JP3177305B2 - Semiconductor device manufacturing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for depositing diamond, and more particularly to the production of diamond semiconductor by plasma arc controlled deposition.

[0002]

BACKGROUND OF THE INVENTION The potential benefits of using diamond materials for various applications, such as diamond semiconductors, are driving research. There has been much research into the problem of producing doped diamond devices for its great potential. Most of the conventional development research has focused on chemical vapor deposition (CVD), but has not produced satisfactory results.

It has been found that apparently pure, transparent, SP ³ , cubic carbon crystals can be obtained by arc evaporation in US Pat. Nos. 3,625,848, 3,831,451 and 3,311. 838,031 by the method and apparatus. These U.S. patents relate to arc deposition methods and apparatus and the deposition of ferroelectric materials, and show that the production of 1 mm laser cut, transparent, single crystalline diamond is facilitated.

[0004] The above uses of diamond take advantage of the unique properties of crystallized carbon. These properties include extremely high hardness, durability and unmatched ability to conduct heat and electricity. However, commercially produced diamonds have not been able to take advantage of these superior properties until the last decade or so, since only small pieces are obtained in a costly manner.

However, recently, techniques have been found that can form a diamond thin film on a substrate made of silicon, metal, ceramics or the like, or even on natural diamond. There is widespread industrial competition to first produce commercially available diamond coated products.

[0006] Almost all of these techniques are directed to the development of semiconductor devices using diamond as a substrate. Diamond having high thermal conductivity has very high heat dissipation, and has properties very close to those of a silicon chip and does not overheat. This means that diamond semiconductors have excellent properties that allow faster electron transfer due to increased operating speed.

[0007]

However, there are obstacles that must be overcome in the production of practical diamond semiconductor devices. First, semiconductors require a continuous single crystal of diamond, rather than discrete small crystals (polycrystalline films) as grown by the first techniques. Also,
It is not easy to infiltrate hard diamond with a dopant which is an impurity intentionally added to make the material into a semiconductor. Dopants must be added during the deposition process.

[0008] Conventional etching methods used in patterning silicon wafers cannot be applied to diamond. Finally, diamond coatings must be grown on substrates that are economical for large-scale production.

The excellent carrier mobility, thermal and photoconductivity, hardness, heat resistance and operability at high voltage of doped diamond crystals enable a useful new generation of electronic devices and are practical. It is important to keep moving forward with the production of a perfect diamond semiconductor device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide an apparatus for manufacturing a diamond semiconductor device and a method for manufacturing the same.

[0011]

According to the present invention, there is provided a vacuum reaction chamber, a plurality of plasma arc guns installed in the vacuum reaction chamber, and a substrate held in the vacuum reaction chamber. Means, means for irradiating the substrate on the substrate holder with an arc beam from the plurality of plasma arc guns, provided by applying a pulse of a controlled time to each of the plurality of plasma arc guns. It is characterized in that it comprises means for precisely controlling the deposition of a substance on the substrate as a function of time. In the method of the present invention, a carbon arc beam is generated from at least one plasma arc gun in manufacturing a diamond semiconductor device using the above-described apparatus, and the other at least one plasma arc gun is used.
Generating a donor arc beam from one plasma arc gun, generating an acceptor arc beam from at least one other plasma arc gun, and individually controlling the duration of beam generation in each plasma arc gun. It is characterized in that diamond or a diamond-like coating doped with a desired amount of a desired dopant is deposited on a substrate.

[0012]

According to the present invention, there is provided an apparatus and a method for manufacturing a diamond semiconductor device having a diamond film having a three-dimensional structure mainly by precisely controlled doping as described above.

Typically, semiconductors have a heavily doped inlay (buried layer) on a substrate. For example, an insulated gate field effect transistor (IGFET) similar to that commonly found in integrated circuit microstructures having an N-type heavily doped inlay on a P-type substrate. The source, gate and drain terminals are obtained by coating a conductive material on an insulating layer that follows the heavily doped inlay. According to the method of the present invention, such a semiconductor can be manufactured because the mixing can be forcibly performed by using an arc evaporation method for a substance whose alloy is not known so far because mixing is impossible. This performance arc deposition because there is is suitable for coating carbon crystal film doped with doped substrate, pure for as desired insulating anywhere, the film of cubic SP ³ structure Can be formed.

In the method and apparatus of the present invention, the primary carbon beam can be generated by placing a pure carbon electrode on the primary beam gun in a manner similar to that described in the above-referenced US Patent. Doping is carried out by auxiliary beam guns with electrodes of acceptor and donor materials, respectively. In the manufacturing system of the present invention, a diamond-like substance of carbon carbide is deposited while being controlled on a substrate for a diamond semiconductor device. Each plasma arc gun, including the main gun, the acceptor gun and the donor gun, is individually controlled and controls the material deposition, respectively.

Since the amount of dopant used for mixing is usually difficult to control directly by the amount of arc current, control of arc deposition is achieved by controlling the time interval between DC pulses applied to the dopant gun. . There are several electrical ways to do this. The preferred method is to indicate the desired energization time or pulse current time. This is to store a preset count number in a register. At the start or restart of production, the output from the timed oscillator is placed in a second register at each current pulse to the dopant gun. The count of the second register is repeatedly compared with the preset count of the register. When the two counts match, a stop pulse is generated to cut off the arc current. The stop of the pulse starts counting of the stop timing pulse in the fourth register, and the count is repeatedly compared with the count number preset in the third register in which the desired stop time is set, and the third and fourth pulses are counted. When the value of the register matches (count difference becomes zero), a pulse is transmitted to restart the cycle. A series of operations of these arc guns will be described below.

1. Arc ignition 2. Apply arc current to the electrode gun.

3. The timing of the clock oscillator is started simultaneously with the application of the arc current.

4. The preset count number of the register is compared with the time count number.

5. When the counted number matches the preset count of the register, a pulse is transmitted to stop the current supply to the electrode gun.

6. The timing count of the fourth register is started.

7. The count number stored in the fourth register for counting the number of timed pulses from the timed oscillator is compared with the stop time pulse preset in the third register.

8. The start comparator emits a pulse when the stop time pulse preset in the third register matches the count in the fourth register to restart the cycle and reignite the arc.

In the diamond semiconductor manufacturing system of the present invention, a series of precise time controls provide an easily controlled current pulse, which causes a series of dopant plasmas to be applied to a workpiece (eg, a substrate on a holder). Is generated. The control is limited by the time required for arc ignition since each pulse is performed on the high pulse rate side. Since numerical control of doping is performed by storing a desired count number in a control register, computer control is also possible.

As another doping means for reducing the restriction on the high pulse rate side of the control range, there is a method of using an accelerated ion beam of desired doped ions to embed dopant atoms in the surface of the diamond layer. In this case, the diamond layer has an inherently high hardness and requires a high energy beam, and under certain conditions the ion beam accelerator must be replaced by one or more plasma arc guns as described above.

For coating a diamond coating on silicon, a conventional silicon-on-sapphire (SOS) chip device can be used. Whereas silicon is always coated on sapphire in the silicon-on-sapphire sapphire chip, diamond is coated on silicon in a diamond coating process. Next, the chip is turned over and the diamond is used as a substrate. Similarly, a wafer in which a metal conductive material such as copper or gold is coated with diamond can be obtained. When these are used as wafers, a photomask is applied to the surface of gold, copper, or other metal, and a complex conductor pattern is etched or electron-beam processed in the metal coating to leave practically fine metal conductors on the diamond surface. .
This method is particularly effective for manufacturing complex semiconductor devices such as gate arrays, memory chips, and microprocessor chips.

In general, it is difficult to adhere other materials to a diamond material, so that it is difficult to use conductor wires. In such a case, it is effective to provide an ultra-thin layer of pure amorphous carbon (C12) or pyrolytic graphite by an ion beam accelerator through a pattern etched in a photomask shape. The ultra-thin layer of pure carbon acts as a kind of cement or adhesive to hold the metal on the diamond. Usually, graphite is considered to be a lubricant, but its behavior changes when it becomes very thin. This is considered to be because the bridge formed by the carbon atoms fits into the surface of the diamond crystal.

The plane having the preferred thermal conductivity due to the pyrolytic graphite layer is controlled by biasing the target with a fixed (or computer controlled variable) direct bias potential. Thereby, the thermal conductivity of the pyrolytic graphite layer can maximize heat dissipation.

An auxiliary arc gun used to inject dopants, in which the substrate holder is vibrated by sonic or ultrasonic frequencies in order to obtain a smooth dispersion and a uniform inflow on the diamond surface. The substrate and the holder are mechanically vibrated by a barium titanate plate or similar transducer driven by a power oscillator.

Many variations are possible in the design of the electrical control passages for cycling the dopant arc. Consequently, the implantation of dopant into the film is somewhat slower than the formation of the main crystal. The doping rate in the resulting film can be controlled by changing this rate.

As a practical matter, in most cases only one doping gun is used at a time. Furthermore, forming a film layer for manufacturing an integrated circuit requires converting the main part and the plasma gun, reducing the output to clean the viewing window, and opening the vacuum reaction chamber. . An almost pure metal arc gun is used for depositing a conductive metal for connecting the external circuit and the diamond chip.

Wafer processing such as cutting, slicing, and etching may be performed by a method that is performed on a chip in the same vacuum reaction chamber by means known in the semiconductor technology, such as a current laser trimming method or an electron beam processing method. it can.

An important factor in achieving proper carbon crystallization on the substrate is the substrate temperature. In the present invention, the substrate temperature is controlled by directly applying microwave beam energy toward the target substrate holder. The substrate temperature control is performed by detecting the temperature by a temperature sensor installed behind the substrate holder and transmitting information to a temperature control electronic device. The electronic device compares the temperature with a preset control value and issues an on / off control and power level switching command to the microwave beam energy source radiating to the target. The substrate temperature in performing the appropriate SP ³ carbon crystallized about 750 to 800 ° F (about four hundred to four hundred and thirty ° C.)
It was found that it was better to be within the range.

Another important factor in controlling the crystal deposition process is the presence of small amounts of hydrogen in the reaction chamber.
Hydrogen itself is not enter into the crystal acts as a sort of catalyst, it helps to SP ³ structure crystals than crystals SP ² structure. The partial pressure of hydrogen is kept sufficiently low and the reaction chamber is kept substantially in a vacuum. If a graphite (or amorphous graphite) layer is formed for bonding,
Hydrogen is removed directly from the vacuum reaction chamber.

[0034]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the illustrated embodiments.

FIG. 1 shows a typical N-channel enhanced insulated gate field effect transistor (IGFET).
FIG. The fine structure of this transistor is almost the same as that of an integrated circuit (IC). However, the transistor is made from cubic carbon instead of cubic silicon, and the device is a p-type carbon carbide substrate 12 lightly doped with a trivalent material such as boron, gallium, indium, thallium or aluminum and It has an n-type buried layer 14 which is heavily doped with a pentavalent donor material such as arsenic, phosphorus, antimony, bismuth or nitrogen. Upper layer 16 is an undoped diamond-like carbon carbide or silicon dioxide insulating layer.

The terminals are metal conductor layers indicated at 18, 20, and 22 made of a material such as gold, silver, copper or tin. There are a source terminal 24 and a drain terminal 26, respectively, connected to the metal layers 18, 22, and the metal layer 20 has a gate terminal 28. When a source / drain voltage is connected to terminals 24 and 26 and a gate metal layer terminal 28 is used, the semiconductor device exhibits very high electrical resistance. If the voltage of the power supply 24 applied to the gate 28 is positive, excess holes in the substrate 12 will be ejected from the gate portion 30 and electrons will be attracted to that portion to create a conductive path between the power supply terminal 24 and the drain terminal 26. Once formed, the electrical resistance is significantly reduced and the electrical conduction occurs. This action is so rapid that it enables switching and linear amplification occurring in the high frequency range of the radio spectrum below the audible amplitude. It is possible to take many other semiconductor forms in a similar general manner, the insulated gate FET shown in FIG. 1 being an example of a typical example of a large number of active elements on an integrated circuit chip. It's just

FIG. 2 schematically shows a system for producing a diamond-like semiconductor device. The feature of the arc deposition method shown in FIG. 2 is that it is impossible to mix, and it is possible to force the mixing of substances whose alloys are not known so far. When from this it has the characteristics thus arc vapor deposition method, a film layer of doped doped onto a substrate that is a single crystal of carbon is deposited to form a pure cubic SP ³ carbon film for insulating the desired It is suitable for

The system shown in FIG. 2 has a vacuum reaction chamber 32 with a main plasma arc gun 36 for generating a main beam 34. The main carbon beam 34 is generated by placing a pure carbon electrode 38 in a main beam gun 36 in a manner similar to that described in the aforementioned U.S. Patent.

The doping is performed by a donor plasma arc gun 40 and an acceptor arc gun 42. A pentavalent donor material 44 is disposed on the donor gun 40, and a trivalent acceptor material 46 is disposed on the acceptor gun 42. The donor gun 40 and the acceptor gun 42 respectively move the donor beam 48 and the acceptor beam 50 toward the substrate 52 set on the holder 54.
Occurs.

The main beam gun 36, donor gun 40 and acceptor gun 42 are all independently operated by electronic devices as described below. Since it is difficult to directly control the arc current during operation, the control is performed by changing the time of the DC pulse supplied to the plasma arc gun. This control is achieved by controlling the start (or restart) of the process at each current pulse to the plasma arc gun by an electronic device. Timed oscillator 56 provides limited output to donor control electronics 58, donor gun relight 62 and donor control regulator 66 to operate donor gun 40. A similar circuit comprising the acceptor control electronics 60, the acceptor gun reignition supply 64 and the acceptor current regulator 68 operates the acceptor gun 42. Power is supplied from the DC power supply 72 to the donor current controller 6.
6. Supplied to acceptor current regulator 68 and main spark supply 70.

FIG. 3 shows a typical plasma arc gun / ion beam control electronics using three individually controlled plasma arc guns. The arc electrodes 74, 76 and 78 are each made of a non-deposited material. These are pure carbon in the main beam gun 36 and carbon containing the selected dopant material in the donor gun 40 and the acceptor gun 42, respectively. Precise control of the material deposited as a function of time is achieved by providing as many arc pulses of each plasma arc gun as needed in response to external controls. External control can be performed manually or by computer program control repeatedly created by the same semiconductor device.

A plasma arc gun having a structure similar to that described in the aforementioned US Pat. No. 3,625,848 is used. FIG. 3 shows a schematic diagram and a schematic block diagram of such a plasma arc gun. An auxiliary ignition electrode 78 is used to ignite each arc. The electrodes are made of materials similar to those used for the raw electrode materials in electrodes 74, 76 and 80. Once the arc is ignited, the main arc electrode 74 continues the arc for a unit pulse as long as the main arc power regulator 82 turns on the arc power switch. When the arc time and ignition frequency control circuit 84 signals the end of the pulse by sending an off signal, the arc power supply is switched off and the arc is extinguished. The next pulse is the main arc power regulator 82
The process is started when the ON signal is sent to both the controller and the auxiliary arc controller 86 at the same time. The lengths of the on and off times are set by potentiometers 88 and 90, respectively. The pulse repetition rate is set by potentiometer 92
Is set by The on-time and off-time are limited as a result of the pulse repetition rate, and the pulse repetition rate is also limited by the time functions required to ignite and extinguish the arc. Generally, the repetition rate is about 3-4 / sec to 3-4 /
Pulse times of hundreds of milliseconds can be achieved when near the minute.

The ignition power supply 94 for the auxiliary arc regulator 86 is a DC power supply. Timed oscillator 9
8. An arc time and ignition frequency control circuit 84 uses a power supply 96 for control electronics. Each plasma arc gun has a separate arc power on / off switch that applies power through the main power supply 102 so that one or more guns can be started simultaneously, whenever needed. . Lens electrode 10 for beam formation
4 requires empirical design work, but FIG. 3 shows a type of flare horn.

When three guns as shown in FIG. 2 are used, various control parameters connected to the process control computer are used, and by repeatedly using the program, the appropriate semiconductor device film is stabilized. Can be obtained.

One of the key points for obtaining a suitable carbon crystal on the substrate is the substrate temperature. In FIG. 2, the temperature control means is a microwave energy transmitting antenna 106.
This is performed by a microwave energy beam emitted from the substrate toward a holder of a substrate which is a target. Board holder 5
The temperature sensor 108 installed behind the sensor 4 detects the temperature and transmits the information to a temperature control electronic device 110 described later. In the temperature control electronic device 110, the temperature is compared with a value set manually or by a computer in advance, and a command for appropriately turning on / off the power and switching the power level is transmitted to the microwave power source 112, and a target object is transmitted from the antenna 106. To radiate a microwave beam.
Thus, precise temperature control of the substrate 52 is performed. The most preferred substrate temperature range for producing the preferred crystallized SP3 carbon is from about 750 to 750, as described above.
It is in the range of 800 ° F (about 400-430 ° C).

FIG. 4 shows the details of the temperature control subsystem. As can be seen in FIG.
The 14 energy beams are temperature preamplified and regulated by a voltage difference between a voltage value preset in the controller 124 and a sensed voltage value converted from the temperature by a temperature sensor installed behind the substrate holder 118. As a result of the on / off switching performed by the power control microwave switch circuit in response to the signal generated by the unit 122, the radiation is radiated to the substrate 116 in the vacuum reaction chamber 32 (FIG. 2) and its holder 118. The load power is individually supplied via a switch 126, a power supply 124 and a microwave power switch 120. The energy of the microwave transmitter 114 is radiated from the microwave antenna 115 to the substrate 116 as a beam.

In the case of the present invention, the auxiliary plasma arc gun is used for injecting the dopant, in which case the substrate holder is vibrated by sonic or ultrasonic vibration to obtain a smooth dispersion on the diamond surface. A uniform inflow can be obtained. A barium titanate mass or similar energy conversion material driven by a power oscillator can be used to provide mechanical vibration, as shown in detail in FIG.

As shown in FIG. 5, rocking is performed by both ultrasonic waves or mechanical vibration and electric vibration (obtained by superimposing an AC voltage on a deflection DC voltage for accelerating a beam). Can be. Variable frequency
The frequency of the several ultrasonic oscillator 130 is set by a potentiometer 132. AC voltage is applied to the modulator 134
Where the amplitude of the vibration is set by the controller 136, and the applied ultrasonic power is applied, whereby the substrate swinging energy converter 140 expands and contracts repeatedly to move the substrate holder 118 back and forth. Driving causes vibration. When the vibration power on / off switch 144 is on, the vibration subsystem power supply 142 supplies power energy to all subsystems. The power energy from the power supply device 142 is supplied by the potentiometer 148 to the target deflection / electric signal voltage source 146 in which the deflection DC voltage is set.

The vibration AC voltage frequency can be set by potentiometer controller 150, and the “amplitude” of the target vibration voltage can be set by potentiometer 152. Such a numerical value can be determined in the same manner also in ultrasonic vibration. The DC deflection voltage and the superimposed AC oscillation voltage are applied between the ion gun raw materials, and by alternately increasing or decreasing the speed of the ion beam, a more uniform and smooth material can be deposited on the substrate. .

The above two swinging methods are applied to the substrate holder 118 individually or independently according to the purpose.
Thus, a unique plasma arc spray system for producing diamond, doped diamond, or diamond-like coatings on a substrate by pulsed plasma technology has been described.

[0051]

As described above, according to the present invention, a diamond semiconductor device in which diamond or a diamond-like single crystal film precisely doped with a desired amount of a desired dopant is deposited on a substrate is industrially manufactured. It can be easily obtained on a scale.

Further, according to the method of the present invention, even if the substrate to be used is a temperature-sensitive substrate, it can be manufactured without raising the temperature of the substrate so much, so that its application range is wide. A substrate material that can easily apply such a thin film of diamond without deteriorating quality is zinc sulfide (Zn).
S), zinc selenide (ZnSe), and the resulting material is used as an excellent laser component.

The system according to the invention is also used for the production of crystalline carbon pn junction diode products, and
A rectifier capable of withstanding high temperatures around 00-1500 ° F (540-820 ° C) can be made. Furthermore, the system of the present invention has the advantage of being able to operate at a high drain voltage, obtain a high gain without severely applying a signal voltage, and operate at a higher temperature than that obtained by a silicon device. It is also possible to manufacture an insulated gate field effect transistor having the same, and also possible to manufacture a diamond-like integrated circuit chip such as a light emitting diode or a diode for a semiconductor laser.

Furthermore, according to the present invention, it is possible to obtain a very translucent thick diamond film, so that a new device such as a light converter based on the polarization effect of an electric field on a light beam passing through a crystal lattice can be used. It is possible to obtain a new kind of high-power device, photoelectric coupling device, conversion device, scanning or detecting device, etc. by using the diamond semiconductor by utilizing this characteristic,
In addition, various semiconductor devices utilizing the excellent characteristics of a diamond-like film can be obtained, and its utility value is high.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a typical N-channel enhancement type insulated gate field effect transistor.

FIG. 2 is a schematic diagram of a system for controlling the deposition of a diamond semiconductor device manufacturing material.

FIG. 3 is a schematic block diagram of a circuit for changing a pulse time used directly in a donor plasma arc gun or an acceptor plasma arc gun.

FIG. 4 is a schematic block diagram of a temperature control system in the semiconductor vapor deposition system of the present invention.

FIG. 5 is a schematic block diagram of a vibration system in the semiconductor vapor deposition system of the present invention.

[Explanation of symbols]

 Reference Signs List 12 carbon carbide substrate 14 N-type buried layer 18, 20, 22 conductive metal 24 power supply terminal 26 drain terminal 28 gate terminal 32 vacuum reaction chamber 34 main (carbon) beam 36 main plasma arc gun 38 pure carbon electrode 40 donor (plasma arc) ) Gun 42 Acceptor (plasma arc) gun 44 Donor substance 46 Acceptor substance 48 Donor beam 50 Acceptor beam 52 Substrate 54 Substrate holder 56 Clocking oscillator 58 Donor control electronics 60 Acceptor control electronics 62 Donor gun relighting device 64 Acceptor gun Reignition device 66 Donor current regulator 68 Acceptor current regulator 70 Main spark generator 72 DC power supply 74, 76, 78, 80 Arc electrode 82 Power converter 84 Arc time / ignition frequency control circuit 86 Supplement Auxiliary arc converter 88, 90, 92 Potentiometer 94 Ignition power supply 96 Power supply for control electronics 98 Clocking oscillator 102 Main power supply 114 Microwave transmitter 116 Substrate 118 Substrate holder 120 Microwave power switch 122 Temperature before Preamplifier / adjuster 124, 136 Potentiometer 128 Microwave power supply 130 Variable amplitude microwave oscillator 138 Energy conversion material drive amplifier 140 Energy conversion material for substrate vibration 142 Vibration system power supply device 146 Power supply for target deflection / electric vibration 148 , 150, 152 Potentiometer

Continuation of the front page (56) References JP-A-1-164796 (JP, A) JP-A-61-53719 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21 / 203 C30B 23/00

Claims (10)

(57) [Claims] A vacuum reaction chamber; at least one plasma arc gun installed in the vacuum reaction chamber; means for installing a substrate holder in the vacuum reaction chamber; Manufacturing a semiconductor device comprising: means for irradiating at least one plasma arc beam from a plasma arc gun; and pulse control means for applying a pulse whose duration is precisely controlled to the at least one plasma arc gun. An apparatus, wherein the pulse control means supplies an arc starting current to the at least one plasma arc gun to generate an arc beam, and supplies a current to the at least one plasma arc gun to produce the arc beam. , A clock oscillating means, and a power supply to the at least one plasma arc gun. First that counts clock pulses from between said clock oscillator current flows that
And a gate means for gate-controlling a clock pulse sent from the clock oscillating means to the first register; and a preset pulse count representing a predetermined time when current is supplied to the at least one plasma arc gun. A second register for storing
First comparing means for comparing the preset pulse count stored in the register with the pulse count sent to the first register, and a stop for stopping supply of current to the at least one plasma arc gun. A pulse generating means for generating a pulse, a third register for counting and storing pulses from the clock oscillating means when no current is supplied to the at least one plasma arc gun; A fourth register for storing a preset pulse count representing a predetermined time when no current is supplied, and a preset pulse count stored in the fourth register and a pulse count received by the third register. Second comparing means for comparing, the at least one plasma arc gun Resuming pulse generating means for resuming current supply, wherein the current supply to the at least one plasma arc gun is accurately controlled to accurately supply the dopant material to the substrate. manufacturing device. 2. The plasma arc gun comprises a main beam plasma arc gun, an acceptor beam plasma arc gun, and a donor beam plasma arc gun.
The apparatus according to claim 1, wherein the pulse control means selectively and independently controls the beam plasma arc gun. 3. The apparatus according to claim 1, further comprising means for controlling a temperature of said substrate. 4. The temperature control means includes a microwave transmission means, a temperature detection means for detecting a temperature of the substrate, and a microwave power switch means for controlling output power of the microwave transmission means. The manufacturing apparatus according to claim 3, wherein 5. The apparatus according to claim 4, wherein said temperature control means controls the temperature in a range of 750 to 800 ° F. (about 400 to 430 ° C.). 6. The manufacturing apparatus according to claim 1, further comprising an oscillating means for oscillating the substrate to give a smooth distribution and a uniform flow of the dopant substance to the substrate. 7. The oscillating means includes means for mechanically and electrically oscillating the substrate.
3. The manufacturing apparatus according to claim 1. 8. The mechanical oscillating means includes an oscillating transducer attached to the substrate, a means for imparting oscillating to the substrate, and a means for applying oscillating power to the oscillating transducer. The manufacturing apparatus according to claim 7, wherein: 9. A means for applying power to the oscillating transducer includes a variable frequency ultrasonic oscillator, a modulating means connected to the variable frequency ultrasonic oscillator for controlling oscillating amplitude, and amplifying an output of the modulating means. The manufacturing apparatus according to claim 8, further comprising a driver amplifier that performs the operation. 10. The electric oscillating means includes a target D
The manufacturing apparatus according to claim 7, further comprising means for applying an AC voltage superimposed on the C voltage to the substrate.