JPH0669540A - Semiconductor light-emitting element, semiconductor light-emitting element array, optical detection device, optical information processing device and light-emitting device - Google Patents

Abstract

PURPOSE:To provide a semiconductor light-emitting element wherein a current- constricting structure is provided as well as a p-side electrode and an n-side electrode are formed in the same direction on the element. CONSTITUTION:A p-type lower-part clad layer 2, an active layer 3, an n-type upper-part clad layer 4, a p-type current-blocking layer 5 and an n-type cap layer 6 are laminated on a p-type substrate 1. An n-type current passage region (an Si-diffused region) 9 having a depth reaching the upper-part clad layer 4 and a p-type current passage region (a Zn-diffused region) 10 having a depth reaching the lower-part clad layer 2 are formed in partial regions of a wafer 14, and a groove 11 for isolation use is dug over the whole width of the wafer so as to separate both regions 19, 9. A p-side electrode 8 is formed on the side of the p-type current passage region 10 at a distance from the groove 11 for isolation use, an n-side electrode 7 is formed on the side of the n-type current passage region 9, and a light-extracting window 12 is opened in the substrate 1 so as to face the n-type current passage region 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting element, a semiconductor light emitting element array, an optical detecting device, an optical information processing device and a light emitting device.

[0002]

2. Description of the Related Art A semiconductor light emitting device in which both p-side and n-side electrodes can be taken out from the same direction of a chip is characterized by enabling wireless mounting. That is, since the wireless mounting eliminates the need for electrode wires (bonding wires), the wire bonding step is unnecessary. Since the bonding pad necessary for wire bonding is unnecessary, the element itself can be made small and high-density mounting becomes possible. Since the space between the light emitting portions can be narrowed as the device itself can be made small, the integration degree of the device can be increased, which is suitable for one-dimensional or two-dimensional array, and the wire bonding step is unnecessary. Therefore, there is an advantage that it is easy to form a one-dimensional or two-dimensional array.

Further, in such a semiconductor light emitting device, since it is not necessary to pass a current from one surface to the other surface, there is a feature that an insulating substrate can be used.

As a semiconductor light emitting device in which the p-side electrode and the n-side electrode can be taken out from the same direction of the chip as described above, a structure having a structure as shown in FIG. 23 is conventionally known. This semiconductor light emitting element 171 is a so-called dome type light emitting element, and another p-AlGaAs layer 173 is provided on the lower surface of the p-AlGaAs layer 172, and this p-AlGaAs layer 173 is provided.
The n-AlGaAs layer 1 is formed at the center of the lower surface of the GaAs layer 173.
74, and p-AlGaAs layer 173 and n-Al
A pn junction for emitting light by current injection is formed between the GaAs layer 174 and the GaAs layer 174. Furthermore, a CeO ₂ antireflection film 175 is formed by forming the upper surface side into a hemispherical shape, and an n-side electrode 176 is formed on the lower surface of the n-AlGaAs layer 174.
And an annular p-side electrode 177 is provided on the lower surface of the p-AlGaAs layer 173.

[0005]

However, such a semiconductor light emitting device 171 has an outer diameter D2 of about 400 μm,
When the light emitting element 171 is applied to an encoder, a photomicro sensor, a bar code reader, an optical detection device such as an optical pointer, an optical information processing device, a projector, etc., each light emitting element has a large light emitting area, and therefore each device is It has been difficult to increase the resolution and reduce the beam diameter.

The present invention has been made in view of the above-mentioned drawbacks of the conventional example, and an object thereof is to provide a semiconductor having a small emission diameter in which the p-side and n-side electrodes can be taken out from the same direction of the chip. It is to provide a light emitting element.

[0007]

A semiconductor light emitting device of the present invention comprises a substrate, a first conductivity type lower clad layer formed on the upper surface of the substrate, and an active layer formed on the upper surface of the lower clad layer. And a second conductivity type upper clad layer formed on the upper surface of the active layer, and a first conductivity type current blocking layer formed on the upper surface of the upper clad layer,
By introducing an impurity of the first conductivity type, a first current path region formed from the current block layer to at least the active layer, and by introducing an impurity of the second conductivity type from the current block layer A second current passage region formed to the upper cladding layer, a first electrode formed above the current block layer and electrically conductive to the first current passage region, and above the current block layer. A second electrode that is formed on the first current passage region and is insulated from the first current passage region, and that is electrically conductive to the second current passage region.

In this semiconductor light emitting device, the first
A second conductive type cap layer may be formed on the upper surface of the conductive type current blocking layer, and the first electrode and the second electrode may be formed on the upper surface of the cap layer. Furthermore, an insulating region may be formed between the first current passage region and the second current passage region at least to a depth that penetrates the cap layer.

Further, the first electrode and the second electrode can be formed on the same surface side of the element matrix.

The substrate may be made of an insulating material.

Further, the first current passage region may be formed so as to face the end face of the device base body to form an end face emission type semiconductor light emitting device. In this case, the first current passage region may be formed from one end face of the element base body to the other end face thereof.

Further, the first current passage region may be formed in a part of the region not facing the end face of the device base to form a surface emission type semiconductor light emitting device. In this case,
A light extraction window may be formed in a region of the first electrode substantially corresponding to the current passage region. Further, a light extraction window may be formed in a region of the substrate substantially corresponding to the current passage region. Further, the substrate may be a substrate transparent to the emission wavelength.

A plurality of the semiconductor light emitting devices can be arrayed. Moreover, this semiconductor light emitting element can be used for an optical detection device, an optical information processing device, and a light emitting device.

[0014]

In the semiconductor light emitting device of the present invention, the first (first conductivity type) current is supplied from the upper surface of the device body in which the crystal layers such as the active layer and the current blocking layer are laminated on the substrate to the device body. A second electrode that forms a passage region and a second (second conductivity type) current passage region, respectively, and that is formed on the upper surface of the element matrix and that is electrically connected to the first current passage region and the second current passage region. Since the electrodes are provided, a current is injected into the active layer by causing an injection current to flow between the first electrode and the current passage region and the second electrode and the current passage region, and light is generated from the active layer. be able to.

Moreover, a current blocking layer of the first conductivity type is provided above the active layer by a reverse bias pn junction to block the current, and a part of the current blocking layer is formed by the second (second conductivity type) current passage region. Is inverted to the second conductivity type, the injected current is injected into the active layer only through the second current passage region, and the current constriction structure is realized. Therefore, the current confinement effect can be enhanced by making the current path region of the second conductivity type to have a small diameter, the light emitting region of the active layer can be made small, and the beam diameter can be made small. it can.

In the semiconductor light emitting device of the present invention, the first and second current passage regions are formed from the same surface side of the device, and the first and second electrodes are provided on the same surface side. Therefore, electrode wireless mounting is possible, and the mounting method is simpler than wire bonding mounting. Further, since the bonding pad required for wire bonding is not required, the element can be made small and high-density mounting on a wiring board or the like becomes possible.

Furthermore, since the element itself can be made smaller by implementing the wireless method, the interval between the light emitting portions can be narrowed, the degree of integration of the element can be increased, and one-dimensional or two-dimensional.
Suitable for dimensional array. Moreover, since the wireless mounting is possible, even when a large number of semiconductor light emitting elements are arrayed, the mounting work is not complicated unlike the wire bonding mounting, and the mounting work can be simplified by the wireless mounting. .

Furthermore, since the first and second electrodes are on the same surface side of the device and the injected current does not necessarily have to flow through the substrate, the substrate can be formed of an insulator.

Between the first current passage region and the second current passage region, if the insulating region is formed at least to the depth of penetrating the cap layer on the upper surface of the current block layer, the injection current will flow into the active layer. It is possible to prevent leakage through the cap layer or the like without being injected.

[0020]

FIG. 1 is a top view showing a back emission surface emitting type light emitting diode (LED) A according to a first embodiment of the present invention,
It is a sectional view and a bottom view. In this light emitting diode A, p-Al _0.45 Ga is formed on the p-GaAs substrate 1.
_0.55 As lower cladding layer ^{_{2, p - -Al 0.03 Ga 0.97}} A
The s active layer 3, the n-Al _0.45 Ga _0.55 As upper cladding layer 4, the p-Al _0.45 Ga _0.55 As current blocking layer 5 and the n-Al _0.1 Ga _0.9 As cap layer 6 are laminated to form a wafer (element matrix) 14. It is configured. In a small area of the wafer 14, Si is diffused from the surface of the cap layer 6 to at least a depth penetrating the current block layer 5 (a depth reaching the upper clad layer 4 in the illustrated example) so that the n-type current flows. A passage area 9 is formed. Further, in a region of the wafer 14 isolated from the n-type current passage region 9, Zn is diffused from the surface of the cap layer 6 to at least a depth reaching the active layer 3 (in the illustrated example, a depth reaching the lower cladding layer 2). A p-type current passage region 10 is formed over the entire width of the wafer 14. Further, on the surface of the wafer 14, an isolation groove (insulation region) is formed over the entire width of the wafer 14 so as to separate the p-type current passage region 10 and the n-type current passage region 9.
11 is dug, a p-side electrode 8 is provided on the surface of the cap layer 6 on the p-type current passage region 10 side with the isolation groove 11 interposed therebetween, and the surface of the cap layer 6 on the n-type current passage region 9 side is formed. Is provided with an n-side electrode 7. Isolation groove 11
From the p-type current passage region 10 to n through the cap layer 6.
This is for preventing current from leaking to the mold current passage region 9, and is dug at least to a depth that penetrates the cap layer 6 (preferably a depth reaching the substrate 1). On the lower surface of the wafer 14, the n-type current passage region 9
A light extraction window 12 is opened in the substrate 1 so as to face the lower end surface of the substrate 1.

Therefore, in the light emitting diode A, the p-side electrode 8 and the n-side electrode 7 are taken out in the same direction or in the same plane, and moreover, the current is caused by the n-type current passage region 9 formed in the minute region. A light emitting diode A having a narrowed structure has been realized. That is, the pn junction between the upper clad layer 4 and the current blocking layer 5 is reverse biased when a voltage is applied, so that no current flows, and the conductivity type of a part of the current blocking layer 5 is reversed. It has a current constriction structure in which a current flows only through the region 9. As a result, when a driving voltage is applied between the p-side electrode 8 and the n-side electrode 7, the holes injected from the p-side electrode 8 flow into the substrate 1 through the p-type current passage region 10 and the isolation groove 11 is formed. It is injected into the active layer 3 straddling. On the other hand, electrons injected from the n-side electrode 7 are injected into the active layer 3 through the n-type current passage region 9, and holes and electrons are recombined in the active layer 3 to emit light. In this way, the light with a minute emission diameter emitted in the minute area facing the lower end surface of the n-type current passage area 9 of the active layer 3 is emitted to the outside from the light extraction window 12 on the lower surface of the wafer 14.

2 (a), (b), (c) and (d) are cross-sectional views showing a method for manufacturing the light emitting diode A described above. Hereinafter, a method of manufacturing the light emitting diode A will be described with reference to FIG. First, by using MBE (Molecular Beam Epitaxial Growth) method or MOCVD (metal-organic CVD) method or the like, p-Al _0.45 Ga _0.55 As lower clad layer 2 and p ^-- Al _0.03 Ga _0.97 As are formed on p-GaAs substrate 1. Active layer 3, n
-Al _0.45 Ga _0.55 As Upper clad layer 4, p-Al
_0.45 Ga _0.55 As current blocking layer 5 and n-Al _0.1
The Ga _0.9 As cap layer 6 is sequentially grown to form the wafer 14
To form. This is a pnpn structure.

Then, for example, a diffusing agent (OCD) having a coating property is applied on the cap layer 6 to form a p-type diffusing agent such as S containing a mixture of SiO ₂ and ZnO.
The iO ₂ —ZnO film 15 is formed. Alternatively, the SiO ₂ —ZnO film 15 may be formed by using a sputtering method or the like. Then, using an etching solution such as HF, SiO ₂
-ZnO film 15 is formed into a desired shape (for example, vertical 100 μm,
It is etched into a rectangle having a width of 300 μm). After this, S
A SiN _x film 16 is formed on the entire surface of the cap layer 6 from above the iO ₂ -ZnO film 15, and a desired position (n) which does not reach the outer peripheral end surface of the wafer 14 is formed by using an etching solution such as HF.
A window 17 having a desired shape (for example, a circle having a diameter of 50 μm) is opened at a position where the die current passage region 9 is to be provided.
Then, an Si film 18, for example, is formed as an n-type diffusing agent on the entire surface of the SiN _x film 16 by a sputtering method or the like [FIG. 2 (a)]. Here, the SiN _x film 16 functions as a mask that blocks the diffusion of Si.

Next, the wafer 14 is heat-treated using, for example, an infrared lamp flash annealing furnace to simultaneously perform p-type and n-type diffusion to form a p-type current passage region 10 and an n-type current passage region 9. [Fig. 2
(B)]. Here, the n-type diffusion for forming the n-type current passage region 9 (Si diffusion region) is performed at least to a depth that penetrates the current block layer 5, and the p-type current passage region 10 (Zn diffusion region) is formed. P-type diffusion for reaching at least the depth reaching the active layer 3 (that is, the pn that becomes the light-emitting layer).
Depth to penetrate the joint surface). In the embodiment of FIGS. 1 and 2, n-type diffusion is performed to a depth reaching the upper cladding layer 4, and p-type diffusion is performed to reach the lower cladding layer 2. In such a diffusion process, when the above diffusion source is used, n-type (Si) diffusion is 1000 ° C., a diffusion depth of about 0.25 μm is obtained by heat treatment for 10 seconds, and p-type (Zn) diffusion is 1000 ° C. Since a diffusion depth of about 1.20 μm can be obtained by heat treatment for 10 seconds, both the p-type current passage region 10 and the n-type current passage region 9 are as designed by appropriately setting the thickness of each layer and the heat treatment conditions. Is obtained.

Thus, a part of the current block layer 5 is inverted to the n-type by the n-type diffusion, and the n-type current passage region 9 continuous from the surface of the cap layer 6 is formed. Further, a part of the cap layer 6 and the upper clad layer 4 is inverted to p-type by p-type diffusion, and a p-type current passage region 10 is formed on the same surface as the n-type current passage region 9 (cap layer 6 surface). It Since the p-type and n-type current passage regions 10 and 9 are formed on the same surface of the wafer 14 as described above, the p-side electrode 8 and the n-side electrode 7 can be provided on the same surface of the wafer 14. Becomes In addition, a small n
By forming the mold current passage region 9, it is possible to achieve a minute light emitting region.

Thus, the p-type and n-type current passage regions 1
After forming 0 and 9, SiO ₂ —ZnO film 15 and SiN _x
The film 16 and the Si film 18 are removed respectively.

Next, in order to prevent current from leaking from the p-type current passage region 10 to the n-type current passage region 9 through the cap layer 6, the wafer 14 is traversed in a width of, for example, 30 μm.
The isolation groove 11 is dug in a stripe shape of m [FIG. 2 (c)]. The isolation groove 11 is formed by etching using, for example, 4H ₂ SO ₄ : 1H ₂ O ₂ : 1H ₂ O to a depth at least penetrating the cap layer 6. In the illustrated example, the isolation groove 11 is etched to a depth reaching the substrate 1.

Thereafter, a p-side electrode 8 is provided on one surface region of the surface of the cap layer 6 separated by the isolation groove 11 so as to be electrically connected to the p-type current passage region 10, and the other region is formed by a sputtering method or the like. An n-side electrode 7 is provided so as to be electrically connected to the n-type current passage region 9. Further, at a position facing the n-type current passage region 9, for example, 1NH ₄ O
The substrate 1 is etched in a desired size and shape (for example, a circle having a diameter of 100 μm) using H: 2OH ₂ O ₂ as an etching solution until the lower clad layer 2 is reached, and a light extraction window 12 is opened in the substrate 1 [see FIG. 2 (d)], a back emission surface emitting light emitting diode A as shown in FIG. 1 is obtained.

FIG. 3 is a sectional view showing a semiconductor light emitting element array B constituted by the light emitting diodes A. This semiconductor light emitting element array B is a one-dimensional or two-dimensional array of the light emitting diodes A shown in FIG. 1, and the light emitting diodes A are arranged in a one-dimensional or two-dimensional array on the same wafer 14. is there. Further, in order to prevent current from leaking through the cap layer 6 from the p-type current passage region 10 of one light emitting diode A to the n-type current passage region 9 of the other adjacent light emitting diode A, at least the cap is removed by etching. The inter-element isolation groove 13 is formed to a depth that penetrates the layer 6 (preferably the depth reaching the substrate 1), and the inter-element isolation groove 13 separates the elements.

Even if the light emitting diodes A are arrayed in this way, they can be manufactured by the same process as that for manufacturing one light emitting diode A (the isolation groove 11 and the inter-element isolation groove 13 are produced at the same time). Since each p-side electrode 8 is lined up in one row and each n-side electrode 7 is also lined up in one row, the merit that the p-side electrode 8 and the n-side electrode 7 can be taken out from the same element direction is further brought to life. That is,
Since a large number of elements are included in the wire bonding, the number of bonding points becomes very large and the mounting work becomes troublesome. However, the wireless mounting enables the bonding at one time and simplifies the mounting work.

Although the light extraction window 12 is opened in the substrate 1 in the embodiments of FIGS. 1 and 3, if the substrate 1 transparent to the emission wavelength is used, the light extraction window 12 needs to be opened. Is eliminated, and the backside etching of the substrate 1 for that purpose becomes unnecessary.

4A and 4B are a top view and a sectional view showing a light emitting diode C according to a second embodiment of the present invention. The light emitting diode C is a top emission surface emitting type light emitting diode, and a light extraction window 2 in which light generated in the active layer 3 is opened to the n-side electrode 7 through the n-type current passage region 9.
The light is emitted from 2 to the outside. Therefore, in this light emitting diode C, the p-side electrode 8 and the n-side electrode
The side electrode 7 and the light extraction window 22 are formed on the same surface side.

In the case of manufacturing the light emitting diode C, the p-type and n-type current passage regions 10 and 9 are formed in the same manner as in the manufacturing method of FIG.
After the isolation trench 11 is formed by etching so as to separate the n-type current passage region 9 and the n-type current passage region 9, a region having a predetermined size and shape facing the upper surface of the n-type current passage region 9 (for example, the n-type current passage region 9). The light extraction window 22 may be provided by forming the n-side electrode 7 and the p-side electrode 8 by a sputtering method or the like except for a circular region having a diameter of 50 μm on the upper surface of the region 9.

This top emission type light emitting diode C is also formed into a one-dimensional or two-dimensional array on the same wafer 14, and the respective light emitting diodes C are separated by the element isolation groove 23, as shown in FIG. A one-dimensional or two-dimensional semiconductor light emitting device array D can be configured.

In each of the above embodiments, the case of the light emitting diode has been described, but it goes without saying that the structures shown in FIGS. 1 to 5 can be applied to a surface emitting semiconductor laser device.

FIG. 6 is a perspective view showing an edge emitting type light emitting diode E according to a third embodiment of the present invention. In the light emitting diode E, the n-type current passage region 39 is formed so as to face one end surface of the wafer 43, and the active layer 3 is formed.
The light generated in the region of the wafer No. 3 facing the lower end face of the n-type current passage region 39 is emitted from the end face of the wafer 43 to the outside.

FIGS. 7A, 7B and 7C are front views showing a method of manufacturing the light emitting diode E of FIG. Hereinafter, a method of manufacturing the light emitting diode E will be described with reference to FIG. First, p-Ga is formed by using the MBE method or MOCVD method.
On the As substrate 31, p-Al _0.45 Ga _0.55 As lower clad layer 32, p ^-- Al _0.03 Ga _0.97 As active layer 33,
n-Al _0.45 Ga _0.55 As upper cladding layer 34, p-A
l _0.45 Ga _0.55 As current blocking layer 35 and n-Ga
A wafer 43 is formed by sequentially growing the As cap layer 36. This is a pnpn structure.

Next, by coating a diffusing agent (OCD) having a coating property on the cap layer 36, a SiO ₂ —ZnO film 44 made of a mixture of, for example, SiO ₂ and ZnO is formed as a p-type diffusing agent. To do. Alternatively, the SiO ₂ —ZnO film 44 may be formed by using a sputtering method or the like. Then, using an etching solution such as HF, SiO
_{The 2-} ZnO film 44 is formed into a desired shape (for example, 100 μ in the vertical direction).
m, rectangle 300 μm wide). After that, a SiN _x film 45 is formed on the entire surface of the cap layer 36 from above the SiO ₂ —ZnO film 44, and a desired position (n) facing the end face of the wafer 43 is formed by using an etching solution such as HF.
A window 4 having a desired shape (for example, a rectangle having a width of 5 μm and a length of 100 μm) at a position where the mold current passage region 9 is to be provided.
Open 6 Next, a Si film 47, for example, is formed as an n-type diffusing agent on the entire surface of the SiN _x film 45 by a sputtering method or the like [FIG. 7 (a)]. Here, the SiN _x film 4
5 functions as a mask for preventing the diffusion of Si.

Next, the wafer 43 is heat-treated by using, for example, an infrared lamp flash annealing furnace to simultaneously perform p-type and n-type diffusion to form a p-type current passage region 40 and an n-type current passage region 39. [Fig. 7
(B)]. Here, n-type current passage region (Si diffusion region)
The n-type diffusion for forming 39 is performed at least to a depth that penetrates the current block layer 35, and the p-type diffusion for forming the p-type current passage region (Zn diffusion region) 40 is at least deep enough to reach the active layer 33. (That is, the depth that penetrates the pn junction surface that becomes the light emitting layer). In the embodiments of FIGS. 6 and 7, n-type diffusion is performed to a depth reaching the upper cladding layer 34, and p-type diffusion is performed to a depth reaching the lower cladding layer 32. In such a diffusion process, when the above diffusion source is used, n-type (Si) diffusion is 1000 ° C., 10
A heat treatment for a second gives a diffusion depth of about 0.25 μm,
Since the type (Zn) diffusion can obtain a diffusion depth of about 1.20 μm by heat treatment at 1000 ° C. for 10 seconds, if the thickness of each layer and heat treatment conditions are set appropriately, the p-type current passage region 40
And the n-type current passage region 39 can be obtained as designed.

Thus, a part of the current blocking layer 35 is inverted into n type by n type diffusion, and an n type current passage region 39 continuous from the surface of the cap layer 36 is formed. Further, the cap layer 36 and the upper clad layer 3 are formed by p-type diffusion.
4 is partially inverted to p-type, and the n-type current passage region 39
A p-type current passage region 40 is formed on the same surface as the surface (the surface of the cap layer 36). As described above, since the p-type and n-type current passage regions 40 and 39 are formed on the same surface of the wafer 43, the p-side electrode 38 is formed on the same surface of the wafer 43.
Therefore, the n-side electrode 37 can be provided. Also, by forming a minute current passage region by n-type diffusion, a minute light emitting region can be achieved.

Thus, the p-type and n-type current passage regions 4 are formed.
After forming 0, 39, the SiO ₂ —ZnO film 44, Si
The N _x film 45 and the Si film 47 are removed respectively.

Next, in order to prevent the current from leaking from the p-type current passage region 40 to the n-type current passage region 39 through the cap layer 36, for example, a width of 3 is formed across the wafer 43.
The isolation groove 11 is dug in a stripe shape of 0 μm [FIG. 7 (c)]. The isolation groove 11 is formed by etching using, for example, 4H ₂ SO ₄ : 1H ₂ O ₂ : 1H ₂ O to a depth at least penetrating the cap layer 36. In the illustrated example, the isolation groove 11 is
It is etched to a depth reaching the substrate 31.

After that, the p-type current passage region 40 is electrically connected to the one side region separated by the isolation groove 11 on the surface of the cap layer 36 by a sputtering method or the like.
The side electrode 38 is provided, and the n-side electrode 37 is provided in the other region so as to be electrically connected to the n-type current passage region 39, so that an edge emitting light emitting diode E as shown in FIG. 6 is obtained.

FIG. 8 is a partially cutaway perspective view showing a semiconductor light emitting element array F composed of the light emitting diodes E. As shown in FIG. This semiconductor light emitting element array F is a one-dimensional array of the edge emitting type light emitting diodes E shown in FIG. 6, and the light emitting diodes E are one-dimensionally arranged on the same wafer 43. Further, the p-type current passage region 40 of one light emitting diode E is transmitted along the cap layer 36.
In order to prevent the current from leaking to the n-type current passage region 39 of the other light emitting diode E adjacent thereto, the inter-element isolator is formed at least up to the depth (preferably the depth reaching the substrate 31) penetrating the cap layer 36 by etching. The rate groove 42 is formed, and the elements are isolated by the element isolation groove 42.

FIG. 9 is a perspective view showing an edge emitting semiconductor laser device G according to a fourth embodiment of the present invention. In this semiconductor laser device G, the n-type current passage region 39 is formed over the entire length so as to reach from one end face of the wafer 43 to the other end face, and since this structure causes laser oscillation, it becomes a laser oscillator. The laser light is emitted from the end face of the active layer 33 to the outside. The semiconductor laser device G is also manufactured in the same manner as the light emitting diode E of FIG.

Also, this semiconductor laser device G can be made into a one-dimensional array on the wafer 43 by separating the devices by the inter-device isolation groove 42 like the semiconductor light emitting device array H shown in FIG. it can.

FIGS. 11A and 11B are views showing a mounting form of the semiconductor light emitting device of the present invention. In the semiconductor light emitting device J of the present invention, since the p-side electrode and the n-side electrode are taken out from the same direction, wireless mounting is possible, and
It is also possible to mount using two bonding wires, and it is also possible to perform normal mounting using both die bonding and wire bonding. FIG. 11A is a perspective view showing an example of wireless mounting, in which one lead 52 is provided.
To the p-side contact portion 53 and the other lead 54
The n-side contact portion 55 electrically connected to the semiconductor light-emitting element J (which is mounted on the upper surface of the stem 51 with the p-side and n-side electrodes 56 and 57 facing downward is provided on the upper surface of the stem 51 in an insulated state from each other. For example, a p-side electrode 56 of a back-emission type light emitting device as shown in FIG. 1 is die-bonded to the p-side contact portion 53, and an n-side electrode 57 is attached to the n-side contact portion 5.
5 is die-bonded. Reference numeral 58 is a light extraction window.

FIG. 11B is a perspective view showing an example of a mounting method using a bonding wire. The p-side pole 59 is electrically connected to one lead 52 and the n-side pole is electrically connected to the other lead 54. 60 is provided on the upper surface of the stem 51 in an insulated state from each other, and the p-side and n-side electrodes 5 are provided.
A p-side electrode 56 of a semiconductor light emitting device J (for example, a top emission type light emitting device as shown in FIG. 4) mounted on the upper surface of the stem 51 with the wires 6, 57 facing upward is wired by a bonding wire 61 to a p-side pole 59. The n-side electrode 57 is wire-bonded to the n-side pole 60.

In each of the above embodiments, the crystal growth layer such as the lower clad layer is laminated on the semiconductor substrate. In the semiconductor light emitting device of the present invention, the p-side electrode and the n-side electrode are formed.
Since the side electrode and the side electrode are formed on the same surface side, it is not necessary for a current to flow through the substrate, and an insulating substrate may be used. However, since it is necessary to pass a current between the p-side electrode and the n-side electrode, the isolation groove needs to have a depth that does not reach the substrate.

Although the p-type impurity diffusion and the n-type impurity diffusion are performed at the same time in the method of manufacturing the light emitting device described with reference to FIGS. 2 and 7, it is not always necessary to introduce the p-type and n-type impurities at the same time. Alternatively, for example, the p-type impurities may be introduced after the n-type impurities are introduced as independent steps. Furthermore, the impurity introduction method is not limited to the open tube method using the solid phase diffusion source as described above, but may be, for example, a closed tube method or an ion implantation method.

Next, application examples using the above semiconductor light emitting device will be described. According to the present invention, the p-side and n-side electrodes can be taken out from the same surface side of the device, and the semiconductor light emitting device can be made to have a small light emission diameter. When a semiconductor light emitting element having such a small light emission diameter is applied to an optical detection device, an optical information processing device, a projector, etc., the device performance (for example,
Resolution) can be dramatically improved. Hereinafter, those application examples will be described in detail.

First, the projector K shown in FIGS. 12A, 12B and 12C will be described. In this projector K, the semiconductor light emitting device 71 of the present invention is die-bonded on one lead frame 72 and is wire-bonded to the other lead frame 73, and a sealing resin 74 such as a transparent epoxy resin is used to form a low voltage into a predetermined shape. It is cast and sealed, and it has a rectangular block-shaped outer shape as a whole. Sealing resin 74
A Fresnel type flat plate lens 75 in which a large number of annular lens units are concentrically arranged is integrally formed on the surface of, and both sides of the surface have the same height as the Fresnel type flat plate lens 75,
Alternatively, a jaw 76 that is slightly higher than the Fresnel-type flat lens 75 is provided so as to project, and the jaw 76 protects the Fresnel-type flat lens 75.

In the case of this projector K, the semiconductor light emitting element 71
Has a high light emission efficiency and has a minute light emitting region. Therefore, the Fresnel-type flat plate lens 75 narrows the directional characteristics of light, and a strong output and a thin beam can be obtained even at a long distance. For example, a Fresnel type flat lens 75 has a focal length f = 4.5 mm and a lens diameter of 3.5 m.
m, and the light extraction window of the semiconductor light emitting device 71 has a diameter of 20
Beam diameter at a distance of 1 m is 4
It is about mm. However, a conventional light emitting diode that has been used conventionally (that is, the light emitting area is 3
In the case of 50 μm square), the diameter is expanded to about 70 mm, so that a great advantage can be obtained by manufacturing the projector K using the semiconductor light emitting device 71 according to the present invention.

Further, the projector 16 used conventionally
As shown in FIG. 22, there is a can seal type in which a semiconductor laser element 164 and a Fresnel type flat lens 165 are attached to a heat sink 163 protruding from a stem 162 and these are covered with a metal cap 166 as shown in FIG. The structure of the projector K of the present invention is greatly simplified as compared with such a conventional projector 161 and the cost and bulk volume can be reduced.

Here, although the one which emits parallel rays having a narrow directivity as the projection beam has been described, by changing the parameter of the Fresnel type flat plate lens 75, it can be applied to a projector such as a condensed beam or a deflected beam. The applicability is self-evident.

FIG. 13 shows a handy type pointer (light projector) L for pointing the position of an image or the like on a screen or the like. The pointer L comprises a light emitting diode (LED) 81 according to the present invention, a collimating light projecting lens 82, an operating circuit 83 and a battery 84. The light emitted from the LED 81 is projected by the light projecting lens 8.
After being collimated at 2, it is projected on the screen, and the designated spot is indicated by a light spot.

Most of the pointers currently used are those using a semiconductor laser element, but since laser light is used, it is harmful if the emitted laser light enters the eyes of the surrounding people. Due to this danger, problems such as laser regulation have occurred. Therefore, in order to solve such a problem, an LED pointer using a light emitting diode has been considered. However, in the case of an LED pointer that is collimated by a conventional light emitting LED (light emission diameter 400 μm) and a focal length f = 10 mm and a lens diameter 4 mm, the beam diameter on the screen 5 m ahead is 200 m.
It spreads so much that it is almost invisible.

On the other hand, in the case of the pointer L using the LED 81 according to the present invention, the LED 8 having an emission diameter of 10 μm is used.
1 and a similar projection lens 82 having a focal length f = 10 mm and a lens diameter of 4 mm is used, the beam diameter is as small as 5 mm even on a screen 5 m ahead, which makes it easy to see. Therefore, by improving the light output and directivity with the LED 81 of the present invention, a safe and easy-to-see pointer L can be manufactured.

FIG. 14A is a perspective view showing a transmissive optical rotary encoder M using the semiconductor light emitting device 95 according to the present invention. The rotary encoder M includes a rotary plate 92 attached to the rotary shaft 91, a fixed plate 93 facing the outer peripheral portion of the rotary plate 92, a rotary plate 92, and a projection lens 94 facing the fixed plate 93. It comprises a semiconductor light emitting device 95 and a light receiving device 96 according to the invention. The outer circumference of the rotary plate 92 is perforated with slits 97 at intervals of 1 mm, and the fixed plate 93 is also perforated with track A slits 98 and track B slits 99 at intervals of 1 mm.

Thus, the light emitted from the semiconductor light emitting element 95 is collimated by the light projecting lens 94, divided by the slits 98 and 99 of the fixed plate 93, passes through the slit 97 of the rotary plate 92, and passes through the light receiving element. Detected at 96. The track A slit 98 and the track B slit 99 of the fixed plate 93 are shifted in electrical phase angle by 90 °, and the A phase signal
The scale is read by counting when both phase signals are turned on (light receiving state) as one unit (one slit) of the scale. Further, as shown in FIG. 14B, the rotation direction can be determined depending on whether the A phase is turned on or the B phase is turned on.

In this rotary encoder, for example, a conventional full-face emission type semiconductor light emitting device (emission diameter 400 μm) is used.
m) and collimating with a projection lens having a focal length f = 10 mm and a lens diameter of 4 mm, the beam diameter on the rotating plate spreads to the slit width of the fixed plate + about 40 μm due to the poor collimating property. . Therefore, 6
With a scale of 00 DPI (40 μm pitch) or more, the beam spreads beyond the slit width, the scale cannot be read, and high resolution cannot be achieved.

On the other hand, in the rotary encoder M using the semiconductor light emitting device 95 according to the present invention, since the light emitting diameter of the semiconductor light emitting device 95 can be made as small as about 10 μm, the focal length f = 10 mm and the lens diameter 4 mm. Even if the same light projecting lens 94 is used for collimation, the beam diameter on the rotary plate 92 can be suppressed to the slit width of the fixed plate 93 + about 0.5 μm. Therefore, high resolution is possible and 600 DPI (4
It is also possible to read a scale of 0 μm pitch) or more. Therefore, by using the semiconductor light emitting device 95 according to the present invention for the rotary encoder M, the resolution of the rotary encoder M can be improved without using a special optical system.

Although the rotary encoder has been described in the above embodiment, the same effect can be obtained by using the semiconductor light emitting device according to the present invention in the linear encoder head. Furthermore, the same effect can be obtained also in the photoelectric sensor.

FIG. 15 shows a semiconductor light emitting device 10 according to the present invention.
3 is an explanatory diagram showing a configuration of an optical distance sensor N using 1. The distance sensor N includes a light projecting portion including a semiconductor light emitting element 101 and a collimator lens 102 according to the present invention,
It is composed of a light-receiving lens 103 and a light-receiving section including a position detection element 104.

FIG. 15 shows a case where the unevenness q of the object 105 is measured by the distance sensor N. The light emitted from the semiconductor light emitting device 101 is collimated by the collimator lens 102, and then is irradiated onto the object 105 to generate beam spots SP ₁ and SP ₂ , and the beam spots SP ₁ and SP ₂ are reflected respectively. An image is formed on the position detection element 104. These image forming positions can be detected by the signal ratio obtained by the signal lines 106 and 107 of the position detecting element 104, and the step q is calculated from the amount of positional deviation using the principle of triangulation.

The semiconductor light emitting device 101 according to the present invention has a high output and a limited light emitting region and has a minute light emitting window. Therefore, the semiconductor light emitting device 101 according to the present invention is used for such a distance sensor N. Thus, long-distance detection is possible, the beam spot diameter is small, and the resolution can be improved.

FIG. 16 shows the measurement result of the step q by the distance sensor N. This is 10c from the distance sensor N
2 mm and 5 mm in height and 2 at a position separated by m
It is a measurement result when an object having concave portions of mm and 5 mm is positioned, and a characteristic curve 108 corresponding to the step q is obtained. In the characteristic curve 108, a is 2 mm.
Convex part, b is a 5 mm convex part, c is a 2 mm concave part, d is 5
It is a portion corresponding to a recess of mm.

FIG. 17 shows a semiconductor laser device 1 according to the present invention.
11 is a perspective view showing a laser beam printer P using No. 11. This includes a semiconductor laser element 111, a light projecting side collimator lens 112, and a rotary polygon mirror (polygon mirror) 11.
3, a scanner motor 114 for rotating the rotary polygon mirror 113 in a constant direction at a constant speed, a scanner controller 11
5, a condenser lens 116, a photosensitive drum 117, a horizontal synchronization light receiving sensor 118, and the like.

Then, the light emitted from the semiconductor laser element 111 passes through the light projecting side collimator lens 112 to become collimated light, which is reflected by the rotary polygon mirror 113 and is scanned in the horizontal direction, and is exposed by the condenser lens 116. The latent image is formed on the photoconductor drum 117 by being condensed on the body drum 117.

In such a laser beam printer, for example, a conventional LED (light emission diameter of 400 μm) of full surface emission type is used.
m) with a condensing lens with a focal length f = 15 mm
If the light is focused on the photosensitive drum 0 mm ahead, the beam diameter on the photosensitive drum is 4.
It was as large as 8 mm, and could not satisfy the print density specification of 400 DPI.

On the other hand, in the laser beam printer P using the semiconductor laser device 111 according to the present invention,
Since the emission diameter can be reduced to about 5 μm, the beam diameter can be narrowed to 60 μm or less even when the light is condensed under the same conditions, and the specifications of 400 DPI can be sufficiently satisfied.

FIG. 18A is a perspective view showing a bar code reader Q using the semiconductor light emitting device 121 according to the present invention. This bar code reader Q includes a semiconductor light emitting device 12
1, a light projecting side condenser lens 122, a rotary polygon mirror 123, a scanner motor 124 for rotating the rotary polygon mirror 123 in a constant direction at a constant speed, a constant velocity scanning lens 125, a light receiving side condenser lens 126, and a light receiving element 127. Has been done.

Thus, the light emitted from the semiconductor light emitting element 121 passes through the light projecting side condenser lens 122, is reflected by the rotary polygon mirror 123, is scanned in the horizontal direction, and is made uniform in speed by the constant speed scanning lens 125. After being bar coded 12
8 is focused and scanned on the barcode 128. Further, the reflected light from the bar code 128 is condensed and detected on the light receiving element 127 by the light receiving side condensing lens 126, and the bar code signal BS is obtained. In this bar code reader Q, since the scanning speed of the light beam is made uniform by the constant speed scanning lens 125, when the horizontal axis represents time and the vertical axis represents the detection signal (bar code signal BS),
As shown in FIG. 18B, the signal BS corresponding to the barcode
Is obtained.

In such a bar code reader,
A semiconductor laser element is generally used as the light emitting element, but the semiconductor laser element is dangerous to the human body (especially eyes), and a bar code reader using a light emitting diode is desired. There is.

However, since a light emitting diode generally has a light emitting region of about 400 μm, if this light emitting diode is used, it is assumed that the light is condensed on a bar code 250 mm ahead by a condensing lens having a focal length f = 15 mm. ,
Due to the poor light condensing property, the beam diameter on the bar code is as large as about 6.7 mm or more, and the bar code (generally, the minimum line width is 0.2 mm) cannot be read at all.

On the other hand, according to the present invention, even in the bar code reader Q using the light emitting diode as the semiconductor light emitting element 121, the light emitting diameter can be reduced to 10 μm or less, so that the light is condensed under the same conditions. Even in the case, the beam diameter on the barcode 128 can be narrowed down to the minimum line width of the barcode 128 or less (a little less than 0.2 mm).
8 can be read. Thus, by using the semiconductor light emitting device 121 according to the present invention, it is possible to realize the bar code reader Q using a light emitting diode without using a special optical system.

FIGS. 19 (a) to 19 (g) are schematic views showing optical fiber modules R1 to R7 each comprising a semiconductor light emitting device 131 and an optical fiber 132 according to the present invention. In FIG. 19A, the end face of the optical fiber 132 is made to face the light emitting region of the semiconductor light emitting element 131, and the light emitted from the semiconductor light emitting element 131 is reflected by the optical fiber 132.
Is a direct coupling type optical fiber module R1 which enters the core from the end face of the optical fiber and is transmitted in the optical fiber 132. In addition, in FIG. 19B, the semiconductor light emitting device 131 and the end face of the optical fiber 132 are brought close to each other,
This is a direct coupling type optical fiber module R2 in which an optical resin 133 is filled between the semiconductor light emitting device 131 and the end face of the optical fiber 132. Also, FIG. 19 (c) (d)
(E) is a semiconductor light emitting device 131 and an optical fiber 132
The focusing optical system is placed between the semiconductor light emitting element 1 and
The individual lens coupling type optical fiber modules R3 to R5 in which the light emitted from the optical fiber 31 is focused by the focusing optical system and is efficiently incident into the optical fiber 132 are shown in FIG. ), The focusing rod lens 134 is used, and the optical fiber module R4 of FIG.
5 is used, the focusing rod lens 1 is used in the optical fiber module R5 of FIG.
34 and a ball lens 136 are used. In addition, FIG.
The optical fiber modules R6 and R7 of (f) and (g) are
An optical fiber (front spherical fiber) 132 having a spherical portion 137 having a lens function at its tip is used as a semiconductor light emitting device 131.
It is of a fiber lens coupling type that is opposed to.

In such an optical fiber module, the coupling efficiency between the semiconductor light emitting element and the optical fiber is
It strongly depends on the emission diameter of the semiconductor light emitting device. FIG. 20 is a diagram showing the theoretical limit value αc of the coupling efficiency in several types of optical fiber modules of the direct coupling type and the lens coupling type (engineering book “Optical Communication Element Engineering” by Hiroo Yonezu).
As shown in this figure, it is generally known that the smaller the emission diameter D1 of the semiconductor light emitting element, the higher the coupling efficiency. Therefore, in order to increase the coupling efficiency of the optical fiber module, it is very effective to reduce the emission diameter of the semiconductor light emitting device.

However, in a conventional semiconductor light emitting device such as an LED, when the light emitting diameter is reduced, the device resistance increases and heat generation becomes intense, so that a large light output cannot be obtained.

On the other hand, in the semiconductor light emitting device (particularly LED) 131 having a small light emission diameter according to the present invention, the increase in the element resistance can be suppressed to a low level even if the light emission diameter is made small, so that the light output is lowered. Can be made smaller. Therefore, it is possible to obtain high coupling efficiency without lowering the optical output. In particular, since the semiconductor light emitting device 131 of the present invention uses the AlGaInP-based material for the active layer, it is possible to obtain a high emission efficiency even at around 660 nm where the transmission loss of the plastic fiber is the minimum, and the plastic fiber is used. It is possible to configure a system with low loss and high SN ratio in an optical fiber communication system.

FIG. 21A is a schematic view showing an optical fiber type sensor T using the semiconductor light emitting device 141 according to the present invention. The optical fiber type sensor T includes a semiconductor light emitting element 141, a light projecting optical fiber 142, a light receiving optical fiber 143, a light receiving element 144, and a processing circuit 145.

Thus, the light emitted from the semiconductor light emitting element 141 is sent in the light projecting optical fiber 142 with a low loss and is emitted from the end face of the optical fiber 142 toward the object 146. The light reflected by the object 146 enters the light receiving optical fiber 143 and is detected by the light receiving element 144. In this way, the output of the received light signal detected by the light receiving element 144 changes as shown in FIG. 21B depending on the distance S between the end faces of the light projecting and receiving optical fibers 142 and 143 and the object 146. Distance to
You can know. In such a sensor, the distance when the received light signal falls to a detectable level is the detectable distance. Therefore, when the semiconductor light emitting device 141 according to the present invention is used, it is possible to emit light with a small light emission diameter, so that the coupling efficiency with the light projecting optical fiber 142 is increased, and the light entering the light projecting optical fiber 142 is prevented. Even if the distance S to the detection object 145 is increased to increase the detection signal, a sufficient detection signal can be obtained, and the detectable distance can be increased.

[0083]

According to the present invention, the first and second electrodes are taken out from the same surface side of the device, wireless mounting is possible, and a semiconductor light emitting device having a current constriction structure can be obtained. .

Since this light emitting element can be mounted wirelessly, the mounting method can be simplified as compared with the wire bonding mounting. Also, because the bonding pad required for wire bonding is not required, the element can be made smaller,
It enables high-density mounting on wiring boards.

Furthermore, since the device itself can be made smaller by implementing wirelessly, the interval between the light emitting portions can be narrowed, the integration degree of the device can be increased, and one-dimensional or two-dimensional.
Suitable for dimensional array. Moreover, since the wireless mounting is possible, even when a large number of semiconductor light emitting elements are arrayed, the mounting work is not complicated unlike the wire bonding mounting, and the mounting work can be simplified by the wireless mounting. .

Further, in this light emitting device, since the current confinement structure can enhance the effect of confining the current, the light emitting region of the active layer can be miniaturized and the beam diameter can be miniaturized.

Further, it becomes possible to form the substrate with an insulator. Furthermore, the insulating region formed between the first current passage region and the second current passage region can prevent current from leaking through the cap layer or the like.

Further, if the semiconductor light emitting device of the present invention is applied to an optical detection device, an optical information processing device, a projector, etc., a fine beam diameter can be used, so that optical performance such as resolution can be improved. it can.

[Brief description of drawings]

1A, 1B, and 1C are a top view, a cross-sectional view, and a bottom view showing a light emitting diode according to a first embodiment of the present invention.

2 (a), (b), (c) and (d) are cross-sectional views showing a method for manufacturing the above light emitting diode.

FIG. 3 is a cross-sectional view showing a semiconductor light emitting element array in which the above light emitting diodes are arrayed.

4A and 4B are a top view and a sectional view showing a light emitting diode according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a semiconductor light emitting element array in which the above light emitting diodes are arrayed.

FIG. 6 is a perspective view showing a light emitting diode according to a third embodiment of the present invention.

7 (a), (b) and (c) are front views showing a method for manufacturing the above light emitting diode.

FIG. 8 is a partially cutaway perspective view showing a semiconductor light emitting element array in which the above light emitting diodes are arrayed.

FIG. 9 is a perspective view showing a semiconductor laser device according to a fourth embodiment of the present invention.

FIG. 10 is a partially cutaway perspective view showing a semiconductor light emitting device array in which the above semiconductor laser devices are arrayed.

11A and 11B are perspective views showing a mounting form of a semiconductor light emitting device according to the present invention.

12 (a), (b) and (c) are a perspective view, a horizontal sectional view and a side sectional view showing a projector according to the present invention.

FIG. 13 is a cross-sectional view showing a pointer according to the present invention.

14A is a perspective view showing a rotary encoder according to the present invention, and FIG. 14B is a phase A signal and B of the encoder.
It is a wave form diagram which shows a phase signal.

FIG. 15 is a schematic diagram showing a configuration of a distance sensor according to the present invention.

FIG. 16 is a diagram showing an example of a measurement result obtained by the above distance sensor.

FIG. 17 is a perspective view showing a laser beam printer according to the present invention.

FIG. 18A is a perspective view showing a barcode reader according to the present invention, and FIG. 18B is a diagram showing a detection signal by the barcode reader.

19 (a) (b) (c) (d) (e) (f)
(G) is a schematic diagram showing various optical fiber modules by the present invention, respectively.

FIG. 20 is a diagram showing theoretical limit values of coupling efficiency in optical fiber modules of the direct coupling type and the lens coupling type.

FIG. 21 (a) is a schematic diagram showing the configuration of an optical fiber type sensor, and FIG. 21 (b) is a diagram showing a change in received light output depending on the distance to an object.

FIG. 22 is a partially cutaway perspective view showing a conventional light projector.

FIG. 23 is a cross-sectional view showing a conventional semiconductor light emitting device.

[Explanation of symbols]

 A Back-Emitting Light-Emitting Diode C Top-Emitting Light-Emitting Diode E Edge-Emitting Light-Emitting Diode G Edge-Emitting Semiconductor Laser Element B, D, F, H Semiconductor Light-Emitting Element Array 1,31 Substrate 2,32 Lower Cladding Layer 3,33 Active layer 4,34 Upper clad layer 5,35 Current blocking layer 6,36 Cap layer 7,37 n-side electrode 8,38 p-side electrode 9,39 n-type current passage region, 10,40 p-type current passage Area, 11,41 Isolation groove 12,22 Light extraction window 13,42 Element isolation groove 14,43 Wafer K Light projector L pointer M Rotary encoder N Optical distance sensor P Laser beam printer Q Bar code reader R1 R7 Optical fiber module T Optical fiber type sensor

Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI Technical display location H01S 3/18 H04B 10/04 10/06

Claims (15)

[Claims] 1. A substrate and a first substrate formed on the upper surface of the substrate.
A conductive type lower clad layer, an active layer formed on the upper surface of the lower clad layer, and a second layer formed on the upper surface of the active layer.
By introducing impurities of the first conductivity type into an element matrix having a conductivity type upper clad layer and a first conductivity type current block layer formed above the upper clad layer, A first current passage region formed at least in the active layer, and a second current passage region formed in the upper clad layer by introducing impurities of a second conductivity type.
Current passage region, a first electrode formed above the current block layer and conducting to the first current passage region, and a first current passage region formed above the current block layer A semiconductor light emitting device, characterized in that a second electrode is formed which is insulated from and is electrically conductive to the second current passage region. 2. A second conductive type cap layer is formed on an upper surface of the first conductive type current blocking layer, and the first electrode and the second electrode are formed on an upper surface of the cap layer. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is a semiconductor light emitting device. 3. The insulating region is formed between the first current passage region and the second current passage region at least to a depth that penetrates the cap layer. Semiconductor light emitting device. 4. The semiconductor light emitting device according to claim 1, wherein the first electrode and the second electrode are formed on the same surface side of the device base. 5. The semiconductor light emitting device according to claim 1, wherein the substrate is made of an insulating material. 6. The semiconductor according to claim 1, wherein the first current passage region is formed so as to face an end face of the element body and is of an end face emission type. Light emitting element. 7. The semiconductor light emitting device according to claim 6, wherein the first current passage region is formed from one end face to the other end face of the element body. 8. The first current passage region is formed in a part of the region not facing the end face of the element body, and is of a surface emission type. Alternatively, the semiconductor light emitting device according to the item 5. 9. The semiconductor light emitting device according to claim 8, wherein a light extraction window is formed in a region substantially corresponding to the current passage region of the first electrode. 10. The semiconductor light emitting device according to claim 8, wherein a light extraction window is formed in a region of the substrate substantially corresponding to the current passage region. 11. The semiconductor light emitting device according to claim 8, wherein the substrate is transparent to an emission wavelength. 12. The method according to claim 1, 2, 3, 4, 5, 6, 7,
8. A semiconductor light emitting element array, wherein the semiconductor light emitting element according to 8, 9, 10 or 11 is formed into an array. 13. The method according to claim 1, 2, 3, 4, 5, 6, 7,
An optical detection device comprising the semiconductor light emitting device described in 8, 9, 10 or 11. 14. Claims 1, 2, 3, 4, 5, 6, 7,
An optical information processing apparatus comprising the semiconductor light emitting device described in 8, 9, 10 or 11. 15. Claims 1, 2, 3, 4, 5, 6, 7,
8. The light emitting device according to 8, 9, 10 or 11.