JPH065934A - Superconductor device - Google Patents

Abstract

PURPOSE:To provide transistors, memories, and pressure sensors by the use of superconductors. CONSTITUTION:A ferroelectric substance is formed on the surface of a superconductor, and positive or negative pressure is applied to the surface of the superconductor. A ferroelectric substance 102 composed of zirconium.lead titanate, barium titanate, etc., is formed on the surface of a superconductor 101, and electrodes 103, 104, and 105 are made out of metal such as silver, etc., on the surface of the ferroelectric substance 102 and on the both-side surfaces of the superconductor 101 which interposes the ferroelectric substance 102. Consequently, it becomes possible to obtain superconductor transistors and memories capable of operating at high speed, and superconductor pressure sensors, etc., capable of operating with high sensitivity.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a new superconductor device.

[0002]

2. Description of the Related Art Conventionally, there have been Josephson effect devices, squid magnetic field sensors, standard voltage devices, etc. as superconductor devices.

[0003]

However, there is still no transistor, memory or pressure sensor using a superconductor in the above prior art.

The present invention solves the above problems of the prior art,
It is an object to provide a transistor, a memory and a pressure sensor using a superconductor.

[0005]

In order to solve the above problems and to achieve the above objects, the present invention relates to a superconductor device,
Basically, (1) a means for forming a ferroelectric substance on the surface of the superconductor, and (2) a means for applying a positive or negative pressure to the surface of the superconductor are taken. .

[0006]

[Function] The superconducting phenomenon is caused by the generation of two (twin) electrons having different spins (rotations) due to the interaction between phonons (phonons) and electrons. In the present invention, by applying an electric field to the ferroelectric material or mechanically applying pressure,
It provides a superconducting device that acts as a transistor, a memory, or a pressure sensor by controlling the phonons of the superconductor and thus controlling the interaction with electrons and consequently the generation of twin electrons. is there.

[0007]

EXAMPLES The present invention will be described in detail below with reference to examples.

FIG. 1 is a sectional view of a superconductor transistor showing an embodiment of the present invention. That is, (a) is the surface of the superconductor 101 made of niobium, lead (metal which becomes a superconductor at about 4K) and yttrium-valium-copper oxide (ceramic which becomes a superconductor at a liquid nitrogen temperature of 77K or higher). Ferroelectric material 1 made of zirconium, lead titanate, barium titanate, etc.
No. 02 is formed, and electrodes 103, 104 and 1 made of a metal such as silver are formed on the surface of the ferroelectric substance 102 and both side surfaces of the superconductor 101 sandwiching the ferroelectric substance 102.
05 denotes a gate G, a source S and a drain D, respectively.
FIG. 3 is a sectional view showing a principle superconducting transistor according to the present invention in which a transistor similar to a field effect transistor is formed as the above. (B) shows that a superconductor 111 is formed on the surface of a substrate 110 made of strontium titanate, sapphire, silicon or the like, a ferroelectric body 112 is formed on the surface of the superconductor 111, and a surface of the ferroelectric body 112 is formed. And electrodes 11 made of metal or the like on both side surfaces of the superconductor 111 sandwiching the ferroelectric body 112.
Transistors 3, 114 and 115 having a gate G, a source S and a drain D are formed. In (C), a superconductor 121 is formed on the surface of a substrate 120, an insulating film 126 made of a silicon oxide film or the like is formed on the surface of the superconductor 121, and a ferroelectric 122 is formed on the surface of the insulating film 126. , Electrodes 123, 124 and 12 made of metal or the like on the surface of the ferroelectric body 122 and on both side surfaces of the superconductor 121 sandwiching the ferroelectric body 122.
5 is formed by forming a transistor having a gate G, a source S and a drain D, respectively. Here, the insulating film 12
6 is a superconductor 12 from the gate G through the ferroelectric 122.
It is provided in order to prevent a space charge limiting current flowing to the device 1, that is, a current leakage.

The operation of the superconducting transistor according to this embodiment is performed by applying voltage from the electrodes 103, 113 and 123 of the gate G to the ferroelectrics 102, 112 and 12 respectively.
2 is distorted and the strain is applied to the superconductors 101 and 111.
To directly control the current flowing between the source S and the drain D by directly transmitting the current through the insulating film 126 to 121, and by applying the polarization action of the ferroelectric substance,
It can also be operated as a memory transistor. In any case, the operation speed of this superconductor transistor is limited by the strain rate of the ferroelectric substance, but high-speed operation of the order of nanoseconds is possible.

FIG. 2 is a sectional view of a pressure sensor using a superconductor showing another embodiment of the present invention. That is,
(A) The superconductor 201 has electrodes 202 and 203,
1 is a cross-sectional view of a principle superconducting transistor according to the present invention formed as a source S and a drain D, respectively. Now, when the pressure P is applied to the superconductor 201, the saturation current value flowing between the source S and the drain D changes, which is also a principle diagram showing that it can be operated as a pressure sensor. In (b), the superconductor 211 is formed on the surface of the base 210, the ferroelectric 214 is formed on the surface of the superconductor 211, and the pressure P is applied to the surface of the ferroelectric 214 and Electrodes 212 and 213 made of metal or the like are formed as a gate G and a source S on both side surfaces of the superconductor 211 sandwiching the dielectric 214, respectively. In (3), the superconductor 221 is formed on the surface of the base 220, and the insulating film 224 made of a silicon oxide film or the like is formed on the surface of the superconductor 221.
Pressure P is applied from the surface of the insulating film 224, and electrodes 222 and 223 made of metal or the like are provided as sources S and drains D on both surfaces of the superconductor 221 with the ferroelectric substance 221 sandwiched therebetween. Are formed. Here, the insulating film 224 is provided in order to prevent a space charge limiting current that flows from the metal rod to the superconductor 221 through the ferroelectric substance 221 when the pressure is applied to the metal rod, that is, current leakage.

The operation of the superconductor pressure sensor according to this embodiment is performed by applying a pressure P directly or by distorting the ferroelectric 214 or the insulating film 224 to distort the superconductors 201, 211 and 221 to cause the source S and the drain. The current flowing between D is changed. Although the operating speed of this superconductor sensor is limited by the strain rate of the ferroelectric or superconductor, it can operate at high speed on the order of nanoseconds.

[0012]

According to the present invention, it is possible to provide a superconductor transistor and a memory that operate at high speed, a superconductor pressure sensor that operates with high sensitivity, and the like.

[Brief description of drawings]

FIG. 1 is a sectional view of a superconductor transistor showing an embodiment of the present invention.

FIG. 2 is a sectional view of a pressure sensor using a superconductor showing another embodiment of the present invention.

[Explanation of symbols]

101, 111, 121, 201, 202, 203 ...
Superconductor 102, 112, 122, 214 ... Ferroelectric substance 103, 104, 105, 113, 114, 115, 1
23, 124, 125, 202, 203, 212, 21
3, 222, 223 ... Electrodes 110, 120, 210, 220 ... Base 126, 224 ... Insulating film S ... Source G ... Gate D ... Drain P ... Pressure

Claims (2)

[Claims] 1. A super-dielectric device characterized in that a ferroelectric is formed on the surface of the super-conductor. 2. A superconductor device, wherein a positive or negative pressure is applied to the surface of the superconductor.