JPH0695560B2 - Lead frame for semiconductor device and manufacturing method thereof - Google Patents

Lead frame for semiconductor device and manufacturing method thereof

Info

Publication number
JPH0695560B2
JPH0695560B2 JP1830789A JP1830789A JPH0695560B2 JP H0695560 B2 JPH0695560 B2 JP H0695560B2 JP 1830789 A JP1830789 A JP 1830789A JP 1830789 A JP1830789 A JP 1830789A JP H0695560 B2 JPH0695560 B2 JP H0695560B2
Authority
JP
Japan
Prior art keywords
lead frame
protrusion
diameter
semiconductor device
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1830789A
Other languages
Japanese (ja)
Other versions
JPH02198162A (en
Inventor
悟 小林
敏克 経広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1830789A priority Critical patent/JPH0695560B2/en
Publication of JPH02198162A publication Critical patent/JPH02198162A/en
Publication of JPH0695560B2 publication Critical patent/JPH0695560B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、半導体装置用リードフレームに関するもので
あり、特に半導体装置の組立作業を容易にするために使
用されるもので、半導体装置組立時にリードフレームの
二枚重さなりを防止するものである。
DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Industrial field of application) The present invention relates to a lead frame for a semiconductor device, and is particularly used for facilitating the assembly work of the semiconductor device. The purpose of the present invention is to prevent the two lead frames from overlapping when assembling the semiconductor device.

(従来の技術) 従来技術により成形した半導体装置用リードフレームの
凸起部の断面形状を、第3図にリードフレーム1を3枚
積重ねした状態で図示する。
(Prior Art) A cross-sectional shape of a raised portion of a semiconductor device lead frame formed by the prior art is shown in FIG. 3 in a state where three lead frames 1 are stacked.

即ち各リードフレームは、組み立て作業時に複数枚積み
重ねられ、その後1枚1枚つかみ上げるために、隣接リ
ードフレーム間に隙間を要するが、この隙間を形成する
ためには、リードフレーム面に凸起2が必要となる。通
常この凸起は、リードフレームの板厚Tに対し所要の高
さHを得るために、打ち出し(半抜き)加工で形成され
る。即ち図示しないプレス金型の直径D1のパンチで、材
厚Tのリードフレーム素材に打ち出し(半抜き)加工を
施し、高さHの凸起2を形成する。このとき凸起形成用
パンチ径D1とダイ径D2はほぼ同一径であった。リードフ
レームを積重ねしたときの隙間Cは、凸起高さHを平均
0.4mmとした時、平均0.3mmであった。
That is, a plurality of lead frames are stacked at the time of assembly work, and a gap is required between adjacent lead frames in order to pick up one by one after that, but in order to form this gap, a protrusion 2 is formed on the lead frame surface. Is required. Usually, this protrusion is formed by stamping (half blanking) to obtain a required height H with respect to the plate thickness T of the lead frame. That is, a lead frame material having a material thickness T is punched (semi-blanking) with a punch (not shown) having a diameter D 1 to form a protrusion 2 having a height H. At this time, the punch forming punch diameter D 1 and the die diameter D 2 were substantially the same. The gap C when the lead frames are stacked is the average of the protrusion heights H.
When it was 0.4 mm, the average was 0.3 mm.

(発明が解決しようとする課題) 1)第4図に示す半導体リードフレーム1では、凸起2
が6ケ所配置されているが、リードフレームを板厚方向
に第3図の如く積上げした時、凸起部のコーナーだれ3
の所が、凸起形成用パンチの跡の穴(凹み)4に嵌まり
合い、1枚のリードフレームを吸盤又は爪等でつかみ上
げようとしても、その下側の1枚〜2枚が同時につかみ
上げられてしまい、半導体装置組立機械のワーク供給異
状となる問題点があった。
(Problems to be Solved by the Invention) 1) In the semiconductor lead frame 1 shown in FIG.
There are 6 corners, but when the lead frames are stacked in the plate thickness direction as shown in FIG.
Fits into the hole (concave) 4 of the protrusion forming punch, and even if one lead frame is to be picked up by a suction cup or a claw, the lower one or two sheets are simultaneously There was a problem in that the workpieces were picked up and the work supply of the semiconductor device assembling machine was abnormal.

2)また積重ね枚数が多くなれば多くなる程、リードフ
レーム自重が大きくなるため、凸起部が強く嵌まる問題
があった。さらに凸起部が6ケ所共同一量嵌まり込む事
は少なく、吸盤又は爪でつかみ上げるべく、リードフレ
ームを水平に積上げしようとしても、嵌まり込み具合の
差により、最下層リードフレームが水平な状態であって
も、数十枚積上げした最上層リードフレームは、リード
フレームの板厚以上の傾斜が発生しバキューム吸着不可
や爪によるつかみ不可等の問題があった。
2) Further, the larger the number of stacked sheets, the larger the weight of the lead frame becomes. Furthermore, the protrusions are unlikely to fit in six joints, so even if you try to stack the lead frames horizontally to pick them up with suction cups or claws, the bottom lead frame will be flat due to the difference in the fit. Even in the state, the dozens of stacked uppermost lead frames had a problem that they could not be attracted by vacuum and could not be gripped by the claws because of the inclination more than the thickness of the lead frame.

3)また嵌まり込み防止のため、凸起径D2を穴径D1より
大きくすると、凸起高さが低くなり、爪がつかむために
必要な積重ね隙間Cが規格値0.3mmミニマムを満足でき
ない欠点があった。
3) If the protrusion diameter D 2 is made larger than the hole diameter D 1 to prevent fitting, the protrusion height becomes lower, and the stacking gap C required for gripping by the claw satisfies the standard value 0.3 mm minimum. There was a flaw that I could not do.

本発明は、半導体装置の組立作業時に、リードフレーム
を水平に積上げする時に、リードフレーム1枚1枚が水
平に積上げできると共に、最上層の1枚をつかみ上げす
る時確実に1枚つかみ上げできる様にする事を目的とす
る。
INDUSTRIAL APPLICABILITY According to the present invention, when the lead frames are stacked horizontally during the assembly work of the semiconductor device, each of the lead frames can be stacked horizontally, and when the top layer is picked up, one piece can be reliably picked up. The purpose is to

[発明の構成] (課題を解決するための手段と作用) 本発明は、リードフレームの板厚方向に凸起を有する半
導体装置用リードフレームにおいて、前記リードフレー
ムの凸起成形用穴径が前記凸起の径より小さく、また凸
起の中央付近に凹みを有することを特徴とする半導体装
置用リードフレームである。また本発明は、リードフレ
ームに、その板厚方向に打ち出し凸起を設け、この凸起
の上部中央付近に凹みを設けて前記凸起径を押し広げ、
この凸起径を前記打ち出し凸起成形時に形成される凹み
の径より大とすることを特徴とする半導体装置用リード
フレームの製造方法である。
[Structure of the Invention] (Means and Actions for Solving the Problems) The present invention relates to a lead frame for a semiconductor device having a protrusion in the plate thickness direction of the lead frame, wherein the lead forming hole diameter of the lead frame is A lead frame for a semiconductor device, which is smaller than the diameter of the protrusion and has a recess near the center of the protrusion. Further, the present invention, the lead frame, provided with a protrusion in the plate thickness direction, a recess is provided in the vicinity of the center of the upper portion of the protrusion to spread the protrusion diameter,
The method for manufacturing a lead frame for a semiconductor device is characterized in that the diameter of the protrusion is set to be larger than the diameter of the recess formed at the time of the stamping and protrusion molding.

即ち本発明は、リードフレームの嵌まり合いを、凸起部
中央に設けた凹みにより凸起直径を拡大させて、凸起形
成用凹みに嵌まり合う事を防止し、確実に1枚1枚が爪
又は吸盤でつかみ上げ可能にした。また、凸起中央部に
直径拡大用凹みを形成すると同時に、打ち出し加工を用
いたことで、凸起高さを精度良く加圧形成できる事によ
り、リードフレームを多数枚積上げした時、例えば6ケ
所の凸起がバランス良くリードフレームを水平に保持で
きると共に、リードフレーム間の隙間の規格値を精度よ
く確保できる様にした。
That is, according to the present invention, the fitting of the lead frame is enlarged by the recess provided at the center of the protruding portion to prevent the fitting of the lead frame to the recess for forming the protruding portion, and the lead frame is securely attached one by one. Can be picked up with a nail or a suction cup. In addition, by forming a dent for enlarging the diameter in the central portion of the protrusion and using a stamping process, the height of the protrusion can be accurately formed under pressure. The protrusions of the lead frame allow the lead frame to be held horizontally, and the standard value of the gap between the lead frames can be secured accurately.

(実施例) 以下図面を参照して本発明の一実施例を説明する。第1
図は同実施例のリードフレームの凸起部での積重ね状態
を示す断面図、第2図は同リードフレームの凸起部形成
状態を示す金型部の断面図であるが、この実施例は前記
従来例と対応させた場合の例であるから、対応個所には
同一符号を用いる。ここでの特徴は、リードフレーム1
の凸起成形用凹み4の径d1が、凸起21の径d2とd1<d2
関係にあり、この関係をもたせるために、凸起中央付近
に凹み11を有することである。
Embodiment An embodiment of the present invention will be described below with reference to the drawings. First
FIG. 2 is a cross-sectional view showing a stacking state at the raised portions of the lead frame of the same embodiment, and FIG. 2 is a cross-sectional view of a die portion showing a state of formation of the raised portions of the lead frame. Since this is an example of a case corresponding to the above-mentioned conventional example, the same reference numerals are used for corresponding portions. The feature here is the lead frame 1
Diameter d 1 of the recess for the protrusion forming 4 is in the relationship of the projections 2 1 diameter d 2 and d 1 <d 2, in order to have this relationship, that it has a recess 11 in the vicinity of the protrusion center is there.

次に第2図により、第1図のリードフレームのつくり方
の一例を説明する。ダイ(凸起成形工具の凸側)21上面
にリードフレーム素材1を供給し、ストリッパー(凸起
成形工具の凹側)22でダイ21に強く素材1を押しつけた
状態で、凸起形成パンチ23を上方に押し上げする。つぎ
に上側から凸起拡大用パンチ24を押し下げて、ストリッ
パー22の内径d2に密着するまで加圧する。このd2の径は
凸起形成パンチ径d1より大きな寸法に設定する。実施例
ではd1=1.2mm、d2=1.5mm、また、パンチ23の押し上げ
量h2は凸起高さh3を高くするためにあまりに大きくしす
ぎると、リードフレーム素材1と凸起21とが破断してし
まうため、板厚t=0.6mmの時、パンチ押し上げ量h2
0.4mmとした。また凸起拡大用パンチ24の先端Rと角度
θは、リードフレーム素材1が内径d2に密着しやすい様
にR=0.25mm,θ=60°、押し込み深さh1=0.45mmと
し、充分押し込みして凸起高さh3の寸法が安定する様に
した。その結果凸起高さh3寸法は0.44±0.02mmであり、
隙間Cの規格値0.3mmミニマムを充分確保できた。
Next, referring to FIG. 2, an example of how to make the lead frame shown in FIG. 1 will be described. The lead frame material 1 is supplied to the upper surface of the die (convex side of the convex forming tool) 21, and the material forming 1 is strongly pressed against the die 21 by the stripper (concave side of the convex forming tool) 22. Push upwards. Next, the punch 24 for enlarging enlargement is pushed down from the upper side and pressed until it comes into close contact with the inner diameter d 2 of the stripper 22. The diameter of d 2 is set to be larger than the diameter of the protrusion forming punch d 1 . In the embodiment, d 1 = 1.2 mm, d 2 = 1.5 mm, and if the push-up amount h 2 of the punch 23 is too large in order to increase the protrusion height h 3 , the lead frame material 1 and the protrusion 2 are increased. Since 1 and will be broken, when the plate thickness t = 0.6 mm, the punch pushing amount h 2 =
It was 0.4 mm. Further, the tip R and the angle θ of the protrusion enlarging punch 24 are set to R = 0.25 mm, θ = 60 °, and the indentation depth h 1 = 0.45 mm so that the lead frame material 1 can be easily adhered to the inner diameter d 2. It was pushed in so that the dimension of the protrusion height h 3 became stable. As a result, the convex height h 3 dimension is 0.44 ± 0.02 mm,
The standard value of the clearance C, 0.3mm, could be sufficiently secured.

第1図、第2図のようにすれば、 1)凸起拡大用ポンチで凸起径を十分押し広げするた
め、リードフレームを積重ねた時凸起21が凹み4に嵌ま
り合う事が防止できた。
Figure 1, if as in the Fig. 2, 1) to spread sufficiently press the convex Okoshi径in protrusion expanding punch, be mate to TokitotsuOkoshi 2 1 dent 4 stacked lead frame I was able to prevent it.

2)凸起高さ方向の寸法を正確に形成できた事により、
6ケ所の凸起1のバラツキが少なく、リードフレームを
積重ねた時に、吸盤又は爪でつかみやすい水平状態を保
つことができると共に、リードフレーム間すき間Cを規
格値に保持できる。
2) Due to the fact that the dimension in the height direction of protrusion can be accurately formed,
There is little variation in the protrusions 1 at the six places, and when the lead frames are stacked, it is possible to maintain a horizontal state in which the suction cups or the claws can easily grasp, and it is possible to maintain the lead frame gap C at the standard value.

3)半導体装置組立機械の稼動率が、上記1),2)の効
果により5%向上した。
3) The operating rate of the semiconductor device assembly machine was improved by 5% due to the effects of 1) and 2) above.

4)また、半導体リードフレームのプレス加工後の洗浄
工程において、リードフレームが凸起により密着する事
が無いため、洗浄液が充分リードフレーム表面に当た
り、良好に洗浄できるという付随効果も有る。
4) Further, in the cleaning process after the semiconductor lead frame is pressed, the lead frame does not come into close contact with each other due to the protrusion, so that there is an attendant effect that the cleaning liquid sufficiently contacts the surface of the lead frame and can be cleaned well.

[発明の効果] 以上説明した如く本発明によれば、半導体装置の組立作
業時に、各リードフレームを水平に積上げることができ
ると共に、最上層の一枚を確実につかみ上げできる等の
利点を有するものである。
[Effects of the Invention] As described above, according to the present invention, it is possible to stack the lead frames horizontally during the assembling work of the semiconductor device and surely pick up one of the uppermost layers. I have.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の要部の積重ね状態を示す断
面図、第2図は同実施例を得る工程の断面図、第3図は
従来のリードフレームの積重ね状態を示す断面図、第4
図(a)はリードフレームの平面図、同図(b)は同側
面図である。 1…リードフレーム、21…凸起、4,11…凹み、21…ダ
イ、22…ストリッパー、23…凸起形成用パンチ、24…凸
起拡大用パンチ。
FIG. 1 is a sectional view showing a stacked state of an essential part of an embodiment of the present invention, FIG. 2 is a sectional view of a step of obtaining the same embodiment, and FIG. 3 is a sectional view showing a stacked state of a conventional lead frame. , 4th
FIG. 1A is a plan view of the lead frame, and FIG. 1B is a side view thereof. 1 ... lead frame, 2 1 ... protrusion, 4,11 ... recess, 21 ... die, 22 ... stripper, 23 ... protrusion forming punch, 24 ... protrusion expanding punch.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】リードフレームの板厚方向に凸起を有する
半導体装置用リードフレームにおいて、前記リードフレ
ームの凸起成形用穴径が前記凸起の径より小さく、また
凸起の中央付近に凹みを有することを特徴とする半導体
装置用リードフレーム。
1. A lead frame for a semiconductor device having a protrusion in a plate thickness direction of a lead frame, wherein a diameter of a protrusion forming hole of the lead frame is smaller than a diameter of the protrusion, and a recess is formed near a center of the protrusion. A lead frame for a semiconductor device, comprising:
【請求項2】リードフレームに、その板厚方向に打ち出
し凸起を設け、この凸起の上部中央付近に凹みを設けて
前記凸起径を押し広げ、この凸起径を前記打ち出し凸起
成形時に形成される凹みの径より大とすることを特徴と
する半導体装置用リードフレームの製造方法。
2. A lead frame is provided with a protrusion in the plate thickness direction, a recess is provided in the vicinity of the center of the upper portion of the protrusion to widen the protrusion diameter, and the protrusion diameter is used to form the protrusion protrusion. A method for manufacturing a lead frame for a semiconductor device, characterized in that the diameter is larger than the diameter of a recess that is sometimes formed.
JP1830789A 1989-01-27 1989-01-27 Lead frame for semiconductor device and manufacturing method thereof Expired - Fee Related JPH0695560B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1830789A JPH0695560B2 (en) 1989-01-27 1989-01-27 Lead frame for semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1830789A JPH0695560B2 (en) 1989-01-27 1989-01-27 Lead frame for semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH02198162A JPH02198162A (en) 1990-08-06
JPH0695560B2 true JPH0695560B2 (en) 1994-11-24

Family

ID=11967957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1830789A Expired - Fee Related JPH0695560B2 (en) 1989-01-27 1989-01-27 Lead frame for semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0695560B2 (en)

Also Published As

Publication number Publication date
JPH02198162A (en) 1990-08-06

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