JPH0674416B2 - Fluorescent material thin film manufacturing method and manufacturing apparatus - Google Patents

Description

The present invention relates to a fluorescent substance thin film for forming a thin film of a fluorescent substance used for cathode ray tubes, X-ray fluorescent plates, electroluminescence, etc. on an arbitrary substrate. Manufacturing method and manufacturing apparatus therefor.

[Prior art]

In order to manufacture a fluorescent material, a method of firing a raw material compound at a high temperature has been conventionally used. For example, ZnS: Cu
In order to manufacture, it is necessary to add 0.2 to 0.3% by weight of copper to ZnS and perform firing at 1100 ° C. for 1 hour in a dry H ₂ S atmosphere. The fluorescent material produced by firing is used as a powder supported on an appropriate binder, so that its application range is limited. Electroluminescence panel (EL) which is a typical device using fluorescent material
Panel) is a high-brightness, high-efficiency EL from a dispersion-type EL panel in which a fluorescent material is supported by a binder made of an organic material.
Aiming for panels, the focus of research is shifting to thin-film EL panels. In order to create a high-luminance, high-efficiency thin film EL panel, it is important to improve the crystal quality of the fluorescent substance thin film, which is the light emitting layer. Conventionally, an electron beam evaporation method and a sputtering method have been used to manufacture a fluorescent substance thin film. In these methods, the crystal quality of the obtained thin film is not very good, and a pellet or a spatula target for vapor deposition must be prepared according to the fluorescent material to be formed, and a pellet or a spatula for vapor deposition must be prepared. Due to the difficulty of producing the target, applicable materials are limited.

In recent years, the vapor phase chemical decomposition method (MOCVD method) of organometallic compounds has been attracting attention as a technology for producing extremely high-quality single crystal and polycrystalline thin films in the compound semiconductor thin film production process. The MOCVD method uses a Group II or Group III organometallic compound vaporized by bubbling carrier gas and a V
By reacting with a hydrogen compound of group I, group V, or an alkyl compound at a high temperature, group II-VI or group III-V
Group III compound semiconductor thin films are manufactured. It is also possible to use an organometallic compound, a hydrogen compound, an alkyl compound, or the like for doping. In the MOCVD method, the raw material used is a gas or a liquid, and the liquid raw material is vaporized by bubbling the carrier gas and supplied, so that the total amount of the raw material supplied can be controlled by the gas flow rate. The gas flow rate can be controlled with high accuracy and reproducibility by the mass flow controller. Therefore, it can be said that the MOCVD method is an extremely excellent method of controlling the composition. Moreover,
The reaction furnace needs only one temperature range, and the size of the chamber can be appropriately changed according to the size and the number of substrates, so that the apparatus shape is simple and the substrate processing capacity is large.

Recently, attention has been paid to the good film quality obtained by the MOCVD method and the mass productivity thereof, and attempts have been made to apply the MOCVD method to the manufacture of EL panels. (J. Crystal Growth 59 (198
2) P.155) Mn has been reported so far.
Only the EL panel using ZnS as the light emitting layer. This is (C ₅ H ₄ -CH ₃ ) Mn (CO) ₃ (Tricarbonylmethyl Cyc
lopentadienyl Manganese (TCM) is a liquid organometallic compound having an appropriate vapor pressure near room temperature. FIG. 1 shows a schematic diagram of a MOCVD system for forming a conventionally used Mn-doped ZnS thin film. H ₂ is used as carrier gas. A rotatable column is provided in the center of a quartz glass reaction tube, and a SiC-coated carbon susceptor and a substrate are placed on it. Substrate heating is performed from the side of the reaction furnace using a high-frequency heating furnace, an infrared furnace, or a resistance heating furnace. DEZ which is the source of Zn and Mn:
(C ₂ H ₅ ) ₂ Zn or DMZ: (CH ₃ ) ₂ Zn and TCM are each sealed in a bubbler. Since these are liquids, they are bubbled by a carrier gas to be vaporized, and then introduced into the reaction furnace through a raw material gas introduction pipe. Also S
The source of H ₂ S is diluted with a carrier gas into an appropriate concentration and then introduced into the reactor. The source gases are mixed and reacted in the vicinity of the substrate, and a ZnS: Mn thin film is formed on the substrate according to the gas composition.

[Problems to be solved by the invention]

In order to form a high quality fluorescent material thin film by MOCVD, the issue is how to incorporate the additive element into the base thin film. As described above, a liquid organometallic compound having an appropriate vapor pressure is only known as TCM as an Mn source, and for other additive elements, the organometallic compound is a solid, Alternatively, the fact is that it is extremely difficult to handle and obtain. Therefore, almost no progress has been made in the technique of forming a fluorescent substance thin film having an additive element other than Mn by the MOCVD method.

[Means for solving problems]

The method for producing a fluorescent substance thin film according to the present invention comprises a group II organometallic compound, at least one compound selected from a group VI hydride or a group VI alkyl compound, and a solid compound serving as a source of an element or a compound serving as an emission center. In the method for producing a fluorescent substance thin film by a metal-organic vapor-phase thermal decomposition method using as a raw material, a Group II organometallic compound and VI
Group hydride or at least one compound selected from group VI alkyl compounds in a gas phase to deposit a thin film as a matrix of the fluorescent substance thin film, and a source of the element or compound as the luminescent center The solid compound is heated and melted, and vapor of the heated and melted solid compound is supplied into the atmosphere for forming the base thin film to deposit the base thin film on the substrate and at the same time on the substrate. And depositing the solid compound into the thin film to be the matrix, thereby incorporating the solid compound.

In addition, a Group II organometallic compound and a Group VI hydride or
In a method for producing a fluorescent substance thin film by a metalorganic vapor phase pyrolysis method using as a raw material at least one compound of a group VI alkyl compound and a solid compound serving as an emission center element or a compound source A step of reacting the group II organometallic compound with at least one compound selected from the group VI hydrides or the group VI alkyl compounds in a vapor phase state to deposit a thin film as a matrix of the fluorescent substance thin film; A solid compound serving as a supply source of the element or compound serving as the luminescence center is heated and melted, and vapor of the heated solid compound is supplied into a forming atmosphere of the thin film serving as a base, thereby forming a thin film serving as a base. Simultaneously depositing on the substrate, decomposition of the solid compound,
Alternatively, a step of incorporating an element serving as an emission center into the thin film serving as the matrix by a reaction of the solid compound with the group II organometallic compound or the group VI hydride or group VI alkyl compound.

In addition, dimethyl zinc or diethyl zinc is used as the group II organometallic compound, and the general formula ROR ′, RSR ′, RSeR ′ (R, R ′ = CnH2n + 1, n = 0,1,2) is used as the group VI alkyl compound.
..) One or more compounds represented by the formula (1) are used.

Further, the solid compound serving as a supply source of the element serving as the emission center and the compound is a halogen compound, oxide or sulfide of a transition metal element or a rare earth element.

Further, the apparatus for producing a fluorescent substance thin film of the present invention comprises a reaction furnace including a substrate on which a fluorescent substance thin film is formed, a heating means for heating the substrate in the reaction furnace, and a group VI hydride in the reaction furnace. Alternatively, a group VI raw material supply line for supplying at least one compound of the group VI alkyl compounds, a group II raw material supply line for supplying a group II organometallic compound to the reaction furnace, and an element serving as an emission center in the reaction furnace. In the apparatus for producing a fluorescent substance thin film, which comprises a solid-state light source supply line for supplying a solid compound having, a heating means for bringing the solid compound into a molten state is provided, and the light-emitting center raw material supply line is A melt reservoir for accumulating the solid compound in a molten state, and a carrier gas line for supplying a carrier gas so as to pass through the melt surface of the solid compound in the melt reservoir. And are characterized.

[Action]

In the fluorescent thin film manufacturing method and manufacturing apparatus according to the present invention, the following two cases can be considered as the mechanism by which the emission center is incorporated into the host thin film.

(1) Incorporation of all of the elements that make up the source of the emission center When zinc iodide, zinc bromide, zinc chloride, etc. are used as the source, zinc contributes to the formation of the base thin film, and iodine, bromine, chlorine The atom becomes the emission center. When a transition metal sulfide such as silver sulfide, copper sulfide, or lead sulfide is used as a supply source, sulfur contributes to formation of a base thin film, and the transition metal serves as an emission center.

(2) When some of the elements that make up the source of the emission center are incorporated Terbium chloride (TbCl ₃ ), Samarium chloride (SmCl ₃ ),
When rare earth halides such as diprodium chloride (DyCl ₃ ) are used as the source, when hydrogen sulfide is used as the group VI source, the rare earth halides react with hydrogen sulfide,
It becomes a sulfide and liberates the halogen element. Therefore, it is the rare earth element that becomes the emission center.

〔Example〕

A schematic diagram of the MOCVD apparatus according to the present invention is shown in FIGS. Second
The figure shows a horizontal furnace. The reaction furnace is made of transparent quartz, has a gas outlet, and is connected to an exhaust system via a valve so that the inside of the reaction furnace can be evacuated. The substrate is placed on a carbon susceptor coated with SiC, and the tip of the thermocouple is embedded in the carbon susceptor so that the temperature near the substrate can be monitored. Is a supply line of a group VI raw material, a group VI hydride, or a group VI alkyl compound. If the Group VI raw material is a gas, use a mass flow controller or flow meter to
A Group VI raw material is supplied from a cylinder, diluted with a carrier gas flowing through a dilution line to a predetermined concentration, and then introduced into a reaction furnace. When the Group VI raw material is liquid, the raw material can be vaporized and sent to the reaction furnace by enclosing the raw material in a stainless steel cylinder and bubbling carrier gas. The supply amount can be controlled by the bubbling amount and the temperature of the container. The vaporized raw material is diluted with carrier gas and reaches the reactor. The Group VI raw material can be used in combination with liquid or gas. That is, if the valve is opened and the cylinder is closed, the gas raw material is used. If the valve is opened and the cylinder is closed, the gas raw material is used. If the valve is closed, the valve is closed, the cylinder is opened, and the liquid raw material is used. Is an emission center doping line made of quartz or a ceramic that is stable in a corrosive atmosphere at high temperature. A solid powdered dopant is placed in the melt reservoir provided at the tip and heated. Molten dopant vapor is supplied to the reaction furnace by carrier gas. The supply amount of the dopant can be controlled by the temperature of the melt reservoir and the flow rate of the carrier gas passing through the melt reservoir. Is a supply line for Group II organometallic compounds. II
The group organometallic compound is enclosed in a cylinder because it is liquid at room temperature and pressure, and is supplied to the reaction furnace as vapor by bubbling carrier gas. The supply amount is controlled by the bubbling amount and the temperature of the cylinder, and the carrier gas dilutes it to a predetermined concentration. Is a heating furnace by resistance heating, high frequency, infrared rays, etc., and each can control temperature independently.

FIG. 3 is an example of a vertical furnace. The raw material supply system is the same as the horizontal furnace. Is a group VI raw material supply line, is a group II organometallic compound supply line, is a dopant supply carrier gas line, and is a dopant melt reservoir.
In the vertical furnace, the basic structure and performance of each part of the reaction furnace are the same as those of the horizontal furnace except that the substrate can be rotated by. The flow of carrier gas inside the melt reservoir is indicated by arrows.

The outline of the manufacturing process of the phosphor thin film in the present invention is described above. First, the desired dopant is placed in the melt reservoir. Next, the substrate on which the thin film is to be formed is set on the susceptor. After that, vacuum the system,
Oxygen remaining in the reaction furnace and adsorbed gas on the inner wall are removed. Then, a carrier gas is introduced into the reaction furnace to return the internal pressure to normal pressure. The carrier gas used may be hydrogen gas, helium, argon gas, or a mixture thereof, which is easy to purify. After the evacuation of the reaction furnace and the introduction of the carrier gas are repeated several times, the carrier gas is allowed to flow in the reaction furnace for a while. After performing a gas flow for an appropriate time, start heating the two heating furnaces while flowing a carrier gas. The output of the furnace for heating the substrate is set so that a predetermined substrate temperature is obtained, and the temperature of the furnace for heating the melt reservoir is set to a temperature at which the dopant melts and has an appropriate vapor pressure. The temperature of the substrate and the melt is introduced by introducing a thermocouple near the susceptor for the substrate and the melt reservoir,
Monitor the temperature. The amount of dopant vapor supplied near the substrate is determined by the temperature of the melt reservoir, the flow rate of the carrier gas passing through the melt reservoir, the amount of melt, and the shape of the melt reservoir. Therefore, if a certain amount of dopant is set in the melt reservoir of the same shape, the supply amount of the dopant can be controlled by the temperature of the melt reservoir and the carrier gas flow rate passing through the melt reservoir. Further, if the other conditions including the substrate temperature are the same, the dopant concentration in the formed film can be determined by the temperature of the melt reservoir and the carrier gas passing through the melt reservoir. These relationships can be determined experimentally and their reproducibility is good. After the heating furnace becomes stable after reaching the specified temperature,
Start the supply of raw material gas. First, the raw material of the group VI element is supplied from a cylinder or by bubbling a liquid raw material sealed in a cylinder. Subsequently, the Group II raw material and the dopant are supplied by initiating the bubbling of the cylinder and the flow of the carrier gas to the melt reservoir, respectively. By setting the respective raw material supply times in consideration of the length and inner diameter of the piping pipe of each raw material supply line and the gas flow rate, three types of raw materials can be supplied to the vicinity of the substrate almost simultaneously. Alternatively, a bypass line and a gas switching valve are installed immediately in front of the reaction furnace, and the gas is discarded through the bypass line until the gas flow rate and flow velocity stabilize and all the raw materials are supplied to the reaction furnace by simultaneous operation of the switching valve. It can also start at the same time. After performing film growth for a predetermined time, supply of the source gas and the carrier gas to the melt reservoir is stopped, and cooling of the heating furnace is started. Even while cooling, only the carrier gas is continuously supplied into the reaction furnace. After cooling, the gas in the reaction furnace is sufficiently replaced, and the substrate is taken out. The solidified dopant may be replenished to a predetermined amount when the amount of decrease is significant, and when the amount of decrease is small, the next growth may be started as it is.

Hereinafter, the present invention will be described in more detail with reference to examples.

Example 1 A thin film ZnS: I was formed by doping zinc iodide (melting point 446 ° C.) when reacting diethyl zinc with hydrogen sulfide. The growth conditions are as follows. Substrate, transparent quartz, substrate temperature 450 ℃, growth time 10mm, carrier gas H
Diethylzinc bubbling amount at e, 0 ℃ 45ml / min (corresponding to supply amount 1.0 × 10 ^-5 mol / min) He base 10% hydrogen sulfide supply amount 27ml / min (corresponding to supply amount 1.2 × 10 ^-4 mol / min) ) Melt reservoir temperature 480 ℃ Carrier gas 35m flowing through the melt
l / min Total gas flow rate of 4.5 l / min At this time, a polycrystalline film having a thickness of about 1 μm was obtained. FIG. 4 shows the X-ray diffraction chart of the obtained film. Molybdenum was used for the bulb. From FIG. 4, it can be seen that the obtained film has a remarkable orientation in (111). FIG. 5 shows the result of elemental analysis of this film by an X-ray microanalyzer. Iodine peaks were detected in addition to zinc and sulfur, indicating that the formed film was ZnS: I. The iodine concentration can also be determined by a calibration curve obtained from a plot of characteristic X-ray intensity for an iodine standard sample of known concentration. When the polycrystalline ZnS: I film obtained by the present invention was irradiated with ultraviolet light, yellow-green or bluish-white photoluminescence was observed. The obtained photoluminescence can be recognized even under the room light and is suitable for use as a fluorescent material. As a general tendency, when the dopant supply amount was constant (when the melt reservoir temperature and the carrier gas flow rate flowing through the melt reservoir were constant), the photoluminescence was shifted from yellow green to blue when the substrate temperature was increased. In addition, when the substrate temperature was constant, the photoluminescence tended to change from blue to yellow-green as the dopant supply increased.

In Example 2 Example 1, instead of hydrogen sulfide, diethyl sulphates id is group VI alkyl compound _{((C 2 H 5) 2} S) in the same manner by using a ZnS: I is obtained It was Substrate temperature 550 ℃, growth time
Bubbling amount of diethyl sulfide at 90min for 0 ℃ 12
The other conditions were the same except that 0 ml / min (corresponding to a supply rate of 1.2 × 10 ⁻⁴ mol / min) was different from [Example 1]. The film obtained at this time was a polycrystalline film having a thickness of about 4000Å. The dependence of the obtained photoluminescence on the growth conditions also showed the same tendency as in [Example 1].

Example 3 A thin film of ZnS: Tb was formed by doping terbium chloride (melting point 588 ° C.) when reacting diethylzinc and hydrogen sulfide. The growth conditions are as follows. Substrate, transparent quartz, substrate temperature 550 ℃, growth time 15min, carrier gas He, 0 ℃, diethyl zinc bubbling amount 45ml
/ min (equivalent to supply rate 1.0 x 10 ^-5 mol / min) He-based 10% hydrogen sulfide supply rate 9 ml / min (equivalent to supply rate 4.0 x 10 ^-5 mol / min) Melt storage temperature 850 ° C Argus 40 ml / min Total gas flow 4.5 l / min At this time, a polycrystalline film having a thickness of about 1.5 μm was obtained. Sixth
The figure shows the results of elemental analysis of this film by an ion microanalyzer. Terbium peaks were observed in addition to the zinc and sulfur peaks, indicating that the ZnS film formed was doped with terbium. As a result of correcting the detection sensitivity of terbium, the equivalent concentration of terbium in the film with respect to zinc was about 4%.

The X-ray diffraction curve showed that the film was a ZnS: Tb film having a remarkable orientation on the (111) plane as in [Example 1].

In the examples, the case where the host zinc thin film is formed by using hydrogen sulfide or diethyl sulfide for the Zn zinc S source as the Zn source is described, but the fluorescent thin film manufacturing method and manufacturing apparatus according to the present invention are not limited to the Zn source. It is also possible to use dimethyl zinc as the material. If the temperature of the cylinder and the amount of bubbling in the example are changed, the device shown in the example can be used as it is. Further, as a source of the group VI element, an ether represented by the general formula ROR ′ (R and R ′ are alkyl groups),
It is also possible to use hydrogen selenide (H ₂ Se) or a dialkyl selenium represented by the general formula RSeR ′ (RR ′ is an alkyl group). In this case, ZnO,
ZnSe etc. can also be used. Furthermore, if two kinds of group VI sources are used, a mixed crystal of ZnS × Se _1-X (0 <x <1) can be used as the host thin film.

Further, ZnI ₂ and TbCl ₃ are shown in the examples as the source of the emission center. However, if the halide, oxide, or sulfide has an appropriate melting point and vapor pressure, it should be used as the source of the emission center. You can

The source of the emission center and the resulting phosphor thin film are shown below.

Source of emission center Fluorescent substance thin film Emission color Copper (I) chloride ZnS: Cu (Cl) Blue-green Copper (II) chloride ZnS: Cu (Cl) Blue-green silver sulfide ZnS: Ag Purple copper sulfide (I) ZnS: Cu Yellow green, red Lead (II) sulfide ZnS: Pb Yellow green Copper (I) sulfide, Lead (II) sulfide ZnS: Cu, Pb Blue green Copper (I) sulfide ZnSxSe1-x: Cu Yellow green [Effect of the invention] In the method and apparatus for manufacturing a fluorescent thin film according to the present invention, when forming a host thin film on any substrate by MOCVD of a Group II organometallic compound and a Group VI hydride, or an alkyl compound, an element or compound serving as an emission center Since it was possible to heat and melt the solid compound that is the supply source of the compound and to send the vapor of the compound into the matrix thin film forming atmosphere by the carrier gas, the fluorescent substance conventionally used as powder by sintering. Can be used as a thin film.
The matrix thin film formed by the MOCVD method has excellent crystallinity and orientation, so that a fluorescent substance thin film with high luminous efficiency can be obtained.

Since the solid compound, which is the source of the element or compound that becomes the emission center, is supplied as vapor, it is possible to form a thin film of 2 batches or more while the solid compound remains sufficiently in the melt reservoir without changing the evaporation amount during melting. Tonatsuta. It is superior in mass productivity to powders conventionally produced by batch processing.

By using the method and apparatus for manufacturing a fluorescent substance thin film according to the present invention, it becomes possible to use a fluorescent material in which a powder is conventionally supported on an organic binder as a good quality thin film. Thin films of fluorescent materials can be applied in many fields including EL panels. We are confident that it will make a great contribution to the development of EL panels that have excellent characteristics and are capable of multicolor display, due to the current high demand for high-quality flat display.

[Brief description of drawings]

Figure 1 shows a conventional MOCV for ZnS: Mn thin film production.
The figure which shows the outline of a D apparatus. DESCRIPTION OF SYMBOLS 1 ... Quartz reaction furnace, 2 ... Rotatable pillars 3 ... SiC-coated carbon susceptor, 4 ... Substrate, 5 ... High-frequency, infrared, resistance heating furnace, 6 ...
Cylinder containing DEZ or DMZ, 7 ... CCM containing cylinder, 8-10 ... Raw material gas introduction pipe, 11-16 ... Valve FIGS. 2 and 3 show an outline of the fluorescent substance thin film production apparatus according to the present invention. FIG. 17 ... Quartz reactor, 18 ... Gas outlet, 19 ... Valve, 20 ...
Substrate, 21 ... SiC coated carbon susceptor, 22
… Thermocouple, 23… Group VI raw material supply line, 24… Cylinder containing VI group gas raw material, 25… Dilution line, 26… Cylinder containing VI group liquid raw material, 27… Raw material supply line for emission center, 28 ... Melt reservoir, 29 ... Carrier gas line, 30 ...
Group II raw material supply line, 31 ... Cylinder containing Group II organometallic compound, 32 ... Dilution line, 33 ... Resistance heating, high frequency,
Infrared heating furnace, 34-40 ... Valve, 41 ... Carrier gas flow inside melt reservoir, 42 ... Rotable support column. Figures 4 and 5 show the fluorescent substance thin film manufacturing method according to the present invention. The figure which shows the X-ray-diffraction curve of ZnS: I, and the analysis result by the X-ray microanalyzer. FIG. 6 shows the analysis result by the ion microanalyzer of ZnS: Tb produced by the fluorescent substance thin film manufacturing method which concerns on this invention. Fig.

Claims (5)

[Claims] 1. An organic material comprising a Group II organometallic compound, at least one compound selected from Group VI hydrides or Group VI alkyl compounds, and a solid compound serving as a source of an element serving as an emission center or a compound. In a method for producing a fluorescent substance thin film by metal vapor phase thermal decomposition method, the group II organometallic compound and at least one compound selected from the group VI hydride or the group VI alkyl compound are reacted in a vapor phase state on a substrate. A step of depositing a thin film which becomes a matrix of the fluorescent substance thin film, by heating and melting a solid compound which becomes a supply source of the element or compound which becomes the luminescence center, and vapor of the heated and melted solid compound becomes the matrix. By supplying into the atmosphere for forming the thin film, the base thin film is deposited on the substrate and at the same time the solid compound is deposited on the substrate. Wherein the step of incorporating a solid compound, preparation of fluorescent material thin film characterized by comprising more in the thin film to be the base by. 2. An organic material containing a Group II organometallic compound, at least one compound selected from Group VI hydrides and Group VI alkyl compounds, and a solid compound serving as a source of an element or a compound serving as an emission center. In a method for producing a fluorescent substance thin film by metal vapor phase thermal decomposition method, the group II organometallic compound and at least one compound selected from the group VI hydride or the group VI alkyl compound are reacted in a vapor phase state on a substrate. A step of depositing a thin film which becomes a matrix of the fluorescent substance thin film, by heating and melting a solid compound which becomes a supply source of the element or compound which becomes the luminescence center, and vapor of the heated and melted solid compound becomes the matrix. By supplying the thin film to be a base material on the substrate, the solid compound is decomposed or the solid compound is solidified by supplying the thin film to the atmosphere for forming the thin film. A fluorescent substance thin film, comprising a step of incorporating an element serving as an emission center into the matrix thin film by reacting a compound with the group II organometallic compound or the group VI hydride or group VI alkyl compound Manufacturing method. 3. Dimethylzinc or diethylzinc is used as the group II organometallic compound, and the general formula ROR ', RSR', RSeR '(R, R' = CnH2n + 1, n = is used as the group VI alkyl compound.
The method for producing a fluorescent substance thin film according to claim 1 or 2, characterized in that one or more compounds represented by 0, 1, 2 ... 4. The solid compound serving as a source of the element and compound serving as the luminescence center is a halogen compound, oxide or sulfide of a transition metal element or a rare earth element. The method for producing the fluorescent substance thin film according to item 1 or 2. 5. A reaction furnace including a substrate on which a fluorescent substance thin film is formed, a heating means for heating the substrate in the reaction furnace, and at least one of a group VI hydride or a group VI alkyl compound in the reaction furnace. Group VI raw material supply line for supplying various kinds of compounds, Group II raw material supply line for supplying Group II organometallic compound to the reaction furnace, and emission center for supplying a solid compound having an element serving as an emission center to the reaction furnace In a manufacturing apparatus for a fluorescent substance thin film, comprising: a raw material supply line for use in heating, and a heating means for bringing the solid compound into a molten state, and the emission center raw material supply line stores the solid compound in a molten state. A fluorescent substance thin film comprising a melt reservoir and a carrier gas line for supplying a carrier gas so as to pass through a surface of a melt of a solid compound in the melt reservoir. Of manufacturing equipment.