JPH0695108B2 - Circuit voltage detector - Google Patents
Circuit voltage detectorInfo
- Publication number
- JPH0695108B2 JPH0695108B2 JP61280498A JP28049886A JPH0695108B2 JP H0695108 B2 JPH0695108 B2 JP H0695108B2 JP 61280498 A JP61280498 A JP 61280498A JP 28049886 A JP28049886 A JP 28049886A JP H0695108 B2 JPH0695108 B2 JP H0695108B2
- Authority
- JP
- Japan
- Prior art keywords
- electro
- probe
- optical
- circuit voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、回路に与える負荷が小さく、かつ検出速度が
速く、小形の回路の各部の電圧の検出等に適した新規な
回路電圧検出装置に関する。Description: (Industrial field of application) The present invention provides a novel circuit voltage detection device that has a small load applied to a circuit, a high detection speed, and is suitable for detecting the voltage of each part of a small circuit. Regarding
（従来の技術および発明が解決しようとする問題点） 回路電圧検出装置として、いわゆる回路テスタのように
極めて軽便なものから、極めて複雑な回路電圧検出装置
まで種々の装置が利用されている。近年、被測定回路が
複雑かつ小形となり極めて微細な部分の電圧および、高
速度の電圧変化を測定したいという強い要望がある。(Problems to be Solved by the Related Art and Invention) As a circuit voltage detecting device, various devices such as a so-called circuit tester, which is extremely convenient, to an extremely complicated circuit voltage detecting device are used. In recent years, there has been a strong demand for measuring the voltage of a very fine portion and the high-speed voltage change in which the circuit to be measured is complicated and small.
特に集積回路においては回路の各部分は、極めて小さ
く、外部から各接点の電圧を直接測定することは困難で
あり、外部に引き出された端子から得られる電圧情報の
みからは内部の動作を分析することは困難である。Especially in integrated circuits, each part of the circuit is extremely small, and it is difficult to directly measure the voltage of each contact from the outside, and the internal operation is analyzed only from the voltage information obtained from the externally drawn terminals. Is difficult.
さらに各回路の動作マージンが少ないので外部からのプ
ローブを接触させるだけで動作状況が変わってしまう。Furthermore, since the operating margin of each circuit is small, the operating condition changes only by contacting the probe from the outside.
さらに検出器の動作速度が被測定超高速回路に追従でき
ない場合も生じている。Further, there are cases in which the operating speed of the detector cannot follow the ultrahigh-speed circuit to be measured.
被接触で回路動作を検出することができる装置として、
電子ビームテスタが知られている。As a device that can detect circuit operation by being touched,
Electron beam testers are known.
しかし電子ビームテスタを動作させるには、真空を必要
とし、測定の対象は半導体表面が露出させられているも
のに限られる。However, in order to operate the electron beam tester, a vacuum is required, and the measurement target is limited to the one in which the semiconductor surface is exposed.
またこの電子ビームテスタによれば、測定対象を電子ビ
ームにより損なうおそれがある。Further, according to this electron beam tester, the measurement target may be damaged by the electron beam.
本発明の目的は、前述した従来製品の欠点を解消し、測
定対象の回路に与える負荷が小さく、かつ検出速度が速
く、小形の回路の各部の電圧の検出等に適した新規な回
路電圧検出装置を提供することにある。The object of the present invention is to solve the above-mentioned drawbacks of conventional products, to provide a small load on a circuit to be measured, to have a high detection speed, and to detect a novel circuit voltage suitable for detecting the voltage of each part of a small circuit. To provide a device.
（課題を解決するための手段） 前記目的を達成するために、本発明による回路電圧検出
装置は、 光プローブの先端部を被測定回路に近接または接触させ
て被測定回路の所定部分の電圧を検出する回路電圧検出
装置において、細い先端部分に金属層が設けられている
電気光学効果物体からなる光プローブと、 光源と、 前記光源からの光を前記プローブの前記電気光学効果物
体の内部に導き前記金属層で反射させる光学手段と、 前記プローブの前記金属層の電位により影響を受けた前
記電気光学効果物体の中を通過して変調を受けた被変調
光ビームの変調度を検出する検出手段と、 とを備えて構成されている。(Means for Solving the Problem) In order to achieve the above-mentioned object, a circuit voltage detection device according to the present invention is configured so that a tip portion of an optical probe is brought close to or in contact with a circuit to be measured so that the voltage of a predetermined portion of the circuit to be measured is changed. In a circuit voltage detection device for detecting, an optical probe composed of an electro-optical effect object having a metal layer provided on a thin tip portion thereof, a light source, and light from the light source is guided inside the electro-optical effect object of the probe. Optical means for reflecting at the metal layer, and detecting means for detecting the modulation degree of the modulated light beam that has been modulated by passing through the electro-optic effect object affected by the potential of the metal layer of the probe. And, and are configured.
前記電気光学効果物体の外周部に導電性電極を設けるこ
とができる。A conductive electrode may be provided on the outer peripheral portion of the electro-optical effect body.
前記変調は被変調光偏波面の回転とすることができる。The modulation may be rotation of the plane of polarization of the modulated light.
前記光プローブの中を通過する光ビームは、電気光学効
果物体の中で多数回反射されて通過させられるように構
成できる。A light beam passing through the optical probe may be configured to be reflected and passed through the electro-optic effect object multiple times.
前記プローブの先端部は、絶縁物で覆われているように
構成できる。The tip portion of the probe can be configured to be covered with an insulating material.
前記光源の光ビーム発生源をレーザダイオードとするこ
とができる。The light beam generating source of the light source may be a laser diode.
（実施例） 以下、図面等を参照して本発明をさらに詳しく説明す
る。(Example) Hereinafter, the present invention will be described in more detail with reference to the drawings.
第１図は、本発明による回路電圧検出装置の実施例を示
すブロック図である。FIG. 1 is a block diagram showing an embodiment of a circuit voltage detecting device according to the present invention.
略円筒状のLiTaO3の単結晶の電気光学効果物体１は光プ
ローブの中心部を形成している。The substantially cylindrical single crystal electro-optical effect body 1 of LiTaO 3 forms the center of the optical probe.
LiTaO3の単結晶の代わりにPLZTの単結晶やその他の電気
光学効果物体を使用することができる。Instead of the LiTaO 3 single crystal, a PLZT single crystal or other electro-optical effect body can be used.
光プローブの中心部を形成する前記LiTaO3の単結晶の下
端部は円錐状に加工され、最も小さい底面には金属薄膜
（金属層）２が被着されている。この金属薄膜２が被着
された部分が被測定回路部分に近接される光プローブの
尖端部を形成している。The lower end portion of the LiTaO 3 single crystal forming the central portion of the optical probe is processed into a conical shape, and a metal thin film (metal layer) 2 is deposited on the smallest bottom surface. The portion to which the metal thin film 2 is applied forms the tip of the optical probe that is brought close to the circuit to be measured.
またこの金属薄膜２は、電気光学効果物体１の内部に導
入された光ビーム３を反射して戻す反射面としての機能
も備えている。The metal thin film 2 also has a function as a reflecting surface that reflects and returns the light beam 3 introduced into the electro-optical effect body 1.
前記金属薄膜２に対応して前記電気光学効果物体１の外
周部に導電性電極４が設けられている。A conductive electrode 4 is provided on the outer peripheral portion of the electro-optical effect body 1 corresponding to the metal thin film 2.
この導電性電極４には適当な予定された電位（接地な
ど）または交流検出のための予定された交流電位または
パルス電位を与えられる。This conductive electrode 4 is provided with a suitable predetermined potential (ground or the like) or a predetermined AC potential or pulse potential for AC detection.
金属薄膜２の電位は被測定回路部分からの誘導により定
まり、導電性電極４と金属薄膜２との間に電界を発生す
る。The potential of the metal thin film 2 is determined by the induction from the circuit under test, and an electric field is generated between the conductive electrode 4 and the metal thin film 2.
なお、光プローブの尖端は、直接電気回路に触れても良
いように、絶縁物で覆われている。Note that the tip of the optical probe is covered with an insulator so that it may directly contact the electric circuit.
この電界により電気光学効果物体１の内部に導入された
光ビーム３が前記電界に対応する電気光学効果を受け
る。The electric field causes the light beam 3 introduced into the electro-optical effect object 1 to undergo the electro-optical effect corresponding to the electric field.
光プローブの構造、すなわち電気光学効果物体１、導電
性電極４、金属薄膜２の形状構造は、金属薄膜２の電位
の変化により電気光学効果物体１の内部に電気光学効果
が有効に生じるように配慮されている。The structure of the optical probe, that is, the shape structure of the electro-optical effect object 1, the conductive electrode 4, and the metal thin film 2 is such that the electro-optical effect is effectively generated inside the electro-optical effect object 1 by the change in the potential of the metal thin film 2. It is considered.
さらに、電気光学効果物体１の中を進行する光ビームの
光路は、電気光学効果の影響を受けやすくするために、
電気光学効果物体１の中の電気光学的変化を受けた部分
の光路長が長くなるように、結晶の中で多数回反射され
るようにすることができる。Furthermore, in order to make the optical path of the light beam traveling through the electro-optical effect object 1 susceptible to the electro-optical effect,
It can be reflected multiple times in the crystal so that the optical path length of the portion of the electro-optical effect object 1 that has undergone the electro-optical change becomes long.
導電性電極４の電位は絶縁させても良いが、適当な時定
数を与えるために導電性電極４、金属薄膜２の間には適
当な高抵抗薄膜を設けても良い。The potential of the conductive electrode 4 may be insulated, but an appropriate high resistance thin film may be provided between the conductive electrode 4 and the metal thin film 2 in order to provide an appropriate time constant.
この実施例装置の光源はレーザダイオード７から形成さ
れている。The light source of the device of this embodiment is formed of a laser diode 7.
前記光源からの光を前記プローブの前記電気光学効果物
体の内部を通過ないしは反射して通過するように光ビー
ムを入射させる光学手段は、偏光子８、ビームスプリッ
タ13,10,コリメータ9,ファイバ6,結合部５から形成され
ている。The optical means for injecting the light beam so that the light from the light source passes through or is reflected by the inside of the electro-optic effect object of the probe is a polarizer 8, beam splitters 13, 10, collimator 9, fiber 6 That is, it is formed from the connecting portion 5.
レーザダイオード７からの光は偏光子８、ビームスプリ
ッタ13に入射させられる。The light from the laser diode 7 is made incident on the polarizer 8 and the beam splitter 13.
ビームスプリッタ13を透過し、さらにビームスプリッタ
10を透過した光はコリメータ９でファイバ６に入射させ
られる。Beam splitter 13
The light transmitted through 10 is incident on the fiber 6 by the collimator 9.
ファイバ６を通過したプローブ光３は結合部５を介して
前述した光プローブの電気光学効果物体１に入射させら
れる。The probe light 3 that has passed through the fiber 6 is incident on the electro-optical effect body 1 of the optical probe described above via the coupling portion 5.
光プローブはファイバ６が許容する範囲内で、自由に移
動させられ、その範囲内で光プローブの先端を任意の測
定対象に近接させることができる。金属薄膜２の裏面で
反射して戻ってきたプローブ光３は結合部５、ファイバ
６、コリメータ９を逆行し、ビームスプリッタ10に入射
させられる。プローブ光３は電気光学効果物体１により
光偏波面が回転させられる。The optical probe can be freely moved within the range allowed by the fiber 6, and the tip of the optical probe can be brought close to any measurement target within the range. The probe light 3 reflected and returned from the back surface of the metal thin film 2 goes backward through the coupling portion 5, the fiber 6 and the collimator 9 and is incident on the beam splitter 10. The optical polarization plane of the probe light 3 is rotated by the electro-optic effect object 1.
この回転の度合が検出手段により検出される。The degree of this rotation is detected by the detection means.
ビームスプリッタ10で反射された光は、検光子11を介し
て光電変換素子12により光電変換される。The light reflected by the beam splitter 10 is photoelectrically converted by the photoelectric conversion element 12 via the analyzer 11.
ビームスプリッタ13で反射分岐された光は光電変換素子
14により光電変換される。The light reflected and split by the beam splitter 13 is a photoelectric conversion element.
Photoelectric conversion is performed by 14.
光電変換素子12,14の出力は比較回路15により比較され
両者の強度比信号が出力端16から得られる。The outputs of the photoelectric conversion elements 12, 14 are compared by the comparison circuit 15, and the intensity ratio signals of both are obtained from the output end 16.
（変形例） 光ビーム発生源は他の光源、例えばHeNeレーザでも良
い。(Modification) The light beam generation source may be another light source, for example, a HeNe laser.
この手段は、比測定回路信号あるいは金属薄膜２の電位
変化量が必ずしも大きくないため、11の出力信号は必ず
しも高感度ではない。In this means, the output signal of 11 is not necessarily highly sensitive because the ratio measuring circuit signal or the potential change amount of the metal thin film 2 is not necessarily large.
強度比信号を使用すると、さらに高いSN比で信号を得る
ことができるので、好ましい手段であるが必ずしも不可
欠の条件ではない。The use of intensity ratio signals is a preferred, but not necessarily essential, condition because it allows signals to be obtained at even higher signal to noise ratios.
また、12の代わりに別の素子例えばストリークカメラ等
も使用可能である。Also, instead of 12, another element such as a streak camera can be used.
（発明の効果） 以上詳しく説明したように、本発明による回路電圧検出
装置は、細い先端部分に金属層が設けられている電気光
学効果物体からなる光プローブと、光源と、前記光源か
らの光を前記プローブの前記電気光学効果物体の内部を
通過ないしは反射して通過するように光ビームを入射さ
せる光学手段と、前記プローブの前記金属層に誘導され
た電位により影響を受けた前記電気光学効果物体の中を
通過ないしは反射して通過することにより変調を受けた
被変調光ビームの変調度を検出する検出手段から構成さ
れている。(Effects of the Invention) As described in detail above, the circuit voltage detection device according to the present invention includes an optical probe including an electro-optical effect object having a metal layer provided on a thin tip portion thereof, a light source, and a light from the light source. Means for injecting a light beam so as to pass through or reflect through the inside of the electro-optical effect object of the probe, and the electro-optical effect affected by the potential induced in the metal layer of the probe. It is composed of detection means for detecting the degree of modulation of the modulated light beam that has been modulated by passing through or reflecting and passing through the object.
したがって、本発明による装置によれば、前記光プロー
ブの先端で回路の極小部分の電位を検出できる。Therefore, according to the device of the present invention, the potential of the minimum portion of the circuit can be detected at the tip of the optical probe.
そのため、集積回路内の電位の検出等に有効である。Therefore, it is effective for detecting the potential in the integrated circuit.
また被測定回路に直接接続されることはないので回路の
負荷とならず被測定回路の動作を乱すことはない。Further, since it is not directly connected to the circuit under test, it does not load the circuit and does not disturb the operation of the circuit under test.
さらに、本装置の応答速度は極めて速く、先端部の充放
電時間のみで制限されるがその静電容量は特に小さくな
されるので、従来の装置と比して格段に高速であり、し
かも高いインピーダンスである。Furthermore, the response speed of this device is extremely fast, and it is limited only by the charging / discharging time of the tip part, but its electrostatic capacitance is made particularly small, so it is much faster than conventional devices and has a high impedance. Is.
以上の説明から明らかなように、極小部分の電位を高速
に検出する装置としては従来にない優れた新しい装置を
本発明は提供するものであり、その効果は極めて大き
い。As is clear from the above description, the present invention provides an excellent new device that has never existed as a device for detecting the potential of a local minimum portion at high speed, and the effect thereof is extremely large.
第１図は、本発明による回路電圧検出装置の実施例を示
すブロック図である。 １……電気光学効果物体 ２……金属薄膜（金属層） ３……光ビーム（プローブ光） ４……導電性電極 ５……結合装置 ６……ファイバ ７……レーザダイオード ８……偏光子 ９……コリメータ 10,13……ビームスプリッタ 11……検光子 12,14……光電変換素子 15……比較回路 16……出力端子FIG. 1 is a block diagram showing an embodiment of a circuit voltage detecting device according to the present invention. 1 ... Electro-optic effect object 2 ... Metal thin film (metal layer) 3 ... Light beam (probe light) 4 ... Conductive electrode 5 ... Coupling device 6 ... Fiber 7 ... Laser diode 8 ... Polarizer 9 …… Collimator 10, 13 …… Beam splitter 11 …… Analyzer 12, 14 …… Photoelectric conversion element 15 …… Comparison circuit 16 …… Output terminal
Claims (6)
たは接触させて被測定回路の所定部分の電圧を検出する
回路電圧検出装置において、 細い先端部分に金属層が設けられている電気光学効果物
体からなる光プローブと、 光源と、 前記光源からの光を前記プローブの前記電気光学効果物
体の内部に導き前記金属層で反射させる光学手段と、 前記プローブの前記金属層の電位により影響を受けた前
記電気光学効果物体の中を通過して変調を受けた被変調
光ビームの変調度を検出する検出手段と、 を備えることを特徴とする回路電圧検出装置。1. A circuit voltage detection device for detecting the voltage of a predetermined portion of a circuit to be measured by bringing the tip portion of an optical probe into proximity with or in contact with the circuit to be measured, wherein electro-optic is provided with a metal layer at a thin tip portion. An optical probe composed of an effect object, a light source, an optical means for guiding light from the light source to the inside of the electro-optical effect object of the probe and reflecting the metal layer, and an influence of the potential of the metal layer of the probe. A circuit voltage detection device comprising: a detection unit that detects the degree of modulation of a modulated light beam that has been modulated by passing through the received electro-optical effect object.
電極が設けられている特許請求の範囲第１項記載の回路
電圧検出装置。2. The circuit voltage detection device according to claim 1, wherein the electro-optical effect object is provided with a conductive electrode on an outer peripheral portion thereof.
許請求の範囲第１項記載の回路電圧検出装置。3. The circuit voltage detecting device according to claim 1, wherein the modulation is rotation of a polarization plane of modulated light.
は、電気光学効果物体の中で多数回反射されて通過させ
られる特許請求の範囲第１項記載の回路電圧検出装置。4. The circuit voltage detecting device according to claim 1, wherein the light beam passing through the optical probe is reflected and passed through the electro-optical effect object a number of times.
ている特許請求の範囲第１項記載の回路電圧検出装置。5. The circuit voltage detecting device according to claim 1, wherein the tip of the probe is covered with an insulator.
ードである特許請求の範囲第１項記載の回路電圧検出装
置。6. The circuit voltage detecting device according to claim 1, wherein the light beam generating source of the light source is a laser diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280498A JPH0695108B2 (en) | 1986-11-25 | 1986-11-25 | Circuit voltage detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61280498A JPH0695108B2 (en) | 1986-11-25 | 1986-11-25 | Circuit voltage detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63133068A JPS63133068A (en) | 1988-06-04 |
| JPH0695108B2 true JPH0695108B2 (en) | 1994-11-24 |
Family
ID=17625925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61280498A Expired - Fee Related JPH0695108B2 (en) | 1986-11-25 | 1986-11-25 | Circuit voltage detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0695108B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7002230B2 (en) | 2003-02-07 | 2006-02-21 | Nikko Materials Co., Ltd. | CdTe-base compound semiconductor single crystal for electro-optic element |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE107778T1 (en) * | 1989-04-12 | 1994-07-15 | Hamamatsu Photonics Kk | METHOD AND DEVICE FOR DETECTING A STRESS. |
| EP0650067B1 (en) * | 1993-04-13 | 2004-09-01 | Agilent Technologies, Inc. | Electrooptic instrument |
| JPH0798329A (en) * | 1993-09-28 | 1995-04-11 | Hamamatsu Photonics Kk | E-o probe |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57161661A (en) * | 1981-03-31 | 1982-10-05 | Yutaka Ono | Measuring device by use of optical fiber |
| US4603293A (en) * | 1984-03-27 | 1986-07-29 | University Of Rochester | Measurement of electrical signals with subpicosecond resolution |
-
1986
- 1986-11-25 JP JP61280498A patent/JPH0695108B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| ＩＥＥＥＪ．ＱｕａｎｔｕｍＥｌｅｃｔｒｏｎｉｃｓ．Ｖｏｌ．ＱＥ−２２，Ｎｏ．１，ＰＰ．６９−７８，Ｊａｎ１９８６ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7002230B2 (en) | 2003-02-07 | 2006-02-21 | Nikko Materials Co., Ltd. | CdTe-base compound semiconductor single crystal for electro-optic element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63133068A (en) | 1988-06-04 |
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