provided with the Al layer 15.
-SiC10 is formed into a film, and after patterning the same,
The upper ITO 11 is deposited on the n-μC-SiC 10 and a part of the lower surface of the substrate 5 and is patterned. Further, a SiO 2 film 12 as a transparent insulating film is formed on the upper ITO 11 and the exposed portion of the lower surface of the substrate 5 by plasma CV.
By forming a film by D or sputtering and patterning the film, the manufacturing on the light receiving element 6 side is completed.
【００１６】このようにして、光送信素子２側、受光素
子６側の各要素を形成した後、図４に示すように、光送
信素子２側のＳｉＯ2 膜９、受光素子６側のＳｉＯ2 膜
１２を重ね合せ、これらの端部領域に透明な接着剤１３
を充填することで、図１に示す光結合回路素子１を得
る。After the respective elements on the light transmitting element 2 side and the light receiving element 6 side are formed in this way, as shown in FIG. 4, the SiO 2 film 9 on the light transmitting element 2 side and the SiO 2 film on the light receiving element 6 side are formed. 2 Membranes 12 are overlapped, and transparent adhesive 13 is applied to these end regions.
By filling in, the optical coupling circuit element 1 shown in FIG. 1 is obtained.
【００１７】図５は、光結合回路素子１の発光試験を行
う構成を示すものであり、光送信素子２側のＡｌ層１４
にパルス発信器２１を接続するとともに、受光素子６側
のＡｌ層１５を接地し、さらに、受光素子６側の上部Ｉ
ＴＯ１１に電流計２２及び直流電源Ｅを接続したもので
ある。このような回路構成で、パルス発信器２１により
図６に示すように−１０Ｖの振幅を有するパルス電圧を
光送信素子２に加えると、光送信素子２から受光素子６
に向けて光が送信され、受光素子６に接続した電流計２
２に図６に示す波形の電流が流れることを確認できた。FIG. 5 shows a structure for performing a light emission test of the optical coupling circuit element 1, in which the Al layer 14 on the optical transmission element 2 side is shown.
Is connected to the pulse transmitter 21, the Al layer 15 on the side of the light receiving element 6 is grounded, and the upper part I on the side of the light receiving element 6 is connected.
An ammeter 22 and a DC power source E are connected to the TO11. With such a circuit configuration, when a pulse voltage having an amplitude of −10 V is applied to the optical transmission element 2 by the pulse transmitter 21 as shown in FIG.
Ammeter 2 connected to the light-receiving element 6 when light is transmitted toward
It was confirmed that the current having the waveform shown in FIG.
【００１８】上述した構成の光結合回路素子１によれ
ば、単結晶シリコン基板４は、化合物半導体を用いた基
板に比べ、そのコストが安く、物理的な信頼性も高いの
で、多孔質シリコン３を用いたｐｎ接合構造の光送信素
子２を容易に組み込むことができ、したがって、光結合
回路素子１は、低コストで信頼性も良好となる。According to the optical coupling circuit element 1 having the above-mentioned structure, the single crystal silicon substrate 4 is lower in cost and higher in physical reliability than the substrate using the compound semiconductor. The optical transmission element 2 having a pn junction structure using the can be easily incorporated, and therefore the optical coupling circuit element 1 is low in cost and excellent in reliability.
【００１９】また、光送信素子２として多孔質シリコン
３を用いているので、簡便で優れた光信号の送信機能を
発揮させることができる。Further, since the porous silicon 3 is used as the optical transmitting element 2, it is possible to exert a simple and excellent optical signal transmitting function.
【００２０】図７は、上述した光結合回路素子１の応用
例を概念的に示すものであり、単結晶シリコンからなる
基板２１，２２，２３に、各々既述した構成の光送信素
子２、受光素子６を対向配置に組み込むとともに、各基
板２１，２２，２３にメモリ又はＣＰＵ等の論理素子２
４，２５，２６を組み込んで、各基板２１，２２，２３
を並列に配置し、各光送信素子２から各受光素子６へ光
信号を送るようにすれば、各論理素子２４，２５，２６
の動作と並行して各光送信素子２から各受光素子６への
信号伝送を行うことができ、マルチプロセッサアーキテ
クチャの要請にも対応し得るようになる。FIG. 7 conceptually shows an application example of the above-described optical coupling circuit element 1, in which the optical transmission elements 2 having the above-described configurations are provided on the substrates 21, 22 and 23 made of single crystal silicon. The light-receiving element 6 is installed in a facing arrangement, and the logic elements 2 such as a memory or a CPU are provided on the respective substrates 21, 22, 23.
Incorporating 4, 25, 26, each substrate 21, 22, 23
Are arranged in parallel and an optical signal is sent from each optical transmitting element 2 to each light receiving element 6, each logical element 24, 25, 26
Signals can be transmitted from each optical transmitting element 2 to each light receiving element 6 in parallel with the above operation, and the demand for the multiprocessor architecture can be met.
【００２１】本発明は、上述した実施例に限定されるも
のではなく、その要旨の範囲内で種々の変形が可能であ
る。The present invention is not limited to the above-mentioned embodiments, but various modifications can be made within the scope of the invention.
【００２２】[0022]
【発明の効果】以上詳述した本発明によれば、上述した
構成としたので、低コストで信頼性も高く優れた光送信
機能を発揮するとともに、マルチプロセッサアーキテク
チャの要請にも対応し得る光結合回路素子を提供するこ
とができる。According to the present invention described in detail above, since it has the above-mentioned configuration, it is possible to realize an optical transmission function that is low in cost, highly reliable, and capable of meeting the requirements of a multiprocessor architecture. A coupling circuit element can be provided.
【図１】本発明の実施例装置の断面図である。FIG. 1 is a sectional view of an apparatus according to an embodiment of the present invention.
【図２】本発明の実施例装置の製造工程図である。FIG. 2 is a manufacturing process diagram of an apparatus according to an embodiment of the present invention.
【図３】本発明の実施例装置の製造工程図である。FIG. 3 is a manufacturing process diagram of an apparatus according to an embodiment of the present invention.
【図４】本発明の実施例装置の製造工程図である。FIG. 4 is a manufacturing process diagram of the device according to the embodiment of the present invention.
【図５】本発明の実施例装置の発光試験を行う回路構成
図である。FIG. 5 is a circuit configuration diagram for performing a light emission test of the device of the embodiment of the present invention.
【図６】図５に示す発光試験におけるパルス信号及び検
出電流の波形図である。6 is a waveform diagram of a pulse signal and a detection current in the light emission test shown in FIG.
【図７】本発明の応用例を示す概念的な説明図である。FIG. 7 is a conceptual explanatory diagram showing an application example of the present invention.
１ 光結合回路素子 ２ 光送信素子 ３ 多孔質シリコン ４ 単結晶シリコン基板 ６ 受光素子 1 Optical coupling circuit element 2 Optical transmission element 3 Porous silicon 4 Single crystal silicon substrate 6 Light receiving element
Claims (1)
光信号を送信する光送信素子を組み込んだ単結晶シリコ
ン基板と、前記光送信部からの光信号を受信する受光素
子を組み込んだ基板とを、前記光送信素子と前記受光素
子とが対向配置となる状態で接合したことを特徴とする
光結合回路素子。1. A single crystal silicon substrate incorporating an optical transmitting element for transmitting an optical signal with a pn junction structure using porous silicon, and a substrate incorporating a light receiving element for receiving an optical signal from the optical transmitting section. An optical coupling circuit element, characterized in that the optical transmission element and the light receiving element are bonded to each other in a state of being opposed to each other.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27083692A JPH0697486A (en) | 1992-09-14 | 1992-09-14 | Photocoupling circuit element |
| US08/008,566 US5285078A (en) | 1992-01-24 | 1993-01-22 | Light emitting element with employment of porous silicon and optical device utilizing light emitting element |
| DE4301940A DE4301940A1 (en) | 1992-01-24 | 1993-01-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27083692A JPH0697486A (en) | 1992-09-14 | 1992-09-14 | Photocoupling circuit element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0697486A true JPH0697486A (en) | 1994-04-08 |
Family
ID=17491691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27083692A Withdrawn JPH0697486A (en) | 1992-01-24 | 1992-09-14 | Photocoupling circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0697486A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999030250A1 (en) * | 1997-12-10 | 1999-06-17 | Seiko Epson Corporation | Information processing system, enciphering/deciphering system, system lsi, and electronic apparatus |
-
1992
- 1992-09-14 JP JP27083692A patent/JPH0697486A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999030250A1 (en) * | 1997-12-10 | 1999-06-17 | Seiko Epson Corporation | Information processing system, enciphering/deciphering system, system lsi, and electronic apparatus |
| US6557020B1 (en) | 1997-12-10 | 2003-04-29 | Seiko Epson Corporation | Information processing system, enciphering/deciphering system, system LSI, and electronic apparatus |
| US7117237B2 (en) | 1997-12-10 | 2006-10-03 | Seiko Epson Corporation | Information processing system, encryption/decryption system, system LSI, and electronic equipment |
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Legal Events
| Date | Code | Title | Description |
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| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19991130 |