JPH0690292B2 - Choking detection circuit of radiation measuring device using semiconductor detector - Google Patents
Choking detection circuit of radiation measuring device using semiconductor detectorInfo
- Publication number
- JPH0690292B2 JPH0690292B2 JP62070696A JP7069687A JPH0690292B2 JP H0690292 B2 JPH0690292 B2 JP H0690292B2 JP 62070696 A JP62070696 A JP 62070696A JP 7069687 A JP7069687 A JP 7069687A JP H0690292 B2 JPH0690292 B2 JP H0690292B2
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- semiconductor detector
- radiation
- pulse
- silicon semiconductor
- measuring device
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体検出器を用いた放射線検出装置に係
り、特に原子力発電所内などの各部放射線を測定する放
射線モニタや、個人被曝を監視する線量計の如き放射線
検出装置に発生する窒息現象を検出できる回路に関する
ものである。Description: TECHNICAL FIELD The present invention relates to a radiation detection apparatus using a semiconductor detector, and particularly to a radiation monitor for measuring radiation in each part of a nuclear power plant or the like, and personal exposure monitoring. The present invention relates to a circuit that can detect a choking phenomenon that occurs in a radiation detection device such as a dosimeter.
従来、原子力発電所などの各部放射線を測定する放射線
モニタや、個人被曝を監視する線量計の如き放射線検出
装置は、放射線を検出する検出センサにGM計数管を用い
ており、このGM計数管からの出力信号を基に放射線を測
定している。かかる放射線検出装置に用いられるGM計数
管は高放射下におかれると窒息現象を発生するというこ
とが知られている。一般にGM計数管においては、入射荷
電粒子による一つの放電が停止した後に、次の電荷粒子
が入射してもこれに基づく次の放電が起らない不感時間
（デツド・タイム）が認められ、このGM計数管固有のデ
ツド・タイムの存在によつて、GM計数管を高放射線下で
使用するとデツド・タイムの割合が大きくなり、ついに
は連続放電状態となつて放電電流は飽和し、そして出力
パルスの振幅が小さくなり、さらには出力パルスが出な
くなる。この現象をGM計数管の窒息現象という。Conventionally, radiation detectors such as radiation monitors that measure radiation in each part of a nuclear power plant, and dosimeters that monitor individual exposures use GM counter tubes as detection sensors to detect radiation. Radiation is measured based on the output signal of. It is known that the GM counter used in such a radiation detection device causes a choking phenomenon when exposed to high radiation. Generally, in a GM counter, there is a dead time (dead time) in which the next discharge based on the next charged particle does not occur even after the next discharge of charged particles after one discharge is stopped. Due to the existence of the dead time inherent to the GM counter, when the GM counter is used under high radiation, the proportion of the dead time becomes large, and finally the discharge current saturates in the continuous discharge state, and the output pulse Becomes smaller, and no output pulse is output. This phenomenon is called the choking phenomenon of the GM counter.
このような窒息現象を有効に検出しないと、測定上重要
な誤りを起すこととなる。そこで、従来の放射線測定装
置は、前記窒息現象を有効に検出する回路として、高圧
電源からGM計数管へ流す電流をGM計数管の低圧部（接地
側）で直接検出するようにした回路を設けて窒息検出す
るか、または特開昭55-26484号に記載されているように
光結合トランジスタにより、GM計数管に流れる電流を検
出するようにした回路を設けて窒息検出していた。If such a choking phenomenon is not effectively detected, an important error in measurement will occur. Therefore, the conventional radiation measuring device is provided with a circuit for directly detecting the current flowing from the high-voltage power supply to the GM counter at the low-voltage part (ground side) of the GM counter as a circuit for effectively detecting the suffocation phenomenon. The suffocation is detected by the suffocation detection, or as described in JP-A-55-26484, the suffocation is detected by providing a circuit for detecting the current flowing through the GM counter by an optical coupling transistor.
ところで、近年、半導体技術の発展に伴つてGM計数管の
代りにシリコン半導体検出器が用いられるようになつて
きた。かかる検出器を用いた計測系においても発生原理
は異なるものの、窒息現象が発生することが知られてい
る。しかしながら、半導体検出器を用いた計測系の窒息
検出について記載された文献は見当たらず、半導体検出
器を用いた計測系の窒息検出の技術の確立が望まれてい
た。By the way, in recent years, with the development of semiconductor technology, a silicon semiconductor detector has been used in place of the GM counter tube. It is known that the suffocation phenomenon occurs in the measurement system using such a detector, though the principle of occurrence is different. However, there is no literature describing the suffocation detection of the measurement system using the semiconductor detector, and establishment of a technique for suffocation detection of the measurement system using the semiconductor detector has been desired.
すなわち、上記従来技術は、半導体検出器を用いた計測
系の窒息検出ではなく、GM計数管についてのものである
ことから、そのまま従来技術を用いることはできない。
このように従来技術を用いることのできない理由は、ま
ず、GM計数管の場合、高圧電源（約500〜1000V）を用い
ることにある。つまり、窒息現象を検出するために直接
電流を検出しているが、このようにするには、高圧電源
の低圧部（接地部）で検出しなければならず、高圧電源
の回路構成に制約が伴い、かつ複雑であるという問題が
あり、かつ半導体検出器を用いる場合に適用不能であ
る。That is, since the above-mentioned conventional technique is not for the suffocation detection of the measurement system using the semiconductor detector but for the GM counter tube, the conventional technique cannot be used as it is.
The reason why the conventional technique cannot be used is that a high-voltage power source (about 500 to 1000 V) is used in the case of the GM counter. In other words, the current is directly detected to detect the suffocation phenomenon, but in order to do so, it must be detected at the low-voltage part (grounding part) of the high-voltage power supply, which limits the circuit configuration of the high-voltage power supply. It is accompanied and complicated, and is not applicable when using a semiconductor detector.
また、窒息現象を検出するために光結合トランジスタで
電流検出を行なうようにした従来技術では、高感度の光
結合トランジスタが必要であつて、かつそのトランジス
タに安定した特性が要求されることになり、GM計数管に
比べ微弱電流の検出にはおのずと限界があり、これも半
導体検出器を用いる場合に難点がある。Further, in the conventional technology in which the photocoupling transistor is used to detect the current in order to detect the suffocation phenomenon, a highly sensitive photocoupling transistor is required and stable characteristics are required for the transistor. As compared with the GM counter, there is a limit to the detection of the weak current, which is also a problem when using the semiconductor detector.
本発明は、上記問題を解消するためになされたもので、
半導体検出器に供給するバイアス電源が非常に低い電圧
であることに着目し、バイアス電源の高圧側負荷抵抗の
微弱な電圧降下を直接検出することにより、計測系の窒
息現象を検出し、もつて窒息現象に基づく指示計のみか
け上の低下による誤つた測定を防止する半導体検出器を
用いる放射線計測装置の窒息検出回路を提供することを
目的とする。The present invention has been made to solve the above problems,
Focusing on the fact that the bias power supply supplied to the semiconductor detector has a very low voltage, the suffocation phenomenon of the measurement system can be detected by directly detecting the weak voltage drop of the load resistance on the high-voltage side of the bias power supply. An object of the present invention is to provide a choking detection circuit of a radiation measuring apparatus using a semiconductor detector that prevents erroneous measurement due to apparent deterioration of an indicator based on the choking phenomenon.
上記目的を達成した本発明は、バイアス電源から電流を
供給され放射線を検出してパルスを出力するシリコン半
導体検出器と、前記シリコン半導体検出器から出力され
たパルス信号を増幅するパルス増幅器と、該パルス増幅
器からのパルス信号を処理し、放射線の強度に比例した
指示を指示させる線量率計装置とからなる放射線計測装
置において、上記バイアス電源の高圧側に接続される負
荷抵抗を電圧降下を検出する手段と、該手段から出力さ
れる信号の直流成分を、予め設定してある窒息検出値と
比較するコンパレータとを設けてなることを特徴とする
ものである。The present invention, which has achieved the above object, provides a silicon semiconductor detector that is supplied with a current from a bias power source, detects radiation, and outputs a pulse, and a pulse amplifier that amplifies a pulse signal output from the silicon semiconductor detector, In a radiation measuring device comprising a pulse rate signal from a pulse amplifier and a dose rate measuring device for giving an instruction proportional to the intensity of radiation, a load resistor connected to the high voltage side of the bias power supply detects a voltage drop. And a comparator for comparing the DC component of the signal output from the means with a preset choking detection value.
半導体検出器は、高放射線下では多数の電荷パルス信号
を発生し、その発生パルス数は放射線の強さに比例す
る。バイアス電源は負荷抵抗を介して半導体検出器に供
給される。半導体検出器へ流れる電流は、当該負荷抵抗
にも流れる。したがつて、該負荷抵抗に接続された手段
（増幅回路）は、バイアス電源から半導体検出器へ供給
する電流を検出することができる。また当該手段は、バ
イアス電源側に接続されているため、検出器信号に与え
るノイズは少ない。前記手段で検出した信号のうちの直
流分を予め設定した設定値とコンパレータで比較し、設
定値以上の直流電流が半導体検出器に流れたときは、半
導体検出器の窒息が、あるいは絶縁低下であるので、放
射線測定が正確に行なわれていないことを判断すること
ができる。The semiconductor detector generates a large number of charge pulse signals under high radiation, and the number of generated pulses is proportional to the intensity of the radiation. The bias power supply is supplied to the semiconductor detector via the load resistance. The current flowing to the semiconductor detector also flows to the load resistance. Therefore, the means (amplifier circuit) connected to the load resistor can detect the current supplied from the bias power supply to the semiconductor detector. Further, since the means is connected to the bias power source side, the noise given to the detector signal is small. The direct current component of the signal detected by the means is compared with a preset value set by a comparator, and when a direct current equal to or higher than the set value flows to the semiconductor detector, choking of the semiconductor detector or insulation deterioration is caused. Therefore, it can be determined that the radiation measurement is not performed accurately.
以下、本発明の一実施例を図面に基づいて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
図は本発明の実施例を示す回路図である。The drawing is a circuit diagram showing an embodiment of the present invention.
１はバイアス電源であり、このバイアス電源１からシリ
コン半導体検出器２に電流が供給されるように回路構成
されている。シリコン半導体検出器２からのパルスを増
幅するパルス増幅器３がシリコン半導体検出器２のアノ
ード・カソード間に接続されている。パルス増幅器３か
らのパルスを計数して放射線の強度を比例した指示をす
る線量率計装置４がパルス増幅器３の出力に接続されて
いる。Reference numeral 1 denotes a bias power source, and the circuit configuration is such that the bias power source 1 supplies a current to the silicon semiconductor detector 2. A pulse amplifier 3 for amplifying the pulse from the silicon semiconductor detector 2 is connected between the anode and the cathode of the silicon semiconductor detector 2. A dose rate meter device 4 for counting the pulses from the pulse amplifier 3 and giving a proportional indication of the intensity of the radiation is connected to the output of the pulse amplifier 3.
放射線計測装置は、上記バイアス電源１と、シリコン半
導体検出器２と、パルス増幅器３と、線量率計装置４と
から構成されている。The radiation measuring device is composed of the bias power supply 1, the silicon semiconductor detector 2, the pulse amplifier 3, and the dose rate measuring device 4.
また、パルス増幅器３は、増幅器A30と、正入力端子が
抵抗R31を介して接地され、負入力端子がコンデンサC31
を介してシリコン半導体検出器２のカソードに接続さ
れ、負入力端子と出力端子との間にコンデンサC32、抵
抗R32の並列回路を接続して構成されている。Further, the pulse amplifier 3 has an amplifier A 30 , a positive input terminal thereof is grounded through a resistor R 31 , and a negative input terminal thereof is a capacitor C 31.
It is connected to the cathode of the silicon semiconductor detector 2 via the, and is configured by connecting a parallel circuit of a capacitor C 32 and a resistor R 32 between the negative input terminal and the output terminal.
次に、バイアス電源１とシリコン半導体検出器２との間
に、抵抗R1、負荷抵抗５、抵抗R2からなる直列回路を接
続し、負荷抵抗５と抵抗R2からなる直列回路を接続し、
負荷抵抗５と抵抗R2との接続点とアースとの間にコンデ
ンサ６を接続しておく。負荷抵抗５の両端には、この電
圧降下を検出し増幅する増幅回路７が設けられている。
この増幅回路７の出力端には、その出力信号のうちの直
流成分のみを取り出すローパスフイルタ８が接続されて
いる。このローパスフイルタ８からの直流成分と、予め
窒息検出設定器９に設定してある設定値とを比較するコ
ンパレータ10を設けてある。コンパレータ10の出力は、
出力回路11で増幅されて必要に応じて用いられる。Next, between the bias power source 1 and the silicon semiconductor detector 2, a series circuit composed of a resistance R 1 , a load resistance 5 and a resistance R 2 is connected, and a series circuit composed of a load resistance 5 and a resistance R 2 is connected. ,
A capacitor 6 is connected between the connection point between the load resistor 5 and the resistor R 2 and the ground. An amplifier circuit 7 that detects and amplifies this voltage drop is provided at both ends of the load resistor 5.
A low-pass filter 8 for extracting only the DC component of the output signal is connected to the output terminal of the amplifier circuit 7. A comparator 10 for comparing the direct current component from the low-pass filter 8 with a set value preset in the choking detection setting device 9 is provided. The output of the comparator 10 is
It is amplified by the output circuit 11 and used as needed.
増幅回路７は、増幅器A71，A72と抵抗R71，R72，R73と
からなる前段増幅回路、この前段増幅回路からの信号を
増幅する増幅器A73，抵抗A74，R75，R76，R77とからな
る後段差動増幅回路からなる。The amplifier circuit 7 includes a pre-stage amplifier circuit including amplifiers A 71 and A 72 and resistors R 71 , R 72 and R 73 , an amplifier A 73 for amplifying a signal from the pre-stage amplifier circuit, resistors A 74 , R 75 and R. It consists of a post-stage differential amplifier circuit consisting of 76 and R 77 .
ローパスフイルタ８は、アクテイブフイルタで構成さ
れ、増幅器A81と、抵抗R81，R82と、コンデンサC81，C
82とからなる。The low-pass filter 8 is composed of an active filter, and has an amplifier A 81 , resistors R 81 and R 82 , and capacitors C 81 and C.
It consists of 82 and.
出力回路11は、トランジスタTR111と、抵抗R111，R112
とからなる。The output circuit 11 includes a transistor TR 111 and resistors R 111 and R 112.
Consists of.
次に、本実施例の動作を説明する。Next, the operation of this embodiment will be described.
放射線モニタの検出器として用いられるシリコン半導体
検出器２は、放射線により電荷パルス信号を発生するも
ので、放射線が高くなると、発生パルス数が増大する。
電荷パルスの発生に伴いバイアス電源１から電荷を供給
する。シリコン半導体検出器２から発生する電荷パルス
は、パルス増幅器３で電荷パルス信号を電圧信号に増幅
し、線量率指示計装置４にて必要な処理をして、その測
定値を指示する。The silicon semiconductor detector 2 used as a detector of the radiation monitor generates a charge pulse signal by radiation, and the number of generated pulses increases as the radiation becomes higher.
The charge is supplied from the bias power supply 1 in accordance with the generation of the charge pulse. The charge pulse generated from the silicon semiconductor detector 2 is amplified by the pulse amplifier 3 into a voltage signal, and the dose rate indicator device 4 performs necessary processing to indicate the measured value.
高放射線下においては、発生パルス数が多くなり、パル
ス増幅器３以降の回路の不感時間により、パルス数え落
としの率加が大きくなり、ついには、パルス計数率が下
がり、線量率指示計装置４での指示が下る。これはみか
け上、線量計が低下したことにより、測定上、重大な誤
りを起こすことになる。これが、シリコン半導体検出装
置を用いた計測系の窒息現象である。Under high radiation, the number of pulses generated increases, and the dead rate of the circuits after the pulse amplifier 3 increases the rate of pulse counting down, and finally the pulse count rate decreases, and the dose rate indicator device 4 Will give you instructions. This apparently causes a serious error in measurement due to the lowered dosimeter. This is the choking phenomenon of the measurement system using the silicon semiconductor detection device.
上記のような窒息現象を検出するため、バイアス電源１
をシリコン半導体検出器２に供給するラインに接続され
るバイアス電源側の負荷抵抗５の両端の電圧降下を、増
幅回路７で検出することにより、バイアス電源１からシ
リコン半導体検出器２で発生した電荷を補充するために
流れる電流を検出することができる。増幅回路７で検出
した信号を、ローパスフイルタ３を通すことにより、直
流成分をとり出し、コンパレータ10で、予め該設定器９
に設定された窒息検出電流の設定値と比較し、設定値以
上の電流になつた場合、窒息状態と判断して窒息検出信
号を出力回路11を介して外部出力し、測定者が誤つた計
測をしないようにする。In order to detect the above choking phenomenon, the bias power supply 1
The voltage drop across the load resistor 5 on the bias power supply side connected to the line that supplies the voltage to the silicon semiconductor detector 2 is detected by the amplifier circuit 7, and the charge generated in the silicon semiconductor detector 2 from the bias power supply 1 is detected. Can be detected. The signal detected by the amplifier circuit 7 is passed through the low-pass filter 3 to extract the direct current component, and the comparator 10 uses the setter 9 in advance.
When compared with the set value of the choking detection current set in, when the current exceeds the set value, it is judged as a choking state and the choking detection signal is externally output via the output circuit 11, and the measurement by the operator is incorrect. Try not to.
特に、電流検出の負荷抵抗３は、コンデンサ６と、バイ
アス電源１の間にある負荷抵抗で検出すめことが信号対
雑音比（S/N）の上で有利である。シリコン半導体検出
器１の場合、従来のGM計数管のように高電圧（約500〜1
000V）を印加する必要がなく、計＋Ｖの印加電圧でよ
く、直接バイアス電源側で極微弱な電流を直接検出でき
るものである。In particular, it is advantageous in terms of signal-to-noise ratio (S / N) that the load resistor 3 for current detection is detected by the load resistor between the capacitor 6 and the bias power source 1. In the case of the silicon semiconductor detector 1, a high voltage (about 500-1
It is not necessary to apply (000V), and a + V total applied voltage is sufficient, and an extremely weak current can be directly detected on the bias power supply side.
本実施例によれば、シリコン半導体検出器１を用いる放
射線計測装置において、高放射線下で生じる。計測系の
窒息現象に起因する計測値のみから上の低下による誤つ
た測定が生じない窒息検出を行なうことができる。According to the present embodiment, the radiation measuring apparatus using the silicon semiconductor detector 1 is generated under high radiation. It is possible to detect suffocation without erroneous measurement due to the above-mentioned decrease only from the measurement value caused by the suffocation phenomenon of the measurement system.
以上述べたように本発明によれば、放射線測定において
計測系の窒息現象を検出することができるので、誤つた
測定をすることがなく、かつ予定外被曝を防止すること
ができ、しかも被曝事故防止の効果があるとともに、原
子力プラントに用いた場合を運転においても誤つた測定
値を与えることがなく、運転信頼性の向上に効果があ
る。As described above, according to the present invention, it is possible to detect the choking phenomenon of the measurement system in the radiation measurement, so that it is possible to prevent erroneous measurement, prevent unscheduled radiation exposure, and further, to prevent radiation accidents. In addition to the effect of prevention, it does not give an erroneous measured value during operation when used in a nuclear power plant, and is effective in improving operation reliability.
図は本発明の実施例を示す回路図である。 １……バイアス電源、２……シリコン半導体検出器、５
……負荷抵抗、７……増幅回路、８……ローパスフイル
タ、９……窒息検出設定器、10……コンパレータ。The drawing is a circuit diagram showing an embodiment of the present invention. 1 ... Bias power supply, 2 ... Silicon semiconductor detector, 5
...... Load resistance, 7 ... Amplification circuit, 8 ... Low-pass filter, 9 ... Suffocation detection setting device, 10 ... Comparator.
Claims (1)
検出してパルスを出力するシリコン半導体検出器と、前
記シリコン半導体検出器から出力されたパルス信号を増
幅するパルス増幅器と、該パルス増幅器からのパルス信
号を処理し、放射線の強度に比例した指示を指示させる
線量率計装置とからなる放射線計測装置において、上記
バイアス電源の高圧側に接続される負荷抵抗の電圧降下
を検出する手段と、該手段から出力される信号の直流成
分を、予め設定してある窒息検出値と比較するコンパレ
ータとを設けてなることを特徴とするシリコン半導体検
出器を用いる放射線計測装置の窒息検出回路。1. A silicon semiconductor detector which is supplied with a current from a bias power source, detects radiation and outputs a pulse, a pulse amplifier which amplifies a pulse signal output from the silicon semiconductor detector, and a pulse amplifier from the pulse amplifier. In a radiation measuring device comprising a dose rate measuring device for processing a pulse signal and giving an instruction proportional to the intensity of radiation, a means for detecting a voltage drop of a load resistance connected to the high voltage side of the bias power source, A suffocation detection circuit of a radiation measuring apparatus using a silicon semiconductor detector, comprising: a comparator for comparing a DC component of a signal output from the means with a preset suffocation detection value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62070696A JPH0690292B2 (en) | 1987-03-25 | 1987-03-25 | Choking detection circuit of radiation measuring device using semiconductor detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62070696A JPH0690292B2 (en) | 1987-03-25 | 1987-03-25 | Choking detection circuit of radiation measuring device using semiconductor detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63236988A JPS63236988A (en) | 1988-10-03 |
| JPH0690292B2 true JPH0690292B2 (en) | 1994-11-14 |
Family
ID=13439049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62070696A Expired - Lifetime JPH0690292B2 (en) | 1987-03-25 | 1987-03-25 | Choking detection circuit of radiation measuring device using semiconductor detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690292B2 (en) |
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| US8971216B2 (en) | 1998-09-11 | 2015-03-03 | Alcatel Lucent | Method for routing transactions between internal and external partners in a communication center |
| US9002920B2 (en) | 1998-09-11 | 2015-04-07 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus for extended management of state and interaction of a remote knowledge worker from a contact center |
| US9008075B2 (en) | 2005-12-22 | 2015-04-14 | Genesys Telecommunications Laboratories, Inc. | System and methods for improving interaction routing performance |
| USRE45583E1 (en) | 1999-12-01 | 2015-06-23 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus for providing enhanced communication capability for mobile devices on a virtual private network |
| USRE46060E1 (en) | 1997-02-10 | 2016-07-05 | Genesys Telecommunications Laboratories, Inc. | In-band signaling for routing |
| USRE46153E1 (en) | 1998-09-11 | 2016-09-20 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus enabling voice-based management of state and interaction of a remote knowledge worker in a contact center environment |
| US9516171B2 (en) | 1997-02-10 | 2016-12-06 | Genesys Telecommunications Laboratories, Inc. | Personal desktop router |
| US9553755B2 (en) | 1998-02-17 | 2017-01-24 | Genesys Telecommunications Laboratories, Inc. | Method for implementing and executing communication center routing strategies represented in extensible markup language |
| USRE46528E1 (en) | 1997-11-14 | 2017-08-29 | Genesys Telecommunications Laboratories, Inc. | Implementation of call-center outbound dialing capability at a telephony network level |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004138472A (en) * | 2002-10-17 | 2004-05-13 | Mitsubishi Heavy Ind Ltd | Radiation detecting element, radiation detector, radiation ct device, and radiation inspection device |
| DE602007005501D1 (en) * | 2006-09-28 | 2010-05-06 | Philips Intellectual Property | SOLID LIGHT SOURCE WITH COLOR REFLECTION AND COMBINED COMMUNICATION AGENTS |
| JP6147068B2 (en) * | 2013-04-19 | 2017-06-14 | 三菱電機株式会社 | Dose rate measuring device |
-
1987
- 1987-03-25 JP JP62070696A patent/JPH0690292B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE46060E1 (en) | 1997-02-10 | 2016-07-05 | Genesys Telecommunications Laboratories, Inc. | In-band signaling for routing |
| US9516171B2 (en) | 1997-02-10 | 2016-12-06 | Genesys Telecommunications Laboratories, Inc. | Personal desktop router |
| USRE46243E1 (en) | 1997-02-10 | 2016-12-20 | Genesys Telecommunications Laboratories, Inc. | In-band signaling for routing |
| USRE46528E1 (en) | 1997-11-14 | 2017-08-29 | Genesys Telecommunications Laboratories, Inc. | Implementation of call-center outbound dialing capability at a telephony network level |
| US9553755B2 (en) | 1998-02-17 | 2017-01-24 | Genesys Telecommunications Laboratories, Inc. | Method for implementing and executing communication center routing strategies represented in extensible markup language |
| US8971216B2 (en) | 1998-09-11 | 2015-03-03 | Alcatel Lucent | Method for routing transactions between internal and external partners in a communication center |
| US9002920B2 (en) | 1998-09-11 | 2015-04-07 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus for extended management of state and interaction of a remote knowledge worker from a contact center |
| US9350808B2 (en) | 1998-09-11 | 2016-05-24 | Alcatel Lucent | Method for routing transactions between internal and external partners in a communication center |
| USRE46153E1 (en) | 1998-09-11 | 2016-09-20 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus enabling voice-based management of state and interaction of a remote knowledge worker in a contact center environment |
| USRE45583E1 (en) | 1999-12-01 | 2015-06-23 | Genesys Telecommunications Laboratories, Inc. | Method and apparatus for providing enhanced communication capability for mobile devices on a virtual private network |
| US9008075B2 (en) | 2005-12-22 | 2015-04-14 | Genesys Telecommunications Laboratories, Inc. | System and methods for improving interaction routing performance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63236988A (en) | 1988-10-03 |
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