JPH0691049B2 - Method and apparatus for removing organic film - Google Patents
Method and apparatus for removing organic filmInfo
- Publication number
- JPH0691049B2 JPH0691049B2 JP61044793A JP4479386A JPH0691049B2 JP H0691049 B2 JPH0691049 B2 JP H0691049B2 JP 61044793 A JP61044793 A JP 61044793A JP 4479386 A JP4479386 A JP 4479386A JP H0691049 B2 JPH0691049 B2 JP H0691049B2
- Authority
- JP
- Japan
- Prior art keywords
- organic film
- substrate
- chamber
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はLSI或いは超LSI等の大規模集積回路を形成した
チップ素材となる半導体ウエハー等の基体表面に形成さ
れた有機膜を除去する方法及びその装置に関する。The present invention relates to a method for removing an organic film formed on a surface of a substrate such as a semiconductor wafer which is a chip material on which a large-scale integrated circuit such as LSI or VLSI is formed. And its device.
（従来の技術） 半導体集積回路の製造工程においては、微細パターンを
形成するためにホトレジスト或いは有機絶縁膜などの有
機膜を基体表面に形成し、これら有機膜をそれぞれの役
目を達成したならば除去するようにしている。(Prior Art) In the manufacturing process of a semiconductor integrated circuit, an organic film such as a photoresist or an organic insulating film is formed on the surface of a substrate in order to form a fine pattern, and these organic films are removed if their respective functions are achieved. I am trying to do it.
そして斯かる有機膜の除去方法としては、強酸或いは有
機溶剤によって溶解除去していたが、使用できる薬剤が
限定されるとともに、作業環境や廃棄処理の問題がある
ため、現在ではプラズマを利用したドライ化が主流を占
めている。As a method for removing such an organic film, it has been dissolved and removed with a strong acid or an organic solvent, but since chemicals that can be used are limited and there are problems of working environment and disposal treatment, dry method using plasma is currently used. The occupancy is the mainstream.
（発明が解決しようとする問題点） ところで、半導体集積回路の製造工程にあっては、基体
表面の一部を有機膜で覆った状態で、基体表面にリン、
ボロン等のイオンを高速で衝突させ、有機膜で覆われて
いない部分に上記イオンを埋め込み部分的に半導体部分
を形成することが行われる。(Problems to be Solved by the Invention) In the process of manufacturing a semiconductor integrated circuit, phosphorus is formed on the surface of a substrate with a part of the surface of the substrate covered with an organic film.
Ions such as boron are caused to collide at high speed to fill the above-mentioned ions in a portion not covered with an organic film to partially form a semiconductor portion.
そして、上記工程においては有機膜の表層部はイオンの
衝突により炭化又は変質し、後に剥離液によって有機膜
を除去しようとしても、剥離液が浸透しないため剥離で
きず、またバッチ式のO2プラズマにより除去する場合に
は通常のアッシングの３倍以上の時間をかけなければな
らず、それでもハイカレント、ハイドーズ等のイオン注
入の場合には残渣が残る問題がある。Then, the surface portion of the organic film in the above process is carbonized or deteriorated by ion bombardment, attempting to remove the organic film by the peeling liquid after can not be peeled because the stripping solution does not penetrate, and O 2 plasma batch In the case of removing by means of, it is necessary to take three times or more as long as the time required for usual ashing, and yet there is a problem that a residue remains in the case of ion implantation such as high current and high dose.
そこで、枚葉式のO2プラズマにより有機膜を剥離するこ
とが考えられる。この方法によれば有機膜を高速で除去
できるが、長時間を要し基板にダメージを与えるおそれ
がある。Therefore, it is possible to peel off the organic film by single-wafer O 2 plasma. According to this method, the organic film can be removed at high speed, but it may take a long time and damage the substrate.
（問題点を解決するための手段） 上記問題点を解決すべく本発明は、平行平板型のプラズ
マ処理装置と分離型のプラズマ処理装置とを併設し、平
行平板型の処理装置で処理した基体を搬送装置により分
離型のプラズマ処理装置に移し、２段階で有機膜を除去
するようにした。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a parallel plate type plasma processing apparatus and a separation type plasma processing apparatus, and a substrate processed by the parallel plate type processing apparatus. Was transferred to a separate type plasma processing apparatus by a transfer device, and the organic film was removed in two steps.
（作用） 平行平板型のプラズマ処理装置において、O2プラズマに
より基体表面の有機膜のうち表層部の変質層を物理的に
除去し、次いで変質層が除かれた有機膜を分離型のプラ
ズマ処理装置の反応処理室において、化学的に除去す
る。(Action) in a parallel plate type plasma processing apparatus, O 2 plasma by physically removing the alteration layer of the surface layer portion of the organic film on the substrate surface, then the organic film deteriorated layer is removed separated plasma processing It is chemically removed in the reaction processing chamber of the device.
（実施例） 以下に本発明の実施例を添付図面に基づいて説明する。(Example) Below, the Example of this invention is described based on an accompanying drawing.
第１図は本発明に係る有機膜除去装置の縦断面図、第２
図は同装置の平断面図であり、ボックス状をなす装置本
体（１）の上面には平行平板型のプラズマ処理装置
（２）及び分離型のプラズマ処理装置（３）が併設さ
れ、平行平板型のプラズマ処理装置（２）のチャンバー
（４）内には高周波発振器（５）につながる平板状上部
電極（６）とこの上部電極（６）と平行な平板状下部電
極（７）が配設され、チャンバー（４）内をプラズマ発
生室（８）としている。FIG. 1 is a longitudinal sectional view of an organic film removing apparatus according to the present invention, FIG.
The figure is a plane cross-sectional view of the same apparatus. A parallel plate type plasma processing apparatus (2) and a separation type plasma processing apparatus (3) are provided side by side on the upper surface of a box-shaped apparatus body (1). Type plasma processing apparatus (2) has a plate-shaped upper electrode (6) connected to a high frequency oscillator (5) and a plate-shaped lower electrode (7) parallel to the upper electrode (6) in a chamber (4). Thus, the inside of the chamber (4) is used as a plasma generation chamber (8).
また、分離型のプラズマ処理装置（３）はチャンバー
（９）の上部を屈曲部（10）とし、この屈曲部（10）の
周囲に高周波発振器（11）につながる上部電極（12）を
巻回し、屈曲部（10）内をプラズマ発生室（13）とし、
下部電極（14）が配設されるチャンバー（９）の下部内
を反応処理室（15）としている。Further, in the separation type plasma processing apparatus (3), the upper part of the chamber (9) is made into a bent portion (10), and the upper electrode (12) connected to the high frequency oscillator (11) is wound around this bent portion (10). , The inside of the bent part (10) is the plasma generation chamber (13),
The lower part of the chamber (9) in which the lower electrode (14) is arranged serves as a reaction processing chamber (15).
一方、装置本体（１）内の支持板（16）上には上下方向
に一対のシリンダユニット（17），（18）が固着され、
シリンダユニット（17）のロッド上端には前記下部電極
（７）が、シリンダユニット（18）のロッド上端には前
記下部電極（14）がそれぞれ取り付けられている。而し
て、シリンダユニット（17），（18）を作動すること
で、下部電極（７），（14）は昇降動をなし、上昇した
場合には下部電極（７），（14）は本体（１）に形成し
た開口（19），（20）を介してチャンバー（４），
（９）内に臨み、下降した場合には本体（１）内に配設
した搬送ベルト（21），（22）よりも下方に位置する。On the other hand, a pair of cylinder units (17) and (18) are vertically fixed to the support plate (16) in the device body (1),
The lower electrode (7) is attached to the upper end of the rod of the cylinder unit (17), and the lower electrode (14) is attached to the upper end of the rod of the cylinder unit (18). By operating the cylinder units (17) and (18), the lower electrodes (7) and (14) move up and down, and when they rise, the lower electrodes (7) and (14) move to the main body. Through the openings (19) and (20) formed in (1), the chamber (4),
When facing the inside of (9) and descending, it is located below the conveyor belts (21) and (22) arranged in the main body (1).
また、本体（１）の両側には昇降部材（23），（24）を
配置している。これら昇降部材（23），（24）は４本の
支柱からなり、これら支柱間に複数の基板（Ｗ）を保持
したカセット（25）を取付け可能としている。カセット
（25）は一対の板体の対向面にスリットを形成し、この
スリットに基板（Ｗ）のエッジを挿入することで、複数
の基板（Ｗ）を上下方向に離間して保持するようにして
いる。Elevating members (23) and (24) are arranged on both sides of the main body (1). These elevating members (23), (24) are composed of four columns, and a cassette (25) holding a plurality of substrates (W) can be attached between these columns. The cassette (25) has slits formed on the opposing surfaces of a pair of plate bodies, and the edges of the substrates (W) are inserted into the slits to hold the plurality of substrates (W) vertically separated from each other. ing.
更に、装置本体（１）の両側で前記搬送ベルト（21），
（22）と同一高さ位置には搬送ベルト（26），（27）を
配置し、カセット（25）内の基板（Ｗ）を開口（28）を
介して搬送ベルト（21）上に、また搬送ベルト（22）上
の基板（Ｗ）を開口（29）を介してカセット（25）内に
受け渡すようにしている。Further, on both sides of the device body (1), the conveyor belt (21),
Conveyor belts (26) and (27) are arranged at the same height as (22), and the substrate (W) in the cassette (25) is placed on the conveyer belt (21) through the opening (28). The substrate (W) on the conveyor belt (22) is transferred into the cassette (25) through the opening (29).
以上の如き構成からなる除去装置を用いて基板（Ｗ）表
面に形成された有機膜を除去する方法を以下に述べる。A method of removing the organic film formed on the surface of the substrate (W) using the removing device having the above-described structure will be described below.
先ず、第３図に示すように昇降部材（23）を下降させ、
下部電極（７）を搬送ベルト（21）よりも下方に位置さ
せた状態で、カセット（25）内の最下段の基板（Ｗ）を
搬送ベルト（26）によって搬送ベルト（21）上に受け渡
し、搬送ベルト（21）の駆動で、基板（Ｗ）を下部電極
（７）上まで搬送する。次いで、図示しないシリンダユ
ニットを作動させてサブテーブル（50）を上昇せしめ、
搬送ベルト（21）上の基板（Ｗ）を受け取り、続いて下
部電極（７）が昇降動できる程度に搬送ベルト（21）を
相互に離反して開き、シリンダユニット（17）を作動さ
せて下部電極（７）を上昇せしめ、開口（19）に嵌合機
密とし、チャンバー（４）内のプラズマ発生室（８）内
に下部電極（７）を臨ませる。First, as shown in FIG. 3, lower the elevating member (23),
With the lower electrode (7) positioned below the conveyor belt (21), the lowermost substrate (W) in the cassette (25) is transferred onto the conveyor belt (21) by the conveyor belt (26), The substrate (W) is transported onto the lower electrode (7) by driving the transport belt (21). Then, activate a cylinder unit (not shown) to raise the sub table (50),
The substrate (W) on the conveyor belt (21) is received, and then the conveyor belt (21) is opened apart from each other so that the lower electrode (7) can move up and down, and the cylinder unit (17) is operated to move the lower portion. The electrode (7) is lifted and fitted into the opening (19) to form a seal, and the lower electrode (7) is exposed to the plasma generation chamber (8) in the chamber (4).
この後、プラズマ発生室（８）内を0.8Torrまで減圧
し、500Wで１分間処理する。すると基板（Ｗ）表面に形
成された有機膜のうち上層の変質層はO2プラズマによっ
て物理的に除去される。Then, the inside of the plasma generation chamber (8) is decompressed to 0.8 Torr and treated at 500 W for 1 minute. Then, the upper altered layer of the organic film formed on the surface of the substrate (W) is physically removed by O 2 plasma.
以上の如くして上層の変質層を除去したならば、上記と
は逆の動作により、即ちサブテーブル（50）を下降させ
て、サブテーブル（50）上の基板（Ｗ）を搬送ベルト
（21）上に移し、この後搬送ベルト（21）を駆動し、基
板（Ｗ）を搬送ベルト（22）上に移す。次いで搬送ベル
ト（22）を駆動し基板（Ｗ）を搬送ベルト（22）よりも
下方位置に待機している下部電極（14）上まで搬送す
る。そして、上記した基板（Ｗ）をチャンバー（４）内
に搬入するときと同じ手順により、図示しないシリンダ
ユニットを作動させてサブテーブル（51）を上昇せし
め、搬送ベルト（22）上の基体（Ｗ）を受け取り、続い
て下部電極（14）が昇降動できる程度に搬送ベルト（2
2）を相互に離反して開き、シリンダユニット（18）を
作動させて下部電極（14）を上昇せしめ開口（20）に嵌
合機密とし、チャンバー（９）内の反応処理室（15）内
に下部電極（14）を臨ませる。When the upper deteriorated layer is removed as described above, the operation reverse to the above, that is, the sub-table (50) is lowered, and the substrate (W) on the sub-table (50) is conveyed to the conveyor belt (21). ), And then the conveyor belt (21) is driven to transfer the substrate (W) onto the conveyor belt (22). Then, the conveyor belt (22) is driven to convey the substrate (W) onto the lower electrode (14) waiting at a position below the conveyor belt (22). Then, by the same procedure as when the substrate (W) is carried into the chamber (4), a cylinder unit (not shown) is operated to raise the sub table (51), and the substrate (W) on the conveyor belt (22) is moved. ), And then the conveyor belt (2
2) are opened apart from each other, the cylinder unit (18) is operated to raise the lower electrode (14) and fit into the opening (20) to form a secret, and inside the reaction processing chamber (15) inside the chamber (9) The lower electrode (14) is exposed to.
この後、チャンバー（９）内にC2F6を５容量％、O2を残
部とした混合ガスを導入するとともにチャンバー（９）
内を1Torrに減圧し、250Wで40秒間処理する。すると、
基板（Ｗ）表面に形成された有機膜は活性化した反応ガ
ス（混合ガス）との反応により化学的に除去される。Then, a mixed gas containing 5% by volume of C 2 F 6 and O 2 as the balance was introduced into the chamber (9) and the chamber (9)
The inside pressure is reduced to 1 Torr and the treatment is performed at 250 W for 40 seconds. Then,
The organic film formed on the surface of the substrate (W) is chemically removed by the reaction with the activated reaction gas (mixed gas).
この後、サブテーブル（51）を下降させ、有機膜を除去
した基板（Ｗ）を搬送ベルト（22）上に移し、搬送ベル
ト（22）の駆動で基板（Ｗ）を搬送ベルト（27）上に受
け渡し、搬送ベルト（27）の駆動で基板（Ｗ）をカセッ
ト（25）内に収納する。そしてこの工程を繰り返すこと
により、一方のカセット（25）内の基板（Ｗ）を全て処
理し、他方のカセット（25）内に収納する。Then, the sub-table (51) is lowered, the substrate (W) from which the organic film has been removed is transferred onto the transport belt (22), and the substrate (W) is driven onto the transport belt (27) by driving the transport belt (22). Then, the substrate (W) is stored in the cassette (25) by driving the conveyor belt (27). Then, by repeating this step, all the substrates (W) in one cassette (25) are processed and housed in the other cassette (25).
第４図は搬送機構の別実施例を示す平面図であり、第１
図乃至第３図に示す実施例にあっては、搬送ベルト（2
1），（22）及びシリンダユニット（17），（18）によ
り基板（Ｗ）をチャンバー（４），（９）内に出入れす
るようにしたが、この実施例にあってはアーム（30）に
より基板（Ｗ）の受け渡しを行うようにしている。即ち
アーム（30）は基板（Ｗ）を保持するための吸着盤を備
えており、且つアーム（30）は軸（31）を中心として水
平面内で揺動可能（矢視ａ方向）で前後動可能（矢視ｂ
方向）とされ、更に上下動可能とされている。FIG. 4 is a plan view showing another embodiment of the transport mechanism.
In the embodiment shown in FIGS. 3 to 3, the conveyor belt (2
Although the substrate (W) is moved into and out of the chambers (4) and (9) by means of 1), (22) and the cylinder units (17), (18), the arm (30) is used in this embodiment. ), The substrate (W) is transferred. That is, the arm (30) is provided with a suction plate for holding the substrate (W), and the arm (30) can swing back and forth about the axis (31) in the horizontal plane (direction a in the arrow direction). Possible (view b)
Direction) and can be moved up and down.
斯かる動きをなすアーム（30）により、カセットから基
板（Ｗ）を受け取り、これをプラズマ処理装置（２）内
に搬入して、基板（Ｗ）表面の有機膜のうち上層の変質
層を除去し、次いで基板（Ｗ）をプラズマ処理装置
（３）内に移し、基板（Ｗ）表面の有機膜を完全に除去
するようにしてもよい。By the arm (30) performing such a movement, the substrate (W) is received from the cassette and carried into the plasma processing apparatus (2) to remove the upper altered layer of the organic film on the surface of the substrate (W). Then, the substrate (W) may be moved into the plasma processing apparatus (3) to completely remove the organic film on the surface of the substrate (W).
また、本実施例の分離型プラズマ処理装置のチャンバー
の上部には屈曲部を設けたが、特に屈曲させる必要はな
く、直立型としてもよい。Further, although the bent portion is provided on the upper portion of the chamber of the separation type plasma processing apparatus of the present embodiment, it is not particularly necessary to bend it, and it may be an upright type.
（発明の効果） 以上に説明した如く本発明によれば、基板上に形成した
有機膜のうち、上層の変質層については平行平板型のプ
ラズマ処理装置によって物理的に除去するようにし、ま
た変質層が除去された残りの有機膜については分離型の
プラズマ処理装置によって化学的に除去するようにした
ので、有機膜の除去を極めて迅速に行うことができ、且
つ基体にダメージを与えることもない。(Effects of the Invention) As described above, according to the present invention, of the organic film formed on the substrate, the upper altered layer is physically removed by the parallel plate type plasma processing apparatus, and the altered layer is also altered. The remaining organic film from which the layer has been removed is chemically removed by a separation-type plasma processing apparatus, so that the organic film can be removed extremely quickly and does not damage the substrate. .
第１図は本発明に係る有機膜除去装置の縦断面図、第２
図は同装置の平断面図、第３図は同装置の作用を説明し
た第１図と同様の縦断面図、第４図は搬送装置の別実施
例を示す平面図である。 尚、図面中（１）は装置本体、（２）は平行平板型のプ
ラズマ処理装置、（３）は分離型のプラズマ処理装置、
（４），（９）はチャンバー、（６），（12）は上部電
極、（７），（14）は下部電極、（８），（13）はプラ
ズマ発生室、（15）は反応処理室、（17），（18）はシ
リンダユニット、（21），（22），（26），（27）は搬
送ベルト、（30）はアーム、（Ｗ）は基板である。FIG. 1 is a longitudinal sectional view of an organic film removing apparatus according to the present invention, FIG.
FIG. 4 is a plan sectional view of the same apparatus, FIG. 3 is a vertical sectional view similar to FIG. 1 for explaining the operation of the apparatus, and FIG. 4 is a plan view showing another embodiment of the conveying apparatus. In the drawings, (1) is the apparatus main body, (2) is a parallel plate type plasma processing apparatus, (3) is a separation type plasma processing apparatus,
(4) and (9) are chambers, (6) and (12) are upper electrodes, (7) and (14) are lower electrodes, (8) and (13) are plasma generating chambers, and (15) is reaction treatment. Chambers, (17) and (18) are cylinder units, (21), (22), (26) and (27) are conveyor belts, (30) is an arm and (W) is a substrate.
Claims (2)
すことで、有機膜の表層をなす変質層を荷電粒子の衝突
による物理的手段を主体として除去し、次いで変質層が
除去された有機膜を活性化した反応ガス中に晒すことで
化学的手段を主体として除去するようにしたことを特徴
とする有機膜の除去方法。1. An organic film formed on a substrate is exposed to O 2 plasma to remove the deteriorated layer forming the surface of the organic film mainly by physical means by collision of charged particles, and then the deteriorated layer is removed. A method for removing an organic film, characterized in that the organic film is removed mainly by chemical means by exposing the organic film to an activated reaction gas.
行に配置し、チャンバー内をプラズマ発生室とした平行
平板型プラズマ処理装置と、このプラズマ処理装置に隣
設されチャンバー内をプラズマ発生室と反応処理室とに
分離した分離型プラズマ処理装置と、平行平板型プラズ
マ処理装置によって処理された基板を分離型プラズマ処
理装置まで搬送する搬送装置とからなる有機膜の除去装
置。2. A parallel plate type plasma processing apparatus in which an upper electrode and a lower electrode are arranged in parallel in a chamber and the inside of the chamber is a plasma generating chamber, and the inside of the chamber adjacent to the plasma processing apparatus is a plasma generating chamber. An apparatus for removing an organic film comprising a separation type plasma processing apparatus which is separated into a reaction processing chamber and a transfer apparatus which transfers a substrate processed by the parallel plate type plasma processing apparatus to the separation type plasma processing apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044793A JPH0691049B2 (en) | 1986-02-28 | 1986-02-28 | Method and apparatus for removing organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61044793A JPH0691049B2 (en) | 1986-02-28 | 1986-02-28 | Method and apparatus for removing organic film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202521A JPS62202521A (en) | 1987-09-07 |
| JPH0691049B2 true JPH0691049B2 (en) | 1994-11-14 |
Family
ID=12701294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61044793A Expired - Lifetime JPH0691049B2 (en) | 1986-02-28 | 1986-02-28 | Method and apparatus for removing organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691049B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62271435A (en) * | 1986-05-20 | 1987-11-25 | Fujitsu Ltd | Expoliating method for resist |
| JP2838528B2 (en) * | 1989-01-10 | 1998-12-16 | 日本真空技術株式会社 | Plasma ashing device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167021A (en) * | 1983-03-14 | 1984-09-20 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS59189633A (en) * | 1983-04-13 | 1984-10-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS60249328A (en) * | 1984-05-25 | 1985-12-10 | Kokusai Electric Co Ltd | Apparatus for dry-etching and chemical vapor-phase growth of semiconductor wafer |
-
1986
- 1986-02-28 JP JP61044793A patent/JPH0691049B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62202521A (en) | 1987-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |