JPH0658981A - Current detecting circuit for cmos integrrated circuit - Google Patents

Current detecting circuit for cmos integrrated circuit

Info

Publication number
JPH0658981A
JPH0658981A JP4209140A JP20914092A JPH0658981A JP H0658981 A JPH0658981 A JP H0658981A JP 4209140 A JP4209140 A JP 4209140A JP 20914092 A JP20914092 A JP 20914092A JP H0658981 A JPH0658981 A JP H0658981A
Authority
JP
Japan
Prior art keywords
circuit
cmos
voltage
power supply
cmos circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4209140A
Other languages
Japanese (ja)
Inventor
Tadao Nakamura
唯男 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP4209140A priority Critical patent/JPH0658981A/en
Publication of JPH0658981A publication Critical patent/JPH0658981A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a current detecting circuit for CMOS circuit with which current consumption under various static states of the CMOS circuit can be measured in a short time. CONSTITUTION:Since pass/fail of a CMOS circuit 2 can be decided by comparing voltage drop due to consuming current under static state thereof with a voltage reference through 8 comparator 10 built in an integrated circuit 1, the integrated circuit 1 is simply required to be connected directly with external power supply voltage for test VTEST and a voltage reference VREF and thereby stray capacitance of external wiring can be decreased with respect to a power supply terminal 3 onto which power supply voltage is applied during normal operation. Consequently, operating time of CMOS circuit 2 required for making transition from one static state to another static state can be shortened resulting in the enhancement of decision efficiency of CMOS circuit.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、CMOS集積回路の静
止状態での消費電流を効率よく検出するのに好適なCM
OS集積回路の電流検出回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a CM suitable for efficiently detecting current consumption of a CMOS integrated circuit in a stationary state.
The present invention relates to a current detection circuit of an OS integrated circuit.

【0002】[0002]

【従来の技術】一般に、パッケージングされた集積回路
は出荷される以前に個々に機能テストが行われ、このテ
ストに合格した集積回路のみが晴れて出荷されることに
なる。例えば、CMOS素子を有する集積回路の機能を
テストする場合、この集積回路内部の静止状態での消費
電流を調べることによって行われる。つまり、CMOS
素子の動作が停止している時の消費電流はnAオーダー
と極めて小さい為、この時の消費電流がnAオーダーか
ら外れた時に、CMOS素子が異常状態にあるものと判
定している。
2. Description of the Related Art Generally, a packaged integrated circuit is individually subjected to a functional test before being shipped, and only an integrated circuit which passes this test is shipped unambiguously. For example, when testing the function of an integrated circuit having a CMOS device, it is performed by examining the current consumption in a static state inside the integrated circuit. That is, CMOS
Since the current consumption when the operation of the element is stopped is extremely small on the order of nA, when the current consumption deviates from the nA order, it is determined that the CMOS element is in an abnormal state.

【0003】図2は上記したCMOS素子の動作が停止
している時の消費電流を測定するのに使用される回路図
である。図2において、(11)は集積回路であり、該集積
回路(11)内部にはMOSトランジスタをCMOS接続し
て成るCMOS回路(12)が内蔵されているものとする。
集積回路(11)から導出した電源端子VDD及びアース端子
SSはCMOS回路(12)を動作させる為に該CMOS回
路(12)と内部で接続されており、前記電源端子V DD及び
アース端子VSSの間には電源VTEST及び電流計(13)が直
列接続されている。
FIG. 2 shows that the operation of the above CMOS device is stopped.
Schematic used to measure current consumption while running
Is. In FIG. 2, (11) is an integrated circuit,
The MOS transistor is connected in CMOS inside the circuit (11).
It is assumed that the CMOS circuit (12) is formed.
Power supply terminal V derived from integrated circuit (11)DDAnd ground terminal
VSSIs a CMOS circuit for operating the CMOS circuit (12).
Is internally connected to the line (12) and is connected to the power supply terminal V DDas well as
Ground terminal VSSPower supply V betweenTESTAnd ammeter (13)
Column connected.

【0004】そして、CMOS回路(12)の動作を停止さ
せた静止状態における消費電流を電流計(13)で測定し、
その値がnAオーダーであるか否かを確認することによ
って、CMOS回路(12)が正常であるかどうかを判定し
ていた。
Then, the consumption current in a stationary state where the operation of the CMOS circuit (12) is stopped is measured by an ammeter (13),
By checking whether or not the value is on the order of nA, it is judged whether or not the CMOS circuit (12) is normal.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、図2の
様に、集積回路(11)外部に電流計(13)及び電源VTEST
直列接続すると、電源端子VDD及びアース端子VSSの間
における電源ラインの取り回しが長くなる為、電源端子
DD及びアース端子VSSの間の浮遊容量を無視できなく
なる。一般に、CMOS回路(12)をある状態で静止させ
て消費電流を計っていた状態から、違う状態で静止させ
て消費電流を計ろうとした場合、前者の静止状態から後
者の静止状態に至るのにCMOS回路(12)を動作させな
ければならない。ところが、上記した浮遊容量の存在に
よって、CMOS回路(12)はある静止状態から次の静止
状態に至るまでにμsecオーダーの時間を要してしま
うことになる。通常要求されるCMOS回路(12)の各静
止状態間の変化時間がnsecオーダーであることを考
慮すると、図2の回路では、CMOS回路(12)の動作を
任意の状態で静止させた状態で消費電流を測定し、該C
MOS回路(12)の良否判定を行うのに多くの時間を費や
してしまう問題があった。これは、集積回路(11)の出荷
を遅らせたり、測定用コストを増加させたりする原因と
なっていた。
However, when the ammeter (13) and the power source V TEST are connected in series outside the integrated circuit (11) as shown in FIG. 2, the power source terminal V DD and the ground terminal V SS are connected to each other. Since the routing of the power supply line becomes long, the stray capacitance between the power supply terminal V DD and the ground terminal V SS cannot be ignored. In general, when the CMOS circuit (12) is stopped in a certain state and current consumption is measured and then the CMOS circuit (12) is stopped in a different state to measure current consumption, the former still state may be changed to the latter still state. The CMOS circuit (12) must be operated. However, due to the existence of the above-mentioned stray capacitance, the CMOS circuit (12) requires a time of μsec order from one stationary state to the next stationary state. Considering that the normally required change time between the respective quiescent states of the CMOS circuit (12) is on the order of nsec, in the circuit of FIG. 2, the operation of the CMOS circuit (12) is stopped in an arbitrary state. Measure the current consumption and
There is a problem that it takes a lot of time to judge the quality of the MOS circuit (12). This has been a cause of delaying the shipment of the integrated circuit (11) and increasing the cost for measurement.

【0006】そこで、本発明は、CMOS回路の種々の
静止状態における消費電流の測定を短時間で行うことの
できるCMOS回路の電流検出回路を提供することを目
的とする。
Therefore, an object of the present invention is to provide a current detection circuit for a CMOS circuit, which can measure the current consumption of the CMOS circuit in various stationary states in a short time.

【0007】[0007]

【課題を解決するための手段】本発明は、前記問題点を
解決する為に成されたものであり、その特徴とするとこ
ろは、CMOS集積回路の静止状態における消費電流を
測定し、該CMOS集積回路の良否の判定を行うCMO
S集積回路の電流検出回路において、MOSトランジス
タをCMOS接続して成るCMOS回路と、テスト用電
源電圧が印加されるテスト用電源端子と、該テスト用電
源端子を介して前記CMOS回路と接続され、該CMO
S回路の消費電流に応じた電圧降下を生じる測定用抵抗
と、前記CMOS回路の消費電流が所定値を越えた時に
前記測定用抵抗の電圧降下が一定値を越えるのを抑制す
べく、前記測定用抵抗の両端に直列接続された少なくと
も1個の抑制用ダイオードと、前記測定用抵抗の電圧降
下により生じる電圧と基準電圧とを比較し、前記CMO
S回路の消費電流が正常範囲の値であるか否かを判定す
る判定回路と、を備えた点である。
The present invention has been made to solve the above-mentioned problems, and is characterized in that the current consumption of a CMOS integrated circuit in a stationary state is measured, and the CMOS CMO for judging the quality of integrated circuits
In the current detection circuit of the S integrated circuit, a CMOS circuit formed by connecting MOS transistors in CMOS, a test power supply terminal to which a test power supply voltage is applied, and a CMOS power supply terminal connected to the CMOS circuit via the test power supply terminal, The CMO
In order to prevent the voltage drop of the measuring resistor that causes a voltage drop corresponding to the current consumption of the S circuit and the voltage drop of the measuring resistor from exceeding a predetermined value when the current consumption of the CMOS circuit exceeds a predetermined value, the measurement At least one suppressing diode connected in series at both ends of the resistance for resistance is compared with the voltage generated by the voltage drop of the resistance for measurement and the reference voltage to obtain the CMO.
And a determination circuit that determines whether or not the current consumption of the S circuit is within a normal range.

【0008】[0008]

【作用】本発明によれば、CMOS回路の静止状態での
消費電流によって生じた電圧降下と基準電圧とを、CM
OS集積回路内部に設けた判定回路で比較することによ
ってCMOS回路の良否判定を行う様にした為、CMO
S集積回路にはテスト用電源電圧及び基準電圧を直接外
部接続するだけで済み、通常動作時の電源端子への外部
配線による浮遊容量の付加を少なくすることができる。
これより、CMOS回路をある静止状態から次の静止状
態とするのに該CMOS回路に要する動作時間を短縮で
き、CMOS回路の判定効率を上げることができる。
According to the present invention, the voltage drop and the reference voltage caused by the consumption current in the static state of the CMOS circuit are converted into the CM.
Since the judgment circuit provided inside the OS integrated circuit is used to judge whether the CMOS circuit is good or bad, the CMO
It is only necessary to directly connect the test power supply voltage and the reference voltage to the S integrated circuit, and it is possible to reduce the addition of stray capacitance to the power supply terminal during normal operation due to external wiring.
As a result, the operation time required for the CMOS circuit to change from one stationary state to the next stationary state can be shortened, and the determination efficiency of the CMOS circuit can be improved.

【0009】[0009]

【実施例】本発明の詳細を図面に従って具体的に説明す
る。図1は本発明のCMOS集積回路の電流検出回路を
示す回路図である。図1において、(1)はCMOS構成
の集積回路であり、内部にはMOSトランジスタをCM
OS接続して成るCMOS回路(2)が内蔵されている。
また、集積回路(1)からは、通常動作をする際に電源電
圧VDDが印加される電源端子(3)、CMOS回路(2)の
良否判定を行う際にテスト用電源電圧VTESTが印加され
るテスト用電源端子(4)、CMOS回路(2)の良否判定
結果P/Fが出力される出力端子(5)、基準電圧VREF
が印加される基準端子(6)、及びアースされるアース端
子(7)が導出されている。尚、電源端子(3)及びアース
端子(7)は、CMOS回路(2)が動作できる様に該CM
OS回路(2)の所望の部分と接続されている。
The details of the present invention will be described in detail with reference to the drawings. FIG. 1 is a circuit diagram showing a current detection circuit of a CMOS integrated circuit according to the present invention. In FIG. 1, (1) is an integrated circuit having a CMOS structure, and has a MOS transistor CM inside.
A CMOS circuit (2) formed by OS connection is built in.
Further, from the integrated circuit (1), a power supply terminal (3) to which the power supply voltage V DD is applied during normal operation, and a test power supply voltage V TEST are applied when the quality of the CMOS circuit (2) is judged. Power supply terminal for testing (4), output terminal (5) for outputting the P / F of the judgment result P / F of the CMOS circuit (2), reference voltage V REF
A reference terminal (6) to which is applied and a ground terminal (7) to be grounded are led out. The power supply terminal (3) and the ground terminal (7) are connected to the CM so that the CMOS circuit (2) can operate.
It is connected to a desired portion of the OS circuit (2).

【0010】集積回路(1)内部において、(8)は、CM
OS回路(2)の動作を停止させた静止状態における消費
電流を測定する為の測定用抵抗であり、テスト用電源端
子(4)及びCMOS回路(2)の電源供給部分との間に接
続されている。即ち、測定用抵抗(8)の両端に生じる電
圧降下から、CMOS回路(2)の良否判定を行う様にし
ている。尚、CMOS回路(2)の静止状態における消費
電流はnAオーダーと極めて小さいことから、CMOS
回路(2)の良否判定を容易とする為に、測定用抵抗(8)
の値は少なくともkΩオーダーという大きな値に設定さ
れている。
Inside the integrated circuit (1), (8) is a CM
This is a measuring resistor for measuring the current consumption in a stationary state where the operation of the OS circuit (2) is stopped, and is connected between the test power supply terminal (4) and the power supply part of the CMOS circuit (2). ing. That is, the quality of the CMOS circuit (2) is determined based on the voltage drop across the measuring resistor (8). Since the current consumption of the CMOS circuit (2) in the stationary state is extremely small on the order of nA,
Measuring resistor (8) for easy judgment of circuit (2)
Is set to a large value of at least kΩ order.

【0011】また、(9)は、測定用抵抗(8)の両端に接
続された少なくとも1個の抑制用ダイオードである。こ
こで、CMOS回路(2)において、動作を停止した状態
での消費電流は極めて小さいが、動作時の消費電流はμ
Aオーダーと極めて大きくなる為、CMOS回路(2)の
動作時における測定用抵抗(8)の電圧降下は極めて大き
いものとなってしまう。このままの状態では、CMOS
回路(2)の動作時において、CMOS回路(2)に印加さ
れる電源電圧は、それ自体を正常に動作させるのに最低
限必要とされる電圧レベルよりも下がってしまい、CM
OS回路(2)の誤動作を招くことになってしまう。そこ
で、CMOS回路(2)の動作時に、CMOS回路(2)に
印加される電源電圧が、CMOS回路(2)を正常動作さ
せるのに要求される最低限必要な電圧レベル以下となる
まで、測定用抵抗(8)の電圧降下が生じない様に、測定
用抵抗(8)の端子電圧を抑制する為に抑制用ダイオード
(9)が設けられている。つまり、抑制用ダイオード(9)
の段数は、CMOS回路(2)が動作している時の消費電
流に応じた測定用抵抗(8)の電圧降下を、CMOS回路
(2)が正常動作可能な最低電圧までに抑制できる数に設
定されているのである。
Further, (9) is at least one suppressing diode connected to both ends of the measuring resistor (8). Here, in the CMOS circuit (2), although the current consumption when the operation is stopped is extremely small, the current consumption during the operation is μ
Since it is as large as A order, the voltage drop of the measuring resistor (8) during the operation of the CMOS circuit (2) becomes extremely large. In this state, CMOS
During the operation of the circuit (2), the power supply voltage applied to the CMOS circuit (2) falls below the minimum voltage level required for the CMOS circuit (2) to operate normally.
This leads to malfunction of the OS circuit (2). Therefore, during the operation of the CMOS circuit (2), measurement is performed until the power supply voltage applied to the CMOS circuit (2) becomes equal to or lower than the minimum necessary voltage level required to operate the CMOS circuit (2) normally. Suppression diode to suppress the terminal voltage of the measuring resistor (8) so that the voltage drop of the operating resistor (8) does not occur.
(9) is provided. That is, the suppression diode (9)
The number of stages of the CMOS circuit is defined as
(2) is set to a number that can be suppressed to the lowest voltage that allows normal operation.

【0012】また、(10)はコンパレータ(判定回路)であ
り、非反転入力(+)端子は測定用抵抗(8)の一端と接続
され、反転入力(−)端子は基準端子(6)と接続されてい
る。つまり、CMOS回路(2)の動作を停止させた状態
での消費電流を測定する際、CMOS回路(2)が正常の
場合にはテスト用電源電圧VTESTから測定用抵抗(8)の
電圧降下を差し引いた電圧が基準電圧VREFより高くな
り、また、CMOS回路(2)がゲート破壊等によって異
常となっている場合には、大きな貫通電流が流れる為、
テスト用電源電圧VTESTから測定用抵抗(8)の電圧降下
を差し引いた電圧が基準電圧VREFより低くなる様にな
っている。即ち、コンパレータ(10)からは、CMOS回
路(2)が正常の時にハイレベルが出力され、反対にCM
OS回路(2)が異常を来している時にローレベルが出力
され、これらの判定結果が出力端子(5)を介して良否判
定結果P/Fとして出力されることになる。
Reference numeral (10) is a comparator (determination circuit), the non-inverting input (+) terminal is connected to one end of the measuring resistor (8), and the inverting input (-) terminal is the reference terminal (6). It is connected. That is, when measuring the current consumption in the state where the operation of the CMOS circuit (2) is stopped, if the CMOS circuit (2) is normal, the voltage drop of the measuring resistor (8) from the test power supply voltage V TEST. When the voltage obtained by subtracting is higher than the reference voltage V REF and the CMOS circuit (2) is abnormal due to gate breakdown or the like, a large through current flows.
The voltage obtained by subtracting the voltage drop of the measuring resistor (8) from the test power supply voltage V TEST is lower than the reference voltage V REF . That is, a high level is output from the comparator (10) when the CMOS circuit (2) is normal, and on the contrary CM
When the OS circuit (2) is abnormal, a low level is output, and these determination results are output as the pass / fail determination result P / F via the output terminal (5).

【0013】以上、説明した図1の構成から明らかな様
に、抑制用ダイオード(9)を設けた為に、CMOS回路
(2)をある静止状態から次の静止状態とするのに該CM
OS回路(2)を動作させても、測定用抵抗(8)の電圧降
下を抑制用ダイオード(9)の端子電圧に抑制することが
できるので、CMOS回路(2)の動作中に該CMOS回
路(2)にそれ自体を正常に動作させ得る電源電圧を供給
することができる。また、集積回路(1)のテスト用電源
端子(4)及び基準端子(6)に各々直接に電源V TEST及び
REFを接続するだけでCMOS回路(2)の良否判定を
行える為、電源端子(3)への浮遊容量の付加を少なくす
ることができ、これよりCMOS回路(2)をある静止状
態から次の静止状態とするのに必要とされるCMOS回
路(2)の動作を短時間で行うことができ、即ち、集積回
路(1)の良否判定を高速で行うことができる。
As is apparent from the above-described configuration of FIG.
Since the suppression diode (9) is provided in the
To change (2) from one stationary state to the next stationary state, the CM
Even if the OS circuit (2) is operated, the voltage drop of the measuring resistor (8)
It is possible to suppress the bottom to the terminal voltage of the suppression diode (9).
Therefore, it is possible to operate the CMOS circuit (2) while the CMOS circuit (2) is operating.
Supply the line (2) with a power supply voltage that allows it to operate normally.
can do. In addition, the power supply for testing the integrated circuit (1)
Power supply V directly to terminal (4) and reference terminal (6) TESTas well as
VREFThe quality of the CMOS circuit (2) can be determined simply by connecting
Since this can be done, the addition of stray capacitance to the power supply terminal (3) can be reduced.
This allows the CMOS circuit (2) to
CMOS times required to move from one state to the next
The operation of the path (2) can be performed in a short time, that is, the integration time
The quality of the road (1) can be determined at high speed.

【0014】[0014]

【発明の効果】本発明によれば、CMOS回路の静止状
態での消費電流によって生じた電圧降下と基準電圧と
を、CMOS集積回路内部に設けた判定回路で比較する
ことによってCMOS回路の良否判定を行う様にした
為、CMOS集積回路にはテスト用電源電圧及び基準電
圧を直接外部接続するだけで済み、通常動作時の電源端
子への外部配線による浮遊容量の付加を少なくすること
ができる。これより、CMOS回路をある静止状態から
次の静止状態とするのに該CMOS回路に要する動作時
間を短縮でき、CMOS回路の判定効率を上げることが
できる利点が得られる。
According to the present invention, the judgment circuit provided inside the CMOS integrated circuit compares the voltage drop caused by the consumption current of the CMOS circuit in the stationary state with the reference voltage to judge whether the CMOS circuit is good or bad. Therefore, it is only necessary to directly connect the test power supply voltage and the reference voltage to the CMOS integrated circuit, and it is possible to reduce the stray capacitance added to the power supply terminal by the external wiring during the normal operation. As a result, the operation time required for the CMOS circuit to change from one stationary state to the next stationary state can be shortened, and the determination efficiency of the CMOS circuit can be increased.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のCMOS集積回路の電流検出回路を示
す図である。
FIG. 1 is a diagram showing a current detection circuit of a CMOS integrated circuit of the present invention.

【図2】従来のCMOS集積回路の電流検出回路を示す
図である。
FIG. 2 is a diagram showing a current detection circuit of a conventional CMOS integrated circuit.

【符号の説明】[Explanation of symbols]

(1) 集積回路 (2) CMOS回路 (4) テスト用電源端子 (8) 測定用抵抗 (9) 抑制用ダイオード (10) コンパレータ (1) Integrated circuit (2) CMOS circuit (4) Test power supply terminal (8) Measurement resistor (9) Suppression diode (10) Comparator

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 CMOS集積回路の静止状態における消
費電流を測定し、該CMOS集積回路の良否の判定を行
うCMOS集積回路の電流検出回路において、 MOSトランジスタをCMOS接続して成るCMOS回
路と、 テスト用電源電圧が印加されるテスト用電源端子と、 該テスト用電源端子を介して前記CMOS回路と接続さ
れ、該CMOS回路の消費電流に応じた電圧降下を生じ
る測定用抵抗と、 前記CMOS回路の消費電流が所定値を越えた時に前記
測定用抵抗の電圧降下が一定値を越えるのを抑制すべ
く、前記測定用抵抗の両端に直列接続された少なくとも
1個の抑制用ダイオードと、 前記測定用抵抗の電圧降下により生じる電圧と基準電圧
とを比較し、前記CMOS回路の消費電流が正常範囲の
値であるか否かを判定する判定回路と、 を備えたことを特徴とするCMOS集積回路の電流検出
回路。
1. A current detection circuit of a CMOS integrated circuit for measuring current consumption of the CMOS integrated circuit in a stationary state to judge pass / fail of the CMOS integrated circuit, and a CMOS circuit in which MOS transistors are connected in CMOS, and a test. A test power source terminal to which a power source voltage is applied, a measuring resistor connected to the CMOS circuit via the test power source terminal, and causing a voltage drop according to the current consumption of the CMOS circuit; At least one suppressing diode connected in series at both ends of the measuring resistor to prevent the voltage drop of the measuring resistor from exceeding a certain value when the current consumption exceeds a predetermined value; Judgment comparing the voltage generated by the voltage drop of the resistor and the reference voltage to judge whether the current consumption of the CMOS circuit is within the normal range The current detection circuit of the CMOS integrated circuit comprising: the road, the.
【請求項2】 前記抑制用ダイオードの段数は、前記C
MOS回路が動作している時の消費電流に応じた前記測
定用抵抗の電圧降下を、前記CMOS回路が動作可能な
最低電圧までに抑制できる数に設定されていることを特
徴とする請求項1記載のCMOS集積回路の電流検出回
路。
2. The number of stages of the suppression diode is C
The voltage drop of the measuring resistor according to the current consumption when the MOS circuit is operating is set to a number that can be suppressed to the minimum voltage at which the CMOS circuit can operate. A current detection circuit of the CMOS integrated circuit described.
【請求項3】 通常動作時に電源電圧が印加され、前記
CMOS回路を動作させる為の通常電源端子を備えたこ
とを特徴とする請求項2記載のCMOS集積回路の電流
検出回路。
3. The current detection circuit of a CMOS integrated circuit according to claim 2, further comprising a normal power supply terminal for operating the CMOS circuit, to which a power supply voltage is applied during normal operation.
JP4209140A 1992-08-05 1992-08-05 Current detecting circuit for cmos integrrated circuit Pending JPH0658981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4209140A JPH0658981A (en) 1992-08-05 1992-08-05 Current detecting circuit for cmos integrrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4209140A JPH0658981A (en) 1992-08-05 1992-08-05 Current detecting circuit for cmos integrrated circuit

Publications (1)

Publication Number Publication Date
JPH0658981A true JPH0658981A (en) 1994-03-04

Family

ID=16567966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4209140A Pending JPH0658981A (en) 1992-08-05 1992-08-05 Current detecting circuit for cmos integrrated circuit

Country Status (1)

Country Link
JP (1) JPH0658981A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760599A (en) * 1995-08-14 1998-06-02 Sharp Kabushiki Kaisha Method and apparatus for testing semiconductor integrated circuits
US6756804B2 (en) 2001-03-22 2004-06-29 Renesas Technology Corp. Semiconductor integrated circuit device
JP2013518285A (en) * 2010-01-29 2013-05-20 フリースケール セミコンダクター インコーポレイテッド Static current (IDDQ) indication and test apparatus and method
US8482320B2 (en) 2010-02-23 2013-07-09 On Semiconductor Trading, Ltd. Current detection circuit and semiconductor integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760599A (en) * 1995-08-14 1998-06-02 Sharp Kabushiki Kaisha Method and apparatus for testing semiconductor integrated circuits
US6756804B2 (en) 2001-03-22 2004-06-29 Renesas Technology Corp. Semiconductor integrated circuit device
US6930504B2 (en) 2001-03-22 2005-08-16 Renesas Technology Corp. Semiconductor integrated circuit device
JP2013518285A (en) * 2010-01-29 2013-05-20 フリースケール セミコンダクター インコーポレイテッド Static current (IDDQ) indication and test apparatus and method
US8482320B2 (en) 2010-02-23 2013-07-09 On Semiconductor Trading, Ltd. Current detection circuit and semiconductor integrated circuit

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