JPH065829A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH065829A JPH065829A JP4160566A JP16056692A JPH065829A JP H065829 A JPH065829 A JP H065829A JP 4160566 A JP4160566 A JP 4160566A JP 16056692 A JP16056692 A JP 16056692A JP H065829 A JPH065829 A JP H065829A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- transparent film
- condenser lens
- conversion device
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 37
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000005018 casein Substances 0.000 description 5
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 5
- 235000021240 caseins Nutrition 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 108010010803 Gelatin Proteins 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、光電変換装置に関
し、特に集光レンズに透明膜を被着させた光電変換装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device, and more particularly to a photoelectric conversion device having a condenser lens covered with a transparent film.
【0002】[0002]
【従来の技術】固体撮像装置のような光電変換装置にお
いては、装置の画素の高密度化に伴い、画素の微細化に
対応した光電変換装置の高感度化が重要な開発課題にな
っている。半導体素子の改良による感度向上が限界に近
づいているため、最近では装置の表面に複数の集光レン
ズを設け、入射光を光電変換素子に集光させる方法が多
く取られるようになってきた。以下図面を参照して従来
技術を説明する。2. Description of the Related Art In a photoelectric conversion device such as a solid-state image pickup device, as the density of pixels of the device increases, it is an important development subject to increase the sensitivity of the photoelectric conversion device corresponding to the miniaturization of pixels. . Since the improvement of sensitivity due to the improvement of semiconductor elements is approaching the limit, recently, a method of providing a plurality of condenser lenses on the surface of the device and condensing incident light on a photoelectric conversion element has come to be widely used. The related art will be described below with reference to the drawings.
【0003】図3は代表的なカラー固体撮像装置の光電
変換素子部周辺のの断面図であるが、半導体基板40表
面に複数の光電変換素子41並びに複数の電荷転送部
(図示せず)とが形成され、その上に透光性樹脂からな
る平坦化層42が形成されている。さらにその上に第1
カラーフィルタ層43、第1中間層44、第2カラーフ
ィルタ層45、第2中間層46、第3カラーフィルタ層
47を順次形成し、その上を透光性樹脂よりなるオーバ
ーコート層48で覆ってフィルタ層を形成している。な
お第1中間層44、第2中間層46も透光性樹脂で形成
されており、カラーフィルタ層間の混色防止の為に使用
されている。カラーフィルタ層は、カゼイン、ゼラチン
等に感光性材料を加えた上、適切な染料でシアン、イェ
ロー、マゼンタ等に染色したものが使用されている。FIG. 3 is a cross-sectional view of the periphery of the photoelectric conversion element portion of a typical color solid-state image pickup device. A plurality of photoelectric conversion elements 41 and a plurality of charge transfer portions (not shown) are formed on the surface of the semiconductor substrate 40. Is formed, and the flattening layer 42 made of a translucent resin is formed thereon. Further on top of that
A color filter layer 43, a first intermediate layer 44, a second color filter layer 45, a second intermediate layer 46, and a third color filter layer 47 are sequentially formed, and an overcoat layer 48 made of a translucent resin is formed thereon. To form a filter layer. The first intermediate layer 44 and the second intermediate layer 46 are also made of a translucent resin and are used to prevent color mixing between the color filter layers. As the color filter layer, casein, gelatin, and the like, to which a photosensitive material is added, and dyed with an appropriate dye, such as cyan, yellow, and magenta, are used.
【0004】次に前記オーバーコート層48の上にノボ
ラック系フォトレジスト等を用いて集光レンズ49を形
成し、カラー固体撮像装置を完成させる。前記集光レン
ズ49の上に、レンズの形状変化を防止する目的で、第
1中間層44、第2中間層46と同一材料からなる保護
層50を形成する場合もある。(特開平3−14288
1、特開平3−190169参照)。この保護層50は
使用される場合と、使用されない場合があるので、図3
では点線で表示してある。Then, a condenser lens 49 is formed on the overcoat layer 48 by using a novolac type photoresist or the like to complete a color solid-state image pickup device. A protective layer 50 made of the same material as the first intermediate layer 44 and the second intermediate layer 46 may be formed on the condenser lens 49 in order to prevent the shape of the lens from changing. (JP-A-3-14288
1, see JP-A-3-190169). Since this protective layer 50 may or may not be used, FIG.
Is shown with a dotted line.
【0005】[0005]
【発明が解決しようとする課題】上記のような構造にお
いて、平坦化層、カラーフィルタ層、中間層、オーバー
コート層、集光レンズ、保護層は通常有機物で形成され
る。その材料としてはアクリル樹脂、カゼイン、ゼラチ
ン、ポリスチレン系樹脂、ノボラック系樹脂等が使用さ
れ、その屈折率はいずれも 1.5〜1.6 と近似している。In the above structure, the flattening layer, the color filter layer, the intermediate layer, the overcoat layer, the condenser lens, and the protective layer are usually made of an organic material. Acrylic resin, casein, gelatin, polystyrene resin, novolac resin, etc. are used as the material, and their refractive indexes are all about 1.5 to 1.6.
【0006】一方入射光の一部は、集光レンズ(保護層
が有る場合は保護層および集光レンズ)並びにカラーフ
ィルタ層、中間層等から構成されるレンズ・フィルタ系
の表面または界面で反射され、入射光の5〜10%は反
射光として損失されている。即ち入射光のうち5〜10
%はロスされ、その分光電変換装置の感度を落としてい
ることになる。On the other hand, a part of the incident light is reflected on the surface or interface of a lens / filter system composed of a condenser lens (protective layer and condenser lens if there is a protective layer), color filter layer, intermediate layer, etc. Therefore, 5 to 10% of the incident light is lost as reflected light. That is, 5 to 10 of the incident light
% Is lost, and the sensitivity of the photoelectric conversion device is reduced accordingly.
【0007】そこで本発明では、反射により前記レンズ
・フィルタ系より消失される光量を少なくし、光電変換
素子に入る光量を大きくして感度を向上させた光電変換
装置を提供しようとするものである。Therefore, the present invention aims to provide a photoelectric conversion device in which the amount of light lost from the lens / filter system due to reflection is reduced and the amount of light entering the photoelectric conversion element is increased to improve the sensitivity. .
【0008】[0008]
【課題を解決するための手段】上記目的を達成するため
に本発明では、光電変換素子とこの光電変換素子に対応
する集光レンズとを有する光電変換装置において、前記
集光レンズ上に前記集光レンズの屈折率よりも低い屈折
率を有する透明膜を形成することを特徴とする。In order to achieve the above object, according to the present invention, in a photoelectric conversion device having a photoelectric conversion element and a condenser lens corresponding to the photoelectric conversion element, the collector lens is provided on the condenser lens. It is characterized in that a transparent film having a refractive index lower than that of the optical lens is formed.
【0009】[0009]
【作用】集光レンズ上にこの集光レンズの屈折率よりも
低い屈折率を有する透明膜を適切な厚さで形成すると、
前記透明膜と前記集光レンズを含めた集光レンズ系の反
射率を極小化できるので、前記集光レンズ系外部に損失
される光量を少なくすることができ、従って光電変換装
置の感度を上げることができる。[Function] When a transparent film having a refractive index lower than that of the condenser lens is formed on the condenser lens with an appropriate thickness,
Since the reflectance of the condenser lens system including the transparent film and the condenser lens can be minimized, the amount of light lost to the outside of the condenser lens system can be reduced, and therefore the sensitivity of the photoelectric conversion device can be increased. be able to.
【0010】一般にレンズの屈折率より低い屈折率の透
明膜を、入射光波長の4分の1波長に相当する膜厚でレ
ンズ上に形成すると、光の干渉作用により光の反射が抑
えられ透過率が高まることが知られている。透明膜の膜
厚を0.10〜0.18μmとすれば、通常の可視光領域の波長
0.40〜0.70μmの4分の1波長をカバーすることがで
き、可視光領域全域に亙って低反射率を実現することが
できる。Generally, when a transparent film having a refractive index lower than that of the lens is formed on the lens with a film thickness corresponding to a quarter wavelength of the incident light wavelength, the reflection of the light is suppressed by the interference of light and the light is transmitted. It is known that the rate will increase. If the thickness of the transparent film is 0.10 to 0.18 μm, the wavelength in the normal visible light range
A quarter wavelength of 0.40 to 0.70 μm can be covered, and a low reflectance can be realized over the entire visible light region.
【0011】また集光レンズ下部界面およびフィルタ層
等からの反射光についても、前記集光レンズの屈折率よ
りも前記透明膜の屈折率の方が小さいので、これら集光
レンズと透明膜の界面において全反射される確率が上が
り、前記集光レンズ系外部へ損失される光量が減少す
る。As for the light reflected from the lower interface of the condenser lens and the filter layer, the refractive index of the transparent film is smaller than that of the condenser lens. , The probability of total reflection is increased, and the amount of light lost to the outside of the condenser lens system is reduced.
【0012】[0012]
【実施例】本発明の実施例を図面を参照して説明する。
図1は本発明の一実施例を示す断面図である。図1にお
いて半導体基板10に複数の光電変換素子11を横ピッ
チ9. 6μm、縦ピッチ 9.9μmで配設した。その上にア
クリル系樹脂からなる平坦化層12、カゼインにシアン
色の染色を施した第1カラーフィルタ層13、アクリル
系樹脂からなる第1中間層14、カゼインに黄色の染色
を施した第2カラーフィルタ層15、アクリル樹脂から
なる第2中間層16、カゼインにマゼンタ色の染色を施
した第3カラーフィルタ層17、アクリル樹脂からなる
オーバーコート層18を順次形成し、厚さ 7μmのフィ
ルタ層を形成した。その上にノボラック系ポジ型フォト
レジスト(屈折率1.60)を用いて、通常のフォトリソグ
ラフィ技術でパターニングし、再露光による透明化処
理、熱メルトによる形状付与等、よく知られた工程で前
記光電変換素子11上に集光レンズ19を形成した。こ
の集光レンズ19の大きさは、縦 9.0μm、横 9.0μ
m、高さ 2.6μmとした。さらに、サイトップ溶液(旭
硝子製透明フッ素樹脂、屈折率1.34)をレンズ上に厚さ
0.14μmにスピンコートし、低屈折率の透明膜20を形
成して、光電変換装置を完成させた。Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a sectional view showing an embodiment of the present invention. In FIG. 1, a plurality of photoelectric conversion elements 11 are arranged on a semiconductor substrate 10 with a horizontal pitch of 9.6 μm and a vertical pitch of 9.9 μm. On top of that, a flattening layer 12 made of acrylic resin, a first color filter layer 13 made of casein dyed in cyan, a first intermediate layer 14 made of acrylic resin, and a second colored casein made in yellow. A color filter layer 15, a second intermediate layer 16 made of acrylic resin, a third color filter layer 17 obtained by dyeing casein with magenta color, and an overcoat layer 18 made of acrylic resin are sequentially formed, and a filter layer having a thickness of 7 μm is formed. Was formed. Then, using a novolac-based positive photoresist (refractive index 1.60), patterning with ordinary photolithography technology, and performing the photoelectric conversion in a well-known process such as transparency treatment by re-exposure and shape imparting by heat melt. A condenser lens 19 was formed on the element 11. The size of the condenser lens 19 is 9.0 μm in length and 9.0 μ in width.
m and the height was 2.6 μm. In addition, CYTOP solution (transparent fluororesin made by Asahi Glass, refractive index 1.34) is applied on the lens
The transparent film 20 having a low refractive index was formed by spin coating to a thickness of 0.14 μm to complete the photoelectric conversion device.
【0013】次に図2に、透明膜20(厚さ0.14μm)
が有る場合と無い場合について、集光レンズ19のレン
ズ膜厚を変化させた時の相対感度の比較を示す。図2に
おいて曲線31は透明膜20がない従来技術の場合で、
曲線32は本発明の実施例に示す低屈折率の透明膜があ
る場合、曲線33は比較としていれたもので、アクリル
系ネガ型フォトレジスト(屈折率1.56)により形成した
透明膜20がある場合を示す。集光レンズ19の高さが
2.0μm以下の低い領域では、前記サイトップ溶液を塗
布する際、複数配設された前記集光レンズ19の境界部
(凹部)にこの溶液がたまり、レンズ効果が小さくな
る。従って透明膜20がある場合の曲線32と曲線33
の感度は、高さが 2.0μm以下の低い領域では、透明膜
20がない場合の曲線31の感度を下回る。Next, referring to FIG. 2, the transparent film 20 (thickness 0.14 μm)
A comparison of relative sensitivities when the lens film thickness of the condenser lens 19 is changed is shown with and without. In FIG. 2, a curve 31 represents the case of the conventional technique without the transparent film 20,
The curve 32 is a transparent film having a low refractive index shown in the embodiment of the present invention, and the curve 33 is used as a comparison. Indicates. The height of the condenser lens 19
In a low region of 2.0 μm or less, when the Cytop solution is applied, the solution accumulates at the boundary (recess) of the plurality of condensing lenses 19 arranged, and the lens effect is reduced. Therefore, the curve 32 and the curve 33 when the transparent film 20 is present
In the low region where the height is 2.0 μm or less, the sensitivity is lower than the sensitivity of the curve 31 when the transparent film 20 is not provided.
【0014】しかしながら前記集光レンズ19の高さが
2.0μmを超えると、低屈折率の透明膜20がある場合
の曲線32では、透明膜20が無い場合の曲線31より
感度が上回る。前記集光レンズ19の屈折率(1.60)と
同程度の屈折率(1.56)の透明膜20がある場合の曲線
33では、透明膜20が無い場合の曲線31の最大感度
を上回ることはない。前記集光レンズ19の膜厚が 2.0
μmを超える領域では、曲線32は他の曲線31、33
に比べ最大5%の感度向上がみられた。However, the height of the condenser lens 19 is
When it exceeds 2.0 μm, the curve 32 with the transparent film 20 having a low refractive index has a higher sensitivity than the curve 31 without the transparent film 20. The curve 33 with the transparent film 20 having a refractive index (1.56) similar to the refractive index (1.60) of the condenser lens 19 does not exceed the maximum sensitivity of the curve 31 without the transparent film 20. The thickness of the condenser lens 19 is 2.0
In the region exceeding μm, the curve 32 is different from the other curves 31, 33.
A maximum sensitivity improvement of 5% was observed.
【0015】なお、本実施例では、カラー固体撮像装置
について述べたが、平坦化層の形成後に直接集光レンズ
を形成する白黒固体撮像装置にも適用できることはいう
までもない。また本発明は固体撮像装置のみならず、受
光型の光電変換装置全般に適用できるものである。In this embodiment, the color solid-state image pickup device has been described, but it goes without saying that the present invention can be applied to a monochrome solid-state image pickup device in which a condenser lens is directly formed after forming a flattening layer. Further, the present invention can be applied not only to the solid-state image pickup device but also to general light receiving type photoelectric conversion devices.
【0016】[0016]
【発明の効果】集光レンズの表面に、この集光レンズの
屈折率より低い屈折率を有する透明膜を設けたので、前
記集光レンズおよび前記透明膜からなる集光レンズ系の
反射率が低下し、光電変換装置の感度を向上させること
ができる。Since the transparent film having the refractive index lower than that of the condenser lens is provided on the surface of the condenser lens, the reflectance of the condenser lens system composed of the condenser lens and the transparent film is improved. It is possible to improve the sensitivity of the photoelectric conversion device.
【図1】本発明の実施例による光電変換装置の断面図。FIG. 1 is a sectional view of a photoelectric conversion device according to an embodiment of the present invention.
【図2】透明膜有無に対する相対感度比較図。FIG. 2 is a comparative sensitivity comparison diagram with and without a transparent film.
【図3】従来技術による光電変換装置の断面図。FIG. 3 is a cross-sectional view of a photoelectric conversion device according to a conventional technique.
10 … 半導体基板 11 … 光電変換素子 12 … 平坦化層 13 … 第1カラーフィルタ層 14 … 第1中間層 15 … 第2カラーフィルタ層 16 … 第2中間層 17 … 第3カラーフィルタ層 18 … オーバーコート層 19 … 集光レンズ 20 … 透明膜 10 Semiconductor substrate 11 Photoelectric conversion element 12 Flattening layer 13 First color filter layer 14 First intermediate layer 15 Second color filter layer 16 Second intermediate layer 17 Third color filter layer 18 Over Coating layer 19 ... Condensing lens 20 ... Transparent film
Claims (2)
する集光レンズとを有する光電変換装置において、前記
集光レンズ上に前記集光レンズの屈折率よりも低い屈折
率を有する透明膜を形成することを特徴とする光電変換
装置。1. A photoelectric conversion device having a photoelectric conversion element and a condenser lens corresponding to the photoelectric conversion element, wherein a transparent film having a refractive index lower than that of the condenser lens is provided on the condenser lens. A photoelectric conversion device characterized by being formed.
ることを特徴とする請求項1記載の光電変換装置。2. The photoelectric conversion device according to claim 1, wherein the transparent film has a thickness of 0.10 to 0.18 μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4160566A JPH065829A (en) | 1992-06-19 | 1992-06-19 | Photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4160566A JPH065829A (en) | 1992-06-19 | 1992-06-19 | Photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH065829A true JPH065829A (en) | 1994-01-14 |
Family
ID=15717750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4160566A Pending JPH065829A (en) | 1992-06-19 | 1992-06-19 | Photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH065829A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280532A (en) * | 2001-03-14 | 2002-09-27 | Sharp Corp | Solid-state imaging device |
US9093577B2 (en) | 2012-04-17 | 2015-07-28 | Canon Kabushiki Kaisha | Image sensor and image capture apparatus |
WO2016185902A1 (en) * | 2015-05-15 | 2016-11-24 | ソニー株式会社 | Imaging device, imaging method, and program |
-
1992
- 1992-06-19 JP JP4160566A patent/JPH065829A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280532A (en) * | 2001-03-14 | 2002-09-27 | Sharp Corp | Solid-state imaging device |
US9093577B2 (en) | 2012-04-17 | 2015-07-28 | Canon Kabushiki Kaisha | Image sensor and image capture apparatus |
WO2016185902A1 (en) * | 2015-05-15 | 2016-11-24 | ソニー株式会社 | Imaging device, imaging method, and program |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0184687B1 (en) | Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same | |
US5132251A (en) | Method for manufacturing a color filter | |
KR100312997B1 (en) | Color filter manufacturing method capable of assuring a high alignment accuracy of color filter and alignment mark therefor | |
JP2004200360A (en) | Solid-state imaging device and method of manufacturing the same | |
US20080254565A1 (en) | Method for fabricating semiconductor image sensor | |
CN100536155C (en) | CMOS image sensor and preparation method thereof | |
JP4485151B2 (en) | Solid-state imaging device manufacturing method and solid-state imaging device. | |
US20200075651A1 (en) | Double-layer color filter and method for forming the same | |
US20060138487A1 (en) | CMOS image sensor and method for fabricating the same | |
JP4304987B2 (en) | Solid-state imaging device and manufacturing method thereof | |
JPH07176708A (en) | Solid-state image pickup device | |
JPH065829A (en) | Photoelectric conversion device | |
JP2000357786A (en) | Solid state imaging device | |
JPH07105481B2 (en) | Method of manufacturing solid-state imaging device | |
JPH04343470A (en) | Solid-state image pickup device | |
JPH05283661A (en) | Solid state image pickup | |
JP4175169B2 (en) | Solid-state imaging device and manufacturing method thereof | |
KR20010061586A (en) | Method for fabricating microlens in image sensor | |
JP2000304906A (en) | Microlens array for solid-state image pickup element and solid-state image pickup element using the same | |
JP2001085651A (en) | Solid state image pick up element and fabrication method thereof | |
JPH01309370A (en) | Solid-state image sensor | |
JP3919671B2 (en) | Color filter manufacturing method and alignment mark | |
JP2003209231A (en) | Solid-state imaging device and system thereof | |
JPH04233759A (en) | Solid-state image sensing device and manufacture thereof | |
JPH02230768A (en) | Solid-state image sensing element |