JPH0667044A - Optical circuit and electric circuit mixed substrate - Google Patents
Optical circuit and electric circuit mixed substrateInfo
- Publication number
- JPH0667044A JPH0667044A JP4243997A JP24399792A JPH0667044A JP H0667044 A JPH0667044 A JP H0667044A JP 4243997 A JP4243997 A JP 4243997A JP 24399792 A JP24399792 A JP 24399792A JP H0667044 A JPH0667044 A JP H0667044A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit
- electric circuit
- optical circuit
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光CATV等の光通信
システムにおいて、加入者側へ送る信号(TV画像情報
等)または加入者側から送られる信号(チャンネル選択
信号等)を途中で電気信号に変換し、増幅する装置等に
使用される光回路・電気回路混載基板に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical communication system such as an optical CATV in which a signal sent to the subscriber side (TV image information etc.) or a signal sent from the subscriber side (channel selection signal etc.) is electrically transmitted on the way. The present invention relates to an optical circuit / electric circuit mixed board used for a device for converting into a signal and amplifying the signal.
【0002】[0002]
【従来の技術】従来、この種の装置には次のようなモジ
ュールが使用されている。 (a)O/EまたはE/O変換部、電気信号増幅部、光
分岐・合流部がそれぞれ部品で構成され、これらの部品
をパッケージングされた通信制御素子と一緒に基板に実
装したモジュール。 (b)LiNbO3 等の無機材料で形成された光導波路
と発光素子または受光素子とを接続したものが1つのユ
ニットとして構成され、このユニットを通信制御素子と
一緒に基板に実装したモジュール。 (c)GaAs等の半導体基板に、発光素子または受光
素子、通信制御素子、光導波路を形成したモノリシック
LSIのモジュール。2. Description of the Related Art Conventionally, the following modules have been used in this type of apparatus. (A) A module in which an O / E or E / O conversion unit, an electric signal amplification unit, and an optical branching / merging unit are each composed of components, and these components are mounted on a substrate together with a packaged communication control element. (B) A module in which an optical waveguide formed of an inorganic material such as LiNbO 3 and a light emitting element or a light receiving element are connected to each other to form a unit, and this unit is mounted on a substrate together with a communication control element. (C) A monolithic LSI module in which a light emitting element or a light receiving element, a communication control element, and an optical waveguide are formed on a semiconductor substrate such as GaAs.
【0003】[0003]
【発明が解決しようとする課題】(a)および(b)は
各種部品を組み合わせるため、小型化が難しく、また光
信号の高速化にあたり、各部品をつなぐ信号線長が長く
なるため、信号処理速度に限界が生じる。(c)はモノ
リシックLSIとなるため、製品歩留りが各機能素子
(発光素子または受光素子、通信制御素子)および光導
波路の歩留りの掛算となり、経済性に欠け、また光信号
波長の変更も容易ではない。As for (a) and (b), it is difficult to miniaturize because various parts are combined, and the signal line length connecting each part becomes long in order to increase the speed of the optical signal. Speed limits. Since (c) is a monolithic LSI, the product yield is multiplied by the yield of each functional element (light emitting element or light receiving element, communication control element) and optical waveguide, which is not economical, and it is not easy to change the optical signal wavelength. Absent.
【0004】[0004]
【課題を解決するための手段】本発明は、上記のような
課題に鑑み、小型化、光信号の高速処理化、光信号波長
の変更が容易で、経済性に優れる光回路・電気回路混載
基板を提供するもので、第一の構成は、電気回路を形成
した基板上に有機材料により光回路を形成し、所定位置
に発光素子、受光素子および通信制御素子などの機能素
子をベアチップの状態で搭載したことを特徴とする。In view of the above problems, the present invention provides a compact optical circuit, a high-speed optical signal processing, an easy change of the optical signal wavelength, and an economical mixed optical circuit / electric circuit mounting. The first configuration is to provide a substrate, in which an optical circuit is formed of an organic material on a substrate on which an electric circuit is formed, and functional elements such as a light emitting element, a light receiving element and a communication control element are placed at predetermined positions in a bare chip state. It is characterized by being installed in.
【0005】また第二の構成は、有機材料により光回路
を形成した基板上に、低誘電率でかつ光回路の材料より
低屈折率の有機材料からなる被覆層を形成し、この被覆
層の上に電気回路を形成し、所定位置に発光素子、受光
素子および通信制御素子などの機能素子をベアチップの
状態で搭載したことを特徴とする。In the second structure, a coating layer made of an organic material having a low dielectric constant and a refractive index lower than that of the material of the optical circuit is formed on the substrate having the optical circuit formed of the organic material. It is characterized in that an electric circuit is formed on it, and functional elements such as a light emitting element, a light receiving element and a communication control element are mounted in a bare chip state at predetermined positions.
【0006】[0006]
【作用】本発明においては、各機能素子(発光素子また
は受光素子、通信制御素子)をベアチップの状態で基板
に搭載するため、信号線長が短くなり、小型化が達成で
き、同時に光信号の通信速度の上限が拡がる。特に第二
の構成では、電気回路が低誘電率の被覆層の上に形成さ
れるため、信号遅延が著しく改善される。また光信号波
長の変更には、発光素子または受光素子の交換で容易に
対応できる。さらに各機能素子は予め選別できるため、
製品としての歩留りは高く、経済性に優れる。In the present invention, since each functional element (light emitting element or light receiving element, communication control element) is mounted on the substrate in a bare chip state, the signal line length can be shortened and miniaturization can be achieved. The upper limit of communication speed is expanded. Particularly in the second configuration, the electric circuit is formed on the coating layer having a low dielectric constant, so that the signal delay is significantly improved. The change of the optical signal wavelength can be easily dealt with by replacing the light emitting element or the light receiving element. Furthermore, since each functional element can be selected in advance,
The product yield is high and the economy is excellent.
【0007】[0007]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。図1ないし図3は請求項1に対応する本発
明の一実施例を示す。図において、1はSi基板等の半
導体基板で、その表面には電気回路2および光回路3が
形成され、かつLED等の発光素子(またはPD等の受
光素子)4および通信制御素子5がベアチップの状態で
搭載されている。Embodiments of the present invention will now be described in detail with reference to the drawings. 1 to 3 show an embodiment of the present invention corresponding to claim 1. In the figure, reference numeral 1 is a semiconductor substrate such as a Si substrate, on which an electric circuit 2 and an optical circuit 3 are formed, and a light emitting element (or a light receiving element such as PD) 4 such as an LED and a communication control element 5 are bare chips. It is installed in the state of.
【0008】電気回路2は例えばリフトオフにより所定
パターンに形成されたアルミ配線等からなる。また光回
路3は例えば基板1にエッチング等により溝6(図3参
照)を形成し、その溝6にポリイミド等の有機材料をス
ピンコート等の手段により埋め込むことにより形成され
る。さらに発光素子4および通信制御素子5は基板1の
所定位置に形成した凹部7内に固定され、これらの素子
4、5の電極と電気回路2はボンディングワイヤ(また
はTABリード)8により接続される。The electric circuit 2 is made of, for example, aluminum wiring formed in a predetermined pattern by lift-off. The optical circuit 3 is formed, for example, by forming a groove 6 (see FIG. 3) in the substrate 1 by etching or the like and filling the groove 6 with an organic material such as polyimide by means such as spin coating. Further, the light emitting element 4 and the communication control element 5 are fixed in a recess 7 formed at a predetermined position of the substrate 1, and the electrodes of these elements 4 and 5 and the electric circuit 2 are connected by a bonding wire (or TAB lead) 8. .
【0009】なお上記実施例では光回路3を基板1の溝
3内に形成したが、光回路3は図4に示すように基板1
の表面から突出するように形成することもできる。この
場合は光回路3を覆うように光回路3の材料より低屈折
率の有機材料(ポリイミド等)からなる被覆層9を設け
ることが望ましい。Although the optical circuit 3 is formed in the groove 3 of the substrate 1 in the above embodiment, the optical circuit 3 is formed in the substrate 1 as shown in FIG.
It can also be formed so as to project from the surface of the. In this case, it is desirable to provide a coating layer 9 made of an organic material (polyimide or the like) having a lower refractive index than the material of the optical circuit 3 so as to cover the optical circuit 3.
【0010】また発光素子(または受光素子)や通信制
御素子の発熱が大きい場合は、図5に示すように基板1
に穴11をあけ、その穴11の中で発光素子4および通
信制御素子(図示せず)を固定支持するヒートシンク1
2を設けるとよい。ヒートシンク12は接着剤または半
田13により基板1の裏面に固定される。If the light emitting element (or the light receiving element) or the communication control element generates a large amount of heat, as shown in FIG.
A heat sink 1 for making a hole 11 in the hole and fixing and supporting a light emitting element 4 and a communication control element (not shown) in the hole 11.
2 should be provided. The heat sink 12 is fixed to the back surface of the substrate 1 with an adhesive or solder 13.
【0011】次に図6ないし図8は請求項2に対応する
本発明の他の実施例を示す。この光回路・電気回路混載
基板は、Si基板等の半導体基板1上にフォトリソグラ
フィ技術によりポリイミド等の有機材料からなる光回路
3を形成し、その上に、低誘電率でかつ光回路3の材料
より低屈折率の有機材料(ポリイミド等)からなる被覆
層9を形成し、この被覆層9の上に電気回路2を形成
し、さらに基板1の所定位置に発光素子(または受光素
子)4および通信制御素子5をベアチップの状態で搭載
したものである。Next, FIGS. 6 to 8 show another embodiment of the present invention corresponding to the second aspect. This optical circuit / electrical circuit mixed substrate is a semiconductor substrate 1 such as a Si substrate on which an optical circuit 3 made of an organic material such as polyimide is formed by a photolithography technique, and a low dielectric constant and an optical circuit 3 of the optical circuit 3 are formed thereon. A coating layer 9 made of an organic material (such as polyimide) having a refractive index lower than that of the material is formed, an electric circuit 2 is formed on the coating layer 9, and a light emitting element (or a light receiving element) 4 is provided at a predetermined position on the substrate 1. Also, the communication control element 5 is mounted in a bare chip state.
【0012】電気回路2は前記実施例と同様、例えばリ
フトオフにより所定パターンに形成されたアルミ配線等
からなる。また発光素子4および受光素子5も前記実施
例と同様、基板1の所定位置に形成した凹部7内に固定
され、これらの素子4、5の電極と電気回路2はボンデ
ィングワイヤ8により接続される。The electric circuit 2 is made of aluminum wiring or the like formed in a predetermined pattern by lift-off, for example, as in the above embodiment. Further, the light emitting element 4 and the light receiving element 5 are also fixed in the concave portion 7 formed at a predetermined position of the substrate 1 as in the above embodiment, and the electrodes of these elements 4 and 5 and the electric circuit 2 are connected by the bonding wire 8. .
【0013】また発光素子(または受光素子)や通信制
御素子の発熱が大きい場合は、図9に示すように基板1
に穴11をあけ、その穴11の中で発光素子4および通
信制御素子(図示せず)を固定支持するヒートシンク1
2を設けるとよい。ヒートシンク12は接着剤または半
田13により基板1の裏面に固定される。If the light emitting element (or the light receiving element) or the communication control element generates a large amount of heat, as shown in FIG.
A heat sink 1 for making a hole 11 in the hole and fixing and supporting a light emitting element 4 and a communication control element (not shown) in the hole 11.
2 should be provided. The heat sink 12 is fixed to the back surface of the substrate 1 with an adhesive or solder 13.
【0014】[0014]
【発明の効果】以上説明したように本発明に係る光回路
・電気回路混載基板は、各機能素子をベアチップの状態
で基板に搭載するため、信号線長が短くなり、小型化で
きると共に、光信号の通信速度の上限を拡げることがで
きる。また光信号波長の変更に対しては、発光素子また
は受光素子の交換で容易に対応できる。さらに各機能素
子は予め選別できるため、製品としての歩留りが高く、
コスト安である。As described above, in the optical circuit / electrical circuit mixed board according to the present invention, since each functional element is mounted on the board in a bare chip state, the signal line length can be shortened and the optical circuit can be miniaturized. The upper limit of the signal transmission speed can be expanded. Further, the change of the optical signal wavelength can be easily dealt with by replacing the light emitting element or the light receiving element. Furthermore, since each functional element can be selected in advance, the yield as a product is high,
The cost is low.
【図1】 本発明に係る光回路・電気回路混載基板の一
実施例を示す平面図。FIG. 1 is a plan view showing an embodiment of an optical circuit / electrical circuit mixed board according to the present invention.
【図2】 図1のA−A線における縦断面図。FIG. 2 is a vertical sectional view taken along the line AA of FIG.
【図3】 図1のB−B線における横断面図。3 is a cross-sectional view taken along the line BB of FIG.
【図4】 本発明の他の実施例を示す横断面図。FIG. 4 is a cross-sectional view showing another embodiment of the present invention.
【図5】 本発明のさらに他の実施例を示す縦断面図。FIG. 5 is a vertical sectional view showing still another embodiment of the present invention.
【図6】 本発明のさらに他の実施例を示す平面図。FIG. 6 is a plan view showing still another embodiment of the present invention.
【図7】 図6のC−C線における縦断面図。7 is a vertical sectional view taken along the line CC of FIG.
【図8】 図6のD−D線における横断面図。8 is a cross-sectional view taken along the line DD of FIG.
【図9】 本発明のさらに他の実施例を示す縦断面図。FIG. 9 is a vertical sectional view showing still another embodiment of the present invention.
1:半導体基板 2:電気回路 3:光回路 4:発光素子(または受光素子) 5:通信制御素子 6:溝 7:凹部 8:ボンディングワイヤ 9:被覆層 11:穴 12:ヒートシンク 13:接着剤または半田 1: Semiconductor substrate 2: Electric circuit 3: Optical circuit 4: Light emitting element (or light receiving element) 5: Communication control element 6: Groove 7: Recessed portion 8: Bonding wire 9: Coating layer 11: Hole 12: Heat sink 13: Adhesive Or solder
Claims (2)
り光回路を形成し、所定位置に発光素子、受光素子およ
び通信制御素子などの機能素子をベアチップの状態で搭
載したことを特徴とする光回路・電気回路混載基板。1. An optical circuit is formed of an organic material on a substrate on which an electric circuit is formed, and functional elements such as a light emitting element, a light receiving element and a communication control element are mounted in a bare chip state at predetermined positions. Optical circuit / electric circuit mixed board.
に、低誘電率でかつ光回路の材料より低屈折率の有機材
料からなる被覆層を形成し、この被覆層の上に電気回路
を形成し、所定位置に発光素子、受光素子および通信制
御素子などの機能素子をベアチップの状態で搭載したこ
とを特徴とする光回路・電気回路混載基板。2. A coating layer made of an organic material having a low dielectric constant and a refractive index lower than that of the material of the optical circuit is formed on a substrate having an optical circuit formed of the organic material, and the electric circuit is formed on the coating layer. An optical circuit / electrical circuit mixed board, which is formed and mounted with functional elements such as a light emitting element, a light receiving element and a communication control element in a bare chip state at predetermined positions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4243997A JPH0667044A (en) | 1992-08-21 | 1992-08-21 | Optical circuit and electric circuit mixed substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4243997A JPH0667044A (en) | 1992-08-21 | 1992-08-21 | Optical circuit and electric circuit mixed substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0667044A true JPH0667044A (en) | 1994-03-11 |
Family
ID=17112184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4243997A Pending JPH0667044A (en) | 1992-08-21 | 1992-08-21 | Optical circuit and electric circuit mixed substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0667044A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093208A (en) * | 1996-09-18 | 1998-04-10 | Mitsubishi Cable Ind Ltd | Circuit board for optical communication |
WO2002014917A1 (en) * | 2000-08-17 | 2002-02-21 | Matsushita Electric Industrial Co., Ltd. | Optical mounting board, optical module, optical transmitter/receiver, optical transmitting/receiving system, and method for manufacturing optical mounting board |
US6734030B2 (en) | 2001-03-06 | 2004-05-11 | Sony Corporation | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
US6773943B2 (en) * | 2001-03-09 | 2004-08-10 | Sony Corporation | Display unit and method of fabricating the same |
US6828591B2 (en) | 2000-12-15 | 2004-12-07 | Sony Corporation | Semiconductor light emitting device and fabrication method thereof |
US6831300B2 (en) | 2001-02-21 | 2004-12-14 | Sony Corporation | Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer |
US6830946B2 (en) | 2001-02-01 | 2004-12-14 | Sony Corporation | Device transfer method and panel |
US6870190B2 (en) | 2001-03-06 | 2005-03-22 | Sony Corporation | Display unit and semiconductor light emitting device |
US6924500B2 (en) | 2000-07-18 | 2005-08-02 | Sony Corporation | Semiconductor light-emitting device and process for producing the same |
US7250320B2 (en) | 2003-03-20 | 2007-07-31 | Sony Corporation | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof |
US7297985B2 (en) | 2001-05-15 | 2007-11-20 | Sony Corporation | Display device and display unit using the same |
US7974502B2 (en) | 2002-11-06 | 2011-07-05 | Nippon Telegraph And Telephone Corporation | Optical module and optical switch |
-
1992
- 1992-08-21 JP JP4243997A patent/JPH0667044A/en active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093208A (en) * | 1996-09-18 | 1998-04-10 | Mitsubishi Cable Ind Ltd | Circuit board for optical communication |
US7221001B2 (en) | 2000-07-18 | 2007-05-22 | Sony Corporation | Semiconductor light-emitting device and process for producing the same |
US6924500B2 (en) | 2000-07-18 | 2005-08-02 | Sony Corporation | Semiconductor light-emitting device and process for producing the same |
WO2002014917A1 (en) * | 2000-08-17 | 2002-02-21 | Matsushita Electric Industrial Co., Ltd. | Optical mounting board, optical module, optical transmitter/receiver, optical transmitting/receiving system, and method for manufacturing optical mounting board |
US6964528B2 (en) | 2000-08-17 | 2005-11-15 | Matsushita Electric Industrial Co., Ltd. | Optical mount substrate, optical module, optical transmitter-receiver, optical transmitter-receiver system, and manufacturing method of optical mount substrate |
US6828591B2 (en) | 2000-12-15 | 2004-12-07 | Sony Corporation | Semiconductor light emitting device and fabrication method thereof |
US6921675B2 (en) | 2001-02-01 | 2005-07-26 | Sony Corporation | Device transfer method and panel |
US6830946B2 (en) | 2001-02-01 | 2004-12-14 | Sony Corporation | Device transfer method and panel |
US7233030B2 (en) | 2001-02-01 | 2007-06-19 | Sony Corporation | Device transfer method and panel |
US6831300B2 (en) | 2001-02-21 | 2004-12-14 | Sony Corporation | Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer |
US6870190B2 (en) | 2001-03-06 | 2005-03-22 | Sony Corporation | Display unit and semiconductor light emitting device |
US6734030B2 (en) | 2001-03-06 | 2004-05-11 | Sony Corporation | Semiconductor light emitting device and method of fabricating semiconductor light emitting device |
US6773943B2 (en) * | 2001-03-09 | 2004-08-10 | Sony Corporation | Display unit and method of fabricating the same |
US7297985B2 (en) | 2001-05-15 | 2007-11-20 | Sony Corporation | Display device and display unit using the same |
US7974502B2 (en) | 2002-11-06 | 2011-07-05 | Nippon Telegraph And Telephone Corporation | Optical module and optical switch |
US7250320B2 (en) | 2003-03-20 | 2007-07-31 | Sony Corporation | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof |
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