JPH066505Y2 - 電極の冷却機構 - Google Patents
電極の冷却機構Info
- Publication number
- JPH066505Y2 JPH066505Y2 JP1986053606U JP5360686U JPH066505Y2 JP H066505 Y2 JPH066505 Y2 JP H066505Y2 JP 1986053606 U JP1986053606 U JP 1986053606U JP 5360686 U JP5360686 U JP 5360686U JP H066505 Y2 JPH066505 Y2 JP H066505Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- refrigerant
- gas
- cooling mechanism
- perforations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001816 cooling Methods 0.000 title claims description 22
- 239000003507 refrigerant Substances 0.000 claims description 41
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000002826 coolant Substances 0.000 description 20
- 239000011148 porous material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000000498 cooling water Substances 0.000 description 9
- 239000006185 dispersion Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009795 derivation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986053606U JPH066505Y2 (ja) | 1986-04-11 | 1986-04-11 | 電極の冷却機構 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986053606U JPH066505Y2 (ja) | 1986-04-11 | 1986-04-11 | 電極の冷却機構 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62166626U JPS62166626U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-10-22 |
JPH066505Y2 true JPH066505Y2 (ja) | 1994-02-16 |
Family
ID=30879829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986053606U Expired - Lifetime JPH066505Y2 (ja) | 1986-04-11 | 1986-04-11 | 電極の冷却機構 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH066505Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372674A (en) * | 1993-05-14 | 1994-12-13 | Hughes Aircraft Company | Electrode for use in a plasma assisted chemical etching process |
US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
JP4721230B2 (ja) * | 2006-10-31 | 2011-07-13 | 京セラ株式会社 | プラズマ発生体、反応装置及び光源装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6014439A (ja) * | 1983-07-04 | 1985-01-25 | Hitachi Ltd | ウエハ回転式半導体製造装置 |
-
1986
- 1986-04-11 JP JP1986053606U patent/JPH066505Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS62166626U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-10-22 |
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