JPH0653126A - Electronic beam exposure device - Google Patents

Abstract

PURPOSE:To efficiently cut a block pattern out from pattern data at a high speed. CONSTITUTION:An electron beam exposing device is provided with an extracting means 1 which extracts a same part as a standard block pattern in order to expose the standard block pattern at an exposing position on a sample. The extracting means is provided with a comparing means 2, which uses a prescribed fixed point on the standard block as a reference point and compares the incident and emitting vectors with the incident and emitting vectors at the discretionary summit of a pattern data, a vector calculating means 3, which calculates a plurality of position vectors which indicate summits other than the reference point and a judging means 4, which permits the summit of an accorded pattern data to be a candidate point by the comparing result from the comparing means and judges whether the summit of the pattern data is at the point indicated by the position vector calculated by the vector calculating means using the candidate point as an origin. When the summit is present at the pattern data and the summit numbers are accorded, the pattern is extracted as the standard block.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus, and more specifically, it is suitable for use in the field of pattern exposure by a charged particle beam, and when performing wafer exposure using an electron beam using a transmission mask, The present invention relates to an electron beam exposure apparatus that extracts appropriate exposure pattern data. BACKGROUND OF THE INVENTION In recent years, for example, LSI (Large Scale In
high integration density, such as integrated circuits)
An electron beam exposure apparatus has been developed which performs so-called block exposure, which exposes a large-scale semiconductor integrated circuit wafer with predetermined pattern data by an electron beam or the like through a transmission mask.

In such an electron beam exposure apparatus, appropriate pattern data extraction processing is required for efficient exposure.

[0003]

2. Description of the Related Art As a conventional electron beam exposure apparatus of this type, for example, there is an X-ray exposure apparatus as shown in FIG. The X-ray exposure apparatus is roughly composed of an exposure unit 10 and a control unit 50.

The exposure unit 10 includes a charged particle beam source 14 having a cathode electrode 11, a grid electrode 12, and an anode 13, and a charged particle beam (hereinafter, simply referred to as a beam).
Slit 15 for shaping the beam into a rectangular shape, a first lens 16 for converging the shaped beam, and a slit for deflecting the position where the beam shaped according to the deflection signal S1 is irradiated onto the transmission mask 20. The deflector 17, the second lens 18 and the third lens 19 which are provided so as to face each other, the transmission mask 20 which is mounted between the second lens 18 and the third lens 19 so as to be movable in the horizontal direction, and the transmission mask 20. Are arranged in the up-and-down direction, and deflect the beam between the second lens 18 and the third lens 19 according to the position information P1 to P4, respectively, and select one of the plurality of transmission holes on the transmission mask 20. The fourth deflectors 21 to 24, a blanking 25 that blocks or passes a beam according to a blanking signal, a fourth lens 26, an aperture 27, and a refocusing coil 2 When, the fifth lens 29, a dynamic focus coil 30, a dynamic stigmatic coil 31, and the sixth lens 32, the exposure position determination signal S2,
A main differential coil 33 and a sub deflector 34 for beam positioning on the wafer W according to S3, a stage 35 on which the wafer W is mounted and movable in the XY directions, and first to fourth alignment coils 36 to 39. It has and.

Further, the control unit 50 should draw the storage medium 51 for storing the design data of the integrated circuit device, the CPU 52 for controlling the entire electron beam, and the drawing information and pattern, for example, fetched by the CPU 52. Wafer W
An interface 53 that transfers various information such as the above drawing position information and mask information of the transparent mask 20, a data memory 54 that holds the drawing pattern information and the mask information transferred from the interface 53, the drawing pattern information, and Based on the mask information, for example, one of the transmission holes of the transmission mask 20 is designated, and mask irradiation position data P1 indicating the position of the designated transmission hole on the transmission mask 20.
To P4, the wafer exposure position data S3 indicating the position on the wafer for exposing the pattern is generated, and the correction value H corresponding to the shape difference between the pattern shape to be drawn and the designated transmission hole shape is generated. A pattern generating unit 55 as a specifying unit, a holding unit, a calculating unit, and an output unit that perform various processes including a process of calculating, an amplifier unit 56 that generates a corrected deflection signal HS1 from a correction value H, and an amplifier unit 57.
And a mask moving mechanism 58 for moving the transparent mask 20 as necessary, and a system clock for receiving the exposure time / exposure waiting time from the pattern generation unit 55 and generating a system clock and a blanking clock for moving the entire exposure apparatus. A clock control circuit 59, a blanking control circuit 60 that receives the output of the clock control circuit 59 to generate blanking timing, an amplifier section 61 that generates a blanking control signal SB, and exposure start information transferred from the interface 53. , And main-deflection deflection information is output to the data memory 54 via the pattern generation unit 55 based on the exposure end information, and the stage control unit 68 is instructed to move to a desired stage position. Control the stage corrector 69 to correct the difference between the position and the main differential deflection. Based on the sequence controller 62 that controls the general sequence of the exposure process, such as instructing the clock generator 59 to generate / stop the clock in the pattern generator 55, and the main differential deflection information from the data memory 54. A deflection control circuit 63 for generating a main differential deflection signal S2, an amplifiers 64, 65 for generating exposure position determination signals S2, S3 based on outputs from the pattern generator 55 and the deflection control circuit 63, and if necessary. A stage moving mechanism 66 for moving the stage,
And a stage controller 68 including a laser interferometer 67 for detecting the stage position, and a stage for receiving a main differential deflection amount from the deflection control circuit 63 and a stage moving position from the stage controller 68 and correcting a difference from the main differential deflection. And a correction unit 68.

In the above structure, the electron beam emitted from the charged particle beam source 14 is supplied to the first slit 15
After being formed into a rectangular shape by, the light is converged by the first lens 16 and the second lens 18, and is irradiated onto the transmission mask 20. A relatively large area (about 5 mm) in the transparent mask 20.
Deflection is performed by the first to fourth deflectors 21 to 24, and the deflection within a relatively small range (within about 500 μm) after being selected by the first to fourth deflectors 21 to 24 is performed by the slit deflector. Done at 17.

By the way, in the case of variable rectangular exposure, the slit deflector 17 is used to shape into an arbitrary shape size (for example, an arbitrary rectangular size of 3 μm □ or less).
The electron beam passing through the transmission mask 20 passes through the blanking 25, is reduced by the fourth lens 26, and is deflected by the sub-deflector 34 in a small deflection area of about 100 μm.

Further, the sub-deflector deflection region is largely deflected by the main diff coil 33 in the exposure field of a range of about 2 mm. The data to be exposed is read from the storage medium 51 by the CPU 52 and stored in the data memory 54. When exposure is started by the sequence controller 62, first, the stored main diff deflection position is sent to the deflection control circuit 63, the deflection amount data S2 is output, and is output to the main diff coil 33 via the amplifier unit 57. .

After the output is stabilized, the sequence controller 62 instructs the clock control circuit 59 to generate the system clock, and as a result, the pattern data stored in the data memory 54 is sent to the pattern generating section 55. Shot data is created based on the pattern data that is output and read by the pattern generation unit 55.

The shot data includes position information P1 to P1 indicating a beam irradiation position on the mask, a correction value H indicating a deflection amount of the beam irradiation position on the mask, and a beam shaped by transmitting the beam through the mask. An exposure position determination signal S3 for deflecting to a desired position on the wafer W3, shot time data, and how long it takes to wait for the electrostatic deflector / electromagnetic deflector to settle when these signals are applied are shown. It includes shot waiting time data and the like.

After each of these signals is generated by the pattern generation section 55, the wafer W is generated by the pattern correction section.
The wafer rotation or the like that occurs when the stage is set on the stage 35 is corrected. The signals output to generate the shots are DAC (Digita).
It is input to the lto Analog Converter), converted into an analog signal, and applied to the electrode and the coil through the amplifier.

In the case of an electron beam exposure apparatus for a variable rectangle, the transmission mask 20 serves as a second slit, and the first to fourth deflectors 21 to 24 for deflecting on the transmission mask 20.
Is unnecessary. That is, in block exposure, high throughput is ensured by irradiating a block mask created in advance with an electron beam and transferring the block mask pattern onto the object to be exposed by the transmitted beam.

[0013]

However, in such a conventional electron beam exposure apparatus, for example, when a plurality of positions of a wafer are exposed using the same transmission hole, that is, the same pattern data. Includes the number of exposures and exposure start coordinates as exposure position information in the layout data in advance.
And the information such as the repetitive exposure pitch is given, and the same pattern is sequentially formed at a large number of positions on the wafer based on this arrangement data.
In addition, depending on how the pattern data is given, there is a problem in that the purpose of block exposure, which attempts to increase the processing speed by reducing the total number of shots, is obstructed.

This is because the pattern data is usually represented by the vertex coordinates and the vector, and it is not possible to know in which part of the pattern data the created block pattern exists and block exposure cannot be carried out. It is necessary to cut out a block from the pattern data and find at which position on the pattern data the block should be placed. When the semiconductor integrated circuit becomes large in scale, the number of exposure patterns is extremely large, for example, 64.
In MDRAM, the number of shots is as large as 4000 × 10 6, but this number of shots changes depending on how the pattern data is divided into blocks, and the total number of shots depends on whether pattern data with high repeatability can be effectively used. Is determined.

Conventionally, the block exposure was in the experimental stage, so that the work of cutting out the block pattern from the pattern data was performed manually, but in the mass production stage, the work of cutting out cannot be performed manually. is there. [Object] Therefore, an object of the present invention is to provide an electron beam exposure apparatus which efficiently and rapidly cuts a block pattern from pattern data.

[0016]

In order to achieve the above object, the electron beam exposure apparatus according to the present invention has a plurality of vertex coordinates and a vector between the vertex coordinates. An extraction unit that extracts the same portion as a preset block pattern having a predetermined shape from the pattern data, determines the shape of the transmission hole on the mask based on the predetermined block pattern of the predetermined shape, An electron beam exposure apparatus which exposes the fixed block pattern at an exposure position on a sample by a charged particle beam shaped by, wherein the extraction means uses a predetermined fixed point in the fixed block as a reference point, Comparing means for comparing an incident vector and an outgoing vector with an incident vector and an outgoing vector at an arbitrary vertex of the pattern data; Vector calculating means for calculating a plurality of position vectors representing respective vertices other than the reference point based on the reference point of the clock, and the comparison result of the comparing means to determine the vertices in the matched pattern data as candidates on the pattern data. And a determination means for determining whether or not a vertex of the pattern data exists at a point indicated by the position vector calculated by the vector calculation means with the candidate point as an origin, and the determination result of the determination means is used. , If the pattern data has vertices and the number of vertices matches, or if the pattern data has vertices, the incident vector and the outgoing vector at the vertices of the pattern data and the vertices of the pattern data are If the incident vector and the outgoing vector at the vertex in the corresponding fixed block match, the pattern data It is configured so as to extract as a standard-size block.

Further, in the invention according to claim 3, the judging means sequentially makes the incident vector and the outgoing vector coincide with all the points indicated by the position vector calculated by the vector calculating means with the candidate point as an origin. If there is a point where only the exit vector matches, after determining whether or not only the entrance vector matches, it is determined whether the exit vector at the point where only the entrance vector matches and the point where only the exit vector matches. Assuming that there is a vertex corresponding to each cut point that cuts the incident vector and
It is configured to give the information of each cutting point to the vertex that is the end point of the exit vector at the point where only the incident vector matches and the vertex that is the start point of the incident vector at the point where only the exit vector matches. ing.

In this case, according to the fourth aspect of the invention, when the pattern data obtained by cutting the exit vector at the point where only the incident vectors match and the entrance vector at the point where only the exit vectors match is cut out as a fixed block, If the remaining pattern data due to cutting cannot be cut out by another fixed block, connect each cutting point of the exit vector at the point where only the incident vector matches and the entrance vector at the point where only the exit vector matches. I am configuring.

[0019]

According to the present invention, the entrance and exit vectors of the reference point, which is the predetermined fixed point in the preset block pattern of the predetermined shape, are compared with the entrance and exit vectors at the arbitrary vertices of the pattern data to be compared. If they match, a plurality of position vectors representing other vertices other than the reference point are calculated based on the reference point.

Then, with the vertex of the matched pattern data as the origin, it is determined whether or not the vertex of the pattern data exists at the point indicated by this position vector. Based on this determination result, the vertex exists in the pattern data, and
If the number of vertices match, or there are vertices in the pattern data and the incident and exit vectors at the vertices of the pattern data match the incident and exit vectors at the vertices in the fixed block corresponding to the vertices of the pattern data. If so, the pattern data is cut out as a fixed block.

Further, in the case of the pattern data including the shape of the fixed block, the exit vector at the point where only the incident vector matches and the entrance vector at the point where only the exit vector matches are cut, and the cut points are cut. If the matching condition is satisfied, assuming that there is a vertex corresponding to
The pattern data is cut out as a fixed block.

As a result, the block pattern is efficiently and rapidly cut out from the pattern data.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. 1 to 10 show an embodiment of an electron beam exposure apparatus according to the present invention. First, the configuration will be described. Since the schematic configuration of the electron beam exposure apparatus in this embodiment is the same as that of the conventional example shown in FIG. 18, its description is omitted.

The electron beam exposure apparatus of this embodiment is shown in FIG.
Similar to the conventional example shown in (1), it comprises an exposure unit 10 and a control unit 50. In this embodiment, the extraction unit 1 is additionally provided to the control unit 50. FIG. 1 shows the main configuration of the extraction means of this embodiment. The extraction unit 1 is composed of a comparison unit 2, a vector calculation unit 3, a determination unit 4, and a cutout unit 5.

FIGS. 2A and 2B show a partial example of pattern data used in the following description and an example of a fixed block. As shown in FIG. 3, the comparison means 2 sets a predetermined fixed point in the fixed block as a reference point P, obtains an incident vector ip and an emission vector po of the reference point P, and FIG.
Among them, for example, the incident vector and the outgoing vector at each vertex of the pattern data A are compared.

As shown in FIG. 4, the vector calculating means 3 calculates the position vector of each vertex other than the reference point based on the reference point P of the fixed block. Judgment means 4
5 shows the position vector calculated by the vector calculating means 3 with the apex in the pattern data matched by the comparison result of the comparing means 2 as the candidate point Q on the pattern data and the candidate point Q as the origin, as shown in FIG. It is to determine whether or not the vertex of the pattern data exists at the point.

As shown in FIG. 6, the slicing means 5 determines whether the pattern data has a vertex and the number of vertices is the same, or the pattern data has a vertex, as shown in FIG. , And, if the incident vector and the outgoing vector at the apex of the pattern data and the incident vector and the outgoing vector at the apex in the fixed block corresponding to the apex of the pattern data match, cut out the pattern data as a fixed block, that is, The position and type of the block in the pattern data are stored.

Next, the operation will be described. Hereinafter, consider a case where the fixed block pattern shown in FIG. 2B is cut out from a part of the pattern data shown in FIG. First, as shown in FIG. 3, one point having a fixed block is designated as the reference point P.

By the way, at the time of this designation, the reference point P is a characteristic point in the fixed block, for example, the angle between the incident vector ip and the outgoing vector po is other than 90 °, or the incident vector. ip and emission vector p
A point where the ratio of the length to o is twice or more or three times or more is preferentially selected. This is because by making the matching conditions strict in the comparison means 2, unnecessary processing can be omitted as much as possible.

Next, the vertices on the pattern data having vectors that match the incident vector ip and the exit vector po of the reference point P designated in the above-described processing are searched, and as shown in FIG. If found, that point is set as the candidate point Q. When the candidate point Q is set, a plurality of position vectors representing each vertex other than the reference point are obtained with the reference point P of the standard block as the origin, as shown in FIG. 4, and as shown in FIG. This time, the same vector is taken with the candidate point Q on the pattern data as the origin.

In this case, as shown in FIG. 8, the vertex of the pattern data exists at the point indicated by the position vector with the candidate point Q as the origin, and the number of vertices of the fixed block and the number of vertices of the pattern data match. Alternatively, or as shown in FIG. 9, the vertex of the pattern data exists at the point indicated by the position vector with the candidate point Q as the origin, and the incident vector and the outgoing vector at the vertex of the pattern data are on the standard block. When the incident vector and the outgoing vector at the corresponding apex match, it is confirmed whether or not the fixed block can be cut out from the pattern data, and if the cutout is possible, the cutout is performed.

Here, as shown in FIG. 10, when it is determined that the cutout is impossible in the middle of the process, the candidate point Q is promptly discarded and a new candidate point Q is searched for. 11 to 17 show another embodiment of the electron beam exposure apparatus according to the present invention. In the block cutout according to the above-described embodiment, when pattern data is independent and a fixed block is cut out, it is possible to cut out only a pattern that can be cut out without cutting the pattern data in the middle of the pattern (hereinafter, referred to as an isolated pattern). Yes, when pattern data is continuous and a standard block is cut out, block cutting cannot be performed for patterns that cannot be cut out without cutting the pattern from the original pattern data (hereinafter referred to as continuous pattern). It was

In the present embodiment, efficient block cutout is performed for a continuous pattern. The operation will be described below. FIG. 11 is a diagram showing an example of pattern data and fixed blocks used in the description of the present embodiment.
P is a reference point in the fixed block, and Q is a candidate point in the pattern data.

FIG. 12 is a diagram showing the position vector of each vertex of the fixed block. Each vertex of the pattern data and the block pattern of the fixed block has an incident vector whose starting point is its immediately preceding vertex and its ending point, and an exit vector whose starting point is its starting point and whose ending point is its ending point. It has one piece of vector information, and the outline of the pattern data is given by these pieces of vector information.

When a fixed block as shown in FIG. 11 (b) is cut out from the pattern data as shown in FIG. 11 (a), first, a vector matching the incident vector and the outgoing vector at the reference point P designated in advance is set. The vertices (candidate points Q) on the pattern data are searched, and as shown in FIG. 12, the position vector indicating each vertex is obtained with the reference point P as the origin.

Next, as shown in FIG. 13, the position vector obtained by using the candidate point Q on the pattern data as the origin and the reference point P as the origin is made to correspond, and whether or not the apex of the pattern data exists at the point indicated by the position vector. Can be checked. In this case, the existence of the vertices is sequentially checked clockwise from the reference point P in the figure. Then, when a vertex exists in the block pattern, it is checked whether the incident vector and the exit vector at the vertex match the incident vector and the exit vector at the corresponding vertex in the fixed block.

Here, as shown in FIG. 14A, when the incident vectors match, but the exit vectors do not match, that is, when a vertex where only the incident vectors match is found, that on the block data is The vertex is defined as an incomplete coincidence point A, and as shown in FIG. 14B, when the incident vectors are not coincident but the emission vectors are coincident, that is, when the vertices in which only the emission vectors are coincident are found, The vertex on the block data is defined as the incomplete coincidence point B.

When an incomplete coincidence point A is found, FIG.
As shown in (a), the apex (residual point) Ra corresponding to the end point of the emission vector of the incomplete coincidence point A on the pattern data.
At the point where the output vector of the incompletely coincident point A is cut by the boundary line of the fixed block (hereinafter referred to as a cut point) Ca.
When the incomplete coincidence point B is found, the vertex corresponding to the start point of the incident vector of the incomplete coincidence point B on the pattern data (residual point), as shown in FIG. 15B. Information on the cutting point Cb is given to Rb. However,
When the incomplete matching point itself is the remaining point due to the other block cutout, the information of the cutting point is not added.

That is, when it is examined whether or not a vertex exists in the block pattern and the incident vector and the outgoing vector at the vertex match the incident vector and the outgoing vector at the corresponding vertex in the fixed block,
As shown in FIG. 16A, after the incomplete match point A is found, the coincidence determination between the incident vector and the exit vector is not performed for the vertex during the discovery of the incomplete match point B, and the cutting point When the coincidence determination is performed by regarding the vertices as the vertices and it is determined that the cutout can be performed by the above determination, the type of the fixed block and the exposure position information are separately stored as the block exposure data, as shown in FIG. 16B. To be done.

When it is determined that the block cut-out is possible as a result of matching determination by regarding the cutting point as a vertex, the corresponding vertex in the block data is deleted as shown in FIG. Cutting out is performed. If the block data after the cutout cannot be cut out with a fixed block of another type, the remaining points Ra and Rb
As shown in FIG. 17B, the cut portion is repaired based on the information of the connection point given to the exposure point, and the conventional variable rectangle exposure is performed as the portion where the block exposure is not possible.

As described above, in the present embodiment, the block pattern can be efficiently cut out from the pattern data, particularly for the data of the continuous pattern, and high throughput can be realized by the advantage of the block exposure in mass production. In the present embodiment, when it is desired to cut out several types of blocks when performing block cutout, priorities are set in the search order according to the frequency of use of each block, and efficient block search is performed, or immediately before cutting out. It is possible to further improve the processing throughput by giving the highest priority to the order of the next search for these blocks, or by performing both of them.

[0042]

According to the present invention, a block pattern can be cut out from pattern data efficiently and at high speed. Therefore, a block pattern can be cut out even in a large-scale actual IC pattern at the mass production stage, and high throughput production can be performed with the block exposure apparatus.

[Brief description of drawings]

FIG. 1 is a block diagram showing a main configuration of an electron beam exposure apparatus of the present invention.

FIG. 2 is a diagram showing an example of pattern data and a fixed block used in the description of the present embodiment.

FIG. 3 is a diagram for explaining designation of reference points.

FIG. 4 is a diagram showing position vectors of respective vertices of a fixed block.

FIG. 5 is a diagram for explaining designation of candidate points on pattern data.

FIG. 6 is a diagram showing cutout of pattern data.

FIG. 7 is a diagram showing a position vector from a candidate point on pattern data.

FIG. 8 is a diagram showing matching of vertices and the number of vertices.

FIG. 9 is a diagram showing matching of an incident vector and an outgoing vector.

FIG. 10 is a diagram showing an example in the case of disagreement.

FIG. 11 is a diagram showing an example of pattern data and a fixed block used for description of another embodiment.

FIG. 12 is a diagram showing position vectors of respective vertices of a fixed block.

FIG. 13 is a diagram showing position vectors of pattern data and fixed blocks.

FIG. 14 is a diagram for explaining incomplete matching points.

FIG. 15 is a diagram for explaining how to provide cutting point information with respect to a position vector of an incomplete coincidence point.

FIG. 16 is a diagram for explaining the cutout of block data.

FIG. 17 is a diagram for explaining the process after the block data is cut out.

FIG. 18 is a schematic diagram showing a configuration of a block exposure apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Extraction means 2 Comparison means 3 Vector calculation means 4 Judgment means 5 Cutting-out means 10 Exposure part 11 Cathode electrode 12 Grid electrode 13 Anode 14 Charged particle beam source 15 First slit 16 First lens 17 Slit deflector 18 Second lens 19th Three lenses 20 Transmission mask 21 First deflector 22 Second deflector 23 Third deflector 24 Fourth deflector 25 Blanking 26 Fourth lens 27 Aperture 28 Refocusing coil 29 Fifth lens 30 Dynamic focus coil 31 Dynamic stig coil 32 6th lens 33 Main differential coil 34 Sub deflector 35 Stage 36 1st alignment coil 37 2nd alignment coil 38 3rd alignment coil 39 4th alignment coil 50 Control part 51 Memory Medium 52 CPU 53 Interface 54 Data Memory 55 Pattern Generation Unit 56 Amplifier Unit 57 Amplifier Unit 58 Mask Moving Mechanism 59 Clock Control Circuit 60 Blanking Control Circuit 61 Amplifier Unit 62 Sequence Controller 63 Deflection Control Circuit 64 Amplifier Unit 65 Amplifier Unit 68 Stage Control Part 69 Stage correction unit

Claims (4)

[Claims] 1. A predetermined shape is provided with extraction means for extracting the same portion as a preset block pattern of a predetermined shape from a plurality of pattern data represented by vertex coordinates and a vector between the vertex coordinates. An electron beam exposure apparatus for determining the shape of a transmission hole on a mask based on a fixed block pattern of, and exposing the fixed block pattern to an exposure position on a sample by a charged particle beam shaped by the transmission hole, The extraction means uses a predetermined fixed point in the fixed block as a reference point, and compares the incident vector and the output vector at the reference point with the incident vector and the output vector at an arbitrary vertex of the pattern data; Vector calculating means for calculating a plurality of position vectors representing respective vertices other than the reference point based on the reference point of the block; According to the comparison result of the comparison means, the vertex in the matched pattern data is a candidate point on the pattern data, and the vertex is present at the point indicated by the position vector calculated by the vector calculation means with the candidate point as the origin. If there is a vertex in the pattern data and the number of vertices matches, the pattern data is cut out as a fixed block. And an electron beam exposure apparatus. 2. The comparison means, wherein the extraction means uses a predetermined fixed point in the fixed block as a reference point, and compares an incident vector and an emission vector at the reference point with an incident vector and an emission vector at an arbitrary vertex of the pattern data. Means, a vector calculation means for calculating a plurality of position vectors representing respective vertices other than the reference point based on the reference point of the fixed block, and the vertices in the matched pattern data by the comparison result of the comparison means. Determination means for determining whether or not a vertex of the pattern data is present at a point indicated by the position vector calculated by the vector calculation means with the candidate point on the data as an origin, According to the determination result of the means, a vertex exists in the pattern data, and an incident vector and an incident vector at the vertex of the pattern data are present. 2. The electronic device according to claim 1, wherein if the emission vector and the incident vector and the emission vector at the apex of the fixed block corresponding to the apex of the pattern data match, the pattern data is cut out as a fixed block. Beam exposure device. 3. The determining means sequentially determines whether or not the incident vector and the outgoing vector coincide with each other for all points indicated by the position vector calculated by the vector calculating means with the candidate point as an origin, and the incident vector If there is a point where only the exit vector matches after finding a point where only the exit vector matches, the exit vector at the point where only the entrance vector matches and the entrance vector at the point where only the exit vector matches are cut off. There is a vertex corresponding to each cutting point, the vertex which is the end point of the exit vector of the point where only the incident vector matches, and the vertex which is the start point of the incident vector of the point where only the exit vector matches. 3. The electron beam exposure apparatus according to claim 1, wherein the information of each cutting point is given. 4. When the pattern data obtained by cutting the exit vector at the point where only the incident vector matches and the entrance vector at the point where only the exit vector matches are cut out as a fixed block, the remaining pattern data due to the cutting is the other pattern data. 4. The electronic device according to claim 3, wherein, when the cut-out cannot be performed by the fixed block, the respective cut points of the exit vector at the point where only the incident vector matches and the entrance vector at the point where only the exit vector matches are connected. Beam exposure device.