JPH0671676B2 - Solder extra fine wire for bump electrode formation - Google Patents
Solder extra fine wire for bump electrode formationInfo
- Publication number
- JPH0671676B2 JPH0671676B2 JP1113977A JP11397789A JPH0671676B2 JP H0671676 B2 JPH0671676 B2 JP H0671676B2 JP 1113977 A JP1113977 A JP 1113977A JP 11397789 A JP11397789 A JP 11397789A JP H0671676 B2 JPH0671676 B2 JP H0671676B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- fine wire
- content
- bump electrode
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/268—Pb as the principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は半導体材料の接続用として好適な半田極細線、
さらに詳しくは、急冷凝固法により細いワイヤ状に作製
してなるバンプ電極形成用半田極細線に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to a solder fine wire suitable for connecting semiconductor materials,
More specifically, it relates to a solder extra fine wire for forming a bump electrode, which is formed into a thin wire shape by a rapid solidification method.
（従来の技術） 一般に、半導体材料の接続に用いる半田極細線はPbSn系
合金からなるが、本発明者は、ワイヤボンダを用いたバ
ンプ電極の形成に特に有用なバンプ電極形成用半田極細
線として、PbSn系合金を急冷凝固法により細いワイヤ状
に作製してなる半田材料を開発し、先に出願した（特開
昭63-301535号）。(Prior Art) Generally, a solder extra fine wire used for connecting a semiconductor material is made of a PbSn-based alloy, but the present inventor has proposed a solder extra fine wire for forming a bump electrode particularly useful for forming a bump electrode using a wire bonder, We developed a solder material made of PbSn alloy in the shape of a thin wire by the rapid solidification method, and filed an application for it before (JP-A-63-301535).
該出願のバンプ電極形成用半田極細線について簡単に説
明すれば、急冷凝固法により作製した合金ワイヤはその
先端を加熱してボールを形成したときに、該ボール根本
部において破断が起り易い状態になり、前記ボール上方
の合金ワイヤを引張ることによってボールがその根本部
から自動的に切断される。従って、電気トーチ等を用い
てのボール切断工程を要する事なく、高精度且つ一定の
供給量をもって、バンプ形成用のボールを提供できる効
果を奏する。Briefly describing the solder electrode fine wire for forming a bump electrode of the application, the alloy wire produced by the rapid solidification method is in a state in which when the tip is heated to form a ball, breakage easily occurs at the ball root part. The ball is automatically cut from its root by pulling the alloy wire above the ball. Therefore, the ball for bump formation can be provided with high accuracy and a constant supply amount without requiring a ball cutting process using an electric torch or the like.
（発明が解決しようとする課題） 本発明は斯るバンプ電極形成用半田極細線の有用性をさ
らに高めるべく、特に耐自然時効性（経時的な引張り強
度の保持）に着目し、それに優れた組成範囲のPbSnCu合
金及びPbSnCuSb合金を開発し、使用性，信頼性により優
れたバンプ電極形成用半田極細線を提供することを目的
とする。(Problems to be Solved by the Invention) In order to further enhance the usefulness of the solder extra fine wire for forming a bump electrode, the present invention pays special attention to natural aging resistance (holding of tensile strength over time) and is excellent in that. It is an object of the present invention to develop a PbSnCu alloy and a PbSnCuSb alloy having a composition range and to provide a solder fine wire for forming a bump electrode, which is excellent in usability and reliability.
（課題を解決するための手段） 斯る本発明の第１のバンプ電極形成用半田極細線は、Sn
を１〜10wt％,Cuを0.02〜1.5wt％含有し、残部がPbから
なる合金を、急冷凝固法により細いワイヤ状に作製して
なることを特徴とし、また第２のバンプ電極形成用半田
極細線は、Snを１〜10wt％,Cuを0.02〜1.5wt％及びSbを
0.0015〜20wt％含有し、残部がPbからなる合金を、急冷
凝固法により細いワイヤ状に作製してなることを特徴と
する。(Means for Solving the Problem) The first solder electrode fine wire for bump electrode formation of the present invention is Sn
Alloy containing 1 to 10 wt% of Cu and 0.02 to 1.5 wt% of Cu, and the balance of Pb is formed into a thin wire by a rapid solidification method, and a solder for forming a second bump electrode. Extra fine wire is Sn 1-10wt%, Cu 0.02-1.5wt% and Sb
It is characterized in that an alloy containing 0.0015 to 20 wt% and the balance being Pb is formed into a thin wire by a rapid solidification method.
（作用） バンプ電極形成用半田極細線はPbSnを母材とするが、そ
のSn含有率が1wt％未満では酸化が激しく、半田本来の
接合作用が得られない。また、急冷凝固法により作製し
たPbSn合金はSn含有率の増大に伴ない時効時間が短くな
る傾向にあり、Sn含有率が10wt％を越えると時効時間の
短さにより実用性に乏しい。従って、Snはその含有率を
１〜10wt％とした。(Function) The solder fine wire for bump electrode formation uses PbSn as a base material, but if the Sn content is less than 1 wt%, oxidation is severe and the original solder bonding function cannot be obtained. Also, the PbSn alloy produced by the rapid solidification method tends to shorten the aging time as the Sn content increases, and if the Sn content exceeds 10 wt%, the aging time is short and the practicability is poor. Therefore, the Sn content is determined to be 1 to 10 wt%.
Cuはその添加によってPbSn合金の時効性を高めるが、そ
の含有率が0.02wt％未満では時効性の改善が少なく、Sn
の含有率との関係でCu含有率の所定範囲で時効性が顕著
に改善される。しかしSnを10wt％含有せしめた場合で
も、Cuを1.5％を越えて添加させても時効性の改善にさ
ほど寄与しない。従って、Cuはその含有率を0.02〜1.5w
t％とした。Cu enhances the aging property of PbSn alloy by its addition, but if its content is less than 0.02 wt%, the aging property is not improved much.
In relation to the Cu content rate, the aging property is remarkably improved within the predetermined range of the Cu content rate. However, even if Sn is contained in an amount of 10 wt% and Cu is added in an amount of more than 1.5%, it does not contribute much to the improvement of aging. Therefore, Cu has a content rate of 0.02 to 1.5w.
t%.
Sbもまたその添加によってPbSnCu合金の時効性をさらに
高めるが、その含有率が0.0015wt％未満では時効性の改
善が少なく、またSnの含有率の増大に伴ってSbの含有率
を増加させる必要がある。しかしSnを10wt％、Cuを1wt
％含有せしめた場合でも、Sbを20wt％を越えて添加させ
ても時効性の改善にさほど寄与しない。従って、Sbはそ
の含有率を0.0015wt％〜20wt％とした。Sb also enhances the aging property of PbSnCu alloys by its addition, but if its content is less than 0.0015 wt%, there is little improvement in aging property, and it is necessary to increase the Sb content ratio with the increase of the Sn content ratio. There is. But Sn 10wt%, Cu 1wt
%, Even if Sb is added in excess of 20 wt%, it does not contribute much to the improvement of aging. Therefore, the content of Sb is set to 0.0015 wt% to 20 wt%.
（実施例） 第１図及び第２図は請求項１記載のバンプ電極形成用半
田極細線の実施例、第３図は及び第４図は請求項２記載
のバンプ電極形成用半田極細線の実施例を表す。(Embodiment) FIGS. 1 and 2 show an embodiment of a solder extra fine wire for forming bump electrodes according to claim 1, and FIGS. 3 and 4 show an extra fine solder wire for forming bump electrodes according to claim 2. An example is shown.
各試料は、Sn,Cu,Sbの添加量を後述の範囲とし、残部Pb
である合金材料をAr雰囲気中で加熱溶解後、急冷凝固法
によりワイヤ状に鋳造し、その後、室温で45μｍまで伸
線することにより作製した。For each sample, the amount of addition of Sn, Cu, Sb was set in the range described below, and the balance Pb
The alloy material was melted by heating in an Ar atmosphere, cast into a wire by a rapid solidification method, and then drawn at room temperature to 45 μm.
その各試料を、伸線直後の引張り強度が90％の引張り強
度に低下するまでの時間で時効性を測定した。その測定
結果を夫々の図に示す。The aging property of each of the samples was measured by the time until the tensile strength immediately after drawing decreased to 90%. The measurement results are shown in each figure.
・実施例１（PbSnCu合金からなるバンプ電極形成用半田
極細線） 第１図及び第２図中の各試料の組成は、PbにSnを1wt％,
2wt％,5wt％,10wt％と、それらに夫々Cuを0.01〜5wt％
添加したもので、（99-X）はPb・1SnXCu、（98-X）はPb
・2Sn・XCu、（95-X）はPb・5Sn・XCu、（90-X）はPb・
10Sn・XCuである（ＸはCuの含有率である）。-Example 1 (solder fine wire made of PbSnCu alloy for forming bump electrode) The composition of each sample in Figs. 1 and 2 was 1 wt% Sn in Pb,
2 wt%, 5 wt%, 10 wt% and 0.01 to 5 wt% Cu respectively
(99-X) is Pb.1SnXCu, (98-X) is Pb.
・ 2Sn ・ XCu, (95-X) is Pb ・ 5Sn ・ XCu, (90-X) is Pb ・
10Sn.XCu (X is the Cu content).
第１図からわかるように、Snを1wt％含有の半田極細線
（99-X）Pb・1Sn・XCuは、Cuの含有率が0.02wt％（下限
値）〜1.0wt％の範囲でとくに時効性が改善され、0.04w
t％Cuで時効時間が800時間に達した。As can be seen from Fig. 1, the solder ultrafine wire (99-X) Pb / 1Sn / XCu containing 1wt% of Sn is particularly aged when the Cu content is in the range of 0.02wt% (lower limit) to 1.0wt%. Improved, 0.04w
The aging time reached 800 hours with t% Cu.
また、Snを2wt％含有の（98-X）Pb・2Sn・XCuは、Cuの
含有率が0.04wt％〜1.0wt％の範囲でとくに時効性が改
善され、0.05wt％Cuで時効時間が700時間に達した。In addition, (98-X) Pb ・ 2Sn ・ XCu containing 2 wt% of Sn has a particularly improved aging property when the Cu content is in the range of 0.04 wt% to 1.0 wt%, and the aging time is 0.05 wt% Cu. Reached 700 hours.
また第２図からわかるように、Snを5wt％含有の（95-
X）Pb・5Sn・XCuは、Cuの含有率が0.05wt％〜0.2wt％の
範囲でとくに時効性が改善され、0.1wt％Cuで時効時間
が48時間に達した。Also, as can be seen from FIG. 2, the Sn content of 5 wt% (95-
X) Pb ・ 5Sn ・ XCu showed a particularly improved aging when the Cu content was in the range of 0.05 wt% to 0.2 wt%, and the aging time reached 48 hours at 0.1 wt% Cu.
また、Snを10wt％含有の（90-X）Pb・10Sn・XCuは、Cu
の含有率が0.5wt％〜1.5wt％（上限値）でとくに時効性
が改善され、1.0wt％Cuで時効時間が30時間に達した。In addition, (90-X) Pb / 10Sn / XCu containing 10 wt% Sn is Cu
The aging was especially improved when the content of Cu was 0.5wt% to 1.5wt% (upper limit), and the aging time reached 30 hours with 1.0wt% Cu.
・実施例２（PbSnCuSb合金からなるバンプ電極形成用半
田極細線） 第３図及び第４図中の各試料は、PbにSnを1wt％,2wt％,
5wt％,10wt％、Cuを0.1wt％または1wt％と、それらにSb
を0.001〜30wt％添加したもので、（98.9-Y）はPb・1Sn
・0.1Cu・YSb、（97.9-Y）はPb・2Sn・0.1Cu・YSb、（9
4.9-Y）はPb・5Sn・0.1Cu・YSb、（89.0-Y）はPb・10Sn
・1Cu・YSbである（ＹはSbの含有率である）。-Example 2 (solder fine wire for forming bump electrodes made of PbSnCuSb alloy) Each sample in FIGS. 3 and 4 contained Sn in Pb in an amount of 1 wt%, 2 wt%,
5wt%, 10wt%, Cu 0.1wt% or 1wt% and Sb in them
Added 0.001 to 30 wt%, (98.9-Y) is Pb ・ 1Sn
・ 0.1Cu ・ YSb, (97.9-Y) is Pb ・ 2Sn ・ 0.1Cu ・ YSb, (9
4.9-Y) is Pb / 5Sn / 0.1Cu / YSb, (89.0-Y) is Pb / 10Sn
・ 1Cu · YSb (Y is the content of Sb).
第３図からわかるように、Snを1wt％,Cuを0.1wt％含有
の（98.9-Y）Pb・1Sn・0.1Cu・YSbは、Sbの含有率が0.0
015wt％（下限値）〜0.2wt％の範囲で時効性が改善さ
れ、0.2wt％を越えた以降はそれ以上の改善に変化があ
まりみられなかった。As can be seen from FIG. 3, (98.9-Y) Pb / 1Sn / 0.1Cu / YSb containing 1 wt% Sn and 0.1 wt% Cu has a Sb content of 0.0
The aging property was improved in the range of 015 wt% (lower limit) to 0.2 wt%, and after 0.2 wt% was exceeded, there was little change in further improvement.
Sbを0.01wt％含有せしめた半田極細線は時効時間が1000
時間に達し、このSbを添加しない前記0.04wt％Cu含有の
PbSnCu合金（800時間）に較べ、それ以上に改善される
ことが理解できる。Aging time is 1000 for solder fine wires containing 0.01 wt% Sb.
When the time is reached and the Sb is not added,
It can be seen that it is further improved compared to the PbSnCu alloy (800 hours).
また、Snを2wt％,Cuを0.1wt％含有の（97.9-Y）Pb・2Sn
・0.1Cu・YSbは、Sbの含有率が0.0015〜0.6wt％の範囲
で時効性が改善され、それを越えると時効時間の改善に
変化があまりみられない。Also, (97.9-Y) Pb ・ 2Sn containing 2wt% Sn and 0.1wt% Cu.
-0.1Cu-YSb has an improved aging property when the Sb content is in the range of 0.0015 to 0.6 wt%, and beyond that, there is little change in the improvement of the aging time.
さらに第４図からわかるように、（94.9-Y）Pb・5Sn・
0.1Cu・YSb、及び、（89.0-Y）Pb・10Sn・1Cu・YSbは、
何れもSbの含有率が20wt％（上限値）を越えると時効時
間にあまり変化がなかった。Furthermore, as can be seen from Fig. 4, (94.9-Y) Pb ・ 5Sn ・
0.1Cu ・ YSb and (89.0-Y) Pb ・ 10Sn ・ 1Cu ・ YSb are
In all cases, when the Sb content exceeded 20 wt% (upper limit), the aging time did not change much.
（効果） 本発明によれば、請求項１項記載の組成により、特にCu
を0.02〜1.5wt％含有することによってバンプ電極形成
用半田極細線の時効性を改善することができ、また請求
項２項記載の組成により、特にSbを0.0015〜20wt％含有
することによって、請求項１項記載のPbSnCu合金の時効
性をさらに顕著に改善することができる。(Effect) According to the present invention, with the composition according to claim 1, particularly Cu
Content of 0.02 to 1.5 wt% can improve the aging property of the solder fine wire for forming bump electrodes, and the composition according to claim 2 particularly contains Sb in an amount of 0.0015 to 20 wt%. The aging property of the PbSnCu alloy described in the item 1 can be more remarkably improved.
従って、半田極細線の引張り強度が長期間保持され、そ
の使用性及び信頼性を向上し得、ワイヤボンダーにより
バンプ電極を形成するために機械的に半田極細線を供給
する際において、断線等故障の原因を少なくし作業性の
向上を図ることができる。Therefore, the tensile strength of the solder extra-fine wire can be maintained for a long period of time, its usability and reliability can be improved, and when mechanically supplying the solder extra-fine wire to form the bump electrode by the wire bonder, a failure such as disconnection occurs. It is possible to improve the workability by reducing the cause of.
第１図及び第２図はPbSnCu合金からなるバンプ電極形成
用半田極細線のCu含有率に対応する時効性を測定した線
図、第３図及び第４図はPbSnCuSb合金からなるバンプ電
極形成用半田極細線のSb含有率に対応する時効性を測定
した線図である。1 and 2 are diagrams for measuring the aging property corresponding to the Cu content of the solder fine wire for forming bump electrodes made of PbSnCu alloy, and FIGS. 3 and 4 are for making bump electrodes made of PbSnCuSb alloy. FIG. 3 is a diagram in which the aging property corresponding to the Sb content of a solder fine wire is measured.
Claims (2)
し、残部がPbからなる合金を、急冷凝固法により細いワ
イヤ状に作製してなるバンプ電極形成用半田極細線。1. A solder extra fine wire for forming a bump electrode, which is prepared by rapid cooling and solidifying an alloy containing 1 to 10 wt% of Sn and 0.02 to 1.5 wt% of Cu and the balance of Pb by a rapid solidification method.
を0.0015〜20wt％含有し、残部がPbからなる合金を、急
冷凝固法により細いワイヤ状に作製してなるバンプ電極
形成用半田極細線。2. Sn of 1 to 10 wt%, Cu of 0.02 to 1.5 wt% and Sb
An extra fine solder wire for forming bump electrodes, which is made of an alloy containing 0.0015 to 20 wt% of Pb and the balance of Pb in a thin wire shape by a rapid solidification method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1113977A JPH0671676B2 (en) | 1989-05-06 | 1989-05-06 | Solder extra fine wire for bump electrode formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1113977A JPH0671676B2 (en) | 1989-05-06 | 1989-05-06 | Solder extra fine wire for bump electrode formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02295699A JPH02295699A (en) | 1990-12-06 |
| JPH0671676B2 true JPH0671676B2 (en) | 1994-09-14 |
Family
ID=14625958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1113977A Expired - Lifetime JPH0671676B2 (en) | 1989-05-06 | 1989-05-06 | Solder extra fine wire for bump electrode formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0671676B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335222B1 (en) * | 1997-09-18 | 2002-01-01 | Tessera, Inc. | Microelectronic packages with solder interconnections |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52109456A (en) * | 1976-03-10 | 1977-09-13 | Nobukatsu Nagashima | Building up solders for sheet metal working and method of producing them |
| JPS5343449A (en) * | 1976-10-01 | 1978-04-19 | Hitachi Ltd | Interruption system for electronic computer |
-
1989
- 1989-05-06 JP JP1113977A patent/JPH0671676B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02295699A (en) | 1990-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3330072B2 (en) | High-strength lead-free solder material | |
| CN108971793B (en) | Low-temperature lead-free solder | |
| JPH10144718A (en) | Tin group lead free solder wire and ball | |
| JP4705569B2 (en) | Copper base alloy and brazing method | |
| JP3081230B2 (en) | Copper alloy used as brazing filler metal | |
| JP2701419B2 (en) | Gold alloy fine wire for semiconductor element and bonding method thereof | |
| JPH0671676B2 (en) | Solder extra fine wire for bump electrode formation | |
| US5314109A (en) | Brazing alloy and method of brazing | |
| JP3090548B2 (en) | Bonding wire for semiconductor device | |
| JPH06112251A (en) | Bonding wire for semiconductor element | |
| US2196304A (en) | Copper silver alloy | |
| JP3090549B2 (en) | Bonding wire for semiconductor device | |
| JPH10249579A (en) | Solder material | |
| JP3150744B2 (en) | White Au brazing alloy for jewelry | |
| JPH08193233A (en) | Fine gold alloy wire for semiconductor device | |
| JPH0422595A (en) | Cream solder | |
| JPS60127924A (en) | Electrode wire for wire-cut electric discharge machining and manufacture thereof | |
| JPH08127828A (en) | Gold wire for bonding | |
| CN1039923C (en) | High strength soft solder lead-base alloy | |
| JPH0679494A (en) | Zn-base alloy for joining metal | |
| JPH06112252A (en) | Pt-alloy extrafine wire for semiconductor element | |
| JPS645460B2 (en) | ||
| JPH03204193A (en) | Solder material | |
| US2734823A (en) | Sterling silver alloy | |
| JPH0134720B2 (en) |