JPH065670A - Probe device - Google Patents

Abstract

PURPOSE:To provide a probe device which is small in size, high in accuracy, able to measure at a high speed, and excellent in controllability and safety. CONSTITUTION:A wafer chuck 20 which sucks a wafer 22 is set rotatable by angles of + or -90 degrees centering on a point where the wafer 22 is kept in a horizontal position. A probe needle 18 is supported by a test head 10 through the intermediary of a probe unit 16 at a point opposed to the wafer 22 rotated by an angle of 90 degrees in a counterclockwise direction. The test head 10 is arranged on the side of a device main body 100 so as to be movable in a horizontal direction. An alignment unit 50 equipped with a CCD 52 is arranged on the opposite side of the device main body 100. A marking bridge 60 is arranged above the wafer chuck 20. An X table 30, a Y table 40, and a Z drive mechanism are provided to two-dimensionally control the wafer 22 different in position.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a probe device.

[0002]

2. Description of the Related Art A probe device of this type, for example, a probe device for a semiconductor wafer, is provided before dicing the wafer.
It is used for the purpose of measuring electrical characteristics such as a circuit function of an IC chip on a wafer in a wafer state. in this case,
Since the IC chips are arranged on the semiconductor wafer in the shape of a substrate, it is necessary to perform probing measurement while scanning each IC chip stepwise. For this scanning, an XY table with extremely high accuracy is used. There must be. Further, a test head for performing high-speed transmission of input / output signals is required between the tester provided outside and the input / output section of the IC chip. Further, in the case of performing such probing measurement, it is required that fine alignment, that is, accurate alignment of a wafer, marking on a defective chip, inspection, that is, inspection of a needle mark on a pad, are simultaneously performed.

In order to perform such a process, conventionally, an apparatus as shown in FIGS. 4 and 5 has been used. FIG. 4 is a view of the apparatus viewed from the outside, and FIG. 5 is a simplified view of the internal structure. As you can see from Figure 4,
At the time of inspection, the test head is arranged above the probe device main body 390 as shown in FIG. If necessary, for example, when a probe card (not shown) attached to the back surface of the test head 370 is replaced, or when the wafer is aligned with the microscope 380 at the beginning of the lot, the test is performed. It was necessary to retract the head 370 using the hinge 400 in the direction of the arrow in the figure.

Further, as shown in FIG. 5, this apparatus comprises a base 300, an X table 310, a Y table 320, a fine alignment unit 330, a probing unit 340 and a marking unit 350.
When performing probing measurement on the wafer 360 with this apparatus, first, the fine alignment unit 330 performs alignment, the probing unit 340 performs probing measurement, the marking unit 350 marks defective chips, and finally the fine alignment unit. At 330, the inspection is performed and the process ends. Also, in fine alignment, defective chip marking, and inspection processing, as in the probing processing, it is necessary to scan the IC chips arranged on the wafer in a matrix pattern, so that as shown in FIG. The high precision XY table was shared under all units. Therefore, the base 300 becomes large in the Y direction, and this tendency is further strengthened by the recent increase in the diameter of the wafer.

By the way, with the recent high integration of LSIs,
Since the gate size has been reduced and the parasitic capacitance of the wiring has been reduced, it has become possible to design ultra-high speed LSIs. This allows, for example, L for microprocessors, DSPs, etc.
In SI, those operating at a high speed of 20 MHz or higher are becoming mainstream. However, even if the LSI speeds up in this way, if the tester cannot cope with this high speed operation, the yield of IC chips will deteriorate due to the problem of testability. Therefore, in order to deal with such a problem, a test head capable of performing a high frequency test has been developed, which increases the weight of the test head, and it is expected that the weight will be 300 to 500 kg in the future. There is.

Further, the area of the core portion in the LSI chip has been reduced due to the high integration of the LSI, while the number of input / output signals has increased due to the complicated processing signal. As a result,
Due to the area of the input / output section in the LSI chip, that is, the pad section, it has become impossible to reduce the area of the entire chip. Therefore, in the submicron process, the pad size, which used to be 100 μm square, was 60 μm.
It is becoming m square.

[0007]

Due to such high speed and high integration of the LSI, the conventional device has the following problems.

First of all, due to the increase in the weight of the test head accompanying the increase in the speed of the LSI, the operability and the operational safety are extremely deteriorated. In particular, if the test head weighs 300 to 500 kg as the LSI speed increases in the future, it is expected that the test head cannot be moved by the conventional method using the hinge.
In addition, as the LSI becomes more highly integrated, the pad size will become smaller, and the most important technical issue in this type of probe device, the standard value of the needle tip on the pad, will be stricter. Is being demanded. On the other hand,
Due to the increase in the diameter of the wafer, the tendency of increasing the size in the Y direction is further strengthened in the conventional apparatus. The increase in length in the Y direction reduces the rigidity of the base in the Y direction, deteriorates the processing accuracy of the ball screw for driving the Y table, increases the cumulative error of the ball screw, and increases the attitude error of the Y table on the base. As a result, the movement accuracy of the XY table deteriorates. Then, in order to prevent the movement accuracy from deteriorating and satisfy the above-mentioned standard value, a device for correcting the error is required, but the lengthening in the Y direction complicates the correction device and the correction method. , Was complicated.

Therefore, the object of the present invention is to meet the above-mentioned standard range while coping with the increase in the size of the test head and the reduction in the pad size which accompany the high speed and high integration of the LSI. It is an object of the present invention to provide a small-sized and high-speed probe device that can achieve probing accuracy without complicating a device for correction.

[0010]

A probe device according to the present invention supports an object to be measured and sets the surfaces to be measured of the object to be measured in at least first and second directions which are different from each other. A supporting table, a scanning means for scanning the object to be measured set in the first and second directions on a two-dimensional plane, and a position facing the object to be measured set in the first direction. A probe card provided with a large number of contact terminals for performing electrical probing measurement by contacting a device under test inside the device under test; and the device under test set in the second orientation. Image pickup means arranged to face each other and for adjusting the position of the object to be measured before the electrical probing measurement.

[0011]

First, the support base for supporting the object to be measured is set in the second direction. Then, before the electrical probing measurement, with respect to the image pickup means for adjusting the position of the measured object, the measured object is scanned on the two-dimensional plane using the scanning means, and the position of the measuring element to be measured is measured. get information. Then, the support base is set in the first orientation. Then, the electrical probing measurement is performed by bringing a large number of contact terminals for performing the electrical probing measurement into contact with the device under test inside the device under test. By scanning the object to be measured by the scanning means, the probing inspection of all the elements to be measured in the object to be measured is performed.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the probe device according to the present invention will be specifically described below with reference to the drawings.

First, the configuration of this embodiment will be described.

FIG. 1 is a sectional view of this embodiment, and FIG. 2 is a three-dimensional representation thereof. However, the marking bridge 60, the scratch marker 62, and the scratch needle 63 are not shown in FIG.

The test head 10 is arranged on the side surface of the apparatus main body 100 so as to be horizontally movable, for example. The test head 10 is installed on a carrier 12, and a roller 14 is attached to the carrier 12. As a result, in order to test a high-speed IC such as a microprocessor or DSP, even if the test head becomes large, the test head 10 can be horizontally moved safely and easily. Therefore, the replacement of the probe unit 16 and the maintenance of the test head 10 can be easily performed, and the test head 10 does not interfere even when the operator inspects the needle marks on the wafer with a microscope (not shown). It also has excellent operability.

A probe unit 16 is detachably attached to the test head 10, and the probe unit 16
The probe card (not shown) in the probe needle 18
Is provided. As a result, when measuring an object to be measured, such as a semiconductor wafer 22, the probe needle 18 is attached to the wafer 22.
By making contact with the bonding pad of the upper IC chip, it is possible to electrically measure the IC chip in a wafer state.

The object to be measured, eg, the wafer 22 is vacuum-adsorbed by the wafer chuck 20, for example. This vacuum suction is performed, for example, by vacuum-sucking the wafer 22 through a plurality of vacuum suction holes (not shown) provided on the surface of the wafer chuck 20. However, the suction of the wafer 22 can be performed not only by this vacuum suction but also by electrostatic suction using, for example, an electrostatic chuck. This allows
For example, when probing a wafer in a low temperature range, the wafer 22 can be probed in a vacuum chamber. The wafer chuck 20 is supported by a support shaft 26. Then, with the support shaft 26 as a rotation axis, the wafer chuck 20 is located at a horizontal position, a position that is preferably 90 degrees clockwise from the horizontal position, and a position that is preferably 90 degrees counterclockwise. It can be rotated by a rotation drive mechanism (not shown). The support shaft 26 is attached to the support table 24. The support table 24 is fixed to the X table 30 so that the X
In addition to being movable in the direction, the Z-direction drive mechanism (not shown) can move up and down in the direction of arrow Z in FIG.

The X table 30 is movable in the direction of arrow X in FIG. 1 along a guide 36 provided on the Y table 40. In addition, the Y table 40 is also the base 70
It is movable in the Y direction by a guide 46 provided on the. A drive mechanism for the X table 30 and the Y table 40 in this case is shown in FIG. First, a case where the X table 30 is moved in the X direction in FIG. 3 will be described.

A motor 32 is provided on the Y table 40. A ball screw 34 is connected to the motor 32, and the ball screw 34 is rotationally driven by the motor 32. Since the ball screw 34 is connected to the X table 30 having a nut (not shown) to be screwed, the rotational drive of the motor 32 is converted into linear drive in the X direction. This allows the wafer chuck 20 together with the X table 30 to move in the X direction along the guide 36 provided on the Y table 40.

The same method is used to move the Y table 40 in the Y direction. That is, the rotational drive of the motor 42 is converted into linear drive in the Y direction by the ball screw 44 and the nut that is screwed on the Y table 40. This allows the X table 3 as well as the Y table 40.
0 and the wafer chuck 20 can be moved in the Y direction along a guide 46 provided on the base 70.

The base 70 is installed on a carrier 72. A roller 74 is attached to the carrier table 72 so that it can be moved at any time. An alignment unit 50 is installed on the base 70. An image pickup device such as a CCD 52 for performing, for example, fine alignment and inspection of the wafer 22 is provided at the tip of the alignment unit 50. In this case, although not shown in the figure, the alignment unit 50 is provided with two CCDs of high magnification and low magnification.

A marking bridge 60 is set above the wafer 22. A marking marker 62 for marking a defective IC chip, for example, a scratch marker 62 is attached to the tip of the marking bridge 60, and an ink needle 63 is provided on the inking marker 62. Marking can be performed by inking the defective IC chip with the ink needle 63.

Next, the operation of this embodiment will be described.

When the wafer probing inspection is performed in this embodiment, the following steps are performed: wafer loading, pre-alignment, fine alignment, probing, defective chip marking, inspecion, and wafer unloading. .

First, the wafer 22 is a transfer arm (not shown).
Then, the wafer is loaded from a wafer cassette (not shown) and carried out to a pre-alignment stage (not shown). The pre-alignment stage pre-aligns the wafer 22 by, for example, aligning the orientation flat. Next, the wafer 2 is transferred by the transfer arm.
2 is a wafer chuck 20 from the pre-alignment stage
And is adsorbed by, for example, vacuum adsorption. In this case, the wafer chuck 20 is set by a rotation driving mechanism (not shown) so that the surface for sucking the wafer is preferably parallel to the horizontal plane.

Next, fine alignment of the wafer 22 is performed. In the fine alignment, the centering of the wafer, the orthogonal axis alignment of the wafer, and the thickness inspection of the wafer are performed, which will be described below.

When performing fine alignment, first,
The wafer chuck 20 rotates 90 degrees clockwise and the X table 30 moves, so that the wafer 22 is set at a position where the CCD 22 can scan the wafer 22. With this setting, the two-dimensional scanning of the wafer 22 with respect to the CCD 52 can be executed using the Y table 40 and the Z drive mechanism.

Next, the centering of the wafer 22 is performed. The centering of the wafer 22 is performed by the low magnification CCD 52. First, the Z-direction drive mechanism moves the wafer 22 on the wafer chuck 20 in the Z-direction, and two coordinates of the intersections of the left and right edges of the scanning line of the low-magnification CCD 52 and the wafer 22 are measured. Next, the wafer 22 on the wafer chuck 20 is moved in the Y direction by the Y table 40, and thereafter, the coordinates of the intersection of the scanning line and the wafer edge are measured at two points in the same manner as described above. The center coordinate C _{2 of the} wafer is measured from the coordinates of the four points thus measured, and the known center coordinate C ₁ of the wafer chuck 20 is used to determine the wafer chuck 22 at the center of the wafer.
The deviation from the center | C ₁ -C ₂ | is measured and centered.

Next, the high-magnification CCD 52 is used to align the orthogonal axes of the wafer. The orthogonal axis alignment is performed by measuring the line connecting the pads in the IC chip by the high-magnification CCD 52 and aligning this line with the Y axis of the device. Finally, the wafer thickness is measured. The thickness is measured, for example, by measuring, for example, five points on the wafer 22 with an electrostatic sensor (not shown).

The fine alignment is completed as described above, the wafer chuck 20 rotates counterclockwise by 180 degrees, and the X table 30 moves, whereby the probe unit 1 is moved.
The wafer 22 is set at a position where the wafer 22 can be measured by 6. After that, the probe unit 16 electrically measures the IC chip on the wafer 22. At this time, the wafer 22 on the wafer chuck 20 is placed on the Y table 40.
And the Z-direction driving mechanism, the two-dimensional scanning of the wafer 22 with respect to the probe needle 18 can be performed.
The IC chips on 2 can be sequentially measured. Also,
The wafer 22 can be moved toward and away from the probe needle 18 by using the X table 30. Further, the fine movement Z ₁ and θ mechanism is mounted in the mechanism of the wafer chuck 20. Note that the test head 10 arranged on the side surface may be moved to the right side in FIG. 1 during the probing inspection. Even in such a case, the test head 1 having a considerable weight as in the past is used.
Since it is not necessary to rotate 0 against its own weight, operability,
Safety is improved.

When the measurement by the propping is completed, the wafer chuck is rotated clockwise by 90 degrees, and the wafer 22 supported by the wafer chuck 20 is set horizontally. After that, the X table 30 moves, and the inking marker 62 is set right above the wafer 22. The two-dimensional scanning of the wafer 22 with respect to the marker 62 can be performed using the X table 30 and the Y table 40, and the contact / separation drive of the wafer 22 with respect to the ink needle 63 is performed by using the Z drive mechanism or the Z ₁ , θ mechanism of the wafer chuck 20. Can be realized. In this way, the inking marker 62 marks a chip that has been determined to be defective by the probing measurement.

When the marking is completed, the wafer chuck 20 is rotated clockwise by 90 degrees, the X table 30 is moved, and inspection is performed by the high precision CCD 52. In this inspection, Y table 4
The wafer 22 is two-dimensionally scanned with respect to the CCD 52 by the 0 and Z, Z ₁ drive mechanism, and it is inspected whether or not the ink residue on the pad of the IC chip is within the standard range.
When this inspection is completed, the wafer 22 is set in the horizontal state, and then returned to the original wafer cassette by the transfer arm, and the operation is completed.

As described above, according to this embodiment, since the wafer chuck 20 is rotatably provided, the test head can be first set on the side surface of the apparatus. Further, since the wafer chuck 20 is rotatably provided, processing such as probing, fine alignment, marking on a defective chip, and inspection can be collectively performed on one stage. As a result, it has a great advantage over the conventional probe device. This will be described below.

First, in the conventional apparatus, the wafer chuck 20
Since the wafer 22 was fixed so that it was parallel to the horizontal plane, the test head 10 necessarily had to be installed on the upper part of the apparatus. Therefore, when replacing the probe guard in the probe unit 16 or when inspecting the wafer 22 from above with a microscope or the like, the test head 10 is moved using a hinge. However, as the speed of the IC for probing measurement increases, the weight of the test head 10 increases, and in the future the test head 10 will be
It is expected that the weight will be about 500 kg, and in the conventional device mechanism, it is virtually impossible to move the test head by using the hinge. However, according to the present embodiment, by providing the wafer chuck 20 rotatably, the test head 10 does not necessarily have to be provided above the apparatus. Therefore, as shown in this embodiment, the test head 10 can be installed on the side surface or the lower surface (in the case of an inversion prober) of the apparatus, and it becomes possible to cope with the weight increase of the test head as described above, and the operability is improved. In terms of aspects, it will be greatly improved.

Further, in the conventional probe apparatus, a stage for fine alignment and inspection and a stage for marking defective chips are provided separately from the stage for probing processing. In this case, alignment area + probing area +
Y because the marking area etc. were arranged in a plane
The direction stroke was getting bigger. In particular, with the recent increase in the diameter of wafers, the tendency toward longer size has become stronger. By the way, in the probe device, the probe tip on the pad of the IC chip is within the standard range, for example, 8
It has become a major technical issue to keep it within μm. In particular, the number of input / output pads per chip has increased due to the high integration of ICs, but the chip area needs to be reduced.
It is becoming 0 μm square. As a result, a stricter standard value after the probing needle is being demanded, and it is a major technical issue to make the movement accuracy in the XY directions higher during probing. However, in the conventional probe device, since the length in the Y direction is physically large as described above, the movement accuracy is deteriorated, and the device for correcting this is complicated. This will be described below.

First, when the base 70 is lengthened in the Y direction, the rigidity of the base 70 in the Y direction becomes weak and the base 70 bends by its own weight, which deteriorates the movement accuracy in the Y direction. In particular, this device requires micrometer accuracy, so
This effect is great, and in order to prevent this, the base 70
Of the base 70
The increase in the weight of the product, the increase in the processing cost, etc., that is, the cost increase. Further, if the base 70 becomes large, the processing accuracy of the base 70 and the ball screw 44 also deteriorates. In particular, with the ball screw 44, backlash and feed accuracy errors accumulate as the ball screw length increases, which causes a larger cumulative error between both ends. The cumulative error generated in this way can be corrected,
The larger the error, the more complicated the apparatus for performing the correction in order to achieve the standard value described above. If the base 70 is further lengthened, it becomes necessary to correct not only such axial errors but also attitude errors such as yawing and pitching. In addition, the deformation due to thermal expansion becomes large, and heat countermeasures are required. As a result, the correction device becomes more complicated and complicated, and the cost and size of the device increase.

The lengthening of the base 70 affects not only the accuracy of the apparatus but also the throughput of the apparatus. That is, as the ball screw 44 becomes longer, the weight of the ball screw 44 increases and the moment of inertia of the ball screw 44 increases. Therefore, the Y table 40 during the propping operation
Will slow down, interrupt the high speed operation of the device, and reduce the processing throughput.

The problems of the conventional apparatus described above can be solved by this embodiment. That is, by rotatably providing the wafer chuck 20 as in the present embodiment, it is possible to efficiently perform processing such as propping, fine alignment, marking on a defective chip, and inspection. Therefore, it is possible to prevent the base 70 from being lengthened, which greatly improves the movement accuracy of the XY table. And with respect to the standard value after probing marking, which becomes more and more severe due to the high integration of LSI,
It is possible to deal with the correction device without making it complicated or complicated. Further, since the moment of inertia of the ball screw 44 can be reduced, the processing speed of the device can be increased, and the downsizing of the base 70 can also reduce the size of the device.

FIG. 6 is a schematic perspective view showing an example of a drive mechanism for each axis of the wafer chuck 20. In the figure, Y
The table 40 is formed in a substantially U-shape, and is supported on the base 70 so as to be movable in the Y direction. That is, the base 70 is provided with two guide shafts 46, 46 along the Y direction, and the two side surfaces 200, 200 of the Y table 40 are movable in the Y direction along the guide shaft 44. Also,
The bottom surface 202 of the Y table 40 has a motor 42 provided on the base 70 and a ball screw 44 driven by the motor 42.
Is driven along the Y direction.

The Y table 40 includes two Z-axis rods 2 extending in the Z direction along the upper surface 204 by the bottom surface 200 thereof.
06,206. This Z axis rod 206,206
Lifting blocks 210, 210 are respectively supported by the liftable lifters 210, 210. Then, by using one of the Z-axis rods 206 as, for example, a ball screw, the two lifting blocks 21
0 can be driven in the Z direction. Each elevating block 210 has swing tables 212, 212 on opposite surfaces.
The swing table 212 is swingable about the X axis, and the wafer 22 in the horizontal state shown by the solid line state in FIG.
Can be swung within a range of ± 90 °. A ball screw 34 and two Z-axis guides 36, 36 are arranged between the two rocking tables 212, 212 facing each other. An X table 30 is provided which is movable in the X direction by these shafts 34 and 36. Ball screw 3
The X table 30 is guided by the two X axis guides 36, 36 by a motor 32 (not shown in FIG. 6) provided at one end of 4 and driven in the X direction by being driven by the ball screw 34. It is possible. And this X table 30
A wafer chuck 20 is supported on the top.

Although not shown in FIG. 6, the X table 30 has a drive mechanism for rotationally driving the wafer chuck 20 in the θ direction, which is the circumferential direction of the wafer 22, and the Z table 22.
It has a Z ₁ mechanism that can be finely adjusted in the direction.

On the side of the Y table 40, an alignment unit 50 and a marking bridge 60 are juxtaposed in an upper region thereof, and a test head 10 is provided in a lower region thereof. Therefore, by setting the wafer 22 in the horizontal state below the CCD camera (not shown) of the alignment unit 50, it is possible to take an image for alignment of the wafer 22. Further, by setting the wafer 22 below the marking bridge 60 in a horizontal state, it is possible to mark a defective chip on the wafer 22 via the ink needle 63 of the inking marker 62. Further, with the wafer 22 standing vertically,
By moving closer to the probe card 16 side provided on the test head 10, the probe needles 18 provided on the probe card 16 can be brought into contact with the pads of each IC chip, and the electrical characteristics of the IC chip can be inspected. Can be implemented.

The present embodiment is not limited to the above embodiment, but various modifications can be made within the scope of the present invention.

For example, in the present invention, at least the orientation of the wafer for probing and the orientation for imaging the wafer for alignment may be set differently. At this time, the orientation of the wafer during probing should be vertical. However, the wafer prober can be used even if the wafer is set at an arbitrary angle. Therefore, the test head 10, alignment unit 50, and
The arrangement of the marking bridge 60 is also arbitrary, and various arrangements can be made if desired. Merkin Bridge 6
0 may be provided at a position facing the orientation of the wafer during probing or imaging, for example, and other marking methods such as a scratch marking method can be adopted. Further, for example, the object to be processed of the apparatus according to the present invention is the wafer 2
The number of processed objects is not limited to 2, and may be another processed object such as an LCD substrate that requires probing measurement.

[0045]

As described above, according to the present invention, the orientation of the surface to be processed of the object to be processed is set to different directions during probing and during image pickup for alignment. By matching or overlapping the two-dimensional scanning areas of the object to be measured at each time, it is possible to reduce the size and accuracy of the device and realize a probe device capable of high-speed measurement. Further, since the position of the test head closely arranged with the position of the probe card at the time of probing does not necessarily have to be the upper part of the apparatus main body, operability and safety are improved.

[Brief description of drawings]

FIG. 1 is a side view of a probe device according to an embodiment of the present invention.

FIG. 2 is a schematic perspective view with a part of the apparatus shown in FIG. 1 omitted.

FIG. 3 is a plan view of an object drive mechanism of the apparatus shown in FIG.

FIG. 4 is a schematic perspective view of a conventional probe device.

FIG. 5 is a plan view of a wafer drive mechanism of a conventional probe device.

FIG. 6 is a schematic perspective view showing a drive mechanism that drives the wafer chuck along each axis.

[Explanation of symbols]

 10 Test Head 18 Probe Needle 20 Wafer Chuck 22 Wafer 30 X Table 40 Y Table 50 Alignment Unit 52 CCD 60 Marking Unit 62 Inking Marker 64 Ink Needle 100 Device Main Unit

Claims (4)

[Claims] 1. A device for supporting a measured object and at least first and second measured surfaces of the measured object having different orientations.
A support table set in a second direction, a scanning unit for scanning the object to be measured set in the first and second directions on a two-dimensional plane, and the object to be measured set in the first direction. A probe card which is arranged at a position facing the body and has a large number of contact terminals for performing electrical probing measurement by contacting a device under test inside the device under test; and the probe card is set in the second direction. An image pickup unit arranged at a position facing the object to be measured and for adjusting the position of the object to be measured before the electrical probing measurement. 2. The device according to claim 1, wherein the first direction is a direction in which the measured surface of the measured object is a vertical surface, and a test head for vertically supporting the substrate of the probe card is the apparatus main body. A probe device arranged on the side surface. 3. The support according to claim 1, wherein the support sets the object to be measured in a third direction different from the first and second directions, and the object to be measured is set in the third direction. A probe apparatus further comprising marking means, which is arranged at a position facing a measuring body and marks a defective element determined to be defective as a result of an electrical probing inspection. 4. The position according to claim 3, wherein the support base makes the measured body substantially horizontal,
Rotating to a position rotated by approximately ± 90 degrees from this position, the loading and unloading of the measured object to the support base and the marking of defective elements are performed with the measured surface substantially horizontal, Performing the dynamic probing measurement at a position where the surface to be measured is rotated by approximately 90 degrees from the horizontal plane, and the image for position adjustment is performed at a position where the surface to be measured is rotated by approximately 90 degrees in the opposite direction from the horizontal plane. Characteristic probe device.