JPH0677544A - Oxide superconducting device - Google Patents

Abstract

PURPOSE:To prevent characteristics deterioration and breakdown of an element, by constituting a substrate by using oxide non-superconductor having the same crystal structure as a superconducting element or structure similar to it. CONSTITUTION:A substrate 1 is constituted of oxide non-superconductor, and an oxide superconducting element 2 composed of oxide superconductor film is formed on the substrate 1. The super-conducting element 2 is constituted of oxide supercondutor composed of LnBa2Cu3Ot (where Ln is at least one element selected out of Y, La, Sm, Eu, Er, Gd, Nd, Dy, Ho, Lu, Yb and Tm, and 6.5<=t<=7) having 123 crystal structure. The substrate 1 is constituted of LmBa2Cu3Ou (where Lm is at least one element selected out of Pr and Ce and 6<=u<=8) oxide non-superconductor (high electric resistance) which contains lanthanoids and has the same 123 crystal structure as the oxide superconductor.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electromagnetic wave sensor composed of an oxide superconductor, a Josephson element such as SQUID, or an oxide superconducting device composed of superconducting wiring.

[0002]

La-Ba- having superconducting properties at high temperatures
Since the discovery of Cu-O-based high temperature oxide superconductors, researches using various oxide superconductors in superconducting devices such as electromagnetic wave sensors, Josephson elements used for SQUID, superconducting wiring, etc. have been actively conducted.

In an oxide superconducting device using this oxide superconductor, as a substrate, in addition to MgO as disclosed in Japanese Patent Laid-Open No. 3-79091 (H01L 39/22), SrTiO ₃ , ZrO ₂ , or An insulating material such as Al ₂ O ₃ which has a thermal expansion coefficient close to that of the oxide superconductor is selected.

[0004]

In order for a high temperature oxide superconducting device such as a Josephson element or a superconducting wiring to operate in a superconducting state, it is necessary to cool it to about the liquid nitrogen temperature or lower.

Even if a substrate made of the above-mentioned insulating material having a value close to the thermal expansion coefficient of the oxide superconductor constituting this element is selected, the operating temperature range of the oxide superconducting device is at least room temperature to the liquid nitrogen temperature. That is, since it has a width of about 200 ° C, the characteristics of the element may be deteriorated due to the distortion caused by the expansion and contraction difference between the element and the substrate, or the element may be cracked and destroyed and repeatedly used. However, there is a problem that the yield of various devices is deteriorated.

In order to solve this problem, the applicant of the present application has found that a substrate made of an oxide superconductor and a superconductor made of an oxide superconductor of the same crystal system as the substrate provided on the substrate via an insulating layer. An oxide superconducting device composed of an element is shown in Japanese Patent Application No. 3-269486. However, even in this device, since the substrate and the element have different thermal expansion coefficients from the insulating layer provided between them,
There was a fear that this device would be destroyed.

[0007]

The oxide superconducting device of the present invention comprises a (Lm _x Ln _1-x ) Ba ₂ Cu ₃ O _u oxide non-superconductor (where Lm is at least Pr or Ce). One selected element, Ln is Y, La, Sm, Eu,
Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm
At least one element selected from the above, the composition ratio x is 0.
5 <x ≦ 1) and LnBa having the same crystal structure as the oxide non-superconductor formed on the substrate.
And a superconducting element formed of a ₂ Cu ₃ O _t oxide superconductor.

Another oxide superconducting device of the present invention is a LpBa ₂ (Cu _3−q M _q ) O _u oxide non-superconductor (where Lp is Pr, Ce, Y, La, Sm, Eu). , E
At least one element selected from r, Gd, Nd, Dy, Ho, Lu, Yb, or Tm, M is Zn, Fe,
A substrate made of at least one element selected from Co, Ni, Sb, Pb, Nb, Ta, Al, Ga, or In) and the same or similar to the oxide non-superconductor formed on the substrate. Having the crystal structure of LnBa ₂ Cu ₃ O
_t (where Ln is Y, La, Sm, Eu, Er, G
and a superconducting element composed of an oxide superconductor (an element selected from at least one of d, Nd, Dy, Ho, Lu, Yb, and Tm).

In particular, it is characterized in that it is composed of a groove for embedding a superconducting element provided on the surface of the substrate and the superconductor element embedded in the groove.

Yet another oxide superconducting device of the present invention is a LnBa ₂ Cu ₃ O _t oxide superconductor (where
Is Y, La, Sm, Eu, Er, Gd, Nd, Dy, H
a substrate made of at least one element selected from among o, Lu, Yb, and Tm) and the same crystal structure as the oxide superconductor formed on the substrate (Lm _x Ln _1
-x ) Ba ₂ Cu ₃ O _u oxide non-superconductor (wherein Lm is at least one element selected from Pr or Ce,
A superconducting element comprising a thin film having a composition ratio x of 0.5 <x ≦ 1) and an oxide superconductor LnBa ₂ Cu ₃ O _t having the same crystal structure as the oxide superconductor formed on the thin film. It is characterized by being composed of and.

Yet another oxide superconducting device of the present invention is a LnBa ₂ Cu ₃ O _t oxide superconductor (where
Is Y, La, Sm, Eu, Er, Gd, Nd, Dy, H
a substrate composed of at least one element selected from among o, Lu, Yb, and Tm), and Lp having the same or similar crystal structure as the oxide superconductor formed on the substrate.
Ba ₂ (Cu _3−q M _q ) O _u oxide non-superconductor (where L
p is Pr, Ce, Y, La, Sm, Eu, Er, Gd,
At least one element selected from Nd, Dy, Ho, Lu, Yb, or Tm, and M is Zn, Fe, Co, N
a thin film made of at least one element selected from i, Sb, Pb, Nb, Ta, Al, Ga, or In) and the same crystal structure as the oxide superconductor formed on the thin film. And a superconducting element made of an LnBa ₂ Cu ₃ O _t oxide superconductor.

[0012]

As described above, when the substrate is made of an oxide non-superconductor having the same or similar crystal structure as that of the superconducting element, the lattice constant and the thermal expansion coefficient of these are at least the use of the oxide superconductor device. Since they are close to or equal to each other in the temperature range and the temperature range at the time of manufacturing, it is possible to prevent the characteristics of the element from being deteriorated or the element from being cracked and broken.

In particular, when the superconducting element is embedded in the substrate, the surface of the substrate and the surface of the element can be flush with each other, so that highly reliable electrodes and circuits can be easily formed.

When the substrate made of oxide superconductor, the thin film made of oxide non-superconductor, and the device made of oxide superconductor have the same or similar crystal structure, the coefficient of thermal expansion of these is at least used. Since the values are close to or equal to each other in the temperature range and the temperature range at the time of manufacturing, it is possible to prevent the thin film from being broken, deterioration of characteristics of the element or destruction, and to cool the superconducting element efficiently.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment will be described in detail with reference to the drawings. FIG. 1 is an example of an oxide superconducting device of the present invention and shows a perspective view of a granular electromagnetic wave sensor which is a Josephson element.

In the figure, 1 is a substrate made of a non-oxide superconductor having a thickness of, for example, several hundreds of μm, preferably 100 to 500 μm,
Reference numeral 2 is an oxide superconducting element formed of an oxide superconducting film formed on the surface of the substrate 1. This oxide superconducting element 2
Functions as an electromagnetic wave sensor by narrowing the width of the central portion, for example, width 50 μm, length 200 to 300 μm, thickness 50
A sensor part 3 having a size of about μm, and input / output electrodes (inside) 5a and 5a made of gold or the like having a thickness of about 0.2 to 1 μm at both ends 4 and 4, a bias current electrode (outside). 5b and 5b are respectively configured.

This superconducting element 2 is composed of LnBa ₂ Cu ₃ O _t (where Ln is Y, La, S) having a 123 crystal structure.
m, Eu, Er, Gd, Nd, Dy, Ho, Lu, Y
b, or at least one element selected from Tm, t
Is an oxide superconductor consisting of 6.5 ≦ t ≦ 7).

On the substrate 1, Lm containing a lanthanoid group element having the same 123 crystal structure as the oxide superconductor.
Ba ₂ Cu ₃ O _u (where Lm is at least one element selected from Pr or Ce and u is 6 ≦ u ≦ 8) and is composed of an oxide non-superconductor (high electrical resistance).

Here, FIG. 2 shows the lattice constants of the oxide superconductor and the oxide non-superconductor on the a-axis, the b-axis, and the c-axis for each lanthanoid element. In addition, here, the case where Ln and Lm consist of one kind of lanthanoid element is shown.

From this figure, it is confirmed that the oxide superconductor and the oxide non-superconductor have similar lattice constants, and further, Ln or Lm.
It can be seen that the lattice constants of the oxide superconductor and the oxide non-superconductor are close to each other even when is composed of plural kinds of lanthanoid elements.

This oxide superconducting element 2 is, for example, a substrate 1.
In addition to being formed using a sputtering method or a molecular beam epitaxial method (MBE method) with a mask interposed therebetween, it is also formed using a screen printing method.

[0022]斯Ru oxide superconducting devices, because it uses an oxide non-superconducting LmBa ₂ Cu ₃ O _u having the same 123 crystal structure as the oxide superconductor LnBa ₂ Cu ₃ O _t of the substrate 1, the substrate 1 The superconducting element 2 has a close lattice constant and a close thermal expansion coefficient. Furthermore, since the oxide non-superconductor has a high electric resistance, it is not necessary to provide an insulating layer on the substrate 1.
As a result, in the operating temperature range of the oxide superconductor device and the temperature range at the time of manufacturing, the characteristics of the element are deteriorated,
Further, it is possible to prevent the element from being cracked and broken.

Further, since the substrate 1 has the same crystal structure as the superconducting element 2, the substrate 1 is sputtered,
The superconducting element 2 formed by the MBE method has good crystallinity. Therefore, the characteristics of the oxide superconducting device are improved as compared with those using the conventional substrate.

By the way, the substrate 1 has the above-mentioned 1
(Lm _x Ln _1-x ) B of 123 crystal structure in which a part of Ln of the oxide superconductor of 23 crystal structure is replaced with Pr or Ce.
The use of a ₂ Cu ₃ O _u (0.5 <x <1) oxide non-superconductor (high electrical resistance) is also effective.

In FIG. 3, as an example, the (P
r _x Y _1-x ) Ba ₂ Cu ₃ O _{u with} the composition ratio x and the a-axis, b-axis,
And the lattice constant (Å) in the c-axis direction. From this figure, it is understood that the lattice constant in each axial direction can be changed by changing the composition ratio x.

As can be seen from FIGS. 2 and 3, (Pr
_x Y _1-x ) Ba ₂ Cu ₃ O _u is a non-superconductor 0.5 <x
When selected to a desired value within the range of <1, the lattice constant of such an oxide non-superconductor is such that Ln is Gd, Eu, Sm,
Nd or La oxide superconductor LnBa ₂ Cu ₃ O
_It can be approximately equal to or close to the lattice constant of _t , and the thermal expansion coefficient is also close. Therefore, the destruction of the oxide superconducting device and the deterioration of the element characteristics can be prevented more than the case of using the LmBa ₂ Cu ₃ O _u substrate.

When a superconducting element made of an oxide superconductor LnBa ₂ Cu ₃ in which Ln is Y, Dy, Er, or Ho is used, (P
_{r x Yb 1-x) Ba} 2 Cu 3 O u (0.5 < When using a substrate made of x <1), because the lattice constant can be substantially equal or close, is particularly effective.

Also in this case, since the substrate 1 has the same crystal structure as the superconducting element 2, the superconducting element 2 formed on this substrate by the sputtering method or the MBE method has good crystallinity. Therefore, the characteristics of the oxide superconducting device are improved.

Next, the oxide superconducting device of the second embodiment for forming the oxide superconducting device without using the thin film forming technique will be described with reference to FIG. The same parts and corresponding parts as those in the first embodiment are designated by the same reference numerals and the description thereof will be omitted.

In the figure, 1 is a substrate made of a non-oxide superconductor having a thickness of, for example, several hundred μm, preferably 100 to 500 μm,
21 is an L having a 123 crystal structure embedded in the substrate 1.
nBa ₂ Cu ₃ O _t (where Ln = Y, La, Sm, E
u, Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm) is used as the main constituent element of the oxide superconductor, and the constituent superconducting particles have an interface at the interface of the element. This is a superconducting element in which a high resistance material such as Ba ₂ YBiO ₆ for increasing the normal conducting resistance to improve the element characteristics is interposed.

At both ends 4 and 4 of the sensor unit 3, input / output electrodes (inside) 5a and 5a made of gold or the like having a thickness of about 0.2 to 1 μm, and bias current electrodes (outside) 5b and 5b are formed.
b are respectively configured.

Such an oxide superconducting device is manufactured as follows.

First, as shown in FIG. 5A, a superconducting element embedding groove 22 having a shape corresponding to the superconducting element is formed on the substrate 1 by using an ultrasonic processing machine. This groove 22
Is formed on the surface of the substrate 1 to have a depth of 10 to 200 μm, for example, and has a width of 50 μm, a length of 200 to 300 μm, and a depth of 50 μm corresponding to the electromagnetic wave sensor unit 3 in the central portion 22a.
It has a narrowed portion of about the size.

Next, a sintered body of an oxide superconductor made of, for example, YBa ₂ Cu ₃ O _t is prepared by a conventionally known coprecipitation method and firing of the product.

That is, for example, yttrium nitrate Y (N
O ₃ ) ₃ · 3.5H ₂ O, barium nitrate Ba (NO ₃ ) ₂ ,
Copper nitrate Cu (NO ₃ ) ₂ .2H ₂ O is dissolved in water and mixed so that Y, Ba, and Cu have a molar ratio of 1: 2: 3. Next, 7 mol of an aqueous solution of oxalic acid H ₂ C ₂ O ₄ .2H ₂ O is added to 2 mol of Ba element to react them. At this time, ammonia water NH ₄ OH was added dropwise to adjust the pH.
H = 4 to 7, specifically pH = 4.6, and Y, Ba,
The composition ratio of Cu is set to 1: 2: 3. The precipitate generated by this reaction is filtered and then sufficiently dried to obtain a superconducting element powder. The powder thus obtained is
As the next firing, firing is performed at 830 to 880 ° C. for 9 hours in the air. In this example, it was baked at 870 ° C. for 9 hours. The fired powder particles are formed into a compact of about 15 mm × 15 mm × 1 mm at a pressure of about 2 ton / cm ² . Then, as a secondary firing, this molded body was YBa ₂ C
The oxide superconductor (superconducting phase ratio) made of YBa ₂ Cu ₃ O _{t is} fired at 900 to 1000 ° C. where the crystal grains of u ₃ O _t grow, in this embodiment, for example, at a temperature of 925 ° C. for 8 hours in an oxygen atmosphere. 98%) to obtain a sintered body.

Subsequently, the sintered body was ground in a mortar to form a powder, and powdered Bi ₂ O ₃ having a particle size of 1 μm or less (15 wt% or less based on the total amount) was added to the powdered sintered body. (Mixing ratio) is added and further ground in a mortar to uniformly mix to prepare a mixed powder having a particle size of about 1 to 3 μm.

Next, FIG. 5 which is a longitudinal sectional view of the substrate.
As shown in (b), the mixed powder is loaded in the groove 22 for embedding the superconducting element, and then the mixed powder is pressed.

After that, in an electric furnace, the substrate 1 loaded with the mixed powder is placed on the particles spread over the particles of zirconia having a diameter of 1 mm and placed in an oxygen atmosphere, for example, from room temperature to 900 to 940 ° C. Heat up in 3 hours,
After holding at that temperature for about 3 to 48 hours, about 100 ° C / h
Gradually cool to room temperature with r. By this process, B in the compact is
Since the i ₂ O ₃ particles are melted to form a bismuth oxide melt, the oxide superconductor particles made of YBa ₂ Cu ₃ O _t are immersed in the bismuth oxide solution, and then cooled to cool the particles of the oxide superconductor. Superconductor 25 in which an interface layer made of a high resistance material such as Ba ₂ YBiO ₆ oxide is formed at the interface
Is created.

Next, at least the superconductor 25 rising from the embedding groove 22 is removed by polishing so that the surface of the substrate 1 and the surface of the superconductor are flush with each other.
The superconducting element 21 shown in FIG. 4 is formed by removing up to the position of the broken line ZZ in (b). After that, the input / output electrodes 5a and 5a and the bias current electrodes 5b and 5b are formed by a vapor deposition method, a sputtering method, or the like.

Also in the oxide superconducting device of this example, the non-oxide superconductor LmBa ₂ Cu ₃ O _u having the same 123 crystal structure as that of the oxide superconductor LnBa ₂ Cu ₃ O _{t on} the substrate 1 or the 123 crystal described above. (Lm _x Ln _1-x ) Ba ₂ Cu ₃ O _u (where x is 0.5 is obtained by substituting at least one element of Pr or Ce for part of Ln of the oxide superconductor having the structure.
<X <1) Since the oxide non-superconductor is used, it is possible to prevent the oxide superconducting device from being destroyed or the characteristics from being deteriorated as in the first embodiment.

Further, with such a structure, it is not necessary to process it into the shape of the superconducting element, so that the yield and characteristics of the superconducting device can be prevented from being deteriorated.

Further, in such an oxide superconducting device, since the surface of the superconducting element 21 and the surface of the substrate 1 can be flush with each other, the vapor deposition method,
As shown in FIG. 6 which is a top view, an antenna 31, a matching circuit 32, a power supply ripple filter 33, a bias current electrode 34, and a bias current electrode 34 are formed by a film forming technique such as a sputtering method. 34, the input / output electrode 35 and the like can be formed with high accuracy and easily, and peeling and the like can be prevented.

Although Ce or Pr was used as the element constituting the oxide non-superconductor in each of the above examples, Tb
Can also be used.

Further, LpBa ₂ (Cu _3−q M _q ) O _u (where Lp has a 123 crystal structure (or 1212 structure) is used.
Is Pr, Ce, Y, La, Sm, Eu, Er, Gd, N
At least one element selected from d, Dy, Ho, Lu, Yb, or Tm, M is Zn, Fe, Co, Ni, S
b, Pb, Nb, Ta, Al, Ga, or at least one element selected from In, 0.5 <q ≦ 1, and the closer the composition ratio q is to 1, the closer to the 1212 crystal structure) Oxidation Using a substrate made of non-superconductor (high electrical resistance)
Since the crystal structure is the same as (or similar to) the oxide superconducting element and the lattice constant and the thermal expansion coefficient are close to each other, it is possible to prevent deterioration or destruction of element characteristics. Furthermore, LpBa ₂ (Cu
_3-q M _q) O _u is larger electric resistance than that of the oxide non-superconductor mentioned above, the current from the superconducting element to the substrate can be further suppressed from leaking, more desirable.

By the way, in the first and second embodiments, since the substrate made of the oxide non-superconductor having the same crystal structure as that of the oxide superconducting device is used, it is possible to prevent the characteristic deterioration and the destruction of the superconducting device. However, there is a problem that the thermal conductivity is not sufficient and the cooling efficiency of the oxide superconducting element is poor.

Next, a third embodiment which solves the problem of the element cooling efficiency will be described with reference to the sectional view of FIG.
The difference from the first and second embodiments is that a substrate made of an oxide superconductor having an oxide non-superconductor thin film formed on the surface is used as the substrate. Corresponding parts will be assigned the same reference numerals and explanations thereof will be omitted.

In the figure, 41 is YBa ₂ C having a 123 crystal structure.
A substrate composed of a u ₃ O _t oxide superconductor and having a thickness of, for example, several hundreds of μm, preferably 100 to 500 μm.
PrBa ₂ having a film thickness of 20 μm having a 1212 crystal structure which is a crystal structure similar to the 123 crystal structure formed above
(Cu ₂ Ga) O _u oxide non-superconductor thin film (insulating layer), 2
123 formed on the oxide non-superconductor thin film 42
The oxide superconducting element comprises a YBa ₂ Cu ₃ O _t oxide superconducting film having a crystalline structure.

An example of a method for producing such an oxide superconductor sensor will be shown.

First, a sol-like solution obtained by dissolving an oxide non-superconductor having a particle size of 2 to 3 μm and a binder in an organic solvent is applied on the oxide superconductor substrate 41 by a screen printing method, and then at about 100 ° C. After the organic solvent is removed by holding at the temperature for several hours to remove the organic solvent, the binder is removed at a temperature of 400 ° C., for example, for 1 hour to 5 hours to form the oxide non-superconductor thin film 42. In this embodiment, polyvinyl chloride (5 to 10 wt% with respect to the oxide non-superconductor) is used as the binder, and cyclohexanone, toluene, and methyl ethyl ketone are mixed in a volume ratio of 2: 1: 1 as an organic solvent. (2 for oxide non-superconductors
100-300 wt%) was used. The thin film 42 may be formed by a thin film forming method such as a sputtering method, but it is preferable to use a screen printing method because the generation of pinholes can be suppressed.

Next, the oxide superconducting element 2 previously formed on the oxide non-superconducting thin film 42 is fixed by an insulating grease having good thermal conductivity, for example, piezo type grease, to form the sensor shown in FIG. To do. The oxide superconducting element 2 may be formed on the oxide non-superconductor thin film 42 by a thin film forming method such as a sputtering method or a screen printing method.

In such an oxide superconducting sensor, the oxide superconducting substrate 41 and the oxide superconducting element 2 have the same crystal structure, and the oxide non-superconducting thin film 42 has a crystal structure similar to that of the substrate 41 and the element 2. Since the thin film 42 is provided, there is no fear of destruction as compared with the case where the thin film 42 is made of a conventional material such as MgO, and it is possible to prevent characteristic deterioration and destruction of the element 2. Further, as a substrate, an oxide superconductor substrate 41 having excellent thermal conductivity is provided.
In addition, since the oxide non-superconductor thin film 42 having a lower thermal conductivity than that of the oxide superconductor can be thinned, the oxide superconductor element 2 can be efficiently cooled.

By the way, the oxide non-superconductor thin film 42 is formed of (Lm _x Ln _1-x ) Ba ₂ Cu ₃ O _u or LpBa ₂ (Cu).
_3-q M q) O _u oxide of a non-superconductor and oxide superconductor substrate 41, an oxide superconducting element 2 LnBa ₂ Cu ₃
When the _Ot oxide superconductor is used, the same effect as described above can be obtained.

Although the granular type electromagnetic wave sensor is shown in the first to third embodiments, it is needless to say that other superconducting elements have the same effect.

[0054]

Since the oxide superconducting device of the present invention uses the substrate made of the oxide non-superconductor having the same or similar crystal structure as the superconducting element, the thermal expansion coefficient is at least the operating temperature range and the temperature at the time of manufacturing. Since the values are close or equal in the range, it is possible to prevent deterioration and destruction of characteristics of the superconductor element,
The yield of oxide superconducting devices that can be used repeatedly can be improved.

In another oxide superconducting device of the present invention, the substrate made of an oxide superconductor, the thin film made of a non-oxide superconductor, and the superconducting element made of an oxide superconductor have the same or similar crystal structure. Since these thermal expansion coefficients are close to or equal to each other in at least the operating temperature range and the temperature range at the time of manufacturing, this thin film may be destroyed,
It is possible to prevent the deterioration and destruction of the characteristics of the element and improve the yield of the oxide superconducting device that can be repeatedly used. Also,
Since a substrate made of an oxide superconductor having excellent thermal conductivity is used as the substrate, and the oxide non-superconductor thin film having poor thermal conductivity as compared with the oxide superconductor can reduce the film thickness, the superconductor The element can be cooled efficiently.

[Brief description of drawings]

FIG. 1 is a perspective view of an oxide superconducting device according to an embodiment of the present invention.

FIG. 2 is a diagram showing lattice constants of an oxide superconductor and an oxide non-superconductor according to the above-mentioned embodiment.

FIG. 3 shows (Pr _x Y _1-x ) Ba ₂ Cu ₃ O according to the above embodiment.
It is a figure which shows the relationship between the lattice constant of _u , and composition ratio x.

FIG. 4 is a perspective view of an oxide superconducting device of another example according to the present invention.

FIG. 5 is a process drawing of an oxide superconducting device of another example.

FIG. 6 is a top view of an oxide superconducting device according to another embodiment.

FIG. 7 is a cross-sectional view of an oxide superconducting device of still another embodiment according to the present invention.

[Explanation of symbols]

 1 Oxide Non-Superconductor Substrate 2 Superconducting Element 21 Superconducting Element 22 Superconducting Element Embedding Groove 41 Oxide Superconducting Substrate 42 Oxide Non-Superconducting Thin Film

Front Page Continuation (72) Inventor Junnobu Zenzato 2-18, Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd.

Claims (5)

[Claims] 1. A non-superconductor of (Lm _x Ln _1-x ) Ba ₂ Cu ₃ O _u oxide (where Lm is an element selected from at least one of Pr and Ce, and Ln is Y, La and Sm). , E
A substrate formed of at least one element selected from u, Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm, and a composition ratio x of 0.5 <x ≦ 1), and formed on the substrate Having the same crystal structure as the aforesaid oxide non-superconductor
A superconducting element composed of a Ba ₂ Cu ₃ O _t oxide superconductor;
An oxide superconducting device comprising: 2. LpBa ₂ (Cu _3-q M _q ) O _u oxide non-superconductor (where Lp is Pr, Ce, Y, La, Sm,
At least one element selected from Eu, Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm, and M is Z
n, Fe, Co, Ni, Sb, Pb, Nb, Ta, A
a substrate made of at least one element selected from l, Ga, and In), and LnB having the same or similar crystal structure as the oxide non-superconductor formed on the substrate.
a ₂ Cu ₃ O _t (where Ln is Y, La, Sm, E
an element selected from at least one of u, Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm) and a superconducting element made of an oxide superconductor. device. 3. The superconducting element embedding groove provided on the surface of the substrate, and the superconducting element embedded in the groove, and the superconducting element embedding groove. Oxide superconducting device. 4. A LnBa ₂ Cu ₃ O _t oxide superconductor (where Ln is Y, La, Sm, Eu, Er, Gd, N.
a substrate made of at least one element selected from d, Dy, Ho, Lu, Yb, and Tm) and the same crystal structure as the oxide superconductor formed on the substrate (Lm _x Ln _1-x ) Ba ₂ Cu ₃ O _u oxide non-superconductor (where Lm is at least one element selected from Pr or Ce, and composition ratio x is 0.5 <x ≦ 1) And a superconducting element made of an oxide superconductor LnBa ₂ Cu ₃ O _t having the same crystal structure as that of the oxide superconductor formed on the thin film, the oxide superconducting device. 5. A LnBa ₂ Cu ₃ O _t oxide superconductor (where Ln is Y, La, Sm, Eu, Er, Gd, N.
a substrate made of at least one element selected from d, Dy, Ho, Lu, Yb, or Tm), and LpBa ₂ having the same or similar crystal structure as the oxide superconductor formed on the substrate. (Cu _3−q M _q ) O _u oxide non-superconductor (where Lp is Pr, Ce, Y, La, Sm, E
At least one element selected from u, Er, Gd, Nd, Dy, Ho, Lu, Yb, or Tm, M is Zn,
Fe, Co, Ni, Sb, Pb, Nb, Ta, Al, G
a or at least one element selected from In) and a LnBa ₂ Cu ₃ O _t oxide superconductor having the same crystal structure as the oxide superconductor formed on the thin film. An oxide superconducting device comprising a superconducting element.