JPH0685224A - Manufacture of color solid-state image sensing device - Google Patents

Abstract

PURPOSE:To manufacture a color solid-state image sensing device provided with a color filter wherein light which has not been transmitted through a dyeing pattern does not reach a photodetection part without executing a fixing treatment to the dyeing pattern. CONSTITUTION:A flat semiconductor layer 3 is formed over the whole surface on a semiconductor substrate 1 in which photodetection parts 2 have been formed on the surface, the flat layer 2 is coated with a base material for dyeing use, and a dyeing base layer 10 is formed. Then, the dyeing base layer 10 is partitioned and isolated so as to correspond to the photodetection parts 2, dyeing pattern bases 11 for every photodetection part 2 are formed, and a mixed-color preventing film 7 provided with opening parts in parts faced with the central part excluding the peripheral edge part of the dyening base layers 11 to be dyed is then formed on the whole surface on the individual dyeing pattern bases 11. After that, a dye in a prescribed color is permeated through the dyeing pattern bases 11, to be dyed, from the opening parts in the mixed-color preventing film. Thereby, a dyeing pattern 11 (M) is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a color solid-state image pickup device, and more particularly, to a color solid-state image sensor in which a color filter for color separation is directly formed as a single layer on a semiconductor substrate having a solid-state image pickup element formed thereon. The present invention relates to a method of manufacturing an image pickup device.

[0002]

2. Description of the Related Art As a method of colorizing a solid-state image pickup device, a separate type in which a color filter manufactured separately is attached to the light-receiving surface of the solid-state image pickup device, and a color filter is formed on the light-receiving surface of the solid-state image pickup device. Although an integrated method of directly forming the above is known, in recent years, the latter integrated method has become mainstream.

5 to 7 show a color solid-state image pickup device obtained by the latter integrated method, and FIG. 5 shows a sectional structure of a color solid-state image pickup device obtained by a first conventional manufacturing method. 6 shows a sectional structure of a color solid-state image pickup device obtained by the second conventional manufacturing method, and FIG. 7 shows a state in which the dye permeates through the opening of the color mixing prevention film in the first conventional manufacturing method.

The first conventional manufacturing method will be described below with reference to FIGS.

First, as shown in FIG. 5, after the semiconductor substrate flattening layer 3 made of a transparent resist is formed on the light receiving portion 2 formed on the surface of the semiconductor substrate 1, the semiconductor substrate flattening layer 3 is formed. .. are formed on the upper portion of the dyeing pattern bases 4, 4, ...

[0006] Next, as shown in FIG. 7, on the dyeing pattern bases 4, 4, ..., To the extent that other dyeing pattern bases 4 that are wider than and adjacent to the dyeing pattern base 4 to be dyed do not overlap. After forming the color mixing prevention film 7 having an opening of the size, the dye is permeated through the opening of the color mixing prevention film 7 into the dyeing pattern base 4 to be dyed to form the dyeing pattern 4 (M).

Next, after removing the color mixing prevention film 7 described above,
After forming the color mixing prevention film 7 having an opening at a portion corresponding to the dyeing pattern base 4 to be dyed next on the dyeing pattern bases 4, 4, ..., The dye is dyed from the opening of the color mixing prevention film 7. By repeating the step of permeating the target dyeing pattern base 4, the dyeing patterns 4 (M), 4 are formed on the semiconductor substrate flattening layer 3 as shown in FIG.
(Y), 4 (G), and 4 (C) are formed to realize a desired color filter.

Next, the dyeing pattern 4 in which the dyeing is completed
After forming the dyeing pattern flattening layer 5A on (M), 4 (Y), 4 (G), and 4 (C), the sensitivity of the solid-state imaging device is improved on the dyeing pattern flattening layer 5. Therefore, the microlens layer 6 is formed.

In the first conventional manufacturing method, since the color mixing prevention film 7 is used, the fixing process is not performed.

The second conventional manufacturing method will be described below with reference to FIG.

First, similarly to the first conventional manufacturing method, after the semiconductor substrate flattening layer 3 made of a transparent resist is formed on the light receiving portion 2 formed on the surface of the semiconductor substrate 1, the semiconductor substrate flattening layer 3 is formed. A dyed base film is formed over the entire surface of the chemical conversion layer 3.

Next, after patterning with a resist material on the dyeing base film, dyeing is permeated and dyeing is performed to form a dyeing pattern 4 '(M), and the dyeing pattern 4' (M) is formed. After the fixing process, the resist material is removed. After that, the dyeing patterns 4 ′ (M), 4 ′ (Y), 4 ′ are obtained by repeating the above process a plurality of times.
After forming (G) and 4 '(C), the dyeing pattern 4'
The protective transparent film 5B is formed on (M), 4 '(Y), 4' (G), and 4 '(C) to realize a desired color filter.

[0013]

However, according to the first conventional manufacturing method, an opening is provided over the region where the dyeing pattern base is not formed, and the dye is allowed to penetrate into the dyeing pattern base through the opening. Since it is a method,
In order to form a highly accurate opening in the color mixing prevention film, it is necessary to widen the width of the separation portion between the dyeing pattern bases, and the dyeing pattern base becomes small. Therefore, depending on the size of the dyeing pattern base, the incident light may be incident on the light receiving unit 2 outside the dyeing pattern 4 (Y) as shown by an arrow A in FIG. 5, and desired spectral characteristics can be obtained. However, the image quality may be adversely affected.

According to the second conventional manufacturing method, the dye base film formed over the entire surface of the semiconductor substrate flattening layer 3 is selectively dyed with a resist pattern, so that the dye is fixed. The problem that processing is required,
Also, even if the fixing process of the dye is insufficient, there is a problem that color mixing occurs between adjacent colors.

In view of the above, the present invention reliably provides a color solid-state image pickup device provided with a color filter that prevents light that does not pass through the dyeing pattern from reaching the light receiving portion without performing fixing processing on the dyeing pattern. It is an object to provide a method that can be manufactured.

[0016]

In order to achieve the above-mentioned object, the present invention, on each of the dyeing pattern bases formed by partitioning from each other, faces the central portion of the dyeing pattern bases excluding the peripheral portion. A color mixing prevention film having an opening in a portion is formed, and a dye permeates through the opening of the color mixing prevention film.

Specifically, the solving means taken by the present invention is a method for manufacturing a color solid-state image pickup device, in which a planarizing layer is formed over the entire surface of a semiconductor substrate having a light receiving portion formed on the surface thereof, Forming a dyeing base layer on the flattening layer by applying a dyeing base material on the flattening layer;
After forming the dyeing pattern base for each light receiving part by dividing the dyeing base layer corresponding to the light receiving part,
A color mixing prevention film having an opening is formed on each dyeing pattern base over a whole area, except for the peripheral portion of the dyeing pattern base to be dyed, and an opening is formed on the dyeing pattern base. The dyeing pattern is formed by permeating the dyeing pattern base to be dyed through the opening of the color mixing prevention film.

[0018]

With the above structure, a dyeing pattern is formed by performing dyeing on the dyeing pattern base partitioned and separated for each light receiving unit, so that adjacent dyeing patterns can be formed without fixing processing for the dyeing pattern. Color mixing does not occur.

Further, since dyeing is performed using a color mixing prevention film having an opening in a portion opposite to the central portion of the dyeing pattern base to be dyed, the dye is supplied through the opening of the color mixing prevention film. Since the dye does not penetrate into the adjacent dye pattern bases, the width dimension of the separation portion between the adjacent dye patterns can be made extremely small.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

1 and 2 show a method of manufacturing a color solid-state image pickup device according to an embodiment of the present invention.
(A)-(e) is sectional drawing which shows a manufacturing process, and FIG.
2A is a perspective view corresponding to FIG.
2B is an enlarged view of a one-dot chain line portion in FIG.

First, as shown in FIG. 1A, the light receiving section 2
A semiconductor substrate flattening layer 3 as a flattening layer made of a transparent polymer resin is formed on the semiconductor substrate 1 on which is formed, and then a dyeing base material is applied on the semiconductor substrate flattening layer 3. By doing so, the dyeing base layer 10 is formed on the semiconductor substrate flat layer 3.

Next, as shown in FIG. 1B, the dyeing base layer 10 is patterned into pixels to form dyeing pattern bases 11, 11, ... Separated from each other. In this case, the width of the separated portion between the dye pattern bases 11, 11, ... Is set to 1 μm or less.

Next, as shown in FIGS. 1 (c) and 2,
After forming the color mixing prevention film 12 having an opening 12a at a portion corresponding to the central portion of the dyeing pattern base 11 to be dyed, excluding the peripheral portion, on the dyeing pattern bases 11, 11 ,. B from the opening 12a of the color mixing prevention film 12 as a dyeing pattern base 1 to be dyed
No. 1 and the dye is diffused and adsorbed on the dye pattern base 11 to form a dye pattern 11 (M) dyed in a predetermined color.

Next, after the color mixing prevention film 12 is removed, the dyeing pattern bases 11, 11, ... Correspond to the central portion of the dyeing pattern base 11 to be dyed next, excluding the peripheral portion. After forming a color mixing prevention film (not shown) having an opening in a portion thereof, a predetermined dye is allowed to permeate through the opening of the color mixing prevention film into the dyeing pattern base 11 to be dyed next. By sequentially repeating the steps, as shown in FIG. 1D, the dyeing patterns 11 (G), 11 (C), 11 (Y) are formed, and the color filter is formed.

As described above, the opening 12 is formed in the portion corresponding to the central portion of the dyeing pattern base 11 excluding the peripheral portion.
Since dyeing is performed using the color mixing prevention film 12 having a, it is possible to completely prevent color mixing between adjacent dyeing pattern bases 11, and the color mixing prevention film 12 prevents the color mixing between the dyeing pattern bases 11 from each other. It also has a function as a protective film that protects the part (2), that is, the part between adjacent pixels.

Next, as shown in FIG. 1 (e), the dyeing patterns 11 (G), 11 (C), 11 (M), 11 (Y).
After the dyeing pattern flattening layer 5A is formed thereon, the dyeing pattern flattening layer 5A is formed in order to improve the sensitivity of the solid-state imaging device.
Each staining pattern 11 (G), 11 (C) on the
Microlens layer 6 corresponding to 11 (M) and 11 (Y)
To form.

In this embodiment, the color mixing prevention film 12 is used.
After removing the stains, the staining patterns 11 (G), 11
Although the dyeing pattern flattening layer 5A was formed on (C), 11 (M), and 11 (Y), instead of this, after the dyeing was completed, the color mixing prevention film 12 was not removed and the color mixing was performed. It is also possible to use the prevention film 12 as the dyeing pattern flattening layer 5A.

Further, in this embodiment, the color filter was formed without performing the fixing process on each of the dyeing patterns 11 (G), 11 (C), 11 (M), 11 (Y), but Of course, processing may be performed.

FIG. 3 shows a sectional structure of a solid-state image pickup device obtained by a manufacturing method according to an embodiment of the present invention, and FIG. 4 shows a sectional structure of a solid-state image pickup device obtained by a conventional manufacturing method. 3 and 4 both show a state in which light is incident on the color solid-state imaging device from the vertical direction.

Dyeing patterns 11 (M), 11 (Y), 11 obtained by the manufacturing method according to one embodiment of the present invention.
Since (G) has a larger area than the dyeing patterns 4 (M), 4 (Y), 4 (G) obtained by the conventional manufacturing method, the area above the light receiving portion 2 formed on the semiconductor substrate 1 is completely removed. Since the light can be prevented from leaking to the adjacent pixels as shown by the arrow A in FIG. 4 because it can be covered, since the dyeing pattern bases 11 separated from each other are used as the dyeing bases, the adjacent dyeing patterns 11 ( G), 11
Since it is possible to realize a color filter having no color mixture between (C), 11 (M), and 11 (Y), it is possible to improve image quality.

Further, even if the thickness of the color filter (the distance under the microlens) becomes thin and the CCD has a high pixel count and the focal length of the microlens becomes short, the thickness of the color filter can be set arbitrarily. Therefore, the light can be reliably focused on the light receiving portion, so that a color solid-state imaging device with improved sensitivity can be obtained.

[0033]

As described above, according to the method for manufacturing a color solid-state image pickup device of the present invention, after the dyeing base is formed by dividing the dyeing base into sections corresponding to the light receiving sections, Forming a color mixing prevention film on each dyeing pattern base having an opening at a portion opposite to the central portion of the dyeing pattern base to be dyed except for the peripheral portion, and dyeing the dye from the opening of the color mixing prevention film Since the dye penetrates into the pattern base, color mixing does not occur between adjacent dyeing patterns even if the fixing process is not performed on the dyeing patterns, and the dye supplied through the openings of the color mixing prevention film is applied to the adjacent dyeing pattern bases. Since it does not penetrate, the width dimension of the separation between adjacent dyeing patterns can be made extremely small, and light that does not pass through the dyeing pattern can be Possible to prevent reaching the light receiving portion.

Therefore, according to the present invention, a color solid-state image pickup device provided with a color filter that does not fix the dyed pattern and prevents light that does not pass through the dyed pattern from reaching the light receiving portion can be provided easily and easily. It can be reliably manufactured.

Therefore, it is possible to obtain a color solid-state image pickup device having excellent sensitivity even if the CCD has a higher number of pixels due to the thinning of the color filter and the focal length of the microlens becomes shorter.

[Brief description of drawings]

1A to 1E are cross-sectional views showing respective manufacturing steps of a method of manufacturing a color solid-state imaging device according to an embodiment of the present invention.

2A is a perspective view corresponding to FIG. 1C in the manufacturing process, and FIG. 2B is an enlarged view of a one-dot chain line portion in FIG.

FIG. 3 is a cross-sectional view showing a state in which light in the vertical direction is incident on a color solid-state imaging device obtained by a method for manufacturing a color solid-state imaging device according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a state in which light in the vertical direction is incident on a color solid-state imaging device obtained by a conventional method for manufacturing a color solid-state imaging device.

FIG. 5 is a sectional view of a color solid-state imaging device obtained by a first conventional manufacturing method.

FIG. 6 is a cross-sectional view of a color solid-state imaging device obtained by a second conventional manufacturing method.

FIG. 7 is a cross-sectional view showing a manufacturing process of the first conventional manufacturing method.

[Explanation of symbols]

 1 semiconductor substrate 2 light receiving part 3 semiconductor substrate flattening layer (flattening layer) 5 dyeing pattern flattening layer 6 microlens 10 dyeing base layer 11 dyeing pattern base 11 (M), 11 (Y), 11 (C), 11 (G) Dyeing pattern 12 Color mixing prevention film

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Akito Kidera 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Norihisa Kitamura 1006 Kadoma, Kadoma City, Osaka Matsushita Electronics Industrial Co., Ltd. (72) Inventor Katsumi Tomiya, 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Tadashi Aoki, 1006 Kadoma, Kadoma City, Osaka Matsushita Electronics Industrial Co., Ltd.

Claims (1)

[Claims] 1. A flattening layer is formed over the entire surface of a semiconductor substrate having a light receiving portion formed on its surface, and a dyeing base material is applied on the flattening layer to form the flattening layer. A dyeing base layer is formed on the dyeing base layer, and then the dyeing base layer is divided into sections corresponding to the light receiving sections to form a dyeing pattern base for each light receiving section, and then the entire dyeing pattern base is formed on each dyeing pattern base. Over, forming a color mixing prevention film having an opening in a portion facing the central portion excluding the peripheral portion of the dyeing pattern base to be dyed, and thereafter, a predetermined dye from the opening of the color mixing prevention film A method for manufacturing a color solid-state imaging device, which comprises forming a dyeing pattern by permeating a dyeing pattern base to be dyed.