JPH0661144A - Apparatus and method for manufacture of diamond semiconductor device - Google Patents

Abstract

PURPOSE: To vapor-deposit a diamond or diamond-like coating doped with desired dopant on a substrate by separately pulse-controlling the duration times of a donor arc-beam and an acceptor arc-beam. CONSTITUTION: The system has a vacuum reactor chamber 32 having a main plasma arc gun 36 for generating a mean beam 34. The doping is made by a donor plasma arc gun 40 and acceptor arc gun 42. Both guns 40, 42 generate a donor beam 48 and acceptor beam 50 directed on the respective substrates mounted on holders 54 and are independently operated by an electric device. A time measuring oscillator 54 gives limited outputs to a donor control electric device 58 for operating the donor gun 40, the donor gun re-igniter 62 and the donor control adjuster 66. A similar circuit including an acceptor control electronic device 60 operates the acceptor gun 42.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diamond vapor deposition method and apparatus, and more particularly to the production of a diamond semiconductor by plasma arc controlled vapor deposition.

[0002]

BACKGROUND OF THE INVENTION The potential benefits of using diamond materials for various applications such as diamond semiconductors have fueled that research. And due to its great potential, many studies have been done on the problem of making doped diamond devices. Most of the previous development work has focused on chemical vapor deposition (CVD), but with unsatisfactory results.

The appearance of apparently pure and transparent SP ³ , cubic carbon crystals by arc vapor deposition is described in US Pat. Nos. 3,625,848, 3,831,451 and 3,3. No. 838,031 and is technically disclosed by the method and apparatus. These U.S. patents relate to arc vapor deposition methods and apparatus and vapor deposition of ferroelectric materials and show that the production of 1 mm laser cut transparent single crystalline diamond is facilitated.

The above applications for diamond take advantage of the unique properties of crystallized carbon. These properties include extremely high hardness, durability and unmatched ability to conduct heat and electricity. However, commercially produced diamonds have not been able to take advantage of these excellent properties until the last decade or so, since only small pieces were obtained in a costly manner.

However, recently, a technique has been found that can form a thin film of diamond on a substrate of silicon, metal, ceramics, etc., or even on natural diamond, and commercialization is carried out by utilizing these new techniques. There is widespread industrial competition to first produce commercially available diamond coated products.

Almost all of these techniques are directed towards the development of diamond-based semiconductor devices. Diamond, which has a high thermal conductivity, has a very high heat dissipation property, has properties very close to those of a silicon chip and does not overheat. This means that the diamond semiconductor has excellent properties that enable faster movement of electrons due to increased operating speed.

[0007]

However, there are obstacles that must be overcome in the production of practical diamond semiconductor devices. First, semiconductors require a continuous single crystal of diamond rather than discrete small crystals (polycrystalline film) as grown in the first technology. Also,
It is not easy to infiltrate a hard diamond with a dopant, which is an impurity intentionally added to make a material a semiconductor. Dopants must be added during the deposition process.

Conventional etching methods used in patterning silicon wafers cannot be applied to diamond. Finally, diamond coatings must be grown on substrates that are economical for large scale production.

[0009] The excellent carrier mobility, thermal and photoconductivity, hardness, heat resistance and operability at high voltage of doped diamond crystals enable useful new generation electronic devices and are therefore practical. It is important to continue to move towards the manufacture of advanced diamond semiconductor devices.

The present invention has been made to solve the above problems, and an object thereof is to provide an apparatus for manufacturing a diamond semiconductor device and a manufacturing method thereof.

[0011]

An apparatus of the present invention for solving the above problems is a vacuum reaction chamber, a plurality of plasma arc guns installed in the vacuum reaction chamber, and a substrate held in the vacuum reaction chamber. A means for irradiating the substrate on the substrate holder with an arc beam from the plurality of plasma arc guns, and a pulse of controlled time to each of the plurality of plasma arc guns. It is characterized by a means for precisely controlling the deposition of a substance on the substrate as a function of time. Further, the method of the present invention uses the above apparatus to produce a diamond semiconductor device, in which a carbon arc beam is generated from at least one plasma arc gun, and at least another one is used.
Generating a donor arc beam from one plasma arc gun, generating an acceptor arc beam from at least one other plasma arc gun, and individually controlling the duration of beam generation in each plasma arc gun. It is characterized by depositing a diamond or diamond-like coating doped with a desired amount of a desired dopant on a substrate.

[0012]

The present invention provides an apparatus and method for producing a diamond semiconductor device having a diamond film mainly having a three-dimensional structure by the precisely controlled doping as described above.

The semiconductor typically has a heavily doped inlay (buried layer) on the substrate. For example, an insulated gate field effect transistor (IGFET) similar to that normally found in microstructures of integrated circuits having N-type heavily doped inlays on a P-type substrate. The source, gate and drain terminals are obtained by coating a conductive material on an insulating layer continuous to the heavily doped inlay. According to the method of the present invention, such a semiconductor can be produced because mixing can be forced by using an arc evaporation method for a substance whose alloy has not been known so far because it cannot be mixed. Because of this capability, arc evaporation is suitable for coating a doped carbon crystal film on a doped substrate, wherever a pure cubic Cu ³ structure film for insulation is desired. Can be formed.

In the method and apparatus of the present invention, the main carbon beam can be generated by placing a pure carbon electrode on the main beam gun in a manner similar to that described in the above-referenced US patents. Doping is performed by an auxiliary beam gun with electrodes of acceptor and donor materials, respectively. In the manufacturing system of the present invention, a diamond-like substance of carbon carbide is controlled and deposited on a substrate for a diamond semiconductor device. Each plasma arc gun, including the main gun, acceptor gun and donor gun, is individually controlled to control the deposition of each material.

Since the amount of dopant used for mixing is usually difficult to control directly by the amount of arc current, arc deposition is controlled by controlling the time interval of the DC pulse applied to the dopant gun. . There are several electrical methods for this. The preferred method is to indicate the desired energization time or pulse current time. This is to store a preset count number in a register. At the start or restart of manufacturing, the output from the timekeeping oscillator is placed in a second register at each current pulse to the dopant gun. The count of the second register is repeatedly compared with the preset count number of the register, and when the two counts match, a stop pulse is generated to cut off the arc current. The disconnection of the pulse starts the counting of the stop counting pulse in the fourth register, and the count is repeatedly compared with the preset count number in the third register which sets the desired stop time, and the counting of the third and fourth count pulses is repeated. When the register values match (count difference becomes zero), pulse is issued to restart the cycle. A series of operations of these arc guns are shown below.

1. Arc ignition 2. Apply arc current to the electrode gun.

3. The timing of the clock oscillator is started at the same time when the arc current is applied.

4. The preset count number of the register is compared with the clock count number.

5. When the time count number and the preset register count number match, a pulse is emitted to stop the current supply to the electrode gun.

6. Start time counting of the fourth register.

7. The count number stored in the fourth register for counting the number of time counting pulses from the time counting oscillator is compared with the stop time pulse preset in the third register.

8. The start comparator emits a pulse to restart the cycle and reignite the arc when the preset stop time pulse in the third register matches the count in the fourth register.

In the diamond semiconductor manufacturing system of the present invention, a series of precise time controls provide an easily controlled current pulse, which results in a series of dopant plasmas for a workpiece (eg, a substrate on a holder). Is generated. Since each pulse is controlled on the high pulse rate side, control is limited by the time required for arc ignition. Numerical control of doping is performed by storing a desired count number in a control register, so computer control is also possible.

As another doping means for reducing the limitation on the high pulse rate side of the control range, there is a method of using an accelerated ion beam of desired doping ions to embed dopant atoms in the surface of the diamond layer. In this case, the diamond layer has an inherently high hardness and thus requires a high energy beam, and under certain conditions the ion beam accelerator must be replaced by one or more plasma arc guns as described above.

The diamond coating coating on silicon can be replaced with a conventional silicon on sapphire (SOS) tip device. In the silicon on sapphire chip, silicon is always coated on sapphire, whereas in the diamond coating process diamond is coated on silicon. Then, the chip is turned over and the diamond is used as a substrate. Similarly, a wafer obtained by coating a metal conductive material such as copper or gold with diamond can be obtained. When these are used as a wafer, a photomask is applied to the surface of gold, copper or other metal, and a complicated conductor pattern is etched or electron beam processed into the metal coating so as to leave practically fine metal conductor parts on the diamond surface. .
This method is particularly effective for manufacturing complex semiconductor devices such as gate arrays, memory chips and microprocessor chips.

In general, it is difficult to apply other materials to the diamond material, so that it is difficult to use the conductor wire. In such a case, it is effective to provide a very thin layer of pure amorphous carbon (C12) or pyrolytic graphite by an ion beam accelerator through a pattern etched in a photomask shape. The ultra-thin layer of pure carbon acts as a kind of cement or adhesive to hold the metal to the diamond. Generally, graphite is considered to be a lubricant, but its behavior changes when it becomes a very thin film. It is considered that this is because the crosslinks formed by the carbon atoms fit into the surface of the diamond crystal.

The plane of preferred thermal conductivity due to the pyrolytic graphite layer is controlled by biasing the target with a fixed (or computer controlled variable) direct bias potential. This allows the thermal conductivity of the pyrolytic graphite layer to maximize heat dissipation.

An auxiliary arc gun used to inject the dopant vibrates the substrate holder by sonic or ultrasonic frequencies to obtain a smooth dispersion and uniform inflow over the diamond surface. Mechanical vibrations of the substrate and holder are provided by a barium titanate plate or similar transducer driven by a power oscillator.

Many modifications are possible in the design of the electrical control path to cycle the dopant arc. As a result, implantation of the dopant into the film is somewhat slower than the formation of the main crystal. The doping rate in the resulting film can be controlled by varying this rate.

As a practical matter, in many cases only one doping gun is used at a time. Further, formation of a film layer for manufacturing an integrated circuit requires conversion of a main part and a plasma gun, reduction of output for cleaning a viewing window, and opening of a vacuum reaction chamber. . In addition, an arc gun of almost pure metal is used for vapor deposition of a conductive metal for connecting an external circuit and a diamond tip.

Wafer processing such as cutting, slicing, and etching may be carried out by a method such as a laser trimming method or an electron beam processing method currently used, which is carried out on a chip in the same vacuum reaction chamber by means known in the semiconductor technology. it can.

An important factor in achieving proper carbon crystallization on a substrate is the substrate temperature. In the present invention, the substrate temperature is controlled by direct application of microwave beam energy towards the target substrate holder. The substrate temperature is controlled by detecting the temperature with a temperature sensor installed behind the substrate holder and transmitting information to the temperature control electronic device. The electronic device compares the temperature with a preset control value and issues a command to the microwave beam energy power source radiating to the target to turn the power on and off and switch the power level. Substrate temperature of about 750-800 ° F. (about 400-430 ° C.) for proper SP ³ carbon crystallization
I found that it should be in the range of.

Another important factor in controlling the crystal deposition process is the presence of a small amount of hydrogen in the reaction chamber.
Hydrogen itself does not enter the crystal but acts like a kind of catalyst, helping to make the crystal an SP ³ structure rather than an SP ² structure. The partial pressure of hydrogen is kept low enough to keep the reaction chamber substantially vacuum. If a graphite (or amorphous graphite) layer for bonding is formed,
Hydrogen is first removed from the vacuum reaction chamber.

[0034]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to illustrated embodiments.

FIG. 1 shows a typical N-channel enhanced type insulated gate field effect transistor (IGFET).
FIG. The microstructure of this transistor is almost the same as the microstructure of an integrated circuit (IC). However, this transistor is made from cubic carbon instead of cubic silicon, and the device is a p-type carbon carbide substrate 12 and a lightly doped trivalent material such as boron, gallium, indium, thallium or aluminum. It has an n-type buried layer 14 heavily doped with a pentavalent donor material such as arsenic, phosphorus, antimony, bismuth or nitrogen. Top layer 16 is an undoped diamond-like carbon carbide or silicon dioxide insulating layer.

The terminals are metal conductor layers designated 18, 20 and 22 made of a material such as gold, silver, copper or tin. A source terminal 24 and a drain terminal 26 are respectively connected to the metal layers 18 and 22, and a gate terminal 28 is provided on the metal layer 20. When a source / drain voltage is connected to terminals 24 and 26 and a gate metal layer terminal 28 is used, the semiconductor device exhibits a very high electrical resistance. When the voltage of the power supply 24 applied to the gate 28 is positive, excess holes in the substrate 12 are repelled from the gate portion 30 and electrons are attracted to the portion to form a conductive path between the power supply terminal 24 and the drain terminal 26. When formed, the electric resistance is remarkably reduced and the electric conduction occurs. This action is so rapid that switching and linear amplification occurring in the high frequencies of the radio spectrum below the audible amplitude are possible. It is possible to take the form of many other semiconductors in the same general manner, and the insulated gate FET shown in FIG. 1 is a selection of typical ones of many active devices on an integrated circuit chip. Nothing more than.

A schematic of a system for manufacturing a diamond-like semiconductor device is shown in FIG. A feature of the arc vapor deposition method shown in FIG. 2 is that it is immiscible and can force the mixing of materials for which alloys are not previously known. When from this it has the characteristics thus arc vapor deposition method, a film layer of doped doped onto a substrate that is a single crystal of carbon is deposited to form a pure cubic SP ³ carbon film for insulating the desired It is suitable for

The system shown in FIG. 2 has a vacuum reaction chamber 32 with a main plasma arc gun 36 for generating a main beam 34. The main carbon beam 34 is generated by placing a pure carbon electrode 38 in a main beam gun 36 in a manner similar to that described in the aforementioned U.S. patent.

Doping is performed by the donor plasma arc gun 40 and the acceptor arc gun 42. A pentavalent donor material 44 is arranged in the donor gun 40, and a trivalent acceptor material 46 is arranged in the acceptor gun 42. The donor gun 40 and the acceptor gun 42 are directed toward the substrate 52 mounted on the holder 54, respectively.
To occur.

The main beam gun 36, the donor gun 40 and the acceptor gun 42 are all independently operated by electronic devices as described below. Since it is difficult to directly control the arc current during operation, the control is performed by changing the time of the DC pulse supplied to the plasma arc gun. This control is accomplished by electronically controlling the start (or restart) of the process at each current pulse to the plasma arc gun. Timing oscillator 56 provides a limited output to donor control electronics 58, donor gun reignition device 62 and donor control regulator 66 for operating donor gun 40. A similar circuit consisting of acceptor control electronics 60, acceptor gun reignition supply 64 and acceptor current regulator 68 operates acceptor gun 42. Electric power is supplied from the DC power source 72 to the donor current adjusting device 6
6, supplied to the acceptor current adjusting device 68 and the main spark supply device 70.

FIG. 3 shows a typical plasma arc gun / ion beam control electronics using three individually controlled plasma arc guns. The arc electrodes 74, 76 and 78 are each made of a non-deposited material. These are pure carbons in the main beam gun 36 and carbons in the donor gun 40 and the acceptor gun 42, respectively, with the selected dopant material. Precise control of the deposited material as a function of time is achieved by providing as many arc pulses for each plasma arc gun as required in response to external control. External control can be performed manually or by computer program control repeatedly created by the same semiconductor device.

A plasma arc gun having a structure similar to that described in the above-mentioned US Pat. No. 3,625,848 is used. FIG. 3 shows a schematic diagram and a schematic block diagram of such a plasma arc gun. An auxiliary ignition electrode 78 is used to ignite each arc. The electrodes are made of materials similar to those used for the source electrode material in electrodes 74, 76 and 80. Once the arc is ignited, the main arc electrode 74 continues to arc for a unit pulse for as long as the main arc power regulator 82 turns on the arc power switch. When the arc time and ignition frequency control circuit 84 signals the end of the pulse by sending an off signal, the arc power supply is switched off and the arc is extinguished. The next pulse is the main arc power regulator 82
It is started when the ON signals are simultaneously sent to both the auxiliary arc controller 86 and the auxiliary arc controller 86. The length of on-time and off-time are set by potentiometers 88 and 90, respectively. The pulse repetition rate is potentiometer 92.
Set by. The on-time and off-time are limited as a result of the pulse repetition rate, and the pulse repetition rate is also limited by the time function required to ignite and extinguish the arc. Generally, the repetition rate is about 3-4 / sec to 3-4 /
Pulse times of hundreds of milliseconds can be achieved when near the minute.

The ignition power supply 94 for the auxiliary arc regulator 86 is a DC power supply. Timing oscillator 9
8. A control electronics power supply 96 is used for the arc time and ignition frequency control circuit 84. Each plasma arc gun has a separate arc power on / off switch that applies power to the mains power supply 102 so that one or more guns can be simultaneously started at any time. . Lens electrode 10 for beam formation
4 requires empirical design work, but FIG. 3 shows a type of flared horn.

When three guns as shown in FIG. 2 are used, various control parameters connected to the process control computer are used, and repeated use of that program stabilizes the appropriate semiconductor device film. Can be obtained.

One of the key points for obtaining suitable carbon crystals on the substrate is the substrate temperature. In FIG. 2, the temperature control means is the microwave energy transfer antenna 106.
From a microwave energy beam emitted from a target toward a holder of a substrate. Substrate holder 5
The temperature sensor 108 installed behind the sensor 4 detects the temperature and transmits the information to the temperature control electronic device 110 described later. In the temperature control electronic device 110, the temperature is compared with a value preset by a computer or by a computer, and a command to switch power on / off and a power level is appropriately transmitted to the microwave power source 112 and the target object is transmitted from the antenna 106. Emit a microwave beam to.
In this way, precise temperature control of the substrate 52 is performed. The most preferred substrate temperature range for producing the preferred crystallized SP3 carbon is about 750 to about 750 as described above.
It is in the range of 800 ° F (about 400 to 430 ° C).

Details of the temperature control subsystem are shown in FIG. As seen in FIG. 4, the microwave transmitter 1
The energy beam of 14 is temperature pre-amplifier and adjustment based on the voltage difference between the voltage value preset in the controller 124 and the detected voltage value converted from the temperature by the temperature sensor installed behind the substrate holder 118. As a result of the on / off switching being performed by the power control microwave switching circuit in response to the signal generated by the container 122, the substrate 116 and its holder 118 in the vacuum reaction chamber 32 (FIG. 2) are radiated. The load power is individually supplied through the switch 126, the power supply source 124, and the microwave power switch 120. The energy of the microwave transmitter 114 is radiated as a beam from the microwave antenna 115 to the substrate 116.

In the case of the present invention, an auxiliary plasma arc gun is used to implant the dopants, by vibrating the substrate holder by sonic or ultrasonic vibrations to obtain a smooth dispersion on the diamond surface. A uniform inflow can be obtained. Barium titanate lumps or similar energy converting materials driven by power oscillators can be used to cause mechanical vibrations, as detailed in FIG.

Oscillation, as seen in FIG. 5, is carried out by both ultrasonic or mechanical vibrations and electrical vibrations (obtained by superimposing an AC voltage on the deflection DC voltage for accelerating the beam). You can The variable frequency ultrasonic oscillator 130 is a potentiometer 13.
2 sets the frequency. An alternating voltage is sent to the regulator 134, where the amplitude of the vibration is set by the controller 136, and the applied ultrasonic power is applied to the substrate swing energy converter 14.
By repeating the expansion and contraction of 0, the substrate holder 118 is driven back and forth to vibrate. When the oscillating power on / off switch 144 is in the on state, the oscillating subsystem power supply 142 supplies power energy to all subsystems. The power energy from the power supply device 142 is supplied to the target deflection / electro-oscillation voltage source 146 to which the deflection DC voltage is set by the potentiometer controller 148.

The oscillating AC voltage frequency can be set by potentiometer controller 150 and the "amplitude" of the target oscillating voltage can be set by potentiometer 152. Such a numerical determination can be similarly performed in ultrasonic vibration. The DC deflection voltage and the superposed AC oscillation voltage are applied between the ion gun raw materials, and the speed of the ion beam can be alternately increased or decreased to achieve more uniform and smooth deposition of the material on the substrate. .

The above two swinging methods are applied to the substrate holder 118 individually or independently depending on the purpose.
Above, a unique plasma arc spray system for the production of diamond, doped diamond or diamond-like coatings on substrates by pulsed plasma technology has been described.

[0051]

Industrial Applicability As described above, according to the present invention, a diamond semiconductor device is industrially produced by vapor-depositing a diamond or a diamond-like single crystal film precisely doped with a desired amount of a desired dopant on a substrate. It can be easily obtained on a scale.

Further, according to the method of the present invention, even if the substrate to be used is a substrate sensitive to temperature, it can be manufactured without raising the temperature of the substrate so much, so that its application range is wide. A substrate material that can be easily deposited on such a thin film of diamond without deterioration of quality is zinc sulfide (ZnS).
S), zinc selenide (ZnSe), and the material obtained by this is used as an excellent laser component.

The system according to the invention has also been used in the manufacture of crystalline carbon pn junction diode products, hence 10
Rectifiers can be created that can withstand high temperatures near 00 to 1500 ° F (540 to 820 ° C). In addition, the system of the present invention has an excellent feature that a high drain voltage can be operated, a high gain can be obtained without severely loading a signal voltage, and the device can be operated at a higher temperature than that obtained by a silicon device. It is possible to manufacture the insulated gate field effect transistor which it has, and also to manufacture diamond-like integrated circuit chips such as light emitting diodes and diodes for semiconductor lasers.

Furthermore, according to the present invention, a very highly transparent thick diamond film can be obtained, so that a new device such as an optical converter based on the polarization effect of an electric field on a ray passing through a crystal lattice can be obtained. It is possible to obtain, and by utilizing this characteristic, new kinds of high power devices, photoelectric coupling devices, conversion devices, scanning or detection devices, etc. can be obtained by diamond semiconductors,
In addition, it can be used for various semiconductor devices that make use of the excellent characteristics of diamond-like films, and its utility value is high.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a typical N-channel enhancement type insulated gate field effect transistor.

FIG. 2 is a schematic diagram of a system for controlling the deposition of diamond semiconductor device manufacturing material.

FIG. 3 is a schematic block diagram of a circuit for changing a pulse time directly used in a donor plasma arc gun or an acceptor plasma arc gun.

FIG. 4 is a schematic block diagram of a temperature control system in the semiconductor vapor deposition system of the present invention.

FIG. 5 is a schematic block diagram of a vibration system in the semiconductor vapor deposition system of the present invention.

[Explanation of symbols]

 12 carbon carbide substrate 14 N type buried layer 18, 20, 22 conductor metal 24 power supply terminal 26 drain terminal 28 gate terminal 32 vacuum reaction chamber 34 main (carbon) beam 36 main plasma arc gun 38 pure carbon electrode 40 donor (plasma arc) ) Gun 42 Acceptor (Plasma Arc) Gun 44 Donor Material 46 Acceptor Material 48 Donor Beam 50 Acceptor Beam 52 Substrate 54 Substrate Holder 56 Timing Oscillator 58 Donor Control Electronic Device 60 Acceptor Control Electronic Device 62 Donor Gun Reignition Device 64 Acceptor Gun Re-ignition device 66 Donor current regulator 68 Acceptor current regulator 70 Main spark generator 72 DC power source 74, 76, 78, 80 Arc electrode 82 Power converter 84 Arc time / ignition frequency control circuit 86 Complement Auxiliary arc converter 88, 90, 92 Potentiometer 94 Ignition power supply device 96 Power supply device for control electronic device 98 Timing oscillator 102 Main power supply device 114 Microwave transmitter 116 Substrate 118 Substrate holder 120 Microwave power switch 122 Temperature before On-board amplifier / regulator 124, 136 Potentiometer 128 Microwave power supply 130 Variable amplitude microwave oscillator 138 Energy conversion material drive amplifier 140 Substrate vibration energy conversion material 142 Vibration system power supply device 146 Target deflection / electric vibration power supply 148 , 150, 152 potentiometer

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 29/784 33/00 A 7514-4M H01S 3/18

Claims (2)

[Claims] 1. A vacuum reaction chamber, a plurality of plasma arc guns installed in the vacuum reaction chamber, a means for holding a substrate in the vacuum reaction chamber, and an arc beam from the plurality of plasma arc guns on the substrate holder. Means for irradiating the substrate, and means for precisely controlling the deposition of a substance on the substrate as a function of time provided by applying a pulse of controlled time to each of the plurality of plasma arc guns. Diamond semiconductor device manufacturing apparatus including. 2. When manufacturing a diamond semiconductor device by using the apparatus of claim 1, a carbon arc beam is generated from at least one plasma arc gun, and a donor arc beam is generated from at least one other plasma arc gun. And at least one other plasma arc gun to generate an acceptor arc beam, and by individually pulsing the generation of the beam in each plasma arc gun, the desired doped diamond or A method for manufacturing a diamond semiconductor device, which comprises depositing a diamond-like coating.