JPH0664153B2 - Faraday cage - Google Patents
Faraday cageInfo
- Publication number
- JPH0664153B2 JPH0664153B2 JP60176405A JP17640585A JPH0664153B2 JP H0664153 B2 JPH0664153 B2 JP H0664153B2 JP 60176405 A JP60176405 A JP 60176405A JP 17640585 A JP17640585 A JP 17640585A JP H0664153 B2 JPH0664153 B2 JP H0664153B2
- Authority
- JP
- Japan
- Prior art keywords
- faraday cage
- electron beam
- hole
- opening
- tapered hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Measurement Of Current Or Voltage (AREA)
- Tests Of Electronic Circuits (AREA)
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】 〔概要〕 電子またはイオンの微小電荷を測定するマイクロファラ
デーケージにおいて、 一方の開口が他方の開口より大きい透孔を明けた絶縁基
板の該透孔内に金属膜を被着し、該透孔の大きい方の開
口を導電体で塞いファラデーケージを構成したことによ
り、 微小電流を安定に測定するためのマイクロファラデーケ
ージを実現したものである。DETAILED DESCRIPTION OF THE INVENTION [Outline] In a micro Faraday cage for measuring minute charges of electrons or ions, a metal film is formed in the through holes of an insulating substrate in which one opening is larger than the other opening. The micro Faraday cage for stably measuring a minute current is realized by forming a Faraday cage by covering the opening having the larger through hole with a conductor.
〔産業上の利用分野〕 本発明はファラデーケージの改良に関する。[Field of Industrial Application] The present invention relates to an improvement of a Faraday cage.
例えば、集積回路の配線パターンに電子ビームを照射
し、そこから発生する２次電子の強さから該電子ビーム
照射部の電圧を検出する電子ビーム装置において、該電
圧の過渡応答を正確に測定するには、照射電子ビームの
パルス幅が狭い程分解能が高くなる。For example, in an electron beam apparatus that irradiates an electron beam on a wiring pattern of an integrated circuit and detects the voltage of the electron beam irradiation unit from the intensity of secondary electrons generated from the electron beam, the transient response of the voltage is accurately measured. In addition, the narrower the pulse width of the irradiation electron beam, the higher the resolution.
そこで、電子ビームパルスに含まれる電荷をファラデー
ケージで多数回捕集し、その結果生じるファラデーケー
ジの電位変化を測定することにより、非常に短い電子ビ
ームのパルス幅を正確に測定することができる。Therefore, by collecting the charges contained in the electron beam pulse many times in the Faraday cage and measuring the resulting potential change in the Faraday cage, it is possible to accurately measure the pulse width of a very short electron beam.
第４図は前記電子ビーム装置の構成と従来の電子ビーム
パルス幅測定系の概要を示す側面図である。FIG. 4 is a side view showing an outline of the configuration of the electron beam apparatus and a conventional electron beam pulse width measuring system.
第４図において、電子ビーム鏡筒１内の電子銃２から出
射し、電子ビームパルスゲート（ブランカ）3,偏向器４
の中心部を通り、エネルギ分析器５を透過する電子ビー
ムパルス６は、試料室７に収容した試料（図示せず）の
表面に照射される。すると、該試料は電子ビームパルス
６が照射された配線パターンから、該配線に印加された
電圧情報を含む２次電子を放射し、該２次電子は２次電
子検出器８で検出され電圧測定器９にて計測される。In FIG. 4, an electron beam pulse gate (blanker) 3 and a deflector 4 are emitted from an electron gun 2 in an electron beam column 1.
The electron beam pulse 6 passing through the center of the energy analyzer 5 and passing through the energy analyzer 5 is applied to the surface of the sample (not shown) contained in the sample chamber 7. Then, the sample emits secondary electrons including the voltage information applied to the wiring from the wiring pattern irradiated with the electron beam pulse 6, and the secondary electrons are detected by the secondary electron detector 8 to measure the voltage. Measured by the instrument 9.
なお図中においては、10はパルスゲート３を動作させる
ドライバ、11はドライバ10を制御する制御回路、12は偏
向器４を動作させるドライバ、13はドライバ12を制御す
る制御回路である。In the figure, 10 is a driver for operating the pulse gate 3, 11 is a control circuit for controlling the driver 10, 12 is a driver for operating the deflector 4, and 13 is a control circuit for controlling the driver 12.
かかる電子ビーム装置において、被検試料（集積回路）
が非常に高速なゲートで構成されているとき、配線パタ
ーンの電圧変化が高速であり、例えば立ち上がり時間が
0.1nsであるときその過渡状態を正確に測定するには、
0.1nsよりもさらに小さいパルス幅の電子ビームパルス
６が必要である。In such an electron beam apparatus, a test sample (integrated circuit)
Is composed of a very high speed gate, the voltage change of the wiring pattern is fast and
To measure the transient accurately when 0.1ns,
An electron beam pulse 6 with a pulse width smaller than 0.1 ns is required.
一方、従来の電子ビームパルス幅測定系は第４図に示す
如く、被検試料に換えてスイッチ16を介し微小電流計15
を接続したファラデーケージ14を設置してなる。そこ
で、ファラデーケージ14内に電子ビームパルス６を照射
し発生した２次電子17をチャージアップし、スイッチ16
を閉成したときファラデーケージ14から流れ出る微小電
流を電流計15で測定する。この電流を測定することによ
って、ファラデーケージ14に蓄積された電荷量は、電子
ビームパルス６の投射数とパルス幅と電流計15で測定さ
れた電流値との積で与えられることになり、既知なるフ
ァラデーケージ14の容量値と、電圧測定回路９を用いて
測定したファラデーケージ14の電圧値とから該パルス幅
を知ることができる。On the other hand, in the conventional electron beam pulse width measuring system, as shown in FIG.
The Faraday cage 14 connected to is installed. Therefore, the secondary electron 17 generated by irradiating the electron beam pulse 6 into the Faraday cage 14 is charged up, and the switch 16
The minute current flowing out from the Faraday cage 14 when the is closed is measured by the ammeter 15. By measuring this current, the amount of charge accumulated in the Faraday cage 14 is given by the product of the number of projections of the electron beam pulse 6, the pulse width, and the current value measured by the ammeter 15, which is known. The pulse width can be known from the capacitance value of the Faraday cage 14 and the voltage value of the Faraday cage 14 measured using the voltage measurement circuit 9.
前記パルス幅測定系において、ファラデーケージの容量
値が十分に小さい、即ち内容積が数100μｍ立方程度の
小形であれば、ファラデーケージに電子ビームパルスを
照射して放射し蓄積された２次電子の電圧測定から、そ
の電位を正確に把握できる。In the pulse width measurement system, if the capacitance value of the Faraday cage is sufficiently small, that is, if the internal volume is small, such as several 100 μm cubic, the Faraday cage is irradiated with an electron beam pulse to radiate and accumulate secondary electrons. The potential can be accurately grasped from the voltage measurement.
しかしながら、第４図に示す如く従来のファラデーケー
ジ14は、金属にてなる筺体18と金属にてなる蓋体19とで
構成しており、該構成に基づく内容積を数100μｍ立方
程度の小型にできないため、微小電流計15を含む構成の
測定系が必要であり、そのことによって電子ビームパル
ス６のプローブ電流が10−11Ａ程度以下になると、安定
した測定値が得られないという問題点があった。However, as shown in FIG. 4, the conventional Faraday cage 14 is composed of a housing 18 made of metal and a lid 19 made of metal, and the internal volume based on the construction is reduced to a few 100 μm cubic. Therefore, a measurement system including a minute ammeter 15 is required, and when the probe current of the electron beam pulse 6 becomes about 10 −11 A or less, a stable measurement value cannot be obtained. there were.
第１図は本発明になるファラデーケージの基本構成を示
す縦断面図である。FIG. 1 is a vertical sectional view showing the basic structure of a Faraday cage according to the present invention.
上記問題点は第１図に示すように、絶縁材料にてなり、
一方の開口が他方の開口より大きい透孔23を開けた基板
22、 透孔23の内面に被着した金属膜24、 金属膜24と接続し透孔23の大径側開口を塞ぐ導電体25を
具えてなることを特徴とし、 さらには、基板22がセラミックにてなること、透孔23が
テーパ孔であること、 前記テーパ孔がレーザビーム加工で形成してなること、 前記テーパ孔が電子ビーム加工で形成してなることを特
徴とする、ファラデーケージにより解決される。The above problem is caused by the insulating material, as shown in FIG.
A substrate with a through hole 23 in which one opening is larger than the other opening
22, a metal film 24 deposited on the inner surface of the through hole 23, and a conductor 25 that is connected to the metal film 24 and closes the opening on the large diameter side of the through hole 23. The through hole 23 is a tapered hole, the tapered hole is formed by laser beam processing, the tapered hole is formed by electron beam processing, by a Faraday cage Will be resolved.
上記手段になるファラデーケージは第１図に示す如く、
透孔23内に電子ビームパルス６を照射して発生しチャー
ジアップされた２次電子27の電位が、第４図の電圧測定
器９を使用し計測した電圧から知ることが容易であり、
該ファラデーケージにはチャージアップ電荷の測定時に
開離し、測定終了後に閉成しチャージアップ電荷を放電
させるためのスイッチ26を接続するだけでよい。The Faraday cage that serves as the above means is as shown in FIG.
It is easy to know the potential of the secondary electron 27 charged and generated by irradiating the electron beam pulse 6 in the through hole 23 from the voltage measured by using the voltage measuring device 9 in FIG.
The Faraday cage need only be connected with a switch 26 which is opened when the charge-up charge is measured and closed after the measurement is completed to discharge the charge-up charge.
従って、該電位計測に際してファラデーケージとグラン
ドとの間に電流計を接続する必要がないことで、プロー
ブ電流が10−11Ａ程度以下の電子ビームパルス６に対
し、安定な測定が可能となり、その電子ビームパルス幅
が安定に検出できるようになった。Therefore, since it is not necessary to connect an ammeter between the Faraday cage and the ground when measuring the potential, stable measurement is possible with respect to the electron beam pulse 6 having a probe current of about 10 −11 A or less. The electron beam pulse width can now be detected stably.
以下に、図面を用いて本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例になるファラデーケージの縦
断面図（イ），その平面図（ロ）および下面図（ハ）で
ある。FIG. 2 is a vertical sectional view (a), a plan view (b) and a bottom view (c) of a Faraday cage according to an embodiment of the present invention.
第１図と共通部分に同一符号を使用した第２図におい
て、31はセラミックにてなる基板、32は基板31の中心部
に貫通するテーパ孔、33はテーパ孔32の内面およびその
開口部に被着した金属膜、34はテーパ孔32の大径側の開
口を塞ぎ金属膜33と接続形成させた導電体であり、基板
31の上面に形成し金属膜33と一体に形成した条片34に
は、スイッチ26が接続されるようになる。In FIG. 2 in which the same reference numerals are used for the same parts as in FIG. 1, 31 is a substrate made of ceramics, 32 is a tapered hole penetrating the center of the substrate 31, and 33 is an inner surface of the tapered hole 32 and its opening. The deposited metal film, 34 is a conductor that is formed by connecting the large diameter side opening of the tapered hole 32 to the metal film 33, and is formed on the substrate.
The switch 26 is connected to the strip 34 formed on the upper surface of 31 and integrally formed with the metal film 33.
かかるファラデーケージにおいて、電子ビームパルス６
をテーパ孔内に照射し発生した２次電子27は、金属膜33
および導体層34に囲まれた空洞内に閉じ込められる。そ
こで、該ファラデーケージが発生し閉じ込められた２次
電子の電圧を、配線電圧測定と同じように電圧測定回路
９（第４図）にて測定する。すると，該電圧と既知なる
容量値およびピークビーム電流、ならびに電子ビームパ
ルス６の照射時間から、電子ビームパルス６のパルス幅
を算出することができる。In such a Faraday cage, an electron beam pulse 6
Secondary electrons 27 generated by irradiating the inside of the taper hole with the metal film 33.
And is enclosed in a cavity surrounded by the conductor layer 34. Therefore, the voltage of the secondary electrons trapped due to the Faraday cage is measured by the voltage measuring circuit 9 (FIG. 4) in the same manner as the wiring voltage measurement. Then, the pulse width of the electron beam pulse 6 can be calculated from the voltage, the known capacitance value and the peak beam current, and the irradiation time of the electron beam pulse 6.
なお、微小に構成される本発明のファラデーケージは前
記空洞の寸法が数100μｍオーダである。そこで、第１
図に示すような段付き孔23は、小径部と大径部とをそれ
ぞれ別工程で明ける煩わしさと困難さを伴うが、第２図
のテーパ孔32はレーザビームや電子ビームを利用し、１
工程で容易に明けることができる。In the Faraday cage of the present invention, which is minutely structured, the size of the cavity is on the order of several 100 μm. So the first
Although the stepped hole 23 as shown in the drawing involves the trouble and difficulty of revealing the small diameter portion and the large diameter portion in separate steps, the tapered hole 32 in FIG. 2 uses a laser beam or an electron beam.
Can be easily opened in the process.
第３図（イ）〜（ヘ）は第２図に示すファラデーケージ
を作成する主要工程を工程順に示す側面図である。3 (a) to 3 (f) are side views showing main steps in order of steps for producing the Faraday cage shown in FIG.
第３図（イ）において、厚さ300〜500μｍ程度の基板31
の上面、または該上面よりもやや上方に焦点合わせした
穿孔用電子ビーム（またはレーザビーム）41を照射す
る。すると、電子ビーム（またはレーザビーム）41は、
基板31の内部では図中に点線で示す如く、下方に広がる
広がるエネルギ分布となる。In FIG. 3 (a), a substrate 31 having a thickness of about 300 to 500 μm
The electron beam (or laser beam) 41 for perforation focused on the upper surface of the above or slightly above the upper surface is irradiated. Then, the electron beam (or laser beam) 41 is
Inside the substrate 31, as shown by the dotted line in the figure, there is an energy distribution that spreads downward.
その結果、電子ビーム（またはレーザビーム）41を照射
し明けられた孔は第３図（ロ）に示すように、上面の開
口径が50〜100μｍであり下面の開口径が300〜500μｍ
のテーパ孔32になる。As a result, the holes exposed by the electron beam (or laser beam) 41 have an opening diameter of 50 to 100 μm on the upper surface and an opening diameter of 300 to 500 μm on the lower surface, as shown in FIG.
The taper hole 32 becomes.
次いで、第３図（ハ）に示す如く、テーパ孔32の内面
と、基板31の上面および下面に無電界めっきで導体膜42
を被着したのち、該上面および下面に被着したその不要
部を除去して第３図（ニ）に示す如く、テーパ孔32の内
部と開口部周辺に被着する金属膜33、およびスイッチ26
を接続するための条片34とが一体に形成される。Next, as shown in FIG. 3C, the conductor film 42 is formed on the inner surface of the tapered hole 32 and the upper and lower surfaces of the substrate 31 by electroless plating.
After depositing, the unnecessary portions deposited on the upper surface and the lower surface are removed, and as shown in FIG. 3D, the metal film 33 deposited inside the tapered hole 32 and around the opening, and the switch. 26
And a strip 34 for connecting the two are integrally formed.
次いで、第３図（ホ）に示す如くテーパ孔32の大きい開
口部に導電性ペースト43を塗着させると、導電性ペース
ト43はテーパ孔32が小径であることで該開口部を塞ぐよ
うに付着し、それを焼成すると第３図（ヘ）に示すよう
に、導電体25が形成されマイクロファラデーケージが完
成する。Next, as shown in FIG. 3 (e), when the conductive paste 43 is applied to the large opening of the tapered hole 32, the conductive paste 43 closes the opening because the tapered hole 32 has a small diameter. When adhered and fired, a conductor 25 is formed and a micro Faraday cage is completed as shown in FIG.
以上説明したように本発明によれば、電子ビームのプロ
ーブ電流が10−12Ａ程度の微小値であっても、その測定
が安定化し、高密度に構成し高速度に動作する集積回路
等の信頼性を高めることになった効果がある。As described above, according to the present invention, even if the probe current of the electron beam is a minute value of about 10 −12 A, the measurement is stabilized, and the integrated circuit or the like which operates at high speed and has a high density can be obtained. It has the effect of increasing reliability.
第１図は本発明になるファラデーケージの基本構成を示
す縦断面図、 第２図は本発明の一実施例になるファラデーケージの縦
断面図（イ），その平面図（ロ），および下面図
（ハ）、 第３図（イ）〜（ヘ）は第２図に示すファラデーケージ
を作成する主要工程を工程順に示す側面図、 第４図は前記電子ビーム装置の構成と従来の電子ビーム
パルス幅測定系の概要を示す側面図、 である。 図中において、 22,31は基板、 23は透孔、 24は金属膜、 25は導電体、 32はテーパ孔、 を示す。FIG. 1 is a vertical cross-sectional view showing the basic structure of a Faraday cage according to the present invention, and FIG. 2 is a vertical cross-sectional view (a), a plan view (b), and a bottom view of a Faraday cage according to an embodiment of the present invention. FIG. 3C and FIGS. 3A to 3F are side views showing the main steps of manufacturing the Faraday cage shown in FIG. 2 in the order of steps, and FIG. 4 is the configuration of the electron beam apparatus and a conventional electron beam. FIG. 3 is a side view showing an outline of a pulse width measurement system. In the figure, 22 and 31 are substrates, 23 is through holes, 24 is a metal film, 25 is a conductor, and 32 is a tapered hole.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 尾崎 一幸 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 大窪 和生 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuyuki Ozaki 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor, Kazuo Okubo 1015, Kamedotachu, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited
Claims (5)
口より大きい透孔（23）を開けた基板（22）、 該透孔（23）の内面に被着した金属膜（24）、 該金属膜（24）と接続し該透孔（23）の大径側開口を塞
ぐ導電体（25）を具えてなることを特徴とするファラデ
ーケージ。1. A substrate (22) made of an insulating material, wherein one opening has a through hole (23) larger than the other opening, and a metal film (24) adhered to the inner surface of the through hole (23). A Faraday cage characterized by comprising a conductor (25) which is connected to the metal film (24) and closes the large diameter side opening of the through hole (23).
を特徴とする前記特許請求の範囲第１項記載のファラデ
ーケージ。2. The Faraday cage according to claim 1, wherein the substrate (22) is made of ceramic.
とを特徴とする前記特許請求の範囲第１項記載のファラ
デーケージ。3. The Faraday cage according to claim 1, wherein the through hole (23) is a tapered hole (32).
形成してなることを特徴とする前記特許請求の範囲第１
項記載のファラデーケージ。4. The first claim according to claim 1, wherein the tapered hole (32) is formed by laser beam processing.
Faraday cage described in paragraph.
成してなることを特徴とする前記特許請求の範囲第１項
記載のファラデーケージ。5. The Faraday cage according to claim 1, wherein the tapered hole (32) is formed by electron beam processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176405A JPH0664153B2 (en) | 1985-08-10 | 1985-08-10 | Faraday cage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176405A JPH0664153B2 (en) | 1985-08-10 | 1985-08-10 | Faraday cage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6236565A JPS6236565A (en) | 1987-02-17 |
| JPH0664153B2 true JPH0664153B2 (en) | 1994-08-22 |
Family
ID=16013099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60176405A Expired - Lifetime JPH0664153B2 (en) | 1985-08-10 | 1985-08-10 | Faraday cage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0664153B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132672B2 (en) * | 2004-04-02 | 2006-11-07 | Varian Semiconductor Equipment Associates, Inc. | Faraday dose and uniformity monitor for plasma based ion implantation |
-
1985
- 1985-08-10 JP JP60176405A patent/JPH0664153B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6236565A (en) | 1987-02-17 |
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