JPH0677380A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPH0677380A
JPH0677380A JP4226078A JP22607892A JPH0677380A JP H0677380 A JPH0677380 A JP H0677380A JP 4226078 A JP4226078 A JP 4226078A JP 22607892 A JP22607892 A JP 22607892A JP H0677380 A JPH0677380 A JP H0677380A
Authority
JP
Japan
Prior art keywords
resin
lead
semiconductor device
protrusion
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4226078A
Other languages
Japanese (ja)
Inventor
Hisamitsu Ishikawa
川 寿 光 石
Mitsuru Kataoka
岡 満 片
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4226078A priority Critical patent/JPH0677380A/en
Publication of JPH0677380A publication Critical patent/JPH0677380A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PURPOSE:To prevent invasion of moisture through lead by preventing removal of the lead. CONSTITUTION:A protrusion 10 is provided in a resin-sealed part of a lead 2 to be arranged near a periphery of a tie bar and/or an element placing part 1 for supporting the placing part 1 to be placed with a semiconductor element 6. Thus, a contact area of the resin with the lead 2 is increased by the protrusion to suppress removal of the lead and to scarcely invade moisture, thereby enhancing reliability.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置に
係り、特に防湿性が高く、かつ堅牢な樹脂封止型半導体
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a resin-encapsulated semiconductor device having high moisture resistance and robustness.

【0002】[0002]

【従来の技術】図5は従来のDIP(Dual Inline Pack
age)タイプの樹脂封止型半導体装置に用いられるリード
フレームの上面図、また図6は図5に示すリードフレー
ムの素子搭載部(以下ベッドという)1に半導体チップ
6を搭載した様子を示す上面図である。
2. Description of the Related Art FIG. 5 shows a conventional DIP (Dual Inline Pack).
FIG. 6 is a top view of a lead frame used in an age) type resin-sealed semiconductor device, and FIG. 6 is a top view showing a state in which a semiconductor chip 6 is mounted on an element mounting portion (hereinafter referred to as a bed) 1 of the lead frame shown in FIG. It is a figure.

【0003】半導体チップ6上のボンディングパッド7
と、リード2とをワイヤ8で接続されている状態を示し
ている。このようなリードフレームでは半導体チップ6
を配置するためのベッド1がタイバー(いわゆる吊りピ
ン)4により支持された構造を有しており、ベッド1の
近傍にはリード2の一端が近接して配設されている。
Bonding pad 7 on semiconductor chip 6
And the lead 2 are connected by the wire 8. In such a lead frame, the semiconductor chip 6
1 has a structure in which a tie bar (a so-called hanging pin) 4 is supported for arranging the beds 1. One end of a lead 2 is arranged near the bed 1 in the vicinity thereof.

【0004】図5および図6に点線で囲まれた部分は、
樹脂により封止される箇所である。樹脂内に封止された
リード(以下インナリードという)2の一部およびタイ
バー4の一部には穴状のアンカーホール3が設けられて
いる。このアンカーホール3はリード2が引き抜けてし
まうのを防止するために設けられるもので、リード2の
形状を得るために必要な機械加工時に形成される。
The part surrounded by a dotted line in FIGS. 5 and 6 is
It is a part sealed with resin. A hole-shaped anchor hole 3 is provided in a part of a lead (hereinafter referred to as an inner lead) 2 and a part of a tie bar 4 which are sealed in a resin. The anchor hole 3 is provided to prevent the lead 2 from pulling out, and is formed at the time of machining necessary to obtain the shape of the lead 2.

【0005】図7は図6に示すリードフレームを樹脂封
止した場合のA−A′部分での断面構造図を示したもの
である。半導体チップ6はベッド1に導電性接着剤など
のペースト9により接着されている。
FIG. 7 is a sectional structural view taken along the line AA 'when the lead frame shown in FIG. 6 is resin-sealed. The semiconductor chip 6 is bonded to the bed 1 with a paste 9 such as a conductive adhesive.

【0006】また図8は図7においてAとして示される
アンカーホール3の近傍の拡大図を示したものである。
FIG. 8 is an enlarged view of the vicinity of the anchor hole 3 shown as A in FIG.

【0007】同図に示すようにインナリードの一部が円
形または角状に打ち抜かれてホールが形成されている。
この部分に封止時に樹脂が充填されるため、リード2の
引き抜けを防止することができる。
As shown in the figure, a part of the inner lead is punched out in a circular or square shape to form a hole.
Since this portion is filled with resin at the time of sealing, it is possible to prevent the lead 2 from pulling out.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上述し
た従来の樹脂封止型半導体装置におけるリードフレーム
を用いて、近年大型化した半導体チップを従来と同寸法
のリードフレームに封止した場合、インナリードがリー
ド形成時の機械加工により引き抜けてしまう問題が依然
として発生している。この引き抜けには3種類の抜け方
があり、 インナリードのみが引き抜けてしまう場合。 インナリードが樹脂とともに引き抜けてしまう場
合。 アンカーホール部よりリードが破断し引き抜ける場
合。 がある。
However, when a lead frame in the conventional resin-encapsulated semiconductor device described above is used to seal a semiconductor chip, which has recently become large in size, in a lead frame of the same size as the conventional one, the inner lead However, there is still a problem that the lead is pulled out by the mechanical processing at the time of forming the lead. There are three ways to pull out, and only the inner lead pulls out. When the inner lead pulls out together with the resin. When the lead breaks from the anchor hole and pulls out. There is.

【0009】また、外界からの水分の侵入は、リードお
よび吊りピンからの侵入がもっとも多く、特にリードか
らの侵入はリードとチップがワイヤにより接続されてい
るためチップ表面への水分到達経路の一番の要因となっ
ている。特に樹脂封止後のアウタリードの機械加工時に
リードには少なからず引き抜き力がかかるため、インナ
リードと樹脂の密着性が劣化することも水分の侵入を容
易にしている。
The most invasion of moisture from the outside is through the leads and the hanging pins, and in particular, the invasion from the leads is one of the routes for moisture to reach the chip surface because the lead and the chip are connected by a wire. It has become a factor. Particularly, when the outer leads after resin encapsulation are machined, a considerable amount of pulling force is applied to the leads, which deteriorates the adhesion between the inner leads and the resin, which also facilitates the infiltration of water.

【0010】水分がチップ表面に到達すると、チップの
金属配線が腐食され抵抗が増大し機能不良を発生させ
る。また腐食が激しい場合には金属配線が完全に腐食
し、断線状態となってしまう。
When the moisture reaches the surface of the chip, the metal wiring of the chip is corroded to increase the resistance and cause a malfunction. In addition, when the corrosion is severe, the metal wiring is completely corroded, resulting in disconnection.

【0011】このように従来の樹脂封止型半導体装置で
はインナリードが抜けてしまう問題点とインナリードを
介して水分が外部から侵入して素子不良を発生させると
いう問題点とがあり、信頼性の確保が十分ではなかっ
た。
As described above, in the conventional resin-encapsulated semiconductor device, there is a problem that the inner leads come off and a problem that moisture penetrates from the outside through the inner leads to cause a defective element, and thus reliability is improved. Was not enough.

【0012】本発明は上述した2つの問題点を解決する
ためになされたもので、水分侵入を防止するとともにイ
ンナリードが封止樹脂内から引き抜けることを防止でき
る極めて信頼性の高い樹脂封止型半導体装置を提供する
ことを目的とする。
The present invention has been made in order to solve the above-mentioned two problems, and is an extremely highly reliable resin-sealed type that can prevent the intrusion of water and prevent the inner leads from being pulled out from the sealing resin. An object is to provide a semiconductor device.

【0013】[0013]

【課題を解決するための手段】本発明は半導体素子を搭
載する素子搭載部と、一端がこの素子搭載部の一部に一
体化して接続され、他端が封止樹脂内の外方へ延在する
タイバーと、一端が前記素子搭載部の周辺近傍に配設さ
れ他端が封止樹脂外へ延在する複数のリードとを備えた
樹脂封止型半導体装置において、前記タイバーおよび/
または複数のリードの樹脂封止された部分の一部に突起
を設けたものである。
According to the present invention, an element mounting portion on which a semiconductor element is mounted is integrally connected to one end of the element mounting portion, and the other end extends outward in a sealing resin. In the resin-encapsulated semiconductor device, the existing tie bar and a plurality of leads, one end of which is arranged in the vicinity of the periphery of the element mounting portion and the other end of which extends outside the encapsulation resin, are provided.
Alternatively, a protrusion is provided on a part of the resin-sealed portion of the plurality of leads.

【0014】なお、前記突起はアンカーホールの一辺を
残して折り曲げて形成するのが好ましい。
The protrusions are preferably formed by bending with one side of the anchor hole left.

【0015】[0015]

【作用】本発明ではインナリードおよび/またはタイバ
ーの一部に突起を設けたことにより、水分の侵入と引き
抜けの防止とを同時に実現することができる。
In the present invention, by providing a projection on a part of the inner lead and / or the tie bar, it is possible to simultaneously prevent the intrusion of water and the withdrawal of water.

【0016】[0016]

【実施例】図2は本発明にかかる樹脂封止型半導体装置
に用いられるリードフレームの上面図であり、また図3
は図2に示すリードフレームに半導体チップ6を搭載し
た後、ボンディングパッド7とリード2とをワイヤ8で
接続した状態を示した上面図である。
2 is a top view of a lead frame used in a resin-sealed semiconductor device according to the present invention, and FIG.
FIG. 3 is a top view showing a state in which the semiconductor chip 6 is mounted on the lead frame shown in FIG. 2 and then the bonding pad 7 and the lead 2 are connected by the wire 8.

【0017】なお、図2および図3はそれぞれ従来のリ
ードフレームの図5および図6に対応しており、同一構
成部分には同一符号を付し、その詳細説明は省略する。
また図1は図3中のB−B′部分の断面構造図を示して
いる。
FIGS. 2 and 3 correspond to FIGS. 5 and 6 of the conventional lead frame, respectively, and the same components are designated by the same reference numerals and detailed description thereof will be omitted.
Further, FIG. 1 shows a sectional structural view of a portion BB 'in FIG.

【0018】第1図〜第3図に示される実施例ではイン
ナリード2の一部に突起(ライズ)10を設け水分の侵
入と引き抜けの防止を実現している。この突起10の形
成に当たってはインナリード2を加工する際にアンカー
ホール3の打ち抜きを一辺を残して行うようにし、残っ
た部分を折り曲げて形成すればよい。
In the embodiment shown in FIGS. 1 to 3, protrusions (rises) 10 are provided on a part of the inner leads 2 to prevent the ingress and withdrawal of water. In forming the protrusion 10, the anchor hole 3 may be punched out with one side left when the inner lead 2 is processed, and the remaining portion may be bent.

【0019】図4は図1においてB部として示される突
起10近傍の拡大図である。突起10の形成は図に示す
ようにアンカーホール3を全方向完全に抜いてしまうの
ではなく、アンカーホール3の外側の一辺を残して抜
き、残った部分を上方もしくは下方に折り曲げるように
すればよい。突起10の折曲げ角度は直角もしくはそれ
以上とすることができる。
FIG. 4 is an enlarged view of the vicinity of the protrusion 10 shown as B in FIG. The protrusion 10 is not formed by completely removing the anchor hole 3 in all directions as shown in the figure, but by removing one side outside the anchor hole 3 and bending the remaining part upward or downward. Good. The bending angle of the protrusion 10 may be a right angle or more.

【0020】この場合、残す一辺は外側に向いた一辺が
望ましい。
In this case, it is desirable that one side to be left should be one facing outward.

【0021】リードフレーム形成後、ベッド1にチップ
6を搭載し、チップ6上のボンディングパッド7とリー
ド2とをワイヤ8で接続した後、所定の範囲を樹脂で封
止し、樹脂バリを取って必要な処理、例えば錫あるいは
はんだメッキ等の表面メッキ処理を施し、機械加工によ
り封止樹脂外のリード2を所望の形状に加工して製品と
する。なお樹脂で封止する際には突起10は樹脂内に完
全に封止された状態にすることが必要である。
After the lead frame is formed, the chip 6 is mounted on the bed 1, the bonding pad 7 on the chip 6 and the lead 2 are connected by the wire 8, and then a predetermined area is sealed with resin to remove the resin burr. Necessary processing, for example, surface plating processing such as tin or solder plating is performed, and the lead 2 outside the sealing resin is processed into a desired shape by mechanical processing to obtain a product. When sealing with resin, it is necessary that the protrusion 10 is completely sealed in the resin.

【0022】このようにインナリードの一部に突起を形
成するようにしたことにより、突起の分だけ樹脂との接
触面積が増加して引き抜けに抗する樹脂の量が増加し、
突起が樹脂と係合するためリードのみやリードと樹脂と
がともに引き抜けることを防止できる。また、インナリ
ードに設けられた突起が機械加工されることによって加
工硬化して剪断強度が増すためリードがアンカーホール
部で破断し引き抜けることが防止される。さらに、イン
ナリードの実質幅を減少させているので水分の侵入を有
効に防止することができる。
By forming the protrusions on a part of the inner leads as described above, the contact area with the resin is increased by the amount of the protrusions, and the amount of the resin against pull-out is increased.
Since the protrusion engages with the resin, it is possible to prevent only the lead or the lead and the resin from being pulled out. Further, since the protrusions provided on the inner leads are machined to be work-hardened to increase the shear strength, the leads are prevented from breaking and pulling out at the anchor hole portion. Furthermore, since the substantial width of the inner leads is reduced, it is possible to effectively prevent the intrusion of water.

【0023】なお、本実施例の場合にはリード2の部分
のみに突起10を設けているが、タイバー4の部分にも
突起を設けてもよい。また突起10の形状は本実施例に
示されるものに限定されるものではなく、鉤型に折り曲
げた状態にしてもよい。なお突起10を鉤型に折り曲げ
た場合には突起10の端は外側を向くようにしておくの
が望ましい。このように突起10を鉤型に形成すれば、
リードの引き抜けを有効に防止できるだけでなく水分の
侵入をも有効に遮断することができる。
Although the projection 10 is provided only on the lead 2 in the present embodiment, the projection may be provided on the tie bar 4 as well. Further, the shape of the protrusion 10 is not limited to that shown in the present embodiment, and may be bent into a hook shape. When the protrusion 10 is bent into a hook shape, it is desirable that the end of the protrusion 10 faces outward. If the protrusion 10 is formed in a hook shape in this way,
Not only can the lead be pulled out effectively, but the ingress of water can also be effectively blocked.

【0024】[0024]

【発明の効果】このように本発明による樹脂封止型半導
体装置では、インナリードやタイバーに突起を設けてい
るため、リードが引き抜けたり水分がチップまで侵入し
てチップ上の金属配線を腐食させる等の不良の発生を防
止でき、信頼性を著しく向上させることができる。
As described above, in the resin-encapsulated semiconductor device according to the present invention, since the inner leads and the tie bars are provided with the protrusions, the leads are pulled out or moisture penetrates into the chip to corrode the metal wiring on the chip. It is possible to prevent the occurrence of defects such as the occurrence of defects and significantly improve the reliability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の樹脂封止型半導体装置の一部切断断面
FIG. 1 is a partially cut sectional view of a resin-encapsulated semiconductor device of the present invention.

【図2】本発明に用いられるリードフレームの上面図FIG. 2 is a top view of a lead frame used in the present invention.

【図3】本発明に用いられるリードフレームに半導体チ
ップを搭載した様子を示す上面図
FIG. 3 is a top view showing a state in which a semiconductor chip is mounted on a lead frame used in the present invention.

【図4】本発明で形成される突起の詳細構造を示す拡大
FIG. 4 is an enlarged view showing a detailed structure of a protrusion formed by the present invention.

【図5】従来の半導体装置に使用されるリードフレーム
の上面図
FIG. 5 is a top view of a lead frame used in a conventional semiconductor device.

【図6】従来の半導体装置に使用されるリードフレーム
に半導体チップを搭載
FIG. 6: A semiconductor chip is mounted on a lead frame used in a conventional semiconductor device.

【図7】図6に示すリードフレームのA−A′での切断
断面図
FIG. 7 is a sectional view taken along the line AA ′ of the lead frame shown in FIG.

【図8】図7のA部の詳細拡大図である。8 is a detailed enlarged view of a portion A in FIG.

【符号の説明】[Explanation of symbols]

1 ベッド 2 リード 3 アンカーホール 4 タイバー 5 樹脂封止部 6 半導体チップ 10 突起(ライズ) 1 bed 2 lead 3 anchor hole 4 tie bar 5 resin sealing part 6 semiconductor chip 10 protrusion (rise)

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】半導体素子を搭載する素子搭載部と、一端
がこの搭載部の一部に一体化して接続された他端が封止
樹脂内の外方へ延在するタイバーと、一端が前記素子搭
載部の周辺近傍に配設され他端が封止樹脂外へ延在する
複数のリードとを備えた樹脂封止型半導体装置におい
て、 前記タイバーおよび/または複数のリードの樹脂封止さ
れた部分の一部に突起を設けたことを特徴とする樹脂封
止型半導体装置。
1. An element mounting portion on which a semiconductor element is mounted, one end integrally connected to a part of the mounting portion, the other end extending outward in the sealing resin, and one end In a resin-sealed semiconductor device provided with a plurality of leads arranged in the vicinity of the periphery of an element mounting portion and having the other end extending outside the sealing resin, the tie bar and / or the leads are resin-sealed. A resin-encapsulated semiconductor device, characterized in that a protrusion is provided on part of the portion.
【請求項2】前記突起はアンカーホールの一辺を残して
折り曲げて形成されたものであることを特徴とする請求
項1記載の樹脂封止型半導体装置。
2. The resin-encapsulated semiconductor device according to claim 1, wherein the protrusion is formed by bending with one side of the anchor hole left.
JP4226078A 1992-08-25 1992-08-25 Resin-sealed semiconductor device Pending JPH0677380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4226078A JPH0677380A (en) 1992-08-25 1992-08-25 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4226078A JPH0677380A (en) 1992-08-25 1992-08-25 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH0677380A true JPH0677380A (en) 1994-03-18

Family

ID=16839478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4226078A Pending JPH0677380A (en) 1992-08-25 1992-08-25 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH0677380A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127696A1 (en) * 2011-03-24 2012-09-27 三菱電機株式会社 Power semiconductor module and power unit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012127696A1 (en) * 2011-03-24 2012-09-27 三菱電機株式会社 Power semiconductor module and power unit device
JP5701377B2 (en) * 2011-03-24 2015-04-15 三菱電機株式会社 Power semiconductor module and power unit device
US9129931B2 (en) 2011-03-24 2015-09-08 Mitsubishi Electric Corporation Power semiconductor module and power unit device

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